CN110517968B - Warping degree control method and device - Google Patents

Warping degree control method and device Download PDF

Info

Publication number
CN110517968B
CN110517968B CN201910763955.5A CN201910763955A CN110517968B CN 110517968 B CN110517968 B CN 110517968B CN 201910763955 A CN201910763955 A CN 201910763955A CN 110517968 B CN110517968 B CN 110517968B
Authority
CN
China
Prior art keywords
value
deviation value
adjusting
detected
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910763955.5A
Other languages
Chinese (zh)
Other versions
CN110517968A (en
Inventor
王建新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Original Assignee
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Eswin Silicon Wafer Technology Co Ltd, Xian Eswin Material Technology Co Ltd filed Critical Xian Eswin Silicon Wafer Technology Co Ltd
Priority to CN201910763955.5A priority Critical patent/CN110517968B/en
Publication of CN110517968A publication Critical patent/CN110517968A/en
Application granted granted Critical
Publication of CN110517968B publication Critical patent/CN110517968B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/16Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Abstract

The embodiment of the invention provides a method and a device for controlling warping degree, wherein the device for controlling warping degree comprises the following steps: the device comprises a fixing structure, a measuring structure, an adjusting structure and a control structure which is respectively connected with the measuring structure and the adjusting structure; the first surface of the part to be detected is attached to the bearing surface of the fixing structure; the measuring structure is used for determining a deviation value between a measured value of the warping degree of the surface to be detected of the part and a standard value, and sending the deviation value to the control structure, wherein the surface to be detected is arranged opposite to the first surface; the control structure is used for determining the adjusting parameters of the adjusting structure according to the deviation value when the deviation value is not within the preset threshold value, and sending control signals containing the adjusting parameters to the adjusting structure; the adjustment structure is used for adjusting the position of the part according to the adjustment parameter, so that the deviation value is adjusted to be within a preset threshold value, and the problems of measurement and adjustment of warping degree in the machining process of the part with higher warping degree requirement can be solved.

