CN110535029A - Light beam reshaping structure based on more folded battle arrays - Google Patents
Light beam reshaping structure based on more folded battle arrays Download PDFInfo
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- CN110535029A CN110535029A CN201910870213.2A CN201910870213A CN110535029A CN 110535029 A CN110535029 A CN 110535029A CN 201910870213 A CN201910870213 A CN 201910870213A CN 110535029 A CN110535029 A CN 110535029A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0972—Prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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Abstract
A kind of light beam reshaping structure based on more folded battle arrays, it include: the how folded battle array structure of multiple horizontal spacing settings, each more folded battle array structures include the semiconductor laser stacks of at least n placements that misplace along vertical direction, n >=2, each semiconductor laser stacks include several laser bar items along slow-axis direction arrangement；From polarization beam cementing prism, it is set on the output light path of each more folded battle array structures, for obtaining an output beam after the output beam of the semiconductor laser stacks is carried out polarization coupling, an output beam is reduced to the half of the output beam width of the semiconductor laser stacks in the spot width of slow-axis direction；And shaping lens set, realize the light beam rearrangement of fast axis direction.The light beam reshaping structure makes slow-axis direction beam quality become original half, and fast axis direction beam quality is constant, is compared with the traditional method, and has many advantages, such as that design is simple, compact-sized, easy to adjust, low in cost.
Description
Technical field
The disclosure belongs to semiconductor laser field, is related to a kind of light beam reshaping structure based on more folded battle arrays.
Background technique
High-power semiconductor laser is high etc. with electro-optical efficiency height, long service life, small in size and reliability
Advantage.These advantages make semiconductor laser optic communication, optical information access, laser printing, pumped solid and optical fiber laser,
Laser weapon and the fields such as biology and medicine obtain very extensive application.But due to its waveguiding structure and chip package etc.
The limitation of factor is embodied in fast axis direction light so that the speed axis direction beam quality difference of semiconductor laser is larger
Beam quality is the hundred times of diffraction limit close to diffraction limit, slow-axis direction beam quality, to limit high power semiconductor
Laser is further applied.Therefore, the beam quality for improving semiconductor laser is to determine high power semiconductor lasers energy
It is no to obtain the key further applied, it be directly related to laser beam can focal beam spot size and brightness, laser and light
Fine coupling efficiency.
The beam quality for improving semiconductor laser at present mainly homogenizes the light of speed axis direction by beam shaping technology
Beam quality.The essence of beam shaping technology is that light beam is divided into N sections in slow-axis direction by optical element, the light after making segmentation
Beam generates the displacement of equivalent on fast axis direction, then compensates the position of slow-axis direction in the enterprising rearrangement of fast axis direction for this N sections
It moves, it is final to realize the purpose for homogenizing fast and slow axis beam quality.But currently used for the optical element of beam shaping, there are still structures
The problems such as complicated, assembly operation trouble, adjusting inconvenience.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of light beam reshaping structures based on more folded battle arrays, at least partly to solve skill set forth above
Art problem.
(2) technical solution
According to one aspect of the disclosure, a kind of light beam reshaping structure based on more folded battle arrays is provided, comprising: multiple levels
Spaced more folded battle array structures, each more folded battle array structures include the semiconductor laser of the n placements that misplace along vertical direction
Folded battle array, n >=2, each semiconductor laser stacks include several laser bar items along slow-axis direction arrangement；From polarization coupling rib
Mirror is set on the output light path of each more folded battle array structures, for carrying out the output beam of the semiconductor laser stacks
An output beam is obtained after polarization coupling, the half of the output beam of the n semiconductor laser stacks is perpendicular to described
From polarization beam cementing prism transmission, remaining half is formed after being overlapped after polarizing and reflecting with the transmitted light beam of the half
Output beam, an output beam are reduced to the semiconductor laser stacks in the spot width of slow-axis direction
The half of output beam width；And shaping lens set, it is set to from the output light path of polarization beam cementing prism, for transmiting it
In a semiconductor laser stacks an output beam, with the primary output of one of semiconductor laser stacks
Light beam carries out different journeys along fast axis direction as reference beam, an output beam of remaining n-1 semiconductor laser stacks
The offset of degree fills the luminous dead zone of reference beam, realizes the light beam rearrangement of fast axis direction.
In an embodiment of the disclosure, the beam cementing prism of polarization certainly includes: half-wave plate, rhombic prism and right-angled edge
Mirror is wherein provided with half-wave plate on a side in adjacent two side of rhombic prism, another side and right-angled edge
Side fitting where the bevel edge of mirror.
In an embodiment of the disclosure, it is based on linear polarization characteristic, the output beam of the n semiconductor laser stacks
Half pass perpendicularly through the right-angle prism right-angle side, bevel edge and the rhombic prism transmission；The n semiconductor laser
Remaining half that device folds the output beam of battle array first passes through to be occurred in the rhombic prism after half-wave plate is rotated by 90 ° polarization state
An output beam is formed after being overlapped after reflection with the transmitted light beam of the half.
In an embodiment of the disclosure, it is coated with polarization beam splitter on side where the bevel edge of the right-angle prism, remaining
Anti-reflection film is coated on face；Anti-reflection film is coated on each face of rhombic prism.
In an embodiment of the disclosure, the shaping lens set includes multipair prism group, and each pair of prism group includes rectangle
Prism and parallel flat.
In an embodiment of the disclosure, the parallel flat is for transmiting one of semiconductor laser stacks
An output beam；Output beam of remaining described n-1 semiconductor laser stacks is perpendicular to the rhombic prism
It is wherein incident on one side, the corresponding side is emitting edge, defeated along the opposite side of the emitting edge after rhombic prism is totally reflected
Light beam out shifts compared to the output beam inputted in same optical path along fast axis direction.
In an embodiment of the disclosure, when more folded battle array structures include 3 or the dislocation placement along vertical direction greater than 3
Semiconductor laser stacks when, in corresponding each pair of prism group, rhombic prism number is greater than 1, in each pair of prism group it is different tiltedly
The corresponding emitting edge of square glass prism and the distance between the opposite side of the emitting edge are adjustable, so as to making n-1 semiconductor laser stacks
Generate corresponding offset.
In an embodiment of the disclosure, the rhombic prism and parallel flat of each pair of prism group are coated with anti-reflection film.
In an embodiment of the disclosure, in each two-fold battle array structure, the placement that misplaces along vertical direction it is each described
The light beam that semiconductor laser folds battle array outgoing is not interfere with each other.
In an embodiment of the disclosure, in the semiconductor laser stacks of the n placements that misplace along vertical direction,
The difference in height to misplace between two neighboring semiconductor laser stacks is equal, and size is equal to phase in each semiconductor laser stacks
N/mono- of adjacent laser bar stripe pitch.
(3) beneficial effect
It can be seen from the above technical proposal that the light beam reshaping structure based on more folded battle arrays that the disclosure provides, has following
The utility model has the advantages that
Battle array structures are folded, from the setting of polarization beam cementing prism and shaping lens set based on, so that an output light more
Beam is reduced to the half of the output beam width of the semiconductor laser stacks in the spot width of slow-axis direction, will wherein one
Output beam of a semiconductor laser stacks swashs as reference beam (optical path directly transmits), remaining n-1 semiconductor
The output beam that light device folds battle array carries out different degrees of offset along fast axis direction, fills the luminous dead zone of reference beam, real
The light beam rearrangement of existing fast axis direction, i.e. slow-axis direction beam quality (spot width of slow-axis direction) become original half, fast axle
Direction beam quality is constant, is compared with the traditional method, and has design simply, compact-sized, easy to adjust, low in cost etc. excellent
Point.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the light beam reshaping structure based on folded battle array according to shown in one embodiment of the disclosure.
Fig. 2 is according to shown in one embodiment of the disclosure from the structural schematic diagram for polarizing beam cementing prism.
Fig. 3 is that the output beam of the semiconductor laser stacks according to shown in one embodiment of the disclosure passes through from polarization coupling
The propagation path schematic diagram of prism.
