CN110389386A - It can be used for the high q-factor magnetoelectricity metamaterial structure of geomagnetic field measuring - Google Patents
It can be used for the high q-factor magnetoelectricity metamaterial structure of geomagnetic field measuring Download PDFInfo
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- CN110389386A CN110389386A CN201810339492.5A CN201810339492A CN110389386A CN 110389386 A CN110389386 A CN 110389386A CN 201810339492 A CN201810339492 A CN 201810339492A CN 110389386 A CN110389386 A CN 110389386A
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- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V3/00—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation
- G01V3/40—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation specially adapted for measuring magnetic field characteristics of the earth
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Abstract
The present invention relates to a kind of high q-factor magnetoelectricity metamaterial structures.Including magnetostrictive layer, gasket and piezo-electric resonator；The piezo-electric resonator is twin beams tuning fork structure；The both ends of magnetostrictive layer and piezo-electric resonator are connected by gasket, keep two each vibration beams of piezo-electric resonator hanging, to form magnetostriction materials/piezo-electric resonator composite construction；The magnetostriction materials/piezo-electric resonator composite construction has high Q value, and under resonance condition, magnetic-electric coefficient is amplified Q times with the sensitivity that external magnetic field changes, so as to realize the high-sensitivity measurement in earth's magnetic field.
Description
Technical field
The present invention relates to a kind of magnetoelectricity metamaterial structure or transducing unit, the magnetoelectricity metamaterial structure or transducing unit have
High q-factor, and can be used for the high-acruracy survey in earth's magnetic field.
Background technique
Material with magnetoelectric effect can be used for the application fields such as Magnetic Sensor, magnetic memory, be functional material and device
One research hotspot in field.The initial hair in existing monophase materials (such as Cr2O3, Ti2O3 etc.) in nature of scientist
Existing magnetoelectric effect, but the magnetic-electric coefficient of these monophase materials is very low, is not able to satisfy practical application request.By magnetostriction materials
With piezoelectric material compound composition magnetostriction/piezo-electricity composite material in some way, since product performance obtains magnetoelectricity effect
It answers.In comparison, the magnetoelectricity conversion coefficient of this artificial synthesized magnetoelectric material is larger, can with realization high sensitivity magnetic
Detector.So far, magnetostriction/piezo-electricity composite material have been developed particle mixed phase is compound, lamination is compound, transverse direction is compound,
Embedded a variety of complex methods such as compound.Among these complex methods, magnetostriction/Piezoelectric anisotropy material of lamination complex method
Material, preparation is simple, and function admirable has been widely used.The study found that magnetostriction/laminated piezoelectric composite construction
Magnetic-electric coefficient under resonance condition can get greatly enhancing, high 1-2 order of magnitude when than disresonance, so as to greatly improve
Work in sensitivity and the signal-to-noise ratio of the Magnetic Sensor under resonant state.
However, magnetostriction/laminated piezoelectric composite construction generallys use epoxyn bonding preparation, magnetostriction
Close contact mutually is needed between piezoelectric phase, is Strain-coupled between magnetostrictive layer and piezoelectric layer under this complex method,
Magnetostriction/laminated piezoelectric composite construction quality factor (Q value) depend on magnetostriction materials quality factor and piezoelectric material
The synthesis of quality factor.However, the quality factor of magnetostriction materials are usually smaller (< 100), thus limit magnetostriction/
The effective quality factor of laminated piezoelectric composite construction entirety.In addition, due to magnetostriction materials magnetoelasticity damping (with Q value at
Inverse ratio) change with the variation of bias magnetic field, so that magnetostriction/laminated piezoelectric composite construction effective quality factor also can be with
The variation in external bias magnetic field and change.
Summary of the invention
The purpose of the present invention is to provide a kind of magnetoelectricity metamaterial structure with high q-factor, can be used for the high-precision of earth's magnetic field
Degree measurement.
In order to solve the above technical problem, the present invention provides a kind of high q-factor magnetoelectricity metamaterial structures, including magnetostriction
Layer, gasket and piezo-electric resonator；The piezo-electric resonator is twin beams tuning fork structure；The two of magnetostrictive layer and piezo-electric resonator
End is connected by gasket, keeps two each vibration beams of piezo-electric resonator hanging.
Further, using epoxyn or thermocompression bonding, by the both ends of magnetostrictive layer and piezo-electric resonator with
And gasket is connected.
Further, any one material production in quartz substrate, AlN and the ZnO that the piezo-electric resonator is cut using Z
It forms.
Further, in the piezo-electric resonator, quartz tuning-fork shakes, and there are four faces for beam tool, and there are four electrodes for setting, wherein
Two be positive electrode, other two be negative electrode, the setting of positive and negative electrode interval；It is boundary with two positions that stress is close to zero
Tuning fork vibration beam is divided into three parts by point, each electrode equally includes being sequentially connected three parts connect along vibration beam length direction,
Three parts of tuning fork vibration beam are simultaneously corresponding with three parts of electrode；Meanwhile three parts of each electrode are located at vibration
On beam on three adjacent faces.
Further, it is assumed that tuning fork shake beam length be L, then two positions that stress is close to zero be respectively 0.22L at
At 0.76L.
Further, each electrode both ends lead to pad.
Further, the material with magnetostrictive effect that the magnetostrictive layer uses is Terfenol-D, FeGa conjunction
Any one in gold, FeCo alloy and Ni.
Further, the gasket is prepared using quartz crystal or ceramics.
Further, the gasket is prepared using high-permeability material.
Further, the gasket is prepared using permanent-magnet material.
Compared with prior art, the present invention its remarkable advantage is: the present invention is by the high q-factor such as quartz crystal, ZnO, AlN
Piezoelectric material is designed to the resonator structure of high q-factor, then incites somebody to action and the resonator structure is compounded to form with magnetostriction materials
Magnetostriction materials/piezo-electric resonator composite construction.In the composite construction, lead between magnetostriction materials and piezo-electric resonator
Magnetostrictive force/stress coupling is crossed, so as to which influence of the magnetostriction materials magnetoelasticity damping to piezo-electric resonator is isolated, from
And make the magnetostriction materials/piezo-electric resonator composite construction acquisition superelevation Q value.Although with traditional magnetostriction materials/pressure
Electric laminated composite structure is similar, and magnetostriction materials/piezo-electric resonator composite construction magnetic-electric coefficient also changes with external magnetic field,
But magnetostriction materials/piezo-electric resonator composite construction has high Q value, under resonance condition, magnetic-electric coefficient is with outside
The sensitivity of changes of magnetic field is exaggerated Q times, so that the high q-factor magnetoelectricity Meta Materials can realize the high-sensitivity measurement in earth's magnetic field.
Detailed description of the invention
Fig. 1 is high q-factor magnetoelectricity metamaterial structure schematic diagram of the present invention；
Fig. 2 is the typical coating schematic diagram of piezoelectric quartz resonator surface electrode in high q-factor magnetoelectricity metamaterial structure；
Fig. 3 is the partial enlarged view of quartz tuning-fork electrode.
Fig. 4 is quartz tuning-fork vibration Liang Shangsan segment electrode reversion schematic diagram.
Specific embodiment
It is readily appreciated that, technical solution according to the present invention, in the case where not changing connotation of the invention, this field
Those skilled in the art can imagine the numerous embodiments of high q-factor magnetoelectricity metamaterial structure of the present invention.Therefore, in detail below
Embodiment and attached drawing are only the exemplary illustrations to technical solution of the present invention, and be not to be construed as whole of the invention or
It is considered as the limitation or restriction to technical solution of the present invention.
In conjunction with Fig. 1, high q-factor magnetoelectricity Meta Materials are mainly made of magnetostrictive layer 1, gasket 2 and piezo-electric resonator 3.Pressure
Electrical resonator 3 is the fixed twin beams tuning fork structure of both-end.Using techniques such as epoxyn or thermocompression bondings, mangneto is stretched
It contracting layer 1, gasket 2 and piezo-electric resonator 3 and is combined with each other according to mode shown in FIG. 1.That is magnetostrictive layer 1 and piezoelectricity is humorous
The surface at vibration 3 both ends of device is closely linked by gasket 2, and the area of glue-line is equal with the surface area of gasket 2, magnetostriction
Layer 1 and the middle section (i.e. vibration beam portion point) of piezo-electric resonator 3 are hanging.Magnetostriction materials and piezo-electric resonator pass through gasket 2
Compound tense, magnetostrictive layer are not that full contact is Nian Jie, and only magnetostriction materials both ends pass through with piezo-electric resonator
In conjunction with the both ends of piezo-electric resonator, middle section does not contact gasket, to substantially reduce bonded area.This is different from tradition
Magnetostriction/laminated piezoelectric composite material combination.In existing magnetostriction/laminated piezoelectric composite material structure,
Piezoelectric layer is chip type piezoelectric material, and is bonded together between magnetostriction materials and piezoelectric material with entire area, the two it
Between magnetoelectric effect generated by Strain-coupled.And in above structure of the present invention, piezoelectric material is designed to the resonator of high q-factor
Structure, and magnetostriction materials are only tightly secured together at both ends by gasket with piezo-electric resonator, pass through magnetic between each other
Contractility/stress coupling is caused, influence of the magnetostriction materials magnetoelasticity damping to piezo-electric resonator can be isolated.
