CN110610990B - 显示屏、显示装置及移动终端 - Google Patents

显示屏、显示装置及移动终端 Download PDF

Info

Publication number
CN110610990B
CN110610990B CN201910829418.6A CN201910829418A CN110610990B CN 110610990 B CN110610990 B CN 110610990B CN 201910829418 A CN201910829418 A CN 201910829418A CN 110610990 B CN110610990 B CN 110610990B
Authority
CN
China
Prior art keywords
transparent
display screen
display
thin film
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910829418.6A
Other languages
English (en)
Other versions
CN110610990A (zh
Inventor
靳勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Oppo Mobile Telecommunications Corp Ltd
Original Assignee
Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Oppo Mobile Telecommunications Corp Ltd filed Critical Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority to CN201910829418.6A priority Critical patent/CN110610990B/zh
Publication of CN110610990A publication Critical patent/CN110610990A/zh
Application granted granted Critical
Publication of CN110610990B publication Critical patent/CN110610990B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147—Details of sensors, e.g. sensor lenses
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14678—Contact-type imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/17—Image acquisition using hand-held instruments
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1341—Sensing with light passing through the finger
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2354/00—Aspects of interface with display user
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Multimedia (AREA)
  • Electromagnetism (AREA)
  • Human Computer Interaction (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Vascular Medicine (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Image Input (AREA)
  • Collating Specific Patterns (AREA)

Abstract

本发明提供了一种显示屏，包括显示层，所述显示层设有指纹识别区，所述指纹识别区设有阵列的透明薄膜晶体管和位于所述透明薄膜晶体管之间的透明介质，所述透明薄膜晶体管和所述透明介质均用以透过光学指纹模组发射和接收的感应光线；所述透明薄膜晶体管具有透明栅极、透明源极和透明漏极。本发明还提供了一种移动终端。本发明通过在显示屏上设置设有透明薄膜晶体管的指纹识别区，且将光学指纹模组设于指纹识别区之下，从而提高了显示屏的透光率，提高了光学指纹模组的指纹识别准确率。

