CN110690095A - 处理边缘环的方法、基底处理系统和图像传感器 - Google Patents
处理边缘环的方法、基底处理系统和图像传感器 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000012545 processing Methods 0.000 title claims abstract description 58
- 238000012546 transfer Methods 0.000 claims abstract description 97
- 230000008569 process Effects 0.000 claims description 45
- 239000012636 effector Substances 0.000 claims description 40
- 238000004891 communication Methods 0.000 claims description 15
- 230000004044 response Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 30
- 230000007246 mechanism Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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Abstract
提供了处理边缘环的方法、基底处理系统和图像传感器。在所述方法中,利用传送机器人将第一边缘环从处理模块内的基底支撑件去除。然后,利用传送机器人将第二边缘环放置在基底支撑件上。利用传送机器人将图像传感器(例如,圆盘形的无线图像传感器)设置在第二边缘环之上。图像传感器产生图像信息,所述图像信息被分析以确定第二边缘环的对准。
Description
本申请要求于2018年7月4日在韩国知识产权局(KIPO)提交的第10-2018-0077863号韩国专利申请的优先权,该韩国专利申请的内容通过引用全部包含于此。
技术领域
示例实施例涉及基底处理系统和方法。更具体地,示例实施例涉及用于替换、检查并对准边缘环的设备和方法。
背景技术
在诸如半导体蚀刻装备的晶圆处理系统中,边缘环会是由于等离子体的离子轰击而损坏的消耗部件,因此需要替换损坏的边缘环。然而,为了替换损坏的边缘环,可能需要破坏处理腔室的真空以允许损坏部分的替换。因此,替换损坏的边缘环的工艺会是耗时的并且降低了生产率。因为静电卡盘与边缘环之间的距离是影响工艺产量的重要因素,所以会需要边缘环的精确对准。
发明内容
示例实施例提供了能够精确替换边缘环而不破坏处理腔室真空的用于基底处理系统的边缘环替换、检查和对准方法和设备,从而可以提高工艺产量。
根据一些示例实施例,处理边缘环的方法包括:利用传送机器人将第一边缘环从处理模块内的基底支撑件去除。然后,利用传送机器人将第二边缘环放置在基底支撑件上。利用传送机器人将图像传感器(例如,圆盘形的无线图像传感器)设置在第二边缘环之上。图像传感器产生图像信息,所述图像信息被分析以确定第二边缘环的对准。
根据另外的示例实施例,一种基底处理系统包括:处理模块,包括被构造为支撑基底的基底支撑件和被构造为从基底支撑件可移动地延伸以升高基底支撑件上的边缘环的起模顶杆。该系统也包括传送模块,传送模块连接到处理模块并且包括用于将圆盘形的基底、边缘环和图像传感器选择性地传送到基底支撑件的传送机器人。该系统还包括被构造为响应于由图像传感器产生的图像信息来控制传送机器人和起模顶杆的控制器电路。
根据再另外的示例实施例,一种图像传感器包括:壳体,被构造为放置在基底处理系统的基底支撑件上方;多个照相机,由壳体支撑并且被构造为产生指示边缘环在基底支撑件上的位置的图像信息。图像传感器还包括控制器电路和通信电路,控制器电路由壳体支撑并且被构造为控制多个照相机,通信电路可操作地结合到控制器电路并且被构造为接收用于控制器电路的控制信号并发送由多个照相机产生的图像信息。
