559974 A7 B7 五、發明説明（1 ) 【發明領域】 (請先閲讀背面之注意事項再填寫本頁) 本發明是關於半導體製造裝置的監視方法及其控制方 法，更詳細爲關於在被處理體製造半導體元件時用以製造 能達到預定的規格的半導體元件而可監視、控制半導體製 造裝置的半導體製造裝置的監視方法及其控制方法。 【發明背景】 【習知技藝之說明】 在半導體製程中使用種種的半導體製造裝置。在半導 體晶圓（以下稱爲〔晶圓〕）或玻璃基板等的被處理體的 成膜製程或鈾刻製程，電漿處理裝置等的半導體製造裝置 廣泛地被使用。例如當對晶圓實施預定的電漿處理製造能 達到預定的規格的半導體元件（以下稱爲〔裝置〕（Device ))時，在選擇對製造此裝置最佳裝置參數（高頻功率、 處理室內的氣體壓力、氣體流量、晶座（559974 A7 B7 V. Description of the invention (1) [Field of the invention] (Please read the precautions on the back before filling out this page) The present invention relates to a monitoring method of a semiconductor manufacturing device and a control method thereof. A monitoring method of a semiconductor manufacturing apparatus and a control method thereof for manufacturing a semiconductor element capable of reaching a predetermined specification and capable of monitoring and controlling the semiconductor manufacturing apparatus when manufacturing a semiconductor element. [Background of the Invention] [Explanation of the Know-how] Various semiconductor manufacturing devices are used in the semiconductor manufacturing process. Semiconductor manufacturing devices such as semiconductor wafers (hereinafter referred to as "wafers"), glass substrates, and other substrate manufacturing processes, such as plasma processing equipment, are widely used. For example, when a predetermined plasma processing is performed on a wafer to manufacture a semiconductor device capable of meeting a predetermined specification (hereinafter referred to as [Device]), the optimal device parameters (high-frequency power, processing room) for manufacturing the device are selected. Gas pressure, gas flow, crystal base (
Susceptor)溫度 經濟部智慧財產局員工消費合作社印製 等的在處理晶圓時直接設定於裝置的數値資料）後，將這 些裝置參數設定於半導體製造裝置。而且，在設定這些裝 置參數後進行半導體製造裝置的運轉。在運轉中使用監視 裝置參數的參數感測器（Sensor )，檢測各個實際的値，並 且藉由各個追加感測器檢測影響晶圓處理的高頻電源的高 諧波、相位、阻抗等的電氣訊號或電漿發光強度等的運轉 資料，根據這些檢測資料監視、控制半導體製造裝置。此 時，藉由多變量解析等的統計的處理解析來自複數個參數 感測器以及追加感測器的檢測資料，求出各檢測資料間的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）' -4- 559974 A7 B7 五、發明説明（2 ) 相關關係，根據此相關關係預測晶圓的處理結果，或監視 、控制半導體製造裝置，進而檢測裝置的異常或晶圓的異 常，依照需要使裝置停止。此外，在本說明書中參數感測 器是指檢測、監視複數個裝置參數的實測値的感測器而言 ，追加感測器是指檢測、監視在裝置參數以外影響晶圓的 處理狀態的因子，例如高頻電源的高諧波、相位、阻抗等 的電氣訊號或電漿發光強度、排出氣體的氣體成分等的感 測器。 例如在日本特開平1 〇 - 1 2 5 6 6 0號公報提出利 用藉由使反映電漿狀態的電氣訊號與電漿處理特性有相關 的多變量解析的模式（Model )，將處理時的電氣訊號値應 用於模式以預測電漿特性的技術。而且，在日本特開平 1 0 - 1 3 5 0 9 1號公報提出在製程加工製程中，利用 對良率資訊或電氣特性資訊等的製品的品質結果資訊與製 造裝置履歷資訊等的在線（In-line )測定資訊等的製品的品 質給予影響的資訊，利用多段多變量解析手段解析與對這 些製品的品質結果資訊與製品的品質給予影響的資訊的因 果關係的技術。其他，在日本特開平1 1 一 8 7 3 2 3號 公報提出分析複數個製程參數，統計地使這些參數相關， 以此相關關係爲基礎檢測製程特性的變化，以防止因單一 資料的雜訊造成的不良影響的技術。 【發明槪要】 但是，在設定裝置參數後，爲了利用參數感測器或追 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閲讀背面之注意事項再填寫本頁)(Susceptor) Temperature After printing by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives, etc., the data is set directly on the device when processing wafers), and these device parameters are set in the semiconductor manufacturing device. After setting these device parameters, the semiconductor manufacturing device is operated. During operation, a parameter sensor (Sensor) that monitors the parameters of the device is used to detect each actual radon, and each additional sensor is used to detect the electrical components such as high harmonics, phase, and impedance of high-frequency power sources that affect wafer processing. Operating data such as signals and plasma luminous intensity are used to monitor and control semiconductor manufacturing equipment based on these detection data. At this time, through statistical processing such as multivariate analysis, the detection data from the plurality of parameter sensors and additional sensors are analyzed, and the paper size between the detection data is determined to apply the Chinese National Standard (CNS) A4 standard ( 210X297 mm) '-4- 559974 A7 B7 V. Description of the invention (2) Correlation relationship, based on this correlation relationship to predict the processing result of the wafer, or monitor and control the semiconductor manufacturing equipment, and then detect the abnormality of the device or wafer , Stop the device as needed. In addition, in this specification, a parameter sensor refers to a sensor that detects and monitors a plurality of device parameters, and an additional sensor refers to a factor that detects and monitors the processing status of a wafer outside the device parameters. , Such as high-frequency power supply high-harmonic, phase, impedance and other electrical signals or plasma luminous intensity, the gas component of the exhaust gas and other sensors. For example, in Japanese Patent Application Laid-Open No. 10-125 5660, it is proposed to use a multi-variable analysis model (Model) in which electrical signals reflecting the state of the plasma and the characteristics of the plasma processing are related to each other. Signal: A technique applied to patterns to predict plasma characteristics. Furthermore, Japanese Unexamined Patent Publication No. 10-1 3 5 0 9 1 proposes to use online (In) of quality result information and manufacturing equipment history information of products such as yield information or electrical characteristic information in the manufacturing process. -line) A technique for measuring information that affects the quality of products such as information and analyzing the causal relationship with the information that affects the quality result information of these products and the quality of products using multi-stage multivariate analysis methods. In addition, in Japanese Unexamined Patent Publication No. 1 1-8 7 3 2 3, it is proposed to analyze a plurality of process parameters, statistically correlate these parameters, and detect changes in process characteristics based on the correlation to prevent noise due to a single data. Causes adverse effects on the technology. [Explanation of invention] However, after setting the device parameters, in order to use the parameter sensor or the paper size to apply the Chinese National Standard (CNS) A4 specification (210 × 297 mm) (Please read the precautions on the back before filling out this page )
、1T 争 經濟部智慧財產局員工消費合作社印製 -5- 559974 A7 B7 五、發明説明（3 ) 加感測器監視、控制晶圓的處理狀況，操作者根據過去的 儲存處理資料，憑經驗與直覺設定這些感測器的檢測値的 容許範圍時，因設定於比假想上下限値的容許界限還靠安 全側，故裝置的控制領域狹窄運轉常受限制，而且，有儘 管本來爲可製造依照規格的良品裝置的控制領域，但是將 上下限値設定於安全側，有感測器的檢測値容易超過設定 範圍、運轉時間變短、運轉率降低的課題。 而且，在使用上述各公報所揭示的多變量解析手法的 情形下，使經由例如複數個感測器而獲得的複數個檢測資 料與處理結果相關進行多變量解析處理而獲得模式後，將 各檢測資料應用到此模式以預測電漿處理特性，根據此預 測値判斷電漿的狀態的正常、異常，或預測晶圓的處理結 果，但因模式的作成所使用的複數個檢測資料是否爲製造 能達到期待規格的構造的正常的裝置（良品裝置）的情形 被檢測的正常的檢測資料的判斷不被進行，故即使可由在 實際製程中的複數個檢測資料預測電漿狀態，但該預測値 是否爲能達到製造良品裝置的條件的預測値則未必明確， 有晶圓的處理結果未必可正確地預測的課題。 本發明爲解決上述問題所進行的創作，其目的爲提供 對裝置的運轉具有寬度可提高運轉率，並且可高感度地判 斷對被處理體的處理的正常、異常，而且，即使被處理體 的處理有異常的情形也能簡單且確實地補正到正常的狀態 的半導體製造裝置的監視方法及其控制方法。 本發明的申請專利範圍第1項所述之半導體製造裝置 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） (請先閲讀背面之注意事項再填寫本頁)Printed by 1T Consumer Intellectual Property Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs -5- 559974 A7 B7 V. Description of the invention (3) Monitor and control the processing status of the wafer by adding sensors, the operator should store and process the data based on past experience. When setting the allowable range of the detection chirp of these sensors with intuition, it is set to be on the safer side than the allowable upper and lower limits. Therefore, the control range of the device is often restricted and the operation is limited. The control field of a good product device according to the specifications, but setting the upper and lower limits 値 on the safety side, there are problems that the detection 値 of the sensor easily exceeds the set range, the operating time becomes shorter, and the operating rate decreases. In the case of using the multivariate analysis method disclosed in each of the above publications, for example, a plurality of detection data obtained through a plurality of sensors are correlated with a processing result to perform a multivariate analysis process to obtain a pattern, and then each detection is performed. Data is applied to this model to predict the plasma processing characteristics. Based on this prediction, the normal or abnormal state of the plasma state is judged, or the wafer processing results are predicted, but whether the multiple test data used for the model creation are manufacturing capabilities A normal device (good product) with a structure that meets the expected specifications is not judged. Therefore, even if the state of the plasma can be predicted from a plurality of test data in the actual process, is the prediction In order to meet the requirements for manufacturing a good-quality device, the prediction is not necessarily clear, and there is a problem that the processing result of the wafer may not be accurately predicted. The present invention has been made to solve the above-mentioned problems, and its purpose is to provide a device with a wide width to improve the operation rate, and to judge with high sensitivity the normality and abnormality of the treatment of the object to be processed. A monitoring method of a semiconductor manufacturing apparatus and a control method of the semiconductor manufacturing apparatus that can be easily and reliably corrected to a normal state even when an abnormal situation is handled. The semiconductor manufacturing device described in item 1 of the scope of patent application of the present invention The paper size applies to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page)
-、1T 争. 經濟部智慧財產局8工消費合作社印製 -6- 559974 A7 B7 五、發明説明（4) 的監視方法是設定半導體製造裝置的複數個裝置參數於該 半導體製造裝置，在被處理體製造預定的半導體元件時， 根據預先作成的該半導體製造裝置的複數個感測器的檢測 資料的變動容許範圍群監視該半導體製造裝置，其特徵爲 作成該變動容許範圍群的製程包含： 根據該被處理體的規格與該半導體元件的期待規格與 該半導體製造裝置的特性，求出滿足該期待規格的該複數 個裝置參數的各個變動容許範圍的製程； 在該變動容許範圍內分別使該複數個裝置參數變化， 處理試用的被處理體的製程； 在處理該試用的被處理體時，由包含該半導體製造裝 置的至少一個的追加感測器的複數個感測器收集各個至少 一種類的檢測資料的製程；以及 作成來自僅由滿足該期待規格的檢測資料所構成的該 複數個感測器的檢測資料的變動容許範圍群的製程。 而且，本發明的申請專利範圍第2項所述之半導體製 造裝置的監視方法是在申請專利範圍第1項所述之發明中 ，其特徵爲分別比較來自以實際製程檢測的至少一個感測 器的複數個檢測資料與該變動容許範圍群所對應的容許檢 測資料。 而且，本發明的申請專利範圍第3項所述之半導體製 造裝置的監視方法是在申請專利範圍第1項或第2項所述 之發明中，其特徵爲在與由該複數個檢測資料的至少一個 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產笱員工消費合作社印製 559974 A7 B7 五、發明説明（5 ) 所對應的容許檢測資料不一致時通知異常。 (請先閲讀背面之注意事項再填寫本頁) 而且，本發明的申請專利範圍第4項所述之半導體製 造裝置的控制方法是設定半導體製造裝置的複數個裝置參 數於該半導體製造裝置，在被處理體製造預定的半導體元 件時，根據預先作成的該半導體製造裝置的至少一個感測 器的複數個檢測資料的變動容許範圍群控制該半導體製造 裝置，其特徵爲： 作成該變動容許範圍群的製程包含： 根據該被處理體的規格與該半導體元件的期待規格與 該半導體製造裝置的特性，求出滿足該期待規格的該複數 個裝置參數的各個變動容許範圍的製程； 在該變動容許範圍內分別使該複數個裝置參數變化， 處理試用的被處理體的製程； 在處理該試用的被處理體時，由包含該半導體製造裝 置的至少一個的追加感測器的複數個感測器收集各個至少 一種類的檢測資料的製程；以及 經濟部智慧財產局B(工消費合作社印製 作成來自僅由滿足該期待規格的檢測資料所構成的該 複數個感測器的檢測資料的變動容許範圍群的製程。 而且，本發明的申請專利範圍第5項所述之半導體製 造裝置的控制方法是在申請專利範圍第4項所述之發明中 ’其特徵爲分別比較來自以實際製程檢測的至少一個感測 器的複數個檢測資料與該變動容許範圍群所對應的容許檢 測資料。 而且，本發明的申請專利範圍第6項所述之半導體製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） "" -8- 559974 A7 B7 五、發明説明（6 ) (請先閲讀背面之注意事項再填寫本頁) 造裝置的控制方法是在申請專利範圍第4項或第5項所述 之發明中’其特徵爲在與由該複數個檢測資料的至少一個 所對應的容許檢測資料不一致時通知異常，並且停止製程 【圖式之簡單說明】 Η 1是顯示本發明方法所使用的半導體製造裝置的一 例之構成圖。 Η 2是槪念地顯示製程條件與檢測資料的對應關係的 說明圖。 【符號說明】 10: 電漿處理裝置 11: 處理室 12: 下部電極 13: 上部電極 1 4、1 5 : 高頻電源 經濟部智慧財產苟員工消費合作社印製 1 4 Β、1 5 Β : 電氣的測定値（參數感測器兼追 加感測器） 1 6 ： 氣體配管 16Α、16Β: 氣體配管 1 7 A > 1 7 Β ： 流量控制裝置 1 8 A、1 8 B、1 9 A : 流體感測器（參數感測 器） 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9 - 559974 A7 _B7 五、發明説明（7 ) 1 9 • 聚 隹 J \ NN 環 2 0 ： 溫 度 感 測 器 ( 參 數 感 測 器） 2 1 • 分光 鏡 ( 追加 感 測 器 ) 2 2 ： 控 制 裝 置 2 2 A 檢 測 資 料 儲 存 部 2 2 B 變 動 容 許 範 圍 群作成 部 2 2 C 變 動 容 許 範 圍 群 儲 存 部 2 2 D 比 較 Λ 判 定 部 2 2 E 中 央 控 制 部 2 3 I 輸 入 輸 出 裝 置 (請先閱讀背面之注意事項再填寫本頁) 【較佳實施例之詳細說明】 以下，根據圖1、圖2所示的實施形態說明本發明。 首先，說明作爲本發明所使用的半導體製造裝置的電 漿處理裝置。此電漿處理裝置1 0例如如圖1所示具備可 保持高真空的鋁製的處理室1 1 ，與配置於此處理室1 1 經濟部智慧財產苟：貝工消費合作社印製 內且兼具載置被處理體（例如晶圓）W的載置台的下部電 極1 2，與配置於此下部電極1 2的上方的上部電極1 3 ，如後述藉由在下部電極1 2與上部電極1 3間生成的製 程氣體的電漿，用以對下部電極1 2上的晶圓W實施蝕刻 而構成。 在上述下部電極1 2中介整合器1 4A連接有第一高 頻電源1 4，例如由第一高頻電源1 4施加2 Μ Η z的高 頻功率。在此下部電極12與整合器14Α間連接有電氣 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -10- 559974 A7 _ B7 五、發明説明（8 ) (請先閲讀背面之注意事項再填寫本頁) 測定器1 4 B，經由此電氣測定器1 4 B測定施加於下部 電極1 2的高頻電壓源1 4的基本頻率以及高諧波的電壓 、電流、相位、阻抗等的電氣訊號。而且，在上部電極 1 3中介整合器1 5A連接有第一高頻電源1 5，例如由 第一高頻電源1 5施加6 ΟΜΗ z的高頻功率。在此上部 電極1 3與整合器1 5 A間連接有電氣測定器1 5 B，經 由此電氣測定器1 5 B測定施加於上部電極1 3的高頻電 壓源1 5的基本頻率以及高諧波的電壓、電流、相位、阻 抗等的電氣訊號。 經濟部智慧財產苟B(工消費合作社印製 上述上部電極1 3例如形成中空狀，在其頂面經由氣 體配管1 6連接有製程氣體供給源（未圖示）。此製程氣 體供給源是用以供給例如C F系氣體等的蝕刻氣體與氬氣 等的載氣（Carrier gas)的兩種類的氣體而構成，各自的第 一、第二氣體配管1 6A、1 6B在氣體配管1 6合流， 蝕刻氣體、載氣的混合氣體當作製程氣體供給到上部電極 1 3。在此上部電極1 3的底面多數個孔（未圖示）遍及 全面均等地分散而形成，經由這些孔將製程氣體供給到處 理室1 1內。而且，在第一、第二氣體配管1 6A、 1 6 B分別配設有第一、第二流量控制裝置1 7 A、 1 7 B，經由這些流量控制裝置1 7 A、1 7 B個別地控 制蝕刻氣體、載氣的流量。再者，在第一、第二氣體配管 1 6 A、1 6 B分別配設有第一、第二氣體流量感測器 1 8 A、1 9 B，藉由這些氣體流量感測器1 8 A、 1 9 B檢測鈾刻氣體、載氣的流量。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 - 559974 A7 B7 經濟部智慧財產局8工消費合作社印製 五、發明説明（9 ) 在上述下部電極1 2頂面的外周緣部配設有聚焦環（ Focus ring ) 1 9，藉由此聚焦環1 9將在處理室1 1內生 成的電漿聚焦於晶圓W。在此聚焦環1 9的內側配設有靜 電吸盤（Chuck )(未圖示），藉由此靜電吸盤靜電吸附晶 圓W。而且，在下部電極1 2配設有溫度感測器2 0，藉 由此溫度感測器2 0檢測處理晶圓W時.的下部電極1 2的 溫度，進而晶圓W的溫度。 因此，由製程氣體供給源對處理室1 1內供給製程氣 體，在維持預定的高真空的狀態下對上下兩電極1 2、 1 3施加各自的高頻功率的話，由上部電極1 3的高頻功 率產生製程氣體的電漿P，並且由下部電極1 2的高頻功 率產生偏壓（Bias)電位，對晶圓W進行反應性離子蝕刻。 再者，在上述處理室1 1的側面形成有例如塡入石英 玻璃的窗1 1 A，在此窗1 1 A配置有構成終點檢測裝置 的電漿發光分光鏡（Spectroscope) 2 1。藉由此分光鏡 2 1分光特定波長，由此特定波長的強度變化檢測蝕刻的 終點。在處理室1 1配設有檢測內部壓力的壓力感測器（ 未圖示），藉由此壓力感測器檢測處理室1 1內的壓力。 而且，上述高頻電壓源1 4、1 5以及第一、第二流 量控制裝置1 7 A、1 7 B連接於控制裝置2 2，經由此 控制裝置2 2設定蝕刻的裝置參數。而且在控制裝置2 2 連接有電氣測定器1 4 B、1 5 B、氣體流量感測器 1 8 A、1 8 B、溫度感測器2 0以及電漿發光分光鏡 2 1等的感測器，經由這些感測器檢測鈾刻狀況。而且， (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -12- 559974 A7 _ B7 五、發明説明（1〇) 控制裝置2 2根據來自感測器的檢測値控制電漿處理裝置 (請先閱讀背面之注意事項再填寫本頁) 1 0，進行所希望的鈾刻。電氣測定器1 4 B、1 5 B、 氣體流量感測器1 8 A、1 8 B、溫度感測器2 0以及壓 力感測器等是作爲參數感測器而作用，電漿發光分光鏡 2 1作爲追加感測器而作用。而且，電氣測定器1 4 B、 1 5 B是作爲用以檢測高頻電壓源1 4、1 5的基本頻率 以及高諧波的電壓、電流、相位、阻抗等的電氣訊號的追 加感測器而作用。 而且，上述控制裝置2 2如圖1所示，具備令來自上 述參數感測器以及追加感測器的檢測値爲檢測資料而分別 儲存的檢測資料儲存部2 2 A，與根據由此檢測資料儲存 部2 2 A儲存的檢測資料作成變動容許範圍群的變動容許 範圍群作成部2 2 B，與儲存藉由此變動容許範圍群作成 部2 2 B作成的變動容許範圍群的變動容許範圍群儲存部 經濟部智慧財產局員工消費合作社印製 2 2 C，與比較變動容許範圍群與在實際製程時得到的檢 測資料的比較、判定部2 2 D，與控制這些元件的中央控 制部2 2 E。此變動容許範圍群如以下所說明的，在實施 實際製程前利用試用晶圓W作成。而且，在控制裝置2 2 連接有輸入輸出裝置2 3，藉由此輸入輸出裝置2 3，設 定裝置參數等，而且，將處理結果等輸出到輸入輸出裝置 2 3° 上述變動容許範圍群藉由整理進行滿足所希望的裝置 規格（期待構造）的蝕刻時的複數個感測器（參數感測器 以及追加感測器）的檢測資料的資料群而構成。此變動容 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 559974 A7 B7 五、發明説明（11 ) (請先閲讀背面之注意事項再填寫本頁) 許範圍群包含製造滿足期待構造的裝置時的各感測器的檢 測資料的最大値以及最小値。因此，可判斷複數個感測器 的所有檢測資料在各個最大値與最小値之間的檢測値時， 由正常的鈾刻滿足期待構造的半導體元件（以下僅稱爲〔 良品〕）被製造，可判斷若複數個感測器的所有檢測資料 之中的任一個脫離此範圍的話，由異常的蝕刻不滿足期待 構造的半導體元件（以下僅稱爲〔不良品〕）被製造。此 外，即使爲在此處被判斷爲不良品的裝置（Device )，也並 非意味著其全部爲不能用的裝置，附有不良品的階級，有 依照各個階級的用途。 其次，說明作成變動容許範圍群的方法。變動容許範 圍群如上述在實施實際製程前利用試用晶圓W作成。試用 晶圓W使用具有與實際製程同一材質以及構造的試用晶圓 W。當作成變動容許範圍群時，首先根據鈾刻製程前的晶 圓W的規格、鈾刻製程後的裝置的期待構造、期待構造的 容許範圍以及電漿處理裝置的特性庫（Library )，藉由與 習知同樣的手法求出被認爲最佳的複數個裝置參數。 經濟部智慧財產局員工消費合作社印製 試用晶圓W的規格例如有與底層材料有關的資訊（膜 種、膜厚、構造、製法等的資訊）與被蝕刻膜有關的資訊 (膜種、膜厚、構造、製法等的資訊）以及與光罩材料有 關的資訊（膜種、膜厚、光罩圖案等的資訊）。表示裝置 的期待構造的資訊例如由裝置的形狀面有圖案寬度、蝕刻 深度、錐角、溝壁內凹（Bowing )程度、光罩材料的蝕刻 量等的資訊，而且，由電氣的特性面有配線電阻、接觸電 ^紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -14 - 559974 A7 B7 五、發明説明（12) (請先閱讀背面之注意事項再填寫本頁) 阻、帶電量、遺漏電流（Leakage current)、絕緣破壞等的 資訊。期待構造的容許範圍意味著形狀面以及電氣的特性 面等的値由裝置規格多少偏移也能容許的範圍。而且，電 漿處理裝置的特性庫的資訊有關於例如電漿處理裝置的型 式、處理室、電極構造以及高頻電源等的資訊。最佳裝置 參數是根據這些資訊由習知實際的知識以及/或實驗等求 出。 上述最佳裝置參數是藉由容易影響電漿處理裝置10 的下部電極1 2的高頻功率、上部電極1 3的高頻功率、 兩電極1 2、1 3間的距離、下部電極1 2的溫度、處理 室1 1內的壓力、蝕刻氣體流量、載氣流量等的電漿狀態 的裝置參數構成。因此，處理條件可藉由經由輸入輸出裝 置2 3將這些裝置參數輸入到電漿處理裝置1 0而設定。 經濟部智慧財產局員工消費合作社印製 在求出最佳裝置參數後，利用習知公知的實驗計劃法 藉由實際利用試用晶圓W的蝕刻，求出以最佳裝置參數爲 中心滿足裝置的期待構造的複數個裝置參數的各個變動容 許範圍以及檢測資料的變動容許範圍群。藉由利用實驗計 劃法考慮裝置參數的主效果或交互作用，可有效地求出此 變動容許範圍。當利用試用晶圓W進行鈾刻時，根據實驗 計劃法在最大、最小以及最大最小之間使各裝置參數變化 ，以使各裝置參數變化時的電氣測定器1 4 B、1 5 B、 第一、第二氣體流量感測器1 8 A、1 8 B、溫度感測器 2 0以及電漿發光分光鏡2 1等的感測器的電氣訊號作爲 檢測資料訊號而檢測，在每一試用晶圓將這些檢測資料訊 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -15- 559974 A7 B7____ 五、發明説明（13) (請先閱讀背面之注意事項再填寫本頁) 號取入控制裝置2 2後，在檢測資料儲存部2 2 A儲存各 試用晶圓W的複數個檢測資料。此時，來自各試用晶圓W 的複數個參數感測器以及追加感測器的檢測資料分別被進 行演算處理，每一各個參數感測器以及追加感測器的平均 値被儲存。使各試用晶圓W與其檢測資料有相關而儲存。 而且，電漿處理裝置1 0因繼續使用有在聚焦環1 9等的 消耗品的消耗或在電漿副生成物的處理室1 1內部p沉積 ，使裝置特性經時地變化，故爲了觀看這些影響，對於安 裝某種程度消耗的消耗品的裝置，藉由求出同樣的檢測資 料，可作成精度更高的變動容許範圍群。 經濟部智慧財產局員工消費合作社印製 而且，在蝕刻所有的試用晶圓W後，使用各種檢查機 器檢查每次使各裝置參數變化而處理的試用晶圓W的形狀 或電氣特性，檢查所有的試用晶圓W的形狀或電氣特性是 否滿足各個裝置的期待構造。由於以最佳裝置參數爲中心 使複數個裝置參數變化蝕刻試用晶圓W，故在處理後的試 用晶圓W之中有由裝置的形狀面或電氣的特性面滿足裝置 的期待構造，也有不滿足的。圖2是槪念地顯示對所有的 試用晶圓W的裝置參數群P與對應這些裝置參數群p的參 數感測器以及追加感測器的檢測資料群D的關係，這些裝 置參數群P以及檢測資料群D包含對滿足期待構造的試用 晶圓W者以及對不滿足期待構造的試用晶圓w者的雙方。 在圖2分別以空白部分顯示對滿足期待構造的試用晶圓w 的容許裝置參數群P 1以及容許檢測資料群（變動容許範 圍群）D 1 ，分別以斜線部分顯示對不滿足期待構造的試 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -16 - 559974 A7 __B7_ 五、發明説明（14) (請先閱讀背面之注意事項再填寫本頁) 用晶圓W的裝置參數群P 2以及檢測資料群D 2。而且， 在獲得容許裝置參數群P 1後，更利用此容許裝置參數群 P 1內的容許裝置參數處理晶圓W，藉由獲得此時的容許 檢測資料，可使變動容許範圍群的檢測資料更充實。 經濟部智慧財產局員工消費合作社印製 而且，若由輸入輸出裝置2 3輸入特定滿足期待構造 的各個試用晶圓W的號碼等的話，在控制裝置2 2經由中 央控制部2 2 E由檢測資料儲存部2 2 A的檢測資料群D 僅抽出容許檢測資料群D 1取入到變動容許範圍群作成部 2 2 B內。在變動容許範圍群作成部2 2 B將例如容許檢 測資料群D 1分類成每複數個感測器後，以依大小順序由 最大値到最小値排列的表作爲變動容許範圍群作成各個感 測器的容許檢測資料後，經由中央控制部2 2 E將此變動 容許範圍群收藏儲存於變動容許範圍群儲存部2 2 C。而 且，比較、判定部2 2 D是在實際製程時發揮功能，經常 比較由各感測器輸入到晶圓W的鈾刻中的檢測資料與由變 動容許範圍群儲存部2 2 C取入的對應的容許檢測資料 D 1，若複數個檢測資料的任一個與該容許檢測資料d 1 不一致的話，輸出異常訊號通知蝕刻的異常，經由控制裝 置2 2使製程停止。例如在處理中因某些原因在高頻電源 1 4、1 5有異常的情形下，顯示電氣測定器1 4 B、 1 5 B的檢測資料與容許檢測資料D 1不一致的異常値， 可經由此檢測値瞬間地得知異常。再者，與各容許檢測資 料不同，也可藉由在最大値與最小値的範圍內以接近這些 値爲異常接近資料値而設定，以在任一個檢測資料到達異 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17- 559974 B7 五、發明説明（15) (請先閱讀背面之注意事項再填寫本頁) 常接近資料値時通知接近異常狀態。此外，在實際製程時 由輸入到控制裝置2 2內的檢測資料逐次求出每一晶圓W 的平均値，以比較平均値與變動容許範圍群的平均値的變 動容許範圍也可以。 但是，電漿處理裝置1 0因繼續使用有消耗品的消耗 或在電漿副生成物的處理室1 1內部的沉積，使裝置特性 經時地變化，故即使對電漿處理裝置1 〇設定最佳運轉參 數，各感測器的檢測資料分別經時地變化，對應最佳運轉 參數的檢測資料也變化。在本實施形態當以最佳運轉參數 蝕刻晶圓W時，經由來自各感測器的檢測資料與上述變動 容許範圍群經常監視，可得知經時的裝置特性的變化。 經濟部智慧財產局員工消費合作社印製 其次，說明本發明方法的一實施形態。經由輸入輸出 裝置2 3將複數個最佳裝置參數輸入到電漿處理裝置1 〇 後，若驅動電漿處理裝置1 0的話，將晶圓W載置於下部 電極1 2上，由製程氣體供給源經由第一、第二流量控制 裝置1 7 A、1 7 B供給蝕刻氣體、載氣的話，這些氣體 當作製程氣體由上部電極1 3流入到處理室1 1內。而且 ’若在上下兩電極1 2、1 3施加第一、第二高頻電源 14、1 5的話，在上下兩電極1 2、1 3間生成電漿P ，使晶圓W的蝕刻被進行。此時，藉由電氣測定器1 4 B 、1 5 B檢測高頻電源1 4、1 5的基本頻率以及高諧波 的電壓、電流、相位、阻抗等的電氣訊號，藉由第一、第 二氣體流量感測器1 8 A、1 8 B分別檢測蝕刻氣體、載 氣的流量，藉由溫度感測器2 0檢測下部電極1 2的溫度 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -18- 559974 A7 B7 五、發明説明（16) (請先閱讀背面之注意事項再填寫本頁) 。同樣地檢測處理室1 1內的氣體壓力或上部電極1 3的 溫度。這些參數感測器以及追加感測器的檢測資料若被輸 入到控制裝置2 2的話，藉由比較、判定部2 2 D監視各 檢測資料，經常比較各檢測資料與分別對應的變動容許範 圍群的容許檢測資料D 1 ，以判定各檢測資料是否在容許 範圍內。 到晶圓W的鈾刻終了爲止若各檢測資料（或平均値資 料）分別在容許範圍內的話，處理後的晶圓W可獲得滿足 期待構造的裝置（Device)。繼續晶圓W的處理，若各檢測 資料的任一個達到異常接近資料的話，比較、判定部 2 2 D判定其要旨輸出異常接近訊號，通知、警告接近異 常狀態。再者，繼續晶圓W的處理後，若各檢測資料脫離 容許範圍的話，比較、判定部2 2 D輸出異常訊號，通知 此時的裝置在不滿足期待構造的異常狀態。而且，在有異 常時藉由將異常資料輸出到輸入輸出裝置2 3 ，可確實地 查明異常原因，可確實地補正製程條件。 經濟部智慧財產局g(工消費合作社印製 如以上所說明的如果依照本實施形態，利用電漿處理 裝置1 0蝕刻試用晶圓W，判定處理後的試用晶圓W是否 滿足期待構造，作成僅由滿足期待構造時的複數個參數感 測器以及追加感測器的容許檢測資料D 1構成的變動容許 範圍群，因用以根據此變動容許範圍群監視、控制電漿處 理裝置1 0，將參數感測器以及追加感測器的變動容許範 圍擴張到最大限，使裝置的運轉具有寬度，可提高運轉率 ，並且可高感度且確實地監視、控制製程的正常、異常。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -19- 559974 A7 B7 五、發明説明（17) 而且，對於有製程異常的情形，可確實地究明有異常的檢 測資料，可確實地補正裝置參數。 (請先閲讀背面之注意事項再填寫本頁} 而且，如果依照本實施形態，因分別用以比較在實際 製程檢測的複數個檢測資料與變動容許範圍群的容許檢測 資料D 1 ，故可簡單地得知任何參數感測器的檢測資料有 異常否，可在短時間補正裝置參數，使製程條件回復到良 好的狀態。而且，藉由在變動容許範圍群內設定異常接近 資料値，因會通知任何檢測資料接近異常狀態，故可瞬間 地預測異常。再者，因用以在超過複數個參數感測器以及 追加感測器的檢測資料的至少一個所對應的容許檢測資料 的界限値時通知異常，並且停止製程，故在製程異常時電 漿處理裝置1 0確實地停止，可確實地防止之後的不良裝 置（Device)的製造。 此外，在上述實施形態雖然利用數種參數感測器以及 追加感測器以獲得檢測資料，但是本發明並非被限制於這 些感測器，當然也能使用檢測電漿狀態的其他感測器（檢 測電漿密度或電漿溫度的感測器）、殘留氣體分析器（ 經濟部智慧財產局：貝工消費合作社印製 R G A )、電漿中浮游粒子檢測器、I R — L A S等的電 漿中的原子團（Radical )種或密度的測定器、對製程容器 的沉積膜厚或膜種的測定器、晶圓表面溫度、製程容器溫 度、電極表面等的溫度測定器。而且，在上述實施形態雖 然電漿處理裝置1 0自身用以通知製程異常，惟也可由電 漿處理裝置1 0通知上層的電腦異常，經由上層電腦通知 操作者異常。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20- 559974 A7 B7 五、發明説明（18) 【發明的功效】 如果依照本發明的申請專利範圍第1項〜第1 6項所 述之發明，可提供使裝置的運轉具有寬度可提高運轉率’ 並且可高感度地判斷對被處理體的處理的正常、異常，而 且，即使被處理體的處理有異常的情形也能簡單且確實地 補正到正常的狀態的半導體製造裝置的監視方法及其控制 方法。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產苟員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -21 --、 1T contention. Printed by Intellectual Property Bureau of the Ministry of Economic Affairs and printed by 8th Industrial Cooperative. -6-559974 A7 B7 V. Description of the invention (4) The monitoring method is to set a plurality of device parameters of a semiconductor manufacturing device to the semiconductor manufacturing device. When the processing body manufactures a predetermined semiconductor element, the semiconductor manufacturing device is monitored based on a variation allowable range group of detection data of a plurality of sensors of the semiconductor manufacturing device, which is prepared in advance, and is characterized in that the process of creating the change allowable range group includes: According to the specifications of the object to be processed, the expected specifications of the semiconductor element, and the characteristics of the semiconductor manufacturing device, a process for obtaining each allowable range of the plurality of device parameters that satisfies the expected specifications is obtained; The plurality of device parameters are changed to process a trial processed object. When the trial processed object is processed, each of the plurality of sensors including at least one additional sensor of the semiconductor manufacturing device collects at least one The process of producing the type of test data; and The data change detecting a plurality of measured data sensor constituted allowable range of process group. In addition, the method for monitoring a semiconductor manufacturing device described in the second aspect of the present invention is the invention described in the first aspect of the present invention, which is characterized in that each of the sensors is compared with at least one sensor detected by an actual process. The plurality of test data and the allowable test data corresponding to the change allowable range group. In addition, the method for monitoring a semiconductor manufacturing device described in item 3 of the scope of patent application of the present invention is the invention described in item 1 or 2 of the scope of patent application, characterized in that At least one size of this paper applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the notes on the back before filling out this page) Order from the Ministry of Economic Affairs Intellectual Property 笱 Printed by Employee Consumer Cooperative 559974 A7 B7 V. Invention Note (5) An exception is notified when the corresponding permitted detection data is inconsistent. (Please read the precautions on the back before filling in this page.) Furthermore, the method for controlling a semiconductor manufacturing device described in item 4 of the scope of patent application of the present invention is to set a plurality of device parameters of the semiconductor manufacturing device in the semiconductor manufacturing device. When the object to be processed manufactures a predetermined semiconductor element, the semiconductor manufacturing apparatus is controlled based on a variation allowable range group of a plurality of detection data of at least one sensor of the semiconductor manufacturing apparatus created in advance, and the characteristic is: The manufacturing process includes: a process of obtaining each variation allowable range of the plurality of device parameters that satisfies the expected specification according to the specification of the object to be processed, the expected specification of the semiconductor element, and the characteristics of the semiconductor manufacturing device; The plurality of device parameters are changed within a range to process a trial processed object; when the trial processed object is processed, a plurality of sensors including at least one additional sensor of the semiconductor manufacturing device is processed. A process for collecting at least one type of test data; and Ministry of Intellectual Property Bureau B (Industrial and Consumer Cooperative) prints a process from the tolerance range group of the detection data of the plurality of sensors composed of only the detection data that meets the expected specifications. Furthermore, the present invention applies for a patent The method for controlling a semiconductor manufacturing device described in the fifth item is characterized in that the invention described in the fourth item of the patent application is characterized in that a plurality of test data from at least one sensor detected by an actual process are compared with the test data. The permissible test data corresponding to the variation allowable range group. In addition, the paper size of the semiconductor paper described in item 6 of the patent application scope of the present invention applies the Chinese National Standard (CNS) A4 specification (210X297 mm) " " -8- 559974 A7 B7 V. Description of the invention (6) (Please read the notes on the back before filling out this page) The control method of the manufacturing device is in the invention described in item 4 or 5 of the scope of patent application, which is characterized by If it does not agree with the allowable test data corresponding to at least one of the plurality of test data, an abnormality is notified, and the process is stopped [simple description of the drawing] Η 1 is a structural diagram showing an example of a semiconductor manufacturing apparatus used in the method of the present invention. Η 2 is an explanatory diagram showing a correspondence relationship between process conditions and inspection data. [Explanation of symbols] 10: Plasma processing apparatus 11: Processing Room 12: Lower electrode 13: Upper electrode 1 4 and 1 5: Printed by the Intellectual Property of the Ministry of Economic Affairs of the Ministry of Economic Affairs, and printed by the Consumer Cooperative Cooperative 1 4 Β, 1 5 Β: Electrical measurement 値 (parameter sensor and additional sensor ) 1 6: Gas piping 16A, 16B: Gas piping 1 7 A > 1 7 Β: Flow control device 1 8 A, 1 8 B, 1 9 A: Fluid sensor (parameter sensor) This paper size is applicable China National Standard (CNS) A4 specification (210X297 mm) -9-559974 A7 _B7 V. Description of the invention (7) 1 9 • Poly 隹 J \ NN ring 2 0: Temperature sensor (parameter sensor) 2 1 • Beamsplitter (additional sensor) 2 2: Control device 2 2 A Detection data storage unit 2 2 B Variation allowable range group creation unit 2 2 C Variation allowable range group storage unit 2 2 D Comparison Fixed part 2 2 E Central control part 2 3 I I / O device (please read the precautions on the back before filling out this page) [Detailed description of the preferred embodiment] The following is a description of the embodiment shown in Figures 1 and 2 this invention. First, a plasma processing apparatus as a semiconductor manufacturing apparatus used in the present invention will be described. This plasma processing device 10 includes, for example, a processing chamber 1 1 made of aluminum capable of maintaining a high vacuum, as shown in FIG. 1, and is disposed in the processing chamber 11 1 of the intellectual property of the Ministry of Economic Affairs. A lower electrode 12 having a mounting table on which a processing object (for example, a wafer) W is placed, and an upper electrode 1 3 disposed above the lower electrode 12 are disposed on the lower electrode 12 and the upper electrode 1 as described later. The plasma generated by the three process gases is configured to etch the wafer W on the lower electrode 12. A first high-frequency power source 14 is connected to the lower electrode 12 and the intermediary integrator 14A. For example, the first high-frequency power source 14 applies a high-frequency power of 2 MHz. There is an electrical connection between the lower electrode 12 and the integrator 14A. The paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -10- 559974 A7 _ B7 V. Description of the invention (8) (Please read the back Please fill in this page again.) The measuring device 1 4 B, through this electrical measuring device 1 4 B, measures the basic frequency of the high-frequency voltage source 14 and the high-harmonic voltage, current, phase, and impedance applied to the lower electrode 12. And other electrical signals. Further, a first high-frequency power source 15 is connected to the intermediate electrode integrator 15A of the upper electrode 13 and, for example, a high-frequency power of 60 MHz is applied from the first high-frequency power source 15. An electrical measuring device 15B is connected between the upper electrode 13 and the integrator 15A, and the basic frequency and high harmonic of the high-frequency voltage source 15 applied to the upper electrode 13 are measured via the electrical measuring device 15B. Electrical signals such as voltage, current, phase, and impedance of waves. The intellectual property of the Ministry of Economic Affairs (the industrial and consumer cooperatives printed the above upper electrode 13 is hollow, for example, and a process gas supply source (not shown) is connected to the top surface via a gas pipe 16). This process gas supply source is used for It is configured by supplying two types of gases, such as an etching gas such as a CF-based gas and a carrier gas such as argon, and the first and second gas pipes 16A and 16B are merged at the gas pipe 16, A mixed gas of an etching gas and a carrier gas is supplied to the upper electrode 13 as a process gas. A plurality of holes (not shown) on the bottom surface of the upper electrode 13 are uniformly dispersed throughout the entire surface, and the process gas is supplied through these holes. Into the processing chamber 1 1. Further, first and second gas pipes 16A and 16B are respectively provided with first and second flow control devices 17A and 1B, and via these flow control devices 17 A and 17 B individually control the flow rates of the etching gas and the carrier gas. Furthermore, the first and second gas pipes 16 A and 16 B are respectively provided with first and second gas flow sensors 18 A, 1 9 B, with these gas flow sensors 1 8 A, 1 9 B Detect the flow of uranium engraved gas and carrier gas. This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) -11-559974 A7 B7 Printed by the 8th Industrial Cooperative Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (5) Description of the invention (9) A focus ring 1 9 is arranged on the outer peripheral edge portion of the top surface of the lower electrode 12, and a plasma generated in the processing chamber 11 by the focus ring 19 is thereby formed. Focus on the wafer W. An electrostatic chuck (not shown) is disposed inside the focusing ring 19, and the electrostatic chuck is used to electrostatically adsorb the wafer W. Furthermore, a temperature is disposed on the lower electrode 12 The sensor 20 detects the temperature of the lower electrode 12 and the temperature of the wafer W when the wafer W is processed by the temperature sensor 20. Therefore, the processing chamber 11 is supplied from the process gas supply source. When the process gas is supplied and the respective high-frequency power is applied to the upper and lower electrodes 1 2, 1 3 while maintaining a predetermined high vacuum, the high-frequency power of the upper electrode 13 generates a plasma P of the process gas, and The high-frequency power of the electrode 12 generates a bias potential (Bias) potential to reverse the wafer W. In addition, a window 1 1 A made of, for example, quartz glass is formed on the side surface of the processing chamber 11, and a plasma emission spectroscope (spectroscope) constituting the end point detection device is disposed on the window 1 1 A. 2 1. The spectroscope 21 is used to split a specific wavelength to detect the end point of the etching based on the intensity change of the specific wavelength. A pressure sensor (not shown) for detecting the internal pressure is provided in the processing chamber 11. This pressure sensor detects the pressure in the processing chamber 11. Further, the high-frequency voltage sources 14 and 15 and the first and second flow control devices 17 A and 17 B are connected to the control device 22, and the device parameters for etching are set through the control device 22. In addition, sensing devices 1 4 B, 1 5 B, gas flow sensors 1 8 A, 1 8 B, temperature sensors 2 0, and plasma light emitting spectroscopes 21 are connected to the control device 2 2. The uranium engraving condition is detected by these sensors. Moreover, (please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -12- 559974 A7 _ B7 V. Description of the invention (1〇) Control device 2 2 Control the plasma processing device based on the detection from the sensor (please read the precautions on the back before filling this page) 1 0, and perform the desired uranium engraving. Electrical measuring devices 1 4 B, 1 5 B, gas flow sensors 1 8 A, 1 8 B, temperature sensors 20, and pressure sensors are used as parameter sensors. Plasma light-emitting spectroscopes 2 1 functions as an additional sensor. In addition, the electrical measuring devices 1 4 B and 1 5 B are additional sensors for detecting electrical signals such as the fundamental frequency of high-frequency voltage sources 14, 15 and high-harmonic voltages, currents, phases, and impedances. And effect. Further, as shown in FIG. 1, the control device 22 includes a detection data storage unit 2 2A for detecting from the parameter sensor and the additional sensor, and storing the detection data separately for the detection data. The storage unit 2 2 A stores the test data created by the variation allowable range group creation unit 2 2 B, and stores the variation allowable range group created by the variation allowance range group creation unit 2 2 B. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 2 2 C, and compared with the change allowable range group and the test data obtained during the actual manufacturing process, the judgment unit 2 2 D, and the central control unit that controls these elements 2 2 E. As described below, this variation allowable range group is created using a trial wafer W before the actual manufacturing process is performed. In addition, an input / output device 2 3 is connected to the control device 2 2, whereby the input / output device 2 3 is used to set device parameters and the like, and a processing result is output to the input / output device 2 3 ° A data group of a plurality of sensors (parameter sensors and additional sensors) at the time of etching that meets a desired device specification (expected structure) is organized. This change is subject to the Chinese national standard (CNS) A4 specification (210X297 mm) 559974 A7 B7 V. Description of the invention (11) (Please read the precautions on the back before filling this page) Xu Jianqun contains manufacturing to meet expectations The maximum value and the minimum value of the detection data of each sensor in the structured device. Therefore, it can be judged that when all the detection data of the plurality of sensors are detected between each of the maximum and minimum radon, a semiconductor element (hereinafter referred to as "good product") that meets the expected structure from normal uranium engraving is manufactured. It can be judged that if any of the detection data of the plurality of sensors deviates from this range, a semiconductor device (hereinafter, referred to simply as “defective product”) that does not satisfy the expected structure by abnormal etching is manufactured. In addition, even if it is a device that is judged to be a defective product here, it does not mean that all of them are unusable devices. There are classes of defective products, and there are uses according to each class. Next, a method of creating a variation allowable range group will be described. The variation allowable range group is created using the trial wafer W before implementing the actual process as described above. The trial wafer W uses a trial wafer W having the same material and structure as the actual process. As a variation allowable range group, first according to the specifications of the wafer W before the uranium engraving process, the expected structure of the device after the uranium engraving process, the allowable range of the expected structure, and the characteristics library of the plasma processing device (Library), The same method as in the conventional method is used to obtain a plurality of device parameters considered to be optimal. The specifications of the printed trial wafer W printed by the employees ’cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs include, for example, information related to the underlying material (film type, film thickness, structure, manufacturing method, etc.) and information about the etched film (film type, film Information such as thickness, structure, manufacturing method, etc.) and information about the mask material (film type, film thickness, mask pattern, etc.). Information indicating the expected structure of the device includes information such as pattern width, etching depth, taper angle, degree of groove wall recess (Bowing), and etching amount of the mask material from the shape surface of the device, and from the electrical characteristic surface Wiring resistance, contact current ^ Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -14-559974 A7 B7 V. Description of invention (12) (Please read the precautions on the back before filling this page) Charge information, leakage current, insulation damage, etc. The allowable range of the expected structure means a range in which the shape surface and the electrical characteristic surface can be tolerated even by a deviation of the device specifications. Further, the information on the characteristics library of the plasma processing apparatus includes information on, for example, the type of the plasma processing apparatus, the processing chamber, the electrode structure, and the high-frequency power supply. The optimal device parameters are obtained from the actual knowledge and / or experiments based on this information. The above-mentioned optimal device parameters are easily influenced by the high-frequency power of the lower electrode 12 of the plasma processing apparatus 10, the high-frequency power of the upper electrode 13, the distance between the two electrodes 1, 2, 13 and the lower electrode 12 The device parameters of the plasma state such as temperature, pressure in the processing chamber 11, etching gas flow rate, and carrier gas flow rate are configured. Therefore, the processing conditions can be set by inputting these device parameters to the plasma processing device 10 through the input / output device 23. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. After determining the optimal device parameters, use the conventionally known experimental planning method to actually use the trial wafer W etching to find the device that satisfies the device centered on the optimal device parameters. It is expected that each of the plurality of device parameters of the structure has a variation allowable range and a group of variation allowable ranges of the detection data. By using the experimental planning method to consider the main effect or interaction of the device parameters, the allowable range of this variation can be effectively obtained. When using a trial wafer W for uranium engraving, the parameters of each device are changed between the maximum, minimum, and maximum and minimum according to the experimental plan method, so that the electrical measuring devices when the parameters of each device change 1 4 B, 1 5 B, First, the electrical signals of the second gas flow sensor 1 8 A, 1 8 B, temperature sensor 20, and plasma light emitting spectroscope 21, etc. are detected as detection data signals, and in each trial The wafer will report these test data to the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -15- 559974 A7 B7____ 5. Description of the invention (13) (Please read the precautions on the back before filling this page) After the No. is taken into the control device 22, a plurality of test data of each trial wafer W are stored in the test data storage section 2 2 A. At this time, the detection data from the plurality of parameter sensors and additional sensors of each trial wafer W are subjected to calculation processing, and the average 値 of each of the parameter sensors and the additional sensors is stored. Each trial wafer W is stored in association with its inspection data. In addition, since the plasma processing apparatus 10 continues to use the consumables such as the focusing ring 19 and the like, or is deposited in the processing chamber 11 of the plasma by-products, the characteristics of the apparatus change over time. These effects can create a more accurate variation allowable range group by obtaining the same detection data for a device in which a consumable is consumed to a certain degree. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. After etching all of the trial wafers W, use various inspection machines to check the shape or electrical characteristics of the trial wafers W processed each time each device parameter is changed. It is tested whether the shape or electrical characteristics of the wafer W satisfy the expected structure of each device. Since a plurality of device parameters are changed around the optimal device parameters, the trial wafer W is etched. Therefore, among the processed trial wafers W, the shape or electrical characteristics of the device meets the expected structure of the device, and some of the trial wafers W have different structures. fulfilled. FIG. 2 shows the relationship between the device parameter group P of all the trial wafers W and the detection data group D of the parameter sensor and the additional sensor corresponding to the device parameter group p. These device parameter groups P and The inspection data group D includes both a trial wafer W that satisfies the expected structure and a trial wafer W that does not satisfy the expected structure. In FIG. 2, the allowable device parameter group P 1 and the allowable inspection data group (variation allowable range group) D 1 for the trial wafer w that satisfies the expected structure are shown in blank portions, and the test for the unsatisfactory structure is shown in oblique lines. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -16-559974 A7 __B7_ V. Description of the invention (14) (Please read the precautions on the back before filling this page) Device parameters for wafer W Group P 2 and detection data group D 2. In addition, after obtaining the allowable device parameter group P 1, the wafer W is further processed using the allowable device parameter in the allowable device parameter group P 1. By obtaining the allowable detection data at this time, it is possible to change the detection data of the allowable range group. More fulfilling. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. If the number and the like of each trial wafer W that satisfies the expected structure are input from the input / output device 2 3, the control device 2 2 passes the central control unit 2 2 E to the inspection data. Only the detection data group D of the storage unit 2 2 A is extracted and the detection data group D 1 is taken into the variation allowable range group preparation unit 2 2 B. After the variation allowable range group creating unit 2 2 B classifies, for example, the allowable detection data group D 1 into each of a plurality of sensors, each of the sensors is created as a variation allowable range group in a table arranged in order of magnitude from largest to smallest. After the allowable detection data of the device is stored, the change allowable range group is stored in the change allowable range group storage unit 2 2 C via the central control unit 2 2 E. Furthermore, the comparison and determination unit 2 2 D functions during the actual manufacturing process, and often compares the detection data input into the uranium engraving of the wafer W by each sensor with the data acquired by the variation allowable range group storage unit 2 2 C. If the corresponding allowable detection data D 1 does not agree with the allowable detection data d 1, an abnormal signal is output to notify the abnormality of the etching, and the process is stopped by the control device 22. For example, if there is an abnormality in the high-frequency power supply 1 4 or 15 for some reason during processing, the abnormality between the detection data of the electrical measuring devices 1 4 B and 1 5 B and the allowable detection data D 1 may be displayed. This detection does not immediately detect anomalies. In addition, unlike the permissible inspection data, it can also be set by approaching these as abnormally close data within the range of the maximum and minimum values, so that when any detection data reaches a different paper size, the Chinese national standard (CNS) is applied. ) A4 specification (210X297mm) -17- 559974 B7 V. Description of the invention (15) (Please read the precautions on the back before filling this page) When the information is often close, the abnormal state will be notified when it is close. In addition, during the actual manufacturing process, the average 値 of each wafer W may be obtained one by one from the inspection data input to the control device 22 to compare the change allowable range of the average 値 and the average 値 of the change allowable range group. However, since the plasma processing apparatus 10 continues to use consumables or deposits in the processing chamber 11 of the plasma by-products, the characteristics of the apparatus change over time. Therefore, even if the plasma processing apparatus 10 is set, The optimal operating parameters, the detection data of each sensor change over time, and the detection data corresponding to the optimal operating parameters also change. In the present embodiment, when the wafer W is etched with the optimal operating parameters, the detection data from each sensor and the above-mentioned variation allowable range group are constantly monitored, so that changes in device characteristics over time can be known. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, an embodiment of the method of the present invention will be described. After the plurality of optimal device parameters are input to the plasma processing device 10 through the input / output device 23, if the plasma processing device 10 is driven, the wafer W is placed on the lower electrode 12 and supplied by the process gas When the source supplies the etching gas and the carrier gas through the first and second flow control devices 17 A and 17 B, these gases are taken as process gases and flow into the processing chamber 11 from the upper electrode 13. Furthermore, if the first and second high-frequency power sources 14 and 15 are applied to the upper and lower electrodes 1 2, 1 3, a plasma P is generated between the upper and lower electrodes 1 2, 1 3, and the wafer W is etched. . At this time, electrical signals such as the fundamental frequencies of the high-frequency power sources 14 and 15 and high-harmonic voltages, currents, phases, and impedances are detected by the electrical measuring devices 1 4 B and 1 5 B. Two gas flow sensors 1 8 A and 1 8 B respectively detect the flow of etching gas and carrier gas, and the temperature of the lower electrode 1 2 is detected by the temperature sensor 20. The paper size applies to Chinese National Standard (CNS) A4 specifications. (210X297 mm) -18- 559974 A7 B7 V. Description of the invention (16) (Please read the notes on the back before filling this page). Similarly, the pressure of the gas in the processing chamber 11 or the temperature of the upper electrode 13 is detected. If the detection data of these parameter sensors and additional sensors are input to the control device 2 2, the comparison and determination unit 2 2 D monitors each detection data, and often compares each detection data with its corresponding allowable range group. To allow the test data D 1 to determine whether each test data is within the allowable range. If the test data (or average plutonium data) is within the allowable range until the uranium engraving of wafer W is completed, the processed wafer W can obtain a device (Device) that meets the expected structure. The processing of wafer W is continued. If any of the inspection data reaches abnormally close data, the comparison and determination unit 2 2D judges that its main output is abnormally close to the signal, and notifies and warns that the abnormal state is approaching. Furthermore, after the processing of wafer W is continued, if each of the detection data is out of the allowable range, the comparison and determination unit 2 2D outputs an abnormal signal to notify the device at this time that the device is in an abnormal state that does not meet the expected structure. Furthermore, by outputting abnormal data to the input / output device 2 3 when there is an abnormality, the cause of the abnormality can be reliably identified, and the process conditions can be accurately corrected. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs (industrial and consumer cooperatives) As described above, if the trial wafer W is etched using the plasma processing apparatus 10 according to this embodiment, it is determined whether the processed trial wafer W satisfies the expected structure. The variation allowable range group consisting only of the allowable detection data D 1 of the plurality of parameter sensors and additional sensors when satisfying the expected structure is used to monitor and control the plasma processing device 10 based on the change allowable range group. Extend the allowable range of the variation of the parameter sensor and the additional sensor to maximize the width of the operation of the device, improve the operation rate, and monitor and control the normal and abnormal process with high sensitivity and reliability. Applicable to China National Standard (CNS) A4 specification (210X297 mm) -19- 559974 A7 B7 V. Description of the invention (17) Moreover, for the case where there is a process abnormality, the abnormal detection data can be definitely identified and it can be reliably corrected Device parameters. (Please read the precautions on the back before filling out this page} Also, if this embodiment is used, it is used for comparison. The plurality of detection data of the process detection and the allowable detection data D 1 of the variation allowable range group, so it can be simply known whether the detection data of any parameter sensor is abnormal, and the device parameters can be corrected in a short time, so that the process conditions are restored to It is in a good state. Moreover, by setting the abnormal approach data within the allowable range group, any detected data will be notified to approach the abnormal state, so the abnormality can be predicted instantly. Furthermore, it is used for sensing when more than a plurality of parameters The limit of the allowable detection data corresponding to at least one of the detection data of the sensor and the additional sensor immediately reports an abnormality and stops the process. Therefore, when the process is abnormal, the plasma processing apparatus 10 is stopped reliably, and the subsequent Manufacture of a defective device. In addition, although the above-mentioned embodiment uses several parameter sensors and additional sensors to obtain detection data, the present invention is not limited to these sensors, and of course, it is also possible to use a detection circuit. Other sensors for the state of the pulp (sensors for detecting the density of the plasma or the temperature of the plasma), residual gas analyzers Bureau of Intellectual Property, Ministry of Economic Affairs: Printed by the Consumer Engineering Cooperative Co., Ltd. (RGA), Plasma Detector in Plasma, IR-LAS Plasma, etc. Detectors for measuring the density or density of radicals in plasma, and the thickness of deposited films on process containers Or film type measuring device, wafer surface temperature, process container temperature, electrode surface temperature measuring device, etc. In the above-mentioned embodiment, although the plasma processing device 10 itself is used to notify the process abnormality, it can also be processed by plasma. Device 10 notifies the upper computer of the abnormality, and informs the operator of the abnormality through the upper computer. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -20- 559974 A7 B7 V. Description of the invention (18) [Inventive Efficacy] According to the invention described in claims 1 to 16 of the scope of patent application of the present invention, the operation of the device can be provided with a wide width and the operation rate can be increased ', and the processing of the object to be processed can be judged with high sensitivity , Abnormality, and even if there is an abnormality in the processing of the object to be processed, the semiconductor manufacturing device can be easily and reliably corrected to a normal state. Depending on the method and the control method. (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property of the Ministry of Economic Affairs, Employee Consumer Cooperatives This paper is sized for China National Standard (CNS) A4 (210X297 mm) -21-