CN102280494A - Normally-closed field control channel GaN heterojunction diode - Google Patents
Normally-closed field control channel GaN heterojunction diode Download PDFInfo
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Abstract
The invention discloses a normally-closed field control channel GaN heterojunction diode, belonging to the technical field of semiconductor device. The normally-closed field control channel GaN heterojunction diode adopts the technology of combining an insulated layer-groove, modulation doping and groove-modulation doping to change the conducting channel structure of the traditional GaN heterojunction diode, the original normally-opened spontaneous polarization GaN heterojunction conducing channel is changed into the normally-closed field control conducting channel combining spontaneous polarization and piezoelectric polarization to realize the field control characteriscit of the GaN heterojunction conducing channel, lower forward conducting resistance and enhance reverse cutoff capability. The normally-closed field control channel GaN heterojunction diode has lower forward conducting resistance and power and stronger reserve cutoff capability, is compatible with the AlGaN/GaN HEMT (High Electron Mobility Transistor) power switch device technology and is favorable for applying the device.
Description
Technical field
The invention belongs to technical field of semiconductor device, be specifically related to the GaN heterojunction diode.
Background technology
Gallium nitride (GaN) is one of representative of third generation semiconductor material with wide forbidden band, has the characteristic of following excellence: high critical breakdown electric field (～3.5 * 10
6V/cm), high electron mobility (～2000cm
2/ Vs), high two-dimensional electron gas (2DEG) concentration (～10
13Cm
-2), high hot operation ability.Obtained extensive use based on the HFET (HFETs) of GaN material (or high electron mobility HMETs, modulation-doped FET MODFETs below is referred to as HFETs) at semiconductor applications.Such device has characteristics such as reverse blocking voltage height, forward conduction resistance are low, operating frequency height, can realize therefore satisfying that system is more high-power to semiconductor device, higher frequency, the more requirement of small size and more abominable hot operation.
Diode is an extremely important part in the semiconductor applications, in recent years, has obtained huge development based on the diode of GaN heterojunction material, but the research of present stage mainly concentrates on the traditional devices structure (SBD and PiN) of GaN.On the one hand, these traditional structures are incompatible with the most ripe GaN switching device AlGaN/GaN HFET structure, and its development does not take into account the integrated mutually of device, are not suitable for semiconductor to needs integrated, intelligent, the miniaturization development.On the other hand, for these traditional devices structures itself, because its intrinsic working mechanism has determined such device to have bigger cut-in voltage and higher forward conduction resistance.Particularly, the potential barrier that the electron institute must be crossed over during GaN conventional diode forward conduction (the PN junction potential barrier of PiN pipe or the metal of SBD/GaN Schottky barrier etc.) makes such device have relatively poor device performance, is unfavorable for reducing device power consumption.As document Z.Z.
Et.al., " High voltage (450V) GaN Schottky rectifiers, " Appl.Phys.Lett., vol.74, pp:1266-1268, Mar., 1999 have reported the traditional SBD device of employing Au as anode metal, and its forward cut-in voltage is 4.2V.In order to reduce the forward cut-in voltage of SBD device, document S.Yoshida, et.al., " Low on-voltage operation AlGaN/GaN schottky barrier diode with a dual Schottky structure ", IEICE Trans.Electron.E88-C, pp.690-693,2005 have reported the SBD device of the bimetallic anode with low metal work function and high metal work function, with optimised devices forward cut-in voltage and oppositely withstand voltage contradictory relation, thereby realized lower forward cut-in voltage (～2V), but this device and traditional AlGaN/GaN HFETs technology are incompatible.Document Wanjun Chen, et.al., " High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors ", Appl.Phys.Lett., vol.92,253501,2008 have reported the field control power rectifier structure (L-FER) that adopts the fluorine plasma technology to realize, the composite anode that this structure constitutes by Schottky-ohmic contact has been realized device is opened and the electric field controls of ending, realized lower cut-in voltage, but the fluorine ion injection technique may be destroyed the AlGaN perfection of lattice, and the stability of device also requires study.
Traditional GaN heterojunction diode (as SBD) does not have a control electrode structure, is a kind of open type device, and forward conduction resistance is big, power consumption is bigger; Anti-phase by poor ability; Incompatible with the most ripe GaN heterojunction switching device AlGaN/GaN HFET structure, be unfavorable for the application of device.
Summary of the invention
The present invention is based on GaN heterojunction field control band model (FBM:Field-effect Band Model), propose type field, normal pass control raceway groove GaN heterojunction diode.Such diode belongs to normal pass type device, has lower forward conduction resistance and power consumption, and is stronger oppositely by ability, and with AlGaN/GaN HEMT device for power switching process compatible, help the application of device.
Technical scheme of the present invention may be summarized to be:
Normal type field, pass control raceway groove GaN heterojunction diode shown in Fig. 1,2 and 7, comprising: be deposited on the GaN heterojunction of substrate surface, pass type field control often conducting channel, anode 6 and negative electrode 3; Described GaN heterojunction is by A
xGa
1-xN (A is Al or In, 0＜x≤1) film 2 and GaN film 1 constitute, and wherein GaN film 1 is positioned at substrate and A
xGa
1-xBetween the N film 2; Control conducting channel in type field, described normal pass comprises two-dimensional electron gas (2DEG) conducting channel at GaN heterojunction boundary place and is positioned at GaN heterojunction boundary top and near the field control channel electrode 4 of anode, the conducting that can realize the two-dimensional electron gas conducting channel by the voltage of controlling filed control channel electrode 4 with end; Described anode 6 and negative electrode 3 lay respectively at the two ends of GaN heterojunction boundary top, wherein anode 6 and A
xGa
1-xRealize ohmic contact between the N film 2 and control channel electrode 4 short circuit mutually, negative electrode 3 and A with the field
xGa
1-xRealize ohmic contact between the N film 2.
Traditional GaN heterojunction diode (as SBD) does not have a control electrode structure, is a kind of open type device, and forward conduction resistance is big, power consumption is bigger; Anti-phase by poor ability; Incompatible with the most ripe GaN heterojunction switching device AlGaN/GaN HFET structure, be unfavorable for the application of device.With the GaN heterojunction schottky diode is example, and the 2DEG that is produced by spontaneous polarization makes that AlGaN/GaN heterojunction conducting channel itself is a kind of open type raceway groove, does not have the switch control characteristic; Simultaneously, electronics must be crossed over metal/semiconductor Schottky barrier and AlGaN/GaN potential barrier of heterogenous junction during owing to forward conduction, makes that such device forward conduction resistance is big, power consumption is bigger; In addition, such device is incompatible with the most ripe GaN heterojunction switching device AlGaN/GaNHFET structure, is unfavorable for the application of device.
Provided by the invention control channel-type GaN heterojunction diode, come down to change the conducting channel structure of existing GaN heterojunction diode, make original open type spontaneous polarization GaN heterojunction conducting channel into type field, normal pass control conducting channel that spontaneous polarization among the present invention and piezoelectric polarization combine, realized the field control characteristic of conducting channel and reduced forward conduction resistance and strengthened oppositely by ability, and provided by the invention control channel-type GaN heterojunction diode is compatible mutually with AlGaN/GaN HEMT device for power switching technology, helps the practical application of device more.
Provided by the invention control channel-type GaN heterojunction diode, the realization of its conducting channel of pass type field control often comprises three kinds of modes: (a) utilize groove technology to realize type field, normal pass control conducting channel (as shown in Figure 3); (b) adopt the modulation doping technology to realize type field, normal pass control conducting channel (as shown in Figure 2); (c) engagement groove technology and modulation doping technology realize type field, normal pass control conducting channel (as shown in Figure 7).
Figure 3 shows that type field, the normal pass control conducting channel (belonging to a kind of Schottky field control conducting channel) that utilizes groove technology to realize.At described A
xGa
1-xPart in the N film 2 between field control channel electrode 4 and two-dimensional electron gas conducting channel is left groove and (is equivalent to attenuate A
xGa
1-xAnd make the metal material of control channel electrode 4 extend into inside grooves the N film).Studies show that 2DEG concentration is along with A
xGa
1-xThe N film thickness reduces and reduces, therefore at suitable attenuate A
xGa
1-xUnder N film thickness and the metal/semiconductor contact berrier double action, the conduction band at heterojunction boundary place will be promoted to more than the Fermi level under the groove, and 2DEG forms normal pass type conducting channel with depleted.For the type conducting channel of normal pass, can adjust the raceway groove place by change raceway groove place electric field strength and can be with distribution, thereby control opening and shutting off of raceway groove.
Figure 1 shows that type field, the normal pass control conducting channel (insulating barrier-groove field control raceway groove) that utilizes insulating barrier-groove technology to realize.At described A
xGa
1-xPart in the N film 2 between field control channel electrode 4 and two-dimensional electron gas conducting channel is left groove and (is equivalent to attenuate A
xGa
1-xAnd, make a metal material of control channel electrode 4 extend into inside grooves then the N film), at groove surfaces deposition one deck insulating medium layer 5.Its operation principle is identical with Schottky field control conducting channel shown in Figure 3.
Figure 2 shows that type field, the normal pass control conducting channel that utilizes the modulation doping technology to realize.At described A
xGa
1-xPart in the N film 2 between field control channel electrode 4 and two-dimensional electron gas conducting channel is introduced modulation doping zone 8 (can be that the P type mixes, also can be that the N type mixes), and increases insulating medium layer 5 between a modulation doping zone 8 and a control channel electrode 4.By introducing modulation doping zone 8, GaN heterojunction boundary place conduction band by bringing up to below the Fermi level more than the Fermi level, is realized exhausting the 2DEG at heterojunction boundary place, thereby realized normal pass type conducting channel (as shown in Figure 4).In this structure, can not have insulating medium layer 5 yet and directly adopt Schottky contacts, its operation principle is similar.Wherein the doped chemical of P type doping is Mg; The doped chemical that described N type mixes is F, realizes that technology can be that ions diffusion or ion inject.
Figure 7 shows that type field, the normal pass control conducting channel (insulating barrier-groove field control raceway groove) that engagement groove technology and modulation doping technology realize.At described A
xGa
1-xPart in the N film 2 between field control channel electrode 4 and two-dimensional electron gas conducting channel is left groove and (is equivalent to attenuate A
xGa
1-xThe N film), utilize ions diffusion or ion implantation technology between groove and two-dimensional electron gas conducting channel, to introduce modulation doping zone 8 then, deposit one deck insulating medium layer 5 in groove surfaces at last, and make a metal material of control channel electrode 4 extend into inside grooves.Type field, the normal pass control conducting channel that this engagement groove technology and modulation doping technology realize can reduce the etching technics required precision of simple utilization groove technology, improves the device service behaviour of simple utilization modulation doping technology simultaneously.Type field, the normal pass control conducting channel that this engagement groove technology and modulation doping technology realize can not have insulating medium layer 5 yet, forms Schottky contacts, and its operation principle is similar.
Type field, normal pass provided by the invention control raceway groove GaN heterojunction diode, its basic functional principle is:
When device is in forward bias, when applying the forward voltage that is slightly larger than channel threshold voltage (this threshold voltage can be regulated as required) also promptly for a control channel electrode 4, control conducting channel is opened, form by the negative electrode Ohm contact electrode set out, through 2DEG conducting channel and a control raceway groove, finally arrive the electronic conduction path of anode Ohm contact electrode.When device is in reverse bias, also promptly to give to add negative voltage, the raceway groove below this moment composite anode is the remain off state still, does not have the conductive path from the negative electrode to the anode, makes device have reverse voltage endurance capability.In sum, this two terminal device diode rectification characteristic of showing forward conduction, oppositely ending.
Beneficial effect of the present invention shows:
Tradition GaN heterojunction diode (as SBD) since during forward conduction electronics must cross over metal/semiconductor Schottky barrier and AlGaN/GaN potential barrier of heterogenous junction, make such device have relatively poor forward conduction performance, be unfavorable for reducing device power consumption.In addition, these traditional structures are incompatible with the most ripe GaN heterojunction switching device AlGaN/GaN HFET structure, and its development fails to take into account the integrated mutually of device, and the incompatibility power semiconductor is to needs integrated, intelligent, the miniaturization development.Normal pass type GaN heterojunction field control channel-type diode provided by the present invention is by the electric field controls of type field, normal pass control conducting channel, for the device forward conduction provides a low-resistance channel (process is not any such as PN junction potential barrier or golden half Schottky barrier that contacts from the negative electrode to the anode for electronics), its forward voltage drop by conventional structure～1.5V is reduced to～0.5V, realized extremely low forward voltage drop, reduced power consumption and improved oppositely by ability.With this simultaneously, device preparation technology provided by the present invention and AlGaN/GaN HFET structure compatible, thus be the integrated good basis of having established of GaN power.
Description of drawings
Type field, the normal pass control raceway groove GaNg heterojunction diode structure schematic diagram that the insulating barrier-groove technology that adopts Fig. 1 realizes is by regulating D controllable thickness system device threshold voltage, by regulating L length controlled system break-over of device resistance.
Type field, the normal pass control raceway groove GaNg heterojunction diode structure schematic diagram that the modulation doping technology that adopts Fig. 2 realizes, 8 is the modulation doping zone.
Type field, the normal pass control raceway groove GaNg heterojunction diode structure schematic diagram that the groove technology that adopts Fig. 3 realizes.
Fig. 4 groove technology realizes being with the principle schematic of highly regulating.
Fig. 5 often pass type raceway groove opening process can be with principle schematic.
Type field, the normal pass control raceway groove GaNg heterojunction diode structure schematic diagram that the insulating barrier-groove technology that adopts Fig. 6 realizes, break-over of device resistance minimum when L=0.
Type field, the normal pass control raceway groove GaNg heterojunction diode structure schematic diagram that Fig. 7 use simultaneously groove and modulation doping technology realize.
Fig. 8 is used in combination the normal pass type AlGaN/GaN HFET device of groove technology and the realization of modulation doping technology and the integrated technique flow chart of normal type field, pass control raceway groove GaNg heterojunction diode; (a) substrate; (b) cutting is isolated; (c) ohmic contact; (d) groove etching; (e) modulation doping injects; (f) deposition insulating layer; (g) make metal electrode.
Insulating barrier-the groove technology that adopts Fig. 9 realizes normal pass type AlGaN/GaN HFET device and the integrated principle schematic of normal type field, pass control raceway groove GaNg heterojunction diode.
The field control channeling diode forward characteristic that the insulating barrier-groove technology that adopts Figure 10 realizes.
The field control channeling diode forward characteristic that the modulation doping technology that adopts Figure 11 realizes.
Among the above-mentioned figure: 1 is the GaN film; 2 is A
xGa
1-xThe N film, wherein A is Al or In, 0＜x≤1; 3 is negative electrode, and 4 is the raceway groove control electrode, and 5 is insulating medium layer, and 6 is anode, and 8 is the modulation doping zone, the 9HFET negative electrode, and the 10HFET positive electrode, the 11HFET gate electrode, 12 is groove, 13 is photoresist.