根据一些示例实施例,可以自动替换基底处理系统中的诸如处理模块内的边缘环的消耗部件,而不需要破坏基底处理系统中的真空。可以确定并校正新替换的边缘环的对准。因此,可以减少由于边缘环替换和对准引起的时间损失,并且边缘环对准可以更精确。这可以提高工艺产量。
附图说明
通过下面结合附图的详细描述,示例实施例将被更清楚地理解。如这里所述,图1至图14表示非限制性示例实施例。
图1是示出根据示例实施例的基底处理系统的视图。
图2是示出图1中的处理模块内的基底支撑件的透视图。
图3是示出图2中的“A”部分的放大图。
图4是示出图2中的基底支撑件的剖视图。
图5是示出连接到图1中的基底处理系统的提升机构和第二传送机器人的控制器电路的框图。
图6A是示出设置在图1中的真空传送模块内的第二传送机器人的端部执行器的平面图。
图6B是示出由图6A的端部执行器传送晶圆的平面图。
图6C是示出由图6A的端部执行器传送边缘环的平面图。
图6D是示出由图6A的端部执行器传送圆盘式图像传感器的平面图。
图7是示出正在图1中的基底支撑件之上移动的圆盘式图像传感器的平面图。
图8是示出与图7中的圆盘式图像传感器进行无线通信的控制器电路的框图。
图9是示出由图7中的圆盘式图像传感器获得的图像的灰度强度的曲线图。
图10是示出根据示例实施例的用于边缘环对准检查的图像传感器的分解透视图。
图11是示出设置在图10中的图像传感器的上板的下表面上的组件的透视图。
图12是示出设置在图10中的图像传感器的框架的上表面上的组件的透视图。
图13是示出图10中的图像传感器的仰视图。
图14是示出根据示例实施例的用于检查基底处理系统中的边缘环的对准的操作的方法的流程图。
具体实施方式
在下文中,将参照附图详细地解释示例实施例。
图1是示出根据示例实施例的基底处理系统的视图。图2是示出图1中的处理模块内的基底支撑件的透视图。图3是示出图2中的“A”部分的放大图。图4是示出图2中的基底支撑件的剖视图。图5是示出连接到图1中的基底处理系统的提升机构和第二传送机器人的控制器电路的框图。图6A是示出设置在图1中的真空传送模块内的第二传送机器人的端部执行器的平面图。图6B是示出由图6A的端部执行器传送晶圆的平面图。图6C是示出由图6A的端部执行器传送边缘环的平面图。图6D是示出由图6A的端部执行器传送圆盘式图像传感器的平面图。图7是示出正在图1中的基底支撑件之上移动的圆盘式图像传感器的平面图。图8是示出与图7中的圆盘式图像传感器进行无线通信的控制器电路的框图。图9是示出由图7中的圆盘式图像传感器获得的图像的灰度强度的曲线图。
参照图1至图9,基底处理系统10可以包括索引模块、真空传送模块40和至少一个处理模块50。此外,基底处理系统10还可以包括索引模块与真空传送模块40之间的装载锁定室30。
索引模块可以包括盒式(cassette)载台20和大气压传送模块22。其中能够容纳多个晶圆W、多个边缘环ER或圆盘式图像传感器200的载体FOUP可以被支撑在盒式载台20的支撑板上。大气压传送模块22内的第一传送机器人60可以在环境(即,大气)条件下操作,并且可以在载体FOUP与装载锁定室30之间传送晶圆、边缘环或图像传感器。
装载锁定室30可以用作大气压传送模块22与真空传送模块40之间的接口室。因此,装载锁定室30可以提供受控制的接口以允许将晶圆、边缘环或图像传感器从大气压传送模块22传送到真空传送模块40。
真空传送模块40内的第二传送机器人70可以在真空条件下操作,并且可以在装载锁定室30与处理模块50之间传送晶圆、边缘环或图像传感器。
多个处理模块50可以均匀地分布在真空传送模块40周围。处理模块50可以用于执行半导体单元工艺(例如,蚀刻工艺、沉积工艺、电镀工艺、清洁工艺等)。例如,处理模块50可以包括能够使用等离子体蚀刻基底的等离子体处理设备。处理模块50可以是被构造为蚀刻腔室内的诸如半导体晶圆W的基底上的层的设备。这里,基底可以包括半导体基底、玻璃基底等。处理模块50可以包括腔室,该腔室被构造为提供用于处理诸如晶圆W的基底和位于腔室内以支撑基底的基底支撑件100的空间。
