CN110571155A - 薄膜太阳能电池的光吸收层的制备方法 - Google Patents
薄膜太阳能电池的光吸收层的制备方法 Download PDFInfo
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- CN110571155A CN110571155A CN201910869277.0A CN201910869277A CN110571155A CN 110571155 A CN110571155 A CN 110571155A CN 201910869277 A CN201910869277 A CN 201910869277A CN 110571155 A CN110571155 A CN 110571155A
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- layer
- semiconductor
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- annealing furnace
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- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 230000031700 light absorption Effects 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 37
- 239000011669 selenium Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000000137 annealing Methods 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 20
- 229910052733 gallium Inorganic materials 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 3
- 238000004140 cleaning Methods 0.000 claims 1
- 238000004073 vulcanization Methods 0.000 abstract description 13
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 17
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 17
- 229910052717 sulfur Inorganic materials 0.000 description 15
- 239000011593 sulfur Substances 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005987 sulfurization reaction Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 206010039921 Selenium deficiency Diseases 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 2
- 229910000058 selane Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201910869277.0A CN110571155B (zh) | 2019-09-12 | 2019-09-12 | 薄膜太阳能电池的光吸收层的制备方法 |
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CN201910869277.0A CN110571155B (zh) | 2019-09-12 | 2019-09-12 | 薄膜太阳能电池的光吸收层的制备方法 |
Publications (2)
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CN110571155A true CN110571155A (zh) | 2019-12-13 |
CN110571155B CN110571155B (zh) | 2022-07-12 |
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CN201910869277.0A Active CN110571155B (zh) | 2019-09-12 | 2019-09-12 | 薄膜太阳能电池的光吸收层的制备方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112909125A (zh) * | 2021-01-28 | 2021-06-04 | 深圳先进技术研究院 | 一种光吸收层和近红外探测器的制备方法、太阳能电池 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1719625A (zh) * | 2005-06-03 | 2006-01-11 | 清华大学 | 铜铟镓硒或铜铟镓硫薄膜太阳能电池吸收层的制备方法 |
US20100311202A1 (en) * | 2007-11-30 | 2010-12-09 | Showa Shell Sekiyu K.K. | Process for producing light absorbing layer in cis based thin-film solar cell |
CN102856424A (zh) * | 2011-06-30 | 2013-01-02 | 北儒精密股份有限公司 | 太阳能电池的制造方法 |
CN105336800A (zh) * | 2015-10-28 | 2016-02-17 | 厦门神科太阳能有限公司 | Cigs基薄膜太阳能电池光吸收层的制备方法 |
-
2019
- 2019-09-12 CN CN201910869277.0A patent/CN110571155B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1719625A (zh) * | 2005-06-03 | 2006-01-11 | 清华大学 | 铜铟镓硒或铜铟镓硫薄膜太阳能电池吸收层的制备方法 |
US20100311202A1 (en) * | 2007-11-30 | 2010-12-09 | Showa Shell Sekiyu K.K. | Process for producing light absorbing layer in cis based thin-film solar cell |
CN102856424A (zh) * | 2011-06-30 | 2013-01-02 | 北儒精密股份有限公司 | 太阳能电池的制造方法 |
CN105336800A (zh) * | 2015-10-28 | 2016-02-17 | 厦门神科太阳能有限公司 | Cigs基薄膜太阳能电池光吸收层的制备方法 |
Non-Patent Citations (1)
Title |
---|
JASEOK KOO,ET AL: "Control of Se layer thickness in two-step selenization and sulfurization of CuGa/In/Se precursors", 《MATERIALS LETTERS 》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112909125A (zh) * | 2021-01-28 | 2021-06-04 | 深圳先进技术研究院 | 一种光吸收层和近红外探测器的制备方法、太阳能电池 |
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Effective date of registration: 20240206 Address after: 518000 1st to 6th floors, No. 62, Jinniu East Road, Zhukeng Community, Longtian Street, Pingshan District, Shenzhen, Guangdong Patentee after: SHENZHEN HEADQUARTER: S.C NEW ENERGY TECHNOLOGY Corp. Country or region after: China Address before: 1068 No. 518055 Guangdong city in Shenzhen Province, Nanshan District City Xili University School Avenue Patentee before: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY Country or region before: China |