CN110662339B - 等离子体源、用于激发等离子体的激发系统和光学监测系统 - Google Patents

等离子体源、用于激发等离子体的激发系统和光学监测系统 Download PDF

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Publication number
CN110662339B
CN110662339B CN201910160394.XA CN201910160394A CN110662339B CN 110662339 B CN110662339 B CN 110662339B CN 201910160394 A CN201910160394 A CN 201910160394A CN 110662339 B CN110662339 B CN 110662339B
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plasma
plasma source
source
radio frequency
frequency signal
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Chinese (zh)
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CN110662339A (zh
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马克·A·梅洛尼
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Verity Instruments Inc
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Verity Instruments Inc
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Priority claimed from US16/022,389 external-priority patent/US10679832B2/en
Priority claimed from US16/254,177 external-priority patent/US10923324B2/en
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Publication of CN110662339A publication Critical patent/CN110662339A/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN201910160394.XA 2018-06-28 2019-03-04 等离子体源、用于激发等离子体的激发系统和光学监测系统 Active CN110662339B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16/022,389 US10679832B2 (en) 2017-07-10 2018-06-28 Microwave plasma source
US16/022,389 2018-06-28
US16/254,177 US10923324B2 (en) 2017-07-10 2019-01-22 Microwave plasma source
US16/254,177 2019-01-22

Publications (2)

Publication Number Publication Date
CN110662339A CN110662339A (zh) 2020-01-07
CN110662339B true CN110662339B (zh) 2022-07-01

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Country Status (4)

Country Link
JP (1) JP6739566B2 (ko)
KR (1) KR102159932B1 (ko)
CN (1) CN110662339B (ko)
TW (1) TWI721373B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11362404B2 (en) * 2020-10-30 2022-06-14 Applied Materials, Inc. Microwave window including first and second plates with vertical stepped areas configured for pressure sealing a dielectric plate between the first and second plates
US11956885B2 (en) * 2021-08-19 2024-04-09 Mks Instruments, Inc. Method and apparatus for impedance matching in a power delivery system for remote plasma generation
CN116666178B (zh) * 2023-07-26 2023-10-03 离享未来(德州)等离子科技有限公司 一种等离子粉末处理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906900A (en) * 1989-04-03 1990-03-06 Board Of Trustees Operating Michigan State University Coaxial cavity type, radiofrequency wave, plasma generating apparatus
KR20040010898A (ko) * 2002-07-25 2004-02-05 사단법인 고등기술연구원 연구조합 대기압 마이크로 웨이브 플라즈마 방전시스템의 점화장치
WO2013162644A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Capacitively coupled plasma source with rf coupled grounded electrode
CN109243956B (zh) * 2017-07-10 2021-03-26 真实仪器公司 等离子体源、激发系统和操作激发测量系统的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970028874A (ko) * 1995-11-01 1997-06-24 이종학 유도결합형 플라즈마 화학증착 및 그 제어방법
US6791692B2 (en) * 2000-11-29 2004-09-14 Lightwind Corporation Method and device utilizing plasma source for real-time gas sampling
KR20080101968A (ko) * 2007-05-17 2008-11-24 삼성전자주식회사 반도체 제조 공정에 사용되는 가스 모니터링 장치
KR20110020702A (ko) * 2009-08-24 2011-03-03 한국기초과학지원연구원 균일한 대면적 마이크로웨이브 플라즈마 발생원을 위한 영구자석 장착형 안테나
JP2013077441A (ja) * 2011-09-30 2013-04-25 Tokyo Electron Ltd マイクロ波放射機構、表面波プラズマ源および表面波プラズマ処理装置
JP5848982B2 (ja) * 2012-02-17 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマのモニタリング方法
TWI717610B (zh) * 2013-08-16 2021-02-01 美商應用材料股份有限公司 用於高溫低壓環境中的延長的電容性耦合的電漿源
JP6478748B2 (ja) * 2015-03-24 2019-03-06 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906900A (en) * 1989-04-03 1990-03-06 Board Of Trustees Operating Michigan State University Coaxial cavity type, radiofrequency wave, plasma generating apparatus
KR20040010898A (ko) * 2002-07-25 2004-02-05 사단법인 고등기술연구원 연구조합 대기압 마이크로 웨이브 플라즈마 방전시스템의 점화장치
WO2013162644A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Capacitively coupled plasma source with rf coupled grounded electrode
CN109243956B (zh) * 2017-07-10 2021-03-26 真实仪器公司 等离子体源、激发系统和操作激发测量系统的方法

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Publication number Publication date
JP6739566B2 (ja) 2020-08-12
KR102159932B1 (ko) 2020-09-29
KR20200001970A (ko) 2020-01-07
JP2020004701A (ja) 2020-01-09
TW202002723A (zh) 2020-01-01
CN110662339A (zh) 2020-01-07
TWI721373B (zh) 2021-03-11

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