Description

显示屏、显示装置及移动终端
技术领域
本发明涉及显示技术领域，具体涉及一种显示屏、显示装置及移动终端。
背景技术
现有技术中指纹识别模组设于显示屏的显示区之外，以避免妨碍显示。但这样的结构设计使得显示区的占屏比(显示区占整个显示屏的比例)较小，影响用户体验。为避免破坏现有的OLED显示屏结构，技术人员提出将光学指纹识别模组设于OLED显示屏之下。光学指纹模组通过发射感应光线至手指纹路及采集被手指纹路反射的感应光线，来识别指纹信号。显示屏中设有薄膜晶体管，而薄膜晶体管的源极、栅极、漏极等通常由金属材料制成，这些由金属材料制得的电极不能使感应光线通过，从而使得所述使得显示屏的透光率较低，以至于从移动终端内部发射出的部分感应光线和反射回来的载有指纹信息的部分感应光线被显示屏吸收，这样使得指纹采集和识别的准确率较低，从而影响移动终端的指纹识别功能和用户的使用体验。
发明内容
针对以上的问题，本发明的目的是提供一种显示屏、显示装置及移动终端，以提高显示屏的透光率，进而提高光学指纹模组的指纹采集和识别的准确率。
为了解决背景技术中存在的问题，本发明提供了一种显示屏，其特征在于，包括显示层，所述显示层设有指纹识别区，所述指纹识别区设有阵列的透明薄膜晶体管和位于所述透明薄膜晶体管之间的透明介质，所述透明薄膜晶体管和所述透明介质均用以透过光学指纹模组发射和接收的感应光线；所述透明薄膜晶体管具有透明栅极、透明源极和透明漏极。
本发明提供了一种显示装置，包括所述的显示屏，还包括光学指纹模组和中框，所述显示屏和所述光学指纹模组固定于所述中框上，所述光学指纹模组位于所述显示屏背离用户的一侧，且所述光学指纹模组设于与所述指纹识别区相对应的位置，以便于透过所述指纹识别区发射和接收感应光线。
本发明提供了一种移动终端，包括所述的显示装置。
本发明实施例提供的显示屏，包括指纹识别区，通过在所述指纹识别区设有阵列的透明薄膜晶体管和在所述透明薄膜晶体管之间设置透明介质，使得指纹识别区的透光率增加。所述透明薄膜晶体管和所述透明介质均用以透过光学指纹模组发射和接收的感应光线，从而使得所述光学指纹模组发射至手指纹路的感应光线强度增大，则由手指纹路反射的感应光线强度相应地增大，进而提高光学指纹模组的指纹识别准确率。
本发明实施例提供的显示装置，包括上述的显示屏，还包括光学指纹模组和中框。所述显示屏和所述光学指纹模组固定于所述中框上。通过设置所述光学指纹模组位于所述显示屏背离用户的一侧，且所述光学指纹模组设于与所述指纹识别区相对应的位置，以便于透过所述指纹识别区发射和接收感应光线。所述指纹识别区可以提高显示屏的透光率，减少显示屏对感应光线的损耗，进而提高指纹模组的指纹采集和识别的准确率。
本发明实施例提供的移动终端，包括上述的显示装置。所述显示装置包括显示屏和设于显示屏背离用户一侧的光学指纹模组。所述显示屏包括指纹识别区。通过在所述指纹识别区设置阵列的透明薄膜晶体管和在所述透明薄膜晶体管之间设置透明介质，使得指纹识别区的透光率增加。所述光学指纹模组设于与所述指纹识别区相对应的位置，从而使得所述光学指纹模组发射至手指纹路的感应光线强度增大，则由手指纹路反射的感应光线强度相应地增大，进而提高光学指纹模组的指纹识别准确率。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的一种显示屏结构示意图。
图2是图1中所述的显示屏沿AA`方向的截面图。
图3是本发明第一实施例提供的显示屏结构示意图。
图4是本发明第二实施例提供的显示屏结构示意图。
图5是本发明第二实施例提供的显示屏结构示意图。
图6是本发明第二实施例提供的显示屏结构示意图。
图7是本发明第三实施例提供的显示屏结构示意图。
图8是本发明实施例提供的一种显示屏结构示意图。
图9是本发明实施例提供的透明薄膜晶体管结构示意图。
图10是本发明实施例提供的一种显示屏结构示意图。
图11是本发明实施例提供的一种显示装置结构示意图。
图12是本发明实施例提供的一种移动终端结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例的技术方案进行清楚、完整地描述。
