CN110610947A - Tft阵列基板及oled面板 - Google Patents

Tft阵列基板及oled面板 Download PDF

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CN110610947A
CN110610947A CN201910776539.9A CN201910776539A CN110610947A CN 110610947 A CN110610947 A CN 110610947A CN 201910776539 A CN201910776539 A CN 201910776539A CN 110610947 A CN110610947 A CN 110610947A
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layer
thin film
film transistor
substrate
tft array
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张锋
戴超
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201910776539.9A priority Critical patent/CN110610947A/zh
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Priority to US16/644,218 priority patent/US20210098549A1/en
Priority to PCT/CN2020/075623 priority patent/WO2021031535A1/zh
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Abstract

本发明公开了一种TFT阵列基板及OLED面板。所述TFT阵列基板包括：显示区，所述TFT阵列基板包括：衬底；驱动薄膜晶体管，设置于所述衬底上并且位于所述显示区，所述驱动薄膜晶体管包括多晶硅半导体层；以及开关薄膜晶体管，设置于所述衬底上并且位于所述显示区，所述开关薄膜晶体管电性连接所述驱动薄膜晶体管，所述开关薄膜晶体管包括氧化物半导体层。

Description

TFT阵列基板及OLED面板
技术领域
本发明涉及显示技术领域，特别是涉及一种TFT阵列基板及OLED面板。
背景技术
有机发光二极管(organic light emitting diode,OLED)具有宽视角、广色域、高对比度、低功耗和可折叠/柔性等诸多优异特性，在新世代显示技术中具有强有力的竞争力，其中AMOLED技术更是当前显示技术的重点发展方向之一。
AMOLED的基本像素驱动电路至少包括一个Switch TFT(STFT)，一个Driver TFT(DTFT)及一个存储电容Cst。因DTFT受制程工艺的均一性和随使用时间的衰减等因素制约使Vth易发生漂移，导致OLED驱动电流易发生变化，使得OLED显示图像不均匀，影响画质。因此，在实际的面板使用中均采用具有补偿功能的像素电路从而实现优质的画质，如图1所示的6T1C像素补偿电路。然而受限于低温多晶硅(Low Temperature Poly-silicon，LTPS)技术形成的TFT通常漏电流都会较大，使存储电容两端Data电压不易保持，从而可能导致OLED面板显示亮度不稳定或碎亮点等异常发生，因此，在实际电路设计中通常将图1所示的STFT_T3及T4均设计为双栅结构来抑制漏电流对像素电路的影响。然而，这样的设计可能会影响的AMOLED显示器的柔韧性。
故，有必要提供一种TFT阵列基板及OLED面板，以解决现有技术所存在的问题。
发明内容
本发明的目的在于提供一种TFT阵列基板及OLED面板，利用氧化物半导体所形成的TFT来取代现有技术利用LTPS技术所形成的STFT，藉此有效地实现降低像素电路漏电流的发生,从而提升OLED显示画质；同时利用氧化物半导体形成的TFT具有优越的可弯折特性。
为达成本发明的前述目的，本发明提供一种TFT阵列基板，所述TFT阵列基板包括：显示区，所述TFT阵列基板包括：
衬底；
驱动薄膜晶体管，设置于所述衬底上并且位于所述显示区，所述驱动薄膜晶体管包括多晶硅半导体层；以及
开关薄膜晶体管，设置于所述衬底上并且位于所述显示区，所述开关薄膜晶体管电性连接所述驱动薄膜晶体管，所述开关薄膜晶体管包括氧化物半导体层。
