CN110718591A - AlGaN/GaN Schottky barrier diode based on groove-type guard ring structure and manufacturing method - Google Patents

AlGaN/GaN Schottky barrier diode based on groove-type guard ring structure and manufacturing method Download PDF

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CN110718591A
CN110718591A CN201911097995.7A CN201911097995A CN110718591A CN 110718591 A CN110718591 A CN 110718591A CN 201911097995 A CN201911097995 A CN 201911097995A CN 110718591 A CN110718591 A CN 110718591A
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flow rate
barrier layer
algan
thickness
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张进成
宋秀峰
赵胜雷
朱丹
张苇杭
张雅超
刘爽
刘俊伟
李仲扬
郝跃
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Xian University of Electronic Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66212—Schottky diodes

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Abstract

The invention discloses an AlGaN/GaN Schottky barrier diode device based on a groove-type guard ring structure and a manufacturing method thereof, and mainly solves the problems of low breakdown voltage and poor reliability in the prior art. The solar cell comprises a substrate (1), a nucleating layer (2), a buffer layer (3), an insertion layer (4) and a barrier layer (5) from bottom to top, wherein an anode (7) and a cathode (8) are arranged above the barrier layer (5), grooves with the depth of 10-15 nm and the width of 1-3 mu m are carved below the anode in the barrier layer (5) to form groove-shaped guard rings (6), and a passivation layer (9) is arranged between the anode and the cathode. The invention reduces the peak value of the edge electric field below the anode and improves the breakdown voltage because the groove-shaped protective ring is arranged in the barrier layer, has simple process, high yield and good reliability, and can be used as a basic device for a high-power system and a switch.

Description

AlGaN/GaN Schottky barrier diode based on groove-type guard ring structure and manufacturing method
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to an AlGaN/GaN Schottky barrier diode which can be used as a basic device for a high-power system and a switch.
Background
The power semiconductor device is a core element of power electronic technology, and with the increasingly prominent energy and environmental problems, the development of a novel high-performance and low-loss power device becomes one of effective ways for improving the utilization rate of electric energy, saving energy and relieving the energy crisis. In the research of power devices, a severe restriction relationship exists between high speed, high voltage and low on-resistance, and the key for improving the overall performance of the device is to reasonably and effectively improve the restriction relationship. With the development of microelectronic technology, the performance of the traditional first-generation Si semiconductor and second-generation GaAs semiconductor power devices is close to the theoretical limit determined by the materials. In order to further reduce the chip area, improve the working frequency, improve the working temperature, reduce the on-resistance, improve the breakdown voltage, reduce the volume of the whole machine and improve the efficiency of the whole machine, the wide-bandgap semiconductor material represented by GaN is distinguished in the aspect of preparing a high-performance power device by virtue of the larger bandgap, the higher critical breakdown electric field and the higher electronic saturation drift speed, and the excellent physical and chemical properties such as stable chemical performance, high temperature resistance, radiation resistance and the like, and has great application potential. Among them, the GaN-based schottky barrier diode is an important GaN-based device, which is a majority carrier semiconductor device, and the minority carrier charge storage effect is weak. GaN can be used not only for making GaN schottky barrier diode by using bulk material, but also for making high performance device, i.e. heterojunction AlGaN/GaN schottky barrier diode, by using its heterostructure, as shown in fig. 1, it includes a substrate, a nucleation layer, a buffer layer, an insertion layer, a barrier layer from bottom to top, an anode and a cathode are arranged above the barrier layer, and a passivation layer is arranged between the anode and the cathode. The AlGaN/GaN transverse heterojunction Schottky barrier diode has the excellent characteristics of high breakdown voltage, low on-resistance, short reverse recovery time and the like, is easy to realize large current density and power density, and can greatly improve the electric energy conversion efficiency of a system and reduce the preparation cost when being applied to power conversion. However, when the heterojunction AlGaN/GaN schottky diode is reversely biased, the electric field below the anode is not uniformly distributed in the horizontal direction, that is, the closer to the edge of the electrode, the denser the electric field lines are distributed, so that the maximum value of the electric field appears at the edge below the anode, which easily causes avalanche breakdown at the edge, causes the actual breakdown voltage and output power of the AlGaN/GaN schottky diode to be reduced, increases the reverse leakage current, and reduces the reliability of the device.
