CN110491952A - 一种pid抗性高的perc电池组件及其制备方法 - Google Patents
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Abstract
本发明公开了一种PID抗性高的PERC电池组件及其制备方法,涉及太阳能电池技术领域,本发明包括衬底层,衬底层顶面从下到上依次设置有扩散层、SiOx正钝化层和SixNy正减反钝化保护膜层,衬底层底面从上到下依次设置有SiOx背钝化层、AlOx背钝化膜层和SixNy背减反钝化保护膜层,其特征在于,SixNy正减反钝化保护膜层的厚度为75‑95nm,其折射率为2.08‑2.13,SixNy背减反钝化保护膜层的厚度为90‑160nm,SixNy背减反钝化保护膜层的膜层数量为至少2层,且距离衬底层最近一层的折射率≥2.1,AlOx背钝化膜层的厚度为2‑28nm,AlOx背钝化膜层的折射率为1.56‑1.76,本发明通过优化电池组件排布及各层组件厚度和折射率,优化制备工艺,制得的电池抗PID性能高。
Description
技术领域
本发明涉及太阳能电池技术领域,更具体的是涉及一种PID抗性高的PERC电池组件及其制备方法。
背景技术
近年来,PID效应引发的光伏电池可靠性问题越来越受重视,PID效应(PotentialInduced Degradation),即电势差引起的组件功率衰减,又叫电位诱导衰减。PID现象产生的机理为:水汽通过封边的硅胶或背板进入组件内部,或组件在长时间的高温高湿环境下,组件EVA中酯酸键产生分解,产生可以自由移动的醋酸根阴离子,醋酸根阴离子和玻璃中的纯碱(Na2CO3)反应将Na+析出,在电池内部电场作用下,Na+通过SiNx层漂移至硅基体,破坏PN结,最终导致组件端功率出现较大程度的衰减。
随着PID问题的增加,目前解决PERC电池PID效应的方案是采用高折射率的钝化减反膜,如专利申请号为“CN201310008588.0”公开的“能抗PID效应的太阳电池钝化减反膜”,其有两种结构,第一种:该钝化减反膜的底层为钝化减反层SiNx,折射率为2.0-2.1,厚度为70-80nm;该钝化减反膜的顶层为导电层非晶硅层,厚度为3-10nm。第二种:该钝化减反膜的底层为钝化层SiNx,折射率为2.2-2.3,厚度为9-11nm;b、该钝化减反膜的中间层为导电层非晶硅层,厚度为3-10nm;该钝化减反膜的顶层为减反层SiNx层,折射率为2.0-2.1,厚度为60-70nm。而造成PID效应的原因主要在于:(1)衬底材料电阻率及掺杂;(2)膜层工艺;(3)组件封装材料;(4)组件阵列排布;(5)组件工作环境;(6)逆变器的类型和接地方式。由上述PID失效的主要因素分析可以得出,PID失效并不能单纯依靠钝化减反膜成分和厚度的改变,其PID失效的优化需要依赖于综合性的工艺改进、材料优化、组件排布和结构改进等。
故如何解决上述技术问题,对于本领域技术人员来说很有现实意义。
发明内容
本发明的目的在于:为了解决现有PERC电池单纯依靠钝化减反膜成分和厚度的改变来解决PID效应,电池抗PID失效的性能较差的技术问题,本发明提供一种PID抗性高的PERC电池组件及其制备方法。
本发明为了实现上述目的具体采用以下技术方案:
一种PID抗性高的PERC电池组件,包括衬底层,衬底层顶面从下到上依次设置有扩散层、SiOx正钝化层和SixNy正减反钝化保护膜层,衬底层底面从上到下依次设置有SiOx背钝化层、AlOx背钝化膜层和SixNy背减反钝化保护膜层,SixNy正减反钝化保护膜层的厚度为75-95nm,其折射率为2.08-2.13,SixNy背减反钝化保护膜层的厚度为90-160nm,SixNy背减反钝化保护膜层的膜层数量为至少2层,且距离衬底层最近一层的折射率≥2.1,AlOx背钝化膜层的厚度为2-28nm,AlOx背钝化膜层的折射率为1.56-1.76。
