CN110573647A - Evaporation source and film forming apparatus - Google Patents
Evaporation source and film forming apparatus Download PDFInfo
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- CN110573647A CN110573647A CN201880027546.2A CN201880027546A CN110573647A CN 110573647 A CN110573647 A CN 110573647A CN 201880027546 A CN201880027546 A CN 201880027546A CN 110573647 A CN110573647 A CN 110573647A
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- evaporation source
- nozzles
- top surface
- opening
- nozzle
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- 238000001704 evaporation Methods 0.000 title claims abstract description 167
- 239000000463 material Substances 0.000 claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 46
- 239000000126 substance Substances 0.000 claims abstract description 16
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 75
- 230000015572 biosynthetic process Effects 0.000 claims description 38
- 239000000758 substrate Substances 0.000 description 44
- 238000001816 cooling Methods 0.000 description 41
- 239000011521 glass Substances 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000011364 vaporized material Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 5
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
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- 229910052709 silver Inorganic materials 0.000 description 4
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- 229910052582 BN Inorganic materials 0.000 description 3
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- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
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- 229910000990 Ni alloy Inorganic materials 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Abstract
The invention relates to an evaporation source having an evaporation source container, a heating device, a first heat shield and a second heat shield. The evaporation source container includes a container body having a top surface and accommodating a thin film material, and a plurality of nozzles connected to the container body and arranged in a uniaxial direction so as to protrude from the top surface, the nozzles having openings for discharging a vaporized substance of the thin film material. The heating device heats the container body. The first heat shield plate is disposed opposite to the top surface with a distance therebetween and has a plurality of first opening portions having a first opening area larger than the opening portions of the nozzles through which the nozzles penetrate, the opening portions being provided for each of the plurality of nozzles. The second heat-shielding plate is fixed to the plurality of nozzles between the vessel body and the first heat-shielding plate, is disposed apart from the top surface, faces the nozzles, and has a second opening portion through which the nozzles penetrate, and has an outer shape larger than the first opening region.
Description
Technical Field
The present invention relates to an evaporation source that vaporizes a thin film material to release a vaporized material, and a film deposition apparatus having the evaporation source.
Background
For the deposition of a thin film used in an electronic device such as an organic EL display device, a vacuum deposition apparatus is used, which includes: the thin film material is heated and vaporized, and a vaporized substance (vapor) of the thin film material is deposited on a film formation object such as a glass substrate. In recent years, as an evaporation source capable of coping with an increase in the size of a film formation object, a line source in which a plurality of nozzles for discharging a vaporized substance of a thin film material are arranged in a row has been proposed (for example, see patent document 1). In such an evaporation source, a heat shielding member such as a reflector is provided so that radiant heat generated to heat the film material is not radiated to the outside of the evaporation source.
the line source type evaporation source has an elongated rectangular parallelepiped shape, and is configured such that a plurality of nozzles are arranged in a row and connected to an evaporation source container that accommodates a film material. The object to be film-formed is disposed to face a surface of a nozzle on which the linear evaporation source is disposed, and a vaporized substance of a thin film material heated by a heating device such as a heater is discharged from the nozzle and is adhered to the object to be film-formed, thereby forming a film. The heat shielding member is disposed between the film formation object and the evaporation container, but the heat shielding member is not disposed in the vicinity of the nozzle.
Documents of the prior art
patent document
patent document 1: japanese patent laid-open No. 2012 and 146658.
Disclosure of Invention
Problems to be solved by the invention
In the evaporation source configured as described above, radiant heat from the heater or the evaporation source heated by the heater is radiated to the outside of the evaporation source through the vicinity of the nozzle where the heat shielding member is not disposed, and reaches the object to be film-formed, which increases the temperature of the object to be film-formed. When the temperature of the object to be film-formed is high, there are the following problems: the vaporized material that has reached the thin film material to be deposited moves around the object and does not adhere well, and is then re-evaporated and does not form a film well. Further, when a thin film is formed on a film formation target through a metal mask, there is a problem that the metal mask expands due to radiant heat, and a thin film having a desired pattern cannot be obtained. In particular, when a thin film having a high-definition pattern is formed using a metal mask, the display characteristics are greatly affected when, for example, a target to be formed is a substrate constituting a display device, because the position of a film formation pattern is shifted by the expansion of the metal mask.
In view of the above-described circumstances, an object of the present invention is to provide an evaporation source capable of reducing radiant heat radiated from the evaporation source, and a film forming apparatus including the evaporation source.
Means for solving the problems
In order to achieve the above object, an evaporation source according to one embodiment of the present invention includes an evaporation source container, a heating device, a first heat shield, and a second heat shield.
The evaporation source container includes: a container body having a top surface and housing a film material; and a plurality of nozzles that are connected to the container body and protrude from the top surface and are arranged in a uniaxial direction, the nozzles having openings through which vaporized substances of the film material are discharged.
the heating device heats the container body.
The first heat shield plate is disposed to face the top surface so as to be spaced apart from the top surface, and has a plurality of first opening portions having a first opening area larger than the opening portion of the nozzle through which each of the plurality of nozzles passes, the opening portion being provided in correspondence with each of the plurality of nozzles.
The second heat-shielding plate is fixed to the plurality of nozzles between the vessel body and the first heat-shielding plate, is disposed to face the top surface so as to be separated from the top surface, and has a second opening portion through which the nozzles penetrate, and has an outer shape larger than the first opening region.
according to the configuration of the present invention, the second heat shield plate is configured to have the outer shape larger than the first opening region in correspondence with the first opening portion of the first heat shield plate, and therefore, among the radiant heat generated by heating by the heating device, the radiant heat that cannot be shielded by the first heat shield plate through the first opening portion can be reduced by the second heat shield plate. Thereby, the radiant heat radiated from the evaporation source can be reduced. Therefore, heating of a film formation target for forming a thin film material by radiant heat from the evaporation source can be suppressed, and favorable film formation can be performed. In addition, when the film is formed through the metal mask, expansion due to heating of the metal mask can be suppressed, and the film can be formed into a high-definition pattern.
The second heat shield plate may be fixed to the nozzle in a point contact manner.
According to such a configuration, since the contact area between the nozzle and the second heat shielding plate can be reduced, cooling of the nozzle by the second heat shielding plate can be suppressed. This can prevent the nozzle from being clogged while suppressing the cooling of the vaporized material passing through the thin film material in the nozzle.
The first opening may have a shape having a longitudinal direction in the uniaxial direction.
With this configuration, even when the container body expands due to heating by the heating device, the position of the nozzle connected to the container body shifts as the container body stretches in the uniaxial direction, and the nozzle can be always positioned in the first opening portion.
The evaporation source may further include a third heat shield plate that is disposed between the evaporation source container and the second heat shield plate so as to face the top surface, and that has a plurality of third openings having a third opening area larger than the openings of the nozzles that are provided corresponding to the plurality of nozzles and through which the nozzles penetrate.
In this manner, the third heat shield plate can efficiently reduce the radiant heat.
The first heat shield may have an outer shape surrounding the evaporation source container, the evaporation source container may have a top surface portion and a bottom surface portion opposed to the top surface portion, the top surface portion may have the first opening portion, and the container body may be supported by the bottom surface portion so as to be movable in the uniaxial direction in accordance with an amount of expansion of the container body in the uniaxial direction due to thermal expansion of the container body by heating of the heating device.
According to such a configuration, even if the container body is expanded by thermal expansion, the evaporation source container moves in the uniaxial direction by the movable support portion in accordance with the expansion amount, and therefore, no deformation occurs in the container body. This makes it possible to make the discharge amount of the vaporized material of the thin film material discharged from the evaporation source uniform in the plane. In film formation using such an evaporation source, a thin film having a uniform thickness in a plane can be formed.
A film forming apparatus according to an embodiment of the present invention includes a storage unit and an evaporation source.
The storage section can store a film formation object.
The evaporation source includes: an evaporation source container having a container body having a top surface and accommodating a thin film material, and a plurality of nozzles connected to the container body and protruding from the top surface and arranged in a uniaxial direction, the nozzles having an opening portion for discharging a vapor substance of the thin film material to the film formation object; a heating device for heating the container body; a first heat shield plate that is disposed opposite to the top surface so as to be spaced apart from the top surface and that has a plurality of first opening portions having a first opening area larger than opening portions of the nozzles that are provided corresponding to the plurality of nozzles and through which the nozzles penetrate; and a second heat shield plate which is fixed to the plurality of nozzles between the vessel body and the first heat shield plate, is disposed to face the top surface so as to be separated from the top surface, and has a second opening portion through which the nozzles penetrate, and the second opening portion has an outer shape larger than the first opening region.
Effects of the invention
As described above, according to the present invention, an evaporation source and a film forming apparatus capable of reducing radiant heat radiated from the evaporation source can be obtained.
Drawings
Fig. 1 is a schematic cross-sectional view of a film deposition apparatus according to a first embodiment of the present invention.
Fig. 2 is a schematic plan view of an evaporation source provided in the film forming apparatus.
Fig. 3 is a partially enlarged perspective view of the vicinity of the nozzle of the evaporation source.
Fig. 4 is a partially enlarged perspective view of the evaporation source shown in fig. 3, in the vicinity of the nozzle, as viewed from the bottom surface toward the top surface of the water-cooling plate.
Fig. 5 is a partial plan view and a corresponding sectional view showing the state before and after heating of the vicinity of the nozzle of the evaporation source.
Fig. 6 is a partially enlarged perspective view and a partially enlarged cross-sectional view of the vicinity of a nozzle of an evaporation source according to a second embodiment of the present invention.
Fig. 7 is a partial plan view and a corresponding sectional view showing the state before and after heating in the vicinity of a nozzle of a conventional evaporation source.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each drawing, the X-axis direction and the Y-axis direction indicate horizontal directions orthogonal to each other, and the Z-axis direction indicates a height direction orthogonal to these directions.
(embodiment 1)
[ Structure of film Forming apparatus ]
Fig. 1 is a schematic cross-sectional view of a film deposition apparatus according to an embodiment of the present invention.
The film forming apparatus 1 includes a vacuum chamber 2 as a storage portion, a line source type evaporation source 3 disposed on the bottom surface side in the vacuum chamber 2, a substrate holder 8 as a holding portion for holding a film forming object, a vacuum exhaust system 7, a film thickness sensor 6, a temperature measurement sensor 10, a controller 4, and a power supply 5.
The vacuum chamber 2 accommodates a glass substrate 9 to be film-formed.
The substrate holder 8 is disposed on the top surface side inside the vacuum chamber 2. The substrate holder 8 holds a glass substrate 9 to be film-formed with a surface (film-forming surface) 9a to be film-formed facing downward. The line source type evaporation source 3 has a substantially rectangular parallelepiped outer shape having a longitudinal direction in the X-axis direction. The substrate holder 8 is configured to be movable in a direction (Y-axis direction) orthogonal to the longitudinal direction (X-axis direction) of the evaporation source 3.
The evaporation source 3 accommodates a thin film material (evaporation material) 36, heats and vaporizes the thin film material 36, and emits a vaporized substance (vapor) of the thin film material 36. Details of the evaporation source 3 will be described later.
The vacuum exhaust system 7 is connected to the vacuum chamber 2. The vacuum exhaust system 7 vacuums the inside of the vacuum chamber 2 to form a vacuum atmosphere suitable for film formation.
In the film forming apparatus 1, while maintaining the vacuum atmosphere in the vacuum chamber 2, the glass substrate 9 is moved while being held by the substrate holder 8, and the vaporized substance of the thin-film material 36 is released from the evaporation source 3 and adheres to the film formation target surface 9a of the glass substrate 9, thereby forming a desired thin film on the glass substrate 9.
In addition, although the glass substrate 9 is configured to be movable in the present embodiment, the evaporation source 3 may be configured to be movable in the Y-axis direction by fixing the position of the glass substrate 9. Further, the film may be formed in a state in which the glass substrate 9 and the evaporation source 3 are fixed without moving the glass substrate 9 or the evaporation source 3. In the present embodiment, a description is given of an example in which a glass substrate is a target for film formation, but the present invention is not limited thereto, and a flexible film substrate or the like may be used.
The temperature measurement sensor 10 is connected to the controller 4, and measures the temperature of the evaporation source housing 35 of the evaporation source 3 described later.
The film thickness sensor 6 measures the amount of vapor (vaporized substance) from the evaporation source 3, and controls the thickness (or film formation rate) of the thin film formed on the glass substrate 9. The film thickness sensor 6 is disposed so as not to prevent the vaporized substance of the thin film material emitted from the evaporation source 3 from reaching the glass substrate 9. The output of the film thickness sensor 6 is input to the controller 4.
The controller 4 adjusts the amount of electricity supplied to a heater 34 as a heating device provided in the evaporation source 3 described later, so that the evaporation source housing 35 as an evaporation source container has a desired temperature, and controls the amount of vapor (vaporized material) to be released or the film formation rate to have a desired value, based on the measurement results of the film thickness sensor 6 and the temperature measurement sensor 10.
Next, the evaporation source 3 will be explained.
[ Structure of Evaporation Source ]
The evaporation source 3 will be described with reference to fig. 1 to 4.
Fig. 2 is a schematic plan view of the evaporation source 3. Fig. 3 is a partially enlarged perspective view of the evaporation source 3 near the nozzle. Fig. 4 a is a perspective view of the evaporation source 3 in fig. 3 near the nozzle, and is a partially enlarged perspective view seen from the bottom surface 313 of the water-cooling plate 31 described later toward the top surface 310. Fig. 4B is a further enlarged perspective view of a in fig. 4.
As shown in fig. 1, the evaporation source 3, which is an evaporation source of a line source type, has an evaporation source housing 35 as an evaporation source container, a heater 34 as a heating device, a water-cooled plate 31 as a first heat shield, a following reflector 33 as a second heat shield, a reflector 32 as a third heat shield, a fixed support 391, and a movable support 392.
The heater 34 heats the evaporation source housing 35. The thin film material 36 contained in the evaporation source case 35 is heated by the heater 34 to become a vaporized substance of the thin film material 36. The heater 34 is disposed between the evaporation source casing 35 and the reflector 32 so as to surround the entire evaporation source casing 35. The heater 34 is typically constituted by a resistance heating wire, and may be constituted by an induction heating coil.
The evaporation source casing 35 has a container body 351 and a plurality of nozzles 37.
Container body 351 has a top surface 352 that receives film material 36. The container body 351 has a rectangular parallelepiped shape, and the top surface 352 thereof is a surface parallel to the XY plane. The evaporation source casing 35 and the substrate holder 8 are provided so that the top surface 352 is separated from the surface 9a to be film-formed of the glass substrate 9 and arranged to face each other in the Z-axis direction. The container body 351 is made of a material having high thermal conductivity, such as metal or graphite.
The plurality of nozzles 371-377 are disposed to protrude from the top surface 352 of the container body 351 and are connected to the container body 351. The plurality of nozzles 371 to 377 are arranged in a row in a uniaxial direction (X-axis direction in the drawing). In fig. 2, the nozzle 371, the nozzle 372, the nozzle 373, the nozzle 374, the nozzle 375, the nozzle 376, and the nozzle 377 are arranged in this order from left to right. The nozzles 371 to 377 are collectively referred to as the nozzles 37, and 371 to 377 are used as the reference numerals as necessary.
The nozzle 37 has an opening (vaporized material discharge port) 380 through which the vaporized material of the thin film material 36 is discharged. The vapor of the thin-film material 36 generated in the container body 351 is released from the opening 380 into the vacuum chamber 2 outside the evaporation source 3.
The plurality of nozzles 371 to 377 are connected to a common container main body 351. The nozzle 37 may be made of tantalum, molybdenum, or carbon. The container body 351 has an elongated rectangular parallelepiped shape having a longitudinal direction in the X-axis direction of the array nozzle 37. The nozzle 37 has a cylindrical shape having a substantially circular cross section perpendicular to the Z-axis direction, but the shape of the nozzle 37 is not limited to this.
The water-cooled plate (first heat shielding plate) 31 is a member having a heat shielding function for performing water-cooled cooling. The water cooling plate 31 is provided with a water passage such as a water cooling pipe in which water flows. The water-cooling plate 31 is provided to absorb and reduce radiant heat radiated from the heater 34 and the evaporation source housing 35 heated by the heater 34 to the glass substrate 9.
The water-cooled plate 31 has an outer shape of a rectangular parallelepiped shape including a top surface portion 310, a bottom surface portion 313 facing the top surface portion 310, and a side surface portion 314, and the water-cooled plate 31 constitutes the outer shape of the evaporation source 3. The water-cooling plate 31 is configured to surround the evaporation source housing 35, the heater 34, the reflector 32, and the follower reflector 33. The top surface 310 of the water-cooling plate 31 is disposed substantially parallel to the XY plane, and is disposed apart from and facing the top surface 352 of the container main body 351 of the evaporation source housing 35.
A plurality of first openings 3111 to 3117 are provided in the top surface portion 310 of the water-cooling plate (first heat-shielding plate) 31. The first opening 3111 is provided corresponding to the nozzle 371, the first opening 3112 is provided corresponding to the nozzle 372, the first opening 3113 is provided corresponding to the nozzle 373, the first opening 3114 is provided corresponding to the nozzle 374, the first opening 3115 is provided corresponding to the nozzle 375, the first opening 3116 is provided corresponding to the nozzle 376, and the first opening 3117 is provided corresponding to the nozzle 377. Hereinafter, the first openings 3111 to 3117 will be collectively referred to as the first openings 311, and the reference numerals 3111 to 3117 will be used as necessary for the description.
The first opening 311 is provided for each nozzle 37 so as to penetrate the corresponding nozzle 37. The first opening 311 has a first opening area larger than the opening 380 of the nozzle 37.
When the nozzle 37 is cooled, the vaporized material of the thin film material passing through the nozzle 37 is cooled in the nozzle 37, which may cause clogging of the nozzle 37. Therefore, in order to prevent the nozzle 37 from being clogged, the first opening 311 is provided so that the water-cooling plate 31 does not contact the nozzle 37.
the planar shape of the first opening 311 has a longitudinal direction in the X-axis direction, which is a direction in which the plurality of nozzles 37 are arranged. In the present embodiment, the first opening 311 has a substantially elliptical or oval shape having a major axis in the X-axis direction and a minor axis in the Y-axis direction, but the shape is not limited thereto, and may be, for example, a rectangular shape.
In the linear source type evaporation source 3 having an elongated rectangular parallelepiped shape and having a structure in which a plurality of nozzles 37 are arranged in a common container body 351 in a uniaxial direction, the container body 351 is thermally expanded and stretched in a longitudinal direction thereof (an arrangement direction of the nozzles) by heating by the heater 34 at the time of film formation, and accordingly, the position of the nozzle 37 connected to the container body 351 is shifted by several mm from the normal temperature. The first opening 311 is formed in consideration of the amount of positional deviation of the nozzle 37. That is, the first opening 311 has a shape having a longitudinal direction in the extending direction, that is, in the longitudinal direction of the container body 351, so that the nozzle 37 is positioned in the first opening 311 even if the position of the nozzle 37 is displaced due to thermal expansion.
In the container body 351 expanded by heating, the amount of positional displacement of the nozzle 37 caused by thermal expansion increases from the center portion toward the end portion in the longitudinal direction (X-axis direction) of the evaporation source casing 35.
Specifically, even if the evaporation source housing 35 is expanded by thermal expansion due to heating, the position of the nozzle 374 located at the center of the evaporation source housing 35 is almost the same as that before heating. In contrast, the positions of the nozzles 371 to 373 and 375 to 377 are changed by the thermal expansion of the evaporation source housing 35 caused by heating. Among these nozzles 371 to 373 and 375 to 377, the position change of the nozzles 371 and 377 located closest to both end portions of the evaporation source housing 35 is the largest, the position change of the nozzles 372 and 376 is the next largest, and the position change of the nozzles 373 and 375 is the smallest.
In this manner, the amount of positional deviation of the nozzle 37 caused by heating at the time of film formation differs depending on the position where the nozzle 37 is disposed. The plurality of first openings 311 are formed so that the nozzles 37 are positioned in the first openings 311 even if the positional deviation occurs due to thermal expansion, taking into account the difference in the amount of positional deviation due to the arrangement of the nozzles 37.
fig. 2 is a schematic plan view of the evaporation source 3 at normal temperature. As shown in fig. 2, in the evaporation source 3 before film formation, the nozzle 374 located at the center of the evaporation source housing 35 is located at the substantially center portion of the corresponding first opening section 3114. On the other hand, the nozzles 375 to 377 located on the right side in the drawing from the center of the evaporation source housing 35 are located on the left side of the corresponding first opening portions 3115 to 3117. On the other hand, the nozzles 371 to 373 located on the left side in the drawing from the center of the evaporation source housing 35 are located on the right side of the corresponding first opening portions 3111 to 3113.
When the evaporation source container 3 is heated during film formation and the evaporation source housing 35 expands due to thermal expansion, and the position of the nozzle 37 changes, the first opening portions 3111 to 3113 are arranged such that the nozzles 371 to 377 are located at substantially the center of the corresponding first opening portions 3111 to 3117.
In the present embodiment, the tip end portion of the nozzle 37 and the upper surface 31a of the top surface portion 310 of the water-cooled plate (first heat-shielding plate) 31 are located on the same XY plane, but the present invention is not limited thereto. For example, the nozzle 37 may protrude from the water-cooling plate 31 through the first opening 311 and from the upper surface 31 a.
The reflector (third heat shield) 32 is disposed so as to surround the heater 34 and the evaporation source housing 35. The reflector 32 is disposed between the water-cooled plate 31 and the heater 34. The top surface portion of the reflector 32 disposed to face the top surface portion 310 of the water-cooling plate 31 is disposed to face the top surface 352 of the container main body 35 separately from each other, and is disposed parallel to the XY plane.
The reflector 32 is constituted by stacking 3 monolithic reflectors 321, 322, and 323 separately from one another. The reflector 32 is provided to reduce radiant heat reaching the glass substrate 9 from the heater 34 and the evaporation source housing 35 heated by the heater 34. The provision of the plurality of individual reflectors 321 to 323 can reduce the amount of heat of radiation heat reaching the water cooling plate 31 in stages. The reflector can use aluminum, stainless steel, molybdenum, tantalum, and the like.
For example, when silver is used as a thin film material to generate vapor of silver, the silver needs to be heated to about 1100 ℃.
In contrast, by disposing the reflector 32 between the water-cooled plate 31 and the evaporation source housing 35, the radiant heat from the heater 34 and the evaporation source housing 35 heated by the heater 34 is reduced in stages to 900 ℃ by the single reflector 321, 500 ℃ by the single reflector 322, and 300 ℃ by the single reflector 323, for example, and the radiant heat is sufficiently reduced when reaching the water-cooled plate 31. By using a plurality of heat shielding units in this manner, radiant heat can be efficiently reduced.
The reflector 32 has a plurality of third openings 324 provided corresponding to the respective nozzles 37 and penetrated by the nozzles 37. The third opening portion 324 has a third opening area larger than the opening portion 380 of the nozzle 37. The third opening 324 is provided in consideration of the positional displacement of the nozzle 37 due to the thermal expansion of the container body 351, similarly to the first opening 311 of the water-cooling plate 31. Similarly to the water-cooled plate 31, the reflector 32 is provided with a third opening 324 so that the reflector 32 does not contact the nozzle 37 in order to prevent clogging of the nozzle. The third opening 324 has a substantially elliptical or oblong planar shape having a major axis in the X-axis direction and a minor axis in the Y-axis direction.
As shown in fig. 2, the length a of the evaporation source 3 in the longitudinal direction (X-axis direction) is, for example, about 30cm to 3m, and the number of nozzles 37 and the length a of the evaporation source 3 in the longitudinal direction are determined according to the size of a film formation object and a film formation pattern.
The first opening 311 provided in the top surface 310 of the water cooling plate 31 has a major axis c of 20mm and a minor axis e of 12 mm. The outer diameter d of the nozzle 37 is 10mm, and the pitch (the distance between the centers of adjacent nozzles) b of the nozzle 37 is 10mm to 25 mm.
The number and arrangement position of the nozzles 37 can be set arbitrarily. For example, the nozzles 37 may be arranged such that the pitch of the nozzles 37 arranged at the end of the evaporation source 3 becomes dense, thereby forming a uniform film on the substrate surface. In the present embodiment, for convenience of explanation, the number of nozzles 37 is set to 7, and the nozzles 37 are illustrated and described so that their pitches are equal.
As shown in FIGS. 1 to 4, the follower reflectors (second heat shield plates) 331 to 337 are respectively arranged so as to correspond to the plurality of nozzles 371 to 377 and fixed to the nozzles 371 to 377. The following reflectors 331 to 337 are separately provided from each other.
The follower reflector 331 is fixed to the nozzle 371, the follower reflector 332 is fixed to the nozzle 372, the follower reflector 333 is fixed to the nozzle 373, the follower reflector 334 is fixed to the nozzle 374, the follower reflector 335 is fixed to the nozzle 375, the follower reflector 336 is fixed to the nozzle 376, and the follower reflector 337 is fixed to the nozzle 377.
Hereinafter, the following reflectors 331 to 337 will be collectively referred to as following reflectors 33, and the reference numerals of 331 to 337 will be used as necessary for explanation.
Since the follower reflector 33 is fixedly disposed on the nozzle 37, even if the position of the nozzle 37 is changed by thermal expansion of the container body 351, the position of the follower reflector 33 is changed.
The follower reflector 33 is disposed between the top surface portion 310 of the water-cooling plate 31 and the reflector 32 in the Z-axis direction, and is disposed separately from the top surface portion 310 and the reflector 32. The follower reflector 33 is disposed apart from the top surface 352 and faces the top surface.
The follower reflector 33 has a larger outer shape than the first opening region of the first opening portion 311 of the water-cooled plate 31. The following reflector 33 has a substantially rectangular plate shape having a lateral length parallel to the X-axis direction of 40mm and a longitudinal length parallel to the Y-axis direction of 25 mm. The plurality of follower reflectors 331-337 are arranged on the same XY plane so as to be separated from each other. The distance between adjacent following reflectors 33 is, for example, 5 mm. The distance between the adjacent following reflectors 33 is set so that the adjacent following reflectors do not contact each other even if the position of the nozzle 37 is varied due to thermal expansion of the container body 351 and the position of the following reflector 33 is varied accordingly.
A second opening 330 through which the corresponding nozzle 37 penetrates is provided at a substantially central portion of the follower reflector 33. The second opening 330 has a substantially circular planar shape, and three protruding portions 38 protruding toward the center of the second opening 330 are formed at the opening end thereof. The three projections 38 are arranged at equal intervals from each other.
The projection 38 has an acute angle portion 38a, and the follower reflector 33 is fixedly arranged at the nozzle 37 by supporting the nozzle 37 at three points by the three acute angle portions 38 a. In the present embodiment, the follower reflector 33 is fixed to the nozzle 37 by three-point support, but the number of support points is not limited to three.
In the present embodiment, the nozzle 37 having the same cylindrical shape in cross section cut in the direction perpendicular to the Z-axis direction regardless of which XY plane is used for cutting is exemplified, but the present invention is not limited thereto.
for example, a cylindrical shape having an outer shape with a tapered shape may be adopted, and the outer shape may be formed so that a cross-sectional shape of the outer shape continuously cut in a direction perpendicular to the Z-axis direction is gradually increased in the Z-axis direction. Further, by using the nozzle 37 having a tapered outer shape such that the opening 380 through which the vaporized substance of the film material 36 is discharged to the outside of the evaporation source 3 is smaller than the opening on the side connected to the container body 351, when the second opening 330 of the follower reflector 33 is assembled through the nozzle 37, positioning in the Z-axis direction of the follower reflector 33 is facilitated.
In the present embodiment, the nozzle is attached so that the longitudinal direction thereof is perpendicular to the top surface of the evaporation source housing, but may be attached obliquely to the top surface with an angle.
When the water-cooled plate (first heat shielding plate) 31, the following reflector (second heat shielding plate) 33, and the reflector (third heat shielding plate) 32 are projected onto the top surface 352, the first opening region (first opening portion 311) of the water-cooled plate 31 and the third opening region (third opening portion 324) of the reflector 32 substantially overlap each other. The first opening 311 and the third opening 324 are formed so that the nozzle 37 is positioned inside the first opening region and the third opening region.
Further, the water-cooling plate 31, the reflector 32, and the following reflector 33 are arranged so that the first opening region and the third opening region overlapping each other are located within a projection region of the rectangular outer shape of the following reflector 33. The follower reflector 33 is arranged so that the arrangement relationship in which the first opening region and the third opening region are located within the projection region of the outer shape of the follower reflector 33 can be maintained even when the position of the nozzle 37 is changed due to thermal expansion of the container body 351 caused by heating at the time of film formation.
The evaporation source casing 35 is supported by the bottom surface 313 of the rectangular parallelepiped water-cooled plate 31 via the fixed support 391 and the movable support 392. In the present embodiment, a rectangular parallelepiped water-cooling plate is used, but the shape is not limited to this. In order to shield the radiant heat from the heater 34 and the evaporation source housing 35 heated by the heater 34 from reaching the film formation object (glass substrate in the present embodiment) 9, a shape in which at least a water-cooling plate is disposed between the film formation object 9 and the evaporation source housing 35 surrounded by the heater 34 may be adopted.
The fixed support portion 391 has a shape having a longitudinal direction in the Y-axis direction. The fixed support portion 391 is disposed between the bottom surface of the evaporation source casing 35 and the bottom surface portion 313 of the water-cooling plate 31 at the center portion of the evaporation source casing 35. A part of the bottom surface of the evaporation source casing 35 is fixed to the bottom surface 313 of the water-cooling plate 31 by a fixing support 391. In this way, the fixed support portion 391 is disposed at the center portion of the evaporation source casing 35, and even if thermal expansion of the container body 351 due to heating at the time of film formation occurs at the center portion of the evaporation source casing 35, a positional shift due to expansion hardly occurs.
The movable support part 392 is disposed between the bottom surface of the evaporation source case 35 and the bottom surface part 313 of the water-cooling plate 31. The movable support portions 392 are disposed in the vicinity of both ends in the longitudinal direction of the evaporation source housing 35, respectively, with the fixed support portion 391 as a boundary.
The movable support 392 is fixed to the bottom surface of the evaporation source casing 35, and is configured to be movable on the bottom surface 313 of the water-cooling plate 31. The movable support 392 is provided so as to be movable in the X-axis direction in accordance with the amount of expansion of the container body 351 in the X-axis direction caused by thermal expansion of the container body 351 by heating of the heater 34. For example, a tube-shaped roller having a long axis direction in the Y axis direction can be used as the movable support 392. The tube roll is rotatably fixed to the bottom surface of the evaporation source casing 35, and may be configured to be movable in the X-axis direction on the bottom surface portion 313 of the water-cooled plate 31.
In this manner, the evaporation source casing 35 is supported by the bottom surface 313 of the water-cooled plate 31 via the fixed support 391 and the movable support 392. The fixed support portion 391 and the movable support portion 392 are adjusted and set to respective heights so as to horizontally hold the evaporation source housing 35.
By providing the fixed support portion 391 and the movable support portion 392 in this manner, even if the container body 351 expands due to thermal expansion of the container body 351 caused by heating at the time of film formation, the movable support portion 392 slides in the X-axis direction along with the expansion, and therefore the container body 351 is not deformed.
Here, when the bottom surface of the evaporation source case 35 is fixed so that the evaporation source case 35 does not move due to thermal expansion during heating, the evaporation source case is deformed by an amount corresponding to the expansion due to the thermal expansion. This causes the inner bottom surface of the evaporation source case to lose smoothness, and the evaporation of the thin film material becomes uneven in the plane, resulting in variation in the film thickness of the thin film to be formed.
in contrast, in the present embodiment, since the evaporation source housing 35 is supported by the water-cooling plate 31 via the fixed support portion 391 and the movable support portion 392, even if the container main body 351 is expanded by thermal expansion, the evaporation source housing 35 can move in the X-axis direction by the movable support portion 392 in accordance with the expansion amount, and therefore, no deformation occurs in the evaporation source housing 35. Therefore, a thin film having a uniform thickness in the plane can be formed.
In the present embodiment, the movable support 392 is fixed to the evaporation source casing 35, and the movable support 392 is configured to be movable on the inner bottom surface of the rectangular parallelepiped water-cooled plate 31, but the present invention is not limited thereto. For example, the movable support 392 may not be fixed to the evaporation source housing 35, but may be fixed to the bottom surface 313 of the water-cooling plate 31, and the evaporation source housing 35 may be supported by the movable support 392. In this case, even if the container body 351 expands due to thermal expansion, the movable support 392 rotates, so that the expansion of the container body 351 is not hindered, and the evaporation source casing 35 is not deformed, and a thin film having a uniform thickness in the plane can be formed.
As described above, it is possible to reduce the radiant heat that cannot be shielded by the water-cooling plate 31 (first heat-shielding plate) and the reflector (third heat-shielding plate) 32, among the radiant heat from the heater 34 and the evaporation source housing 35 heated by the heater 34, by providing the follower reflector 33.
The difference in the effect of the presence or absence of the follower reflector 33 will be described with reference to fig. 5 and 7.
Fig. 5 and 7 correspond to enlarged partial views of the vicinity of the nozzle 37 surrounded by the broken line a in fig. 2.
Fig. 5 is a partial view of the evaporation source 3 of the present embodiment provided with the follower reflector 33. Fig. 5 is a partially enlarged plan view and a corresponding cross-sectional view showing the state before and after heating in the vicinity of the nozzle of the evaporation source 3.
Fig. 7 a and 7B are partial views of an evaporation source 203 of a comparative example in which the follower reflector 33 is not provided. Fig. 7 a is a partially enlarged plan view and a corresponding cross-sectional view showing the state before and after heating in the vicinity of the nozzle. B of fig. 7 shows the case of radiant heat B radiated from the evaporation source at the time of heating. In fig. 7, the same reference numerals are given to the same structure as the evaporation source 3 of the present embodiment.
As shown in a of fig. 7, before heating before film formation, the nozzles 375 and 376 are located on the left side of the inside of the respective substantially elliptical first opening portions 3115 and 3116. On the other hand, when the container body 351 is thermally expanded by heating at the time of film formation and extended in the longitudinal direction thereof and the positions of the nozzles 375 and 376 are varied, the nozzles 375 and 376 are positioned at the central portions of the first opening portions 3115 and 3116, respectively.
As shown in B of fig. 7, the radiant heat B from the heater 34 and the evaporation source housing 35 heated by the heater 34 is radiated to the outside of the evaporation source 203 through the first opening 311 provided in the top surface portion 310 of the water-cooling plate 31 and the third opening 324 provided in the reflector 32. The radiant heat B radiated to the outside of the evaporation source 203 reaches the glass substrate 9, and heats the glass substrate 9.
When the glass substrate 9 is heated and the substrate temperature becomes high, the vaporized substance of the thin film material that has reached the glass substrate 9 moves around on the glass substrate 9 without being properly adhered thereto, and is re-evaporated, and film formation cannot be properly performed.
Further, when a thin film is formed on a film formation target through a metal mask, the metal mask expands due to radiant heat, and a positional deviation of a film formation pattern occurs. Particularly, when a thin film having a high-definition pattern is formed, the positional deviation of the formed film pattern greatly affects the display characteristics of the display device when the glass substrate 9 is a substrate constituting the display device, for example.
In contrast, in the present embodiment, as shown in fig. 5, the follower reflector 33 provided in correspondence with the first opening 311 and the third opening 324 can reduce the radiant heat that cannot be shielded by the water cooling plate 31 and the reflector 32, among the radiant heat from the heater 34 and the evaporation source housing 35 heated by the heater 34 to the glass substrate 9.
The position of the follow reflector 33 can be changed in accordance with the change in the position of the nozzle 37 caused by heating during film formation. Accordingly, even if the evaporation device 35 expands due to heating during film formation and the position of the nozzle 37 changes, when the water-cooled plate 31, the reflector 32, and the follow reflector 33 are projected onto the ceiling surface 352, the first opening region and the third opening region are located within the projection region of the outer shape of the follow reflector 33, and therefore, the radiant heat can be reduced by the follow reflector 33 as in the case where thermal expansion does not occur.
Further, even if the evaporation source casing 35 expands due to heating, the amount of positional deviation differs for each nozzle 37, and the position of the nozzle 37 changes, the follower reflector 33 is provided separately for each nozzle 37, and therefore the operation of the nozzle 37 is not hindered.
By providing the follower reflector 33 in this manner, radiant heat from the heater 34 and the evaporation source housing 35 heated by the heater 34 to the glass substrate 9 can be shielded or reduced. This can suppress heating of the glass substrate 9 and cause the vaporized substance of the thin-film material 36 to adhere to the glass substrate 9, thereby enabling efficient film formation. In addition, when a thin film pattern is formed on the glass substrate 9 using a metal mask, expansion of the metal mask due to radiant heat can be suppressed, and thus, high-precision pattern deposition can be performed.
Here, the nozzle 37 is a member that emits vapor (vaporized material) of the thin film material. When the nozzle 37 is cooled and the vapor of the film material passing through the nozzle 37 is cooled and liquefied in the nozzle 37, the nozzle is clogged and a desired film cannot be obtained. Therefore, when the follow reflector 33 having a heat shielding function to follow the operation of the nozzle 37 is fixed and provided to the nozzle 37, it is preferable to adopt a structure in which the nozzle 37 is not cooled as much as possible.
In the present embodiment, the follower reflector 33 is configured to be fixed to the nozzle 37 in a point contact manner so as to minimize the heat radiation from the heater 34 and the evaporation source housing 35 heated by the heater 34 to the glass substrate 9 and to prevent the nozzle 37 from being cooled as much as possible. By fixing the nozzle 37 and the follower reflector 33 in point contact in this manner, the contact area between the nozzle 37 and the follower reflector 33 can be reduced, and thus heat conduction from the nozzle 37 to the follower reflector 33 can be inhibited, and cooling of the nozzle 37 by the follower reflector 33 can be suppressed.
The following reflector 33 is preferably formed of a material having a low emissivity, for example, 0.1 or less. By reducing the emissivity of the follow reflector 33, the heat conduction by radiation is reduced, and the amount of heat of the radiant heat reaching the glass substrate 9 can be reduced. In addition, when the glass substrate 9 is formed into a thin film pattern using a metal mask, expansion of the metal mask due to radiant heat can be suppressed, and occurrence of pattern shift due to metal expansion can be suppressed. In addition, instead of forming the following reflector 33 with a material having a low emissivity, the following reflector 33 having a surface coated with a material having a low emissivity may be used.
Furthermore, it is preferable to form the follower reflector 33 from a material having low thermal conductivity, for example, 10w/m · k or less, so that cooling of the nozzle 37 can be further suppressed.
As a material suitable for the follower reflector 33 of the present embodiment, which has low thermal conductivity and low emissivity, a metal having low emissivity such as tantalum, molybdenum, tungsten, nickel, cobalt, stainless steel, Inconel (registered trademark) or a nickel alloy containing chromium, iron, silicon, or the like can be used. Further, Al can be used2O3(aluminum oxide), BN (Boron Nitride), PBN (Pyrolytic Boron Nitride, Boron Nitride produced by reduced pressure Pyrolytic CVD (Chemical Vapor deposition)), SiO2inorganic materials such as (silica) and inorganic fiber-based heat insulators. In this embodiment, PBN having an emissivity of 0.4 or Inconel (registered trademark) having an emissivity of 0.15 is used. In order to reduce the emissivity, the surface roughness of the surface of the follower reflector 33 may be reduced to be a mirror surface state.
As described above, in the present embodiment, the heat quantity of the radiant heat can be reduced by providing the follower reflector 33 as compared with the case where the follower reflector 33 is not provided. Therefore, the radiant heat radiated from the evaporation source 3 can be reduced.
Further, since the follower reflector 33 is provided for each nozzle 37 and the follower reflector 33 changes in accordance with the change in the position of the nozzle 37, even if the evaporation source casing 35 expands during film formation and the amount of positional displacement of each nozzle 37 differs and the position thereof changes, the heat amount of the radiant heat can be reduced by the follower reflector 33 as before the thermal expansion.
(embodiment 2)
In the above embodiment, the follower reflector 33 is fixed to the nozzle 37 in a point contact manner, and the contact area of the follower reflector 33 and the nozzle 37 is reduced to suppress cooling of the nozzle 37, but is not limited thereto. For example, an annular gap member having low thermal conductivity may be provided between the follower reflector 33 and the nozzle 37 to suppress cooling of the nozzle 37.
Fig. 6 is a partially enlarged view of the vicinity of the nozzle of the evaporation source 103 according to the second embodiment. Fig. 6 a is a partially enlarged perspective view of the evaporation source 103 in the vicinity of the nozzle of the evaporation source 103, viewed from obliquely above. B of fig. 6 is a partially enlarged sectional view of the evaporation source 103. Hereinafter, the same components as those of the first embodiment will be denoted by the same reference numerals, and description thereof will be omitted. The first embodiment is different from the second embodiment in the shape of the opening portion following the reflector, and the gap member is provided in the second embodiment.
As shown in B of fig. 6, in the evaporation source 103, a follower reflector 1033 as a second heat shield plate is provided between the top surface portion 310 of the water-cooling plate 31 and the reflector 32 in the Z-axis direction, separately from the top surface portion 310 and the reflector 32. Further, an annular gap member 1038 is provided between the follower reflector 1033 and the nozzle 37. Also in the second embodiment, as in the first embodiment, the follower reflector 1033 is arranged individually for each nozzle 37.
The following reflector 1033 has a rectangular outer shape as in the following reflector 33 of the first embodiment. The following reflector 1033 has a second opening 1330 at a substantially central portion thereof. The shape of the second opening 1330 on the XY plane has a substantially circular shape. When the nozzle 37, the follower reflector 1033, and the annular gap member 1038 are projected onto the XY plane, the outer shape of the nozzle 37 is located within the projection area of the second opening 1330, and the outer shape of the nozzle 37 and the second opening 1330 overlap in a concentric circle shape. Further, the annular gap member 1038 is positioned in the projection view so as to fill a gap between the outer shape of the nozzle 37 and the second opening 1330.
The follower reflector 1033 is fixedly disposed on the nozzle 37 via a gap member 1038. By fixing the follow reflector 1033 to the nozzle 37 in this manner, the position of the follow reflector 1033 also changes in accordance with the change in the position of the nozzle 37. Further, by providing the follower reflector 1033, the amount of heat of radiation heat from the heater 34 and the evaporation source casing 35 heated by the heater 34 to the glass substrate 9, which cannot be completely shielded by the water-cooling plate 31 and the reflector 32, can be reduced.
The follow reflector 1033 is preferably formed using a material having a low emissivity, and the same material as the follow reflector 33 described in the first embodiment can be used.
The gap member 1038 is preferably made of a material having low thermal conductivity, for example, a material having thermal conductivity of 30w/m · k or less. As a specific material, alumina, silicon nitride, zirconia, or the like can be used.
By using a material having low thermal conductivity for the gap member 1038, cooling of the nozzle 37 by the follower reflector 1033 can be suppressed, and further, the selection range of the material used for the follower reflector 1033 can be expanded.
in addition, in addition to the structure in which the follower reflector 33 is fixed to the nozzle 37 by the protrusion 38 shown in the first embodiment, a structure in which a gap member formed of a material having low thermal conductivity is provided between the protrusion 38 and the nozzle 37 may be employed.
(embodiment 3)
in the first embodiment, the nozzle 37 is supported at three points by the follower reflector 33 and fixed to the nozzle 37, and cooling of the nozzle 37 is suppressed by supporting at the points, but the present invention is not limited thereto.
For example, the size of the second opening provided in the follower reflector may be substantially equal to the outer shape of the nozzle 37, the nozzle 37 may be inserted into the second opening provided in the follower reflector, the follower reflector and the nozzle 37 may be brought into contact with each other on the side surface of the second opening, and the follower reflector may be fixed to the nozzle 37. In such a configuration, in order to shield radiant heat and suppress cooling of the nozzle 37 by the follower reflector, it is preferable to form the follower reflector using a material having a low thermal conductivity, for example, 30w/m · k or less and a low emissivity, for example, 0.1 or less, and PBN having an emissivity of 0.4 or Inconel (registered trademark) having an emissivity of 0.15 can be used, for example.
(modification example)
In the above embodiments, silver is used as an example of the thin film material, but the present invention is not limited to this, and the present invention can be applied to the formation of an organic film such as a color filter.
In the above-described embodiment, the nozzle having one opening (vaporized material discharge port) is provided with one follower reflector, but the present invention is not limited thereto. For example, one follower reflector may be provided for one nozzle having a plurality of openings (vaporized material discharge ports) arranged in series. For example, one follower reflector may be provided for one nozzle having four openings arranged in series. Here, the nozzle having a plurality of openings also includes a configuration in which a plurality of nozzles 37 having one opening 380, which is the configuration shown in the above-described embodiment, are grouped into one nozzle group.
Description of the reference numerals
1: film forming apparatus
2: vacuum groove (storage part)
3,103: evaporation source
9: glass substrate (object of film formation)
31: water cooling plate (first heat shield)
32: reflector (third heat shield)
33, 1033: following reflector (second heat shield plate)
34: heater (heating device)
35: evaporation source shell (evaporation source container)
36: film material
37: nozzle with a nozzle body
38: protrusion part
310: top surface part of water cooling plate
311: a first opening part
324: third opening part
351: container body
352: the top surface
380: opening part of nozzle
391: fixed support
392: movable support part
Claims (6)
1. An evaporation source, comprising:
an evaporation source container having a container body having a top surface and accommodating a thin film material, and a plurality of nozzles coupled to the container body and protruding from the top surface and arranged in a uniaxial direction, the nozzles having an opening portion through which a vaporized substance of the thin film material is discharged;
A heating device that heats the container body;
A first heat shield plate that is disposed opposite the top surface so as to be spaced apart from the top surface and that has a plurality of first opening portions having a first opening area larger than opening portions of the nozzles that are provided corresponding to the plurality of nozzles and that penetrate the nozzles; and
And a second heat-shielding plate which is fixed to the plurality of nozzles between the container body and the first heat-shielding plate, is disposed to face the top surface so as to be separated from the top surface, and has a second opening portion through which the nozzles penetrate, and the second opening portion has an outer shape larger than the first opening region.
2. The evaporation source according to claim 1,
The second heat shield plate is fixed to the nozzle in a point contact manner.
3. The evaporation source according to claim 1 or 2,
The first opening has a shape having a longitudinal direction in the uniaxial direction.
4. The evaporation source according to any of claims 1 to 3,
The evaporation source container further includes a third heat shield plate that is disposed between the evaporation source container and the second heat shield plate so as to face the ceiling surface, and that has a plurality of third openings having a third opening area larger than the openings of the nozzles through which the nozzles penetrate, the third openings being provided corresponding to the plurality of nozzles.
5. The evaporation source according to any of claims 1 to 4,
The first heat-shielding plate has an outer shape surrounding the evaporation source container, the evaporation source container has a top surface portion and a bottom surface portion facing the top surface portion, the top surface portion has the first opening portion,
The container body is supported by the bottom surface portion so as to be movable in the uniaxial direction in accordance with an amount of extension of the container body in the uniaxial direction due to thermal expansion of the container body by heating of the heating device.
6. A film forming apparatus includes a storage unit capable of storing an object to be formed and an evaporation source,
The evaporation source has:
An evaporation source container having a container body having a top surface and accommodating a thin film material, and a plurality of nozzles connected to the container body and protruding from the top surface and arranged in a uniaxial direction, the nozzles having an opening portion for discharging a vaporized substance of the thin film material to the film formation object;
A heating device that heats the container body;
A first heat shield plate that is disposed opposite the top surface so as to be spaced apart from the top surface and that has a plurality of first opening portions having a first opening area larger than opening portions of the nozzles that are provided corresponding to the plurality of nozzles and that penetrate the nozzles; and
And a second heat shield plate that is fixed to the plurality of nozzles between the container body and the first heat shield plate, is disposed to face the top surface so as to be separated from the top surface, and has a second opening portion through which the nozzles penetrate, the second opening portion having an outer shape larger than the first opening region.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017087570 | 2017-04-26 | ||
| JP2017-087570 | 2017-04-26 | ||
| PCT/JP2018/016861 WO2018199184A1 (en) | 2017-04-26 | 2018-04-25 | Evaporation source and film deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110573647A true CN110573647A (en) | 2019-12-13 |
| CN110573647B CN110573647B (en) | 2021-10-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880027546.2A Active CN110573647B (en) | 2017-04-26 | 2018-04-25 | Evaporation source and film forming apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6586535B2 (en) |
| KR (1) | KR102234985B1 (en) |
| CN (1) | CN110573647B (en) |
| WO (1) | WO2018199184A1 (en) |
Cited By (1)
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| CN115522167A (en) * | 2022-09-22 | 2022-12-27 | 京东方科技集团股份有限公司 | Evaporation source equipment |
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| CN113227436A (en) * | 2018-12-21 | 2021-08-06 | 应用材料公司 | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
| JP2020132985A (en) * | 2019-02-25 | 2020-08-31 | 株式会社アルバック | Vacuum treatment apparatus and vacuum treatment method |
| CN109652773B (en) * | 2019-02-25 | 2021-01-22 | 京东方科技集团股份有限公司 | Prevent subassembly and evaporation equipment |
| CN110499492A (en) * | 2019-09-19 | 2019-11-26 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and its evaporation coating method |
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| Publication number | Publication date |
|---|---|
| JPWO2018199184A1 (en) | 2019-06-27 |
| WO2018199184A1 (en) | 2018-11-01 |
| KR102234985B1 (en) | 2021-04-01 |
| CN110573647B (en) | 2021-10-08 |
| KR20190132683A (en) | 2019-11-28 |
| JP6586535B2 (en) | 2019-10-02 |
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