CN110634854A - Intelligent power module, manufacturing equipment and method of intelligent power module - Google Patents
Intelligent power module, manufacturing equipment and method of intelligent power module Download PDFInfo
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- CN110634854A CN110634854A CN201910957324.7A CN201910957324A CN110634854A CN 110634854 A CN110634854 A CN 110634854A CN 201910957324 A CN201910957324 A CN 201910957324A CN 110634854 A CN110634854 A CN 110634854A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
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Abstract
The invention discloses an intelligent power module, and a manufacturing device and a method of the intelligent power module, wherein the intelligent power module comprises: the circuit wiring layer comprises a first mounting position, a second mounting position and a third mounting position; the inverter power module is arranged on a first installation position of the installation substrate; the PFC power module comprises a radiating fin, a PFC power switch tube and a PFC diode, the radiating fin is arranged on the second mounting position, and the PFC power switch tube and the PFC diode are attached to the radiating fin; and the driving chip is arranged on the third installation position and is respectively and electrically connected with the inverter power module and the PFC power module. The invention solves the problem that the heat dissipation of a high-power device is not timely in the small-space high-integration design of the intelligent power module.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to an intelligent power module, and manufacturing equipment and a manufacturing method of the intelligent power module.
Background
Intelligent Power Module (IPM) is a Power-driven product that combines Power electronics and integrated circuit technology. The intelligent power module integrates a power switch device and a high-voltage driving circuit and is internally provided with fault detection circuits such as overvoltage, overcurrent and overheat. The intelligent power module has large working current and high temperature, the internal temperature of the intelligent power module can be increased in a high-temperature state, and if the intelligent power module does not dissipate heat in time, devices integrated in the intelligent power module are easy to damage.
Disclosure of Invention
The invention mainly aims to provide an intelligent power module, and manufacturing equipment and a manufacturing method of the intelligent power module, and aims to solve the problems that the intelligent power module is small in space and high in integration, high-power heat dissipation is not timely, or the heat dissipation effect is poor.
In order to achieve the above object, the present invention provides an intelligent power module, including:
the circuit wiring layer comprises a first mounting position, a second mounting position and a third mounting position;
the inverter power module is arranged on a first installation position of the installation substrate;
the PFC power module comprises a radiating fin, a PFC power switch tube and a PFC diode, the radiating fin is arranged on the second mounting position, and the PFC power switch tube and the PFC diode are attached to the radiating fin;
and the driving chip is arranged on the third installation position and is electrically connected with the inverter power module and the PFC power module respectively.
Optionally, the PFC power switch tube is an IGBT;
the PFC power module also comprises a fast recovery diode, and the fast recovery diode is arranged and attached to the heat sink;
the fast recovery diode and the IGBT are connected in anti-parallel.
Optionally, the heat sink includes a copper substrate and a silver plating layer coated on the surface of the copper substrate.
Optionally, the thickness of the heat sink is positively correlated with the magnitude of the current flowing through the PFC power module;
and/or the size of the heat sink is positively correlated with the magnitude of the current flowing through the PFC power module.
Optionally, the heat dissipation fins include a first heat dissipation fin and a second heat dissipation fin, the PFC power switching tube is disposed on the first heat dissipation fin, and the PFC diode is disposed on the second heat dissipation fin.
Optionally, the heat sink is further coated with a welding material, and the welding material is used for eutectic welding with the PFC power switching tube and the PFC diode tube.
Optionally, the intelligent power module further includes a package housing, and the inverter power module, the driver chip, the PFC power module, and the mounting substrate are packaged in the package housing.
The invention also provides a manufacturing method of the intelligent power module, which comprises the following steps:
preparing a heat radiating fin and a PFC power module wafer, wherein the PFC power module wafer comprises a PFC power switch chip and a PFC diode chip;
placing the radiating fin on a chip carrier, and drawing tin on the surface of one side of the radiating fin by using a soldering tin wire;
placing the PFC power module wafer on a target position on the surface of the heat radiating fin;
and pressing and die bonding the PFC power module wafer and the heat sink.
Optionally, the manufacturing method of the intelligent power module further includes the following steps:
obtaining a wafer image of the PFC power module after lamination and die bonding;
and marking the heat radiating fin and the PFC power module wafer when the PFC power module wafer is detected to have poor welding.
The invention also provides a manufacturing device of the intelligent power module, which comprises:
the chip carrier is used for placing the radiating fins;
the manipulator is used for carrying the PFC power module wafer onto the heat dissipation sheet;
the image acquisition device is used for acquiring an image of the PFC power module wafer;
the main controller is respectively electrically connected with the manipulator and the image acquisition device and is used for determining the position relation between the PFC power module wafer and the heat dissipation sheet according to the image of the motion platform acquired by the image acquisition device; and placing the PFC power module wafer to the target position of the heat radiating fin according to the position relation.
Optionally, the manufacturing apparatus of the smart power module further includes:
the guide rail is used for placing the chip carrier and transporting the radiating fin to a preset position when the radiating fin is placed on the chip carrier;
and the stopper is arranged corresponding to the position of the image acquisition device and used for limiting the guide rail.
According to the intelligent power module, the radiating fin is attached between the PFC power module and the circuit wiring layer, the PFC power switching tube and the PFC diode of the PFC power module are attached to the radiating fin through processes such as eutectic welding, the welding firmness of the radiating fin and the PFC power module is improved, and the problem that a solder hole is generated in the welding process or the use thermal cycle process is solved. Therefore, in the process that the driving chip drives the PFC power module to work, heat generated by the PFC power module is quickly diffused through the radiating fin, so that the heat is uniformly distributed on the radiating fin before flowing into the insulating layer. When the part of heat is longitudinally conducted to the radiating fins, the point-like heat source is rapidly changed into a surface heat source form based on the ultrahigh transverse heat conduction capability of the radiating fins, and the heat source is rapidly conducted to the mounting substrate and then conducted out of the intelligent power module through the mounting substrate. The invention can quickly dissipate the heat of the PFC power module by the quick heat conduction effect of the heat dissipation sheet, thereby solving the problems that the heat dissipation of a high-power device is not timely or the heat dissipation effect of the intelligent power module is poor in the design of small space and high integration of the intelligent power module.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of an intelligent power module according to the present invention;
FIG. 2 is a schematic flow chart illustrating a method for manufacturing an intelligent power module according to an embodiment of the present invention;
fig. 3 is a detailed flowchart of one embodiment of step S300 in the manufacturing method of the intelligent power module according to the present invention;
FIG. 4 is a schematic flow chart illustrating a method for manufacturing an intelligent power module according to another embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an embodiment of an apparatus for manufacturing an intelligent power module according to the present invention;
fig. 6 is a schematic structural diagram of another embodiment of an apparatus for manufacturing an intelligent power module according to the present invention.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 10 | |
100 | Chip carrier |
| 20 | |
200 | |
| 30 | |
300 | Image acquisition device |
| 40 | |
400 | |
| 31 | |
500 | |
| 32 | PFC |
600 | |
| 33 | PFC diode |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides an intelligent power module.
An intelligent Power module, i.e., ipm (intelligent Power module), is a Power driving product combining Power electronics and integrated circuit technology. The intelligent power module can be used for driving a compressor or a fan, and of course, in other embodiments, the intelligent power module can also be applied to a frequency converter and the like. In the intelligent power module, the inverter power module 20 and the driving chip 40 for driving the inverter power module 20 to operate may be integrated, and the MCU or the like for controlling the driving chip 40 to operate may be integrated in the intelligent power module.
It can be understood that the intelligent power module of the present embodiment is further integrated with the PFC power module 30, that is, the compressor inverter power module 20 and the PFC power module 30 are integrated into a whole to form a two-in-one compressor intelligent power module. Or, the fan inverter power module 20 and the PFC power module 30 are integrated into a whole to form a two-in-one fan intelligent power module. In other embodiments, the PFC power module 30, the compressor inverter power module 20, and the fan inverter power module 20 may be integrated into a whole to form a highly integrated intelligent power module.
When the intelligent power module works, the power switch tube integrated in the intelligent power module, especially the heat generation of the PFC power module 30 is more serious, however, the intelligent power module also needs to be packaged or encapsulated by EMC plastic package material, because the thermal resistance of the plastic package material is very large, the heat is not beneficial to outward expansion, the module can cause the power switch tube to generate heat too much and be damaged under long-term work, especially in the arranged intelligent power module, the temperature cleanness of the main control chip and the driving chip 40 is lower, the heat generated by the PFC power module 30 can be conducted to the non-power switch tubes such as the MCU and the driving chip 40 through the mounting substrate 10, so that the power switch tube, the MCU and the power switch tube almost reach the same temperature. Therefore, the MCU is over-high in working temperature and breaks down, the phenomenon of control signal disorder and the like occurs, and the intelligent power module can be burnt in serious conditions.
In order to improve the heat dissipation performance of the PFC power module 30 in the smart power module, the thickness of the surface package casing below the smart power module is usually reduced, but the thinner package casing has high requirements on the process, which results in a large increase in the reject ratio of the smart power module, and further results in a high cost of the smart power module; or, a high-thermal-conductivity packaging material is adopted, however, the manufacturing process of the high-thermal-conductivity insulating material is complex, the price is high, and the cost of the intelligent power module is also increased.
In order to solve the above problem, referring to fig. 1, in an embodiment of the present invention, the smart power module includes:
the mounting structure comprises a mounting substrate 10, wherein a circuit wiring layer 13 is arranged on one side surface of the mounting substrate 10, and the circuit wiring layer 13 comprises a first mounting position, a second mounting position and a third mounting position;
an inverter power module 20 mounted on the first mounting position of the mounting substrate 10;
the PFC power module 30 includes a heat sink 31, a PFC power switching tube 32, and a PFC diode 33, the heat sink 31 is disposed on the second mounting location, and the PFC power switching tube 32 and the PFC diode 33 are attached to the heat sink 31;
and the driving chip 40 is mounted on the third mounting position, and the driving chip 40 is electrically connected with the inverter power module 20 and the PFC power module 30, respectively.
In this embodiment, the mounting substrate 10 may be implemented by any one of an aluminum substrate, an aluminum alloy substrate, a copper substrate, and a copper alloy substrate. The mounting substrate 10 is a mounting carrier for the power switch and the driving device, and the shape of the mounting substrate 10 may be determined according to the specific position, number and size of the power switch, and may be a square, but is not limited to a square. The mounting substrate 10 is provided with a circuit wiring layer 13, and the circuit wiring layer 13 forms corresponding lines and mounting positions, i.e. pads, for mounting each electronic component in the power switch tube on the mounting substrate 10 according to the circuit design of the intelligent power module.
When the mounting substrate 10 is realized using the aluminum nitride ceramic mounting substrate 10, the aluminum nitride ceramic mounting substrate 10 includes an insulating heat dissipation layer and a circuit wiring layer 13 formed on the insulating heat dissipation layer. In the case of the mounting substrate 10 made of a metal material, the mounting substrate 10 includes a heat dissipation layer 11, an insulating layer 12 laid on the heat dissipation layer 11, and a circuit wiring layer 13 formed on the insulating layer 12. In the present embodiment, the mounting substrate 10 may be selected as a single-sided wiring board. The insulating layer 12 is interposed between the circuit wiring layer 13 and the metal mounting board 10. The insulating layer 12 is used to realize electrical isolation and electromagnetic shielding between the circuit wiring layer 13 and the metal mounting substrate 10, and to reflect external electromagnetic interference, thereby preventing external electromagnetic radiation from interfering with normal operation of the power switch, and reducing the interference influence of electromagnetic radiation in the surrounding environment on electronic components in the intelligent power module. The insulating layer 12 is made of a thermoplastic adhesive or a thermosetting adhesive, so as to achieve the fixed connection and insulation between the mounting substrate 10 and the circuit wiring layer 13. The insulating layer 12 may be implemented by using a high thermal conductivity insulating layer 12 implemented by mixing one or more materials of epoxy resin, alumina, and high thermal conductivity filling material. In the process of manufacturing the mounting substrate 10, after the insulating layer 12 is provided on the mounting substrate 10, a copper foil may be laid on the insulating layer 12 and etched in accordance with a predetermined circuit design, thereby forming the circuit wiring layer 13.
The inverter power module 20 is provided with a plurality of power switching tubes, and the power switching tubes may be gallium nitride (GaN) power switching tubes, Si-based power switching tubes, or SiC-based power switching tubes. In practical application, the number of the power switch tubes can be four, or a multiple of four, or six, or a multiple of six, the six power switch tubes form an inverter circuit, and the inverter circuit is applied to electrical equipment such as an inverter power supply, a frequency converter, refrigeration equipment, metallurgical mechanical equipment, electric traction equipment and the like, and particularly applied to frequency conversion household appliances to drive loads such as a compressor, a fan and the like to work. When the intelligent power module works, the driving chip 40 outputs a corresponding PWM control signal to drive and control the corresponding power switching tube to be turned on/off, thereby outputting driving power to drive the motor and other loads to work.
The driving chips 40 are correspondingly disposed on the third mounting position, the number of the driving chips 40 may be one, for example, the HVIC driving chip 40, and the driving chip 40 is an integrated chip, in which four, six or seven driving circuits for driving the power switching tubes are integrated, and the integrated configuration may be specifically performed according to the number of the driven power switching tubes. The number of the driving chips 40 may also correspond to the number of the power switch tubes, that is, each driving chip 40 drives one power switch tube to operate. When the intelligent power module works, the driving chip 40 outputs a corresponding control signal to control the conduction of the power switching tubes in the PFC power module 30 and the inverter power module 20, so as to output driving electric energy to drive the load such as the motor to work. In this process, heat generated by the PFC power switch 32 is conducted to the mounting substrate 10 through the heat sink 31 to be dissipated through the heat sink 31 and the mounting substrate 10.
