CN109616571A - A kind of preparation method of collagen memristor - Google Patents
A kind of preparation method of collagen memristor Download PDFInfo
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- CN109616571A CN109616571A CN201811343481.0A CN201811343481A CN109616571A CN 109616571 A CN109616571 A CN 109616571A CN 201811343481 A CN201811343481 A CN 201811343481A CN 109616571 A CN109616571 A CN 109616571A
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- 102000008186 Collagen Human genes 0.000 title claims abstract description 56
- 108010035532 Collagen Proteins 0.000 title claims abstract description 56
- 229920001436 collagen Polymers 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 25
- 238000001035 drying Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000084 colloidal system Substances 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 6
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 claims abstract description 6
- 229910001488 sodium perchlorate Inorganic materials 0.000 claims abstract description 6
- 238000004090 dissolution Methods 0.000 claims abstract description 5
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 5
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000000502 dialysis Methods 0.000 claims description 6
- 239000012153 distilled water Substances 0.000 claims description 6
- 239000006166 lysate Substances 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 239000006228 supernatant Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000005119 centrifugation Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- QCVGEOXPDFCNHA-UHFFFAOYSA-N 5,5-dimethyl-2,4-dioxo-1,3-oxazolidine-3-carboxamide Chemical compound CC1(C)OC(=O)N(C(N)=O)C1=O QCVGEOXPDFCNHA-UHFFFAOYSA-N 0.000 claims description 2
- 102000002322 Egg Proteins Human genes 0.000 claims description 2
- 108010000912 Egg Proteins Proteins 0.000 claims description 2
- 235000014103 egg white Nutrition 0.000 claims description 2
- 210000000969 egg white Anatomy 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000015654 memory Effects 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 102000004169 proteins and genes Human genes 0.000 description 5
- 108090000623 proteins and genes Proteins 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000283074 Equus asinus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Peptides Or Proteins (AREA)
Abstract
The invention discloses a kind of preparation methods of collagen memristor, comprising the following steps: S1, prepares self-control collagen protein powder；S2, collagen protein powder is added in sodium perchlorate electrolyte solution (NC-009), collagen colloid is prepared into after dissolution；S3, using tin indium oxide transparent conductive glass as substrate, collagen colloid is spin-coated on substrate as dielectric layer；S4, the substrate with dielectric layer for preparing step S3 are placed in 35-40 DEG C of drying box and are dried, and drying time is 12-15 hours；S5, top electrode is deposited on the surface of dielectric layer by vacuum deposition method, so that obtaining structure is top electrode/collagen/tin indium oxide memristor.The preparation method can be realized the secondary use of leftover pieces, the environmentally friendly and saving energy has preferable room temperature memristor characteristic using the memory resistor that this method is prepared into, can be used in the archetype for preparing memristor memory, the switch performance of higher rate can be achieved, and manufacturing cost is low.
Description
Technical field
The invention belongs to memory manufacturing technology fields, and in particular to a kind of preparation method of collagen memristor.
Background technique
As being increasingly miniaturized for electronic product is continuously improved with electronic component integration degree, information storage is proposed higher
Requirement.For traditional memory, especially a large amount of used flash memories of electronic product are in miniaturization and high collection
Bottleneck is encountered in the process of Cheng Du.Memristor is a kind of novel memory devices to grow up in recent decades, it passes through resistance
The storage of information is realized in transition with restoring, and not only small power consumption, storage density are high, but also is had preparation process simply and extended
Property is good.By the discovery of new material, the design of device architecture and with other electronic devices (nano generator, field effect transistor,
Oscillator etc.) combination, the research of memristor obtains important breakthrough and progress.Therefore, memristor is considered as replacing flash memory
Device most has prospect memory.
The workload of one memristor is equivalent to the effectiveness that more than ten of transistor generates jointly in one piece of cpu chip.Hewlett-Packard
Discovery about memristor was published in " nature " periodical at 2008, and the system for demonstrating CrossLatch is easy within 2009
Energy storehouse, forms three-dimensional memory." switch " between each electric wire of technology is about 3nm x 3nm big, switching when
Between be less than 0.1ns, whole running speed is similar with DRAM, but on-off times are also not enough to replace not as good as DRAM
DRAM, but it is located against 1cm2 100gigabit (GB), 1cm3 1petabit (data storage unit 1PB=1000TB) (may be used also
Storehouse) surprising latent capacity, far beyond flash memory have potentiality.Future semiconductor industry is possible to from " silicon epoch " entrance " when carbon
In generation ", and this nonlinear resistance for remembering electric current of memristor, rely on its superior characteristic, will become following extremely promising
Memory element.
Memristor random access memory has the advantages that storage density is high, and read or write speed is fast, and structure is relatively easy.In addition, memristor
Very well, high-volume easy to accomplish can integrate, low cost the compatibility of the manufacture craft of random access memory and traditional CMOS technology
The manufacturing.In numerous memristor functional layer materials, not only there is transition group metallic oxide, there are also natural for doped semiconductor
Organic matter and synthesis of organic substance.Metal oxide and semiconductor are not only at high cost, and acquiring way is few, and utilization rate is low, and wherein
Some has more or less injury to environment and human body.In recent years, many scientific research personnel attempted with degradable and nothing
Functional layer of the natural biologic material of poison as memristor, such as egg white, silk and leaf etc..
Summary of the invention
Present invention aim to address the above problems, provide a kind of system+Preparation Method of collagen memristor, this method pair
It is environmental-friendly, it is possible to prevente effectively from negative effect of the semiconductor material to environment and human body in traditional technology.
In order to solve the above technical problems, the technical scheme is that a kind of preparation method of collagen memristor, packet
Include following steps:
S1, quantitative pigskin is collected, is dried after being cleaned pigskin using clear water, reduction method is recycled to obtain glue
Former protein powder, the particle size of collagen protein powder are 2 μm~2.5 μm；
S2, collagen protein powder is added in sodium perchlorate electrolyte solution (NC-009), collagen protein powder is molten with electrolyte
Quality proportioning range 3:1~4:1 of liquid, collagen powder are prepared into collagen glue after dissolving in sodium perchlorate solution
Body；
S3, collagen colloid is spin-coated on conductive substrate as dielectric layer；
S4, the substrate with dielectric layer for preparing step S3 are placed in 35-40 DEG C of drying box and are dried, and do
The dry time is 12-15 hours；
S5, top electrode is deposited on the surface of dielectric layer by vacuum deposition method, so that obtaining structure is top electrode/collagen egg
The memristor of white/conductive substrate.
In above-mentioned technical proposal, in the step S1, the particle size of collagen protein powder is preferably 2 μm~2.5 μm.Collagen
If protein powder partial size is too big, such as reach tens microns, can be uneven when colloid spin coating is made, influence quality of forming film.Partial size
The film effect that size is prepared at 1 μm -4 μm is preferable.
In above-mentioned technical proposal, detailed process is as follows for the reduction method:
Pigskin after drying is dissolved into NaOH, Na2SO3In the mixed aqueous solution of SDS, pigskin and distilled water mass ratio
For 1:15, three kinds of solution that distilled water is added, NaOH solution, Na2SO3The mass concentration of solution and SDS solution is respectively
10g/L, 50g/L, 15g/L, proportion are 1:5:1.5；
Mixed solution after dissolution pigskin is filtered operation, obtains pigskin lysate；
Pigskin lysate is centrifuged, parameter of noncentricity are as follows: 8000 turns/min~10000 turn/min, continue 15~
10min, the supernatant after taking centrifugation are dialysed, dialysis parameters are as follows: 48-72h, 8000KD~14000KD.Further preferably from
Heart parameter are as follows: 10000 turns/min, 10min.It is dry to constant weight, drying temperature 50 that supernatant after dialysis is put into drying box
DEG C, the collagen crystal obtained after drying is ground into collagen powder, it is spare.
In above-mentioned technical proposal, the conductive substrate is tin indium oxide transparent conductive glass, metallic conduction thin slice or conduction
Film.It is described to power on extremely silver or conductive oxide.It should be noted that conductive substrate is not limited to tin indium oxide in the present invention
(ITO) transparent conducting glass, other sheet metals or conductive film can also be used for the present invention；Top electrode is preferably but not limited to silver,
Other metals such as gold, aluminium, copper or conductive oxide can be used in the present invention.
It is in place of main innovation of the invention: in biological memristor field, for the first time using collagen as functional layer
It observes memristor effect, and better performances, sufficiently proves that this material can build memory resistor, can be based on later should
Material does more scientific researches, and the memristor based on collagen possesses more possibility.
The beneficial effects of the present invention are: the preparation method of collagen memristor provided by the invention, can be realized corner
There is preferable room temperature to recall for the secondary use of material, environmentally friendly and the saving energy, the memory resistor being prepared into using this method
Hinder characteristic, can be used in the archetype for preparing memristor memory, it can be achieved that higher rate switch performance, and manufacturing cost
It is low.
Detailed description of the invention
Fig. 1 is the flow diagram of collagen memristor preparation method in the embodiment of the present invention；
Fig. 2 is the memristor performance characterization figure of the memristor prepared in embodiment；
Fig. 3 is another phenogram of memristor performance of the memristor prepared in embodiment；
Fig. 4 is the storge quality phenogram of the memory resistor prepared in embodiment；
Fig. 5 is another phenogram of storge quality of the memory resistor prepared in embodiment.
Specific embodiment
The present invention is described further in the following with reference to the drawings and specific embodiments:
In the present embodiment, using self-control collagen protein powder.It should be noted that other commercially available collagen protein powders can also answer
For in the present invention.In addition, the raw material of production collagen protein powder is not limited to pigskin, it can also be used and routinely use in this field
Other are used to prepare the raw material of collagen protein powder, such as donkey hide.Preparation cost can effectively reduce using pigskin, and in the present embodiment
Reduction method can prepare the collagen powder of ultra-fine (particle size range is preferably 2 μm -2.5 μm).
As shown in Figure 1, collagen memristor preparation method of the invention, comprising the following steps:
S1, self-control collagen protein powder, it is specific the preparation method is as follows:
The pigskin for collecting set amount is dried after being cleaned pigskin using clear water, and the pigskin after drying is dissolved
To NaOH, Na2SO3In the mixed aqueous solution of SDS, pigskin and distilled water mass ratio are 1:15, three kinds that distilled water is added
Solution, NaOH solution, Na2SO3The mass concentration of solution and SDS solution is respectively 10g/L, 50g/L, 15g/L, and proportion is 1:
5:1.5；
Mixed solution after dissolution pigskin is filtered operation, obtains pigskin lysate；
Pigskin lysate is centrifuged, parameter of noncentricity are as follows: 8000 turns/min~10000 turn/min, continue 15~
10min, the supernatant after taking centrifugation are dialysed, dialysis parameters are as follows: 48~72h, 8000KD~14000KD, after dialysis
Supernatant is put into drying box drying to constant weight, and drying temperature is 50 DEG C, and the collagen crystal obtained after drying is ground plastic
Former protein powder, it is spare；
S2, the collagen powder for preparing step S1 are added in sodium perchlorate electrolyte solution (NC-009), quality
Ratio range 3:1~4:1, collagen powder are prepared into collagen colloid after dissolving in sodium perchlorate solution；
S3, using tin indium oxide transparent conductive glass as conductive substrate, using collagen colloid as middle layer, spin coating
Dielectric layer is used as on the indium tin oxide films of substrate；
S4, the substrate with dielectric layer for preparing step S3 are placed in 35~40 DEG C of drying box and are dried,
Drying time is 12~15 hours；
S5, the surface deposited metal silver by vacuum deposition method in dielectric layer do top electrode, so that obtaining structure is to power on
Pole/collagen/tin indium oxide memristor.