请参阅图1，图1是本发明实施例提供的一种显示屏100。所述显示屏100包括显示层110，用以显示图像。所述显示层110包括指纹识别区111，所述指纹识别区111设有阵行的透明薄膜晶体管112和位于所述透明薄膜晶体管112之间的透明介质113，所述透明薄膜晶体管112为栅极、漏极、源极以及各电极层之间的绝缘层均由透明材料形成，以增加所述指纹识别区111的透光率。所述指纹识别区111用以透过光学指纹模组发射和接收的感应光线，从而增加所述光学指纹模组发射和接收的感应光线的透过率，进而提高所述光学指纹模组对于指纹识别的准确率。所述显示层110还包括邻接于所述指纹识别区111的周边区114，所述周边区114设有阵列的不透明薄膜晶体管115。
请参阅图2，图2为图1中所述的显示屏100沿AA`方向的截面图。由于所述不透明薄膜晶体管115的源极、栅极、漏极中的一个或多个电极由Al/Mo/Cu等金属或合金组成，所以所述不透明薄膜晶体管115的源极、栅极、漏极中的一个或多个电极不能使光线a的透过；而所述透明薄膜晶体管112为栅极、漏极、源极以及各电极层之间的绝缘层均由透明材料形成，可以使光线a的透过。因此，所述指纹识别区111的透光率远大于所述周边区114的透光率。进而，当在所述显示屏100背离用户的一侧设置光学指纹模组时，在显示屏100中设置所述指纹识别区111，所述指纹识别区111可极大地减少所述光学指纹模组发射至手指纹路的感应光线在所述显示屏100中损耗，从而确保较多感应光线投射至手指纹路表面并被该手指纹路表面反射，且所述指纹识别区111还可以极大地减少反射的感应光线在所述显示屏100中损耗，从而确保较多感应光线投射至光学指纹模组，所述光学指纹模组接收的感应光线越多，所述光学指纹识别的识别精度越高。
本实施例中，所述指纹识别区111可以为所述显示层110的一部分，也可以为整个显示层110，即所述显示屏100的图像显示区均为指纹识别区111。
进一步地，请参阅图3，所述显示屏100还包括多列扫描线1106，所述多列扫描线1106包括相连接的透明扫描线1107和不透明扫描线1108。具体而言，所述一列扫描线1106可以由相连接的透明扫描线1107和不透明扫描线1108构成，此时所述透明扫描线1107和所述不透明扫描线1108的连接处1109位于一列扫描线1106上。请参阅图4，所述多列扫描线1106也可以由相平行的多列透明扫描线1107和多列不透明扫描线1108构成，所述透明扫描线1107和所述不透明扫描线1108的连接处为一列透明扫描线1107与相邻列不透明扫描线1108之间的电连接线1110。其中，所述透明扫描线1107位于所述指纹识别区111，且连接于所述透明薄膜晶体管112的栅极，用以透过所述光学指纹模组发射和接收的感应光线，从而增加所述显示屏100的透光率。所述不透明扫描线1108位于所述周边区114，连接于所述不透明薄膜晶体管115的栅极。
进一步地，请参阅图3，所述显示屏100还包括多行数据线1101。所述多行数据线1101与所述多列扫描线1106的延伸方向相交，优选地，所述多行数据线1101垂直于所述多列扫描线1106。所述多行数据线1101包括相连接的透明数据线1102和不透明数据线1103，所述透明数据线1102位于所述指纹识别区111，并连接于所述透明薄膜晶体管112的源极。所述透明数据线1102用以透过所述光学指纹模组发射和接收的感应光线，从而增加所述显示屏100的透光率。所述不透明数据线1103位于所述周边区114，连接于所述不透明薄膜晶体管115的源极。与扫描线相类似地，所述一行数据线1101可以由相连接的透明数据线1102和不透明数据线1103构成，此时所述透明数据线1102和所述不透明数据线1103的连接处1104位于一行数据线1101上。请参阅图5，所述多行数据线1101也可以由相平行的多行透明数据线1102和多行不透明数据线1103构成，所述透明数据线1102和所述不透明数据线1103的连接处为一行透明数据线1102与相邻行不透明数据线1103之间的电连接线1105。
为增加指纹识别区111与周边区114的平整度，减少指纹识别区111与周边区114薄膜晶体管的结构差异，所述透明扫描线1107与所述不透明扫描线1108的线宽和线高可以相同，所述透明数据线1102与所述不透明数据线1103的线宽和线高可以相同。
本申请对于所述透明薄膜晶体管112和所述不透明薄膜晶体管115的栅极、源极和漏极的结构和尺寸不做限定，具体地，所述透明薄膜晶体管112和所述不透明薄膜晶体管115的栅极、源极和漏极的结构和尺寸可以相同，也可以不同，根据实际显示需要而定。