根据本发明一实施例，所述氧化物半导体层是铟镓锌氧化物(Indium GalliumZinc Oxide,IGZO)半导体层。
根据本发明一实施例，所述衬底上设置有依次层叠的阻挡层及缓冲层，所述阻挡层及缓冲层位于所述衬底与所述驱动薄膜晶体管及所述开关薄膜晶体管之间。
根据本发明一实施例，所述驱动薄膜晶体管包括：依次层叠设置的所述多晶硅半导体层、第一栅极绝缘层、第一栅极层、第二栅绝缘层、第二栅极层、介电绝缘层及源漏极层。
根据本发明一实施例，所述开关薄膜晶体管包括：依次层叠设置的所述氧化物半导体层、所述第二栅绝缘层、所述第二栅极层、所述介电绝缘层及所述源漏极层。
根据本发明一实施例，所述衬底是柔性衬底，所述柔性衬底包括依次层叠设置的第一柔性子层、无机子层及第二柔性子层。
根据本发明一实施例，所述TFT阵列基板还包括可弯折区，且所述TFT阵列基板包括有机物填充层，设置在所述柔性衬底上并且位于所述可弯折区。
本发明还提供一种OLED面板，所述OLED面板包括：
TFT阵列基板，包括显示区及可弯折区，所述TFT阵列基板包括：柔性衬底；驱动薄膜晶体管，设置于所述柔性衬底上并且位于所述显示区，所述驱动薄膜晶体管包括多晶硅半导体层；开关薄膜晶体管，设置于所述柔性衬底上并且位于所述显示区，所述开关薄膜晶体管电性连接所述驱动薄膜晶体管，所述开关薄膜晶体管包括氧化物半导体层；以及有机物填充层，设置于所述柔性衬底上并且位于所述可弯折区；
平坦层，设置于所述TFT阵列基板上；以及
有机发光器件层，设置于所述平坦层上，所述有机发光器件层包括OLED位于所述显示区，且所述OLED与所述驱动薄膜晶体管电性连接。
根据本发明一实施例，所述OLED包括依次层叠设置的第一电极、有机发光层、第二电极，其中所述第一电极通过导电通孔连接所述驱动薄膜晶体管的源漏极层。
根据本发明一实施例，所述有机发光器件层还包括依次层叠设置像素定义层、光阻层及TFE封装层。
本发明的有益效果为：由于利用氧化物半导体层(例如IGZO)形成的TFT具有极小的漏电流，将氧化物半导体层(例如IGZO)作为开关薄膜晶体管可以有效降低开关薄膜晶体管的漏电流，进而提升OLED面板的显示画质。此外，氧化物半导体层(例如IGZO)具有优越的柔韧性，更可以应用于柔性显示的领域。本发明可以减少漏电流以维持显示画质的条件下，同时维持OLED面板的可弯折特性。
附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
图1是现有技术OLED面板的补偿电路图。
图2是本发明实施例的一种TFT阵列基板的一结构剖视图。
图3是本发明实施例的一种OLED面板的一结构剖视图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图2，图2是本发明实施例的一种TFT阵列基板的一结构剖视图。本实施例提供一种TFT阵列基板1，所述TFT阵列基板1包括了显示区10及可弯折区20，且所述TFT阵列基板1包括衬底110、驱动薄膜晶体管210、开关薄膜晶体管220及有机物填充层230。
所述衬底110上设置有依次层叠的阻挡层120及缓冲层130，所述阻挡层120及所述缓冲层1230位于所述衬底110与所述驱动薄膜晶体管210及所述开关薄膜晶体管220之间。所述衬底110可以是柔性衬底，所述柔性衬底可以包括依次层叠设置的第一柔性子层111、无机子层112及第二柔性子层113。所述第一柔性子层111及所述第二柔性子层113可以由柔性有机材料所制成，例如聚酰亚胺(polyimide,PI)或其它具有相似特征的材料。应当理解的是，所述是柔性衬底也可由单一层柔性有机材料所制成，例如聚酰亚胺(polyimide,PI)或其它具有相似特征的材料。
所述驱动薄膜晶体管210设置于所述衬底110上并且位于所述显示区10，所述驱动薄膜晶体管210包括多晶硅半导体层211，其可以用以作为所述驱动薄膜晶体管210的有源区。所述驱动薄膜晶体管210包括：依次层叠设置的所述多晶硅半导体层211、第一栅极绝缘层212、第一栅极层213、第二栅绝缘层214、第二栅极层215、介电绝缘层216及源漏极层217。依图2为例，所述多晶硅半导体层211可以定义形成在所述缓冲层130上。所述第一栅极绝缘层212定义形成在所述多晶硅半导体层211上，所述第一栅极绝缘层212的材料可以包括氧化硅或其它可行的绝缘材料。所述第一栅极层213定义形成在所述第一栅极绝缘层212上，所述第一栅极层213是由导电材料所制成，例如金属材料。所述第二栅绝缘层214定义形成在所述第一栅极层213上，所述第二栅绝缘层214还可以包覆所述第一栅极层213。所述第二栅绝缘层214的材料可以包括氧化硅及氮化硅，例如叠层的氧化硅/氮化硅，或其它可行的材料。所述第二栅极层215定义形成在所述第二栅绝缘层214上，所述第二栅极层215是由导电材料所制成，例如金属材料。所述介电绝缘层216形成在所述第二栅极层215及所述第一栅极绝缘层212上。所述源漏极层217定义形成在所述介电绝缘层216上，所述源漏极层217包括有所述驱动薄膜晶体管210的源极217a及所述驱动薄膜晶体管210的漏极217b。所述源极217a与所述漏极217b分别透过对应的第一导电通孔216a、216b与所述多晶硅半导体层211电性连接。所述第一导电通孔216a、216b穿透所述介电绝缘层216及所述第一栅极绝缘层212。
所述开关薄膜晶体管220设置于所述衬底110上并且位于所述显示区10，所述开关薄膜晶体管220电性连接所述驱动薄膜晶体管210，如图1中DTFT_T1与STFT_T3之连接。所述开关薄膜晶体管220包括氧化物半导体层221，所述氧化物半导体层221可以是铟镓锌氧化物(Indium Gallium Zinc Oxide,IGZO)半导体层或其它具有相似特性的氧化物半导体材料。所述开关薄膜晶体管220可以包括：依次层叠设置的所述氧化物半导体层221、所述第二栅绝缘层214、所述第二栅极层215、所述介电绝缘层216及所述源漏极层217。以图2为例，所述氧化物半导体层221可以定义形成所述第一栅极绝缘层212上，其可以用以作为所述开关薄膜晶体管220的有源区。所述第二栅绝缘层214定义形成在所述第一栅极绝缘层212上。所述第二栅绝缘层214的材料可以包括氧化硅及氮化硅，例如叠层的氧化硅/氮化硅，或其它可行的材料。所述第二栅极层215定义形成在所述第二栅绝缘层214上，所述第二栅极层215是由导电材料所制成，例如金属材料。所述介电绝缘层216形成在所述第二栅极层215及所述第一栅极绝缘层212上。所述源漏极层217定义形成在所述介电绝缘层216上，所述源漏极层217包括有所述开关薄膜晶体管220的源极217c及所述开关薄膜晶体管220的漏极217d。所述源极217c与所述漏极217d分别透过对应的第二导电通孔216c、216d与所述氧化物半导体层221电性连接。所述第二导电通孔216c、216d穿透所述介电绝缘层216。意即开关薄膜晶体管220，如图1所示的STFT_T3或STFT_T4，是利用所述氧化物半导体层221(例如IGZO)所形成，透过降低开关薄膜晶体管的漏电流，来提升OLED面板的显示画质。
所述有机物填充层230设置在所述衬底110上并且位于所述可弯折区20。以图2为例，在所述可弯折区20具有一凹槽，用以容置所述有机物填充层230，藉此增加所述TFT阵列基板1的可弯折性。所述凹槽可以穿透所述介电绝缘层216、所述第一栅极绝缘层212、所述缓冲层130及所述阻挡层120。应当理解的是，在所述机物填充层230还可以设置有所述源漏极层217，例如源漏极走线217e，用以电性连接控制芯片(未绘示)。
此外，所述TFT阵列基板1的所述显示区10还可以设置OLED 310，所述OLED 310与所述驱动薄膜晶体管210电性连接，OLED 310的结构可以请参照图3的相关记载。
应当理解的是，术语定义形成是指利用沉积技术、图案化技术(例如光刻)、蚀刻技术等制作技术交互配合，以将各膜层以特定的图案形成再需的位置上。应当理解的是，所述驱动薄膜晶体管210、所述开关薄膜晶体管220中的共同具有的各膜层结构可以在同一制程中形成，例如所述第二栅极层215可以是在同一沉积制程中沉积在所述第二栅绝缘层214上，并且透过图案化技术形成在所需要的位置。
请参照图3，图3是本发明实施例的一种OLED面板的一结构剖视图。本实施例提供了一种OLED面板，所述OLED面板包括：TFT阵列基板1、平坦层250及有机发光器件层300。
所述TFT阵列基板1包括显示区10及可弯折区20，且所述TFT阵列基板1包括：柔性衬底110、驱动薄膜晶体管210、开关薄膜晶体管220及有机物填充层230。
所述柔性衬底110上设置有依次层叠的阻挡层120及缓冲层130，所述阻挡层120及所述缓冲层130位于所述柔性衬底110与所述驱动薄膜晶体管210及所述开关薄膜晶体管220之间。所述柔性衬底110包括依次层叠设置的第一柔性子层111、无机子层112及第二柔性子层113。所述第一柔性子层111及所述第二柔性子层113可以由柔性有机材料所制成，例如聚酰亚胺(polyimide,PI)或其它具有相似特征的材料。应当理解的是，所述是柔性衬底110也可由单一层柔性有机材料所制成，例如聚酰亚胺(polyimide,PI)或其它具有相似特征的材料。
所述驱动薄膜晶体管210设置于所述柔性衬底110上并且位于所述显示区10，所述驱动薄膜晶体管210包括多晶硅半导体层211。所述驱动薄膜晶体管210包括：依次层叠设置的所述多晶硅半导体层211、第一栅极绝缘层212、第一栅极层213、第二栅绝缘层214、第二栅极层215、介电绝缘层216及源漏极层217。依图3为例，所述多晶硅半导体层211可以定义形成在所述缓冲层130上。所述第一栅极绝缘层212定义形成在所述多晶硅半导体层211上，所述第一栅极绝缘层212的材料可以包括氧化硅或其它可行的绝缘材料。所述第一栅极层213是由导电材料所制成，例如金属材料。所述第二栅绝缘层214定义形成在所述第一栅极层213上，所述第二栅绝缘层214还可以包覆所述第一栅极层213。所述第二栅绝缘层214的材料可以包括氧化硅及氮化硅例如叠层的氧化硅/氮化硅，或其它可行的材料。所述第二栅极层215定义形成在所述第二栅绝缘层214上，所述第二栅极层215是由导电材料所制成，例如金属材料。所述介电绝缘层216形成在所述第二栅极层215及所述第一栅极绝缘层212上。所述源漏极层217定义形成在所述介电绝缘层216上，所述源漏极层217包括有所述驱动薄膜晶体管210的源极217a及所述驱动薄膜晶体管210的漏极217b。所述源极217a与所述漏极217b分别透过对应的第一导电通孔216a、216b与所述多晶硅半导体层211电性连接。所述第一导电通孔216a、216b穿透所述介电绝缘层216及所述第一栅极绝缘层212。
所述开关薄膜晶体管220设置于所述柔性衬底110上并且位于所述显示区10，所述开关薄膜晶体管220电性连接所述驱动薄膜晶体管210。所述开关薄膜晶体管220包括氧化物半导体层221，所述氧化物半导体层221可以是铟镓锌氧化物(Indium Gallium ZincOxide,IGZO)半导体层或其它具有相似特性的氧化物半导体材料。所述开关薄膜晶体管220可以包括：依次层叠设置的所述氧化物半导体层221、所述第二栅绝缘层214、所述第二栅极层215、所述介电绝缘层216及所述源漏极层217。以图3为例，所述氧化物半导体层221可以定义形成所述第一栅极绝缘层212上，其可以用以作为所述开关薄膜晶体管220的有源区。所述第二栅绝缘层214定义形成在所述第一栅极绝缘层212上。所述第二栅绝缘层214的材料可以包括氧化硅及氮化硅，例如叠层的氧化硅/氮化硅，或其它可行的材料。所述第二栅极层215定义形成在所述第二栅绝缘层214上，所述第二栅极层215是由导电材料所制成，例如金属材料。所述介电绝缘层216形成在所述第二栅极层215及所述第一栅极绝缘层212上。所述源漏极层217定义形成在所述介电绝缘层216上，所述源漏极层217包括有所述开关薄膜晶体管220的源极217c及所述开关薄膜晶体管220的漏极217d。所述源极217c与所述漏极217d分别透过对应的第二导电通孔216c、216d与所述氧化物半导体层221电性连接。所述第二导电通孔216c、216d穿透所述介电绝缘层216。
所述有机物填充层230设置于所述柔性衬底110上并且位于所述可弯折区20。以图3为例，在所述可弯折区20具有一凹槽，用以容置所述有机物填充层230，藉此增加所述TFT阵列基板1的可弯折性。所述凹槽可以穿透所述介电绝缘层216、所述第一栅极绝缘层212、所述缓冲层130及所述阻挡层120。应当理解的是，在所述机物填充层230还可以设置有所述源漏极层217，例如源漏极走线217e，用以电性连接控制芯片(未绘示)。
所述平坦层250设置于所述TFT阵列基板1上，且所述平坦层250接触所述源漏极层217与所述介电绝缘层216。
所述有机发光器件层300设置于所述平坦层250上，所述有机发光器件层300包括OLED 310位于所述显示区1，且所述OLED 310与所述驱动薄膜晶体管210电性连接。所述OLED 310包括依次层叠设置的第一电极311、有机发光层312、第二电极313，其中所述第一电极311通过第三导电通孔314电性连接所述驱动薄膜晶体管210的所述源漏极层217(例如217b)。其中所述第一电极311及所述第二电极313可以由透明导电材料所制成。所述有机发光器件层300还包括依次层叠设置像素定义层315、光阻层316及TFE封装层317。
以图3为例说明，所述OLED 310的所述第一电极311定义形成在所述驱动薄膜晶体管210上，所述第一电极311通过所述第三导电通孔314与所述驱动薄膜晶体管210的所述源漏极层217(例如217b)电性连接。所述像素定义层315形成在所述平坦层250及所述第一电极311上，且所述像素定义层315可以包括暴露出部分所述第一电极311的一开口，所述开口可以容置所述有机发光层312。所述第二电极313形成在有机发光层312上。所述光阻层316定义形成在所述像素定义层315上。应当理解的是，所述像素定义层315及所述光阻层316可以是相同材料，例如是相同的有机材料，并且通过半色调(Halftone)技术来定义形成所述像素定义层315及所述光阻层316。
本发明的有益效果为：由于利用氧化物半导体层(例如IGZO)形成的TFT具有极小的漏电流，将氧化物半导体层(例如IGZO)作为开关薄膜晶体管可以有效降低开关薄膜晶体管的漏电流，进而提升OLED面板的显示画质。此外，氧化物半导体层(例如IGZO)具有优越的柔韧性，更可以应用于柔性显示的领域。本发明可以减少漏电流以维持显示画质的条件下，同时维持OLED面板的可弯折特性。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例幷非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

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1.一种TFT阵列基板，其特征在于：所述TFT阵列基板包括：显示区，所述TFT阵列基板包括：
衬底；
驱动薄膜晶体管，设置于所述衬底上并且位于所述显示区，所述驱动薄膜晶体管包括多晶硅半导体层；以及
开关薄膜晶体管，设置于所述衬底上并且位于所述显示区，所述开关薄膜晶体管电性连接所述驱动薄膜晶体管，所述开关薄膜晶体管包括氧化物半导体层。
2.如权利要求1所述的TFT阵列基板，其特征在于：所述氧化物半导体层是铟镓锌氧化物半导体层。
3.如权利要求1所述的TFT阵列基板，其特征在于：所述衬底上设置有依次层叠的阻挡层及缓冲层，所述阻挡层及所述缓冲层位于所述衬底与所述驱动薄膜晶体管及所述开关薄膜晶体管之间。
4.如权利要求3所述的TFT阵列基板，其特征在于：所述驱动薄膜晶体管包括：依次层叠设置的所述多晶硅半导体层、第一栅极绝缘层、第一栅极层、第二栅绝缘层、第二栅极层、介电绝缘层及源漏极层。
5.如权利要求4所述的TFT阵列基板，其特征在于：所述开关薄膜晶体管包括：依次层叠设置的所述氧化物半导体层、所述第二栅绝缘层、所述第二栅极层、所述介电绝缘层及所述源漏极层。
6.如权利要求1所述的TFT阵列基板，其特征在于：所述衬底是柔性衬底，所述柔性衬底包括依次层叠设置的第一柔性子层、无机子层及第二柔性子层。
7.如权利要求6所述的TFT阵列基板，其特征在于：所述TFT阵列基板还包括可弯折区，且所述TFT阵列基板包括有机物填充层，设置在所述柔性衬底上并且位于所述可弯折区。
8.一种OLED面板，特征在于：所述OLED面板包括：
TFT阵列基板，包括显示区及可弯折区，所述TFT阵列基板包括：柔性衬底；驱动薄膜晶体管，设置于所述柔性衬底上并且位于所述显示区，所述驱动薄膜晶体管包括多晶硅半导体层；开关薄膜晶体管，设置于所述柔性衬底上并且位于所述显示区，所述开关薄膜晶体管电性连接所述驱动薄膜晶体管，所述开关薄膜晶体管包括氧化物半导体层；以及有机物填充层，设置于所述柔性衬底上并且位于所述可弯折区；
平坦层，设置于所述TFT阵列基板上；以及
有机发光器件层，设置于所述平坦层上，所述有机发光器件层包括OLED位于所述显示区，且所述OLED与所述驱动薄膜晶体管电性连接。
9.如权利要求8所述OLED面板，其特征在于：所述OLED包括依次层叠设置的第一电极、有机发光层、第二电极，其中所述第一电极通过导电通孔连接所述驱动薄膜晶体管的源漏极层。
10.如权利要求8所述OLED面板，其特征在于：所述有机发光器件层还包括依次层叠设置像素定义层、光阻层及TFE封装层。
CN201910776539.9A 2019-08-22 2019-08-22 Tft阵列基板及oled面板 Pending CN110610947A (zh)

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