CN110387530A - A kind of circle pot fixture and a kind of coating apparatus - Google Patents
A kind of circle pot fixture and a kind of coating apparatus Download PDFInfo
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- CN110387530A CN110387530A CN201910747796.XA CN201910747796A CN110387530A CN 110387530 A CN110387530 A CN 110387530A CN 201910747796 A CN201910747796 A CN 201910747796A CN 110387530 A CN110387530 A CN 110387530A
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- chuck body
- wafer jig
- circle
- pot
- wafer
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- 238000000576 coating method Methods 0.000 title claims abstract description 25
- 239000011248 coating agent Substances 0.000 title claims abstract description 24
- 230000007246 mechanism Effects 0.000 claims abstract description 44
- 238000009987 spinning Methods 0.000 claims abstract description 22
- 239000011148 porous material Substances 0.000 claims description 9
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 238000003032 molecular docking Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 186
- 239000010408 film Substances 0.000 description 62
- 239000000758 substrate Substances 0.000 description 28
- 229910052738 indium Inorganic materials 0.000 description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 25
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 24
- 238000000034 method Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 17
- 230000008020 evaporation Effects 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 238000001771 vacuum deposition Methods 0.000 description 10
- 238000002207 thermal evaporation Methods 0.000 description 7
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000010687 lubricating oil Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- -1 optics Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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- 238000009738 saturating Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
Abstract
The application provides a kind of round pot fixture and a kind of coating apparatus, wherein the circle pot fixture includes: rotating mechanism, circle pot clamp rail, circle pot chuck body, wafer jig and planetary rotation mechanism；The centripetal side of the circle pot chuck body is equipped with the wafer jig, and the circle pot chuck body is connect with the wafer jig by wafer jig bearing；When the round pot chuck body revolution is with rotation, the circle pot chuck body drives the wafer jig to carry out the spinning motion opposite with the round pot chuck body sense of rotation around the wafer jig bearing by the planetary rotation mechanism.The circle pot fixture of the application can greatly improve the uniformity of wafer plated film by the spinning motion of the revolution of circle pot chuck body, rotation and wafer jig.
Description
Technical field
This application involves field of vacuum coating, and in particular to a kind of circle pot fixture and a kind of coating apparatus.
Background technique
Using relatively broad in the industries such as semiconductor, optics, coating film thickness uniformity is a kind of generally to need for vacuum coating
It asks.For example, needing to be deposited indium stibide film in wafer substrate when preparing film-type indium antimonide Hall unit, light is then used
Indium stibide film corrosion is the figure of a cross as the sensitive layer of Hall element by the method for carving corrosion.After corrosion
Cross indium antimonide sensitive layer on upper aluminum layer is deposited again as electrode, form tube core.The weight of film-type indium antimonide Hall unit
Parameter is wanted, as Hall voltage, unbalance voltage, input resistance and output resistance are related with the thickness of indium stibide film.If antimony
In uneven thickness, the then input electricity of the indium stibide film Hall element between the different location of wafer and different wafer of indium film
Resistance, output resistance, unbalance voltage and Hall voltage are different, cause the consistency of film-type indium antimonide Hall unit parameter
Difference, it is then unqualified more than certain range, cause yields to decline, while manufacturing cost increases.
By taking vacuum thermal evaporation plated film as an example, thermal evaporation sources are considered as an evaporation source or facet evaporation source, substrate distance evaporation
There is a certain distance in source, and in a vacuum, the atom or molecule being evaporated from evaporation source, most of atom or molecule can be with
The mode of linear motion deposits on substrate, needs to rotate substrate, upsets atom or molecule falls motion profile on substrate,
To obtain plated film in homogeneous thickness.The method that substrate rotation generally has Plane Rotation and planetary rotation.The structure letter of Plane Rotation method
It is single, thus it is more commonly used, but it is not readily available relatively uniform plated film.Although planetary rotation method is easy to obtain compared with Plane Rotation method
Relatively uniform plated film, but relatively high plated film is required for film thickness uniformity, though using planetary rotation, also without
Method is met the requirements.Just as the earth round the sun, although there is revolution, also there are rotation, the South Pole or the arctic of the earth and equator
Compare, obtain the irradiation intensity of sunlight be it is non-uniform, tellurian temperature is also non-uniform.Therefore, the prior art
Planetary rotation method is unable to satisfy the relatively high plated film scene of coating film thickness uniformity requirement.