Disclosure of Invention
The invention aims to provide an AlGaN/GaN Schottky barrier diode based on a groove-type guard ring structure and a manufacturing method thereof aiming at overcoming the defects of the prior art, so that the peak value of a fringe electric field below an anode and reverse leakage current under a high field are reduced, the breakdown characteristic and reliability of the device are improved, and high output power is realized.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
1. an AlGaN/GaN Schottky barrier diode based on a groove-shaped guard ring structure comprises a substrate, a nucleating layer, a buffer layer, an insertion layer and a barrier layer from bottom to top, wherein an anode and a cathode are arranged above the barrier layer, and a passivation layer is arranged between the anode and the cathode.
Further, the substrate is made of sapphire, Si, SiC or GaN bulk material.
Further, the nucleation layer is made of AlN and has the thickness of 30-100 nm; the buffer layer adopts gaN, and thickness is 1 ~ 6 um.
Further, the inserting layer is made of AlN and has the thickness of 0.5-2 nm; the barrier layer is made of AlGaN and has the thickness of 15-30 nm; the passivation layer is made of SiN or SiO2Or Al2O3Or HfO2And the like.
2. A manufacturing method of an AlGaN/GaN Schottky barrier diode based on a groove-type guard ring structure is characterized by comprising the following steps:
1) pretreating the surface of the substrate for eliminating dangling bonds, and placing the pretreated substrate in H2Carrying out heat treatment in the reaction chamber at 950 ℃ and carrying out epitaxial growth of an AlN nucleating layer with the thickness of 30-90 nm on the substrate by adopting an MOCVD (metal organic chemical vapor deposition) process;
2) depositing an intrinsic GaN buffer layer with the thickness of 0.5-5 mu m on the AlN nucleating layer by adopting an MOCVD (metal organic chemical vapor deposition) process;
3) depositing an AlN insert layer with the thickness of 0.5-2 nm on the GaN buffer layer by adopting an MOCVD process;
4) depositing an AlGaN barrier layer with the thickness of 15-30 nm on the AlN insert layer by adopting an MOCVD (metal organic chemical vapor deposition) process;
5) manufacturing a mask on the AlGaN barrier layer, depositing cathode metal above the barrier layer by adopting a magnetron sputtering process, annealing at the high temperature of 830 ℃, and depositing anode metal on the other side above the barrier layer by adopting the magnetron sputtering process, wherein the cathode metal adopts Ti/Al or Ti/Al/Ni/Au or Ti/Al/Mo/Au, and the anode metal adopts Ni/Au/Ni or Ni/Au or W/Au or Mo/Au;
6) mask is made again on AlGaN barrier layer, and RIE process is adopted to use Cl2And BCl3Etching the open hole region by two gases to form a groove-shaped protection ring with the depth of 10-15 nm and the width of 1-3 mu m, wherein Cl2The amount of flow of (3) was 10sccm, BCl3The flow rate of (2) is 20 sccm;
7) placing the epitaxial wafer subjected to the steps into a Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction chamber for carrying out passivation layer deposition;
8) and photoetching and etching the passivation layers on the anode and the cathode to form an anode contact hole and a cathode contact hole, thereby finishing the manufacture of the whole device.
The device of the invention has the following advantages compared with the prior art because the groove-shaped guard ring is arranged below the anode in the barrier layer:
1. the peak value of the fringe electric field below the anode is reduced, the breakdown voltage is increased, and high output power is realized;
2. reverse electric leakage under a high field is reduced, and reliability is improved;
3. the process is simple and the finished product rate is high.
Drawings
Fig. 1 is a structural view of a conventional AlGaN/GaN schottky barrier diode.