Under magnetostriction effect, the magnetostrictive force that magnetostrictive layer 1 generates is transmitted to piezo-electric resonator by gasket 2
3, when resonance frequency of the frequency of external magnetic field signal close to piezo-electric resonator 3, two vibration beams of piezo-electric resonator 3 are generated
Direction of vibration is opposite, shake the symmetrical mode of oscillation of shape.Under this mode of oscillation, two vibration beam base portions (end) of tuning fork are generated
Moment of flexure and shearing force offset, twin beams tuning fork can be greatly reduced in the coupling loss of fixing end, to make the magnetostriction
Material/piezo-electric resonator composite construction magnetoelectricity Meta Materials have high q-factor.
Using to the insensitive Z cut type quartz substrate of temperature-responsive, by technical process such as photoetching, burn into sputtering electrodes,
Special electrode shape is prepared on four surfaces of the beam of tuning fork, the electricity that quartz wafer is generated due to inverse piezoelectric effect can be captured
Signal.
As shown in Fig. 2, the quartz substrate that the piezo-electric resonator 3 selects Z to cut prepares one as one of embodiment
Kind, four surfaces of tuning fork vibration beam are coated with electrode.Under the action of close to piezo-electric resonator resonance frequency magnetic field signal, pass
Two beams for being delivered to the magnetostrictive force excitation quartz tuning-fork at quartz tuning-fork resonator both ends generate that direction of vibration is opposite, vibration shape pair
The mode of oscillation of title.As shown in Figure 3, it is assumed that the length of tuning fork vibration beam is L, when tuning fork generation direction of vibration is opposite, vibration shape is symmetrical
Mode of oscillation when, near 0.22 times of tuning fork length L and 0.76 times of position, stress is close to 0.It is close to 0 with this stress
Position be separation, the vibration beam of tuning fork can be divided into three sections, then the stress distribution direction inside this three sections vibration beams occur it is anti-
Turn, so that the electric polarization inside electromagnetism Meta Materials inverts, so the vibration beam surface for extracting electric polarization generation charge
Positive and negative electrode is successively inverted at this three sections.As shown in Fig. 2, for right side vibration beam, upper section Section A-A and vibration beam lower section C-
The section C is anode G perpendicular to the electrode on Z axis face, and the face top electrode perpendicular to X-axis is cathode Vd, and shake beam middle section section B-B,
It is cathode Vd perpendicular to the electrode on Z axis face, the face top electrode perpendicular to X-axis is anode G；Wherein, the lower part of upper section Section A-A
The bottom anode G of positive G, the right part anode G of middle section section B-B and the section lower section C-C are same positive electrode successively on right side
It shakes soffit, right side and reversion above；The upper positive G of upper section Section A-A, middle section section B-B left part anode G with
And the upper positive G in the section lower section C-C be same positive electrode successively shake above beam on right side, left side and following reversion.
Similarly, in addition there are two negative electrodes successively in vibration tri- Duan Fanzhuan of Liang Shangfen.Left side shakes beam as right vibration girder construction, upper section A-
The section A and vibration beam lower section and the section C-C, are cathode Vd perpendicular to the electrode on Z axis face, are positive perpendicular to the face top electrode of X-axis
Pole G, shake beam middle section section B-B, is anode G perpendicular to the electrode on Z axis face, and the face top electrode perpendicular to X-axis is cathode Vd.It is left
On four faces of side vibration beam, equally there are three Duan Fanzhuan of two pairs of electrodes point.But vibration beam two faces opposite with right side vibration beam in left side
On, three sections of corresponding electrodes are opposite.
For the ease of the electric signal on detection quartz vibration beam surface electrode, positive and negative electrode draws positive terminal pad at both ends respectively
G and negative terminal pad Vd.Whether can be connected by the positive terminal pad G at detection vibration beam both ends, and the negative terminal pad Vd at vibration beam both ends
Between resistance value judge the manufacturing quality of surface electrode.
The magnetostrictive layer 1 is cut using the material with magnetostrictive effect, such as giant magnetostrictive material
Terfenol-D, FeGa alloy, FeCo alloy, Ni etc..
The gasket 2 can be used quartz crystal, ceramics etc. and be prepared.
Preferably, gasket 2 can be prepared using high-permeability material (giving some instances), at this time the pad of high magnetic permeability
Magnetostrictive layer can be assembled and be transmitted in environment magnetic field by piece 3, to enhance the coefficient of magnetoelectricity conversion.
Preferably, gasket 2 can be prepared using permanent-magnet material, and the gasket 3 with permanent magnetism performance can be magnetic at this time
Stretchable layer is caused to apply certain bias magnetic field, the operating point for keeping magnetostrictive layer work optimal in piezomagnetic coefficient, to obtain big
Magnetoelectricity conversion coefficient.
