CN110534439B - 硅片垫片用于雪崩二极管降噪的封装方法 - Google Patents

硅片垫片用于雪崩二极管降噪的封装方法 Download PDF

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CN110534439B
CN110534439B CN201910871850.1A CN201910871850A CN110534439B CN 110534439 B CN110534439 B CN 110534439B CN 201910871850 A CN201910871850 A CN 201910871850A CN 110534439 B CN110534439 B CN 110534439B
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silicon wafer
avalanche diode
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CN110534439A (zh
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辛清乐
张明
王涛
张世权
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Wuxi Zhongwei Microchips Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01ELECTRIC ELEMENTS
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609Diodes
    • H01L29/66098Breakdown diodes
    • H01L29/66113Avalanche diodes
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract

本发明涉及一种雪崩二极管的封装方法,具体涉及硅片垫片用于雪崩二极管降噪的封装方法。本发明雪崩二极管降噪的封装方法,包括如下步骤:(a)提供雪崩二极管封装的管座;(b)在雪崩二极管管座上使用绝缘胶进行硅片垫片的粘接;(c)在硅片基座上使用银胶进行芯片的粘接;(d)进行键合、封帽;其中,步骤(b)中所述硅片垫片的下表面绝缘,上表面导通。本发明采用契合度更高,价格更便宜的硅片垫片代替陶瓷垫片进行垫接,能够使整个结构的契合度更高;且硅片垫片的生产工艺简单,成本较陶瓷垫片而言,有大幅的降低。

Description

硅片垫片用于雪崩二极管降噪的封装方法
技术领域
本发明涉及一种雪崩二极管的封装方法,具体涉及硅片垫片用于雪崩二极管降噪的封装方法。
背景技术
随着微电子技术的发展,雪崩二极管作为负阻器件,具有输出功率大的优点,雪崩二极管得到广泛的使用。但是由于雪崩倍增过程中产生电子和空穴对的无规则性,雪崩二极管会产生很大的噪声。按照正常方式封装,双管脚直接键合会遗留较大噪声,人们通常使用陶瓷垫片进行分隔封装。
发明内容
本发明所要解决的技术问题在于针对上述现有技术的不足,提供了一种硅片垫片用于雪崩二极管降噪的封装方法。本发明采用硅片垫片代替陶瓷垫片进行垫接,能够使整个结构的契合度更高;且硅片垫片的生产工艺简单,成本较陶瓷垫片而言,有大幅度的降低。
为解决上述技术问题,本发明采用的技术方案是:一种硅片垫片用于雪崩二极管降噪的封装方法,其特征在于,该封装方法具有以下特征:
一种硅片垫片用于雪崩二极管降噪的封装方法,使用硅片垫片代替陶瓷垫片,包括如下步骤:
(a)提供雪崩二极管封装的管座;
(b)在雪崩二极管管座上使用绝缘胶进行硅片垫片的粘接;
(c)在硅片垫片上使用导电粘接胶进行芯片的粘接;
(d)进行键合、封帽;
其中,步骤(b)中所述硅片垫片的下表面绝缘,上表面导通。
所述硅片垫片使用裸硅片,并对裸硅片的下表面进行绝缘处理,保证垫片下表面绝缘。
在所述硅片垫片的上表面镀一层导电金属层,保证垫片上表面导通。
所述导电金属层为铝层或银层。
与现有技术相比,本发明具有以下优点:
本发明采用契合度更高,价格更便宜的硅片垫片代替陶瓷垫片进行垫接,能够使整个结构的契合度更高;且硅片垫片的生产工艺简单,成本较陶瓷垫片而言,有大幅的降低。
附图说明
图1为本发明实施例1雪崩二极管降噪封装的结构示意图。
图2为本发明实施例1硅片垫片的截面结构示意图。
附图标记说明:1-管座;2-硅片垫片;3-芯片。
具体实施方式
实施例1
如图1所示,一种硅片垫片用于雪崩二极管降噪的封装方法,包括如下步骤:
(a)提供雪崩二极管封装的管座1;
(b)在雪崩二极管管座1上使用绝缘胶进行硅片垫片2的粘接;
(c)在硅片垫片2基座上使用银胶进行芯片3的粘接;
(d)进行键合、封帽;
步骤(b)中所述硅片垫片2使用裸硅片,并对裸硅片下表面进行热氧处理,保证垫片下表面绝缘,在裸硅片的上表面镀铝,保证垫片上表面导通,硅片垫片的结构如图2所示。
实施例2
一种硅片垫片用于雪崩二极管降噪的封装方法,包括如下步骤:
(a)提供雪崩二极管封装的管座1;
(b)在雪崩二极管管座1上使用绝缘胶进行硅片垫片2的粘接;
(c)在硅片垫片2基座上使用银胶进行芯片3的粘接;
(d)进行键合、封帽;
步骤(b)中所述硅片垫片2使用裸硅片,对裸硅片下表面进行热氧处理,保证垫片下表面绝缘,在裸硅片上表面镀银,保证垫片上表面导通。
以上所述,仅是本发明的较佳实施例,并非对本发明作任何限制。凡是根据本发明实质对以上实施例所作的任何简单修改、变更以及等效变化,均仍属于本发明技术方案的保护范围内。

Claims (2)

1.一种硅片垫片用于雪崩二极管降噪的封装方法,其特征在于,使用硅片垫片代替陶瓷垫片,包括如下步骤:
(a)提供雪崩二极管封装的管座(1);
(b)在雪崩二极管管座(1)上使用绝缘胶进行硅片垫片(2)的粘接;
(c)在硅片垫片(2)上使用导电粘接胶进行芯片(3)的粘接;
(d)进行键合、封帽;
其中,步骤(b)中所述硅片垫片(2)的下表面绝缘,上表面导通,所述硅片垫片(2)的上表面镀一层导电金属层,所述导电金属层为铝层或银层。
2.根据权利要求1所述的硅片垫片用于雪崩二极管降噪的封装方法,其特征在于,所述硅片垫片(2)使用裸硅片,并对裸硅片的下表面进行绝缘处理,保证垫片下表面绝缘。
CN201910871850.1A 2019-09-16 2019-09-16 硅片垫片用于雪崩二极管降噪的封装方法 Active CN110534439B (zh)

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