CN110676214A - 一种金属填充弯管的垂直互联方法 - Google Patents
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Abstract
本发明公开了一种金属填充弯管的垂直互联方法,具体包括如下步骤:101)转接板制作步骤、102)注入金属步骤、103)成型步骤;本发明通过在高温下使金属熔融,然后在真空和大压力作用下,把液态金属填入到弯孔里面,冷却后形成弯孔内金属填充,同时避免了进行种子层沉积在沟槽这一步,节省了成本的一种金属填充弯管的垂直互联方法。
Description
技术领域
本发明涉及半导体技术领域,更具体的说,它涉及一种金属填充弯管的垂直互联方法。
背景技术
微波毫米波射频集成电路技术是现代国防武器装备和互联网产业的基础,随着智能通信、智能家居、智能物流、智能交通等“互联网+”经济的快速兴起,承担数据接入和传输功能的微波毫米波射频集成电路也存在巨大现实需求及潜在市场。
在后摩尔定律的时代背景下,通过传统的缩小晶体管尺寸的方式来提高集成度变得更加困难,。现在的电子系统正朝着小型化、多样化、智能化的方向发展,并最终形成具有感知、通信、处理、传输等融合多功能于一体的高集成度低成本综合电子系统。多功能综合电子系统的核心技术是集成,正在由平面集成向三维集成、由芯片级向集成度和复杂度更高的系统级集成发展。三维集成系统级封装能够解决同样面积内集成更多的晶体管的问题,是未来的发展方向。
通过转接板做载板或者盖板来做系统级封装的结构既能在架构上将芯片由平面布局改为堆叠式布局,又能集成无源器件或分立元件等系统构建,使得精度、密度增加,性能大大提高,代表着未来射频集成电路技术的发展趋势,在多方面存在极大的优势特性:
a)三维异构集成系统级封装采用一个芯片壳体来完成一个系统的全部互连,使总的焊点大为减少,也缩短了元件的连线路程,从而使电性能得以提高。
b)三维异构集成系统级封装在同一转接板芯片中叠加两个或更多的芯片,把Z方向的空间也利用起来,又不必增加封装引脚,两芯片叠装在同一壳内与芯片面积比均大于100%,三芯片叠装可增至250%;
c)物理尺寸小,重量轻。例如,最先进的技术可实现4层堆叠芯片只有1mm厚的超薄厚度,三叠层芯片的重量减轻35%;
不同工艺(如MEMS工艺、SiGe HBT、SiGe BiCMOS、Si CMOS、III-V(InP、GaN、GaAs)MMIC工艺等),不同材料(如Si、GaAs、InP)制作的不同功能的芯片(如射频、生物、微机电和光电芯片等)组装形成一个系统,有很好的兼容性,并可与集成无源元件结合。有数据显示,无线电和便携式电子整机中现用的无源元件至少可被嵌入30-50%。
但是在实际应用当中,因为作为载板的转接板需要做TSV来做联通导电柱,而目前能做填充导电柱的设备最大做到200um,再深的孔只能在孔壁做金属覆盖层,不能填满。此外,TSV填充工艺需要用到种子层沉积,金属电镀等工艺,这两步工艺只能用于垂直孔的填充,对于一些弯孔则不能作业。
发明内容
本发明克服了现有技术的不足,提供一种金属填充弯管的垂直互联方法。
本发明的技术方案如下:
一种金属填充弯管的垂直互联方法,具体包括如下步骤:
101)转接板制作步骤:转接板包括上转接板和下转接板;上转接板和下转接板的上表面都通过光刻和干法刻蚀工艺制作TSV孔;在上转接板上表面沉积氧化硅或者氮化硅,或者直接热氧化形成绝缘层,通过物理溅射,磁控溅射或者蒸镀工艺在绝缘层上方制作种子层;上转接板和下转接板表面制作焊盘;
上转接板和下转接板的上表面还制作沟槽,沟槽与TSV孔联通;把上转接板和下转接板的上表面进行焊接形成转接板,其中上转接板和下转接板的沟槽联通;然后对转接板的上表面和下表面都进行减薄,使TSV孔的底部露出形成弯曲互联通道;
102)注入金属步骤:步骤101)处理的转接板放入腔体中加热,并抽空弯曲互联通道中的气体,加热温度控制在50度到1000度之间;将低温熔融金属置于转接板上表面,通过压板施加压力,使低温熔融金属进入空弯曲互联通道中;翻转转接板,在转接板的下表面放置低温熔融金属,通过压板施加压力,使低温熔融金属完全填充满弯曲互联通道;
103)成型步骤:对步骤102)的转接板进行冷却腔体,撤走压力盘,对转接板的上表面和下表面进行金属抛光去除,得到金属做介质的垂直互联通道。
进一步的,低温熔融金属采用低熔点金属,熔点温度控制在100度到800度之间。
进一步的,低温熔融金属采用镓或者镓类合金。
进一步的,TSV孔直径范围在1um到1000um,深度在10um到1000um;绝缘层厚度范围在10nm到100um之间;种子层本身结构为一层或多层结构,厚度范围都在1nm到100um,材质采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合。
本发明相比现有技术优点在于:本发明通过在高温下使金属熔融,然后在真空和大压力作用下,把液态金属填入到弯孔里面,冷却后形成弯孔内金属填充,同时避免了进行种子层沉积在沟槽这一步,节省了成本。
附图说明
图1为本发明的转接板示意图;
图2为本发明的注入金属示意图;
图3为本发明的金属注入后示意图;
图4为本发明的结构示意图。
图中标识:TSV孔101、上转接板102、下转接板103、沟槽104、低温熔融金属105。
具体实施方式
下面详细描述本发明的实施方式,其中自始至终相同或类似的标号表示相同或类似的元件或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本发明而不能作为对本发明的限制。
本技术领域技术人员可以理解的是,除非另外定义,这里使用的所有术语(包括技术术语和科技术语)具有与本发明所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是,诸如通用字典中定义的那些术语应该被理解为具有与现有技术的上下文中的意义一致的意义,并且除非像这里一样的定义,不会用理想化或过于正式的含义来解释。
各实施方式中提到的有关于步骤的标号,仅仅是为了描述的方便,而没有实质上先后顺序的联系。各具体实施方式中的不同步骤,可以进行不同先后顺序的组合,实现本发明的发明目的。
下面结合附图和具体实施方式对本发明进一步说明。
实施例:
如图1至图4所示,一种金属填充弯管的垂直互联方法,具体包括如下步骤:
101)转接板制作步骤:转接板包括上转接板102和下转接板103;上转接板102和下转接板103的上表面都通过光刻和干法刻蚀工艺制作TSV孔101,TSV孔101直径范围在1um到1000um,深度在10um到1000um。在上转接板102上表面沉积氧化硅或者氮化硅,或者直接热氧化形成绝缘层,绝缘层厚度范围在10nm到100um之间。通过物理溅射,磁控溅射或者蒸镀工艺在绝缘层上方制作种子层,种子层厚度范围在1nm到100um,其本身结构可以是一层也可以是多层,材质可以是钛、铜、铝、银、钯、金、铊、锡、镍等中的一种或多种混合。上转接板102和下转接板103的表面制作焊盘(即上表面和下表面都设置焊盘)。焊盘金属厚度范围在1nm到100um,其本身结构可以是一层也可以是多层,金属材质可以是钛、铜、铝、银、钯、金、铊、锡、镍等中的一种或多种混合。
上转接板102和下转接板103的上表面还制作沟槽104,沟槽104和TSV孔101联通。把上转接板102和下转接板103的上表面进行焊接形成转接板,其中上转接板102和下转接板103的沟槽104联通。然后对转接板的上表面和下表面都进行减薄,使TSV孔101的底部露出形成弯曲互联通道。
102)注入金属步骤:步骤101)处理的转接板放入腔体中加热,并抽空弯曲互联通道中的气体,加热温度控制在50度到1000度之间;将低温熔融金属105置于转接板上表面,通过压板施加压力,使低温熔融金属105进入空弯曲互联通道中;翻转转接板,在转接板的下表面放置低温熔融金属105,通过压板施加压力,使低温熔融金属105完全填充满弯曲互联通道。其中,低温熔融金属105可以是镓,或者镓类合金,或者其他低熔点金属,熔点温度控制在100度到800度之间即可。
103)成型步骤:对步骤102)的转接板进行冷却腔体,撤走压力盘,对转接板的上表面和下表面进行低温熔融金属105抛光去除,得到低温熔融金属105做介质的垂直互联通道。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明构思的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明保护范围内。
Claims (4)
1.一种金属填充弯管的垂直互联方法,其特征在于:具体包括如下步骤:
101)转接板制作步骤:转接板包括上转接板和下转接板;上转接板和下转接板的上表面都通过光刻和干法刻蚀工艺制作TSV孔;在上转接板上表面沉积氧化硅或者氮化硅,或者直接热氧化形成绝缘层,通过物理溅射,磁控溅射或者蒸镀工艺在绝缘层上方制作种子层;上转接板和下转接板表面制作焊盘;
上转接板和下转接板的上表面还制作沟槽,沟槽与TSV孔联通;把上转接板和下转接板的上表面进行焊接形成转接板,其中上转接板和下转接板的沟槽联通;然后对转接板的上表面和下表面都进行减薄,使TSV孔的底部露出形成弯曲互联通道;
102)注入金属步骤:步骤101)处理的转接板放入腔体中加热,并抽空弯曲互联通道中的气体,加热温度控制在50度到1000度之间;将低温熔融金属置于转接板上表面,通过压板施加压力,使低温熔融金属进入空弯曲互联通道中;翻转转接板,在转接板的下表面放置低温熔融金属,通过压板施加压力,使低温熔融金属完全填充满弯曲互联通道;
103)成型步骤:对步骤102)的转接板进行冷却腔体,撤走压力盘,对转接板的上表面和下表面进行金属抛光去除,得到金属做介质的垂直互联通道。
2.根据权利要求1所述的一种金属填充弯管的垂直互联方法,其特征在于:低温熔融金属采用低熔点金属,熔点温度控制在100度到800度之间。
3.根据权利要求2所述的一种金属填充弯管的垂直互联方法,其特征在于:低温熔融金属采用镓或者镓类合金。
4.根据权利要求1所述的一种金属填充弯管的垂直互联方法,其特征在于:TSV孔直径范围在1um到1000um,深度在10um到1000um;绝缘层厚度范围在10nm到100um之间;种子层本身结构为一层或多层结构,厚度范围都在1nm到100um,材质采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合。
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