进一步地,SixNy背减反钝化保护膜层的厚度为100nm。
进一步地,SixNy背减反钝化保护膜层的膜层数量为5层。
进一步地,SixNy正减反钝化保护膜层上表面设置有正电极,SixNy背减反钝化保护膜层下表面设置有背电场,背电场底部设置有背电极。
进一步地,背电场的厚度为5-30μm。
一种PID抗性高的PERC电池组件的制备方法,包括以下步骤:
S1:根据管式PECVD工艺,在衬底层顶面依次制备扩散层和SiOx正钝化层,在衬底层底面制备SiOx背钝化层;
S2:然后在SiOx背钝化层底面通过ALD工艺沉积形成AlOx背钝化膜层,沉积的圈数为24-36圈;
S3:然后在SiOx正钝化层顶面镀膜形成SixNy正减反钝化保护膜层,并进行退火,退火时间为17-44min,退火温度在380-480℃;
S4:然后在AlOx背钝化膜层底面镀膜形成SixNy背减反钝化保护膜层,并进行退火,退火时间为17-44min,退火温度在380-480℃。
进一步地,还包括以下步骤:
S01:在SixNy背减反钝化保护膜层底面通过532nm-1064nm的激光进行局部开槽,局部开槽区域占比0.5%-6%;
S02:在SixNy背减反钝化保护膜层底面通过丝网印刷得到背电场;
S03:在对应局部开槽镂空区域,并在非背电场区域进行丝网印刷银浆料并烘干,形成背电极;
S04:在SixNy正减反钝化保护膜层顶面进行丝网印刷正电极并烘干烧结。
本发明的有益效果如下:
1、本发明优化了PERC电池组件关键部件排布组合,且优化了各层厚度及折射率,优化SixNy正减反钝化保护膜层的厚度,确保对SiOx正钝化层的保护,同时优化AlOx背钝化膜层和SixNy背减反钝化保护膜层的厚度,提高折叠率,形成高致密膜层,同时SixNy背减反钝化保护膜层的膜层数量为至少2层,增强各层膜之间致密性和最终厚度,更好的保护AlOx背钝化膜层,增强AlOx背钝化膜层的稳定性,从而综合各方面来提高PERC电池的抗PID能力。
2、本发明制备方法通过优化AlOx背钝化膜层沉积圈数,可提高PERC电池PID抗性,同时严格控制镀膜顺序,依次按照AlOx背钝化膜层、SixNy正减反钝化保护膜层和SixNy背减反钝化保护膜层的顺序镀膜,增加了SixNy背减反钝化保护膜层的致密性,并严格控制退火时间和温度,综合提高PERC电池的抗PID能力。
附图说明
图1是本发明一种PID抗性高的PERC电池组件的结构示意图;
图2是本发明中的AlOx背钝化膜层沉积圈数对PID的影响效果图。
附图标记:1-衬底层,2-扩散层,3-SiOx正钝化层,4-SixNy正减反钝化保护膜层,5-正电极,6-SiOx背钝化层,7-AlOx背钝化膜层,8-SixNy背减反钝化保护膜层,9-背电场,10-背电极。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图和实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本发明,并不用于限定本发明。
在本申请的描述中,需要理解的是,术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。
以下结合实施例对本发明的特征和性能作进一步的详细描述。
实施例1
如图1所示,本实施例提供一种PID抗性高的PERC电池组件及其制备方法,包括衬底层1,衬底层1顶面从下到上依次设置有扩散层2、SiOx正钝化层3和SixNy正减反钝化保护膜层4,衬底层1底面从上到下依次设置有SiOx背钝化层6、AlOx背钝化膜层7和SixNy背减反钝化保护膜层8,SixNy正减反钝化保护膜层4的厚度为75-95nm,其折射率为2.08-2.13,SixNy背减反钝化保护膜层8的厚度为90-160nm,SixNy背减反钝化保护膜层8的膜层数量为至少2层,且距离衬底层1最近一层的折射率≥2.1,AlOx背钝化膜层7的厚度为2-28nm,AlOx背钝化膜层7的折射率为1.56-1.76。
本实施例中,通过优化SixNy正减反钝化保护膜层的厚度,确保对SiOx正钝化层的保护,同时优化AlOx背钝化膜层和SixNy背减反钝化保护膜层的厚度,提高折叠率,形成高致密膜层,同时SixNy背减反钝化保护膜层的膜层数量为至少2层,增强各层膜之间致密性和最终厚度,更好的保护AlOx背钝化膜层,增强AlOx背钝化膜层的稳定性,并优化各膜层组合排布及折射率,从而综合提高PERC电池组件的抗PID能力。
下表1为SixNy背减反钝化保护膜层厚度对PID影响的实验测试结果表:
表1
由上表1可知,SixNy背减反钝化保护膜层厚度为100nm时对PID抗性最好,因此作为本发明的一种优选技术方案:
SixNy背减反钝化保护膜层8的厚度为100nm。
下表2为SixNy背减反钝化保护膜层的膜层数量对PID影响的实验测试结果表:
表2
由上表2可知,随着SixNy背减反钝化保护膜层的膜层数量的增加,其PID抗性能力增强,但受其厚度限制,膜层数量不宜过多,因此作为本发明的一种优选技术方案:
SixNy背减反钝化保护膜层8的膜层数量为5层。
作为本发明的一种优选技术方案:
SixNy正减反钝化保护膜层4上表面设置有正电极5,SixNy背减反钝化保护膜层8下表面设置有背电场9,背电场9底部设置有背电极10,背电场9的厚度为5-30μm。
实施例2
如图1到2所示,本实施例提供一种PID抗性高的PERC电池组件的制备方法,包括以下步骤:
S1:根据管式PECVD工艺,在衬底层1顶面依次制备扩散层2和SiOx正钝化层3,在衬底层1底面制备SiOx背钝化层6;
S2:然后在SiOx背钝化层6底面通过ALD工艺沉积形成AlOx背钝化层7,沉积的圈数为24-36圈;
S3:然后在SiOx正钝化层3顶面镀膜形成SixNy正减反钝化保护膜层4,并进行退火,退火时间为17-44min,退火温度在380-480℃;
S4:然后在AlOx背钝化层7底面镀膜形成SixNy背减反钝化保护膜层8,并进行退火,退火时间为17-44min,退火温度在380-480℃。
进一步地,还包括以下步骤:
S01:在SixNy背减反钝化保护膜层8底面通过532nm-1064nm的激光进行局部开槽,局部开槽区域占比0.5%-6%;
S02:在SixNy背减反钝化保护膜层8底面通过丝网印刷得到背电场9;
S03:在对应局部开槽镂空区域,并在非背电场9区域进行丝网印刷银浆料并烘干,形成背电极10;
S04:在SixNy正减反钝化保护膜层4顶面进行丝网印刷正电极5并烘干烧结。
本实施例中,所述的PECVD工艺流程包括清洗制绒衬底层表面、扩散形成掺杂扩散层、刻蚀抛光、表面氧化、背面ALD钝化、PECVD镀膜并退火、激光刻槽、丝网印刷和烧结,而管式PECVD工艺区别于板式PECVD工艺,镀膜过程中,硅片竖直插入石墨舟中吸附,由SiC桨送入石英炉管内作为一电极端进行镀膜,因此称为管式PECVD。本发明制备方法通过优化AlOx背钝化膜层沉积圈数,可提高PERC电池PID抗性,同时严格控制镀膜顺序,依次按照AlOx背钝化膜层、SixNy正减反钝化保护膜层和SixNy背减反钝化保护膜层的顺序镀膜,增加了SixNy背减反钝化保护膜层的致密性,并严格控制退火时间和温度,综合提高PERC电池的抗PID能力。
图2为AlOx背钝化膜层沉积圈数对PID的影响效果图,从图2可看出,取六组PERC电池,其AlOx背钝化膜沉积圈数分别为24、26、28、30、32和36圈,并分别测试对PID的影响,测试条件为:在温度85℃、湿度85%以及-1000V的条件下持续96h,结合现行控制的圈数,以及可靠性结果,AlOx背钝化膜的圈数为26时的抗PID效果最好,作为本发明的一种优选技术方案:
在步骤S2中,AlOx背钝化层7沉积的圈数为26圈。
下表3为退火时间对PID影响的实验测试结果表:
表3
由上表3可以得出,随着退火时间的延长,电池PID性能得以提升,氧浓度N2:02为(500-1500):2000,退火降温回压N2:02为2000:2000,氧浓度比例提高,反应更加致密,对PID抗性更佳。
以上所述,仅为本发明的较佳实施例,并不用以限制本发明,本发明的专利保护范围以权利要求书为准,凡是运用本发明的说明书及附图内容所作的等同结构变化,同理均应包含在本发明的保护范围内。
Claims (7)
1.一种PID抗性高的PERC电池组件,包括衬底层(1),其特征在于,衬底层(1)顶面从下到上依次设置有扩散层(2)、SiOx正钝化层(3)和SixNy正减反钝化保护膜层(4),衬底层(1)底面从上到下依次设置有SiOx背钝化层(6)、AlOx背钝化膜层(7)和SixNy背减反钝化保护膜层(8),SixNy正减反钝化保护膜层(4)的厚度为75-95nm,其折射率为2.08-2.13,SixNy背减反钝化保护膜层(8)的厚度为90-160nm,SixNy背减反钝化保护膜层(8)的膜层数量为至少2层,且距离衬底层(1)最近一层的折射率≥2.1,AIOx背钝化膜层(7)的厚度为2-28nm,AIOx背钝化膜层(7)的折射率为1.56-1.76。
2.根据权利要求1所述的一种PID抗性高的PERC电池组件,其特征在于,SixNy背减反钝化保护膜层(8)的厚度为100nm。
3.根据权利要求1所述的一种PID抗性高的PERC电池组件,其特征在于,SixNy背减反钝化保护膜层(8)的膜层数量为5层。
4.根据权利要求1至3中任一权利要求所述的一种PID抗性高的PERC电池组件,其特征在于,SixNy正减反钝化保护膜层(4)上表面设置有正电极(5),SixNy背减反钝化保护膜层(8)下表面设置有背电场(9),背电场(9)底部设置有背电极(10)。
5.根据权利要求4所述的一种PID抗性高的PERC电池组件,其特征在于,背电场(9)的厚度为5-30μm。
6.根据权利要求5所述的一种PID抗性高的PERC电池组件的制备方法,其特征在于,包括以下步骤:
S1:根据管式PECVD工艺,在衬底层(1)顶面依次制备扩散层(2)和SiOx正钝化层(3),在衬底层(1)底面制备SiOx背钝化层(6);
S2:然后在SiOx背钝化层(6)底面通过ALD工艺沉积形成AlOx背钝化膜层(7),沉积的圈数为24-36圈;
S3:然后在SiOx正钝化层(3)顶面镀膜形成SixNy正减反钝化保护膜层(4),并进行退火,退火时间为17-44min,退火温度在380-480℃;
S4:然后在AIOx背钝化膜层(7)底面镀膜形成SixNy背减反钝化保护膜层(8),并进行退火,退火时间为17-44min,退火温度在380-480℃。
7.根据权利要求6所述的一种PID抗性高的PERC电池组件的制备方法,其特征在于,还包括以下步骤:
S01:在SixNy背减反钝化保护膜层(8)底面通过532nm-1064nm的激光进行局部开槽,局部开槽区域占比0.5%-6%;
S02:在SixNy背减反钝化保护膜层(8)底面通过丝网印刷得到背电场(9);
S03:在对应局部开槽镂空区域,并在非背电场(9)区域进行丝网印刷银浆料并烘干,形成背电极(10);
S04:在SixNy正减反钝化保护膜层(4)顶面进行丝网印刷正电极(5)并烘干烧结。
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