Fig. 2 is a structural diagram of an AlGaN/GaN schottky barrier diode based on a recessed guard ring structure according to the present invention.
Fig. 3 is a flow chart illustrating the fabrication of the device of fig. 2 according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and examples.
Referring to fig. 2, the AlGaN/GaN schottky barrier diode device with a groove-type guard ring according to the present invention sequentially includes, from bottom to top: substrate 1, nucleation layer 2, buffer layer 3, inserted layer 4 and barrier layer 5, the both sides above the barrier layer 5 are positive pole 7 and negative pole 8, be passivation layer 9 between positive pole 7 and the negative pole 8, it is 10 ~ 15nm to be carved with the recess that the degree of depth is 10 ~ 15nm, width is 1 ~ 3 mu m to lie in the below of positive pole in the barrier layer 5, forms fluted guard ring 6 to reduce the marginal electric field peak value below the positive pole, improved breakdown voltage, wherein:
the substrate 1 is made of sapphire, Si, SiC or GaN bulk material; the nucleation layer 2 adopts AlN with the thickness of 30-100 nm; the buffer layer 3 is made of GaN with the thickness of 1-6 mu m; the insert layer 4 is 0.5 to E thick2nm of AlN; the barrier layer 5 adopts AlGaN with the thickness of 15-30 nm, the depth of the groove-shaped guard ring 6 is 10-15 nm, and the width is 1-3 mu m; the passivation layer 9 is made of SiN or SiO2Or Al2O3Or HfO2A medium; the cathode metal adopts the metal layer combination of Ti/Al or Ti/Al/Ni/Au or Ti/Al/Mo/Au; the anode metal adopts the combination of metal layers of Ni/Au/Ni or Ni/Au or W/Au or Mo/Au.
Referring to fig. 3, the present invention manufactures AlGaN/GaN schottky barrier diodes based on a groove-type guard ring structure, and three examples are given as follows:
in example 1, an AlGaN/GaN schottky barrier diode was fabricated using sapphire as a substrate, and having a trench-type guard ring depth of 10nm and a width of 1 μm.
Step 1, preprocessing for eliminating dangling bonds is carried out on the surface of the sapphire substrate.
1.1) putting the sapphire substrate into HF acid solution for soaking for 30s, and then sequentially putting the sapphire substrate into acetone solution, absolute ethyl alcohol solution and deionized water for ultrasonic cleaning for 2min respectively;
1.2) drying the cleaned sapphire substrate by using nitrogen.
And 2, extending the AlN nucleating layer.
And putting the pretreated sapphire substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) system, and introducing an Al source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm into a reaction chamber at the same time under the conditions that the chamber pressure is 10Torr and the temperature is 900 ℃ to grow an AlN nucleating layer with the thickness of 30 nm.
And 3, manufacturing a buffer layer.
Ga source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm are simultaneously introduced into the reaction chamber, and a GaN buffer layer with the thickness of 1 mu m is grown on the AlN nucleating layer.
And 4, manufacturing an insertion layer.
An Al source with a flow rate of 40. mu. mol/min, hydrogen with a flow rate of 1000sccm, and ammonia with a flow rate of 3000sccm were simultaneously introduced into the reaction chamber, and an AlN insert layer with a thickness of 0.5nm was grown on the GaN buffer layer.
And 5, manufacturing the barrier layer.
Ga source with the flow rate of 40 mu mol/min, Al source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm are simultaneously introduced into the reaction chamber, an AlGaN barrier layer with the thickness of 15nm is grown on the AlN insert layer, and then the AlGaN barrier layer is taken out.
And 6, manufacturing a cathode and an anode.
Manufacturing a mask on the AlGaN barrier layer, placing a sample wafer with the mask in a magnetron sputtering reaction chamber, and keeping the pressure of the reaction chamber at 8.8 multiplied by 10-2Pa, depositing cathode metal Ti/Al with the thickness of 30nm/100nm above the barrier layer by using aluminum and titanium target materials with the purity of 99.999 percent, and annealing at the high temperature of 830 ℃ for 30 s; and depositing anode metal Ni/Au/Ni with the thickness of 45nm/200nm/200nm by using nickel and gold target materials with the purity of 99.999% on the other side above the barrier layer, and taking out a sample wafer.
