CN110625835A - 一种硅片成型加工方法 - Google Patents
一种硅片成型加工方法 Download PDFInfo
- Publication number
- CN110625835A CN110625835A CN201910863526.5A CN201910863526A CN110625835A CN 110625835 A CN110625835 A CN 110625835A CN 201910863526 A CN201910863526 A CN 201910863526A CN 110625835 A CN110625835 A CN 110625835A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- grinding
- grinding wheel
- cutting
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 190
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 188
- 239000010703 silicon Substances 0.000 title claims abstract description 188
- 238000003672 processing method Methods 0.000 title claims abstract description 21
- 235000012431 wafers Nutrition 0.000 claims abstract description 159
- 238000005520 cutting process Methods 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 50
- 230000008569 process Effects 0.000 claims abstract description 44
- 238000012545 processing Methods 0.000 claims abstract description 41
- 239000002253 acid Substances 0.000 claims abstract description 30
- 238000005498 polishing Methods 0.000 claims abstract description 27
- 230000007797 corrosion Effects 0.000 claims abstract description 19
- 238000005260 corrosion Methods 0.000 claims abstract description 19
- 230000002378 acidificating effect Effects 0.000 claims description 17
- 239000002173 cutting fluid Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical group [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229960000583 acetic acid Drugs 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 239000012362 glacial acetic acid Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 235000010288 sodium nitrite Nutrition 0.000 claims description 3
- 125000001246 bromo group Chemical group Br* 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims 5
- 238000000465 moulding Methods 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 2
- 230000006378 damage Effects 0.000 description 13
- 235000019580 granularity Nutrition 0.000 description 9
- 238000003754 machining Methods 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910863526.5A CN110625835A (zh) | 2019-09-12 | 2019-09-12 | 一种硅片成型加工方法 |
Applications Claiming Priority (1)
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CN201910863526.5A CN110625835A (zh) | 2019-09-12 | 2019-09-12 | 一种硅片成型加工方法 |
Publications (1)
Publication Number | Publication Date |
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CN110625835A true CN110625835A (zh) | 2019-12-31 |
Family
ID=68970900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201910863526.5A Pending CN110625835A (zh) | 2019-09-12 | 2019-09-12 | 一种硅片成型加工方法 |
Country Status (1)
Country | Link |
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CN (1) | CN110625835A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111872780A (zh) * | 2020-07-20 | 2020-11-03 | 上海新欣晶圆半导体科技有限公司 | 一种改善硅片边缘翘曲的方法 |
CN111923258A (zh) * | 2020-07-16 | 2020-11-13 | 李家行 | 一种双态循环富集技术的硅片酸性切割方法 |
CN113386275A (zh) * | 2021-08-18 | 2021-09-14 | 天通控股股份有限公司 | 一种大尺寸超薄铌酸锂晶片的切片方法 |
CN113714889A (zh) * | 2021-11-03 | 2021-11-30 | 天通控股股份有限公司 | 一种大尺寸超薄高精度铌酸锂晶片边缘加工方法 |
CN113903827A (zh) * | 2021-09-08 | 2022-01-07 | 宁波瑞元天科新能源材料有限公司 | 一种太阳能电池切割面抛光钝化方法和装置 |
WO2024098612A1 (zh) * | 2022-11-10 | 2024-05-16 | 上海中欣晶圆半导体科技有限公司 | 一种改善衬底抛光片外延后裂片的方法 |
Citations (10)
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CN101226904A (zh) * | 2008-01-24 | 2008-07-23 | 上海申和热磁电子有限公司 | 具有不对称边缘轮廓的硅片及其制造方法 |
CN101431021A (zh) * | 2008-12-11 | 2009-05-13 | 上海合晶硅材料有限公司 | 一种薄型硅单晶抛光片加工方法 |
CN102528597A (zh) * | 2010-12-08 | 2012-07-04 | 有研半导体材料股份有限公司 | 一种大直径硅片制造工艺 |
CN105034182A (zh) * | 2015-07-13 | 2015-11-11 | 苏州爱彼光电材料有限公司 | 超薄型蓝宝石片状体的加工方法 |
CN105121091A (zh) * | 2013-02-15 | 2015-12-02 | 埃尔温容克尔研磨技术股份公司 | 用于高精度无心磨削具有高表面品质的轴部件的方法和磨削工具 |
CN106298991A (zh) * | 2016-08-10 | 2017-01-04 | 协鑫集成科技股份有限公司 | 硅片及其制备方法及装置 |
CN107039241A (zh) * | 2017-03-09 | 2017-08-11 | 昆明理工大学 | 一种超薄硅的化学切割方法 |
CN107457921A (zh) * | 2017-08-24 | 2017-12-12 | 天津市环欧半导体材料技术有限公司 | 一种硅片制备工艺 |
CN109285762A (zh) * | 2018-09-29 | 2019-01-29 | 中国电子科技集团公司第四十六研究所 | 一种氮化镓外延用硅片边缘加工工艺 |
CN110126106A (zh) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | 晶圆加工方法 |
-
2019
- 2019-09-12 CN CN201910863526.5A patent/CN110625835A/zh active Pending
Patent Citations (10)
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CN101226904A (zh) * | 2008-01-24 | 2008-07-23 | 上海申和热磁电子有限公司 | 具有不对称边缘轮廓的硅片及其制造方法 |
CN101431021A (zh) * | 2008-12-11 | 2009-05-13 | 上海合晶硅材料有限公司 | 一种薄型硅单晶抛光片加工方法 |
CN102528597A (zh) * | 2010-12-08 | 2012-07-04 | 有研半导体材料股份有限公司 | 一种大直径硅片制造工艺 |
CN105121091A (zh) * | 2013-02-15 | 2015-12-02 | 埃尔温容克尔研磨技术股份公司 | 用于高精度无心磨削具有高表面品质的轴部件的方法和磨削工具 |
CN105034182A (zh) * | 2015-07-13 | 2015-11-11 | 苏州爱彼光电材料有限公司 | 超薄型蓝宝石片状体的加工方法 |
CN106298991A (zh) * | 2016-08-10 | 2017-01-04 | 协鑫集成科技股份有限公司 | 硅片及其制备方法及装置 |
CN107039241A (zh) * | 2017-03-09 | 2017-08-11 | 昆明理工大学 | 一种超薄硅的化学切割方法 |
CN107457921A (zh) * | 2017-08-24 | 2017-12-12 | 天津市环欧半导体材料技术有限公司 | 一种硅片制备工艺 |
CN109285762A (zh) * | 2018-09-29 | 2019-01-29 | 中国电子科技集团公司第四十六研究所 | 一种氮化镓外延用硅片边缘加工工艺 |
CN110126106A (zh) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | 晶圆加工方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111923258A (zh) * | 2020-07-16 | 2020-11-13 | 李家行 | 一种双态循环富集技术的硅片酸性切割方法 |
CN111923258B (zh) * | 2020-07-16 | 2021-12-14 | 连云港骐翔电子有限公司 | 一种双态循环富集技术的硅片酸性切割方法 |
CN111872780A (zh) * | 2020-07-20 | 2020-11-03 | 上海新欣晶圆半导体科技有限公司 | 一种改善硅片边缘翘曲的方法 |
CN111872780B (zh) * | 2020-07-20 | 2022-04-15 | 上海中欣晶圆半导体科技有限公司 | 一种改善硅片边缘翘曲的方法 |
CN113386275A (zh) * | 2021-08-18 | 2021-09-14 | 天通控股股份有限公司 | 一种大尺寸超薄铌酸锂晶片的切片方法 |
CN113386275B (zh) * | 2021-08-18 | 2021-10-22 | 天通控股股份有限公司 | 一种大尺寸超薄铌酸锂晶片的切片方法 |
CN113903827A (zh) * | 2021-09-08 | 2022-01-07 | 宁波瑞元天科新能源材料有限公司 | 一种太阳能电池切割面抛光钝化方法和装置 |
CN113903827B (zh) * | 2021-09-08 | 2024-03-15 | 宁波瑞元天科新能源材料有限公司 | 一种太阳能电池切割面抛光钝化方法和装置 |
CN113714889A (zh) * | 2021-11-03 | 2021-11-30 | 天通控股股份有限公司 | 一种大尺寸超薄高精度铌酸锂晶片边缘加工方法 |
WO2024098612A1 (zh) * | 2022-11-10 | 2024-05-16 | 上海中欣晶圆半导体科技有限公司 | 一种改善衬底抛光片外延后裂片的方法 |
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Effective date of registration: 20211015 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co., Ltd Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Application publication date: 20191231 |