CN110620177B - 以羰基硫作为掺杂剂的有机场效应晶体管制备工艺 - Google Patents
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Abstract
本发明公开了一种以羰基硫作为掺杂剂的有机场效应晶体管的制备工艺,包括如下步骤:(1)提供一衬底,所述衬底具有绝缘层;(2)在步骤(1)提供的衬底的绝缘层上制备修饰层;(3)在步骤(2)得到的衬底的修饰层上制备P型有机半导体材料层;(4)以羰基硫作为N型掺杂剂对步骤(3)得到的衬底的P型有机半导体材料层掺杂形成N型半导体材料层;(5)在步骤(4)得到的衬底的N型半导体材料层上制备源电极和漏电极。使P型有机场效应晶体管材料转换成N型材料,大大拓宽了P型材料的范围,极大的丰富有机半导体的N型材料种类。
Description
技术领域
本发明涉及材料领域,具体涉及一种以羰基硫作为掺杂剂的有机场效应晶体管制备工艺。
背景技术
有机场效应晶体管作为柔性电子的最基本构成单元,近年来得到飞速的发展。区别于传统硅基半导体利用参杂技术来实现P型及N型区域的技术,有机半导体材料利用分子的结构设计来获得P型及N型材料。然而,虽然分子的结构设计带来无数不同种类的半导体材料,由于有机半导体固有的能级原因,材料以P型有机半导体为主。同时由于现阶段对于N型分子的材料设计手段主要以加入拉电子基团来实现有机半导体材料的HOMO以及LUMO的降低,从而实现从P型有机半导体材料到N型有机半导体材料的转换。但由于材料的LUMO过低,N型有机半导体材料极易在空气中氧化。所以在有机半导体领域极其缺乏在空气中稳定的N型有机半导体材料。同时,由于分子的结构设计及合成会应用大量的有机溶剂及其他化学物质,导致三废处理成本极大。而对于有机半导体的实际应用来说,又急需与P型能级相匹配的N型材料。所以扩大N型有机半导体的种类以及数量是当务之急。
发明内容
本发明的目的是提供一种以羰基硫作为掺杂剂的有机场效应晶体管制备工艺,使P型有机场效应晶体管材料转换成N型材料,大大拓宽了P型材料的范围,极大的丰富有机半导体的N型材料种类。
为达到上述目的,本发明采用的技术方案是:一种以羰基硫作为掺杂剂的有机场效应晶体管的制备工艺,包括如下步骤:
(1)提供一衬底,所述衬底具有绝缘层;
(2)在步骤(1)提供的衬底的绝缘层上制备修饰层;
(3)在步骤(2)得到的衬底的修饰层上制备P型有机半导体材料层;
(4)以羰基硫作为N型掺杂剂对步骤(3)得到的衬底的P型有机半导体材料层掺杂形成N型半导体材料层;
(5)在步骤(4)得到的衬底的N型半导体材料层上制备源电极和漏电极。
进一步的,步骤(4)中,将硅片置于羰基硫气氛中退火1h,制得所述N型半导体材料层。
进一步的,步骤(1)中,所述衬底采用硅片、玻璃片、PI片或PMMA片,所述绝缘层为二氧化硅材料层、三氧化二铝材料层或五氧化二钽材料层。
进一步的,所述衬底为具有二氧化硅薄膜的硅片,所述硅片为100晶面P型重掺杂,其厚度为300mm。
进一步的,步骤(2)中,所述修饰层为十八烷基三氯硅烷材料层或辛基三氯硅烷材料层。
进一步的,步骤(2)中,将衬底浸泡在1mol/L的十八烷基三氯硅烷的甲苯溶液中24小时,制得所述十八烷基三氯硅烷材料层。
进一步的,所述P型有机半导体材料层的分子结构选自如下12种分子结构中任意一者:
进一步的,步骤(3)中,首先制备P3HT的氯苯溶液,其浓度为10mol/L,然后将P3HT的氯苯溶液旋涂在衬底的绝缘表面上,旋涂转速为5000r/min,旋涂厚度为100nm,制得所述P3HT材料层。
进一步的,所述源电极和所述漏电极为金电极、银电极、铜电极或铝电极。
进一步的,真空蒸镀50nm厚的金电极作为源电极和漏电极,所述金电极的厚度为50nm。
