CN110698077B - 一种铯铅卤素钙钛矿厚膜及其制备与应用 - Google Patents
一种铯铅卤素钙钛矿厚膜及其制备与应用 Download PDFInfo
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- -1 Cesium-lead halogen Chemical class 0.000 title claims abstract description 59
- 229910052736 halogen Inorganic materials 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000010453 quartz Substances 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 27
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- 238000001816 cooling Methods 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 11
- 230000008018 melting Effects 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- NAJCQJKJQOIHSH-UHFFFAOYSA-L [Pb](Br)Br.[Cs] Chemical compound [Pb](Br)Br.[Cs] NAJCQJKJQOIHSH-UHFFFAOYSA-L 0.000 claims description 10
- 229910052582 BN Inorganic materials 0.000 claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 8
- LNDFVHXALNWEMX-UHFFFAOYSA-L [Pb](I)I.[Cs] Chemical group [Pb](I)I.[Cs] LNDFVHXALNWEMX-UHFFFAOYSA-L 0.000 claims description 5
- MMLQOPRJRSDTDA-UHFFFAOYSA-L [Pb](I)Br.[Cs] Chemical compound [Pb](I)Br.[Cs] MMLQOPRJRSDTDA-UHFFFAOYSA-L 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- OGJOCASXPRMNAK-UHFFFAOYSA-L cesium;dichlorolead Chemical compound [Cs].Cl[Pb]Cl OGJOCASXPRMNAK-UHFFFAOYSA-L 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 20
- 238000001514 detection method Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000000843 powder Substances 0.000 description 18
- 239000013078 crystal Substances 0.000 description 12
- 239000002994 raw material Substances 0.000 description 6
- VPTDFJOOPWOZRN-UHFFFAOYSA-N [I].[Pb].[Cs] Chemical compound [I].[Pb].[Cs] VPTDFJOOPWOZRN-UHFFFAOYSA-N 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- IWDXBHSUFKRAQP-UHFFFAOYSA-N [Cs].[Pb] Chemical compound [Cs].[Pb] IWDXBHSUFKRAQP-UHFFFAOYSA-N 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- LFYCKKJNFOBFLI-UHFFFAOYSA-N IBr.[Pb].[Cs] Chemical compound IBr.[Pb].[Cs] LFYCKKJNFOBFLI-UHFFFAOYSA-N 0.000 description 2