腔室可以提供对晶圆执行等离子体蚀刻工艺的空间。腔室可以包括诸如铝、不锈钢等的金属。
参照图2、图3和图4,基底支撑件100可以包括支撑板110、绝缘环120、绝缘板130、边缘环ER和外环OR。支撑板110可以设置为用于利用静电力保持基底的静电卡盘。边缘环ER可以布置在基底支撑件100的上表面上以围绕晶圆。边缘环ER可以用作用于精确地确保晶圆的位置并将等离子体聚焦到晶圆上的聚焦环。外环OR可以用作用于保护边缘环ER的外表面的盖环。
在示例实施例中,基底处理系统10还可以包括提升机构,以使边缘环ER能够移动到升高的位置。参照图4和图5,提升机构可以包括将边缘环ER提升到升高的位置的多个起模顶杆140、使起模顶杆140向上和向下移动的致动器142以及连接到致动器142以提供驱动致动器142的电力的致动器驱动器144。致动器驱动器144可以结合到控制器电路80以在替换边缘环ER期间控制提升机构的操作。
起模顶杆140可以在基底支撑件100内向上和向下是可移动的,以支撑边缘环ER。起模顶杆140可以接收通过第二传送机器人70的端部执行器72传送到处理模块50中的边缘环ER并将边缘环ER移动到基底支撑件100上。起模顶杆140可以缩回以将边缘环ER安置在基底支撑件100上或者延伸以从基底支撑件100提升边缘环ER。
基底处理系统10还可以包括排放单元。排放单元可以通过排放线连接到安装在处理模块50的底部中的排放口。排放单元可以包括诸如涡轮分子泵等的真空泵以控制处理模块50的压力,使得处理模块50内部的处理空间可以减压到所需的真空水平。此外,处理副产物和残余处理气体可以通过排放口排出。
在示例实施例中,控制器电路80可以控制连接到控制器电路80的各种组件,以控制基底处理系统10。控制器电路80可以包括诸如处理器、存储器和一个或更多个接口的一些示例组件。控制器电路80可以用于部分地基于感测值来控制连接到控制器电路80的器件。
例如,当在处理模块50中要替换边缘环ER时,控制器电路80可以控制真空传送模块40和处理模块50,使得它们在损坏的边缘环ER可以被新的边缘环ER替换的同时保持在真空状态。可以在将半导体晶圆W装载到处理模块50中之前执行替换损坏的边缘环ER的工艺。控制器电路80可以向第一传送机器人60和第二传送机器人70以及致动器驱动器144发送控制信号以取回损坏的边缘环ER并在基底支撑件100上用新的边缘环ER替换。
此外,控制器电路80可以控制拍摄新替换的边缘环ER的图像传感器以检查布置状态,并且可以基于检查结果调整边缘环ER的布置。控制器电路80可以向第一传送机器人60和第二传送机器人70以及致动器驱动器144发送控制信号以将圆盘式图像传感器200(见图1)移动到边缘环ER之上并校正边缘环ER的位置。当圆盘式图像传感器200插入到处理模块50中以拍摄边缘环ER时,控制器电路80可以控制真空传送模块40和处理模块50保持在真空状态。
在示例实施例中,大气压传送模块22可以包括第一传送机器人60,真空传送模块40可以包括第二传送机器人70。第一传送机器人60可以包括与第二传送机器人70相同或相似的构造。在下文中,将解释第二传送机器人70,并且将省略关于第一传送机器人60的任何重复解释。
如图6A至图6D中所示,第二传送机器人70可以被构造为传送晶圆W、边缘环ER和圆盘式图像传感器200。第二传送机器人70可以包括被构造为移动晶圆W、边缘环ER和圆盘式图像传感器200的端部执行器72。端部执行器72可以包括延伸为支撑晶圆W、边缘环ER或圆盘式图像传感器200的一对指状物。
多个接触垫74可以布置在端部执行器72的表面上。例如,第一组接触垫可以用于与晶圆W和圆盘式图像传感器200接触。第二组接触垫可以用于与边缘环ER接触。
如图7中所示,在新的边缘环ER已经安装在基底支撑件100上之后,可以将圆盘式图像传感器200提供给处理模块50,以拍摄边缘环ER的对准状态。如图7中所示,圆盘式图像传感器200可以具有与晶圆相似的盘形。支撑在第二传送机器人70的端部执行器72上的圆盘式图像传感器200可以滑入到处理模块50中以设置在基底支撑件100之上。
