CN110476486B - 信息处理装置 - Google Patents

信息处理装置 Download PDF

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Publication number
CN110476486B
CN110476486B CN201780089361.XA CN201780089361A CN110476486B CN 110476486 B CN110476486 B CN 110476486B CN 201780089361 A CN201780089361 A CN 201780089361A CN 110476486 B CN110476486 B CN 110476486B
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Prior art keywords
value
plasma
change value
information processing
power supply
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CN201780089361.XA
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Chinese (zh)
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CN110476486A (zh
Inventor
神藤高广
泷川慎二
丹羽阳大
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Fuji Corp
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Fuji Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
CN201780089361.XA 2017-04-04 2017-04-04 信息处理装置 Active CN110476486B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/014088 WO2018185833A1 (ja) 2017-04-04 2017-04-04 情報処理装置

Publications (2)

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CN110476486A CN110476486A (zh) 2019-11-19
CN110476486B true CN110476486B (zh) 2022-03-08

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ID=63713360

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CN201780089361.XA Active CN110476486B (zh) 2017-04-04 2017-04-04 信息处理装置

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JP (1) JP6806883B2 (ja)
CN (1) CN110476486B (ja)
WO (1) WO2018185833A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7067516B2 (ja) * 2019-03-26 2022-05-16 日本電産株式会社 プラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6375860B1 (en) * 1995-03-10 2002-04-23 General Atomics Controlled potential plasma source
JP2000173982A (ja) * 1998-12-01 2000-06-23 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
JP2002313729A (ja) * 2001-04-10 2002-10-25 Matsushita Electric Ind Co Ltd プラズマ処理装置の監視方法、プラズマ処理方法及び装置
JP3977114B2 (ja) * 2002-03-25 2007-09-19 株式会社ルネサステクノロジ プラズマ処理装置
JP2004128023A (ja) * 2002-09-30 2004-04-22 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
CN101206232A (zh) * 2007-07-31 2008-06-25 烟台龙源电力技术有限公司 等离子体发生器阴极寿命监测方法和装置
JP5261339B2 (ja) * 2009-09-30 2013-08-14 株式会社ダイヘン インピーダンス整合装置
CN102448239B (zh) * 2012-01-10 2013-06-05 中国科学院西安光学精密机械研究所 介质阻挡放电增强型低温等离子体电刷发生装置

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CN110476486A (zh) 2019-11-19
JP6806883B2 (ja) 2021-01-06
WO2018185833A1 (ja) 2018-10-11
JPWO2018185833A1 (ja) 2019-12-12

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