- YJUMYFAHFVTFKQ-UHFFFAOYSA-N [Br].[I].[Pb].[Cs] Chemical compound [Br].[I].[Pb].[Cs] YJUMYFAHFVTFKQ-UHFFFAOYSA-N 0.000 description 2
- NCFBWCVNPJEZMG-UHFFFAOYSA-N [Br].[Pb].[Cs] Chemical compound [Br].[Pb].[Cs] NCFBWCVNPJEZMG-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
本发明属于以半导体材料制备的辐射探测技术领域,公开了一种铯铅卤素钙钛矿厚膜及其制备与应用,其中制备方法具体是:(1)将铯铅卤素钙钛矿材料分散在基底上,然后加热使温度升至铯铅卤素钙钛矿的熔点以上,直至铯铅卤素钙钛矿完全熔化成液态;(2)将石英片覆盖在液态的钙钛矿材料上,使被石英片覆盖的液态钙钛矿材料在所述基底上均匀分散;(3)将温度以0.1~5℃/min的速率缓慢降低进行冷却,然后将石英片揭掉,即可得到粘连在基底上的钙钛矿厚膜。本发明通过对制备方法的整体工艺流程设计(包括温度控制程序)等进行改进,能够获得高性能、取向一致、稳定的、高灵敏度大面积厚膜,解决现有技术存在的工艺复杂、灵敏度低、取向不一致等问题。
Description
技术领域
本发明属于以半导体材料制备的辐射探测技术领域,更具体地,涉及一种铯铅卤素钙钛矿厚膜及其制备与应用,其中制备方法制得的准单晶铯铅卤素钙钛矿厚膜尤其能够作为功能材料应用于辐射探测器中。
背景技术
辐射成像探测器广泛应用于医疗卫生、公共安全和高端制造业等行业。用于探测放射性射线的探测器一般有气体探测器、闪烁探测器、半导体探测器等类型,其中半导体探测器能得到最好的能量分辨率。由于X射线折射率为1导致X射线难以聚焦,因此需要和成像尺寸相匹配的大面积半导体厚膜。
近年来,有机无机杂化铅基钙钛矿半导体由于其高X射线吸收系数,载流子收集效率高等优势,在X射线探测领域取得了一系列进展(Nature 550,87–91,2017;Nat.Photon11,436,2017),已经实现了高灵敏度X射线检测,但是有机离子的存在降低了材料的稳定性,随后发现的铯铅卤素钙钛矿用铯离子取代有机离子,提高了材料的稳定性。但是制备铯铅卤素钙钛矿厚膜的工艺存在厚度不够,晶粒太小,取向不一致等问题,限制了铯铅卤素钙钛矿在辐射成像领域的应用。
发明内容
针对现有技术的以上缺陷或改进需求,本发明的目的在于提供一种铯铅卤素钙钛矿厚膜及其制备与应用,其中通过对制备方法的整体工艺流程设计(包括温度控制程序)等进行改进,能够获得高性能、取向一致、稳定的、高灵敏度大面积的准单晶铯铅卤素钙钛矿厚膜,解决现有技术存在的工艺复杂、灵敏度低、取向不一致等问题。制备得到的铯铅卤素钙钛矿具有上下贯穿的大尺寸晶粒(具有准单晶特性)和一致的取向,保证了厚膜的辐射探测应用时载流子的高效传输。
为实现上述目的,按照本发明的一个方面,提供了一种铯铅卤素钙钛矿厚膜的制备方法,其特征在于,包括以下步骤:
(1)将铯铅卤素钙钛矿材料置于基底上,然后加热使温度升至铯铅卤素钙钛矿的熔点以上,直至铯铅卤素钙钛矿完全熔化成液态;
(2)保持温度维持在铯铅卤素钙钛矿的熔点以上,将石英片覆盖在液态的钙钛矿材料上,使被石英片覆盖的液态钙钛矿材料在所述基底上均匀分散;
(3)将温度以0.1~5℃/min的速率缓慢降低进行冷却,然后将石英片揭掉,利用石英片与铯铅卤素钙钛矿之间的惰性,即可得到粘连在基底上的钙钛矿厚膜,该钙钛矿厚膜即为厚度不低于1um的铯铅卤素钙钛矿厚膜。
按照本发明的另一方面,提供了一种铯铅卤素钙钛矿厚膜的制备方法,其特征在于,包括以下步骤:
(1)将铯铅卤素钙钛矿材料放置具有凹槽的石英片上,然后加热使温度升至铯铅卤素钙钛矿的熔点以上,直至铯铅卤素钙钛矿完全熔化成液态,这些液态钙钛矿材料将完全填充所述石英片的凹槽;
(2)保持温度维持在铯铅卤素钙钛矿的熔点以上,将基底覆盖在液态的钙钛矿材料上,使液态钙钛矿材料在被基底和石英片包围形成的凹槽空间内均匀分散;