Embodiment
Normal type field, pass control raceway groove GaN heterojunction diode shown in Fig. 1,2 and 7, comprising: be deposited on the GaN heterojunction of substrate surface, pass type field control often conducting channel, anode 6 and negative electrode 3; Described GaN heterojunction is by A
xGa
1-xN (A is Al or In, 0＜x≤1) film 2 and GaN film 1 constitute, and wherein GaN film 1 is positioned at substrate and A
xGa
1-xBetween the N film 2; Control conducting channel in type field, described normal pass comprises two-dimensional electron gas (2DEG) conducting channel at GaN heterojunction boundary place and is positioned at GaN heterojunction boundary top and near the field control channel electrode 4 of anode, the conducting that can realize the two-dimensional electron gas conducting channel by the voltage of controlling filed control channel electrode 4 with end; Described anode 6 and negative electrode 3 lay respectively at the two ends of GaN heterojunction boundary top, wherein anode 6 and A
xGa
1-xRealize ohmic contact between the N film 2 and control channel electrode 4 short circuit mutually, negative electrode 3 and A with the field
xGa
1-xRealize ohmic contact between the N film 2.
Provided by the invention control channel-type GaN heterojunction diode, come down to change the conducting channel structure of existing GaN heterojunction diode, make original open type spontaneous polarization GaN heterojunction conducting channel into type field, normal pass control conducting channel that spontaneous polarization among the present invention and piezoelectric polarization combine, realized the field control characteristic of conducting channel and reduced forward conduction resistance and strengthened oppositely by ability, and provided by the invention control channel-type GaN heterojunction diode is compatible mutually with AlGaN/GaN HEMT device for power switching technology, helps the practical application of device more.
Provided by the invention control channel-type GaN heterojunction diode, the realization of its conducting channel of pass type field control often comprises three kinds of modes: (a) utilize groove technology to realize type field, normal pass control conducting channel (as shown in Figure 3); (b) adopt the modulation doping technology to realize type field, normal pass control conducting channel (as shown in Figure 2); (c) engagement groove technology and modulation doping technology realize type field, normal pass control conducting channel (as shown in Figure 7).
Figure 1 shows that type field, the normal pass control conducting channel (insulating barrier-groove field control raceway groove) that utilizes insulating barrier-groove technology to realize.At described A
xGa
1-xPart in the N film 2 between field control channel electrode 4 and two-dimensional electron gas conducting channel is left groove and (is equivalent to attenuate A
xGa
1-xAnd, make a metal material of control channel electrode 4 extend into inside grooves then the N film), at groove surfaces deposition one deck insulating medium layer 5.Studies show that 2DEG concentration is along with A
xGa
1-xThe N film thickness reduces and reduces, therefore at suitable attenuate A
xGa
1-xUnder N film thickness and the metal/semiconductor contact berrier double action, the conduction band at heterojunction boundary place will be promoted to more than the Fermi level under the groove, and 2DEG forms normal pass type conducting channel (as shown in Figure 4) with depleted.For the type conducting channel of normal pass, can adjust the raceway groove place by change raceway groove place electric field strength and can be with distribution, thereby control opening and shutting off of raceway groove.For type field, normal pass control conducting channel, can adjust the raceway groove place by change raceway groove place electric field strength and can be with distribution, thereby control opening and shutting off of raceway groove.This device basic functional principle is: when device is in forward bias, also promptly give the control channel electrode 4 (V
A) apply and be slightly larger than channel threshold voltage (V
Th) positive voltage the time (V
A＞V
Th), a control conducting channel is opened (as shown in Figure 5), form by negative electrode set out, through 2DEG conducting channel and a control raceway groove, finally arrive the electronic conduction path of anode.V when device is in reverse bias
A＜0), add negative voltage also promptly for control channel electrode 4, the raceway groove below this time control channel electrode 4 is the remain off state still, does not have the conductive path from the negative electrode to the anode, makes device have reverse voltage endurance capability.In sum, this two terminal device diode rectification characteristic of showing forward conduction, oppositely ending.In this structure, after etching forms groove, also can not deposit Al
2O
3, SiN
xDeng dielectric material and direct depositing metal electrode (as Ni, Pt etc.) constitutes Schottky field control conducting channel thus, it is identical that the potential barrier raceway groove is controlled in its operation principle and insulating barrier-groove field.Figure 11 utilizes the simulation result of GENESISE software to insulating barrier-groove technology field control channeling diode on state characteristic.In the AlGaN barrier layer thickness is under the condition of 20nm, and the AlGaN barrier layer of controlling the conducting channel district then and there is thinned to 2nm, and when SiN dielectric layer thickness was 2nm, the forward cut-in voltage of device reached 0.5V, and conduction resistance reaches 15m Ω cm
2
In insulating barrier-groove technology field control channeling diode, along with reducing of channel electrode distance L controlled in anode and field, device 2DEG channel length reduces, and helps reducing conducting resistance.Wherein conduction resistance obtains minimum value when L=0, as shown in Figure 6.In like manner, this design principle is applicable to enhancement mode (often pass type) dielectric layer field control channeling diode and the modulation doping field control channeling diode structure of back with narration.
Figure 2 shows that type field, the normal pass control conducting channel that utilizes the modulation doping technology to realize.At described A
xGa
1-xPart in the N film 2 between field control channel electrode 4 and two-dimensional electron gas conducting channel is introduced modulation doping zone 8 (can be that the P type mixes, also can be that the N type mixes), and increases insulating medium layer 5 between a modulation doping zone 8 and a control channel electrode 4.By introducing modulation doping zone 8, GaN heterojunction boundary place conduction band by bringing up to below the Fermi level more than the Fermi level, is realized exhausting the 2DEG at heterojunction boundary place, thereby realized normal pass type conducting channel.In this structure, can not have insulating medium layer 5 yet and directly adopt Schottky contacts, its operation principle is similar.Wherein the doped chemical of P type doping is Mg; The doped chemical that described N type mixes is F, realizes that technology can be that ions diffusion or ion inject.Figure 12 shows that a control conducting channel district not have the dielectric material and the on state characteristic of device when directly adopting Schottky contacts.In the AlGaN barrier layer thickness is under the condition of 25nm, and the elecrtonegativity fixed charge dosage that injects when the AlGaN barrier layer of modulating channel region reaches 2.3 * 10
12Cm
-3The time, the forward cut-in voltage of device reaches 0.55V, and conduction resistance reaches 33m Ω cm
2
For groove technology, the even AlGaN barrier layer of the following thickness of 5nm in actual process is because technological reason is difficult to acquisition, thereby the simple AlGaN barrier layer that passes through the precisely controlled 2nm of obtaining thick-channel place will be very difficult.And,, will take heavy dose of high-octane ion to be injected in the barrier layer for improving modulating action for electron concentration among the 2DEG for ion implantation technique.This not only can introduce a large amount of blemish of AlGaN and influence the reliability of device, and the part caused Coulomb scattering of the fixed charge meeting that enters heterojunction boundary simultaneously causes the remarkable decline of two-dimensional electron gas mobility.For alleviating the deficiency of these two kinds of technologies, the present invention proposes the combination process that carries out groove etching and ion injection at the modulation channel region.This method allows ion implantation dosage and energy to reduce when allowing the bigger AlGaN barrier layer of thickness.Simulation result shows that when the raceway groove modulator zone naked dielectric layer of composite anode, the AlGaN barrier layer thickness is that the cut-in voltage of device can be adjusted to 0.25V, adds less than 1 * 10 on this basis under the limit process conditions of 5nm
12Cm
-3Ion implantation dosage, can realize that the device cut-in voltage is modulated to and reach 0.5V.Figure 7 shows that type field, the normal pass control conducting channel (insulating barrier-groove field control raceway groove) that engagement groove technology and modulation doping technology realize.At described A
xGa
1-xPart in the N film 2 between field control channel electrode 4 and two-dimensional electron gas conducting channel is left groove and (is equivalent to attenuate A
xGa
1-xThe N film), utilize ions diffusion or ion implantation technology between groove and two-dimensional electron gas conducting channel, to introduce modulation doping zone 8 then, deposit one deck insulating medium layer 5 in groove surfaces at last, and make a metal material of control channel electrode 4 extend into inside grooves.Type field, the normal pass control conducting channel that this engagement groove technology and modulation doping technology realize can reduce the etching technics required precision of simple utilization groove technology, improves the device service behaviour of simple utilization modulation doping technology simultaneously.Type field, the normal pass control conducting channel that this engagement groove technology and modulation doping technology realize can not have insulating medium layer 5 yet, forms Schottky contacts, and its operation principle is similar.
Tradition GaN heterojunction diode (as SBD) since during forward conduction electronics must cross over metal/semiconductor Schottky barrier and AlGaN/GaN potential barrier of heterogenous junction, make such device have relatively poor forward conduction performance, be unfavorable for reducing device power consumption.In addition, these traditional structures are incompatible with the most ripe GaN heterojunction switching device AlGaN/GaN HFET structure, and its development fails to take into account the integrated mutually of device, and the incompatibility power semiconductor is to needs integrated, intelligent, the miniaturization development.Type field, normal pass provided by the present invention control raceway groove GaN heterojunction diode is by changing the conducting channel structure of existing GaN heterojunction diode, make original open type spontaneous polarization GaN heterojunction conducting channel into type field, normal pass control conducting channel that spontaneous polarization among the present invention and piezoelectric polarization combine, the conducting that realizes conducting channels by field control channel electrode 4 with end, provide a low-resistance channel (process is not any such as PN junction potential barrier or golden half Schottky barrier that contacts from the negative electrode to the anode for electronics) for the device forward conduction thus, its forward voltage drop by conventional structure～1.5V is reduced to～0.5V, realize extremely low forward voltage drop, reduced power consumption.With this simultaneously, device preparation technology provided by the present invention and normal pass type AlGaN/GaN HFET structure compatible, thus be the integrated good basis (as shown in Figure 8) of having established of GaN power.Fig. 9 is that example has realized the integrated of the integrated normal pass of an a kind of monolithic type AlGaN/GaN HFET device and a control channeling diode to adopt insulating barrier-groove technology to form normal pass type raceway groove, has the processing compatibility good with HFET so that of the present invention control channeling diode to be described.
Claims (10)
1. the raceway groove of pass type field control often GaN heterojunction diode comprises: be deposited on the GaN heterojunction of substrate surface, pass type field control often conducting channel, anode (6) and negative electrode (3); Described GaN heterojunction is by A
xGa
1-xN film (2) and GaN film (1) constitute, and wherein A is Al or In, 0＜x≤1, and GaN film (1) is positioned at substrate and A
xGa
1-xBetween the N film (2); Control conducting channel in type field, described normal pass comprises the two-dimensional electron gas conducting channel at GaN heterojunction boundary place and is positioned at GaN heterojunction boundary top and near the field control channel electrode (4) of anode, the conducting that can realize the two-dimensional electron gas conducting channel by the voltage of controlling filed control channel electrode (4) with end; Described anode (6) and negative electrode (3) lay respectively at the two ends of GaN heterojunction boundary top, wherein anode (6) and A
xGa
1-xRealize ohmic contact between the N film (2) and control channel electrode (4) short circuit mutually, negative electrode (3) and A with the field
xGa
1-xThe N film is realized ohmic contact between (2).
2. type field, normal pass according to claim 1 control raceway groove GaN heterojunction diode is characterized in that described A
xGa
1-xThe part that is positioned in the N film (2) between a control channel electrode (4) and the two-dimensional electron gas conducting channel has groove, and the metal material of a control channel electrode (4) extends into inside grooves.
3. type field, normal pass according to claim 2 control raceway groove GaN heterojunction diode is characterized in that having modulation doping zone (8) between described groove and the two-dimensional electron gas conducting channel.