本申请对于指纹识别区111的位置不做限定，优选地，所述指纹识别区111的位置与所述光学指纹模组的位置相对应，可以地，所述光学指纹模组位于所述指纹识别区111的正下方(沿显示屏100厚度方向，且所述光学指纹模组位于所述显示屏100背离用户的一侧)。本申请对于指纹识别区111的尺寸不做限定，优选地，所述指纹识别区111的尺寸应大于所述光学指纹模组上的光感应区域的尺寸。所述指纹识别区111可以为所述显示层110的局部区域，可位于所述显示层110的中间区域，也可以位于所述显示层110的边缘区域。所述指纹识别区111还可以为整个所述显示层110区域。具体列举以下几种实施例进行说明。
第一实施例
请参阅图3，图3为本发明第一实施例提供的显示屏100结构示意图。所述指纹识别区111为所述显示层110的一部分，且所述指纹识别区111设于所述显示层110的中间区域，所述指纹识别区111的四周由所述周边区114环绕。这样的结构设计能适应用户的手持姿势，减少用户指纹解锁的难度，增加用户体验。用户解锁移动终端时，将移动终端放置于手掌上，大拇指的指纹所在的位置为显示层110的中间区域，用户不用移动大拇指的位置，直接将大拇指贴于所述显示层110中间区域的指纹识别区111，即可实现指纹解锁。
第二实施例
请参阅图4至图6，为本发明第二实施例提供的显示屏100结构示意图。所述指纹识别区111为所述显示层110的一部分，且所述指纹识别区111设于所述显示层110的边缘区域，所述周边区114邻接于所述指纹识别区111。这样的结构设计可实现在显示屏100的边缘区域制备所述透明薄膜晶体管112、所述透明扫描线1107和所述透明数据线1102。相对于第一实施例，所述透明扫描线1107与所述不透明扫描线1108的连接处少，所述透明数据线1102与所述数据扫描线的连接处少，从而减少所述透明扫描线1107与所述不透明扫描线1108之间的接触不良的几率，及减少所述透明数据线1102与所述不透明数据线1103之间的接触不良的几率。具体地，请参阅图4，相较于第一实施例，所述透明扫描线1107与所述不透明扫描线1108之间的连接处只有一处，位于一行所述透明扫描线1107与相邻的所述不透明扫描线1108的电连接线1110。请参阅图5，相较于第一实施例，所述透明数据线1102与所述不透明数据线1103之间的连接处只有一处，位于一行所述透明数据线1102与相邻的所述不透明数据线1103的电连接线1105。请参阅图6，相较于第一实施例，所述透明扫描线1107与所述不透明扫描线1108之间的连接处及所述透明数据线1102与所述不透明数据线1103之间的连接处均减少。
第三实施例
请参阅图7，图7为本发明第三实施例提供的显示屏100结构示意图。所述指纹识别区111为整个所述显示层110，这样的结构设计一方面增大指纹识别面积，减少因手指放置位置不准确造成的识别不准或失灵；另一方面，减少了因显示屏100的指纹识别区111上具有障碍物，该障碍物阻挡指纹识别造成的识别不准或失灵。此外，在显示层110任何位置都可以实现指纹识别，增加了用户的体验。
本申请对于所述指纹识别区111的数量不做限定。请参阅图8，所述指纹识别区111可以为多个，多个所述指纹识别区111分布于所述显示层110。这样的结构设计减少了因某一个指纹识别区111上具有障碍物，该障碍物阻挡指纹识别造成的识别不准或失灵。此外，在显示层110多个位置实现指纹识别，增加了用户的体验。
本申请对于所述指纹识别区111的形状不做限定。所述指纹识别区111可以为圆形、方形、椭圆形及不规则形状等。
请参阅图9，所述透明薄膜晶体管112具有透明源极1121、透明栅极1122和透明漏极1123，所述透明源极1121、所述透明栅极1122和所述透明漏极1123可以为掺锡氧化铟(Indium Tin Oxide，ITO)薄膜、ZnO:Al薄膜、ZnO:Ga薄膜中的一种或多种的组合，还可以为其他透明导电材料。所述透明薄膜晶体管112之间还设有透明介质113，所述透明介质113可以为SiO2薄膜或Al2O3薄膜或SiNx薄膜等中的一种或多种的组合，还可以为其他透明绝缘材料。
所述透明源极1121、所述透明栅极1122和所述透明漏极1123之间还设有绝缘层1124，所述绝缘层1124为SiO2薄膜或Al2O3薄膜等透明绝缘材料。所述透明薄膜晶体管112可以通过磁控溅射沉积及刻蚀工艺在透明基板1125上形成所述透明栅极1122，并在所述透明栅极1122上形成透明绝缘层1124、透明源极1121、和所述透明漏极1123。
进一步地，所述透明扫描线1107可以为ITO薄膜、ZnO:Al薄膜、ZnO:Ga薄膜中的一种或多种的组合。所述透明数据线1102可以为ITO薄膜、ZnO:Al薄膜、ZnO:Ga薄膜中的一种或多种的组合。所述透明扫描线1107和所述透明数据线1102可以通过磁控溅射沉积及刻蚀工艺形成。
为减少所述透明扫描线1107与所述不透明扫描线1108之间、所述透明数据线1102与所述不透明数据线1103之间的接触电阻，透明扫描线1107与不透明扫描线1108之间、所述透明数据线1102与所述不透明数据线1103之间的连接处可以采用过渡材料。如所述透明扫描线1107为Al金属，所述不透明扫描线1108为ITO薄膜，在透明扫描线1107与不透明扫描线1108连接处可以设置ITO薄膜与Al金属的混合材料。
进一步地，请参阅图10，所述显示屏100还包括遮光层117。所述遮光层117设于所述显示层110背离用户的一侧。所述遮光层117设有开孔118，所述开孔118位于与所述指纹识别区111相对应的位置，以使所述光学指纹模组透过所述指纹识别区111和所述开孔118发射和接收感应光线。一种实施方式中，所述开孔118的形状与尺寸与所述指纹识别区111的形状与尺寸相同。
所述显示屏100可以为有机发光二极管显示屏100(Organic Light-EmittingDiode，OLED)。所述显示层110为发光层。所述遮光层117为遮光泡棉层，用以遮挡光线穿过显示层110，及隐藏设于所述显示层110之下的内部结构，并在显示层110不发光状态下显示所述遮光层117的颜色。所述遮光层117可以为黑色、白色等不透光的颜色。在所述遮光泡棉层上开设所述开孔118，以便于光线透过所述遮光层117。
请参阅图11，图11为本发明实施例提供的一种显示装置200，包括上述任一实施方式所述的显示屏100，还包括光学指纹模组202和中框201，所述显示屏100和所述光学指纹模组202固定于所述中框201上，所述光学指纹模组202位于所述显示屏100背离用户的一侧，且所述光学指纹模组202设于与所述指纹识别区111相对应的位置，以便于透过所述指纹识别区111发射和接收感应光线。所述光学指纹模组202包括光发射器203和光感应器204，所述光发射器203和所述光感应器204分别用于发射感应光线b和接收感应光线c。在手指与显示屏100表面接触时，所述光发射器203发出的光形成入射光b，入射光b依次通过所述开孔118、所述显示层110的指纹识别区111后投射到手指纹路205。由于所述显示层110设有所述指纹识别区111，所述指纹识别区111设有透明的薄膜晶体管及设于所述薄膜晶体管之间的透明介质113、透明扫描线1107和透明数据线1102，能够增强感应光线b在显示层110中的透过率，从而使得投射到手指纹路205的入射光b强度较大。相应的，所述入射光b经手指纹路205反射形成的反射光c的强度也较大。此外，经手指纹路205反射形成的反射光c依次穿过指纹识别区111、开孔118投射至光感应器204时，所述指纹识别区111也能够增强感应光线c在显示层110中的透过率，进而光感应器204接收的感应光线c强度较大，进而增加光学指纹模组202的识别准确率。
请参阅图12，图12为本发明实施例提供的一种移动终端300，包括上述的显示装置200。所述显示装置200包括显示屏100和设于显示屏100背离用户一侧的光学指纹模组202。所述显示屏100包括指纹识别区111。通过在所述指纹识别区111设有阵列的透明薄膜晶体管112和在所述透明薄膜晶体管112之间设置透明介质113，使得指纹识别区111的透光率增加。所述光学指纹模组202设于与所述指纹识别区111相对应的位置，从而使得所述光学指纹模组202发射至手指纹路205的感应光线强度增大，则由手指纹路205反射的感应光线强度相应地增大，进而提高光学指纹模组202的指纹识别准确率。
综上所述，虽然本发明已以较佳实施例揭露如上，但该较佳实施例并非用以限制本发明，该领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。