The piezo-electric resonator 3, in addition to this can be with using having the quartz material material of piezoelectric effect to cut
It is prepared using the high q-factor material such as AlN, ZnO.
Above-mentioned magnetoelectricity metamaterial structure, close to resonator resonance frequency magnetic field signal (HAC) under effect, magnetostriction
Material generates magnetostrictive force and is transmitted to piezo-electric resonator both ends by coupled structure, and two beams of tuning fork is motivated to generate vibration side
To opposite, the vibration symmetrical mode of oscillation of shape, the positive and negative electrode of piezo-electric resonator generates electric signal and exports (Vout).Piezo-electric resonator
Magnetic-electricity conversion coefficient (dV of the Q value up to 10000 or more, under resonant stateout/dHAC) enhanced, being amplified Q times, (Q is
The Q value of piezo-electric resonator).Due to magnetostriction materials piezomagnetic coefficient (i.e. magnetostriction coefficient with offset change change rate,
The referred to as coefficient of strain) be external bias magnetic field function (static magnetic field HDC), therefore the magnetic under dynamic magnetic field excitation-electricity conversion
Coefficient (dVout/d HAC) it is also external bias magnetic field (HDC) function, due to the high q-factor of piezo-electric resonator, magnetic-electricity conversion system
Number (dVout/dHAC) amplification enhancing is also obtained to the sensitivity of bias magnetic field, static or quasi-static magnetic field can be realized using the characteristic
High-sensitivity measurement.
Claims (10)
1. high q-factor magnetoelectricity metamaterial structure, which is characterized in that including magnetostrictive layer, gasket and piezo-electric resonator；The pressure
Electrical resonator is twin beams tuning fork structure；The both ends of magnetostrictive layer and piezo-electric resonator are connected by gasket, make piezo-electric resonator
Two vibration beams it is hanging.
2. high q-factor magnetoelectricity metamaterial structure as described in claim 1, which is characterized in that use epoxyn or hot pressing
Bonding, the both ends and gasket of magnetostrictive layer and piezo-electric resonator are connected.
3. high q-factor magnetoelectricity metamaterial structure as described in claim 1, which is characterized in that the stone that the piezo-electric resonator is cut using Z
Any one material in English substrate, AlN and ZnO is made.
4. high q-factor magnetoelectricity metamaterial structure as described in claim 1, which is characterized in that in the piezo-electric resonator, tuning fork vibration beam
Tool is arranged there are four electrode there are four face, two of them be positive electrode, other two be negative electrode, positive and negative electrode interval is set
It sets；Two positions being close to zero using stress are divided into three parts as separation, by tuning fork vibration beam, each electrode is along vibration beam length
Direction equally includes being sequentially connected three parts connect, and three parts of tuning fork vibration beam are corresponding with three parts of electrode；Together
When, three parts of each electrode are located on three faces adjacent on vibration beam.
5. high q-factor magnetoelectricity metamaterial structure as claimed in claim 4, which is characterized in that assuming that the length of tuning fork vibration beam is L, then
Two positions that stress is close to zero are respectively at 0.22L and at 0.76L.
6. high q-factor magnetoelectricity metamaterial structure as claimed in claim 4, which is characterized in that each electrode both ends lead to pad.
7. high q-factor magnetoelectricity metamaterial structure as described in claim 1, which is characterized in that the magnetostrictive layer used has
The material of magnetostrictive effect is any one in Terfenol-D, FeGa alloy, FeCo alloy and Ni.
8. high q-factor magnetoelectricity metamaterial structure as described in claim 1, which is characterized in that the gasket using quartz crystal or
Ceramics are prepared.
9. high q-factor magnetoelectricity metamaterial structure as described in claim 1, which is characterized in that the gasket uses high-permeability material
It is prepared.
10. high q-factor magnetoelectricity metamaterial structure as described in claim 1, which is characterized in that the gasket is prepared using permanent-magnet material
It forms.
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Cited By (2)
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| CN110907681A (en) * | 2019-11-18 | 2020-03-24 | 南京理工大学 | Differential resonant voltage sensor compounded by quartz tuning fork and piezoelectric bimorph |
| CN116487866A (en) * | 2023-05-06 | 2023-07-25 | 电子科技大学 | Magneto-electric mechanical antenna for ultra-low frequency communication system and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110907681A (en) * | 2019-11-18 | 2020-03-24 | 南京理工大学 | Differential resonant voltage sensor compounded by quartz tuning fork and piezoelectric bimorph |
| CN116487866A (en) * | 2023-05-06 | 2023-07-25 | 电子科技大学 | Magneto-electric mechanical antenna for ultra-low frequency communication system and preparation method thereof |
| CN116487866B (en) * | 2023-05-06 | 2024-04-26 | 电子科技大学 | Magneto-electric mechanical antenna for ultra-low frequency communication system and preparation method thereof |
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