CN110393007B - 摄像元件以及摄像装置 - Google Patents

摄像元件以及摄像装置 Download PDF

Info

Publication number
CN110393007B
CN110393007B CN201880009220.7A CN201880009220A CN110393007B CN 110393007 B CN110393007 B CN 110393007B CN 201880009220 A CN201880009220 A CN 201880009220A CN 110393007 B CN110393007 B CN 110393007B
Authority
CN
China
Prior art keywords
unit
photoelectric conversion
electric charge
output
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880009220.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN110393007A (zh
Inventor
松本繁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to CN202111314748.5A priority Critical patent/CN113923383A/zh
Publication of CN110393007A publication Critical patent/CN110393007A/zh
Application granted granted Critical
Publication of CN110393007B publication Critical patent/CN110393007B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201880009220.7A 2017-01-31 2018-01-31 摄像元件以及摄像装置 Active CN110393007B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111314748.5A CN113923383A (zh) 2017-01-31 2018-01-31 摄像元件以及摄像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-016286 2017-01-31
JP2017016286 2017-01-31
PCT/JP2018/003278 WO2018143295A1 (ja) 2017-01-31 2018-01-31 撮像素子および撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202111314748.5A Division CN113923383A (zh) 2017-01-31 2018-01-31 摄像元件以及摄像装置

Publications (2)

Publication Number Publication Date
CN110393007A CN110393007A (zh) 2019-10-29
CN110393007B true CN110393007B (zh) 2021-11-26

Family

ID=63039799

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201880009220.7A Active CN110393007B (zh) 2017-01-31 2018-01-31 摄像元件以及摄像装置
CN202111314748.5A Pending CN113923383A (zh) 2017-01-31 2018-01-31 摄像元件以及摄像装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202111314748.5A Pending CN113923383A (zh) 2017-01-31 2018-01-31 摄像元件以及摄像装置

Country Status (4)

Country Link
US (4) US11108978B2 (https=)
JP (3) JP6809542B2 (https=)
CN (2) CN110393007B (https=)
WO (1) WO2018143295A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021162017A1 (ja) * 2020-02-14 2021-08-19 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置
JP7782144B2 (ja) * 2021-05-26 2025-12-09 株式会社ニコン 撮像素子、及び、撮像装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452153B1 (en) * 1999-11-19 2002-09-17 Csem Centre Suisse D'electronique Et De Microtechnique Sa Optoelectronic sensor
US7199410B2 (en) * 1999-12-14 2007-04-03 Cypress Semiconductor Corporation (Belgium) Bvba Pixel structure with improved charge transfer
CN101047797A (zh) * 2006-03-31 2007-10-03 佳能株式会社 图像传感器
JP2015204469A (ja) * 2014-04-10 2015-11-16 キヤノン株式会社 撮像素子及び撮像装置
JP2015211257A (ja) * 2014-04-24 2015-11-24 株式会社東芝 固体撮像装置
JP2016015680A (ja) * 2014-07-03 2016-01-28 株式会社ニコン 固体撮像素子および撮像装置
JP2016139859A (ja) * 2015-01-26 2016-08-04 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6914227B2 (en) 2001-06-25 2005-07-05 Canon Kabushiki Kaisha Image sensing apparatus capable of outputting image by converting resolution by adding and reading out a plurality of pixels, its control method, and image sensing system
JP4355148B2 (ja) * 2003-02-28 2009-10-28 パナソニック株式会社 固体撮像装置の駆動方法
JP4049010B2 (ja) * 2003-04-30 2008-02-20 ソニー株式会社 表示装置
JP4336544B2 (ja) * 2003-07-18 2009-09-30 パナソニック株式会社 固体撮像装置
US7773143B2 (en) * 2004-04-08 2010-08-10 Tessera North America, Inc. Thin color camera having sub-pixel resolution
US7719008B2 (en) * 2006-02-03 2010-05-18 Samsung Electronics Co., Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate
JP2009177749A (ja) * 2008-01-28 2009-08-06 Panasonic Corp 固体撮像装置
JP5407264B2 (ja) * 2008-10-09 2014-02-05 ソニー株式会社 固体撮像素子およびカメラシステム
US8130302B2 (en) 2008-11-07 2012-03-06 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits
US8913166B2 (en) 2009-01-21 2014-12-16 Canon Kabushiki Kaisha Solid-state imaging apparatus
EP2234387B8 (en) 2009-03-24 2012-05-23 Sony Corporation Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus
JP4941490B2 (ja) 2009-03-24 2012-05-30 ソニー株式会社 固体撮像装置、及び電子機器
JP2011044887A (ja) 2009-08-20 2011-03-03 Canon Inc 固体撮像装置
GB2474014B (en) 2009-09-24 2015-04-15 Selex Es Ltd IR detection system and method
JP5744599B2 (ja) 2011-03-31 2015-07-08 キヤノン株式会社 撮像素子、および撮像装置
JP5926529B2 (ja) 2011-10-18 2016-05-25 キヤノン株式会社 撮像素子及び撮像装置
FR2984608A1 (fr) 2011-12-19 2013-06-21 St Microelectronics Sa Procede de capture d'image au moyen d'un capteur d'image
KR101969514B1 (ko) * 2012-09-11 2019-04-17 삼성디스플레이 주식회사 표시 장치 및 그 구동 방법
JP2014175934A (ja) 2013-03-11 2014-09-22 Canon Inc 撮像素子、その駆動方法および撮像装置
JP6346479B2 (ja) 2013-05-16 2018-06-20 キヤノン株式会社 撮像装置、撮像装置の制御方法及びプログラム
KR101900668B1 (ko) 2013-11-18 2018-09-20 가부시키가이샤 니콘 고체 촬상 소자 및 촬상 장치
US9674470B2 (en) 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
JP2016082306A (ja) * 2014-10-10 2016-05-16 キヤノン株式会社 撮像装置、撮像システム及び撮像装置の駆動方法
JP6588702B2 (ja) 2015-01-05 2019-10-09 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体
US9883130B2 (en) * 2015-03-09 2018-01-30 Rambus Inc. Image sensor with feedthrough-compensated charge-binned readout
JP5897752B1 (ja) 2015-05-14 2016-03-30 ブリルニクスジャパン株式会社 固体撮像装置およびその駆動方法、電子機器
KR20170056909A (ko) 2015-11-16 2017-05-24 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452153B1 (en) * 1999-11-19 2002-09-17 Csem Centre Suisse D'electronique Et De Microtechnique Sa Optoelectronic sensor
US7199410B2 (en) * 1999-12-14 2007-04-03 Cypress Semiconductor Corporation (Belgium) Bvba Pixel structure with improved charge transfer
CN101047797A (zh) * 2006-03-31 2007-10-03 佳能株式会社 图像传感器
JP2015204469A (ja) * 2014-04-10 2015-11-16 キヤノン株式会社 撮像素子及び撮像装置
JP2015211257A (ja) * 2014-04-24 2015-11-24 株式会社東芝 固体撮像装置
JP2016015680A (ja) * 2014-07-03 2016-01-28 株式会社ニコン 固体撮像素子および撮像装置
JP2016139859A (ja) * 2015-01-26 2016-08-04 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体

Also Published As

Publication number Publication date
JPWO2018143295A1 (ja) 2019-11-14
CN113923383A (zh) 2022-01-11
JP2022191432A (ja) 2022-12-27
JP7167974B2 (ja) 2022-11-09
US20210352230A1 (en) 2021-11-11
US20240155258A1 (en) 2024-05-09
US11108978B2 (en) 2021-08-31
US20200036916A1 (en) 2020-01-30
US11917310B2 (en) 2024-02-27
US20250080866A1 (en) 2025-03-06
US12177583B2 (en) 2024-12-24
WO2018143295A1 (ja) 2018-08-09
JP6809542B2 (ja) 2021-01-06
JP7540473B2 (ja) 2024-08-27
JP2021048627A (ja) 2021-03-25
CN110393007A (zh) 2019-10-29

Similar Documents

Publication Publication Date Title
JP7388476B2 (ja) 撮像素子および撮像装置
US20250080866A1 (en) Image sensor and image-capturing device including adjustment unit for reducing capacitance
JP7491341B2 (ja) 撮像素子および撮像装置
CN110463190A (zh) 摄像元件、焦点调节装置及摄像装置
JP7160081B2 (ja) 撮像素子および撮像装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant