CN110520493B - 自停止性抛光组合物及用于块状氧化物平坦化的方法 - Google Patents

自停止性抛光组合物及用于块状氧化物平坦化的方法 Download PDF

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CN110520493B
CN110520493B CN201880025600.XA CN201880025600A CN110520493B CN 110520493 B CN110520493 B CN 110520493B CN 201880025600 A CN201880025600 A CN 201880025600A CN 110520493 B CN110520493 B CN 110520493B
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polishing composition
polishing
substrate
combinations
self
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CN110520493A (zh
Inventor
A.W.海恩斯
张柱然
李常怡
林越
崔骥
S.布罗斯南
南哲祐
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CMC Materials LLC
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CMC Materials LLC
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201880025600.XA 2017-04-17 2018-03-23 自停止性抛光组合物及用于块状氧化物平坦化的方法 Active CN110520493B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110855832.1A CN113637412A (zh) 2017-04-17 2018-03-23 自停止性抛光组合物及用于块状氧化物平坦化的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762486219P 2017-04-17 2017-04-17
US62/486,219 2017-04-17
PCT/US2018/024067 WO2018194792A1 (en) 2017-04-17 2018-03-23 Self-stopping polishing composition and method for bulk oxide planarization

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CN110520493A CN110520493A (zh) 2019-11-29
CN110520493B true CN110520493B (zh) 2022-11-22

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EP (1) EP3612608A4 (de)
JP (1) JP7132942B2 (de)
KR (1) KR102671229B1 (de)
CN (2) CN110520493B (de)
TW (1) TWI663231B (de)
WO (1) WO2018194792A1 (de)

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EP4048745A4 (de) 2019-10-22 2023-12-06 CMC Materials, Inc. Zusammensetzung und verfahren für dielektrischen cmp
KR20220085803A (ko) * 2019-10-22 2022-06-22 씨엠씨 머티리얼즈, 인코포레이티드 자가-정지 연마 조성물 및 방법
US20210115300A1 (en) 2019-10-22 2021-04-22 Cmc Materials, Inc. Composition and method for silicon oxide and carbon doped silicon oxide cmp
TWI767355B (zh) * 2019-10-24 2022-06-11 美商慧盛材料美國責任有限公司 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
JP2024500162A (ja) * 2020-12-21 2024-01-04 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 高トポロジカル選択比のための自己停止ポリッシング組成物及び方法
WO2023013059A1 (ja) * 2021-08-06 2023-02-09 昭和電工マテリアルズ株式会社 Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット及び研磨方法
US20230242791A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法
WO2024111032A1 (ja) * 2022-11-21 2024-05-30 株式会社レゾナック Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット及び研磨方法
WO2024161603A1 (ja) * 2023-02-02 2024-08-08 株式会社レゾナック 研磨液、研磨液セット、研磨方法、部品の製造方法、及び、半導体部品の製造方法
WO2024161602A1 (ja) * 2023-02-02 2024-08-08 株式会社レゾナック 研磨液、研磨液セット、研磨方法、部品の製造方法、及び、半導体部品の製造方法
WO2024161614A1 (ja) * 2023-02-02 2024-08-08 株式会社レゾナック 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

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Publication number Publication date
KR102671229B1 (ko) 2024-06-03
CN113637412A (zh) 2021-11-12
EP3612608A4 (de) 2021-01-20
TW201839077A (zh) 2018-11-01
JP7132942B2 (ja) 2022-09-07
TWI663231B (zh) 2019-06-21
CN110520493A (zh) 2019-11-29
WO2018194792A1 (en) 2018-10-25
KR20190132537A (ko) 2019-11-27
JP2020517117A (ja) 2020-06-11
EP3612608A1 (de) 2020-02-26

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