CN110676270B - 图像传感器 - Google Patents

图像传感器 Download PDF

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Publication number
CN110676270B
CN110676270B CN201910542833.3A CN201910542833A CN110676270B CN 110676270 B CN110676270 B CN 110676270B CN 201910542833 A CN201910542833 A CN 201910542833A CN 110676270 B CN110676270 B CN 110676270B
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China
Prior art keywords
protective film
photoelectric conversion
organic film
film
conversion element
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CN201910542833.3A
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Chinese (zh)
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CN110676270A (zh
Inventor
奈良修平
关根裕之
石野隆行
田村文识
畠泽良和
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Tianma Japan Ltd
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Tianma Japan Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201910542833.3A 2018-07-02 2019-06-21 图像传感器 Active CN110676270B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018126170A JP7308595B2 (ja) 2018-07-02 2018-07-02 イメージセンサ
JP2018-126170 2018-07-02

Publications (2)

Publication Number Publication Date
CN110676270A CN110676270A (zh) 2020-01-10
CN110676270B true CN110676270B (zh) 2024-07-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910542833.3A Active CN110676270B (zh) 2018-07-02 2019-06-21 图像传感器

Country Status (3)

Country Link
US (1) US10914846B2 (OSRAM)
JP (1) JP7308595B2 (OSRAM)
CN (1) CN110676270B (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102569741B1 (ko) * 2018-10-31 2023-08-22 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 이를 포함하는 디지털 엑스레이 검출기
CN111508986A (zh) 2020-04-29 2020-08-07 Tcl华星光电技术有限公司 一种传感器及其制作方法以及光电转换装置
WO2021251081A1 (ja) * 2020-06-08 2021-12-16 ローム株式会社 半導体装置、電子機器
US11804503B2 (en) * 2020-06-12 2023-10-31 Sharp Kabushiki Kaisha Photoelectric conversion device and x-ray imaging device
JP7601696B2 (ja) * 2021-04-16 2024-12-17 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 フォトダイオードアレイ及びイメージセンサ
WO2023206316A1 (zh) * 2022-04-29 2023-11-02 京东方科技集团股份有限公司 探测基板、其制作方法及平板探测器
JP2023173690A (ja) * 2022-05-26 2023-12-07 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ
JP2024013440A (ja) * 2022-07-20 2024-02-01 シャープディスプレイテクノロジー株式会社 光電変換パネル、ｘ線撮像パネル、及び光電変換パネルの製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465824B1 (en) * 2000-03-09 2002-10-15 General Electric Company Imager structure
JP2010245078A (ja) * 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置
TW201403804A (zh) * 2012-07-05 2014-01-16 Sony Corp 固體攝像裝置及其製造方法、以及電子機器
JP2014081358A (ja) * 2012-09-27 2014-05-08 Fujifilm Corp 放射線画像検出装置
JP6099035B2 (ja) * 2012-10-12 2017-03-22 Ｎｌｔテクノロジー株式会社 光電変換装置及びその製造方法並びにｘ線画像検出装置
JP2014116429A (ja) * 2012-12-07 2014-06-26 Japan Display Inc 撮像装置及び撮像表示システム
JP2015012239A (ja) * 2013-07-01 2015-01-19 ソニー株式会社 撮像素子および電子機器
JP6384822B2 (ja) * 2013-11-07 2018-09-05 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ及びその製造方法
JP6074111B2 (ja) * 2014-03-28 2017-02-01 富士フイルム株式会社 放射線検出装置及び放射線検出装置の製造方法
WO2016002563A1 (ja) * 2014-06-30 2016-01-07 シャープ株式会社 撮像パネル及びｘ線撮像装置
JP5968481B2 (ja) * 2015-03-04 2016-08-10 キヤノン株式会社 半導体装置の製造方法
CN107636831A (zh) * 2015-06-04 2018-01-26 夏普株式会社 光电传感器基板
JP2017152656A (ja) * 2016-02-26 2017-08-31 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサおよびその製造方法
US10804314B2 (en) * 2016-09-21 2020-10-13 Sharp Kabushiki Kaisha Imaging panel and method for producing same
WO2018070349A1 (ja) * 2016-10-11 2018-04-19 シャープ株式会社 撮像パネル及びその製造方法
JP2018084485A (ja) * 2016-11-24 2018-05-31 コニカミノルタ株式会社 放射線画像撮影装置
KR102506885B1 (ko) * 2018-02-27 2023-03-06 삼성전자주식회사 이미지 센서

Also Published As

Publication number Publication date
JP7308595B2 (ja) 2023-07-14
US20200003911A1 (en) 2020-01-02
US10914846B2 (en) 2021-02-09
CN110676270A (zh) 2020-01-10
JP2020004935A (ja) 2020-01-09

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