Claims (9)

1.一种显示屏，其特征在于，包括显示层及遮光层，所述显示层设有指纹识别区，所述指纹识别区为所述显示层的图像显示区且用于与设于所述显示屏下的指纹识别模组相对；所述指纹识别区设有阵列的透明薄膜晶体管和位于所述透明薄膜晶体管之间的透明介质，所述透明薄膜晶体管和所述透明介质均用以透过光学指纹模组发射和接收的感应光线；所述透明薄膜晶体管具有透明栅极、透明源极和透明漏极；所述遮光层层叠设置于所述显示层背离用户的一侧，所述遮光层的正投影覆盖所述显示层的图像显示区，所述遮光层用以遮挡光线穿过所述显示层，及隐藏设于所述显示层之下的内部结构，所述遮光层设有开孔，所述开孔位于与所述指纹识别区相对应的位置，以使所述光学指纹模组透过所述指纹识别区和所述开孔发射和接收感应光线。
2.根据权利要求1所述的显示屏，其特征在于，所述显示层还包括邻接于所述指纹识别区的周边区，所述周边区设有阵列的不透明薄膜晶体管。
3.根据权利要求2所述的显示屏，其特征在于，所述显示层还包括多列扫描线，所述多列扫描线包括相连接的透明扫描线和不透明扫描线，所述透明扫描线位于所述指纹识别区，并连接于所述透明薄膜晶体管的栅极，用以透过所述光学指纹模组发射和接收的感应光线；所述不透明扫描线位于所述周边区，连接于所述不透明薄膜晶体管的栅极。
4.根据权利要求3所述的显示屏，其特征在于，所述透明栅极、所述透明源极和所述透明漏极为ITO薄膜、ZnO:Al薄膜、ZnO:Ga薄膜中的一种或多种的组合；所述透明扫描线为ITO薄膜、ZnO:Al薄膜、ZnO:Ga薄膜中的一种或多种的组合。
5.根据权利要求2所述的显示屏，其特征在于，所述显示层还包括多行数据线，所述多行数据线包括相连接的透明数据线和不透明数据线，所述透明数据线位于所述指纹识别区，并连接于所述透明薄膜晶体管的源极，用以透过所述光学指纹模组发射和接收的感应光线；所述不透明数据线位于所述周边区，连接于所述不透明薄膜晶体管的源极。
6.根据权利要求5所述的显示屏，其特征在于，所述透明数据线为ITO薄膜、ZnO:Al薄膜、ZnO:Ga薄膜中的一种或多种的组合。
7.如权利要求1所述的显示屏，其特征在于，所述透明介质为SiO2薄膜或Al2O3薄膜。
8.一种显示装置，其特征在于，包括权利要求1～7任意一项所述的显示屏，还包括光学指纹模组和中框，所述显示屏和所述光学指纹模组固定于所述中框上，所述光学指纹模组位于所述显示屏背离用户的一侧，且所述光学指纹模组设于与所述指纹识别区相对应的位置，以便于透过所述指纹识别区发射和接收感应光线。
9.一种移动终端，其特征在于，包括权利要求8所述的显示装置。
CN201910829418.6A 2017-04-27 2017-04-27 显示屏、显示装置及移动终端 Active CN110610990B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910829418.6A CN110610990B (zh) 2017-04-27 2017-04-27 显示屏、显示装置及移动终端

