CN110473929B - 一种黑硅制备方法及太阳能电池 - Google Patents
一种黑硅制备方法及太阳能电池 Download PDFInfo
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- CN110473929B CN110473929B CN201910769412.4A CN201910769412A CN110473929B CN 110473929 B CN110473929 B CN 110473929B CN 201910769412 A CN201910769412 A CN 201910769412A CN 110473929 B CN110473929 B CN 110473929B
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 74
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000003054 catalyst Substances 0.000 claims abstract description 120
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 87
- 239000010703 silicon Substances 0.000 claims abstract description 87
- 239000000084 colloidal system Substances 0.000 claims abstract description 28
- 239000002253 acid Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 14
- 230000005641 tunneling Effects 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- -1 silver ions Chemical class 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130205A (zh) * | 2010-12-10 | 2011-07-20 | 上海太阳能电池研究与发展中心 | 一种多晶硅太阳能电池的表面催化制绒方法 |
CN103668466A (zh) * | 2012-09-17 | 2014-03-26 | 无锡尚德太阳能电力有限公司 | 一种多晶硅片制绒液及制绒方法 |
CN105810762A (zh) * | 2016-05-23 | 2016-07-27 | 协鑫集成科技股份有限公司 | 晶体硅片纳米绒面结构及其制备方法 |
CN108470781A (zh) * | 2018-02-28 | 2018-08-31 | 无锡尚德太阳能电力有限公司 | 选择性发射极黑硅双面perc晶体硅太阳能电池的制作方法 |
CN109244182A (zh) * | 2018-09-03 | 2019-01-18 | 江西展宇新能源股份有限公司 | 一种黑硅perc双面电池及其制作方法 |
CN109494261A (zh) * | 2018-10-19 | 2019-03-19 | 晶澳(扬州)太阳能科技有限公司 | 硅基太阳能电池及制备方法、光伏组件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701392A (zh) * | 2015-01-30 | 2015-06-10 | 泰州德通电气有限公司 | 一种具有低反射率黑硅的太阳能电池制备方法 |
CN105047758A (zh) * | 2015-08-18 | 2015-11-11 | 广东爱康太阳能科技有限公司 | 一种黑硅太阳能电池及其制备方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130205A (zh) * | 2010-12-10 | 2011-07-20 | 上海太阳能电池研究与发展中心 | 一种多晶硅太阳能电池的表面催化制绒方法 |
CN103668466A (zh) * | 2012-09-17 | 2014-03-26 | 无锡尚德太阳能电力有限公司 | 一种多晶硅片制绒液及制绒方法 |
CN105810762A (zh) * | 2016-05-23 | 2016-07-27 | 协鑫集成科技股份有限公司 | 晶体硅片纳米绒面结构及其制备方法 |
CN108470781A (zh) * | 2018-02-28 | 2018-08-31 | 无锡尚德太阳能电力有限公司 | 选择性发射极黑硅双面perc晶体硅太阳能电池的制作方法 |
CN109244182A (zh) * | 2018-09-03 | 2019-01-18 | 江西展宇新能源股份有限公司 | 一种黑硅perc双面电池及其制作方法 |
CN109494261A (zh) * | 2018-10-19 | 2019-03-19 | 晶澳(扬州)太阳能科技有限公司 | 硅基太阳能电池及制备方法、光伏组件 |
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Address after: 311305 No. 1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee after: CHINT SOLAR (ZHEJIANG) Co.,Ltd. Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 311305 No. 1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. Patentee before: HAINING ASTRONERGY TECHNOLOGY Co.,Ltd. |
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Address after: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Patentee before: Zhengtai Xinneng Technology Co.,Ltd. |