CN110672881A - Metal gate structure and method of fabricating the same - Google Patents

Metal gate structure and method of fabricating the same Download PDF

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Publication number
CN110672881A
CN110672881A CN201910937920.9A CN201910937920A CN110672881A CN 110672881 A CN110672881 A CN 110672881A CN 201910937920 A CN201910937920 A CN 201910937920A CN 110672881 A CN110672881 A CN 110672881A
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CN
China
Prior art keywords
welding
gate structure
metal gate
main body
bodies
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Pending
Application number
CN201910937920.9A
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Chinese (zh)
Inventor
孙凤勤
高金德
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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Priority to CN201910937920.9A priority Critical patent/CN110672881A/en
Publication of CN110672881A publication Critical patent/CN110672881A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/20Sample handling devices or methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23PMETAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P15/00Making specific metal objects by operations not covered by a single other subclass or a group in this subclass

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

The invention discloses a metal grid structure directly used for welding an atom probe analysis sample, which comprises a main body, wherein a welding body accommodating structure is formed at the edge of one side of the main body; a plurality of welding bodies are arranged on the bottom wall of the welding body accommodating structure, the top surface of the welding body accommodating structure is a welding plane, and the welding plane can be directly welded with an atom probe analysis sample plane. The invention also discloses a manufacturing method of the metal grid structure capable of being directly welded with the atom probe analysis sample. The invention can reduce the secondary processing and manufacturing links, can avoid the pollution caused by secondary manufacturing, further save the production cost and improve the analysis efficiency and the accuracy of the atom probe.

Description

Metal gate structure and method of fabricating the same
Technical Field
The invention relates to the field of semiconductor production, in particular to a metal gate structure for welding an atom probe Analysis (APT) sample. The invention also relates to a manufacturing method of the metal gate structure.
Background
With the diversification of material structures, attempts have been made to reconstruct three-dimensional views of the internal structure of a substance from nanometer dimensions, thereby explaining the macroscopic properties of the material and intentionally adjusting or improving the microstructure matching the properties. Atom probe Analysis (APT) can confirm the atom type and intuitively reconstruct the spatial position thereof, and can relatively truly reflect the distribution structure of atoms of different elements in a three-dimensional space of a material.
There are two methods for preparing APT samples: an electropolishing method and a Focused Ion Beam (Focused Ion Beam) sampling method. Among them, FIB sampling is more common. The metal grid used in the existing APT sample test needs to be manufactured through secondary processing during testing, redeposition is easily caused to contaminate the sample, the time for preparing the sample is prolonged through the secondary processing, and the working efficiency is reduced.
Disclosure of Invention
The invention aims to provide a metal gate structure which is used for atom probe analysis and can be directly welded with an atom probe analysis sample.
The invention aims to solve another technical problem of providing a manufacturing method which is used for atom probe analysis and can be directly welded with an atom probe analysis sample to form a metal gate structure.
In order to solve the above technical problems, the present invention provides a metal gate structure directly used for welding an atom probe analysis sample, comprising:
a main body 1, one side edge of which is formed with a welding body containing structure 2;
and the welding bodies 3 are arranged on the bottom wall of the welding body accommodating structure 2, the top surfaces of the welding bodies are welding planes, and the welding planes can be directly welded with the analysis sample plane of the atom probe.
Optionally, in the metal gate structure, the main body 1 is a cylinder, and a groove is formed on a sidewall of the main body 1 from the top surface to the bottom surface, and the groove serves as the solder receiving structure 2.
Optionally, the metal gate structure further comprises a main body 1 with a diameter of 1000 μm to 5000 μm and a height of 1mm to 10 mm. The diameter is preferably 3000 μm and the height is preferably 5 mm.
Alternatively, in the metal gate structure, the solder body 3 is a cylinder.
Optionally, in the metal gate structure, the diameter of the welding body 3 is 1mm-5 mm. The diameter is preferably 3 mm.
Alternatively, in the metal gate structure, a plurality of bonding bodies 3 are arranged in a line at equal intervals.
Alternatively, in the metal gate structure, the distance between the welding bodies 3 is 100-500 μm. The distance is preferably 200 μm.
Alternatively, in the metal gate structure, a plurality of bonding bodies 3 are sequentially numbered.
Alternatively, in the metal grid structure, the solder body 3 is fixed on the bottom wall of the groove.
Alternatively, the metal grid structure, the main body 1 and the plurality of solder bodies 3 are made of demagnetizing metal. For example copper or molybdenum, and the same type of demagnetizing metal.
The invention provides a manufacturing method for directly welding a metal grid structure with an atom probe analysis sample for atom probe analysis, which comprises the following steps:
s1, manufacturing a main body 1 with a preset shape by adopting pre-selected metal;
s2, removing a part of the side wall of the main body 1 to form a welding body accommodating structure 2;
s3, manufacturing a plurality of welding bodies 3 with the top surfaces being welding planes on the bottom wall of the welding body accommodating structure 2;
wherein, the welding plane can be directly welded with the analysis sample plane of the atom probe.
Optionally, in the method for manufacturing a metal gate structure, when step S1 is performed, the metal is selected to be an elimination metal.
Alternatively, in the method for manufacturing a metal gate structure, the predetermined shape is a cylinder when step S1 is performed.
Alternatively, the metal gate structure manufacturing method is further described, wherein the diameter of the cylinder is 1000-5000 μm, and the height is 1-10 mm.
Optionally, in the method for manufacturing a metal gate structure, when step S2 is performed, a recess is formed on the sidewall of the main body 1 from the top surface to the bottom surface thereof, and the recess serves as the solder receiving structure 2.
Alternatively, in the method for manufacturing a metal gate structure, when step S3 is performed, the solder body 3 is a cylinder.
Alternatively, in the manufacturing method of the metal gate structure, the diameter of the welding body 3 is 1mm-5 mm.
Alternatively, in the metal gate structure manufacturing method, when step S3 is performed, the plurality of bonding bodies 3 are arranged in a line at equal intervals.
Alternatively, in the method for manufacturing a metal gate structure, when step S3 is performed, the pitch between the solder bodies 3 is 100 μm to 500 μm.
Alternatively, in the metal gate structure manufacturing method, when step S3 is performed, the plurality of solder bodies 3 are sequentially numbered.
Alternatively, in the metal gate structure manufacturing method described further, the solder body 3 is fixed to the bottom wall of the groove.
The invention has at least the following technical effects:
1. the welding method is used for atom probe analysis, can be directly welded with an atom probe analysis sample, reduces the secondary processing and manufacturing links (secondary processing links) of the metal grid, can save the production cost and improve the atom probe analysis efficiency.
2. And the secondary processing and manufacturing links are reduced, so that the pollution caused by secondary manufacturing can be avoided, and the analysis accuracy of the atom probe is improved.
3. The metal grid specially used for welding the atom probe analysis sample is provided pioneering, the special welding body can be matched with the sample table, and the reasonable distance between the special welding bodies can prevent mutual influence during sample preparation.
Drawings
The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
fig. 1 is a schematic structural diagram of a metal gate structure according to a first embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a metal gate structure according to a second embodiment of the present invention.
FIG. 3 is a schematic view of a welded portion of the welded body and the sample according to the present invention.
Fig. 4 is a flow chart of the manufacturing method of the metal gate structure of the present invention.
Description of the reference numerals
Main body 1
Welding body containing structure 2
Welded body 3
Welding plane 3.1 of the welded body
Sample No. 4
Pin needle 5
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
As shown in fig. 1 in conjunction with fig. 3, the present invention provides a first embodiment of a metal gate structure for direct use in bonding of an atom probe analysis sample, comprising:
a main body 1, one side edge of which is formed with a welding body containing structure 2;
a plurality of welding bodies 3, it is arranged on 2 diapalls of welding body accommodation structure, and its top surface is welding plane 3.1, and this welding plane 3.1 can directly weld with atom probe analysis sample plane.
The first embodiment of the metal gate structure can be directly welded with an atom probe analysis sample for atom probe analysis, so that secondary processing and manufacturing links are reduced, the special welding bodies can be matched with the sample table, and the reasonable distance between the special welding bodies can prevent mutual influence during sample preparation.
As shown in fig. 2 in conjunction with fig. 3, the present invention provides a second embodiment of a metal gate structure for direct use in bonding of an atom probe analysis sample, comprising:
the welding body comprises a main body 1, wherein the main body 1 is a cylinder, a groove is formed in the side wall of the main body 1 from the top surface to the bottom surface, and the groove is used as a welding body accommodating structure 2;
a plurality of welding bodies 3 are linearly arranged and fixed on the bottom wall 1.1 of the groove at equal intervals, the welding bodies 3 are cylinders, each welding body 3 is provided with a serial number, a groove is formed on the side wall of the main body 1 from the top surface to the bottom surface of the main body, and the groove is used as a welding body accommodating structure 2;
wherein the diameter of the main body 1 is 1000-5000 μm, and the height is 1-10 mm. The diameter is preferably 3000 μm and the height is preferably 5 mm. The diameter of the welding body 3 is 1mm-5 mm. The diameter is preferably 3mm and the pitch between the welded bodies 3 is 100 μm to 500. mu.m. The distance is preferably 200 μm. The main body 1 and the plurality of welded bodies 3 are made of a demagnetizing metal such as copper or molybdenum.
As shown in fig. 4, the present invention provides a first embodiment of a method for fabricating a metal gate structure for atom probe analysis capable of being directly bonded to an atom probe analysis sample, comprising the steps of:
s1, manufacturing a main body 1 with a preset shape by adopting pre-selected metal;
s2, removing a part of the side wall of the main body 1 to form a welding body accommodating structure 2;
s3, manufacturing a plurality of welding bodies 3 with the top surfaces being welding planes on the bottom wall of the welding body accommodating structure 2;
wherein, the welding plane can be directly welded with the analysis sample plane of the atom probe.
The first embodiment of the metal grid structure manufacturing method is used for directly welding the atom probe analysis energy and the atom probe analysis sample, so that the secondary processing and manufacturing links are reduced, the special welding bodies can be matched with the sample table, and the reasonable distance between the special welding bodies can prevent mutual influence during sample preparation.
The invention provides a second embodiment of a method for manufacturing a metal gate structure for atom probe analysis, which can be directly welded with an atom probe analysis sample, and comprises the following steps:
s1, manufacturing a main body 1 of a cylinder by using demagnetized metal, wherein the diameter of the cylinder is 1000-5000 μm, and the height of the cylinder is 1-10 mm;
s2, a groove is formed on the side wall of the main body 1 from the top surface to the bottom surface of the main body, and the groove is used as the welding body accommodating structure 2;
s3, manufacturing a plurality of cylinders with the top surfaces being welding planes on the bottom wall of the groove as welding bodies 3, wherein the diameter of each welding body 3 is 1mm-5mm, the welding bodies 3 are linearly arranged on the bottom wall of the groove at equal intervals, the interval between the welding bodies 3 is 100 mu m-500 mu m, and each welding body 3 is provided with a number;
wherein, the welding plane 3.1 can be directly welded with the analysis sample plane of the atom probe.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.