Summary of the invention
The application provides a kind of round pot fixture, can not obtain more evenly plated film to solve existing planetary rotation vacuum coating
The problem of.Meanwhile the application provides a kind of coating apparatus simultaneously.
The application provides a kind of round pot fixture, comprising: circle pot chuck body, wafer jig and planetary rotation mechanism；
The centripetal side of the circle pot chuck body is equipped with the wafer jig, the circle pot chuck body and the wafer
Fixture is connected by wafer jig bearing；
When the round pot chuck body revolution is with rotation, the circle pot chuck body passes through planetary rotation mechanism band
It moves the wafer jig and carries out the spinning motion opposite with the round pot chuck body sense of rotation around the wafer jig bearing.
Optionally, the planetary rotation mechanism includes central gear and driven gear；The driven gear and the center
Gear is meshed, and when realizing the central gear rotary motion, drives the driven gear rotary motion.
Optionally, the central gear is fixed on the one of the round pot chuck body vest by the round pot fixture bearing
Side；Wherein, the bearing rod of the round pot fixture is engaged by strong slot with the central gear, to realize in the round pot fixture
When ontology carries out rotation, the central gear is driven to carry out spinning motion；
The driven gear is fixed with the wafer jig by the wafer jig bearing；Wherein, the wafer jig
Bearing rod engage by strong slot with the driven gear, with realize the central gear by described in engagement system drive from
When moving gear is rotated, the wafer jig bearing is surrounded, passes through the further band of the rotary motion of the driven gear
It moves the wafer jig and carries out spinning motion.
Optionally, the side of the round pot chuck body vest is arranged in the driven gear.
Optionally, the bearing holder (housing, cover) of the wafer jig is equipped with a big hole, sets that there are three small around the big hole
Screw hole；The docking location of the bearing holder (housing, cover) of the circle pot chuck body and the wafer jig is equipped with and the great circle pore size
Corresponding and matched big hole, and, three small sircle holes corresponding and matched with three primary screw pore sizes.
Optionally, the round pot fixture bearing and the wafer jig bearing are ceramic material.
Optionally, circular concave there are two being set on the wafer jig, described two circular concaves and the wafer clamp
Tool is concentric circles.
Optionally, notch is provided on the edge of the wafer jig, the notch is for picking and placing wafer.
Optionally, it avoids being equipped with spring pressure bar at the notch at the edge of the wafer jig.
In addition the application provides a kind of coating apparatus, comprising: rotating mechanism, circle pot clamp rail, circle pot chuck body, crystalline substance
Circle fixture and planetary rotation mechanism；
The circle pot chuck body is connect with the rotating mechanism by circle pot fixture bearing, and the circle pot fixture bearing exists
When the rotating mechanism rotates, it is able to drive the round pot chuck body and revolves on the round pot clamp rail, simultaneously
The circle pot chuck body carries out rotation around the round pot fixture bearing；
The centripetal side of the circle pot chuck body is equipped with the wafer jig, the circle pot chuck body and the wafer
Fixture is connected by wafer jig bearing；
When the round pot chuck body revolution is with rotation, the circle pot chuck body passes through planetary rotation mechanism band
It moves the wafer jig and carries out the spinning motion opposite with the round pot chuck body sense of rotation around the wafer jig bearing.
Optionally, the planetary rotation mechanism includes central gear and driven gear；The driven gear and the center
Gear is meshed, and when realizing the central gear rotary motion, drives the driven gear rotary motion.
