CN110590395A - 一种轻质多孔高q微波介质陶瓷及其制备方法 - Google Patents

一种轻质多孔高q微波介质陶瓷及其制备方法 Download PDF

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CN110590395A
CN110590395A CN201910948300.5A CN201910948300A CN110590395A CN 110590395 A CN110590395 A CN 110590395A CN 201910948300 A CN201910948300 A CN 201910948300A CN 110590395 A CN110590395 A CN 110590395A
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岳振星
陈雨谷
骆宇
郭蔚嘉
卞帅帅
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Abstract

本发明属于微波介质陶瓷技术领域，尤其涉及一种轻质多孔高Q微波介质陶瓷及其制备方法，通过将微波介质陶瓷粉体和造孔剂按一定比例在酒精中混合球磨，干燥后过筛、干压成型、烧结，可得到气孔率为7.6％–28.3％、介电常数为56.2–82.2、Q×f值为8600–10000GHz、谐振频率温度系数为16.3–21.1ppm/℃的轻质高Q的Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54微波介质陶瓷。本发明的制备方法能在保持微波介质陶瓷的谐振频率温度系数基本不变的前提下调控介电常数和Q×f值。

Description

一种轻质多孔高Q微波介质陶瓷及其制备方法
技术领域
本发明属于微波介质陶瓷技术领域，尤其涉及一种轻质多孔高Q微波介质陶瓷及其制备方法。
背景技术
微波介质陶瓷作为一种新型电子材料，具有损耗低、介电常数可调、温度稳定性好等优点，广泛用于制作介质基片、介质天线、谐振器、滤波器等微波元器件，是现代微波通讯的关键材料。为了适合各个领域的应用，需要调控微波介质陶瓷的介电常数，提高Q×f值，使谐振频率温度系数近零。常用的调控方式是掺杂一定量的元素来改变微波性能，但是掺杂元素对介电常数、Q×f值和谐振频率温度系数都有影响，调控这三者同时达到理想的性能相当困难。因此，改变传统的调控方式使其更简便具有重要的意义。
传统的微波介质陶瓷都具有较高的致密度，认为降低致密度可能降低Q×f值。但是微米级气孔的引入会改变介质陶瓷内部的电磁场分布，有可能提高材料的Q值，并且随着可穿戴设备的发展，轻质高Q的微波介质陶瓷在轻质化应用方面具有极大的应用前景。
发明内容
发明要解决的技术问题
本发明的目的是提供一种轻质多孔高Q微波介质陶瓷及其制备方法，利用造孔剂燃烧后留下气孔得到多孔陶瓷。
用于解决技术问题的方法
针对上述问题，本发明提出了一种轻质多孔高Q的Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/ 3Ti18O54微波介质陶瓷，其气孔率为7.6％–28.3％、介电常数为56.2–82.2、Q×f值为8600–10000GHz、谐振频率温度系数为16.3–21.1ppm/℃。
根据本发明的第二方面，提供一种轻质多孔高Q微波介质陶瓷的制备方法，其包括如下步骤：(1)将微波介质陶瓷粉体和造孔剂按质量比10:(0.2–1.4)在酒精中混合球磨；(2)干燥后过筛；(3)干压成型；(4)在1250–1350℃烧结。
一种实施方式为，造孔剂选自聚合物微球。
一种实施方式为，造孔剂为聚甲基丙烯酸甲酯微球。
一种实施方式为，造孔剂微球直径在4–35μm之间。
一种实施方式为，烧结温度范围为1250–1350℃。
本发明的有益效果
(1)本发明首次将气孔结构引入微波介质陶瓷中调控微波性能，降低了致密度的同时提高了Q×f值，制备得到了轻质高Q的微波介质陶瓷，有利于其在可穿戴设备方面的轻质化应用。(2)可在谐振频率温度系数近零的前提下调控介电常数和Q×f值，粉体的成分不需要改变，与传统的掺杂元素调控性能相比更加简便高效。(3)气孔尺寸可由造孔剂尺寸调控，气孔率可由造孔剂添加量调控。
从以下示例性实施方案的描述中，本发明的进一步特征将变得显而易见。
附图说明
图1是直径为4μm的聚甲基丙烯酸甲酯微球的微观形貌。
图2是烧结后的多孔Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54陶瓷的微观形貌，使用直径为8μm的聚甲基丙烯酸甲酯微球为造孔剂。
图3是图2的断裂截面的微观形貌。
图4是烧结后的多孔Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54陶瓷的微观形貌，使用直径为13μm的聚甲基丙烯酸甲酯微球为造孔剂。
具体实施方式
以下对本公开的一个实施方式具体地说明，但本公开并非限定于此。
本发明开发了一种轻质多孔高Q微波介质陶瓷的制备方法，利用造孔剂燃烧后留下气孔得到多孔陶瓷。此方法可得到气孔率为7.6％–28.3％、介电常数为56.2–82.2、Q×f值为8600–10000GHz、谐振频率温度系数为16.3–21.1ppm/℃的轻质Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54微波介质陶瓷。将多孔结构引入微波介质陶瓷中不仅没有降低Q×f值，反而使其提高了，具有重要的意义。同时，谐振频率温度系数基本不随气孔率发生变化，简化了调控过程。本发明能够制备轻质高Q的微波介质陶瓷，同时提出了引入多孔结构这一新的调控微波性能的方法。
实施例
通过实施例更详细地描述本发明，但本发明不限于下述实施例。
实施例1
(1)将Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54陶瓷粉体与直径为13μm的聚甲基丙烯酸甲酯微球按质量比10:0.5混合球磨2h。
(2)干燥后过筛，压制成直径10mm，高度6–6.3mm的圆柱。
(3)将圆柱样品3℃/min升温到600℃保温2h，继续5℃/min升温到1300℃保温2h进行烧结。
得到的样品气孔率为15.5％，用网络分析仪测得介电常数为73.6，Q×f值为9500GHz，谐振频率温度系数为18.0ppm/℃。
不添加造孔剂的样品气孔率为2.8％，介电常数为91.36，Q×f值为8400GHz，谐振频率温度系数为14.6ppm/℃。
实施例2
(1)将Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54陶瓷粉体与直径为35μm的聚甲基丙烯酸甲酯微球按质量比10:1.08混合球磨2h。
(2)干燥后过筛，压制成直径10mm，高度6–6.3mm的圆柱。
(3)将圆柱样品3℃/min升温到600℃保温2h，继续5℃/min升温到1300℃保温2h进行烧结。
得到的样品气孔率为28.3％，用网络分析仪测得介电常数为56.2，Q×f值为8900GHz，谐振频率温度系数为16.3ppm/℃。
实施例3
(1)将Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54陶瓷粉体与直径为8μm的聚甲基丙烯酸甲酯微球按质量比10:1.045混合球磨2h。
(2)干燥后过筛，压制成直径10mm，高度6–6.3mm的圆柱。
(3)将圆柱样品3℃/min升温到600℃保温2h，继续5℃/min升温到1300℃保温2h进行烧结。
得到的样品气孔率为24.3％，用网络分析仪测得介电常数为62.6，Q×f值为10000GHz，谐振频率温度系数为19.1ppm/℃。
实施例4
(1)将Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54陶瓷粉体与直径为4μm的聚甲基丙烯酸甲酯微球按质量比10:0.2混合球磨2h。
(2)干燥后过筛，压制成直径10mm，高度6–6.3mm的圆柱。
(3)将圆柱样品3℃/min升温到600℃保温2h，继续5℃/min升温到1300℃保温2h进行烧结。
得到的样品气孔率为7.6％，用网络分析仪测得介电常数为82.2，Q×f值为8800GHz，谐振频率温度系数为18.4ppm/℃。
工业实用性
本发明能得到一种气孔率在30％以内的轻质多孔高Q微波介质陶瓷，其孔结构可调，气孔尺寸随造孔剂尺寸改变，气孔率随造孔剂添加量改变。气孔的引入使微波介质陶瓷的介电常数下降，Q×f值上升，谐振频率温度系数基本不变。适合用于制作轻质微波元器件。
此实施例仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。