The circuit wiring layer 13 is divided into a plurality of mounting positions, the inverter power module 20 is disposed in the first mounting position, the heat sink 31 is disposed in the second mounting position, and the driver chip 40 is mounted in the third mounting position. The power switching tube and the driving chip 40 in the inverter power module 20 may be a patch-type electronic component, or may be a bare die wafer. The circuit wiring layer 13 includes circuit wirings forming a current loop, and pads formed from the circuit wirings, the driving chip 40 and the power switching tubes in the inverter power module 20 are disposed on the corresponding pads, and the driving chip 40 and the power switching tubes may be electrically connected by the circuit wirings, metal binding wires, and the like.
In an embodiment, the heat sink 31 is further coated with a solder material for eutectic soldering with the PFC power switch tube 32 and the PFC diode 33.
The PFC power switch tube 32 and the PFC diode 33 in the PFC power module 30 may be implemented by selecting wafers, a fixing position for fixing the PFC power switch tube 32 and the PFC diode 33 is provided on the heat dissipation sheet 31, and the heat dissipation sheet 31 is further coated with soldering materials such as solder, gold-tin solder paste, tin, gold-germanium, gold-silicon, and the like, so that the PFC power switch tube 32 and the PFC diode 33 are eutectic by using eutectic equipment when the PFC power switch tube 32 and the PFC diode 33 are molten at a high temperature under the high-temperature condition of eutectic soldering, thereby fixing the PFC power switch tube 32 and the PFC diode 33 on the heat dissipation sheet 31. In this embodiment, the heat sink 31 may be implemented by using an electrically conductive material with high thermal conductivity, for example, a metal material with high thermal conductivity, and the orthographic projections of the PFC power switch tube 32 and the PFC diode 33 on the heat sink 31 are located inside the edge of the heat sink 31. That is, the adhering surfaces formed by the lower surfaces of the PFC power switch tube 32 and the PFC diode 33 are smaller than the area of the upper surface of the heat sink 31, when the PFC power switch tube 32 and the PFC diode 33 are adhered to the heat sink 31, the rest of the upper surface of the heat sink 31 forms a heat dissipation area, and since the area of the heat dissipation area is larger than the area of the adhering surfaces of the PFC power switch tube 32 and the PFC diode 33, the area of the upper surface of the heat sink 31 is larger than the area of the lower surfaces of the PFC power switch tube 32 and the PFC diode. Due to the arrangement, the heat flux density of the heat can be greatly reduced when the heat is diffused from the PFC power switch tube 32 and the PFC diode 33 to the radiating fin 31, so that the lower surfaces of the PFC power switch tube 32 and the PFC diode 33 are prevented from being too high in temperature, and the thermal reliability of the intelligent power module can be improved.
The intelligent power module provided by the invention is characterized in that the heat radiating fin 31 is attached between the PFC power module 30 and the circuit wiring layer 13, the PFC power switch tube 32 and the PFC diode 33 of the PFC power module 30 are attached on the heat radiating fin 31 through processes such as eutectic welding, which is beneficial to improving the welding firmness of the heat radiating fin 31 and the PFC power module 30 so as to reduce the problem of solder holes generated in the welding process or the heat circulation process, therefore, in the process that the driving chip 40 drives the PFC power module 30 to work, the heat generated by the PFC power module 30 is rapidly diffused through the heat radiating fin 31, so that the heat is uniformly distributed on the heat radiating fin 31 before flowing into the insulating layer 12, when the part of heat is longitudinally conducted to the heat radiating fin 31, the point heat source is rapidly changed into a surface heat source form based on the ultrahigh transverse heat conducting capacity of the heat radiating fin 31, and the heat source is rapidly conducted to, and then conducted out of the smart power module through the mounting substrate 10. The rapid heat dissipation of the PFC power module 30 is realized by the rapid heat conduction effect of the heat dissipation fins 31, so that the problems that the heat dissipation of a high-power device is not timely in the small-space high-integration design of the intelligent power module, or the heat dissipation effect of the intelligent power module is poor can be solved.
Referring to fig. 1, in an embodiment, the PFC power switch 32 is an IGBT;
the PFC power module 30 further includes a fast recovery diode, and the fast recovery diode is attached to the heat sink 31;
the fast recovery diode and the IGBT are connected in anti-parallel.
In this embodiment, the fast recovery diode is a high-power anti-parallel diode, and is used to realize fast turn-off of the PFC power switch tube 32. The fast recovery diode is provided on the heat sink 31, and heat generated during operation thereof is dissipated through the heat sink 31 and the mounting substrate 10. Wherein, when setting up to SiC MOSFET or SiC IGBT, perhaps GaN HEMT device based on PFC power switch 32, reducing the switching loss of intelligent power module to lower, and then be favorable to practicing thrift the electric energy, reduce the condition that the module generates heat, the fast recovery diode can select to adopt the fast recovery diode or the schottky diode that the Si material was made to realize, can guarantee that the consumption of intelligent power module self is lower simultaneously, reduces the manufacturing cost of intelligent power module.