Optionally, the central gear is fixed on the one of the round pot chuck body vest by the round pot fixture bearing
Side；Wherein, the bearing rod of the round pot fixture is engaged by strong slot with the central gear, to realize in the round pot fixture
When ontology carries out rotation, the central gear is driven to carry out spinning motion；
The driven gear is fixed with the wafer jig by the wafer jig bearing；Wherein, the wafer jig
Bearing rod engage by strong slot with the driven gear, with realize the central gear by described in engagement system drive from
When moving gear is rotated, the wafer jig bearing is surrounded, passes through the further band of the rotary motion of the driven gear
It moves the wafer jig and carries out spinning motion.
Optionally, the side of the round pot chuck body vest is arranged in the driven gear.
Optionally, the bearing holder (housing, cover) of the wafer jig is equipped with a big hole, sets that there are three small around the big hole
Screw hole；The docking location of the bearing holder (housing, cover) of the circle pot chuck body and the wafer jig is equipped with and the great circle pore size
Corresponding and matched big hole, and, three small sircle holes corresponding and matched with three primary screw pore sizes.
Optionally, the round pot fixture bearing and the wafer jig bearing are ceramic material.
Optionally, circular concave there are two being set on the wafer jig, described two circular concaves and the wafer clamp
Tool is concentric circles.
Optionally, notch is provided on the edge of the wafer jig, the notch is for picking and placing wafer.
Optionally, it avoids being equipped with spring pressure bar at the notch at the edge of the wafer jig.
Optionally, the rotating mechanism includes: rotary shaft, rotation driving lever, runing rest and handgrip；
The rotary shaft is connect with the rotation driving lever, and in rotary shaft rotation, the rotation driving lever is stirred described
Runing rest rotation；
Described handgrip one end is mounted on the runing rest；The other end of the handgrip is connected and fixed the round pot folder
Have on bearing, the round pot chuck body rotation is driven by the round pot fixture bearing in runing rest rotation to realize
Rotate into row revolution and rotation.
Compared with prior art, the application has the following advantages:
The application provides a kind of round pot fixture and a kind of coating apparatus, wherein the circle pot fixture include: rotating mechanism,
Circle pot clamp rail, circle pot chuck body, wafer jig and planetary rotation mechanism；The centripetal side of the circle pot chuck body
Equipped with the wafer jig, the circle pot chuck body is connect with the wafer jig by wafer jig bearing；In the circle
When pot chuck body revolution is with rotation, the circle pot chuck body by the planetary rotation mechanism drive wafer jig around
The wafer jig bearing carries out the spinning motion opposite with the round pot chuck body sense of rotation.The circle pot fixture of the application
By the spinning motion of the revolution of circle pot chuck body, rotation and wafer jig, the uniform of wafer plated film can be greatly improved
Property, compared with Plane Rotation and planetary rotation structure, the application reduces the strict demand to evaporation boat position.
Detailed description of the invention
Fig. 1 is indium stibide film schematic diagram in uneven thickness.
Fig. 2A is the indium stibide film erosion case schematic diagram when uneven indium stibide film etching time is shorter.
Fig. 2 B is the indium stibide film erosion case schematic diagram when uneven indium stibide film etching time is longer.
Fig. 3 is the coating apparatus structural schematic diagram of the application.
Fig. 4 is that the circle pot fixture of the application installs the schematic diagram of wafer jig.
Fig. 5 is the connection relationship and operation principle schematic diagram of the planetary rotation mechanism of the application.
Fig. 6 is the driven gear structural schematic diagram of the application.
Fig. 7 is the structural schematic diagram for the circle pot chuck body that the application is used to install planetary rotation mechanism and wafer jig.
Fig. 8 is the structural schematic diagram of the wafer jig of the application.
The first viewing angle constructions schematic diagram when Fig. 9 A is the wafer jig clamping wafer of the application.
The second viewing angle constructions schematic diagram when Fig. 9 B is the wafer jig clamping wafer of the application.
Third viewing angle constructions schematic diagram when Fig. 9 C is the wafer jig clamping wafer of the application.
Specific embodiment
Many details are explained in the following description in order to fully understand the application.But the application can be with
Much it is different from other way described herein to implement, those skilled in the art can be without prejudice to the application intension the case where
Under do similar popularization, therefore the application is not limited by following public specific implementation.
Rotation of substrate is generally divided into Plane Rotation substrate and planetary rotation substrate.Plane Rotation substrat structure is simple, so
It is more commonly used, but it is not readily available relatively uniform plated film.Therefore the higher scene of uniformity coefficient is required for plated film, generally
Without using Plane Rotation substrate, and use planetary rotation substrate.Compared to Plane Rotation substrate, planetary rotation substrate is easier
The relatively uniform plated film of thickness is obtained to need to plate using planetary rotation substrate in the relatively high occasion of plated film uniformity requirement
Film.This is main related with the mechanism of plated film, and the mechanism description of plated film is as follows.
Illustrate by taking vacuum thermal evaporation plated film as an example, thermal evaporation sources can be considered as evaporation source or facet evaporation source.
Substrate distance evaporation source has a certain distance, and in a vacuum, the atom or molecule being evaporated from evaporation source are more than in a vacuum
95% or more atom or molecule can deposit on substrate in a manner of linear motion.When Substrate Area is bigger, such as in line footpath
It on substrate more than 50mm, or is distributed on different substrates on certain space, in order in extensive substrate or different empty
Between obtain relatively uniform coating film thickness on substrate on position, generally evaporation source is placed on off-centered position, is steamed
The position risen needs to accurately calculate, and the relatively uniform plated film of thickness is obtained by rotation of substrate.Above-mentioned planetary rotation
Substrate revolves on one side when rotated just as the earth around the sun, one side rotation.Therefore, planetary rotation method is easier to obtain
The relatively uniform plated film of thickness.But when substrate dimension is bigger, and to the substrate coating film thickness one of same batch different location
Cause property requires higher scene, even if being also unable to satisfy requirement using planetary rotation.Just as the earth round the sun, although having
Revolution also has rotation, but the South Pole of the earth or the arctic, compared to equator, the irradiation intensity that the two poles of the earth obtain sunlight with equator is
Different, therefore, tellurian the two poles of the earth are also non-uniform with equator temperature.Therefore, the planetary rotation method of the prior art is not yet
Easily obtain relatively uniform plated film.
However, vacuum coating, such as thermal evaporation, electron beam, magnetron sputtering, reaction and plasma vacuum coating, it is desirable to
Film plating layer in homogeneous thickness is obtained on substrate.This is mainly due to when preparing device, film plating layer (or sedimentary) uneven thickness
The performances such as the even electricity that will affect device, optics.For example, being steamed in a piece of glass substrate using the method for Electron beam evaporation
Plate transparent indium tin oxide conductive film (ITO), if on the different location of glass ITO in uneven thickness, the different location of ITO
Square resistance and light transmitance it is different.In general, the thicker region of thickness, square resistance is smaller, light it is saturating
It is relatively low to cross rate；Conversely, thickness is than relatively thin region, square resistance is bigger, and the transmitance of light is relatively high.