And 7, manufacturing a groove-shaped protection ring.
Making a mask on the AlGaN barrier layer twice, and then placing the sample in an RIE system using Cl2And BCl3Etching the open region with two gases to form a groove-type guard ring with a depth of 10nm and a width of 1 μm, wherein Cl2Flow rate of (2) was 10sccm, BCl3The flow rate of (2) is 20 sccm.
And 8, manufacturing a passivation layer.
And putting the sample wafer subjected to the steps into a plasma chemical vapor deposition PECVD reaction chamber, and depositing a 30 nm-thick SiN passivation layer at the high temperature of 400 ℃.
And 9, manufacturing cathode and anode contact holes.
And photoetching and etching the passivation layers on the anode and the cathode to form an anode contact hole and a cathode contact hole, thereby finishing the manufacture of the whole device.
In example 2, an AlGaN/GaN schottky barrier diode was fabricated with silicon carbide as a substrate, a trench-type guard ring having a depth of 12nm and a width of 2 μm.
Step one, preprocessing for eliminating dangling bonds is carried out on the surface of the silicon carbide substrate.
The specific implementation of this step is the same as step 1 of example 1.
And step two, extending the AlN nucleating layer.
Putting the pretreated silicon carbide substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) system, introducing an Al source, hydrogen and ammonia gas into a reaction chamber at the same time under the conditions that the chamber pressure is 70Torr and the temperature is 900 ℃, and growing a 60 nm-thick AlN nucleating layer on the substrate, wherein the flow of the Al source is 70 mu mol/min, the flow of the hydrogen gas is 1600sccm, and the flow of the ammonia gas is 5000 sccm.
And step three, manufacturing a buffer layer.
Ga source with the flow rate of 60 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm are simultaneously introduced into the reaction chamber, and a GaN buffer layer with the thickness of 3.5 mu m is grown on the AlN nucleating layer.
And step four, manufacturing the insertion layer.
An Al source with a flow rate of 70. mu. mol/min, hydrogen with a flow rate of 1600sccm, and ammonia with a flow rate of 5000sccm were simultaneously introduced into the reaction chamber, and an AlN insert layer with a thickness of 1nm was grown on the GaN buffer layer.
And step five, manufacturing the barrier layer.
Ga source with flow rate of 70 mu mol/min, Al source with flow rate of 70 mu mol/min, hydrogen with flow rate of 1600sccm and ammonia with flow rate of 5000sccm are simultaneously introduced into the reaction chamber, an AlGaN barrier layer with thickness of 25nm is grown on the AlN insert layer, and a sample wafer is taken out.
And sixthly, manufacturing a cathode and an anode.
Manufacturing a mask on the AlGaN barrier layer, placing a sample wafer with the mask in a magnetron sputtering reaction chamber, and keeping the pressure of the reaction chamber at 8.8 multiplied by 10-2Pa, depositing cathode metal Ti/Al with the thickness of 30nm/100nm above the barrier layer by using aluminum and titanium target materials with the purity of 99.999 percent, and annealing at the high temperature of 830 ℃ for 30 s; and depositing anode metal Ni/Au/Ni with the thickness of 45nm/200nm/200nm by using nickel and gold target materials with the purity of 99.999% on the other side above the barrier layer, and taking out a sample wafer.
And seventhly, manufacturing the groove-shaped protection ring.
Making a mask on the AlGaN barrier layer twice, and then placing the sample in an RIE system using Cl2And BCl3Etching the open region with two gases to form a groove-type guard ring with a depth of 12nm and a width of 2 μm, wherein Cl2Flow rate of (2) was 10sccm, BCl3The flow rate of (2) is 20 sccm.
Eighthly, manufacturing SiO with the thickness of 30nm on the epitaxial wafer2And a passivation layer.
The specific implementation of this step is the same as step 8 of example 1.
And step nine, photoetching and etching the passivation layers on the anode and the cathode to form an anode contact hole and a cathode contact hole, and finishing the manufacture of the whole device.
In example 3, an AlGaN/GaN schottky barrier diode was fabricated using gallium nitride as a substrate and a recessed guard ring having a depth of 15nm and a width of 3 μm.
Step A, preprocessing for eliminating dangling bonds is carried out on the surface of the gallium nitride substrate.
The specific implementation of this step is the same as step 1 of example 1.
And step B, extending the AlN nucleating layer.
And putting the pretreated gallium nitride silicon substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) system, and introducing an Al source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm into the reaction chamber at the same time under the conditions that the pressure of the chamber is 100Torr and the temperature is 900 ℃ to grow an AlN nucleating layer with the thickness of 100 nm.
And step C, manufacturing a buffer layer.
Ga source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm are simultaneously introduced into the reaction chamber, and a GaN buffer layer with the thickness of 6 mu m grows on the AlN nucleating layer.
And D, manufacturing an insertion layer.
An Al source with a flow rate of 100. mu. mol/min, hydrogen with a flow rate of 2000sccm, and ammonia with a flow rate of 6000sccm were simultaneously introduced into the reaction chamber, and an AlN insert layer with a thickness of 2nm was grown on the GaN buffer layer.
And E, manufacturing the barrier layer.
Ga source with the flow rate of 100 mu mol/min, Al source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm are simultaneously introduced into the reaction chamber, an AlGaN barrier layer with the thickness of 30nm is grown on the AlN insert layer, and a sample wafer is taken out.
And F, manufacturing a cathode and an anode.
Manufacturing a mask on the AlGaN barrier layer, placing a sample wafer with the mask in a magnetron sputtering reaction chamber, and keeping the pressure of the reaction chamber at 8.8 multiplied by 10-2Pa, depositing cathode metal Ti/Al with the thickness of 30nm/100nm above the barrier layer by using aluminum and titanium target materials with the purity of 99.999 percent, and annealing at the high temperature of 830 ℃ for 30 s; and depositing anode metal Ni/Au/Ni with the thickness of 45nm/200nm/200nm by using nickel and gold target materials with the purity of 99.999% on the other side above the barrier layer, and taking out a sample wafer.
And G, manufacturing a groove-shaped protection ring.
Making a mask on the AlGaN barrier layer twice, and then placing the sample in an RIE system using Cl2And BCl3Etching the open region with two gases to form a groove-type guard ring with a depth of 15nm and a width of 3 μm, wherein Cl2Flow rate of (2) was 10sccm, BCl3The flow rate of (2) is 20 sccm.
Step H, manufacturing Al with the thickness of 30nm on the epitaxial wafer2O3And a passivation layer.
The specific implementation of this step is the same as step 8 of example 1.
And step I, photoetching and etching the passivation layers on the anode and the cathode to form an anode contact hole and a cathode contact hole, and finishing the manufacture of the whole device.
The above description is only three specific examples of the present invention, however, the present invention is not limited to the specific details in the above embodiments, and many simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications all fall within the protection scope of the present invention.

Claims (10)

1. The utility model provides a AlGaN/GaN schottky barrier diode based on groove type guard ring structure, from bottom to top includes substrate (1), nucleation layer (2), buffer layer (3), inserted layer (4) and barrier layer (5), the top of barrier layer (5) is equipped with positive pole (7) and negative pole (8), be passivation layer (9) between this positive pole (7) and negative pole (8), its characterized in that, the positive pole below in barrier layer (5) is carved with the degree of depth and is 10 ~ 15nm, the width is the recess of 1 ~ 3 mu m, form groove type guard ring (6), be used for reducing positive pole below fringe electric field peak value, improve breakdown voltage.
