CN105047758A - 一种黑硅太阳能电池及其制备方法 - Google Patents
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Abstract
本发明公开一种黑硅太阳能电池制备方法,该方法包括步骤:a)对硅片进行酸制绒处理;b)使用金属催化化学刻蚀法(MCCE)对硅片进行刻蚀;c)使用三氯氧磷扩散形成p-n结;d)使用酸溶液或碱溶液进行去除磷硅玻璃;e)在硅片正面使用臭氧形成高折射率二氧化硅层;f)在高折射率二氧化硅层上使用PECVD沉积高折射率氮化硅层;g)金属电极制备;h)高温烧结,形成黑硅太阳能电池。本发明提供了一种黑硅太阳能电池及其制备方法,相较于传统太阳能电池,可有效降低太阳能电池表面反射率,短路电流大幅提高,进而提升光电转换效率,不仅具有结构设计新颖、制作简单、成本低廉,而且适合大批量生产。
Description
技术领域
本发明涉及晶硅太阳能电池技术领域,尤其涉及一种黑硅太阳能电池及其制备方法。
背景技术
太阳能电池是一种有效地吸收太阳辐射能,利用光生伏打效应把光能转换成电能的器件,当太阳光照在半导体P-N结(P-NJunction)上,形成新的空穴-电子对(V-Epair),在P-N结电场的作用下,空穴由N区流向P区,电子由P区流向N区,接通电路后就形成电流。
由于是利用各种势垒的光生伏特效应将太阳光能转换成电能的固体半导体器件,故又称太阳能电池或光伏电池,是太阳能电池阵电源系统的重要组件。太阳能电池主要有晶硅(Si)电池,三五族半导体电池(GaAs,Cds/Cu2S,Cds/CdTe,Cds/InP,CdTe/Cu2Te),无机电池,有机电池等,其中晶硅太阳能电池居市场主流主导地位。晶硅太阳能电池的基本材料为纯度达99.9999%、电阻率在10Ω-cm以上的P型单晶硅,包括正面绒面、正面p-n结、正面减反射膜、正背面电极等部分。在组件封装为正面受光照面加透光盖片(如高透玻璃及EVA)保护,防止电池受外层空间范爱伦带内高能电子和质子的辐射损伤。
减少电池表面光反射率的方式对电池效率提升有很大帮助。目前常规电池表面减反有两种技术:一种是在电池表面形成具陷光功能的微结构,通常采用酸或碱溶液刻蚀产生微米绒面结构,另一种方法是在电池表面镀上减反膜,常用的有Si3N4,SiOx,ZnO,TiOx等薄膜或其中2种薄膜的组合。
因此,黑硅材料是在晶硅表面形成一层纳米量级的微结构,几乎能陷住所有可见光,反射率可低至零,当光照射在黑硅表面时,光子进入尖锥结构后没有被直接反射,而是经多次折射后进入尖锥底部,减少了光的反射。黑硅不仅在可见光范围内反射率低,在红外光区域亦是如此,因此在光电探测以及太阳能电池领域具有很强的优势。
发明内容
本发明提出一种黑硅太阳能电池及其制备方法,以解决目前太阳能电池表面反射率差,短路电流小,光电转换效率低的技术问题。
本发明采用如下技术方案实现:一种黑硅太阳能电池制备方法,其中,该制备方法包括如下步骤:
a)对硅片进行酸制绒处理;
b)使用金属催化化学刻蚀法(MCCE)对硅片进行刻蚀;
c)使用三氯氧磷扩散形成p-n结;
d)使用酸溶液或碱溶液进行去除磷硅玻璃;
e)在硅片正面使用臭氧形成高折射率二氧化硅层;
f)在高折射率二氧化硅层上使用PECVD沉积高折射率氮化硅层;
g)金属电极制备;
h)高温烧结,形成黑硅太阳能电池。
作为上述方案的改进,所述步骤b中还包括以下步骤,将酸制绒后的硅片置于0.03-0.3mol/L的AgNO3溶液中,以电化学沉积法来实现Ag纳米颗粒沉积,并采用质量比H2O2/HF为1.0-1.5的HF和H2O2混合溶液刻蚀负载有Ag纳米颗粒的硅片。
作为上述方案的改进,所述步骤b中还包括以下步骤:采用湿式化学清洗去除Ag颗粒,使用HPM(质量比HCl:H2O2:H2O为1:1:6,反应温度70-90℃)、DHF(质量比HF/H2O为1:100,反应温度为室温)、(质量比HNO3:H2O为2:5,反应温度为室温)清洗去除Ag颗粒,采用质量分数0.036%的KOH溶液以及RCA清洗黑硅硅片,修正刻蚀。
作为上述方案的改进,所述步骤e中,所述高折射率二氧化硅层的折射率在2.5-3.0,膜厚为1-5nm。
作为上述方案的改进,所述黑硅太阳能电池正面反射率为0.5%。
作为上述方案的改进,高折射率二氧化硅层膜厚为3nm。
作为上述方案的改进,所述高折射率二氧化硅层折射率为2.6。
作为上述方案的改进,所述高折射率氮化硅层膜厚为80nm。
作为上述方案的改进,所述高折射率氮化硅层折射率为2.12。
相应地,本发明还提供一种黑硅太阳能电池,其由上述的制备方法制得。