参照图7和图8,圆盘式图像传感器200可以包括照相机部210、传感器控制器电路220、电源230和通信电路240。照相机部210可以包括用于拍摄边缘环ER的第一照相机212、用于拍摄支撑板110的晶圆起模顶杆孔112的第二照相机214以及当端部执行器72滑入到处理模块50中时用于拍摄基底支撑件100的晶圆/边缘环起模顶杆的第三照相机216。
四个第一照相机212可以沿与边缘环ER的位置对应的外周区域安装在圆盘式图像传感器200的下表面上,以拍摄边缘环ER。三个第二照相机214可以与支撑板110的晶圆起模顶杆孔112对应地安装在圆盘式图像传感器200的下表面上,以拍摄晶圆起模顶杆孔112。第三照相机216可以在端部执行器72的前进方向上安装在圆盘式图像传感器200的前侧中以在圆盘式图像传感器200在基底支撑件100之上移动时拍摄基底支撑件100。
传感器控制器电路220可以控制照相机部210的操作。传感器控制器电路220可以基于控制器电路80的控制信号产生拍摄控制信号。照相机部210可以根据拍摄控制信号操作。
通信电路240可以与用于远程管理圆盘式图像传感器200的控制器电路80进行无线通信。通信电路240可以实时地向控制器电路80发送拍摄的图像信息,并且可以从控制器电路80接收控制信号。例如,通信电路240可以包括诸如Wi-Fi、RF通信等的通信装置,然而,它可以不限于此。
控制器电路80可以基于发送的图像信息实时分析边缘环ER的对准状态,并且可以基于分析来校正边缘环ER的对准误差。
例如,控制器电路80可以基于从第二照相机214发送的图像信息确定圆盘式图像传感器200的对准状态。可以利用三个晶圆起模顶杆孔112的位置矢量来确定圆盘式图像传感器200的参考位置坐标。控制器电路80可以基于从第一照相机212发送的图像信息来确定边缘环ER的对准状态。如图9中所示,可以基于边缘环ER的图像来确定边缘环ER与静电卡盘(ESC)(即,支撑板)110之间的间隙距离G。因此,可以确定新替换的边缘环ER是否精确地位于基底支撑件100上。
当确定边缘环ER未对准时,控制器电路80可以向第二传送机器人70和致动器驱动器144发送用于校正边缘环ER的未对准的控制信号。在这种情况下,第二传送机器人70可以将圆盘式图像传感器200从处理模块50收回。然后,提升机构可以将边缘环ER移动到升高的位置,第二传送机器人70的端部执行器72可以在升高的边缘环ER下方滑动,然后,起模顶杆140可以缩回,以将边缘环ER放置在端部执行器72上。然后,第二传送机器人70可以执行边缘环ER的对准校正,然后,提升机构可以升高起模顶杆140以支撑边缘环ER。第二传送机器人70可以被收回,然后,圆盘式图像传感器200可以移动到处理模块50,以检查边缘环ER的对准状态。
当圆盘式图像传感器200移动到处理模块50时,控制器电路80也可以基于从第三照相机216发送的图像信息来确定起模顶杆140操作是否正常。在起模顶杆140在圆盘式图像传感器200移动到处理模块50时因故障而升高的情况下,控制器电路80可以使第二传送机器人70的操作停止。
在一些实施例中,控制器电路80可以基于从第一照相机212而不是第二照相机214发送的图像信息来确定圆盘式图像传感器200的对准状态。在这种情况下,可以省略第二照相机。控制器电路80可以检测由第一照相机212拍摄的支撑板(例如,ESC)110的外形以计算支撑板110的中心坐标,并且因此可以确定圆盘式图像传感器200的参考位置坐标。
可选地,控制器电路80可以基于从第一照相机212而不是第二照相机214发送的图像信息来确定圆盘式图像传感器200的对准状态。控制器电路80可以通过由第一照相机212拍摄的支撑板110的外坝114的图像来计算支撑板110的中心坐标,并且因此可以确定圆盘式图像传感器200的参考位置坐标。
在下文中,将解释圆盘式图像传感器的构造。
图10是示出根据示例实施例的用于边缘环对准检查的图像传感器的分解透视图。图11是示出设置在图10中的图像传感器的上板的下表面上的组件的透视图。图12是示出设置在图10中的图像传感器的框架的上表面上的组件的透视图。图13是示出图10中的图像传感器的仰视图。
参照图10至图13,圆盘式图像传感器200可以包括具有圆盘形的壳体。圆盘式壳体可以包括框架204、位于框架204的上表面上的上板202和设置在框架204的下表面上的下板206。
在示例实施例中,上板202和框架204可以彼此附着。下板206可以具有与上板202对应的形状,并且可以附着到框架204的下表面。上板202和下板206可以彼此叠置,并且框架204置于上板202与下板206之间。圆盘式图像传感器200可以具有与晶圆对应的总体上圆盘形的形状。
具有多个照相机的照相机部可以布置在框架204的上表面上。照相机部可以包括第一照相机212、第二照相机214和第三照相机216。第一照相机至第三照相机可以分别包括照明光源。
四个第一照相机212可以沿相对最外面的外周区域布置。第一照相机212可以通过框架204的下表面拍摄。与第一照相机212相比,第二照相机214可以布置在图像传感器的相对内部区域中。第二照相机214可以通过框架204的下表面拍摄。第三照相机216可以布置在框架204的外侧中。第三照相机216可以安装为通过框架204的前侧拍摄。
下板206可以粘附到框架204的下表面。下板206可以包括透明材料。因此,第一照相机212和第二照相机214可以通过框架204的下表面拍摄。
下板206可以与上板202分隔开。第三照相机216可以通过上板202与下板206之间的空间拍摄。
传感器控制器电路220、电源230和通信电路240可以安装在上板202的下表面上。因此,照相机部、传感器控制器电路220、电源230和通信电路240可以设置在上板202与下板206之间。
如参照图7和图8所描述的,圆盘式图像传感器200可以被支撑在第二传送机器人70的端部执行器72上,并且可以通过端部执行器72移动。具体地,支撑在端部执行器72上的圆盘式图像传感器200可以移动到处理模块50中,以位于新替换的边缘环ER之上。圆盘式图像传感器200的第一照相机212和第二照相机214可以通过端部执行器72的一对指状物之间暴露的空间来拍摄边缘环ER。
在下文中,将解释用于替换边缘环的操作和利用基底处理系统检查边缘环的未对准的方法。图14是示出根据示例实施例的用于检查基底处理系统中的边缘环的对准的操作的流程图。
参照图1、图5、图7、图8和图14,可以用新的边缘环ER替换处理模块50内的损坏的边缘环ER(S100、S110)。在示例实施例中,在将半导体晶圆W装载到处理模块50中以对晶圆W执行处理之前,可以在盒式载台20上设置其中容纳新的边缘环ER和圆盘式图像传感器200的载体FOUP,然后可以从处理模块50收回损坏的边缘环ER。
具体地,在将起模顶杆140升高以使损坏的边缘环ER移动到升高的位置之后,第二传送机器人70的端部执行器72可以在升高的边缘环ER下方滑动。起模顶杆140可以缩回以将损坏的边缘环ER放置在端部执行器72上。然后,第二传送机器人70可以将损坏的边缘环ER从处理模块50传送到装载锁定室30。第一传送机器人60可以将损坏的边缘环ER从装载锁定室30传送到载体FOUP。
第一传送机器人60可以将新的边缘环ER从载体FOUP传送到装载锁定室30,并且第二传送机器人70可以将新的边缘环ER从装载锁定室30传送到处理模块50。
具体地,第二传送机器人70的支撑新的边缘环ER的端部执行器72可以在处理模块50内的基底支撑件100之上滑动。可以使起模顶杆140升高以支撑新的边缘环ER,可以使端部执行器72缩回,然后使起模顶杆140缩回,以将新的边缘环ER放置在基底支撑件100上。
可以在新替换的边缘环ER之上设置圆盘式图像传感器200(S120),可以检查边缘环ER的对准(S130),然后,可以基于检查结果来校正边缘环ER的位置(S140)。在将新的边缘环ER放置在基底支撑件100上之后,可以将圆盘式图像传感器200移动到处理模块50中,以拍摄边缘环ER。具体地,第一传送机器人60可以将圆盘式图像传感器200从载体FOUP传送到装载锁定室30,并且第二传送机器人70可以将圆盘式图像传感器200从装载锁定室30传送到处理模块50。
第二传送机器人70的支撑圆盘式图像传感器200的端部执行器72可以在处理模块50内的基底支撑件100之上滑动。在圆盘式图像传感器200在基底支撑件100之上被端部执行器72支撑的同时,圆盘式图像传感器200可以拍摄新替换的边缘环ER并使用无线通信实时地发送图像信息。
例如,圆盘式图像传感器200的第一照相机212可以拍摄边缘环ER,并且圆盘式图像传感器200的第二照相机214可以拍摄基底支撑件100的晶圆起模顶杆孔112。
基底处理系统10的控制器电路80可以实时分析由第一照相机至第三照相机212、214、216拍摄的图像信息,以检查边缘环ER的未对准。控制器电路80可以计算三个晶圆起模顶杆孔112的位置矢量以确定圆盘式图像传感器200的参考位置坐标。控制器电路80可以基于边缘环ER的图像来确定边缘环ER与静电卡盘(ESC)110之间的间隙距离。因此,可以确定新替换的边缘环ER是否精确地位于基底支撑件100上。
当确定边缘环ER未对准时,控制器电路80可以向第二传送机器人70和致动器驱动器144发送控制信号以使边缘环ER重新对准。在这种情况下,第二传送机器人70可以使圆盘式图像传感器200从处理模块50缩回。然后,提升机构可以将边缘环ER移动到升高的位置,第二传送机器人70的端部执行器72可以在边缘环ER下方滑动。可以使起模顶杆140缩回以将边缘环ER放置在端部执行器72上。第二传送机器人70可以执行边缘环ER的对准校正,然后,提升机构将起模顶杆140升高以支撑边缘环ER。可以使第二传送机器人70缩回并且可以将圆盘式图像传感器200再次移动到处理模块50以检查边缘环ER的对准状态。
在示例实施例中,圆盘式图像传感器200的第三照相机216可以拍摄基底支撑件100的上部。当将圆盘式图像传感器200移动到处理模块50时,控制器电路80可以基于从第三照相机216发送的图像信息来确定起模顶杆140操作是否正常。在当圆盘式图像传感器200移动到处理模块50时起模顶杆140操作异常的情况下,控制器电路80可以停止第二传送机器人70的操作。
如上面所提及的,可以在不需要破坏基底处理系统10中的真空的情况下替换处理模块50内的诸如边缘环ER的消耗部件,可以检查新替换的边缘环的对准,然后,可以基于检查结果来校正边缘环ER的未对准。因此,可以在不破坏真空的情况下自动替换边缘环ER,从而防止由于人工作业造成的时间损失,并且边缘环可以精确地对准从而提高晶圆的边缘区域的工艺产量。
根据示例实施例的由基底处理系统制造的半导体器件可以用于诸如计算系统的各种系统。半导体器件可以包括鳍式FET、DRAM、VNAND等。该系统可以应用于计算机、便携式计算机、膝上型计算机、个人便携式终端、平板电脑、手机、数字音乐播放器等。
前述内容仅是示例实施例的说明并且将不被解释为限制示例实施例。虽然已经描述了一些示例实施例,但是本领域技术人员将容易理解的是,在不实质上脱离本发明的新颖教导和优点的情况下,许多修改在示例实施例中是可行的。因此,所有这样的修改意图包括在示例实施例的如权利要求中所限定的范围内。
Claims (20)
1.一种处理边缘环的方法,所述方法包括:
利用传送机器人将第一边缘环从处理模块内的基底支撑件去除;
利用传送机器人将第二边缘环放置在基底支撑件上;
利用传送机器人将图像传感器设置在第二边缘环之上;
利用图像传感器产生图像信息;以及
分析图像信息以确定第二边缘环的对准。
2.根据权利要求1所述的方法,其中,利用传送机器人将第二边缘环放置在基底支撑件上的步骤包括:
在传送机器人的端部执行器上支撑第二边缘环;
将端部执行器设置在基底支撑件之上;
使起模顶杆在基底支撑件中延伸以提升第二边缘环;
使端部执行器从第二边缘环下方缩回;以及
使起模顶杆缩回以将第二边缘环放置在基底支撑件上。
3.根据权利要求2所述的方法,其中,利用传送机器人将图像传感器设置在第二边缘环之上的步骤包括:
在端部执行器上支撑图像传感器;以及
将端部执行器设置在基底支撑件之上。
4.根据权利要求1所述的方法,其中,通过利用无线通信从图像传感器传送图像信息来进行分析图像信息的步骤。
5.根据权利要求1所述的方法,其中,产生图像信息的步骤包括利用图像传感器的第一照相机拍摄边缘环的与基底支撑件的静电卡盘相邻的部分,其中,分析图像信息的步骤包括基于边缘环的所述部分的图像来确定边缘环与静电卡盘之间的间隙距离。
6.根据权利要求5所述的方法,其中,产生图像信息的步骤还包括利用图像传感器的第二照相机拍摄基底支撑件的晶圆起模顶杆孔,其中,分析图像信息的步骤还包括基于晶圆起模顶杆孔的图像确定图像传感器的参考位置坐标。
7.根据权利要求5所述的方法,其中,产生图像信息的步骤还包括在将图像传感器设置在第二边缘环之上之前利用图像传感器的第三照相机拍摄基底支撑件的上部,其中,分析图像信息的步骤还包括确定基底支撑件的起模顶杆操作是否正常。
8.根据权利要求5所述的方法,其中,产生图像信息的步骤还包括利用图像传感器的第一照相机拍摄基底支撑件的静电卡盘的外形,其中,分析图像信息的步骤还包括基于从图像信息计算的静电卡盘的中心坐标确定图像传感器的参考位置坐标。
9.根据权利要求1所述的方法,所述方法还包括响应于分析的图像信息利用传送机器人来校正边缘环的未对准。
10.根据权利要求9所述的方法,其中,利用传送机器人来校正边缘环的未对准的步骤包括:
使起模顶杆在基底支撑件中延伸以升高第二边缘环;
将传送机器人的端部执行器放置在升高的第二边缘环下方;
使起模顶杆缩回以将第二边缘环放置在端部执行器上;
利用传送机器人的端部执行器移动第二边缘环;
使起模顶杆延伸以将移动后的第二边缘环升高到传送机器人的端部执行器上方;
从升高的第二边缘环下方移动传送机器人的端部执行器;以及
使起模顶杆缩回以将第二边缘环放置在基底支撑件上。
11.一种基底处理系统,所述基底处理系统包括:
处理模块,包括被构造为支撑基底的基底支撑件和被构造为从基底支撑件可移动地延伸以升高基底支撑件上的边缘环的起模顶杆;
传送模块,连接到处理模块并且包括用于将圆盘形的基底、边缘环和图像传感器传送到基底支撑件的传送机器人;以及
控制器电路,被构造为响应于由图像传感器产生的图像信息来控制传送机器人和起模顶杆。
12.根据权利要求11所述的基底处理系统,其中,传送机器人包括被构造为运载基底、边缘环和图像传感器的端部执行器。
13.根据权利要求11所述的基底处理系统,其中,控制器电路被构造为操作起模顶杆和传送机器人,以将边缘环放置在基底上并且利用图像传感器使放置的边缘环在基底支撑件上对准。
14.根据权利要求11所述的基底处理系统,其中,控制器电路被构造为操作起模顶杆和传送机器人,以在处理模块和传送模块保持在真空状态的同时用第二边缘环替换第一边缘环并且利用图像传感器对准第二边缘环。
15.根据权利要求11所述的基底处理系统,其中,控制器电路被构造为操作起模顶杆和传送机器人,以使边缘环在基底支撑件上对准。
16.一种图像传感器,所述图像传感器包括:
壳体,被构造为放置在基底处理系统的基底支撑件上方;
多个照相机,由壳体支撑并且被构造为产生指示边缘环在基底支撑件上的位置的图像信息;
控制器电路,由壳体支撑并且被构造为控制所述多个照相机;以及
通信电路,可操作地结合到控制器电路并且被构造为接收用于控制器电路的控制信号并发送由所述多个照相机产生的图像信息。
17.根据权利要求16所述的图像传感器,其中,壳体包括:
圆盘形的下板;
框架,位于下板上;以及
圆盘形的上板,位于框架上,
其中,所述多个照相机由位于上板与下板之间的框架支撑。
18.根据权利要求16所述的图像传感器,其中,通信电路被构造为无线地接收用于控制器电路的控制信号并且被构造为无线地发送由所述多个照相机产生的图像信息。
19.根据权利要求16所述的图像传感器,其中,所述多个照相机包括被构造为拍摄基底支撑件上的边缘环的多个第一照相机和被构造为拍摄基底支撑件的晶圆起模顶杆孔的多个第二照相机。
20.根据权利要求19所述的图像传感器,其中,所述多个照相机还包括被构造为拍摄基底支撑件的上部的第三照相机。
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