It as shown in Figures 2 and 3, is the performance characterization figure of prepared memory resistor, in memristor performance test, ITO is conductive
Glass is directly as lower electrode, with area about 8mm2The silver of shape is surveyed as top electrode using electrochemical workstation as Current Voltage
Dual-meter is tried, test circuit is constituted and carries out memristor performance test, result is as follows:
Fig. 2 is to test circuit in electric current-voltage (I-V) figure that voltage scan range is -5V to 5V, and Fig. 3 is that it is corresponding
The I-V diagram characterized using logarithmic coordinates, Cong Tuzhong is this it appears that prepared memory resistor has good memristor effect.
As shown in Figure 4 and Figure 5, it is characterized for the storge quality of the memory resistor of preparation.Fig. 4 is the high low-resistance of memory resistor
State-cycle-index figure, as seen from Figure 4, the height resistance ratios of the memory resistor are about 102-115, and its high resistant
State is gradually stable with increasing for cycle-index.Fig. 5 is the high-resistance resistors (RHRS) and low resistance state resistance of the memory resistor
(RLRS) high low resistance state-time diagram under -1.3V bias respectively, as seen from Figure 5, after switch 1000 seconds, high resistant
There are also increased trend for state.
By above-mentioned experiment it can be proved that the glue of ultra-fine (particle size range is 2 μm~2.5 μm) that the present embodiment is prepared
Former protein powder has good memristor storage effect, which can be realized preferable room temperature memristor storage characteristics.
Generally speaking, in the present invention, inventor is come using the collagen that low price and readily available pigskin extract
Memristor is prepared, content of the collagen in Pigskin Protein matter is up to 85%-87.8%, and the pigskin in China is applied to skin more
Leather production, therefore, extracting the collagen in pigskin can be improved the utility value of pigskin.Memristor is prepared using pigskin, no
But the secondary use of leftover pieces is realized, and the collagen in pigskin has other macromolecules as natural macromolecular material
Therefore the unrivaled biocompatibility of material and biological degradability prepare memristor using pigskin, have very much in the long run
Application value and meaning.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this hair
Bright principle, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.This field
Those of ordinary skill disclosed the technical disclosures can make according to the present invention and various not depart from the other each of essence of the invention
The specific variations and combinations of kind, these variations and combinations are still within the scope of the present invention.
Claims (4)
1. a kind of preparation method of collagen memristor, it is characterised in that: the following steps are included:
S1, quantitative pigskin is collected, is dried after being cleaned pigskin using clear water, reduction method is recycled to obtain collagen egg
White powder end, the particle size of collagen protein powder are 2 μm~2.5 μm；
S2, collagen protein powder is added in sodium perchlorate electrolyte solution, collagen colloid, collagen is prepared into after dissolution
Quality proportioning range 3:1~4:1 of powder and electrolyte solution；
S3, collagen colloid is spin-coated on conductive substrate as dielectric layer；
S4, the substrate with dielectric layer for preparing step S3 are placed in 35-40 DEG C of drying box and are dried, when dry
Between be 12-15 hours；
S5, by vacuum deposition method dielectric layer surface deposit top electrode, thus obtain structure be top electrode/collagen/
The memristor of conductive substrate.
2. the preparation method of collagen memristor according to claim 1, it is characterised in that: the specific mistake of reduction method
Journey is as follows:
Pigskin after drying is dissolved into NaOH, Na2SO3In the mixed aqueous solution of SDS, pigskin and distilled water mass ratio are 1:
15, three kinds of solution that distilled water is added, NaOH solution, Na2SO3The mass concentration of solution and SDS solution be respectively 10g/L,
50g/L, 15g/L, proportion are 1:5:1.5；
Mixed solution after dissolution pigskin is filtered operation, obtains pigskin lysate；
Pigskin lysate is centrifuged, parameter of noncentricity are as follows: 8000 turns/min~10000 turn/min, continue 15~10min, take
Supernatant after centrifugation is dialysed, dialysis parameters are as follows: 48~72h, 8000KD~14000KD put the supernatant after dialysis
It is dry to constant weight to enter drying box, drying temperature is 50 DEG C, and the collagen crystal obtained after drying is ground into collagen protein powder
End, it is spare.