Claims (21)

1. A metal gate structure for use in bonding atom probe analysis capable of being directly bonded to an atom probe analysis sample, comprising:
a main body (1) with a welding body containing structure (2) formed on one side edge;
a plurality of welding bodies (3), it arranges on welding body accommodation structure (2) diapire, and its top surface is the welding plane, and this welding plane can directly weld with atom probe analysis sample plane.
2. The metal gate structure of claim 1, wherein: the main body (1) is a cylinder, a groove is formed on the side wall of the main body (1) from the top surface to the bottom surface of the main body, and the groove is used as a welding body accommodating structure (2).
3. The metal gate structure of claim 2, wherein: the diameter of the main body (1) is 1000-5000 μm, and the height is 1-10 mm.
4. The metal gate structure of claim 1, wherein: the welding body (3) is a cylinder.
5. The metal gate structure of claim 4, wherein: the diameter of the welding body (3) is 1mm-5 mm.
6. The metal gate structure of claim 1, wherein: the plurality of welding bodies (3) are arranged in a straight line at equal intervals.
7. The metal gate structure of claim 1, wherein: the distance between the welding bodies (3) is 100-500 mu m.
8. The metal gate structure of claim 1, wherein: the plurality of welding bodies (3) are provided with sequence numbers.
9. The metal gate structure of claim 2, wherein: the welding body (3) is fixed on the bottom wall of the groove.
10. The metal gate structure of any of claims 1-9, wherein: the main body (1) and the plurality of welded bodies (3) are made of demagnetized metal.
11. A method for manufacturing a metal gate structure, which is used for welding atom probe analysis and can be directly welded with an atom probe analysis sample, is characterized by comprising the following steps:
s1, manufacturing a main body (1) with a preset shape by adopting a pre-selected metal;
s2, removing a part of the side wall of the main body (1) to form a welding body accommodating structure (2);
s3, manufacturing a plurality of welding bodies (3) with the top surfaces being welding planes on the bottom wall of the welding body accommodating structure (2);
wherein, the welding plane can be directly welded with the analysis sample plane of the atom probe.
12. The method of fabricating a metal gate structure of claim 11, wherein: in step S1, the metal is preselected to be a scavenging metal.
13. The method of fabricating a metal gate structure of claim 11, wherein: when step S1 is performed, the predetermined shape is a cylinder.
14. The method of fabricating a metal gate structure of claim 13, wherein: the diameter of the cylinder is 1000-5000 μm, and the height is 1-10 mm.
15. The method of fabricating a metal gate structure of claim 11, wherein: when step S2 is performed, a recess is formed on the sidewall of the main body (1) from the top surface to the bottom surface, and the recess is used as the receiving structure (2) for the solder.
16. The method of fabricating a metal gate structure of claim 11, wherein: when step S3 is performed, the welded body (3) is a cylindrical body.
17. The method of fabricating a metal gate structure of claim 16, wherein: the diameter of the welding body (3) is 1mm-5 mm.
18. The method of fabricating a metal gate structure of claim 11, wherein: when step S3 is performed, the plurality of solder bodies (3) are arranged at equal intervals in a straight line.
19. The method of fabricating a metal gate structure of claim 18, wherein: when step S3 is performed, the pitch between the solder bodies (3) is 100 μm to 500. mu.m.
20. The method of fabricating a metal gate structure of claim 19, wherein: when step S3 is executed, the plurality of welded bodies (3) are provided with sequence numbers.
21. The method of fabricating a metal gate structure of claim 15, wherein: the welding body (3) is fixed on the bottom wall of the groove.
CN201910937920.9A 2019-09-30 2019-09-30 Metal gate structure and method of fabricating the same Pending CN110672881A (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
CN201910937920.9A CN110672881A (en) 2019-09-30 2019-09-30 Metal gate structure and method of fabricating the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4068335A1 (en) * 2021-03-31 2022-10-05 FEI Company Method and system for imaging a multi-pillar sample

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US20140197311A1 (en) * 2013-01-15 2014-07-17 Fei Company Sample Carrier for an Electron Microscope
CN104979151A (en) * 2014-04-14 2015-10-14 Fei公司 High Capacity TEM Grid
CN105158516A (en) * 2015-08-20 2015-12-16 上海华力微电子有限公司 Preparation method of planar transmission electron microscope sample in integrated circuit analysis
CN105865862A (en) * 2016-03-25 2016-08-17 江苏省沙钢钢铁研究院有限公司 Making method of three-dimensional atom probe sample
US9514913B2 (en) * 2014-07-21 2016-12-06 Fei Company TEM sample mounting geometry
CN106248447A (en) * 2015-06-05 2016-12-21 弗劳恩霍夫应用研究促进协会 The method of the sample of preparation micro structure diagnosis and the sample of micro structure diagnosis
CN109307784A (en) * 2018-10-12 2019-02-05 南京理工大学 A kind of preparation method of the semiconductor needle point sample for three-dimensional atom probe detection

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120117696A1 (en) * 2010-11-09 2012-05-10 International Business Machines Corporation Integrated metallic microtip coupon structure for atom probe tomographic analysis
US20140197311A1 (en) * 2013-01-15 2014-07-17 Fei Company Sample Carrier for an Electron Microscope
CN104979151A (en) * 2014-04-14 2015-10-14 Fei公司 High Capacity TEM Grid
US20150294834A1 (en) * 2014-04-14 2015-10-15 Fei Company High Capacity TEM Grid
US9514913B2 (en) * 2014-07-21 2016-12-06 Fei Company TEM sample mounting geometry
CN106248447A (en) * 2015-06-05 2016-12-21 弗劳恩霍夫应用研究促进协会 The method of the sample of preparation micro structure diagnosis and the sample of micro structure diagnosis
CN105158516A (en) * 2015-08-20 2015-12-16 上海华力微电子有限公司 Preparation method of planar transmission electron microscope sample in integrated circuit analysis
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CN109307784A (en) * 2018-10-12 2019-02-05 南京理工大学 A kind of preparation method of the semiconductor needle point sample for three-dimensional atom probe detection

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4068335A1 (en) * 2021-03-31 2022-10-05 FEI Company Method and system for imaging a multi-pillar sample

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Application publication date: 20200110