(3)将温度以0.1~5℃/min的速率缓慢降低进行冷却,然后将石英片取下,利用石英片与铯铅卤素钙钛矿之间的惰性,即可得到粘连在基底上的钙钛矿厚膜,该钙钛矿厚膜即为厚度不低于1um的铯铅卤素钙钛矿厚膜。
作为本发明的进一步优选,所述步骤(1)中,所述铯铅卤素钙钛矿为铯铅碘CsPbI3、铯铅溴CsPbBr3、铯铅氯CsPbCl3、或铯铅碘溴CsPbIxBr(3-x);所述铯铅碘溴CsPbIxBr(3-x)中,0<x<3。
作为本发明的进一步优选,所述基底为FTO透明导电玻璃基底、或氮化硼基底。
作为本发明的进一步优选,所述步骤(2)中采用的所述石英片的表面经过抛光处理,具有干净光滑的表面。
按照本发明的另一方面,本发明提供了利用上述制备方法制备得到的铯铅卤素钙钛矿厚膜。
作为本发明的进一步优选,所述铯铅卤素钙钛矿厚膜的表面粗糙度小于100nm,晶粒大于50um。
作为本发明的进一步优选,所述铯铅卤素钙钛矿厚膜的面积不低于2.5cm×2.5cm。
按照本发明的又一方面,本发明提供了上述铯铅卤素钙钛矿厚膜在辐射探测中的应用。
通过本发明所构思的以上技术方案,与现有技术相比,通过对制备方法的整体工艺流程设计进行控制,可以通过改变原料铯铅卤素钙钛矿材料(如铯铅卤素钙钛矿粉末)的质量来改变膜的厚度,通过将其熔化,定形凝固的方法,避免了溶剂的使用,从而避免了溶剂挥发过程中带来的气孔。最终通过将惰性材料石英片来获得平整的表面。这种方法制备的铯铅卤素钙钛矿具有上下贯穿的大尺寸晶粒和一致的取向,保证了厚膜的辐射探测应用时载流子的高效传输。
钙钛矿辐射探测多选择MAPbI3等有机无机杂化钙钛矿,但是由于多采用溶液法制备厚膜,所以在厚膜制备时存在溶剂挥发导致的孔洞问题,而以CsPbBr3为代表的铯铅卤素钙钛矿多用于生长晶体测试高能gamma辐射探测,本发明利用CsPbBr3存在熔点的特点,配合惰性的石英片,将CsPbBr3熔化再结晶定形的方法,避免了溶剂的使用,制备出大面积厚膜(面积尤其可不低于2.5cm×2.5cm,甚至可以达到20cm×20cm),得到的厚膜同时能够进一步用于辐射探测。
本发明采用石英片作为惰性材料,利用石英片与铯铅卤素钙钛矿之间的惰性,能够避免石英片与钙钛矿厚膜之间的粘连。而其他材料,如云母、BN、石墨等,它们与CsPbBr3为代表的铯铅卤素钙钛矿之间具有粘附性,不体现出惰性,因此无法使用。
利用本发明,在保证原料充足的情况下,能够得到厚度大于1um的铯铅卤素钙钛矿厚膜,尤其能够得到厚度大于50um的铯铅卤素钙钛矿厚膜,并且,该钙钛矿厚膜还具有粗糙度小于100nm、晶粒大于50um,且取向一致的特性,在辐射探测领域尤其具有较大的应用前景。
附图说明
图1是依照本发明制备厚膜的表面原子力显微镜,从而得到表面粗糙度。
图2是依照本发明制备厚膜的截面扫描电子显微镜示意图。
图3是依照本发明制备厚膜的X射线衍射。
图4是依照本发明制备的辐射探测器X射线探测IT曲线。
图5是依照本发明制备的辐射探测器不同电压下的光电流曲线。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。此外,下面所描述的本发明各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。
本发明中铯铅卤素钙钛矿厚膜的制备方法,总体来说,是先将铯铅卤素钙钛矿原料均匀的分散在基底上,然后加热到钙钛矿熔点以上,待钙钛矿完全熔化之后,将干净光滑的石英片盖在钙钛矿上,对整体降温,将石英片轻轻取走得到铯铅卤素钙钛矿厚膜。
以下为具体实施例:
实施案例1:
本实例将介绍FTO基底上240um铯铅溴钙钛矿厚膜的制备:
取(0.5g)铯铅溴(CsPbBr3)粉末,再将粉末均匀铺在2.5cm×2.5cm的FTO上,将FTO和粉末加热到600℃,持续5min,铯铅溴(CsPbBr3)粉末熔化成液态后,将同炉升温的石英片覆盖在液态铯铅溴上,然后以5℃/min速度降温到室温,然后揭开石英片得到FTO基底上铯铅溴厚膜。
实施案例2:
本实例将介绍FTO基底上480um铯铅溴钙钛矿厚膜的制备:
取(1g)铯铅溴(CsPbBr3)粉末,再将粉末均匀铺在2.5cm×2.5cm的FTO上,将FTO和粉末加热到600℃,持续5min,铯铅溴(CsPbBr3)粉末熔化成液态后,将石英覆盖在液态铯铅溴上,然后以5℃/min速度降温到室温,然后揭开石英片得到FTO基底上铯铅溴厚膜。