上文中,COS其分子式中的硫和氧的富电子特性,同时其又属于有机分子,使其十分适合作为有机半导体薄膜的N型掺杂剂,衬底同时作为门电极,绝缘层设于半导体层与门电极之间,修饰层用于改善S iO2的表面形貌和减少由于S i O2表面的裸露氢键形成的载流子陷阱,使器件性能更好。
由于上述技术方案运用,本发明与现有技术相比具有下列优点:本发明公开的以羰基硫作为掺杂剂的有机场效应晶体管制备工艺,利用COS的富电子特性,掺杂于P型有机半导体材料形成N型半导体材料,使P型有机场效应晶体管材料转换成N型材料,大大拓宽了P型材料的范围,极大的丰富有机半导体的N型材料种类,同时又避免了传统N型材料的设计方法带来的极易被空气氧化的问题。
附图说明
图1为本发明公开的有机场效应晶体管的示意图;
图2为本发明公开的制备工艺的流程图。
其中,1、衬底;2、绝缘层;3、修饰层;4、有机半导体材料层;5、源电极;6、漏电极;
S iO2、二氧化硅;ODTS、十八烷基三氯硅烷;To l、甲苯;P3HT、聚-3-己基噻吩;COS、羰基硫。
具体实施方式
结合附图及实施例对本发明作进一步描述:
实施例一
参见图1,有机场效应晶体管包括衬底1、绝缘层2、修饰层3、有机半导体材料层4、源电极5以及漏电极6。
参见图2,有机场效应晶体管的制备工艺步骤如下:
①以300nm厚的二氧化硅硅片为起始点,晶相:100晶面,P型重掺杂;
②把硅片浸泡在1mo l/L的十八烷基三氯硅烷的甲苯溶液中,浸泡24小时;
③然后将P3HT旋涂在硅片表层,
P3HT溶解在氯苯中;浓度:10mol/L;
旋涂转速:5000r/min
最终膜厚:100nm;
④然后将硅片置于COS中退火1h;
COS退火的目的在于使,COS分子扩散进入P3HT材料。利用COS富电子的特性,提高P3HT薄膜电子密度,从而使P3HT转换成N型半导体材料。
⑤最后真空蒸镀50nm厚的金电极作为源漏电极。
产品最终性能表:
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (10)
1.一种以羰基硫作为掺杂剂的有机场效应晶体管的制备工艺,其特征在于,包括如下步骤:
(1)提供一衬底,所述衬底具有绝缘层;
(2)在步骤(1)提供的衬底的绝缘层上制备修饰层;
(3)在步骤(2)得到的衬底的修饰层上制备P型有机半导体材料层;
(4)以羰基硫作为N型掺杂剂对步骤(3)得到的衬底的P型有机半导体材料层掺杂形成N型半导体材料层;
(5)在步骤(4)得到的衬底的N型半导体材料层上制备源电极和漏电极;
所述P型有机半导体材料层包括P3HT材料层。
2.如权利要求1所述的制备工艺,其特征在于,步骤(4)中,将硅片置于羰基硫气氛中退火1h,制得所述N型半导体材料层。
3.如权利要求1所述的制备工艺,其特征在于,步骤(1)中,所述衬底采用硅片、玻璃片、PI片或PMMA片,所述绝缘层为二氧化硅材料层、三氧化二铝材料层或五氧化二钽材料层。
4.如权利要求3所述的制备工艺,其特征在于,所述衬底为具有二氧化硅薄膜的硅片,所述硅片为100晶面P型重掺杂,其厚度为300mm。
5.如权利要求1所述的制备工艺,其特征在于,步骤(2)中,所述修饰层为十八烷基三氯硅烷材料层或辛基三氯硅烷材料层。
6.如权利要求5所述的制备工艺,其特征在于,步骤(2)中,将衬底浸泡在1mol/L的十八烷基三氯硅烷的甲苯溶液中24小时,制得所述十八烷基三氯硅烷材料层。
8.如权利要求7所述的制备工艺,其特征在于,步骤(3)中,首先制备P3HT的氯苯溶液,其浓度为10mol/L,然后将P3HT的氯苯溶液旋涂在衬底的绝缘表面上,旋涂转速为5000r/min,旋涂厚度为100nm,制得所述P3HT材料层。
9.如权利要求1所述的制备工艺,其特征在于,所述源电极和所述漏电极为金电极、银电极、铜电极或铝电极。
10.如权利要求9所述的制备工艺,其特征在于,真空蒸镀50nm厚的金电极作为源电极和漏电极,所述金电极的厚度为50nm。
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