2. Diode according to claim 1, characterized in that the substrate (1) is of sapphire or Si or SiC or GaN bulk material.
3. The diode of claim 1, wherein:
the nucleation layer (2) is made of AlN and has the thickness of 30-100 nm.
The buffer layer (3) is made of GaN and has the thickness of 1-6 mu m.
4. The diode of claim 1, wherein:
the insertion layer (4) is made of AlN and has the thickness of 0.5-2 nm;
the barrier layer (5) is made of AlGaN and has a thickness of 15-30 nm.
5. The diode of claim 1, wherein: the passivation layer (9) adopts SiN or SiO2Or Al2O3Or HfO2A medium.
6. A manufacturing method of an AlGaN/GaN Schottky barrier diode based on an F ion guard ring structure is characterized by comprising the following steps:
1) pretreating the surface of the substrate for eliminating dangling bonds, and placing the pretreated substrate in H2Carrying out heat treatment in the reaction chamber at 950 ℃ and carrying out epitaxial growth of an AlN nucleating layer with the thickness of 30-100 nm on the substrate by adopting an MOCVD (metal organic chemical vapor deposition) process;
2) depositing an intrinsic GaN buffer layer with the thickness of 1-6 mu m on the AlN nucleating layer by adopting an MOCVD (metal organic chemical vapor deposition) process;
3) depositing an AlN insert layer with the thickness of 0.5-2 nm on the GaN buffer layer by adopting an MOCVD process;
4) depositing an AlGaN barrier layer with the thickness of 15-30 nm on the AlN insert layer by adopting an MOCVD (metal organic chemical vapor deposition) process;
5) manufacturing a mask on the AlGaN barrier layer, depositing cathode metal above the barrier layer by adopting a magnetron sputtering process, annealing at the high temperature of 830 ℃, and depositing anode metal on the other side above the barrier layer by adopting the magnetron sputtering process, wherein the cathode metal adopts Ti/Al or Ti/Al/Ni/Au or Ti/Al/Mo/Au, and the anode metal adopts Ni/Au/Ni or Ni/Au or W/Au or Mo/Au;
6) mask is made again on AlGaN barrier layer, and RIE process is adopted to use Cl2And BCl3Etching the open hole region by two gases to form a groove-shaped protection ring with the depth of 10-15 nm and the width of 1-3 mu m, wherein Cl2Flow rate of (2) was 10sccm, BCl3The flow rate of (2) is 20 sccm;
7) placing the epitaxial wafer subjected to the steps into a Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction chamber for carrying out passivation layer deposition;
8) and photoetching and etching the passivation layers on the anode and the cathode to form an anode contact hole and a cathode contact hole, thereby finishing the manufacture of the whole device.
7. The method of claim 6, wherein: the MOCVD process parameters of the step 1) and the step 3) are as follows: the pressure in the reaction chamber is 10-100 Torr, the flow rate of Al source is 40-100 μmol/min, the flow rate of ammonia gas is 3000-6000sccm, and the flow rate of hydrogen gas is 1000-2000 sccm.
8. The method of claim 6, wherein: the MOCVD process parameters of the step 2) are as follows: the pressure in the reaction chamber is 10-100 Torr, the flow rate of Ga source is 40-100 μmol/min, the flow rate of ammonia gas is 3000-6000sccm, and the flow rate of hydrogen gas is 1000-2000 sccm.
9. The method of claim 6, wherein: the MOCVD process parameters in the step 4) are as follows: the pressure in the reaction chamber is 10-100 Torr, the flow rate of Al source is 40-100 μmol/min, the flow rate of Ga source is 40-100 μmol/min, the flow rate of ammonia gas is 3000-6000sccm, and the flow rate of hydrogen gas is 1000-2000 sccm.
10. The method according to claim 6, characterized in that in step 5) the magnetron sputtering process is carried out with the conditions: adopts aluminum, titanium, nickel, mold, tungsten, lead and gold with the purity of 99.999 percent as the target material, and keeps the pressure of the reaction chamber at 8.8 to 9.2 multiplied by 10- 2Pa。
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