实施案例3:
本实例将介绍FTO基底上240um铯铅碘钙钛矿厚膜的制备:
取(0.6g)铯铅碘(CsPbI3)粉末,再将粉末均匀铺在2.5cm×2.5cm的FTO上,将FTO和粉末加热到570℃,持续5min,铯铅碘(CsPbI3)粉末熔化成液态后,将石英覆盖在液态铯铅碘上,然后以5℃/min速度降温到室温,然后揭开石英片得到FTO基底上铯铅碘厚膜。
实施案例4:
本实例将介绍FTO基底上240um铯铅溴碘钙钛矿厚膜的制备:
取(0.6g)铯铅溴碘(CsPbBr2I)粉末,再将粉末均匀铺在2.5cm×2.5cm的FTO上,将FTO和粉末加热到580℃,持续5min,铯铅溴碘(CsPbBr2I)粉末熔化成液态后,将石英覆盖在液态铯铅溴碘上,然后以5℃/min速度降温到室温,然后揭开石英片得到FTO基底上铯铅溴碘厚膜。
实施案例5:
本实例将介绍BN(氮化硼)基底上240um铯铅碘钙钛矿厚膜的制备:
取(0.6g)铯铅碘(CsPbI3)粉末,再将粉末均匀铺在2.5cm×2.5cm的BN上,将BN和粉末加热到570℃,持续5min,铯铅碘(CsPbI3)粉末熔化成液态后,将石英覆盖在液态铯铅碘上,然后以5℃/min速度降温到室温,然后揭开石英片得到BN基底上铯铅碘厚膜。
图1所示对应实例1所得的钙钛矿厚膜(图1中的a、b、c、d分别对应厚膜的不同区域),由图1可以看出,钙钛矿厚膜具有平整的表面,粗糙度为67nm。
图2所示对应实例1所得的钙钛矿厚膜,由图2可以看出,钙钛矿厚膜的厚度达到240um,且晶粒上下贯穿;晶粒尺寸大,能够体现准单晶的特性。
图3所示对应实例1所得的钙钛矿厚膜,由图3可以看出,钙钛矿厚膜具有单一的取向,且峰宽只有0.07°,因此膜具有良好的结晶性。
另外,除上述实施例所采用的后覆盖石英片的制备方法外,还可以采用具有凹槽的石英片,先将铯铅卤素钙钛矿原材料放置在石英片的凹槽内,然后升温使铯铅卤素钙钛矿熔化,接着将基底覆盖在液态的钙钛矿材料上,使液态钙钛矿材料在被基底和石英片包围形成的凹槽空间内均匀分散,冷却后取下石英片也得铯铅卤素钙钛矿厚膜。这种凹槽设计的石英片能够保证熔化后液体的不外流。
本发明得到的铯铅卤素钙钛矿厚膜可进一步用于构建辐射探测器器件,例如,在FTO玻璃基底上的CsPbBr3厚膜蒸发上80nm厚的金电极,制备结构为FTO/CsPbBr3/Au的辐射探测器件结构。
上述辐射探测器具有比较大的灵敏度,图4所示对应该辐射探测器在电场强度4.2V mm-1下,灵敏度达到23349μC Gyair -1cm-2,同时从IT曲线看,基线平稳,具有良好的探测性能,并且,从图4中可以看出,随着X射线辐射剂量的降低,探测器的电流也相应降低。图5所示对应该辐射探测器在不同电压下工作,对于不同的剂量具有良好的线性响应。
上述实施例仅以粉末原材料为例,基于本发明也可以采用其他宏观形貌的原材料(如块材等)。
本领域的技术人员容易理解,以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (3)
1.一种铯铅卤素钙钛矿厚膜的制备方法,其特征在于,包括以下步骤:
(1)将铯铅卤素钙钛矿材料放置具有凹槽的石英片上,然后加热使温度升至铯铅卤素钙钛矿的熔点以上,直至铯铅卤素钙钛矿完全熔化成液态,这些液态钙钛矿材料将完全填充所述石英片的凹槽;
(2)保持温度维持在铯铅卤素钙钛矿的熔点以上,将基底覆盖在液态的钙钛矿材料上,使液态钙钛矿材料在被基底和石英片包围形成的凹槽空间内均匀分散;
(3)将温度以0.1~5℃/min的速率缓慢降低进行冷却,然后将石英片取下,利用石英片与铯铅卤素钙钛矿之间的惰性,即可得到粘连在基底上的钙钛矿厚膜,该钙钛矿厚膜即为厚度不低于1μm的铯铅卤素钙钛矿厚膜。
2.如权利要求1所述铯铅卤素钙钛矿厚膜的制备方法,其特征在于,所述步骤(1)中,所述铯铅卤素钙钛矿为铯铅碘CsPbI3、铯铅溴CsPbBr3、铯铅氯CsPbCl3、或铯铅碘溴CsPbIxBr(3-x);所述铯铅碘溴CsPbIxBr(3-x)中,0<x<3。
3.如权利要求1所述铯铅卤素钙钛矿厚膜的制备方法,其特征在于,所述基底为FTO透明导电玻璃基底、或氮化硼基底。
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