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710289263.2A CN107195675B (zh) 2017-04-27 2017-04-27 显示屏、显示装置及移动终端
CN201910829418.6A CN110610990B (zh) 2017-04-27 2017-04-27 显示屏、显示装置及移动终端

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201710289263.2A Division CN107195675B (zh) 2017-04-27 2017-04-27 显示屏、显示装置及移动终端

Publications (2)

Publication Number Publication Date
CN110610990A CN110610990A (zh) 2019-12-24
CN110610990B true CN110610990B (zh) 2023-06-02

Family

ID=59873596

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710289263.2A Active CN107195675B (zh) 2017-04-27 2017-04-27 显示屏、显示装置及移动终端
CN201910829418.6A Active CN110610990B (zh) 2017-04-27 2017-04-27 显示屏、显示装置及移动终端

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201710289263.2A Active CN107195675B (zh) 2017-04-27 2017-04-27 显示屏、显示装置及移动终端

Country Status (4)

Country Link
US (1) US11183531B2 (zh)
EP (1) EP3584842B1 (zh)
CN (2) CN107195675B (zh)
WO (1) WO2018196636A1 (zh)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107195675B (zh) * 2017-04-27 2019-09-27 Oppo广东移动通信有限公司 显示屏、显示装置及移动终端
CN107863370A (zh) * 2017-09-30 2018-03-30 昆山国显光电有限公司 显示装置
CN107608122B (zh) * 2017-10-19 2021-01-15 Oppo广东移动通信有限公司 显示屏、功能组件及移动终端
CN109697396A (zh) * 2017-10-24 2019-04-30 华为终端（东莞）有限公司 一种有机电致发光显示面板、显示模组及电子设备
CN109711229B (zh) * 2017-10-26 2021-12-21 中芯国际集成电路制造(上海)有限公司 一种指纹识别芯片及其制造方法和电子装置
CN110033699A (zh) * 2018-01-12 2019-07-19 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
JP2019144724A (ja) * 2018-02-19 2019-08-29 京セラ株式会社 電子機器及び制御方法
CN108711378B (zh) * 2018-04-28 2021-01-05 厦门天马微电子有限公司 显示面板和显示装置
CN108615746A (zh) * 2018-04-28 2018-10-02 武汉天马微电子有限公司 显示面板和显示装置
CN109063621A (zh) * 2018-07-25 2018-12-21 维沃移动通信有限公司 一种移动终端
WO2020027804A1 (en) * 2018-07-31 2020-02-06 Hewlett-Packard Development Company, L.P. Displays with partial transparent areas
CN109031823B (zh) * 2018-07-31 2023-06-30 Oppo广东移动通信有限公司 显示屏、电子设备及其控制方法
CN108898955A (zh) * 2018-07-31 2018-11-27 武汉天马微电子有限公司 一种显示面板及显示装置
EP3647995A1 (en) * 2018-09-21 2020-05-06 Shenzhen Goodix Technology Co., Ltd. Fingerprint identification apparatus and electronic device
CN109660645A (zh) * 2018-12-18 2019-04-19 武汉华星光电半导体显示技术有限公司 一种显示装置及其使用方法
CN109817665A (zh) * 2019-01-09 2019-05-28 昆山国显光电有限公司 像素结构和显示面板
CN110060651A (zh) * 2019-06-06 2019-07-26 合肥京东方光电科技有限公司 一种显示面板、显示装置及其驱动方法
WO2021015790A1 (en) * 2019-07-25 2021-01-28 Hewlett-Packard Development Company, L.P. Displays with partial transparent areas
CN111052139B (zh) * 2019-11-05 2024-03-15 深圳市汇顶科技股份有限公司 屏下指纹识别装置、lcd指纹识别系统和电子设备
KR20210081568A (ko) * 2019-12-24 2021-07-02 엘지디스플레이 주식회사 유기발광 표시장치
CN111524451B (zh) * 2020-04-30 2022-03-22 昆山国显光电有限公司 显示面板及显示装置
CN111881719B (zh) * 2020-06-09 2024-04-16 青岛奥美克生物信息科技有限公司 非接触式生物识别引导装置、方法以及生物特征识别系统
CN112038368A (zh) * 2020-08-17 2020-12-04 武汉华星光电半导体显示技术有限公司 阵列基板及oled显示面板
US11735109B2 (en) * 2020-10-19 2023-08-22 Lg Display Co., Ltd. Display panel and display device using the same
CN113299855B (zh) * 2021-05-21 2023-09-22 京东方科技集团股份有限公司 显示装置、显示面板及其制造方法
WO2024062570A1 (ja) * 2022-09-21 2024-03-28 シャープディスプレイテクノロジー株式会社 表示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM532056U (zh) * 2016-05-31 2016-11-11 Tpk Touch Solutions Xiamen Inc 指紋辨識裝置
WO2016195039A1 (ja) * 2015-06-05 2016-12-08 シャープ株式会社 アクティブマトリクス基板およびその製造方法、ならびにアクティブマトリクス基板を用いた表示装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100873497B1 (ko) * 2002-10-17 2008-12-15 삼성전자주식회사 지문 인식 소자를 내장한 일체형 액정표시장치 및 이의제조 방법
CN100530607C (zh) 2007-12-11 2009-08-19 西安交通大学 一种ZnO基透明薄膜晶体管阵列的制备方法
US20130287274A1 (en) * 2012-04-29 2013-10-31 Weidong Shi Methods and Apparatuses of Unified Capacitive Based Sensing of Touch and Fingerprint
US8994690B2 (en) * 2012-04-29 2015-03-31 Weidong Shi Method and apparatuses of transparent fingerprint imager integrated with touch display device
US20140292666A1 (en) * 2013-03-26 2014-10-02 Mobile Identity Management and Biometrics consortium Method and Apparatuses of User Interaction Control with Touch Display Device Integrated with Fingerprint Imager
TWI486844B (zh) * 2012-09-25 2015-06-01 Au Optronics Corp 光學觸控掃描裝置
US20150109214A1 (en) * 2013-10-22 2015-04-23 Weidong Shi Methods and Apparatuses of touch-fingerprinting Display
CN104252277A (zh) * 2014-09-18 2014-12-31 叶志 一种触摸面板阵列以及用于触摸面板阵列的扫描方法
TWI559185B (zh) * 2014-10-03 2016-11-21 速博思股份有限公司 兼具指紋辨識與觸控偵測的顯示裝置
US9679182B2 (en) * 2014-11-12 2017-06-13 Crucialtec Co., Ltd. Display apparatus capable of image scanning and driving method thereof
KR20160088764A (ko) * 2015-01-16 2016-07-26 삼성전자주식회사 플렉서블 디바이스 및 그 동작 방법
CN104850292B (zh) * 2015-06-01 2017-09-29 京东方科技集团股份有限公司 一种内嵌式触摸屏、其驱动方法及显示装置
US10268884B2 (en) * 2016-01-29 2019-04-23 Synaptics Incorporated Optical fingerprint sensor under a display
CN108268852A (zh) * 2016-03-17 2018-07-10 广东欧珀移动通信有限公司 屏幕组件、指纹采集和识别方法、移动终端及电子设备
CN105702176B (zh) * 2016-04-12 2018-06-15 深圳市华星光电技术有限公司 具有指纹识别的显示面板及显示装置
CN106022276B (zh) * 2016-05-25 2019-06-07 京东方科技集团股份有限公司 指纹识别器件及其制作方法、显示器件、显示装置
CN107195675B (zh) * 2017-04-27 2019-09-27 Oppo广东移动通信有限公司 显示屏、显示装置及移动终端

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016195039A1 (ja) * 2015-06-05 2016-12-08 シャープ株式会社 アクティブマトリクス基板およびその製造方法、ならびにアクティブマトリクス基板を用いた表示装置
TWM532056U (zh) * 2016-05-31 2016-11-11 Tpk Touch Solutions Xiamen Inc 指紋辨識裝置

Also Published As

Publication number Publication date
US11183531B2 (en) 2021-11-23
EP3584842B1 (en) 2023-09-20
US20200020737A1 (en) 2020-01-16
EP3584842A4 (en) 2020-03-04
CN110610990A (zh) 2019-12-24
CN107195675B (zh) 2019-09-27
EP3584842A1 (en) 2019-12-25
WO2018196636A1 (zh) 2018-11-01
CN107195675A (zh) 2017-09-22

Similar Documents

Publication Publication Date Title
CN110610990B (zh) 显示屏、显示装置及移动终端
CN107194321B (zh) 显示屏、显示装置及移动终端
US11538270B2 (en) Display panel and display device
CN106897699B (zh) 一种指纹识别器件、oled显示装置
US11003886B2 (en) Display apparatus including a fingerprint identification device
CN109273497B (zh) 一种oled显示基板及显示装置
US11644914B2 (en) Display panel and display device
US20200105828A1 (en) Display apparatus including light-receiving device
JP2008096523A (ja) 表示装置
CN111653599B (zh) 指纹识别显示面板和显示装置
WO2019148798A1 (en) Pattern identification device and display apparatus
WO2021136342A1 (zh) 指纹识别器件、指纹识别显示基板及其制作方法
US20230215211A1 (en) Display Panel and Display Device
US11769344B2 (en) Pattern identification device and display apparatus
CN113690271A (zh) 显示基板及显示装置
WO2022022068A1 (zh) 显示面板及显示装置
WO2021258957A1 (zh) 纹路识别装置以及电子装置
CN113224118B (zh) 纹路识别显示面板和显示装置
US20220336510A1 (en) Line recognition module, fabricating method thereof and display device
CN111650769B (zh) 一种显示装置及其驱动方法
TWI724672B (zh) 具有光學掃描功能的觸控板
CN114730503A (zh) 屏下指纹识别模组、显示组件及显示装置
CN117545314A (zh) 显示面板
CN117542091A (zh) 光学指纹感测装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant