CN110571168A - Wafer adsorption disc, wafer adsorption system and wafer bonding equipment - Google Patents

Wafer adsorption disc, wafer adsorption system and wafer bonding equipment Download PDF

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Publication number
CN110571168A
CN110571168A CN201910777560.0A CN201910777560A CN110571168A CN 110571168 A CN110571168 A CN 110571168A CN 201910777560 A CN201910777560 A CN 201910777560A CN 110571168 A CN110571168 A CN 110571168A
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CN
China
Prior art keywords
adsorption
wafer
holes
chuck
disc
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910777560.0A
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Chinese (zh)
Inventor
刘孟勇
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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Application filed by Yangtze Memory Technologies Co Ltd filed Critical Yangtze Memory Technologies Co Ltd
Priority to CN201910777560.0A priority Critical patent/CN110571168A/en
Publication of CN110571168A publication Critical patent/CN110571168A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

the embodiment of the invention discloses a wafer adsorption disc, which comprises: the adsorption plate body and a plurality of adsorption control channels; wherein a plurality of adsorption holes are uniformly and densely distributed on the adsorption disc body; the adsorption control channels are correspondingly connected with the adsorption holes one by one, so that the adsorption holes are independently controlled through the adsorption control channels correspondingly connected with the adsorption holes. In addition, the embodiment of the invention also discloses a wafer adsorption system and wafer bonding equipment.

Description

Wafer adsorption disc, wafer adsorption system and wafer bonding equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing processes, in particular to a wafer adsorption disc, a wafer adsorption system and wafer bonding equipment.
Background
The wafer bonding technology is that two polished wafers are tightly bonded together; this technique has become more and more widely used in semiconductor manufacturing.
In the bonding process, the bonding sequence and speed of different positions on two wafers are directly related to the alignment precision of wafer bonding. Therefore, a component for performing adsorption control on the wafer in the wafer bonding equipment is very important, and the control of different positions on the wafer and the uniformity of the control are both the keys influencing the wafer bonding effect.
Disclosure of Invention
accordingly, the present invention is directed to a wafer chuck, a wafer chucking system and a wafer bonding apparatus.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
the embodiment of the invention provides a wafer adsorption disc, which comprises: the adsorption plate body and a plurality of adsorption control channels; wherein the content of the first and second substances,
A plurality of adsorption holes are uniformly and densely distributed on the adsorption disc body;
The adsorption control channels are correspondingly connected with the adsorption holes one by one, so that the adsorption holes are independently controlled through the adsorption control channels correspondingly connected with the adsorption holes.
In the above scheme, the adsorption holes are distributed on the adsorption tray body in a density of at least one per square centimeter.
In the scheme, the opening size of the adsorption hole is less than or equal to 0.5 cm.
In the above scheme, a plurality of absorption holes are in be the dot matrix distribution on the absorption disk body.
In the above solution, the adsorption holes are independently controlled through adsorption control channels correspondingly connected to the adsorption holes, including that the adsorption holes can be independently controlled in at least one of the following parameters: adsorption starting time, adsorption duration and suction force.
The embodiment of the invention also provides a wafer adsorption system, which comprises the wafer adsorption disc in any one of the schemes and an adsorption control unit; wherein the content of the first and second substances,
The adsorption control unit is used for controlling the adsorption holes to work through the adsorption control channel; the device is also used for storing first data, the first data comprise the corresponding relation between the key identification and the function, and the function comprises controlling at least one preset adsorption hole in the plurality of adsorption holes to work according to preset parameters.
the embodiment of the invention also provides wafer bonding equipment which comprises the wafer adsorption disc in any one of the schemes.
In the above scheme, the wafer bonding equipment comprises an upper wafer adsorption disc and a lower wafer adsorption disc; any one of the wafer adsorption discs in the above schemes is an upper wafer adsorption disc of the wafer bonding equipment.
The wafer adsorption disc, the wafer adsorption system and the wafer bonding equipment provided by the embodiment of the invention, wherein the wafer adsorption disc comprises: the adsorption plate body and a plurality of adsorption control channels; a plurality of adsorption holes are uniformly and densely distributed on the adsorption disc body; the adsorption control channels are correspondingly connected with the adsorption holes one by one so that the adsorption holes are independently controlled by the adsorption control channels correspondingly connected with the adsorption holes; like this, change the adsorption function of wafer adsorption disc into the adsorption of the adsorption hole of even densely covered by regional absorption, each adsorption hole mutual independence mutual noninterference, and can accept independent control, improved the adsorption control ability of wafer adsorption disc to the wafer greatly, improved the control accuracy of wafer bonding in-process wafer laminating.
Drawings
FIG. 1 is a top view of a wafer chuck according to the related art;
FIG. 2 is a cross-sectional view of a wafer chuck according to an embodiment of the present invention;
FIG. 3 is a top view of a wafer chuck according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of a wafer chucking system according to an embodiment of the present invention;
Fig. 5 is a cross-sectional view of a wafer bonding apparatus according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the related art, the wafer adsorption plate is generally designed to have a plurality of different areas, and the wafer is adsorbed by vacuumizing the areas, so that the adhering time and speed of the different areas on the wafer are controlled. FIG. 1 is a top view of a wafer chuck in the related art; as shown, as an example of a related art, a wafer chucking plate includes: a circular Zone1 with a diameter phi equal to 218mm at the center, a Zone2 with four fan-like zones distributed in the directions of 45 degrees, 135 degrees, 225 degrees and 315 degrees outside the Zone1, a Zone3 with four fan-like zones distributed in the directions of 0 degrees, 90 degrees, 180 degrees and 270 degrees outside the Zone1, and a Zone4 distributed at the outer edges of the Zone2 and the Zone3 and with phi larger than 294 mm; therefore, the limited four areas can only be used as a unit to perform respective vacuum pumping control, and adjustment cannot be performed according to specific positions, so that the flexibility of control over the bonding sequence and speed of different positions on the wafer is poor, the uniformity of control is poor, and the requirement on wafer bonding alignment accuracy is more and more difficult to meet.
Based on this, the embodiment of the invention provides a wafer adsorption disc. With reference to fig. 2 and 3, the wafer chuck includes: an adsorption tray body 10, and a plurality of adsorption control passages 20; wherein, a plurality of adsorption holes 101 are uniformly and densely distributed on the adsorption tray body 10; the adsorption control channels 20 are correspondingly connected with the adsorption holes 101 one by one, so that the adsorption holes 101 are independently controlled through the adsorption control channels 20 correspondingly connected with the adsorption holes 101.
Here, the wafer adsorption disc can adsorb the wafer by vacuumizing in the adsorption hole; in this case, the wafer suction disk is also referred to as a vacuum suction disk, and the suction holes are also referred to as vacuum suction holes; the adsorption control channel is a channel for connecting the adsorption hole on the wafer adsorption disc with the vacuum pump.
In the embodiment of the invention, the adsorption function of the wafer adsorption disc is changed from adsorption in different areas into adsorption with the adsorption holes distributed uniformly and densely, the adsorption holes are independent from each other and do not interfere with each other, and can be independently controlled, so that the adsorption control capability of the wafer adsorption disc on the wafer is greatly improved, and the control precision of wafer bonding in the wafer bonding process is improved.
it is understood that the arrangement density of the adsorption holes 101 on the adsorption tray 10 should be as large as possible; in one embodiment, the chucking holes 101 are distributed on the chucking plate body 10 at a density of at least one per square centimeter.
In one embodiment, the opening size of the adsorption hole 101 is less than or equal to 0.5 cm. The shape of the adsorption hole includes but is not limited to a circle, for example, hexagonal holes and the like can also be formed; when the adsorption holes are circular, the opening size of the adsorption holes refers to the diameter; when the adsorption hole is in other shapes, the opening size of the adsorption hole is the distance between two points which are farthest away on the outer edge of the adsorption hole.
The adsorption holes 101 should be distributed as full as possible over the adsorption tray 10; that is, there is no vacant position on the adsorption tray body 10 where no adsorption hole is arranged, which is larger in area than the adsorption hole 101, except for a hardware collision (e.g., a prepared hole of a lifting structure for taking and placing a wafer, etc.). The plurality of adsorption holes 101 may be distributed in a dot matrix on the adsorption tray 10. In one embodiment, the plurality of suction holes 101 are distributed in a matrix on the suction tray 10; in another embodiment, the plurality of adsorption holes 101 are distributed in a honeycomb manner on the adsorption tray 10.
In one embodiment, the adsorption holes 101 are independently controlled by the adsorption control channels 20 connected to the adsorption holes, including the adsorption holes 101 capable of being independently controlled at least one of the following parameters: adsorption starting time, adsorption duration and suction force. In other words, the suction force may be provided to each of the plurality of suction holes 101 at different times, or the suction effect may be terminated at different times, and the magnitude of the suction force may be individually adjusted for each of the suction holes. Therefore, the wafer adsorption disc provided by the embodiment has flexible adsorption control on different positions on the wafer.
On the basis, the embodiment of the invention also provides a wafer adsorption system. FIG. 4 is a cross-sectional view of a wafer chucking system according to an embodiment of the present invention; as shown in the figure, the wafer adsorption system includes the wafer adsorption disk in any one of the above embodiments, and an adsorption control unit; wherein, the adsorption control unit is used for controlling the adsorption hole 101 to work through the adsorption control channel 20; the data processing device is further used for storing first data, the first data comprise corresponding relations between key identifiers and functions, and the functions comprise controlling at least one preset adsorption hole in the plurality of adsorption holes 101 to work according to preset parameters.
It is understood that the controlling of the suction holes refers to controlling the suction holes to generate suction force so as to suck corresponding positions on the wafer. Because the wafer adsorption disc provided by the embodiment of the invention comprises a large number of adsorption holes, a control program can be preset or freely written by a user by additionally arranging an adsorption control unit so as to automatically realize a plurality of functions; the user starts the functions by triggering the key identifications corresponding to the functions. For example, the key mark 1 controls all the suction holes 101 to sequentially start generating suction force at intervals of a first duration along the first direction, and the suction force in each suction hole 101 is increased from the first suction force value to the second suction force value and then decreased to the third suction force value, thereby completing the suction control function on the wafer. For another example, the key identifier 2 corresponds to controlling all the adsorption holes 101 to work together within a specified pattern range; the predetermined pattern includes, for example, an arc having a certain width and the same shape as the outer edge of the wafer, a circle having a diameter equal to the diameter of the wafer, a sector having a certain angle, and the like; thus, the adsorption holes in the same pattern range form a common adsorption area, all the adsorption holes can be freely divided into a plurality of areas, and the adsorption control unit can respectively control the adsorption holes in each pattern range according to different adsorption time and different suction force sizes to complete a complete function; therefore, the wafer adsorption system provided by the embodiment can completely cover the function of the wafer adsorption disc adsorbed in the subarea in the related technology, and not only can break through the limitation of the related technology, but also can freely and intelligently realize various adsorption functions according to the user requirements.
In addition, the embodiment of the invention also provides wafer bonding equipment. FIG. 5 is a cross-sectional view of a wafer bonding apparatus according to an embodiment of the present invention; as shown in the drawings, the wafer bonding apparatus includes the wafer chuck as described in any of the above embodiments.
In one embodiment, the wafer bonding apparatus includes an upper wafer chuck and a lower wafer chuck; the wafer adsorption plate in any one of the above embodiments is an upper wafer adsorption plate of the wafer bonding apparatus.
it should be understood that the wafer bonding apparatus provided in the embodiment of the present invention may further include the adsorption control unit in addition to the wafer adsorption plate described in any one of the above embodiments; that is, the wafer bonding apparatus may include the wafer adsorption system described in any one of the above embodiments.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.

Claims (8)

1. A wafer chuck, comprising: the adsorption plate body and a plurality of adsorption control channels; wherein the content of the first and second substances,
a plurality of adsorption holes are uniformly and densely distributed on the adsorption disc body;
The adsorption control channels are correspondingly connected with the adsorption holes one by one, so that the adsorption holes are independently controlled through the adsorption control channels correspondingly connected with the adsorption holes.
2. The wafer chuck of claim 1, wherein the chucking holes are distributed on the chuck body at a density of at least one per square centimeter.
3. The wafer chuck according to claim 1, wherein the opening size of the chucking holes is 0.5 cm or less.
4. The wafer chuck of claim 1, wherein the plurality of chucking holes are distributed in a matrix on the chuck body.
5. The wafer chuck of claim 1, wherein the chucking holes are independently controlled by chucking control channels connected correspondingly thereto, including the chucking holes being independently controlled in at least one of the following parameters: adsorption starting time, adsorption duration and suction force.
6. a wafer adsorption system, which is characterized by comprising the wafer adsorption disc of any one of claims 1 to 5 and an adsorption control unit; wherein the content of the first and second substances,
the adsorption control unit is used for controlling the adsorption holes to work through the adsorption control channel; the device is also used for storing first data, the first data comprise the corresponding relation between the key identification and the function, and the function comprises controlling at least one preset adsorption hole in the plurality of adsorption holes to work according to preset parameters.
7. A wafer bonding apparatus comprising the wafer chuck according to any one of claims 1 to 5.
8. The wafer bonding apparatus of claim 7, wherein the wafer bonding apparatus comprises an upper wafer chuck and a lower wafer chuck; the wafer adsorption plate of any one of claims 1 to 5 is an upper wafer adsorption plate of the wafer bonding equipment.
CN201910777560.0A 2019-08-22 2019-08-22 Wafer adsorption disc, wafer adsorption system and wafer bonding equipment Pending CN110571168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910777560.0A CN110571168A (en) 2019-08-22 2019-08-22 Wafer adsorption disc, wafer adsorption system and wafer bonding equipment

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Application Number Priority Date Filing Date Title
CN201910777560.0A CN110571168A (en) 2019-08-22 2019-08-22 Wafer adsorption disc, wafer adsorption system and wafer bonding equipment

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115229715A (en) * 2022-09-26 2022-10-25 长春光华微电子设备工程中心有限公司 Thin wafer adsorption disc and adsorption system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5564682A (en) * 1993-08-13 1996-10-15 Kabushiki Kaisha Toshiba Wafer stage apparatus for attaching and holding semiconductor wafer
JPH09251948A (en) * 1996-03-18 1997-09-22 Fujitsu Ltd Apparatus and method for flatness correction
CN103367217A (en) * 2012-04-11 2013-10-23 上海微电子装备有限公司 Silicon-chip absorption device and absorption method thereof
CN206733378U (en) * 2016-08-25 2017-12-12 环球晶圆股份有限公司 Wafer adsorption carrying disc
CN108604066A (en) * 2016-02-08 2018-09-28 Asml荷兰有限公司 Lithographic equipment, the method for unloading substrate and the method for loading substrate
CN109300834A (en) * 2018-12-10 2019-02-01 长江存储科技有限责任公司 A kind of vacuum chuck

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5564682A (en) * 1993-08-13 1996-10-15 Kabushiki Kaisha Toshiba Wafer stage apparatus for attaching and holding semiconductor wafer
JPH09251948A (en) * 1996-03-18 1997-09-22 Fujitsu Ltd Apparatus and method for flatness correction
CN103367217A (en) * 2012-04-11 2013-10-23 上海微电子装备有限公司 Silicon-chip absorption device and absorption method thereof
CN108604066A (en) * 2016-02-08 2018-09-28 Asml荷兰有限公司 Lithographic equipment, the method for unloading substrate and the method for loading substrate
CN206733378U (en) * 2016-08-25 2017-12-12 环球晶圆股份有限公司 Wafer adsorption carrying disc
CN109300834A (en) * 2018-12-10 2019-02-01 长江存储科技有限责任公司 A kind of vacuum chuck

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115229715A (en) * 2022-09-26 2022-10-25 长春光华微电子设备工程中心有限公司 Thin wafer adsorption disc and adsorption system

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Application publication date: 20191213