4. according to claim 2 or type field, 3 described normal pass control raceway groove GaN heterojunction diode, it is characterized in that having insulating medium layer (5) between described field control channel electrode (4) and the groove surfaces.
5. according to claim 2 or type field, 3 described normal pass control raceway groove GaN heterojunction diode, it is characterized in that the lateral separation between described groove and the anode (6) is the smaller the better.
6. type field, normal pass according to claim 1 control raceway groove GaN heterojunction diode is characterized in that described A
xGa
1-xThe part that is positioned in the N film (2) between a control channel electrode (4) and the two-dimensional electron gas conducting channel is modulation doping zone (8).
7. type field, normal pass according to claim 5 control raceway groove GaN heterojunction diode is characterized in that having insulating medium layer (5) between a described modulation doping zone (8) and the control channel electrode (4).
8. according to claim 3, type field, 5 or 6 described normal pass control raceway groove GaN heterojunction diode, it is characterized in that mix for the P type in described modulation doping zone (8) or the N type mixes.
9. type field, normal pass according to claim 7 control raceway groove GaN heterojunction diode is characterized in that the doped chemical that described P type mixes is Mg; The doped chemical that described N type mixes is F.
10. according to claim 4 or type field, 7 described normal pass control raceway groove GaN heterojunction diode, it is characterized in that the material of described insulating medium layer (5) is SiO
2, Si
3N
4, AlN, Al
2O
3, MgO or Sc
2O
3
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| WO2013155930A1 (en) * | 2012-04-17 | 2013-10-24 | 苏州晶湛半导体有限公司 | Enhanced device and manufacturing method therefor |
| CN103531624A (en) * | 2012-07-03 | 2014-01-22 | 英飞凌科技奥地利有限公司 | Stress-controlled HEMT |
| CN104900643A (en) * | 2015-06-08 | 2015-09-09 | 西南交通大学 | Bidirectional triggering heterojunction type ESD protective device |
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| CN104051458B (en) * | 2013-03-14 | 2017-08-15 | 台湾积体电路制造股份有限公司 | Low leakage rectifier structure |
| CN106158949A (en) * | 2015-04-10 | 2016-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | III group-III nitride enhancement mode HEMT device |
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| CN106158948B (en) * | 2015-04-10 | 2020-05-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | III-nitride enhanced HEMT device and manufacturing method thereof |
| CN104952938A (en) * | 2015-05-07 | 2015-09-30 | 电子科技大学 | Gallium nitride heterojunction MIS grid-control power diode and manufacturing method thereof |
| CN104900643A (en) * | 2015-06-08 | 2015-09-09 | 西南交通大学 | Bidirectional triggering heterojunction type ESD protective device |
| CN104900643B (en) * | 2015-06-08 | 2017-12-01 | 西南交通大学 | A kind of two-way triggering heterojunction type ESD protection device |
| CN106409921A (en) * | 2016-10-31 | 2017-02-15 | 电子科技大学 | Lateral current regulative diode |
| CN108767017A (en) * | 2018-04-18 | 2018-11-06 | 北京大学深圳研究生院 | A kind of semiconductor devices and preparation method |
| CN108831932A (en) * | 2018-06-27 | 2018-11-16 | 电子科技大学 | A kind of gallium nitride transverse direction MIS- Schottky mixing anode diode |
| CN108831932B (en) * | 2018-06-27 | 2021-07-02 | 电子科技大学 | Transverse MIS-Schottky mixed anode diode of gallium nitride |
| CN109103243A (en) * | 2018-07-24 | 2018-12-28 | 厦门市三安集成电路有限公司 | A kind of PHEMT device of high value resistor |
| CN110718591A (en) * | 2019-11-12 | 2020-01-21 | 西安电子科技大学 | AlGaN/GaN Schottky barrier diode based on groove-type guard ring structure and manufacturing method |
| CN115117150A (en) * | 2022-08-24 | 2022-09-27 | 成都功成半导体有限公司 | GaN HEMT power device and preparation method thereof |
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