CN110491846B - Chip adopting micro-thermal generator - Google Patents
Chip adopting micro-thermal generator Download PDFInfo
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- CN110491846B CN110491846B CN201910638453.XA CN201910638453A CN110491846B CN 110491846 B CN110491846 B CN 110491846B CN 201910638453 A CN201910638453 A CN 201910638453A CN 110491846 B CN110491846 B CN 110491846B
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- type semiconductor
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- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000011888 foil Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910021392 nanocarbon Inorganic materials 0.000 claims abstract description 11
- 230000017525 heat dissipation Effects 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 238000011084 recovery Methods 0.000 abstract description 4
- 238000012544 monitoring process Methods 0.000 description 5
- 238000010248 power generation Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a chip adopting a micro-heating point generator, which comprises at least three operation chips, N-type semiconductor films, P-type semiconductor films, nano-carbon heat dissipation films and conductive metal foils, wherein at least one N-type semiconductor film and at least one P-type semiconductor film are respectively arranged between two adjacent layers of operation chips, and one N-type semiconductor film and one P-type semiconductor film which are positioned in the same plane are mutually and electrically connected through one conductive metal foil; the nano-carbon heat dissipation is respectively coated on the upper end surface of the operation chip positioned at the top and the lower end surface of the operation chip positioned at the bottom in each operation chip. The invention can effectively realize the integral cooling capacity of the chip during operation, is beneficial to improving the cooling performance of the chip during operation, is convenient to accurately and conveniently monitor the operation temperature of the chip and simultaneously improves the comprehensive energy recovery and utilization rate of the chip during operation.
Description
Technical Field
The invention relates to a smoke detection device, in particular to a chip adopting a micro-thermal generator.
Background
At present, along with the reduction of the sizes of a circuit system and a chip structure, especially the development of a 3D IC technology, the current chip structure is smaller and smaller, the chip power density is larger and larger, although the circuit structure is effectively simplified, the heat productivity of the chip during operation is relatively higher, so that the circuit equipment is easy to break down due to high temperature, and the stability and the reliability of the operation of electrical equipment are seriously influenced, aiming at the problem, the operation efficiency of the chip circuit is seriously influenced on one hand, and on the other hand, the current chip circuit needs to be provided with a heat radiation system with a complex structure, so that the circuit equipment structure is complex, to solve this problem, although a chip structure for reducing the temperature by adding a thermoelectric generation mechanism in the chip structure is also developed, for example, the patent of ' 2016205099272 patent of ' 3D chip using micro thermoelectric generator ' can realize that the chip itself directly converts the heat energy into the electric energy to reduce the operating temperature of the chip, but the thermoelectric generation system structure and the chip arrangement structure adopted in the patent are relatively complex, and the heat exchange efficiency is relatively poor, and meanwhile, the electric energy obtained by thermoelectric generation during the operation of the chip lacks effective management, thus causing great inconvenience for the actual use.
Therefore, in view of the current situation, it is urgently needed to develop a new chip structure to meet the requirement of practical use.
Disclosure of Invention
Compared with the traditional chip equipment, the chip adopting the micro-thermal generator can effectively realize the integral cooling capacity during the operation of the chip, is beneficial to improving the cooling performance during the operation of the chip, prevents the chip from faults caused by high-temperature heat while improving the integral operation performance of the chip, effectively improves the convenience of chip operation supervision operation, is convenient for accurately and conveniently monitoring the operation temperature of the chip, and simultaneously improves the comprehensive energy recovery utilization rate during the operation of the chip.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a chip using micro-heating point generator comprises an operation chip, an N-type semiconductor film, a P-type semiconductor film, a nano-carbon heat dissipation film, a conductive metal foil and a packaging shell, wherein, at least three operation chips are coaxially distributed and uniformly distributed from top to bottom, at least one N-type semiconductor film and at least one P-type semiconductor film are respectively arranged between two adjacent operation chips, the N-type semiconductor film and the P-type semiconductor film are respectively propped against the upper end surface and the lower end surface of the two adjacent operation chips, the N-type semiconductor films and the P-type semiconductor films are distributed at intervals, and one N-type semiconductor film and one P-type semiconductor film which are positioned in the same plane are electrically connected with each other through a conductive metal foil, and a temperature difference power generation group is formed, and the temperature difference power generation groups are connected in series and parallel with each other through conductive metal foils; the packaging shell is of a sealed cavity structure and is respectively coated outside each operation chip, the N-type semiconductor film, the P-type semiconductor film, the nano-carbon heat dissipation film and the conductive metal foil.
Furthermore, a plurality of pins are uniformly distributed on the outer surface of the packaging shell, the operation chip is electrically connected with the pins respectively, and at least one pin in the pins is electrically connected with each thermoelectric generation set through a conductive metal foil.
Furthermore, in the thermoelectric generation set, the thermoelectric generation sets positioned in the same plane are connected in series through the conductive metal foil to form a working set, and the working sets positioned in different planes are connected in parallel through the conductive metal foil and are electrically connected with the pins through the conductive metal foil.
Furthermore, the area of the contact surface between the operating chip and the N-type semiconductor film and the P-type semiconductor film is 50% -80% of the area of the connecting contact surface between the operating chip and the N-type semiconductor film and the P-type semiconductor film.
Compared with the traditional chip equipment, the invention can effectively realize the integral cooling capacity of the chip during the operation, is beneficial to improving the cooling performance of the chip during the operation, prevents the chip from faults and the like caused by high temperature and high temperature while improving the integral operation performance of the chip, effectively improves the convenience of the chip operation supervision operation, is convenient for accurately and conveniently monitoring the operation temperature of the chip, and simultaneously improves the comprehensive energy recovery utilization rate during the operation of the chip.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic view of the structure of the present invention.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
The chip adopting the micro-hotspot generator shown in fig. 1 comprises at least three operation chips 1, N-type semiconductor films 2, P-type semiconductor films 3, nanocarbon heat dissipation films 4, conductive metal foils 5 and a packaging shell 6, wherein the operation chips 1 are coaxially distributed and uniformly distributed from top to bottom, at least one N-type semiconductor film 2 and at least one P-type semiconductor film 3 are respectively arranged between two adjacent operation chips 1, the N-type semiconductor film 2 and the P-type semiconductor film 3 are respectively abutted against the upper end surfaces and the lower end surfaces of the two adjacent operation chips 1, the N-type semiconductor films 2 and the P-type semiconductor films 3 are mutually distributed at intervals, and one N-type semiconductor film 2 and one P-type semiconductor film 3 in the same plane are mutually and electrically connected through one conductive metal foil 5, and a temperature difference power generation group is formed, and the temperature difference power generation groups are connected in series and parallel with each other through a conductive metal foil 1; the two nano-carbon heat dissipation films 4 are respectively coated on the upper end face of the operation chip 1 positioned at the top and the lower end face of the operation chip 1 positioned at the bottom in each operation chip 1, and the packaging shell 6 is of a closed cavity structure and is respectively coated outside each operation chip 1, the N-type semiconductor film 2, the P-type semiconductor film 3, the nano-carbon heat dissipation films 4 and the conductive metal foil 5.
The outer surface of the packaging shell 6 is uniformly provided with a plurality of pins 7, the operation chip 1 is electrically connected with the pins 7, and at least one pin 7 of the pins 7 is electrically connected with each thermoelectric generation set through the conductive metal foil 5.
In addition, in the thermoelectric generation sets, all the thermoelectric generation sets in the same plane are connected in series through the conductive metal foil 5 to form a working set, and all the working sets in different planes are connected in parallel through the conductive metal foil 5 and are electrically connected with the pins 7 through the conductive metal foil 5.
Meanwhile, the area of the contact surface between the operating chip and the N-type semiconductor film 2 and the P-type semiconductor film 3 is 50% -80% of the area of the connecting contact surface between the operating chip and the N-type semiconductor film 2 and the P-type semiconductor film 3.
Specifically, the conductive metal foil 5 is located outside the side surface of the operation chip 1 and embedded in the inner surface of the package 6.
In the specific implementation of the invention, the operation chip, the N-type semiconductor film, the P-type semiconductor film, the nano-carbon heat dissipation film, the conductive metal foil and the packaging shell which form the invention are firstly assembled, and then the assembled invention is connected with an external circuit board and a circuit system of the circuit board through pins of the packaging shell, thereby completing the assembly of the invention.
When the pins are connected with an external circuit board and a circuit system of the circuit board, the pins connected with the operation chip are directly electrically connected with an operation circuit system of the circuit board, and the pins connected with the temperature difference generating set formed by the N-type semiconductor film and the P-type semiconductor film are simultaneously and electrically connected with any one or two of a power supply circuit and a temperature monitoring circuit of the circuit system.
When the invention is operated, each operation chip can generate a large amount of waste heat during operation, and one part of the generated heat is radiated and cooled by the nano-carbon radiating film positioned on the outer surface of the operation chip positioned at two ends, and the other part of the generated heat is gathered at each operation chip positioned at the middle position and has higher temperature closer to the center position, so that each operation chip has larger temperature difference during operation, under the condition of the temperature difference, direct current is generated between the N-type semiconductor film and the P-type semiconductor film positioned between two adjacent operation chips, and the current is transmitted to a power circuit and a temperature monitoring circuit of a circuit system through pins by the conductive metal foil pieces, thereby achieving the purpose of cooling the chips on one hand by converting heat energy into electric energy, and on the other hand, directly obtaining the accurate temperature of the current chip during operation through the size of the generated electric energy, the chip is convenient to protect, chip faults caused by overhigh temperature are prevented from occurring, in addition, electric energy generated by the chip can be recovered and used as operation electric energy of other electrical equipment, and therefore the purposes of improving the comprehensive utilization rate of resources and reducing the operation energy consumption of the equipment are achieved.
Compared with the traditional chip equipment, the invention can effectively realize the integral cooling capacity of the chip during the operation, is beneficial to improving the cooling performance of the chip during the operation, prevents the chip from faults and the like caused by high temperature and high temperature while improving the integral operation performance of the chip, effectively improves the convenience of the chip operation supervision operation, is convenient for accurately and conveniently monitoring the operation temperature of the chip, and simultaneously improves the comprehensive energy recovery utilization rate during the operation of the chip.
It will be appreciated by persons skilled in the art that the present invention is not limited by the embodiments described above. The foregoing embodiments and description have been presented only to illustrate the principles of the invention. Various changes and modifications can be made without departing from the spirit and scope of the invention. Such variations and modifications are intended to be within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (1)
1. A chip adopting a micro-heating point motor is characterized in that: the chip adopting the micro-thermal generator comprises an operation chip, an N-type semiconductor film, a P-type semiconductor film, a nano-carbon heat dissipation film, a conductive metal foil and a packaging shell, wherein the number of the operation chips is at least three, the operation chips are coaxially distributed and uniformly distributed from top to bottom, at least one N-type semiconductor film and at least one P-type semiconductor film are respectively arranged between two adjacent layers of the operation chips, the N-type semiconductor film and the P-type semiconductor film are respectively abutted against the upper end surface and the lower end surface of the two adjacent operation chips, the N-type semiconductor films and the P-type semiconductor films are distributed at intervals, and one N-type semiconductor film and one P-type semiconductor film which are positioned in the same plane are electrically connected with each other through a conductive metal foil, forming a thermoelectric generation group, wherein the thermoelectric generation groups are connected in series and parallel through conductive metal foils; the device comprises a plurality of working chips, a plurality of thermoelectric generation groups and a plurality of nano-carbon radiating films, wherein the working chips are arranged on the same plane, the thermoelectric generation groups are electrically connected with each other through conductive metal foils, the working groups on different planes are connected in parallel through the conductive metal foils and are electrically connected with the pins through the conductive metal foils, the area of the contact surface between the operating chip and the N-type semiconductor film and the P-type semiconductor film is 50% -80% of the area of the connecting contact surface between the operating chip and the N-type semiconductor film and the P-type semiconductor film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910638453.XA CN110491846B (en) | 2019-07-16 | 2019-07-16 | Chip adopting micro-thermal generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910638453.XA CN110491846B (en) | 2019-07-16 | 2019-07-16 | Chip adopting micro-thermal generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110491846A CN110491846A (en) | 2019-11-22 |
| CN110491846B true CN110491846B (en) | 2021-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910638453.XA Active CN110491846B (en) | 2019-07-16 | 2019-07-16 | Chip adopting micro-thermal generator |
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Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM483543U (en) * | 2013-12-11 | 2014-08-01 | Tcy Tec Corp | Heat transfer catalysis and heat dissipation structure |
| US9356009B2 (en) * | 2014-05-27 | 2016-05-31 | Micron Technology, Inc. | Interconnect structure with redundant electrical connectors and associated systems and methods |
| CN105870083B (en) * | 2016-05-31 | 2019-01-18 | 福州大学 | Using the 3D chip and its implementation of low-grade fever electric generator |
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| CN110491846A (en) | 2019-11-22 |
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Effective date of registration: 20201224 Address after: No. 201, building 5, Tian'an headquarters center, 555 Panyu Avenue North, Donghuan street, Panyu District, Guangzhou, Guangdong 510000 Applicant after: Guangdong Evan Low Carbon Technology Co.,Ltd. Applicant after: Guangzhou Evan new energy Co.,Ltd. Address before: No. 201, building 5, Tian'an headquarters center, 555 Panyu Avenue North, Donghuan street, Panyu District, Guangzhou, Guangdong 510000 Applicant before: Guangdong Evan Low Carbon Technology Co.,Ltd. |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
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Denomination of invention: A Chip Using Micro thermal Generator Effective date of registration: 20221220 Granted publication date: 20210115 Pledgee: Agricultural Bank of China Limited Guangzhou Sanyuanli Sub-branch Pledgor: Guangdong Evan Low Carbon Technology Co.,Ltd. Registration number: Y2022980028105 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20210115 Pledgee: Agricultural Bank of China Limited Guangzhou Sanyuanli Sub-branch Pledgor: Guangdong Evan Low Carbon Technology Co.,Ltd. Registration number: Y2022980028105 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A chip using a micro thermal generator Granted publication date: 20210115 Pledgee: Agricultural Bank of China Limited Guangzhou Sanyuanli Sub-branch Pledgor: Guangdong Evan Low Carbon Technology Co.,Ltd. Registration number: Y2024980003780 |