3. the preparation method of collagen memristor according to claim 1, it is characterised in that: the conductive substrate is oxygen
Change one of indium tin transparent conducting glass, metallic conduction thin slice or conductive film.
4. the preparation method of collagen memristor according to claim 1, it is characterised in that: it is described power on extremely silver or
Conductive oxide.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323333A (en) * | 2019-07-09 | 2019-10-11 | 广州大学 | A kind of memristor and preparation method thereof based on natural organic |
| CN110718631A (en) * | 2019-10-12 | 2020-01-21 | 西南交通大学 | Preparation method of low-energy-consumption and high-reliability biological memristor |
| CN112635663A (en) * | 2019-10-09 | 2021-04-09 | 黑龙江大学 | Resistive random access memory based on soy protein and preparation method and application thereof |
| CN114808081A (en) * | 2022-01-27 | 2022-07-29 | 华东理工大学 | Short-distance oriented amorphous collagen material capable of being stripped from electrode and electrochemical preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630662A (en) * | 2009-08-20 | 2010-01-20 | 黑龙江大学 | Manufacturing method for protein structure quick switch memristor array |
| CN105633112A (en) * | 2015-12-30 | 2016-06-01 | 西安电子科技大学 | Super-light resistive random access memory and preparation method thereof |
| CN107425119A (en) * | 2017-08-11 | 2017-12-01 | 河北大学 | A kind of resistive neurobionics device with organic-biological compatibility and its preparation method and application |
| CN107681047A (en) * | 2017-08-11 | 2018-02-09 | 河北大学 | A kind of organic degradable resistive neurobionics device and its preparation method and application |
-
2018
- 2018-11-13 CN CN201811343481.0A patent/CN109616571A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630662A (en) * | 2009-08-20 | 2010-01-20 | 黑龙江大学 | Manufacturing method for protein structure quick switch memristor array |
| CN105633112A (en) * | 2015-12-30 | 2016-06-01 | 西安电子科技大学 | Super-light resistive random access memory and preparation method thereof |
| CN107425119A (en) * | 2017-08-11 | 2017-12-01 | 河北大学 | A kind of resistive neurobionics device with organic-biological compatibility and its preparation method and application |
| CN107681047A (en) * | 2017-08-11 | 2018-02-09 | 河北大学 | A kind of organic degradable resistive neurobionics device and its preparation method and application |
Non-Patent Citations (1)
| Title |
|---|
| NILOUFAR RAEIS-HOSSEINI等: "Flexible Artificial Synaptic Devices Based on Collagen from from", 《ADV. FUNCT. MATER.》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323333A (en) * | 2019-07-09 | 2019-10-11 | 广州大学 | A kind of memristor and preparation method thereof based on natural organic |
| CN112635663A (en) * | 2019-10-09 | 2021-04-09 | 黑龙江大学 | Resistive random access memory based on soy protein and preparation method and application thereof |
| CN112635663B (en) * | 2019-10-09 | 2022-08-30 | 黑龙江大学 | Resistive random access memory based on soy protein and preparation method and application thereof |
| CN110718631A (en) * | 2019-10-12 | 2020-01-21 | 西南交通大学 | Preparation method of low-energy-consumption and high-reliability biological memristor |
| CN114808081A (en) * | 2022-01-27 | 2022-07-29 | 华东理工大学 | Short-distance oriented amorphous collagen material capable of being stripped from electrode and electrochemical preparation method thereof |
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