Description

Method and device for controlling warping degree
Technical Field
The invention relates to the field of silicon wafer edge polishing, in particular to a control method and device for warping degree.
Background
In the machining process of parts with higher warping requirements, for example: in the edge polishing of a wafer, the levelness of the wafer can directly influence the result of the edge polishing, and particularly, after the vacuum chuck adsorbs the wafer, the surface of the wafer is easy to deform, so that the levelness of the edge of the wafer is changed due to the deformation, and finally, the edge polishing is asymmetric. At the same time, small differences in the wafers themselves can also lead to increased process end result uncertainty. Accordingly, it is desirable to provide an apparatus and method for measuring and adjusting warp.
Disclosure of Invention
The embodiment of the invention provides a method and a device for controlling warping degree, which are used for solving the problems of measuring and adjusting the warping degree in the machining process of parts with higher warping degree requirements.
In a first aspect, to solve the above technical problem, an embodiment of the present invention provides a warp control device, including: the device comprises a fixed structure, a measuring structure, an adjusting structure and a control structure which is respectively connected with the measuring structure and the adjusting structure;
the first surface of the part to be detected is attached to the bearing surface of the fixing structure;
the measurement structure is used for determining a deviation value between a measured value and a standard value of the warping degree of the surface to be detected of the part, and sending the deviation value to the control structure, wherein the surface to be detected is arranged opposite to the first surface;
the control structure is used for determining an adjusting parameter of the adjusting structure according to the deviation value when the deviation value is not within a preset threshold value, and sending a control signal containing the adjusting parameter to the adjusting structure;
the adjusting structure is used for adjusting the position of the part according to the adjusting parameter, so that the deviation value is adjusted to be within a preset threshold value.
Optionally, the measurement structure comprises: a transmitting part and a receiving part;
the transmitting part is used for transmitting light rays to the designated position of the surface to be detected, the light rays are reflected to the receiving part through the surface to be detected, and the receiving part is used for determining the deviation value between the measured value and the standard value of the warping degree of the surface to be detected according to the reflection position of the light rays on the receiving part.
Optionally, a plurality of through holes are disposed on the fixing structure, one end of each through hole is communicated with the adjusting structure, and the adjusting structure applies pressure to a plurality of positions on the first surface of the part through the plurality of through holes to adjust the position of the part, so that the deviation value is adjusted to a preset threshold value.
Optionally, the fixing structure comprises:
an adjustment unit including at least: the adjusting part is used for applying first pressure, second pressure and third pressure to the corresponding positions of the first surface, the first sector area, the second sector area and the third sector area through the first through hole, the second through hole and the third through hole respectively to adjust the position of the part, so that the deviation value is adjusted to a preset threshold value.
Optionally, the fixing structure further comprises:
the vacuum adsorption device comprises an annular adsorption part, wherein a plurality of vacuum holes are formed in the adsorption part, the vacuum holes are connected with a vacuum source, the part is adsorbed on the adsorption part through the vacuum holes, and the adjusting part is located in a ring of the adsorption part.
Optionally, the designated positions are respectively located on extension lines of center connecting lines of the circle centers of the adsorption parts and the centers of the first through hole, the second through hole and the third through hole.
Optionally, the control structure comprises:
a first calculating module, configured to determine, according to the deviation value, the pressures applied by the adjusting structures at the plurality of positions on the first surface when the deviation value is not within a preset threshold;
and the first execution module is used for sending the pressure applied by the adjusting structure at a plurality of positions on the first surface to the adjusting structure as the adjusting parameter.
Optionally, the control structure comprises:
a second calculating module, configured to calculate the first pressure, the second pressure and/or the third pressure applied by the adjusting structure on the first surface at the positions corresponding to the first sector-shaped area, the second sector-shaped area and the third sector-shaped area respectively according to the deviation value when the deviation value is not within a preset threshold value;
and the second execution module is used for sending the first pressure, the second pressure and/or the third pressure as an adjustment parameter to the control structure.
In a second aspect, an embodiment of the present invention further provides a method for controlling a warpage, where the method is applied to a device for controlling a warpage as described above, and the method for controlling a warpage includes:
the measuring structure determines a deviation value between a measured value and a standard value of the warping degree of the surface to be detected of the part and sends the deviation value to the control structure;
when the deviation value is not within the preset threshold value, the control structure determines an adjustment parameter of the adjustment structure according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure;
and the adjusting structure adjusts the position of the part according to the adjusting parameter, so that the deviation value is adjusted to be within a preset threshold value.
Optionally, when the offset value is not within the preset threshold, the determining, by the control structure, an adjustment parameter of the adjustment structure according to the offset value, and sending a control signal containing the adjustment parameter to the adjustment structure includes:
when the deviation value is not within the preset threshold value, the first calculation module determines the pressure exerted by the adjusting structure on the plurality of positions on the first surface according to the deviation value;
the first execution module sends the pressure exerted by the adjusting structure at a plurality of positions on the first surface to the adjusting structure as the adjusting parameter.
Optionally, when the offset value is not within the preset threshold, the determining, by the control structure, an adjustment parameter of the adjustment structure according to the offset value, and sending a control signal containing the adjustment parameter to the adjustment structure includes:
when the deviation value is not within the preset threshold value, the second calculation module calculates first pressure, second pressure and/or third pressure applied by the adjusting structure on the first surface at positions corresponding to the first sector-shaped area, the second sector-shaped area and the third sector-shaped area respectively according to the deviation value;
the second execution module sends the first pressure, the second pressure and/or the third pressure as an adjustment parameter to the control structure.
Optionally, the measuring structure determines a deviation value between a measured value and a standard value of the warpage of the surface to be detected of the part, and includes:
the emitting component emits light rays to the designated position of the surface to be detected, and the light rays are reflected to the receiving component through the surface to be detected;
and the receiving part determines a deviation value between the measured value and the standard value of the warping degree of the surface to be detected according to the reflection position of the light rays on the receiving part.
Optionally, the designated positions are respectively located on extension lines connecting centers of the adsorption part and centers of the first through hole, the second through hole and the third through hole.
The embodiment of the invention has the following beneficial effects:
in the embodiment of the invention, a measurement structure is used for measuring a deviation value of a standard value and a measured value of the warping degree of the surface to be detected, the deviation value is sent to the control structure, when the deviation value is not within a preset threshold value, the control structure determines an adjustment parameter of the adjustment structure according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure, and the adjustment structure adjusts the position of a part according to the adjustment parameter, so that the deviation value is adjusted to be within the preset threshold value. Therefore, the control device provided by the embodiment of the invention can measure and adjust the warping degree of the surface to be detected in real time, and solves the problem of measuring and adjusting the warping degree in the machining process of parts with higher warping degree requirements.
Drawings
Fig. 1 is a schematic view of a warp control device according to an embodiment of the present invention;
FIG. 2 is a schematic view of a fastening structure according to an embodiment of the present invention;
fig. 3 is a schematic flow chart illustrating a method for controlling warp according to an embodiment of the present invention;
fig. 4 is a second flowchart illustrating a warpage control method according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
The terms first, second and the like in the description and in the claims of the present invention are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein.
Referring to fig. 1, an embodiment of the present invention provides a control device for a warpage, which can be used to measure and adjust a warpage of a component to be detected. The control device of the warping degree can be used in the processing process of parts with higher warping degree requirements, for example: the warping degree control device can be used in the polishing process of wafers or silicon wafers and the like. The control device of this angularity includes: a fixed structure 11, a measuring structure 12, an adjusting structure 13 and a control structure 14 connected to the measuring structure 12 and the adjusting structure 13, respectively.
Wherein, the first surface of the part to be detected is attached to the bearing surface of the fixed structure 11; the measurement structure 12 is configured to determine a deviation value between a measured value and a standard value of the warpage of the surface to be detected of the component, and send the deviation value to the control structure 14, where the surface to be detected is arranged opposite to the first surface; the control structure 14 is configured to determine an adjustment parameter of the adjustment structure 13 according to the deviation value when the deviation value is not within a preset threshold, and send a control signal containing the adjustment parameter to the adjustment structure 13; the adjusting structure 13 is configured to adjust the position of the component according to the adjusting parameter, so that the deviation value is adjusted to be within a preset threshold.
In the embodiment of the invention, the warping degree is used for representing the edge levelness of the surface to be detected of the part. For example: and when the warping degree is 0mm/m, the surface to be detected is a horizontal plane. Further, the standard value of the warpage may be a fixed value or a value range, and the standard value of the warpage may be determined as required, for example: the standard value of the warpage can be set to 0mm/m.
It should be noted that the above description of the standard value of the warpage is only an example and is not limiting, and it should be understood that the embodiment of the present invention does not specifically limit the value range of the standard value of the warpage.
In the embodiment of the present invention, the component may be a silicon wafer or a wafer. It should be noted that the control device for warp according to the embodiment of the present invention may be used in the process of machining a part with a high requirement on warp, and the above description of the types of parts is only an example and is not limited.
In the present embodiment, the control parameter is a parameter used by the control structure 14 to control the position of the part. The parameter may be the pressure applied by the adjustment structure 13 to the first surface of the part, but is not limited thereto.
In the embodiment of the present invention, the measurement structure 12 measures a deviation value of a standard value and a measured value of the warpage of the surface to be detected, and sends the deviation value to the control structure 14, when the deviation value is not within a preset threshold, the control structure 14 determines an adjustment parameter of the adjustment structure 13 according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure 13, and the adjustment structure 13 adjusts the position of the component according to the adjustment parameter, so that the deviation value is adjusted to be within the preset threshold. Therefore, the control device provided by the embodiment of the invention can measure and adjust the warping degree of the surface to be detected in real time, and solves the problem of measuring and adjusting the warping degree in the machining process of parts with higher warping degree requirements.
With continued reference to fig. 1, further, the measurement structure 12 includes: a transmitting section 121 and a receiving section 122; the emitting component 121 is configured to emit light to a designated position of the surface to be detected, the light is reflected to the receiving component 122 through the surface to be detected, and the receiving component 122 is configured to determine a deviation value between a measured value and a standard value of the warpage of the surface to be detected according to a reflection position of the light on the receiving component 122.
It should be noted that the receiving component 122 is located at a position that ensures that the light emitted by the emitting component 121 can be received. Further, the relative positions of the transmitting part 121 and the receiving part 122 to the fixed structure 11, respectively, may be set to be fixed. Assuming that the warping degree is a standard value, since the specified position and the position of the emitting part 121 are fixed, the reflection angle of the light ray can be calculated according to the law of reflection of light, and thus the first reflection position of the light ray on the receiving part 122 can be determined, and the first reflection position can be determined as a standard reflection position. Conversely, in the actual measurement process of the warpage of the surface to be detected, the actual reflection position of the light beam on receiving component 122 can be determined, and the measured value of the warpage of the surface to be detected can be converted according to the actual reflection position, so that the deviation value between the measured value of the warpage of the surface to be detected and the standard value can be determined.
Further, the emitting component 121 may be disposed near an edge of the part, and the emitting component 121 includes at least a laser emitter, but is not limited thereto.
Further, the receiving part 122 includes: and the light receiving plate is provided with a standard reflection position corresponding to the standard value of the warping degree. After the emitting component 121 emits the light to the designated position of the surface to be detected, firstly, the actual reflection position of the light on the light receiving plate is determined, and according to the light reflection law and the actual reflection position, the measured value of the warpage corresponding to the actual reflection position can be determined, so as to determine the deviation value between the measured value of the warpage and the standard value.
The area of the light-receiving plate can be determined according to the range of the received light, and the size of the area of the light-receiving plate is not particularly limited in the embodiment of the present invention.
In the embodiment of the present invention, the deviation value between the measured value of the warpage and the standard value can be determined in various ways, and a preferred way thereof will be described below.
The light-receiving plate can be provided with scales, the scales can use the standard reflection position as a center, a plurality of scale values are set according to certain precision, and the scale values can be used for representing the value of the warping degree of the surface to be detected. For example: the scale value of the position of the standard reflection position may be set to 0, a plurality of scale values may be set with the standard reflection position as a center, the precision of each scale is 1mm/m, and if the scale value of the actual reflection position of the light is 3, the deviation value between the standard value and the measured value of the warpage is 3mm/m.
Referring to fig. 2, a plurality of through holes 111 are formed in the fixing structure 11, one end of each through hole 111 is communicated with the adjusting structure 13, and the adjusting structure 13 applies pressure to a plurality of positions on the first surface of the part through the plurality of through holes 111 to adjust the position of the part, so that the deviation value is adjusted to a preset threshold value.
In some embodiments, a gas or liquid may be injected into the through hole 111 to apply pressure to the first surface of the part, it being understood that the adjustment structure 13 may inject a gas or liquid into the through hole 111, such as: the adjustment structure 13 includes: and an air compressor for injecting air into the through hole 111.
Further, the through hole 111 may be a circular hole, an elongated circular hole, a square hole, or another polygonal hole, and it should be noted that the embodiment of the present invention is not limited to the case where the through hole 111 is a circular hole as shown in fig. 2.
With continued reference to fig. 2, further, the fixed structure 11 comprises: an adjusting part 112 and a ring-shaped suction part 113.
Wherein the adjusting unit 112 at least comprises: a first fan-shaped region 1121 provided with a first through hole a ', a second fan-shaped region 1122 provided with a second through hole B ', and a third fan-shaped region 1123 provided with a third through hole C ', the areas of the first fan-shaped region 1121, the second fan-shaped region 1122, and the third fan-shaped region 1123 are equal and jointly form a circle, the first through hole a ', the second through hole B ', and the third through hole C ' are all communicated with the control structure 14, and the adjusting portion 112 is configured to apply a first pressure, a second pressure, and a third pressure to positions on the first surface corresponding to the first fan-shaped region 1121, the second fan-shaped region 1122, and the third fan-shaped region 1123 through the first through hole a ', the second through hole B ', and the third through hole C ', respectively, to adjust the position of the component, so that the deviation value is adjusted to a preset threshold value. The adsorption part 113 is provided with a plurality of vacuum holes 1131, the vacuum holes 1131 are connected with a vacuum source, the component is adsorbed on the adsorption part 113 through the vacuum holes 1131, and the adjusting part 112 is located in the ring of the adsorption part 113.
Further, the through hole 111 includes: a first through hole a ', a second through hole B ', and a third through hole C ' may be disposed at the centers of the first, second, and third fan-shaped regions 1121, 1122, and 1123, respectively. In addition, the first through hole a ', the second through hole B' and the third through hole C 'may be disposed at other positions, but it is required to ensure that the distance from the center of the first through hole a', the distance from the center of the second through hole B 'and the distance from the center of the third through hole C' to each sector area are equal, so that it is more convenient to adjust the first pressure, the second pressure and/or the third pressure at the same time.
Specifically, the designated positions are respectively located on extension lines connecting centers of the circle centers of the adsorption part 113 and centers of the first through hole a ', the second through hole B ', and the third through hole C '. For example: as shown in fig. 2, the designated positions include: the device comprises a first designated position A, a second designated position B and a third designated position C, wherein the sending component sends light rays to the first designated position A, the second designated position B and the third designated position C respectively, so that the measurement values of the warping degrees of the surface to be detected at the first designated position A, the second designated position B and the third designated position C respectively can be measured, and the measurement values are a first measurement value, a second measurement value and a third measurement value; correspondingly, the standard value of the warpage comprises: a first standard value corresponding to the first specified position a, a second standard value corresponding to the second specified position B, and a third standard value corresponding to the third specified position C; comparing the first measured value, the second measured value and the third measured value with a first standard value, a second standard value and a third standard value respectively, and determining a first deviation value of the first measured value and the first standard value, a second deviation value of the second standard value and the second measured value and a third deviation value of the third measured value and the third standard value; the first pressure, the second pressure and/or the third pressure are adjusted based on the first offset value, the second offset value and/or the third offset value, respectively.
Further, the control structure 14 includes: the device comprises a first computing module and a first execution module connected with the first computing module. Wherein the first calculating module is configured to determine the pressure applied by the adjusting structure 13 at a plurality of positions on the first surface according to the deviation value when the deviation value is not within the preset threshold; the first execution module is configured to send the pressure applied by the adjustment structure 13 at a plurality of positions on the first surface to the adjustment structure 13 as the adjustment parameter.
Further, the control structure 14 includes: the system comprises a second computing module and a second execution module connected with the second computing module. Wherein the second calculating module is configured to calculate the first pressure, the second pressure and/or the third pressure applied by the adjusting structure 13 on the first surface corresponding to the first fan-shaped region 1121, the second fan-shaped region 1122 and the third fan-shaped region 1123 respectively according to the deviation value when the deviation value is not within a predetermined threshold value; the second execution module is configured to send the first pressure, the second pressure, and/or the third pressure as an adjustment parameter to the control structure 14.
On the basis of the above embodiment, the control structure 14 further includes: a receiving module and a judging module, where the receiving module is used to receive a control signal sent by the measurement structure 12, and the control signal contains a control parameter of the control structure 14. The judging module is used for judging whether the deviation value is within a preset threshold value, and starting the first calculating module or the second calculating module when the deviation value is not within the preset threshold value; and when the deviation value is within a preset threshold value, performing the next process on the part to be detected.
In the embodiment of the present invention, the measuring structure 12 measures, according to an optical lever principle, deviation values of standard values and measured values of warpage of a plurality of designated positions of the surface to be detected, and sends the deviation values to the control structure 14, when the deviation values are not within a preset threshold, the control structure 14 determines an adjustment parameter of the adjusting structure 13 according to the deviation values, where the adjustment parameter may be a pressure applied to the first surface of the component by the adjustment, and the adjusting structure 13 adjusts the warpage of the component in real time by adjusting the pressure applied to the first surface of the component, so as to ensure that the deviation values are within the preset threshold. Therefore, the control method of the embodiment of the invention adopts the optical lever principle to carry out closed loop control on the warping degree of the part, can solve the problems of measuring and adjusting the warping degree in the processing process of the part with higher warping degree requirement, and can also carry out micro adjustment on the deformation of the part through air compression.
In order to solve the problem of measuring and adjusting the warping degree in the machining process of a part with a higher warping degree requirement, the embodiment of the invention further provides a warping degree control method, the implementation principle of the warping degree control method is similar to that of a warping degree control device, and the similar parts are not repeated.
Referring to fig. 3, an embodiment of the present invention further provides a method for controlling a warp degree, where the method for controlling a warp degree can be applied to the device for controlling a warp degree, and the specific steps of the method for controlling a warp degree are as follows:
step 301: the measurement structure 12 determines a deviation value between a measured value and a standard value of the warpage of the surface to be detected of the part, and sends the deviation value to the control structure 14;
in the embodiment of the invention, the warping degree is used for representing the edge levelness of the surface to be detected of the part. For example: and when the warping degree is 0mm/m, the surface to be detected is a horizontal plane. For example: the standard value of the warpage can be set to 0mm/m.
It should be noted that the above description of the standard value of the warpage is only an example and is not limiting, and it should be understood that the embodiment of the present invention does not specifically limit the value range of the standard value of the warpage.
In the embodiment of the present invention, the component may be a silicon wafer or a wafer. It should be noted that the warp degree control device according to the embodiment of the present invention may be used in a process of machining a part with a high warp degree requirement, and the above description about the kind of the part is only an example and is not limited.
Step 302: when the deviation value is not within the preset threshold, the control structure 14 determines an adjustment parameter of the adjustment structure 13 according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure 13;
in the embodiment of the present invention, the preset threshold may be a fixed value or a value range, and the preset threshold may be determined according to needs.
In the present embodiment, the control parameter is a parameter used by the control structure 14 to control the position of the part. The parameter may be the pressure applied by the adjustment structure 13 to the first surface of the part, but is not limited thereto.
Step 303: the adjusting structure 13 adjusts the position of the part according to the adjusting parameter, so that the deviation value is adjusted to be within a preset threshold value.
In this embodiment of the present invention, step 303 specifically includes: when the deviation value is not within the preset threshold value, the first calculation module determines the pressure applied by the adjusting structure 13 at the plurality of positions on the first surface according to the deviation value; the second execution module sends the pressure exerted by the adjustment structure 13 at the plurality of locations of the first surface as the adjustment parameter to the adjustment structure 13.
In this embodiment of the present invention, step 303 specifically includes: when the deviation value is not within the preset threshold, the second calculating module calculates a first pressure, a second pressure and/or a third pressure applied by the adjusting structure 13 on the first surface corresponding to the first fan-shaped region 1121, the second fan-shaped region 1122 and the third fan-shaped region 1123, respectively, according to the deviation value; the second execution module sends the first pressure, the second pressure and/or the third pressure as adjustment parameters to the control structure 14.
For example: as shown in fig. 2, the designated positions include: the device comprises a first specified position A, a second specified position B and a third specified position C, wherein the sending component sends light rays to the first specified position A, the second specified position B and the third specified position C respectively, so that the measured values of the warping degrees of the surface to be detected at the first specified position A, the second specified position B and the third specified position C respectively can be measured, and the measured values are a first measured value, a second measured value and a third measured value; correspondingly, the standard value of the warpage comprises: a first standard value corresponding to the first specified position a, a second standard value corresponding to the second specified position B, and a third standard value corresponding to the third specified position C; comparing the first measured value, the second measured value and the third measured value with a first standard value, a second standard value and a third standard value respectively, and determining a first deviation value of the first measured value and the first standard value, a second deviation value of the second standard value and the second measured value and a third deviation value of the third measured value and the third standard value; and adjusting the first pressure, the second pressure and/or the third pressure according to the first deviation value, the second deviation value and/or the third deviation value respectively.
In this embodiment of the present invention, step 301 specifically includes: the emitting component 121 emits light to a designated position of the surface to be detected, and the light is reflected to the receiving component 122 through the surface to be detected; the receiving part 122 determines a deviation value between a measured value and a standard value of the warpage of the surface to be detected according to the reflection position of the light on the receiving part 122.
In the embodiment of the present invention, the deviation value between the measured value of the warpage and the standard value can be determined in various ways, and a preferred way thereof will be described below.
The light-receiving plate can be provided with scales, the scales can use the standard reflection position as a center, a plurality of scale values are set according to certain precision, and the scale values can be used for representing the value of the warping degree of the surface to be detected. For example: the scale value of the position of the standard reflection position may be set to 0, a plurality of scale values may be set with the standard reflection position as a center, the precision of each scale is 1mm/m, and if the scale value of the actual reflection position of the light is 3, the deviation value between the standard value and the measured value of the warpage is 3mm/m.
With continued reference to fig. 2, further, the designated positions are respectively located on the extension lines of the centers of the adsorption part 113 and the center connecting lines of the first through hole a ', the second through hole B ' and the third through hole C '.
In the embodiment of the present invention, the measurement structure 12 measures a deviation value of a standard value and a measured value of the warpage of the surface to be detected, and sends the deviation value to the control structure 14, when the deviation value is not within a preset threshold, the control structure 14 determines an adjustment parameter of the adjustment structure 13 according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure 13, and the adjustment structure 13 adjusts the position of the component according to the adjustment parameter, so that the deviation value is adjusted to be within the preset threshold. Therefore, the control method provided by the embodiment of the invention can be used for measuring and adjusting the warping degree of the surface to be detected in real time, and the problem of measuring and adjusting the warping degree in the machining process of parts with higher warping degree requirements is solved.
In order to solve the problem of measuring and adjusting the warping degree in the machining process of a part with a higher warping degree requirement, the embodiment of the invention also provides another warping degree control method, the implementation principle of the warping degree control method is similar to that of the warping degree control device, and the similar parts are not repeated.
Referring to fig. 4, an embodiment of the present invention further provides a method for controlling a warp degree, where the method for controlling a warp degree can be applied to a device for controlling a warp degree as described above, and the specific steps of the method for controlling a warp degree are as follows:
step 401: the measurement structure 12 determines a deviation value between a measured value and a standard value of the warpage of the surface to be detected of the part, and sends the deviation value to the control structure 14;
in the embodiment of the present invention, the implementation principle of step 401 is similar to that of step 301, and the description of the similar parts is omitted.
Step 402: the control structure 14 determines whether the deviation value is within the preset threshold; if the deviation value is within the preset threshold, step 405 is executed to perform the next process on the part to be detected, for example: and polishing the part to be detected. If the deviation value is not within the preset threshold, go to step 403.
Step 403: when the deviation value is not within the preset threshold, the control structure 14 determines an adjustment parameter of the adjustment structure 13 according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure 13;
in the embodiment of the present invention, the implementation principle of step 403 is similar to that of step 302, and the description of the similar parts is omitted.
Step 404: the adjusting structure 13 adjusts the position of the part according to the adjusting parameter, so that the deviation value is adjusted to be within a preset threshold value;
in the embodiment of the present invention, the implementation principle of step 404 is similar to that of step 303, and the description of the similar parts is omitted.
Step 405: and carrying out the next process on the part to be detected.
In the embodiment of the invention, the next process can carry out polishing treatment on the part to be detected.
In the embodiment of the present invention, the measurement structure 12 measures a deviation value between a standard value and a measured value of the warpage of the surface to be detected, and sends the deviation value to the control structure 14, when the deviation value is not within a preset threshold, the control structure 14 determines an adjustment parameter of the adjustment structure 13 according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure 13, and the adjustment structure 13 adjusts the position of a component according to the adjustment parameter, so that the deviation value is adjusted to be within the preset threshold. Therefore, the control method of the embodiment of the invention can measure and adjust the warping degree of the surface to be detected in real time, and solves the problem of measuring and adjusting the warping degree in the machining process of parts with higher warping degree requirements.
While the foregoing is directed to the preferred embodiment of the present invention, it will be appreciated by those skilled in the art that various changes and modifications may be made therein without departing from the principles of the invention as set forth in the appended claims.

Claims (6)

1. A warp control device, comprising: the device comprises a fixed structure, a measuring structure, an adjusting structure and a control structure which is respectively connected with the measuring structure and the adjusting structure;
the first surface of the part to be detected is attached to the bearing surface of the fixing structure;
the measurement structure is used for determining a deviation value between a measured value and a standard value of the warping degree of the surface to be detected of the part, and sending the deviation value to the control structure, wherein the surface to be detected is arranged opposite to the first surface;
the control structure is used for determining an adjusting parameter of the adjusting structure according to the deviation value when the deviation value is not within a preset threshold value, and sending a control signal containing the adjusting parameter to the adjusting structure;
the adjusting structure is used for adjusting the warping degree of the surface to be detected of the part according to the adjusting parameters, so that the deviation value is adjusted to be within a preset threshold value;
the fixing structure includes:
an adjustment unit including at least: the adjusting part is used for applying first pressure, second pressure and third pressure to positions, corresponding to the first sector area, the second sector area and the third sector area, on the first surface through the first through hole, the second through hole and the third through hole respectively to adjust the warping degree of the surface to be detected of the part, so that the deviation value is adjusted to a preset threshold value;
the control structure includes:
a second calculating module, configured to calculate the first pressure, the second pressure and/or the third pressure applied by the adjusting structure on the first surface at the positions corresponding to the first sector-shaped area, the second sector-shaped area and the third sector-shaped area respectively according to the deviation value when the deviation value is not within a preset threshold value;
the second execution module is used for sending the first pressure, the second pressure and/or the third pressure as an adjustment parameter to the control structure;
the fixing structure further includes:
the part adsorption device comprises an annular adsorption part, a vacuum source and a part adjusting part, wherein a plurality of vacuum holes are formed in the adsorption part, the vacuum holes are connected with the vacuum source, the part is adsorbed on the adsorption part through the vacuum holes, and the part adjusting part is positioned in a ring of the adsorption part;
the measurement structure includes: a transmitting part and a receiving part;
the transmitting part is used for transmitting light rays to a specified position of the surface to be detected, the light rays are reflected to the receiving part through the surface to be detected, and the receiving part is used for determining a deviation value between a measured value and a standard value of the warping degree of the surface to be detected according to the reflection position of the light rays on the receiving part;
the designated positions are respectively positioned on the extension lines of the center lines of the circle of the adsorption part and the center connecting lines of the first through hole, the second through hole and the third through hole, and the designated positions are positioned between the adsorption part and the edge of the part.
2. The apparatus for controlling warpage according to claim 1, wherein a plurality of through holes are disposed on the fixing structure, one end of each through hole is communicated with the adjusting structure, and the adjusting structure applies pressure to a plurality of positions on the first surface of the component through the plurality of through holes to adjust the warpage of the surface to be detected of the component, such that the deviation value is adjusted to a preset threshold value.
3. The warp control device of claim 2, wherein said control structure comprises:
the first calculation module is used for determining the pressure applied by the adjusting structure on a plurality of positions of the first surface according to the deviation value when the deviation value is not within a preset threshold value;
and the first execution module is used for sending the pressure applied by the adjusting structure at a plurality of positions on the first surface to the adjusting structure as the adjusting parameter.
4. A warp control method, applied to a warp control device according to any one of claims 1 to 3;
the control method of the warping degree comprises the following steps:
the measuring structure determines a deviation value between a measured value and a standard value of the warping degree of the surface to be detected of the part and sends the deviation value to the control structure;
when the deviation value is not within the preset threshold value, the control structure determines an adjustment parameter of the adjustment structure according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure;
the adjusting structure adjusts the warping degree of the surface to be detected of the part according to the adjusting parameters, so that the deviation value is adjusted to be within a preset threshold value;
when the deviation value is not within the preset threshold, the control structure determines an adjustment parameter of the adjustment structure according to the deviation value, and sends a control signal containing the adjustment parameter to the adjustment structure, including:
when the deviation value is not within the preset threshold value, the second calculation module calculates first pressure, second pressure and/or third pressure applied by the adjusting structure on the first surface at positions corresponding to the first sector-shaped area, the second sector-shaped area and the third sector-shaped area respectively according to the deviation value;
and the second execution module sends the first pressure, the second pressure and/or the third pressure as an adjustment parameter to the control structure.
5. The method of controlling warpage according to claim 4, wherein when the deviation value is not within the predetermined threshold, the control structure determines an adjustment parameter of the adjustment structure according to the deviation value and sends a control signal containing the adjustment parameter to the adjustment structure, comprising:
when the deviation value is not within the preset threshold value, the first calculation module determines the pressure exerted by the adjusting structure on the plurality of positions on the first surface according to the deviation value;
the first execution module sends the pressure applied by the adjusting structure at a plurality of positions on the first surface to the adjusting structure as the adjusting parameter.
6. The warp control method according to claim 4, wherein the measuring structure determines a deviation value between a measured value and a standard value of the warp of the surface to be inspected of the part, including:
the emitting component emits light rays to the designated position of the surface to be detected, and the light rays are reflected to the receiving component through the surface to be detected;
and the receiving part determines a deviation value between the measured value of the warping degree of the surface to be detected and a standard value according to the reflection position of the light rays on the receiving part.
CN201910763955.5A 2019-08-19 2019-08-19 Warping degree control method and device Active CN110517968B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910763955.5A CN110517968B (en) 2019-08-19 2019-08-19 Warping degree control method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910763955.5A CN110517968B (en) 2019-08-19 2019-08-19 Warping degree control method and device

Publications (2)

Publication Number Publication Date
CN110517968A CN110517968A (en) 2019-11-29
CN110517968B true CN110517968B (en) 2022-12-20

Family

ID=68625636

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910763955.5A Active CN110517968B (en) 2019-08-19 2019-08-19 Warping degree control method and device

Country Status (1)

Country Link
CN (1) CN110517968B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023236064A1 (en) * 2022-06-07 2023-12-14 超能高新材料股份有限公司 Substrate testing method and testing device therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125000A (en) * 1994-10-24 1996-05-17 Nec Kyushu Ltd Wafer chuck
JP2001267404A (en) * 2000-03-22 2001-09-28 Hitachi Electronics Eng Co Ltd Substrate mounting apparatus
TW201507058A (en) * 2013-07-18 2015-02-16 Nsk Technology Co Ltd Substrate holding device, abutting exposure device, and proximal exposure device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7214548B2 (en) * 2004-08-30 2007-05-08 International Business Machines Corporation Apparatus and method for flattening a warped substrate
KR100877102B1 (en) * 2007-05-28 2009-01-09 주식회사 하이닉스반도체 Apparatus for thermal process and thermal processing method using the same
CN103503112B (en) * 2012-03-30 2016-08-17 新东工业株式会社 The crooked correction equipment of substrates for semiconductor elements and detorsion method
CN104315991B (en) * 2014-10-31 2017-12-15 合肥鑫晟光电科技有限公司 The measurement apparatus and measuring method of the angularity of substrate, touch-screen and preparation method
CN104538331B (en) * 2014-12-12 2018-06-05 通富微电子股份有限公司 A kind of device and method of silicon wafer warpage processing
CN204289408U (en) * 2014-12-29 2015-04-22 昆山国显光电有限公司 Product warpage apparatus for correcting
KR102467069B1 (en) * 2016-06-29 2022-11-15 세메스 주식회사 Method for gripping warpage wafer of chuck
JP7164289B2 (en) * 2016-09-05 2022-11-01 東京エレクトロン株式会社 Position-Specific Tuning of Bow-Controlling Stress to Control Overlay During Semiconductor Processing
CN107170696B (en) * 2017-04-21 2020-03-31 青岛杰生电气有限公司 Wafer growth control device and method
JP6945367B2 (en) * 2017-07-05 2021-10-06 東京エレクトロン株式会社 Board warp monitoring device, board processing device using this, and board warpage monitoring method
CN109273398B (en) * 2018-09-28 2023-01-20 上海微松工业自动化有限公司 Wafer flattening and fixing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125000A (en) * 1994-10-24 1996-05-17 Nec Kyushu Ltd Wafer chuck
JP2001267404A (en) * 2000-03-22 2001-09-28 Hitachi Electronics Eng Co Ltd Substrate mounting apparatus
TW201507058A (en) * 2013-07-18 2015-02-16 Nsk Technology Co Ltd Substrate holding device, abutting exposure device, and proximal exposure device

Also Published As

Publication number Publication date
CN110517968A (en) 2019-11-29

Similar Documents

Publication Publication Date Title
US9997385B2 (en) Centering substrates on a chuck
TWI789094B (en) Method and apparatus for measuring process kit ‎centering
KR20170134622A (en) Film thickness measuring method, film thickness measuring apparatus, polishing method and polishing apparatus
CN110517968B (en) Warping degree control method and device
WO2018153008A1 (en) Laser positioning apparatus and laser positioning method
EP3176539A1 (en) Device for measuring and method for measuring surface shape
US10611032B2 (en) Measurement system
CN107270839B (en) Device and method for measuring coaxiality of rotator in hole
EP2177872A1 (en) Optical wave interference measuring apparatus
CN100401465C (en) System and method for integrated multi-use optical alignment
CN105651188B (en) A kind of detection method and device of bondline thickness
KR101573274B1 (en) Semiconductor die bonding apparatus and method of bonding stage alignment thereof
CN106679592B (en) A kind of angle calibration system device and calibration method
CN112557768A (en) On-chip antenna test system and test method
CN217506157U (en) Position monitoring device and detection equipment
CN116031125A (en) Ion implanter and method for determining angle of wafer fixing plate
US7742160B2 (en) Determining angle of incidence with respect to workpiece
KR20160088110A (en) Teaching Jig for Aligning Wafer and Teaching Method Thereof
CN216749825U (en) Wafer detection device and semiconductor equipment
CN218628173U (en) Parallelism detection device
CN109945796A (en) A kind of contactless measuring system and method for the microstrain of rock sample circumferential direction
KR20190088413A (en) Polishing apparatus
CN115249605A (en) Focus ring alignment measurement apparatus, system, method and plasma processing apparatus
KR20140123860A (en) Thin film deposition apparatus and method for forming thin film using the same
CN114894712B (en) Optical measuring equipment and correction method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20211018

Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province

Applicant after: Xi'an yisiwei Material Technology Co.,Ltd.

Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065

Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province

Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd.

Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province

Patentee before: Xi'an yisiwei Material Technology Co.,Ltd.

Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

CP01 Change in the name or title of a patent holder