CN110606738A - 一种高绝缘电子陶瓷材料及其生产工艺 - Google Patents
一种高绝缘电子陶瓷材料及其生产工艺 Download PDFInfo
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Abstract
一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶15重量份~35重量份;氧化硅15重量份~35重量份;氧化铝18重量份~39重量份;氧化铁0.4重量份~1.2重量份;氧化钙0.5重量份~0.61重量份;氧化锂0.4重量份~1.2重量份;三氧化二铝0.4重量份~1.2重量份;三氧化二硼0.5重量份~0.61重量份;氧化铬0.5重量份~0.61重量份;2‑羟基‑2‑甲基‑1‑苯基丙酮0.8重量份~2.7重量份,氧化铌锶钡5重量份~15重量份,本发明通过将钛酸锶、2‑羟基‑2‑甲基‑1‑苯基丙酮、氧化铌锶钡、硅烷偶联剂、酒石酸锑钾加入原材料中,避免了电子陶瓷在使用过程中易碎,脆性较大的问题。
Description
技术领域
本发明属于电子陶瓷材料技术领域,具体涉及一种高绝缘电子陶瓷材料及其生产工艺。
背景技术
电子陶瓷或称电子工业用陶瓷,它在化学成分、微观结构和机电性能上,均与一般的电力用陶瓷有着本质的区别。这些区别是电子工业对电子陶瓷所提出的一系列特殊技术要求而形成的,其中最重要的是须具有高的机械强度,耐高温高湿,抗辐射,介质常数在很宽的范围内变化,介质损耗角正切值小,电容量温度系数可以调整(或电容量变化率可调整).抗电强度和绝缘电阻值高,以及老化性能优异等。
目前的高绝缘电子陶瓷材料还存在一些缺陷,使用高绝缘电子陶瓷时,高绝缘电子陶瓷未加入2-羟基-2-甲基-1-苯基丙酮、氧化铌锶钡、硅烷偶联剂,难以避免电子陶瓷在使用过程中易碎,脆性较大,同时制造高绝缘电子陶瓷时,由于高绝缘电子陶瓷制造只进行一次球磨,未在加入固化原料后进行进一步球磨,一次球磨难以保证原料的稳定性,未对原料进行榨泥,难以保证原料的充分相融和。
发明内容
本发明的目的在于提供一种高绝缘电子陶瓷材料及其生产工艺,以解决使用高绝缘电子陶瓷时,高绝缘电子陶瓷未加入2-羟基-2-甲基-1-苯基丙酮、氧化铌锶钡、硅烷偶联剂,使得电子陶瓷在使用过程中易碎,脆性较大,同时由于高绝缘电子陶瓷制造只进行一次球磨,未在加入固化原料后进行进一步球磨,一次球磨难以保证原料的稳定性,未对原料进行榨泥,难以保证原料的充分相融和的问题。
为实现上述目的,本发明提供如下技术方案:一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶15重量份~35重量份;氧化硅15重量份~35重量份;氧化铝18重量份~39重量份;氧化铁0.4重量份~1.2重量份;氧化钙0.5重量份~0.61重量份;氧化锂0.4重量份~1.2重量份;三氧化二铝0.4重量份~1.2重量份;三氧化二硼0.5重量份~0.61重量份;氧化铬0.5重量份~0.61重量份;2-羟基-2-甲基-1-苯基丙酮0.8重量份~2.7重量份,氧化铌锶钡5重量份~15重量份,硅烷偶联剂3.5重量份~8.5重量份,酒石酸锑钾3.5重量份~8.5重量份。
一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶35重量份;氧化硅20重量份;氧化铝39重量份;氧化铁0.45重量份;氧化钙0.5重量份;氧化锂1.2重量份;三氧化二铝1.2重量份;0.61重量份;三氧化二硼0.61重量份;氧化铬0.61重量份2-羟基-2-甲基-1-苯基丙酮0.8重量份,氧化铌锶钡5重量份,硅烷偶联剂3.5重量份,酒石酸锑钾3.5重量份。
一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶25重量份;氧化硅35重量份;氧化铝18重量份;氧化铁1.15重量份;氧化钙0.61重量份;氧化锂0.4重量份;三氧化二铝0.4重量份;三氧化二硼0.5重量份;氧化铬0.5重量份;2-羟基-2-甲基-1-苯基丙酮2.7重量份,氧化铌锶钡15重量份,硅烷偶联剂8.5重量份,酒石酸锑钾8.5重量份。
一种高绝缘电子陶瓷材料及其生产工艺,其特征在于,包括以下步骤:
S1:配料,按照配料单,准确称取钛酸锶、氧化硅、氧化铝、氧化铁、氧化钙、氧化镁、氧化钾、氧化钠、氧化钛原料,混合得混合物A;
S2:粉碎,将混合物A送入破碎机进行粉碎;
S3:除铁,将球磨后的混合物A,原料球磨之后过筛除铁;
S4:风干干燥,对混合物A进行风干,粉料含水量≤3%以下,颗粒级配为30能过,粉料比重为0.85g/cm3以上,其中量杯167g,确保原料的干湿均匀,粉料的含铁量经高强磁铁棒检测无吸铁现象;
S5:2-羟基-2-甲基-1-苯基丙酮、氧化铌锶钡、硅烷偶联剂和酒石酸锑钾加入到混合物A中,进行搅拌,得到混合物B;
S6:榨泥,将混合物B进行二次球磨后,将混合物B进行榨泥;
S7:造粒,混合物B投入造粒机进行造粒;
S8:烧成,成型,将混合物B在马弗炉中煅烧;
S9:烧成后的高绝缘电子陶瓷进行分检、包装。
所述步骤S1中的原料通过以下方式混合:将原料加入混料机中混料,转速为200~250r/min,混料温度为30~35℃,所述混料的时间为0.5~1h。
所述步骤S3中过筛除铁通过以下方式进行:粉料过80目振动筛并过2万高磁的除铁器。
所述步骤S5中搅拌转速为300~350r/min,搅拌时间为10~20min。
所述步骤S8中的烧成通过以下方式进行:烧成温度300~450℃下煅烧8~18min,然后在550~650℃下煅烧15~30min,最后在700~820℃下煅烧1~2h。
本发明与现有技术相比,具有以下有益效果:
(1)本发明通过将钛酸锶、2-羟基-2-甲基-1-苯基丙酮、氧化铌锶钡、硅烷偶联剂、酒石酸锑钾加入原材料中,并将它们分阶段、分层次混料,球磨、成型、干燥,获得所需改性电子陶瓷材料,该改性电子陶瓷材具备较好的温度稳定性能和韧性,可使得高绝缘电子陶瓷具有更强的物理稳固性,避免了使用高绝缘电子陶瓷时,高绝缘电子陶瓷未加入2-羟基-2-甲基-1-苯基丙酮、氧化铌锶钡、硅烷偶联剂,难以避免电子陶瓷在使用过程中易碎,脆性较大的问题。
(2)本发明通过准确称取钛酸锶、氧化硅、氧化铝、氧化铁、氧化钙、氧化镁、氧化钾、氧化钠、氧化钛原料,混合得混合物A;球磨,将混合物A送入球磨机进行球磨;除铁,将球磨后的混合物A,原料球磨之后过筛除铁;喷雾,对混合物A进行喷雾,粉料含水量≤3%以下,颗粒级配为30能过,粉料比重为0.85g/cm3以上,其中量杯167g,确保原料的干湿均匀,粉料的含铁量经高强磁铁棒检测无吸铁现象;2-羟基-2-甲基-1-苯基丙酮、氧化铌锶钡、硅烷偶联剂和酒石酸锑钾加入到混合物A中,进行搅拌,得到混合物B;榨泥,将混合物B进行二次球磨后,将混合物B进行榨泥,避免了制造高绝缘电子陶瓷时,由于高绝缘电子陶瓷制造只进行一次球磨,未在加入固化原料后进行进一步球磨,一次球磨难以保证原料的稳定性,未对原料进行榨泥,难以保证原料的充分相融和。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明提供如下技术方案:
实施例一:
一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶15重量份~35重量份;氧化硅15重量份~35重量份;氧化铝18重量份~39重量份;氧化铁0.4重量份~1.2重量份;氧化钙0.5重量份~0.61重量份;氧化锂0.4重量份~1.2重量份;三氧化二铝0.4重量份~1.2重量份;三氧化二硼0.5重量份~0.61重量份;氧化铬0.5重量份~0.61重量份;2-羟基-2-甲基-1-苯基丙酮0.8重量份~2.7重量份,氧化铌锶钡5重量份~15重量份,硅烷偶联剂3.5重量份~8.5重量份,酒石酸锑钾3.5重量份~8.5重量份。
实施例二:
一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶35重量份;氧化硅20重量份;氧化铝39重量份;氧化铁0.45重量份;氧化钙0.5重量份;氧化锂1.2重量份;三氧化二铝1.2重量份;0.61重量份;三氧化二硼0.61重量份;氧化铬0.61重量份2-羟基-2-甲基-1-苯基丙酮0.8重量份,氧化铌锶钡5重量份,硅烷偶联剂3.5重量份,酒石酸锑钾3.5重量份。
实施例三:
一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶25重量份;氧化硅35重量份;氧化铝18重量份;氧化铁1.15重量份;氧化钙0.61重量份;氧化锂0.4重量份;三氧化二铝0.4重量份;三氧化二硼0.5重量份;氧化铬0.5重量份;2-羟基-2-甲基-1-苯基丙酮2.7重量份,氧化铌锶钡15重量份,硅烷偶联剂8.5重量份,酒石酸锑钾8.5重量份。
一种高绝缘电子陶瓷材料及其生产工艺,其特征在于,包括以下步骤:
S1:配料,按照配料单,准确称取钛酸锶、氧化硅、氧化铝、氧化铁、氧化钙、氧化镁、氧化钾、氧化钠、氧化钛原料,混合得混合物A;
S2:粉碎,将混合物A送入破碎机进行粉碎;
S3:除铁,将球磨后的混合物A,原料球磨之后过筛除铁;
S4:风干干燥,对混合物A进行风干,粉料含水量≤3%以下,颗粒级配为30能过,粉料比重为0.85g/cm3以上,其中量杯167g,确保原料的干湿均匀,粉料的含铁量经高强磁铁棒检测无吸铁现象;
S5:2-羟基-2-甲基-1-苯基丙酮、氧化铌锶钡、硅烷偶联剂和酒石酸锑钾加入到混合物A中,进行搅拌,得到混合物B;
S6:榨泥,将混合物B进行二次球磨后,将混合物B进行榨泥;
S7:造粒,混合物B投入造粒机进行造粒;
S8:烧成,成型,将混合物B在马弗炉中煅烧;
S9:烧成后的高绝缘电子陶瓷进行分检、包装。
所述步骤S1中的原料通过以下方式混合:将原料加入混料机中混料,转速为200~250r/min,混料温度为30~35℃,所述混料的时间为0.5~1h。
所述步骤S3中过筛除铁通过以下方式进行:粉料过80目振动筛并过2万高磁的除铁器。
所述步骤S5中搅拌转速为300~350r/min,搅拌时间为10~20min。
所述步骤S8中的烧成通过以下方式进行:烧成温度300~450℃下煅烧8~18min,然后在550~650℃下煅烧15~30min,最后在700~820℃下煅烧1~2h。
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下。由语句“包括一个......限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素”。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (8)
1.一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:
SrTiO3钛酸锶15重量份~35重量份;氧化硅15重量份~35重量份;氧化铝18重量份~39重量份;氧化铁0.4重量份~1.2重量份;氧化钙0.5重量份~0.61重量份;氧化锂0.4重量份~1.2重量份;三氧化二铝0.4重量份~1.2重量份;三氧化二硼0.5重量份~0.61重量份;氧化铬0.5重量份~0.61重量份;2-羟基-2-甲基-1-苯基丙酮0.8重量份~2.7重量份,氧化铌锶钡5重量份~15重量份,硅烷偶联剂3.5重量份~8.5重量份,酒石酸锑钾3.5重量份~8.5重量份。
2.根据权利要求1所述的一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶35重量份;氧化硅20重量份;氧化铝39重量份;氧化铁0.45重量份;氧化钙0.5重量份;氧化锂1.2重量份;三氧化二铝1.2重量份;0.61重量份;三氧化二硼0.61重量份;氧化铬0.61重量份2-羟基-2-甲基-1-苯基丙酮0.8重量份,氧化铌锶钡5重量份,硅烷偶联剂3.5重量份,酒石酸锑钾3.5重量份。
3.根据权利要求1所述的一种高绝缘电子陶瓷材料,其特征在于,包括以下重量份的原料:SrTiO3钛酸锶25重量份;氧化硅35重量份;氧化铝18重量份;氧化铁1.15重量份;氧化钙0.61重量份;氧化锂0.4重量份;三氧化二铝0.4重量份;三氧化二硼0.5重量份;氧化铬0.5重量份;2-羟基-2-甲基-1-苯基丙酮2.7重量份,氧化铌锶钡15重量份,硅烷偶联剂8.5重量份,酒石酸锑钾8.5重量份。
4.一种高绝缘电子陶瓷材料及其生产工艺,其特征在于,包括以下步骤:
S1:配料,按照配料单,准确称取钛酸锶、氧化硅、氧化铝、氧化铁、氧化钙、氧化镁、氧化钾、氧化钠、氧化钛原料,混合得混合物A;
S2:粉碎,将混合物A送入破碎机进行粉碎;
S3:除铁,将球磨后的混合物A,原料球磨之后过筛除铁;
S4:风干干燥,对混合物A进行风干,粉料含水量≤3%以下,颗粒级配为30能过,粉料比重为0.85g/cm3以上,其中量杯167g,确保原料的干湿均匀,粉料的含铁量经高强磁铁棒检测无吸铁现象;
S5:2-羟基-2-甲基-1-苯基丙酮、氧化铌锶钡、硅烷偶联剂和酒石酸锑钾加入到混合物A中,进行搅拌,得到混合物B;
S6:榨泥,将混合物B进行二次球磨后,将混合物B进行榨泥;
S7:造粒,混合物B投入造粒机进行造粒;
S8:烧成,成型,将混合物B在马弗炉中煅烧;
S9:烧成后的高绝缘电子陶瓷进行分检、包装。
5.根据权利要求4所述的一种高绝缘电子陶瓷材料生产工艺,其特征在于:所述步骤S1中的原料通过以下方式混合:将原料加入混料机中混料,转速为200~250r/min,混料温度为30~35℃,所述混料的时间为0.5~1h。
6.根据权利要求4所述的一种高绝缘电子陶瓷材料生产工艺,其特征在于:所述步骤S3中过筛除铁通过以下方式进行:粉料过80目振动筛并过2万高磁的除铁器。
7.根据权利要求4所述的一种高绝缘电子陶瓷材料生产工艺,其特征在于:所述步骤S5中搅拌转速为300~350r/min,搅拌时间为10~20min。
8.根据权利要求4所述的一种高绝缘电子陶瓷材料生产工艺,其特征在于:所述步骤S8中的烧成通过以下方式进行:烧成温度300~450℃下煅烧8~18min,然后在550~650℃下煅烧15~30min,最后在700~820℃下煅烧1~2h。
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Application publication date: 20191224 |