Claims (6)

1.一种轻质多孔高Q的Ba4[(Sm0.3Nd0.7)0.9Bi0.1]28/3Ti18O54微波介质陶瓷，其特征在于，气孔率为7.6％–28.3％、介电常数为56.2–82.2、Q×f值为8600–10000GHz、谐振频率温度系数为16.3–21.1ppm/℃。
2.一种轻质多孔高Q微波介质陶瓷的制备方法，其特征在于，所述方法包括如下步骤：(1)将微波介质陶瓷粉体和造孔剂按质量比10:(0.2–1.4)在酒精中混合球磨；(2)干燥后过筛；(3)干压成型；(4)在1250–1350℃烧结。
3.根据权利要求2所述方法，其中，造孔剂选自聚合物微球。
4.根据权利要求3所述方法，其中，造孔剂为聚甲基丙烯酸甲酯微球。
5.根据权利要求3或4所述方法，其中，造孔剂微球直径在4–35μm之间。
6.根据权利要求2-5中任一项所述方法，其中，烧结温度范围为1250–1350℃。
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Citations (3)

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CN101560090A (zh) * 2009-05-21 2009-10-21 厦门大学 硅酸镁陶瓷透波材料及其制备方法
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CN101560090A (zh) * 2009-05-21 2009-10-21 厦门大学 硅酸镁陶瓷透波材料及其制备方法
KR20110083351A (ko) * 2010-01-14 2011-07-20 한국과학기술연구원 저온소성용 마이크로파 유전체 세라믹 조성물

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