CN110534145B - 感测电路和包括其的半导体器件 - Google Patents

感测电路和包括其的半导体器件 Download PDF

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Publication number
CN110534145B
CN110534145B CN201811495676.7A CN201811495676A CN110534145B CN 110534145 B CN110534145 B CN 110534145B CN 201811495676 A CN201811495676 A CN 201811495676A CN 110534145 B CN110534145 B CN 110534145B
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China
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line
sense
signal
circuit
isolation
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CN201811495676.7A
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Chinese (zh)
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CN110534145A (zh
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罗元均
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SK Hynix Inc
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SK Hynix Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
CN201811495676.7A 2018-05-23 2018-12-07 感测电路和包括其的半导体器件 Active CN110534145B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180058434A KR102471418B1 (ko) 2018-05-23 2018-05-23 센싱 회로 및 이를 포함하는 반도체 장치
KR10-2018-0058434 2018-05-23

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CN110534145A CN110534145A (zh) 2019-12-03
CN110534145B true CN110534145B (zh) 2023-06-30

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US (1) US10643687B2 (ko)
KR (1) KR102471418B1 (ko)
CN (1) CN110534145B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200068942A (ko) * 2018-12-06 2020-06-16 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 동작 방법
KR102634614B1 (ko) * 2019-07-12 2024-02-08 에스케이하이닉스 주식회사 수직형 메모리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608668A (en) * 1995-12-22 1997-03-04 Micron Technology, Inc. Dram wtih open digit lines and array edge reference sensing
CA2217359A1 (en) * 1997-09-30 1999-03-30 Mosaid Technologies Incorporated Method for multilevel dram sensing
US6301175B1 (en) * 2000-07-26 2001-10-09 Micron Technology, Inc. Memory device with single-ended sensing and low voltage pre-charge

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100261217B1 (ko) * 1997-11-21 2000-07-01 윤종용 반도체 메모리장치의 셀 어레이 제어장치
KR100393224B1 (ko) * 2001-06-30 2003-07-31 삼성전자주식회사 비트라인 쌍들의 부하를 차단하는 회로를 구비하는 반도체메모리장치
KR100410988B1 (ko) * 2001-11-15 2003-12-18 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 비트 라인 센싱 방법
US6590819B1 (en) * 2002-03-14 2003-07-08 Micron Technology, Inc. Digit line equilibration using time-multiplexed isolation
KR20100036596A (ko) 2008-09-30 2010-04-08 삼성전자주식회사 에지 더미 셀들을 제거한 오픈 비트라인 구조의 반도체 메모리 장치
KR102070977B1 (ko) 2013-08-01 2020-01-29 삼성전자주식회사 감지 증폭기 및 그것을 포함하는 메모리 장치
KR102562312B1 (ko) * 2016-08-24 2023-08-01 삼성전자주식회사 비트라인 센스 앰프

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608668A (en) * 1995-12-22 1997-03-04 Micron Technology, Inc. Dram wtih open digit lines and array edge reference sensing
CA2217359A1 (en) * 1997-09-30 1999-03-30 Mosaid Technologies Incorporated Method for multilevel dram sensing
US6301175B1 (en) * 2000-07-26 2001-10-09 Micron Technology, Inc. Memory device with single-ended sensing and low voltage pre-charge

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Publication number Publication date
KR20190133461A (ko) 2019-12-03
US10643687B2 (en) 2020-05-05
CN110534145A (zh) 2019-12-03
KR102471418B1 (ko) 2022-11-29
US20190362767A1 (en) 2019-11-28

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