In some embodiments, the PFC power switch 32 may also be implemented by a reverse conducting IGBT, and the reverse conducting IGBT integrates the fast recovery diode FRD packaged with the IGBT in an anti-parallel manner on the same chip, so as to reduce the size of the inverter bridge circuit. So set up, be favorable to improving power density, reduce high integrated intelligent power module's volume, manufacturing cost and encapsulation process, still be favorable to improving high integrated intelligent power module's reliability simultaneously.
Referring to fig. 1, in an embodiment, the heat sink 31 includes a copper substrate and a silver plating layer coated on the surface of the copper substrate.
In this embodiment, the heat sink 31 may be implemented by using a copper base or an aluminum base, and the surface of the copper base is plated with a silver layer, so as to increase the contact area between the PFC power switch tube 32 and the heat sink 31, and increase the mounting surface between the heat sink 31 and the circuit wiring layer 13, so that the heat sink 31 is better attached to the PFC power switch tube 32 and the circuit wiring layer 13, which is beneficial to improving the welding firmness between the heat sink 31 and the mounting base 10, the PFC power switch tube 32 and the solder, and reducing the occurrence of solder voids during the welding process or during the thermal cycle. In other embodiments, however, a gold foil may be plated on the copper substrate, and then the silicon wafer is bonded to the heat sink 31 and pressed together to form an alloy at a temperature far below the respective melting point in a weight ratio, thereby completing the au-si eutectic bonding.
Referring to fig. 1, in an embodiment, the thickness of the heat sink 31 is positively correlated to the magnitude of the current flowing through the PFC power module 30;
and/or, the size of the heat sink 31 is positively correlated with the magnitude of the current flowing through the PFC power module 30.
It can be understood that, considering that the larger the current of the PFC power module 30 is, the more the PFC power switch 32 and the PFC diode 33 in the PFC power module 30 generate heat, in order to maintain good heat dissipation of the power device under the high-current working condition, in this embodiment, the thickness of the heat sink 31 is proportional to the working current of the smart power module. As such, when the operating currents of the PFC power switching tube 32 and the PFC diode 33 are high, the thickness of the heat sink 31 is thick, and the amount of heat that can be absorbed and transferred is also large, thereby ensuring a good heat dissipation effect of the heat sink 31.
In addition, in order to make the heat dissipation area have a large enough area, so as to improve the heat dissipation effect of the PFC power switch tube 32 and the PFC diode 33, in this embodiment, under the condition that the smart power module is not increased, the area of the heat dissipation plate 31 is in positive correlation with the current magnitude of the PFC power module 30, and the area of the heat dissipation plate 31 is larger than the areas of the PFC power switch tube 32 and the PFC diode 33, so that the heat of the PFC power switch tube 32 and the PFC diode 33 can be diffused outwards at a fast rate. Thus, when the operating current of the power module is high, the area of the heat sink 31 is large, and the amount of heat that can be absorbed and transferred is also large, so that a good heat dissipation effect of the heat sink 31 can be ensured.
Referring to fig. 1, in an embodiment, the heat sink 31 includes a first heat sink 31 and a second heat sink 31, the PFC power switch 32 is disposed on the first heat sink 31, and the PFC diode 33 is disposed on the second heat sink 31.
In this embodiment, the PFC power switch 32 and the PFC diode 33 are respectively disposed on the two heat dissipation fins 31, so that heat generated by the two chips is respectively dissipated outwards through the two heat dissipation fins 31, which can further increase the heat dissipation area of the PFC power module 30, and each power device can be mounted on the respective heat dissipation fin 31 to dissipate heat through the respective heat dissipation fin 31.
Referring to fig. 1, in an embodiment, the smart power module further includes a package housing 50, and the inverter power module 20, the driving chip 40 and the mounting substrate 10 are packaged in the package housing 50.
In this embodiment, the package housing 50 may be made of epoxy resin, aluminum oxide, and a heat conductive filling material, wherein the heat conductive filling material may be boron nitride or aluminum nitride, and the insulation property of aluminum nitride and boron nitride is better, and the heat conductivity is higher, and the heat resistance and the heat conductivity are better, so that the aluminum nitride and the boron nitride have higher heat transfer capability. When the package case 50 is manufactured, materials such as epoxy resin, aluminum oxide, boron nitride or aluminum nitride can be mixed, and then the mixed package material is heated; after cooling, the encapsulating material is crushed, and then the material of the package housing 50 is roll-formed by an ingot molding process to form the package housing 50, and then the chip and the mounting substrate 10 are packaged in the package housing 50. Or the mounting substrate 10 with the chip mounted thereon is placed in a mold through an injection molding process and a packaging mold, and then a packaging material is injected into the mold to package the chip and the mounting substrate 10 in the package housing 50, so as to form the package housing 50 after molding. Therefore, the chip can be subjected to insulation treatment, and the EMI performance of the intelligent power module can be improved.
The invention also provides a manufacturing method of the intelligent power module,
referring to fig. 2, the method for manufacturing the smart power module includes the following steps:
step S100, preparing a heat radiating fin and a PFC power module wafer, wherein the PFC power module wafer comprises a PFC power switch chip and a PFC diode chip;
in this embodiment, the heat sink may be implemented by using a copper base or an aluminum base, and the surface of the copper base is plated with a silver layer to increase the contact area between the PFC power switch tube and the heat sink, and to increase the mounting surface of the heat sink 30 and the circuit wiring layer, so that the heat sink is better attached to the PFC power switch tube and the circuit wiring layer; the PFC power switch chip and the PFC diode chip are integrated in the intelligent power module, and form a PFC circuit with the PFC inductor, the PFC circuit may be a boost PFC circuit, a buck PFC circuit, or a boost PFC circuit, and this embodiment may be a boost PFC circuit.
S200, placing the radiating fin on a chip carrier, and drawing tin on the surface of one side of the radiating fin by using a soldering tin wire;
in this embodiment, the heat sink may be placed on the chip carrier by a robot device. The heat sink is transported to a corresponding position by a vehicle such as a rail, and then solder is drawn on the heat sink by using a solder wire. Here, the two surfaces of the heat sink may be painted with tin, respectively, or painted with tin on the side where the chip is fixed.
Step S300, placing the PFC power module wafer on a target position on the surface of the heat radiating fin;
in this embodiment, after the heat sink is subjected to tin drawing, the PFC power switch wafer and the PFC diode chip wafer may be placed on the heat sink after tin drawing by the manipulator device, in this process, the PFC power switch wafer and the PFC diode chip wafer may be photographed by the image acquisition device, positions of the PFC power switch wafer and the PFC diode chip wafer may be detected according to a chip image obtained by photographing, a positional relationship between the wafer and the heat sink may be obtained by calculating a distance between the wafer and the heat sink according to the position of the wafer, and an experience may be placed at a preset target position according to the positional relationship.
And S400, laminating and die bonding the PFC power switch tube, the PFC diode chip and the heat radiating fin.
In this embodiment, the intelligent power module is provided with a heat sink attached between the PFC power module wafer and the circuit wiring layer, and the PFC power switching tube and the PFC diode in the PFC power module wafer are attached to the heat sink by eutectic soldering or other processes, which is beneficial to improving the soldering firmness between the heat sink and the PFC power module wafer, to reduce the occurrence of problems with solder voiding during soldering or during use of thermal cycling, therefore, in the process that the driving chip drives the PFC power module to work, the heat generated by the PFC power module is quickly diffused through the radiating fin, so that heat is uniformly distributed over the heat sink before it flows into the insulating layer, and when this portion of heat is conducted longitudinally to the heat sink, based on the ultrahigh transverse heat conduction capability of the radiating fins, the point-shaped heat source is rapidly changed into a surface heat source form, and the heat source is rapidly conducted to the mounting substrate and then conducted out of the intelligent power module through the mounting substrate. Through the quick heat conduction effect of the radiating fins, the problems that the intelligent power module is small in space and high in integration, high-power heat dissipation is not timely, or the heat dissipation effect is poor can be solved.
Referring to fig. 3, in an embodiment, the step of placing the PFC power module wafer on the pre-installation position of the heat sink surface specifically includes:
step S310, obtaining an image of the PFC power module wafer;
step S320, determining the position relation between the PFC power module wafer and the heat radiating fin according to the image;
and S330, placing the PFC power module wafer to the target position according to the acquired position relation.
In this embodiment, the motion platform includes a guide rail, the chip carrier is movable on the guide rail, the stopper is mounted on the guide rail according to a set position, the image of the motion platform is acquired by the image acquisition device, specifically, the heat sink is photographed when the carrier on which the heat sink is mounted moves to the stopper and stops, however, when the manipulator carries the wafer and is close to the heat sink, the wafer image of the chip is photographed, so as to obtain a position relationship between the PFC power module wafer and the heat sink, and then the manipulator is controlled according to the position relationship to place the PFC power module wafer at a target position on the heat sink.
Wherein the step of determining the positional relationship between the PFC power module wafer and the heat sink according to the image comprises:
preprocessing the acquired image of the PFC power module wafer;
obtaining an edge image from the preprocessed image by using an edge detection algorithm;
extracting invariant moment features from the edge image;
obtaining the three-dimensional coordinates of the wafer by adopting a classification algorithm according to the invariant moment characteristics;
and establishing a Jacobian matrix model according to the three-dimensional coordinates of the wafer, and obtaining the position relation between the PFC power module wafer on the motion platform and the target position under joint space coordinates.
Referring to fig. 4, further, after the PFC power module wafer is placed at the target position, the method for manufacturing the smart power module further includes:
s500, obtaining a wafer image of the PFC power module after lamination and die bonding;
step S600, when the PFC power module wafer is detected to have poor welding, marking the heat radiating fin and the PFC power module wafer.
In this embodiment, the image of the PFC power module wafer is collected, the solder joints between the PFC power module wafer and the heat sink are tested and compared with the qualified parameters in the database to check whether the defects such as the cold solder joint, the wafer drift and the like exist, and the defects are marked through a display or an automatic mark, so that the repair personnel can repair the defects.
The present invention also provides a manufacturing apparatus of an intelligent power module, and referring to fig. 5, the manufacturing apparatus of the intelligent power module includes:
a chip carrier 100 for placing a heat sink;
the manipulator 200 is used for carrying the PFC power module wafer onto the heat sink;
an image obtaining device 300, configured to obtain an image of the PFC power module wafer;
the main controller 400 is electrically connected to the manipulator 200 and the image acquisition device 300, respectively, and the main controller 400 is configured to determine a position relationship between the PFC power module wafer and the heat sink according to the image of the motion platform acquired by the image acquisition device 300; and placing the PFC power module wafer to the target position of the heat radiating fin according to the position relation. The manufacturing equipment of the intelligent power module further comprises:
a guide rail 500 for placing the chip carrier 100 and transporting the heat sink to a predetermined position when the heat sink is placed on the chip carrier 100;
and the stopper 600 is arranged corresponding to the position of the image acquisition device 300, and the stopper 600 is used for limiting the guide rail 500.
In this embodiment, the stopper 600 may be disposed below the image capturing device 300, and when the chip carrier 100 on the guide rail 500 is loaded with the heat sink, the guide rail 500 transports the chip carrier 100 to the stopper 600, that is, transports the heat sink to a predetermined position, so as to draw tin on the heat sink by the tin drawing tool. Before the chip wafer is placed on the heat sink, the position relationship between the wafer and the heat sink can be obtained by the image obtaining device 300, and then the position relationship between the wafer and the target position of the wafer on the heat sink can be determined, so that the main controller 400 controls the manipulator 200 to carry the chip wafer to move to the target position according to the obtained position relationship, and the accuracy of wafer installation can be ensured.
It can be understood that the manufacturing equipment of the intelligent power module further comprises a heating module, so that after the solder wires are heated to 350 +/-10 ℃, the solder wires are uniformly drawn on the copper heat dissipation sheet with silver plated on the surface, and then the chip wafer is pressed on the heat dissipation sheet, and the chip is welded to the heat dissipation sheet. After the die attach of the chip wafer is completed, the heat sink and other electronic components of the smart power module, such as the wafers of the power device, the driving chip and other devices, may be attached to the corresponding mounting positions, specifically: firstly, thinning the wafer to reduce the on-resistance and reduce the power consumption; and scribing the power chip, and bonding the chip on the mounting substrate, wherein in the process, a chip mounter can be adopted to realize chip mounting, and the chip mounting process can also be realized through a die bonding process.
Referring to fig. 6, in an embodiment, the fabrication apparatus of the smart power module may further include an Automatic Optical Inspection (AOI) system that implements AOI, so that after the fabrication of the mounting substrate patch is completed, the smart power module is subjected to welding defect detection based on an optical principle through the AOI detection system. The AOI system comprises a guide rail 500, a carrier which is suitable for moving on the guide rail 500 and is used for placing a mounting substrate, a stopper 600 which is arranged on the guide rail 500 according to a set position, an image acquisition device 300 which is arranged right above the guide rail 500 and is suitable for photographing an air conditioner chip placed on the mounting substrate carrier, and a manipulator 200 device and an image acquisition device 300 which are arranged right above the guide rail 500, wherein the image acquisition device 300 and the manipulator 200 device are connected with the image acquisition device 300, the image acquisition device 300 is used for photographing the air conditioner chip when the carrier which is placed with the mounting substrate moves to the stopper 600 and stops, and sending a photographed chip image to the image acquisition device 300, the image acquisition device 300 is suitable for detecting the chip image to judge whether the chip on the mounting substrate carrier is well welded or not and identifying the chip through the manipulator 200 device when judging that the chip with poor welding exists, and removing it from the mounting substrate carrier.
It is understood that in another embodiment, the AOI system further includes a fixture base 101, a stop bar 102, a detector body 103, a fixture 104, a conveyor 105, a detection table 106, a fixture clamp 107, an uptake device 108, a moving rail 109, a display module 110, and the like. Two gag lever posts set up respectively in unable adjustment base 101's both ends, detector main part 103 then sets up on unable adjustment base 101, the surface of detector main part 103 is provided with the vent, and the top of detector main part 103 is connected with mount 104, the inboard of mount is provided with conveyer 105, and conveyer 105's top is fixed with detects platform 106, conveyer 7 is connected with detecting platform 106 through the buckle, the both sides of detecting platform 106 are provided with fixation clamp 107, it sets up in the top of fixation clamp to intake device 108, the fixation clamp is telescoping device, the movable guide is used for driving intake device 108 and removes. Before realizing AOI and detecting, can place the mounting substrate to examining test table 106 inboard through manipulator 200, it examines test table 106 inboard and is the recess column structure, can avoid components and parts to fall the detector outside in the testing process. The stability of detector main part 103 can be guaranteed in the fixed of gag lever post 102 in the use, prevents that the detector from producing in the testing process and rocking, and its test table 106 can convey along with conveyer 105 for the mounting substrate that awaits measuring can arrange by the automation.
In the detection process, the pickup device 108 moves through the movable guide rail, detects the welding point, and outputs the detection result to the control module of the AOI detection system, so as to complete the automatic detection of the mounting substrate. In the embodiment, the image is acquired, the test welding spots are compared with qualified parameters in the database, the defects on the mounting substrate are detected through image processing, and the defects are marked through a display or an automatic mark for repair by maintenance personnel.
The invention also provides an air conditioner which comprises the intelligent power module. The detailed structure of the intelligent power module can refer to the above embodiments, and is not described herein again; it can be understood that, because the intelligent power module is used in the air conditioner of the present invention, the embodiment of the air conditioner of the present invention includes all technical solutions of all embodiments of the intelligent power module, and the achieved technical effects are also completely the same, and are not described herein again.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A smart power module, comprising:
the circuit wiring layer comprises a first mounting position, a second mounting position and a third mounting position;
the inverter power module is arranged on a first installation position of the installation substrate;
the PFC power module comprises a radiating fin, a PFC power switch tube and a PFC diode, the radiating fin is arranged on the second mounting position, and the PFC power switch tube and the PFC diode are attached to the radiating fin;
and the driving chip is arranged on the third installation position and is electrically connected with the inverter power module and the PFC power module respectively.
2. The smart power module of claim 1 wherein the PFC power switch is an IGBT;
the PFC power module also comprises a fast recovery diode, and the fast recovery diode is arranged and attached to the heat sink;
the fast recovery diode and the IGBT are connected in anti-parallel.
3. The smart power module of claim 1, wherein the heat sink comprises a copper substrate and a silver plating layer coated on a surface of the copper substrate.
4. The smart power module of claim 1 wherein the thickness of the heat sink is positively correlated to the magnitude of current flowing through the PFC power module;
and/or the size of the heat sink is positively correlated with the magnitude of the current flowing through the PFC power module.
5. The smart power module of claim 1, wherein the heat sink comprises a first heat sink and a second heat sink, the PFC power switch disposed on the first heat sink, the PFC diode disposed on the second heat sink.
6. The smart power module of claim 1 wherein the heat sink is further coated with a solder material for eutectic soldering with the PFC power switch tube and the PFC diode tube.
7. An apparatus for manufacturing an intelligent power module, comprising:
the chip carrier is used for placing the radiating fins;
the manipulator is used for carrying the PFC power module wafer onto the heat dissipation sheet;
the image acquisition device is used for acquiring an image of the PFC power module wafer;
the main controller is respectively electrically connected with the manipulator and the image acquisition device and is used for determining the position relation between the PFC power module wafer and the heat dissipation sheet according to the image of the motion platform acquired by the image acquisition device; and placing the PFC power module wafer to the target position of the heat radiating fin according to the position relation.
8. The apparatus for manufacturing a smart power module as recited in claim 7, further comprising:
the guide rail is used for placing the chip carrier and transporting the radiating fin to a preset position when the radiating fin is placed on the chip carrier;
and the stopper is arranged corresponding to the position of the image acquisition device and used for limiting the guide rail.
9. A manufacturing method of an intelligent power module is characterized by comprising the following steps:
preparing a heat radiating fin and a PFC power module wafer, wherein the PFC power module wafer comprises a PFC power switch chip and a PFC diode chip;
placing the radiating fin on a chip carrier, and drawing tin on the surface of one side of the radiating fin by using a soldering tin wire;
placing the PFC power module wafer on a target position on the surface of the heat radiating fin;
and pressing and die bonding the PFC power module wafer and the heat sink.
10. The method of manufacturing a smart power module as claimed in claim 9, wherein the method of manufacturing a smart power module further comprises the steps of:
obtaining a wafer image of the PFC power module after lamination and die bonding;
and marking the heat radiating fin and the PFC power module wafer when the PFC power module wafer is detected to have poor welding.
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| CN201910957324.7A CN110634854A (en) | 2019-10-08 | 2019-10-08 | Intelligent power module, manufacturing equipment and method of intelligent power module |
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