Fig. 4 is the structural schematic diagram of the shaping lens set according to shown in one embodiment of the disclosure.
Fig. 5 be according to shown in one embodiment of the disclosure by from polarization beam cementing prism after an output beam using
Shaping lens set is transmitted to obtain the schematic diagram of secondary output beam.
Fig. 6 is the structural schematic diagram of the shaping lens set according to shown in another embodiment of the disclosure.
Fig. 7 transmits to obtain secondary for an output beam according to shown in another embodiment of the disclosure by shaping lens set
The schematic diagram of output beam.
Fig. 8 is that the output beam of (a) semiconductor laser stacks according to shown in one embodiment of the disclosure passes through from polarization
Output beam of (b) exported after beam cementing prism is illustrated using the variation of (c) secondary output beam after shaping lens set
Figure.
The scale diagrams that Fig. 9 misplaces between the semiconductor laser stacks according to shown in one embodiment of the disclosure.
[symbol description]
The mostly folded battle array structure of 1-；
2- polarizes beam cementing prism certainly；
21- half-wave plate；22- rhombic prism；
23- right-angle prism；
The bevel edge of 231- right-angle prism, while side is overlapped for right-angle prism and rhombic prism；
3- shaping lens set；
31- rhombic prism；32- parallel flat；
The first rhombic prism of 311-；The second rhombic prism of 312-；
The output beam of 40- semiconductor laser stacks；
The first output beam of 41-；The second output beam of 42-；
Output beam of 43,50,50a, 50b-；Bis- output beams of 60-.
Specific embodiment
Present disclose provides a kind of light beam reshaping structures based on more folded battle arrays, based on mostly folded battle array structures, from polarization coupling rib
The setting of mirror and shaping lens set, so that slow-axis direction beam quality (spot width of slow-axis direction) becomes original half,
Fast axis direction beam quality is constant, since under normal circumstances, the slow axis beam quality for folding battle array is poorer than the beam quality of fast axle, passes through
After beam shaping, the beam quality of slow axis is improved, and it is poor to reduce fast and slow axis beam quality, is conducive to reach and homogenizes speed
The purpose of Axial Bundle quality.It is compared with the traditional method, there is design simply, it is compact-sized, easy to adjust, low in cost etc. excellent
Point.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
The light beam reshaping structure based on more folded battle arrays of the disclosure, comprising: the how folded battle array structure of multiple horizontal spacing settings, often
A more folded battle array structures include the semiconductor laser stacks of the n placements that misplace along vertical direction, n >=2, each semiconductor laser
It includes several laser bar items along slow-axis direction arrangement that device, which folds battle array,；From polarization beam cementing prism, it is set to each more folded battle array structures
Output light path on, for obtaining an output light after the output beams of the semiconductor laser stacks is carried out polarization coupling
Beam, the half of the output beam of the n semiconductor laser stacks is perpendicular to described from polarization beam cementing prism transmission, remaining one
An output beam, the primary output are formed after being partly overlapped after polarizing and reflecting with the transmitted light beam of the half
Light beam is reduced to the half of the output beam width of the semiconductor laser stacks in the spot width of slow-axis direction；And it is whole
Shape lens set is set to from the output light path of polarization beam cementing prism, for transmiting one of semiconductor laser stacks
Output beam, using an output beam of one of semiconductor laser stacks as reference beam, remaining n-1
Output beam of a semiconductor laser stacks carries out different degrees of offset along fast axis direction, fills the hair of reference beam
The light beam rearrangement of fast axis direction is realized in light dead zone.
In embodiment of the disclosure, the shaping lens set includes multipair prism group, and each pair of prism group includes rhombic prism
With parallel flat.
In embodiment of the disclosure, the parallel flat is for transmiting one of semiconductor laser stacks
Output beam；Output beam of remaining described n-1 semiconductor laser stacks is perpendicular to the rhombic prism
Wherein incident on one side, the corresponding side is emitting edge, is exported after rhombic prism is totally reflected along the opposite side of the emitting edge
Light beam shift compared to the output beam inputted in same optical path along fast axis direction.
In embodiment of the disclosure, when more folded battle array structures include 3 or dislocation is placed along vertical direction greater than 3
When semiconductor laser stacks, in corresponding each pair of prism group, rhombic prism number is greater than 1, different rectangles in each pair of prism group
The corresponding emitting edge of prism and the distance between the opposite side of the emitting edge are adjustable, so as to producing n-1 semiconductor laser stacks
Raw corresponding offset.
In first exemplary embodiment of the disclosure, a kind of light beam reshaping structure based on more folded battle arrays is provided.This
In embodiment, an output beam of the semiconductor laser stacks of minimum altitude will be located at as reference beam, in other realities
It applies in example, an output beam of the semiconductor laser stacks of other height and positions can be selected as reference beam, such as
Output beam of the semiconductor laser stacks of some intermediate height or maximum height, corresponding only needs change corresponding
Optical path setting.
Fig. 1 is the structural schematic diagram of the light beam reshaping structure based on folded battle array according to shown in one embodiment of the disclosure.Fig. 3 is
Passed through according to the output beam of semiconductor laser stacks shown in one embodiment of the disclosure from the propagation road for polarizing beam cementing prism
Diameter schematic diagram.Fig. 5 is that an output beam according to shown in one embodiment of the disclosure after from polarization beam cementing prism passes through again
Shaping lens set is crossed to transmit to obtain the schematic diagram of secondary output beam.
Referring to Fig.1, shown in Fig. 3 and Fig. 5, the light beam reshaping structure based on more folded battle arrays of the present embodiment, comprising: multiple levels
Spaced more folded battle array structures 1, each more folded battle array structures include the semiconductor laser of the n placements that misplace along vertical direction
Folded battle array, n >=2, each semiconductor laser stacks include several laser bar items along slow-axis direction arrangement；From polarization coupling rib
Mirror 2 is set on the output light path of each more folded battle array structure 1, for by the output beam of the semiconductor laser stacks into
An output beam is obtained after row polarization coupling, the half of the output beam of the n semiconductor laser stacks is perpendicular to institute
It states from polarization beam cementing prism transmission, shape after remaining half is overlapped after polarizing and reflecting with the transmitted light beam of the half
Cheng Yici output beam, an output beam are reduced to the semiconductor laser stacks in the spot width of slow-axis direction
Output beam width half；And shaping lens set 3, it is set to from the output light path of polarization beam cementing prism, being used for will
An output beam positioned at n-1 semiconductor laser stacks of relatively high height carries out in various degree along fast axis direction
Offset, filling are located at the luminous dead zone of an output beam of 1 semiconductor laser stacks of minimum altitude, realize fast axle side
To light beam rearrangement.
In the present embodiment, in each two-fold battle array structure, each semiconductor laser for the placement that misplaces along vertical direction
The light beam of folded battle array outgoing is not interfere with each other.
Fig. 2 is according to shown in one embodiment of the disclosure from the structural schematic diagram for polarizing beam cementing prism.
In the present embodiment, as shown in Fig. 2, it is described from polarization beam cementing prism 2 include: half-wave plate 21, rhombic prism 22 and straight
Angle prism 23 is wherein provided with half-wave plate 21 on a side in adjacent two side of rhombic prism 22, another side
Face is bonded with side where the bevel edge of right-angle prism 23, and the bevel edge 231 of this while right-angle prism, the bevel edge 231 are illustrated in figure
Side is overlapped simultaneously for right-angle prism and rhombic prism.
In the disclosure, the half of the output beam of the n semiconductor laser stacks is perpendicular to described from polarization coupling
Prism transmission, remaining half form an output light after being overlapped after polarizing and reflecting with the transmitted light beam of the half
Beam, an output beam are reduced to the output light beamwidth of the semiconductor laser stacks in the spot width of slow-axis direction
The half of degree.
In one embodiment, it is based on linear polarization characteristic, the half of the output beam of the n semiconductor laser stacks is hung down
Right-angle side, bevel edge and the rhombic prism transmission of the excessively described right-angle prism of direct puncture, the n semiconductor laser stacks
Remaining half of output beam first passes through reflected in the rhombic prism after half-wave plate is rotated by 90 ° polarization state after with
The transmitted light beam of the half forms an output beam after being overlapped.Such as in the present embodiment, with one of semiconductor laser
The output beam that device folds battle array carries out example, and each semiconductor laser stacks include several laser bar along slow-axis direction arrangement
Item, as shown in the amplifier section irised out in Fig. 3, the output beam of corresponding each semiconductor laser stacks is also along slow axis side
To a plurality of directional light of distribution, illustrated here with three, certain disclosure does not limit the item number of directional light, referring to Fig. 3 institute
Show, the output beam 40 of semiconductor laser stacks is based on linear polarization characteristic dimidiation, and wherein half is defeated with second in Fig. 3
Light beam 42 is illustrated out, the other half is illustrated with the first output beam 41, and the second output beam 42 passes perpendicularly through the right-angle prism 23
Right-angle side, bevel edge 231 and the rhombic prism 22 transmit；First output beam 41 first passes through half-wave plate 21 and makes polarization state
It is formed after being overlapped after being reflected in the rhombic prism 22 after being rotated by 90 ° with the transmitted light beam of second output beam 42
One time output beam 43 is exported, in order to subsequent convenient for introducing the characteristic for being sequentially output light beam, by an output light in Fig. 3
Light beam after beam 43 exports corresponds to an output beam 50, which is input to shaping lens set as subsequent
3 input light beam, as shown in the amplifier section irised out in Fig. 3, an output beam 50 is in slow-axis direction (slow-axis direction in Fig. 3
For along the x-axis direction, fast axis direction is along the y-axis direction) spot width be reduced to the defeated of the semiconductor laser stacks
The half of 40 width of light beam out.
In the present embodiment, it is coated with polarization beam splitter on side where the bevel edge of the right-angle prism 23, is coated on lap
Anti-reflection film；The rhombic prism 22 is coated with anti-reflection film on each face.
Fig. 4 is the structural schematic diagram of the shaping lens set according to shown in one embodiment of the disclosure.
In the present embodiment, the shaping lens set 3 includes multipair prism group, and Fig. 4 illustrates the structure of a pair of of prism group, often
It include rhombic prism 31 and parallel flat 32 to prism group, the parallel flat 32 is located at the lower section of the rhombic prism 31.Its
In, the number of rhombic prism 31 can be 1,2 it is even multiple, specific number is configured according to actual needs.Certainly,
The size setting of above-mentioned rhombic prism 31 and parallel flat 32 and be configured according to optical path needs up and down, can be with
It is adaptively adjusted.
Certainly, in one example, with n=2, i.e., each more folded battle array structures only include 2 dislocation placements along vertical direction
Semiconductor laser stacks as an example, in corresponding each pair of prism group, include a rhombic prism 31 and a parallel flat
32, as shown in Figure 4；It is unified, corresponding n semiconductor for the ease of introducing, in the description of an output beam 50 in front
Laser folds the output beam 40 of battle array by the corresponding output beam from after polarizing beam cementing prism 2.Following for explanation rear
Optical path difference in the optical path of continuous shaping lens set between an output beam of different height will be located at most herein
Output beam of 1 semiconductor laser stacks of low clearance is denoted as 50a, and 1 (n-1) for being located at relatively high height is a
Output beam of semiconductor laser stacks is denoted as 50b, as shown in figure 5,1 semiconductor positioned at minimum altitude swashs
The output beam 50a that light device folds battle array passes perpendicularly through the parallel flat 32 and transmits；It is described positioned at the 1 of relatively high height
(n-1) an output beam 50b of a semiconductor laser stacks is corresponding to be somebody's turn to do perpendicular to the wherein incident on one side of rhombic prism 31
While being emitting edge, the light beam exported after rhombic prism 31 is totally reflected along the opposite side of the emitting edge is compared to same light
Output beam 50b of road input shifts along fast axis direction, and filling is located at 1 semiconductor laser of minimum altitude
The luminous dead zone of output beam 50a of folded battle array, the secondary output beam 60 after forming fast axis direction light beam rearrangement.
Certainly, examples detailed above is to carry out example the case where n=2, and in the disclosure, n may be greater than 2 positive integer, example
Such as, when n=3 or it is bigger when, positioned at relatively high height n-1 semiconductor laser stacks an output beam along fast
Axis direction carries out different degrees of offset, and filling is located at an output beam of 1 semiconductor laser stacks of minimum altitude
Luminous dead zone.When more folded battle array structures 1 include 3 or the semiconductor laser for the placement that misplaces along vertical direction greater than 3 is folded
When battle array, in corresponding each pair of prism group, rhombic prism number is greater than 1, the corresponding incidence of difference rhombic prism in each pair of prism group
The distance between the opposite side of side and the emitting edge differs, so as to making n-1 semiconductor laser stacks generate in various degree inclined
It moves.Example is carried out with n=3 below.
Fig. 6 is the structural schematic diagram of the shaping lens set according to shown in another embodiment of the disclosure.Referring to shown in Fig. 6, In
In another example, for example n=3, i.e., each more folded battle array structures include the semiconductor laser of 3 placements that misplace along vertical direction
Folded battle array, each pair of prism group of corresponding shaping lens set include 2 rhombic prism 31 and 1 parallel flats 32, respectively with layer in Fig. 6
Folded two rhombic prisms 311 and 322 are put down as an example, the first rhombic prism 311 is located at the lower section of the second rhombic prism 312
Row plate 32 is located at the lower section of two rhombic prisms 31 (including the first rhombic prism 311 and the second rhombic prism 312).First tiltedly
Square glass prism 311 and the distance between 312 emitting edge of the second rhombic prism and incidence edge-to-edge differ, for example, here with second
The distance between 312 emitting edge of rhombic prism and incidence edge-to-edge are greater than 311 emitting edge of the first rhombic prism and the emitting edge
The distance between opposite side is used as example.Fig. 7 is that an output beam according to shown in another embodiment of the disclosure passes through shaping mirror
Piece group is transmitted to obtain the schematic diagram of secondary output beam.In the corresponding optical path of the example, referring to shown in Fig. 7, it is located at maximum height
1 semiconductor laser stacks (such as referred to as first folded battle array) an output beam by the second rhombic prism 312 hair
The offset of raw first degree is located at the primary of 1 semiconductor laser stacks of intermediate altitude (such as referred to as second folded battle array)
The offset of second degree occurs by the first rhombic prism 311 for output beam, the two are located at the semiconductor of relatively high height
The output beam that laser folds battle array is filled in 1 semiconductor laser stacks positioned at minimum altitude and (for example is referred to as the
Three folded battle arrays) an output beam luminous dead zone.In short, first is folded on the basis of the folded battle array of the third for being located at minimum altitude
Battle array (or second folded battle array) an output beam by offset after, first fill to third fold battle array an output beam shine
Dead zone, the primary output of the second folded battle array (aforementioned second folded gust of the case where, correspond to the first folded battle array) refilled after deviating to
The luminous dead zone of first folded battle array (aforementioned second folded gust of the case where, correspond to the second folded battle array) and the folded battle array entirety of third, it is right in bracket
The case where answering needs 311 exchange sequence of the second rhombic prism 312 and the first rhombic prism in light channel structure.
N be greater than 3 the case where with it is previously described similarly, which is not described herein again.
In short, being located at an output beam of n-1 semiconductor laser stacks of relatively high height along fast axis direction
Different degrees of offset is carried out, filling is located at shining for an output beam of 1 semiconductor laser stacks of minimum altitude
Dead zone, meaning are equivalent to: an output beam positioned at n-1 semiconductor laser stacks of relatively high height is to be located at most
For output beam of 1 semiconductor laser stacks of low clearance as benchmark, " successively " fills previous light beam combination
Shine dead zone, " successively " here by the placement order and size of variation rhombic prism (emitting edge and incidence edge-to-edge it
Between distance) regulated and controled so that finally occur light beam rearrangement after without optics dead zone.
In the present embodiment, the rhombic prism 31 and parallel flat 32 of each pair of prism group are coated with anti-reflection film.
Fig. 8 is that the output beam of (a) semiconductor laser stacks according to shown in one embodiment of the disclosure passes through from polarization
Output beam of (b) exported after beam cementing prism is illustrated using the variation of (c) secondary output beam after shaping lens set
Figure.
Referring to shown in (a)-(c) in Fig. 8, in the present embodiment, based on mostly folded battle array structures 1, from polarization beam cementing prism 2 and whole
The setting of shape lens set 3 a, so that output beam is reduced to semiconductor laser stacks in the spot width of slow-axis direction
The half of output beam width will be located at an output beam edge of n-1 semiconductor laser stacks of relatively high height
Fast axis direction carries out different degrees of offset, and filling is located at an output light of 1 semiconductor laser stacks of minimum altitude
The luminous dead zone of beam realizes that the light beam rearrangement of fast axis direction, i.e. slow-axis direction beam quality (spot width of slow-axis direction) become
For original half, fast axis direction beam quality is constant, realizes the purpose for homogenizing fast and slow axis beam quality.
The scale diagrams that Fig. 9 misplaces between the semiconductor laser stacks according to shown in one embodiment of the disclosure.
In embodiment of the disclosure, in the semiconductor laser stacks of the n placements that misplace along vertical direction, such as scheme
Shown in 9 the case where n=3, the difference in height to misplace between two neighboring semiconductor laser stacks is respectively h1 and h2, i.e., second
It is h1 that a semiconductor laser stacks and first semiconductor, which fold the difference in height to misplace between battle array, and third semiconductor laser is folded
It is h2 that battle array and second semiconductor, which fold the difference in height to misplace between battle array, here with each adjacent sharp in each semiconductor laser stacks
Light bar stripe pitch is equal, is H example, then can be h1=h2=H/3, in this way, can guarantee that some semiconductor swashs
The output beam that light device folds battle array fills the luminous dead zone of the output beam of other semiconductor laser stacks, i.e. institute after shifting
It is wrong between two neighboring semiconductor laser stacks in the semiconductor laser stacks for stating the n placements that misplace along vertical direction
The difference in height of position is equal, and size is equal to n/mono- of adjacent laser bar stripe pitch in each semiconductor laser stacks.Certainly,
In other embodiments, different (each semiconductor laser stacks of corresponding different semiconductor laser stacks medium spacing
Middle distributed uniform, the spacing for being only different semiconductor laser stacks is different) the case where, or swash in each semiconductor
Light device folds the case where being unevenly distributed in battle array etc., and above-mentioned mentality of designing is similar.
In conclusion space arrangement is close, institute's duty present disclose provides a kind of light beam reshaping structure based on more folded battle arrays
Between it is small in size, and be emitted light beam between do not interfere with each other.The slow axis beam quality that semiconductor laser after shaping folds battle array becomes former
The half come, the beam quality of fast axis direction are constant.The beam shaping mode is compared with the traditional method, and is had design simple, is tied
The advantages that structure is compact, easy to adjust, low in cost.
It should be noted that being made herein with an output beam for being located at 1 semiconductor laser stacks of minimum altitude
On the basis of, an output beam positioned at n-1 semiconductor laser stacks of relatively high height carries out in various degree inclined
It is illustrated for shifting, according to same inventive concept, changes the reference beam position as benchmark, such as high to be located at highest
Output beam of the semiconductor laser stacks of degree is folded as benchmark, or with the semiconductor laser of wherein a certain height
As benchmark, different degrees of offset occurs output beam of battle array for other light-beam positions, realizes that the rearrangement in the dead zone that shines is equal
Within the protection scope of the disclosure.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
Furthermore word "comprising" or " comprising " do not exclude the presence of element or step not listed in the claims.Positioned at member
Word "a" or "an" before part does not exclude the presence of multiple such elements.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of light beam reshaping structure based on more folded battle arrays characterized by comprising
The how folded battle array structure of multiple horizontal spacing settings, each more folded battle array structures include that a dislocation along vertical direction of n is placed
Semiconductor laser stacks, n >=2, each semiconductor laser stacks include several laser bar items along slow-axis direction arrangement；
From polarization beam cementing prism, it is set on the output light path of each more folded battle array structures, for folding the semiconductor laser
The output beam of battle array obtains an output beam, the output beam of the n semiconductor laser stacks after carrying out polarization coupling
Half perpendicular to it is described from polarization beam cementing prism transmission, remaining half by polarization and reflection after it is saturating with the half
Irradiating light beam forms an output beam after being overlapped, an output beam is reduced to described half in the spot width of slow-axis direction
Conductor laser folds the half of the output beam width of battle array；And
Shaping lens set is set to from the output light path of polarization beam cementing prism, for transmiting one of semiconductor laser
Output beam of folded battle array, using an output beam of one of semiconductor laser stacks as reference beam,
Output beam of remaining n-1 semiconductor laser stacks carries out different degrees of offset along fast axis direction, fills benchmark
The luminous dead zone of light beam, realizes the light beam rearrangement of fast axis direction.
2. light beam reshaping structure according to claim 1, which is characterized in that the beam cementing prism of polarization certainly includes: half-wave
Piece, rhombic prism and right-angle prism are wherein provided with half-wave plate on a side in adjacent two side of rhombic prism,
Another side is bonded with side where the bevel edge of right-angle prism.
3. light beam reshaping structure according to claim 2, which is characterized in that
Based on linear polarization characteristic, the half of the output beam of the n semiconductor laser stacks passes perpendicularly through the right-angled edge
Right-angle side, bevel edge and the rhombic prism transmission of mirror；
Remaining half of the output beam of the n semiconductor laser stacks first passes through half-wave plate and polarization state is rotated by 90 °
An output beam is formed after being overlapped after reflecting in the rhombic prism afterwards with the transmitted light beam of the half.
4. light beam reshaping structure according to claim 2, which is characterized in that
It is coated with polarization beam splitter on side where the bevel edge of the right-angle prism, is coated with anti-reflection film on lap；
Anti-reflection film is coated on each face of rhombic prism.
5. light beam reshaping structure according to claim 1, which is characterized in that the shaping lens set includes multipair prism
Group, each pair of prism group include rhombic prism and parallel flat.
6. light beam reshaping structure according to claim 5, which is characterized in that
The parallel flat is used to transmit an output beam of one of semiconductor laser stacks；
Output beam of remaining described n-1 semiconductor laser stacks wherein enters on one side perpendicular to the rhombic prism
It penetrates, the corresponding side is emitting edge, is compared after rhombic prism is totally reflected along the light beam that the opposite side of the emitting edge exports
It shifts in the output beam inputted in same optical path along fast axis direction.
7. light beam reshaping structure according to claim 5 or 6, which is characterized in that when more folded battle array structures include 3 or are greater than
When the semiconductor laser stacks of 3 placements that misplace along vertical direction, in corresponding each pair of prism group, rhombic prism number is greater than
1, the corresponding emitting edge of different rhombic prisms and the distance between the opposite side of the emitting edge are adjustable in each pair of prism group, so as to making
Remaining described n-1 semiconductor laser stacks generate corresponding offset.
8. light beam reshaping structure according to claim 5, which is characterized in that the rhombic prism of each pair of prism group is put down with parallel
Plate is coated with anti-reflection film.
9. light beam reshaping structure according to claim 1, which is characterized in that in each two-fold battle array structure, along vertical side
The each semiconductor laser placed to dislocation is folded the light beam that battle array is emitted and is not interfere with each other.
10. light beam reshaping structure according to claim 1, which is characterized in that the n dislocation placements along vertical direction
Semiconductor laser stacks in, the difference in height to misplace between two neighboring semiconductor laser stacks is equal, and size is equal to every
N/mono- of adjacent laser bar stripe pitch in a semiconductor laser stacks.
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Application publication date: 20191203 |