与现有技术相比,本发明具有如下有益效果:本发明提供了一种黑硅太阳能电池及其制备方法,相较于传统太阳能电池,所述黑硅太阳能电池可有效降低太阳能电池表面反射率,短路电流大幅提高(150-300mA),进而提升光电转换效率,不仅具有结构设计新颖、制作简单、成本低廉,而且适合大批量生产。
附图说明
图1是本发明一种黑硅太阳能电池制备方法的流程图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明作进一步地详细描述。
如图1所示,一种黑硅太阳能电池制备方法,其中,该制备方法包括如下步骤:
步骤1:对硅片进行酸制绒处理;
步骤2:使用金属催化化学刻蚀法(MCCE)对硅片进行刻蚀;
步骤3:使用三氯氧磷扩散形成p-n结;
步骤4:使用酸溶液或碱溶液进行去除磷硅玻璃;
步骤5:在硅片正面使用臭氧形成高折射率二氧化硅层;
步骤6:在高折射率二氧化硅层上使用PECVD沉积高折射率氮化硅层;
步骤7:金属电极制备;
步骤8:高温烧结,形成黑硅太阳能电池。
其中,所述步骤2中还包括以下步骤,将酸制绒后的硅片置于0.03-0.3mol/L的AgNO3溶液中,以电化学沉积法来实现Ag纳米颗粒沉积,并采用质量比H2O2/HF为1.0-1.5的HF和H2O2混合溶液刻蚀负载有Ag纳米颗粒的硅片。
所述步骤2中还包括以下步骤:采用湿式化学清洗去除Ag颗粒。
所述步骤2中还包括以下步骤,使用HPM(质量比HCl:H2O2:H2O为1:1:6,反应温度70-90℃)、DHF(质量比HF/H2O为1:100,反应温度为室温)、(质量比HNO3:H2O为2:5,反应温度为室温)清洗去除Ag颗粒。
所述步骤2中还包括以下步骤,采用质量分数0.036%的KOH溶液以及RCA清洗黑硅硅片,修正刻蚀。
所述步骤5中,所述高折射率二氧化硅层的折射率在2.5-3.0,膜厚为1-5nm。所述黑硅太阳能电池正面反射率为0.5%。
于一实施例中,所述高折射率二氧化硅层膜厚为3nm。所述高折射率二氧化硅层折射率为2.6。所述高折射率氮化硅层膜厚为80nm。所述高折射率氮化硅层折射率为2.12。
相应地,本发明还提供一种黑硅太阳能电池,其由上述的制备方法制得。
与现有技术相比,本发明具有如下有益效果:本发明提供了一种黑硅太阳能电池及其制备方法,相较于传统太阳能电池,所述黑硅太阳能电池可有效降低太阳能电池表面反射率,短路电流大幅提高(150-300mA),进而提升光电转换效率,不仅具有结构设计新颖、制作简单、成本低廉,而且适合大批量生产。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种黑硅太阳能电池制备方法,其特征在于,该制备方法包括如下步骤:
a)对硅片进行酸制绒处理;
b)使用金属催化化学刻蚀法对硅片进行刻蚀;
c)使用三氯氧磷扩散形成p-n结;
d)使用酸溶液或碱溶液进行去除磷硅玻璃;
e)在硅片正面使用臭氧形成高折射率二氧化硅层;
f)在高折射率二氧化硅层上使用PECVD沉积高折射率氮化硅层;
g)金属电极制备;
h)高温烧结,形成黑硅太阳能电池。
2.根据权利要求1所述的一种黑硅太阳能电池制备方法,其特征在于,所述步骤b中还包括以下步骤,将酸制绒后的硅片置于0.03-0.3mol/L的AgNO3溶液中,以电化学沉积法来实现Ag纳米颗粒沉积,并采用质量比H2O2/HF为1.0-1.5的HF和H2O2混合溶液刻蚀负载有Ag纳米颗粒的硅片。
3.根据权利要求2所述的一种黑硅太阳能电池制备方法,其特征在于,所述步骤b中还包括以下步骤:采用湿式化学清洗去除Ag颗粒,使用HPM(质量比HCl:H2O2:H2O为1:1:6,反应温度70-90℃)、DHF(质量比HF/H2O为1:100,反应温度为室温)、(质量比HNO3:H2O为2:5,反应温度为室温)清洗去除Ag颗粒,采用质量分数0.036%的KOH溶液以及RCA清洗黑硅硅片,修正刻蚀。
4.根据权利要求1所述的一种黑硅太阳能电池制备方法,其特征在于,所述步骤e中,所述高折射率二氧化硅层的折射率在2.5-3.0,膜厚为1-5nm。
5.根据权利要求1所述的一种黑硅太阳能电池制备方法,其特征在于,所述黑硅太阳能电池正面反射率为0.5%。
6.根据权利要求4所述的一种黑硅太阳能电池制备方法,其特征在于,高折射率二氧化硅层膜厚为3nm。
7.根据权利要求4所述的一种黑硅太阳能电池制备方法,其特征在于,所述高折射率二氧化硅层折射率为2.6。
8.根据权利要求4所述的一种黑硅太阳能电池制备方法,其特征在于,所述高折射率氮化硅层膜厚为80nm。
9.根据权利要求4所述的一种黑硅太阳能电池制备方法,其特征在于,所述高折射率氮化硅层折射率为2.12。
10.一种黑硅太阳能电池,其特征在于,其由权利要求1-9任一项所述的制备方法制得。
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