For another example, antimony is deposited in the monocrystalline substrate of a piece of 4 inches of single-sided polishing using the method for thermal evaporation plated film
Change indium film, then using the method for photoetching corrosion to corrode indium stibide film is the figure of a cross as Hall element
Sensitive layer, the size of the indium antimonide cross sensitive layer after corrosion is about 0.35mm × 0.35mm, then be deposited upper aluminum layer work
For electrode, so that it may form a tube core.The size of tube core is about 0.75mm × 0.75mm, therefore in a piece of 4 inches of wafer
On can obtain about 10,000 tube cores.The important parameter of indium antimonide Hall unit, such as Hall voltage, unbalance voltage, input
Resistance and output resistance etc., it is on the one hand related with the length of indium antimonide cross sensitive layer and width, it is on the other hand also thin with indium antimonide
The thickness of film is related.If on wafer, indium stibide film it is in uneven thickness, then can significantly affect indium antimonide Hall unit
Electric property, leading to the electric property of the tube core in some regions in 10,000 tube cores is qualified, the electrical property in some regions
It can be underproof, the yields reduction of such chip, the increased costs of Hall element.
As shown in Figure 1, the thickness 102 of indium stibide film is uneven, the indium antimonide on the left of wafer on 4 inch wafers 103
Film 102 compares thick, and the indium stibide film 102 on right side is than relatively thin.During the photoetching corrosion of indium stibide film, it may appear that such as
Lower two kinds of situations: when 102 etching time of indium stibide film for being placed in 101 downside of photoresist is short, than relatively thin antimony on the right side of wafer
When indium film 102 has been corroded in place, the thicker indium stibide film 102 in left side corrodes in place not yet, the indium antimonide in left side
Tube core just becomes defective products (as shown in Figure 2 A).Alternatively, etching time is long, the thicker indium stibide film 102 in left side is eroded to
When position, right side will form undercut, and the indium antimonide tube core on right side is with regard to unqualified (as shown in Figure 2 B).
In general, in a coating process, more wafers be will be installed on fixture.For example, being in bell jar diameter
The thermal evaporation vacuum coating equipment last time of the planetary rotation frock clamp of 450mm can install 12 4 inch wafers.If a certain
Film plating layer is in uneven thickness on wafer, then in 12 wafers of the different location of frock clamp, between wafer and wafer
Indium stibide film thickness it is all uneven, in this way can to batch production lithography corrosion process bring great inconvenience.Because every
The thickness of indium stibide film is all uneven on wafer, and every wafer time used when corroding is different from, therefore just
More wafers cannot once be corroded, need to corrode one by one.If corroding the indium antimonide on more wafers, tube core simultaneously at this time
Yields can be relatively low.
Therefore, it is extremely important for semicon industry that indium stibide film in homogeneous thickness is obtained on wafer.In this regard, this Shen
A kind of coating apparatus please be provide, while the coating apparatus of the application can realize uniform coated on different wafers.It uses below
The coating apparatus of the application is described in specific embodiment.
Embodiments herein provides a kind of coating apparatus, as shown in figure 3, it is coating apparatus knot provided in this embodiment
Structure schematic diagram, described device include: round pot clamp rail 301, circle pot chuck body 302, wafer jig 308, rotating mechanism with
And planetary rotation mechanism.Wherein, the round pot chuck body 302 and the rotating mechanism are by being mounted on round pot chuck body
Circle pot fixture bearing 303 on 302 connects.When rotary shaft 304 rotates under the power effect of motor, rotation driving lever 305 is driven
Rotation, and then stir runing rest 306 and handgrip 307 is rotated, pass through circle pot fixture bearing 303 and drives circle pot chuck body
302 revolve in circle pot clamp rail 301.Meanwhile circle pot chuck body 302 revolves on circle pot clamp rail 301
While, additionally it is possible to rotation is carried out around the round pot fixture bearing 303, forms planetary rotation.It is understood that public
It is just the opposite with sense of rotation to turn direction, for example, as shown in figure 3, when circle pot chuck body 302 is on circle pot clamp rail 301
It carries out when revolution rotation counterclockwise (rotary shaft 304 rotates counterclockwise in such as Fig. 3), at this point, circle pot chuck body 302 is around circle pot
Fixture bearing 303 carries out rotation rotation clockwise.
In the present embodiment, the rotating mechanism include: rotary shaft 304, rotation driving lever 305, runing rest 306 and and
Three handgrips 307 being fixedly mounted on runing rest 306.With continued reference to Fig. 3, the rotary shaft 304 and the rotation driving lever
305 connections, meanwhile, rotary shaft 304 is located at the center that three round pot chuck bodies 302 form superstructure.The rotation
Axis 304 when extraneous powered belt moves (such as motor) rotation, stir the runing rest 306 and rotate by the rotation driving lever 305.In
After runing rest 306 rotates, the round pot fixture bearing 303 of three be respectively mounted on three handgrips 307 will drive three round pots
Chuck body 302 carries out revolution rotation on circle pot clamp rail 301, while circle pot chuck body 302 is around circle pot clamp shaft
Hold 303 carry out rotation rotations.
Why rotating mechanism is able to drive round pot chuck body 302 and carries out revolution and rotation, mainly and rotating mechanism
It is related with the circle connection type of pot chuck body 302.Specifically, 307 one end of handgrip of rotating mechanism is fixedly mounted on the rotation
Turn on bracket 306, other end is connected and fixed on round pot fixture bearing 303, can in the runing rest 306 rotation with realization
To drive round 302 rotation of pot chuck body to carry out revolution and rotation by the round pot fixture bearing 303.
Wafer jig 308 is additionally provided in the circle pot chuck body 302 of the present embodiment, wafer jig 308 is for placing
Wafer.Coating apparatus provided in this embodiment can also be while circle pot chuck body 302 rotates, and wafer jig 308 can be with
Circle pot chuck body 302 generates relative motion, to realize the uniform coated of higher degree.
Specifically, wafer jig 308 is mounted in circle pot chuck body 302.As shown in figure 4, it is circle pot fixture installation
Wafer jig schematic diagram.In the present embodiment, there are four wafer clamps for the centripetal side installation of each round pot chuck body 302
Tool 308.In the embodiment of the present application, the round pot chuck body 302 is the structure being recessed inwardly, by the round pot chuck body
The side of 302 indents is referred to as centripetal side, accordingly, the other side of the round pot chuck body 302 is referred to as vest
Side.Planetary rotation mechanism, and the round pot are provided between the circle pot chuck body 302 and the wafer jig 308
Chuck body 302 is connected with the wafer jig 308 by wafer jig bearing 309 (Fig. 4 is not shown, and shows in Fig. 3 and Fig. 5)
It connects.When the round pot chuck body 302 carries out rotation around the round pot fixture bearing 303,302 energy of circle pot chuck body
Enough four wafer jigs 308 are driven to carry out around the wafer jig bearing 309 and institute by the planetary rotation mechanism
State the opposite spinning motion in round 302 direction of rotation of pot chuck body.Using above-mentioned connection type, realize in circle pot chuck body
Relative rotation between 302 and wafer jig 308, i.e. wafer jig 308 can carry out rotation in the round pot chuck body 302
When, the spinning motion opposite with round pot 302 direction of rotation of chuck body is carried out around wafer jig bearing 309.
Above-mentioned wafer jig 308 when the round pot chuck body 302 carries out rotation, around wafer jig bearing 309 into
The principle of the capable spinning motion opposite with round pot 302 direction of rotation of chuck body, mainly be mounted on round fixture 308 and justify
Planetary rotation mechanism between pot chuck body 302 is related.In the present embodiment, planetary rotation mechanism includes central gear 310
(referring to Fig. 5) and driven gear 311 (referring to Fig. 5).In following description given, be mounted on a round pot chuck body 302 with
And it is illustrated for a set of planetary rotation mechanism on corresponding four wafer jigs 308.
As shown in figure 5, it is the connection relationship and operation principle schematic diagram of planetary rotation mechanism.In circle pot chuck body
The reverse side (side of the vest of i.e. round pot chuck body 302) of 302 clamping wafer jigs 308, is equipped with a centre tooth
Wheel 310 and four driven gears 311.Four driven gears 311 are driven in a manner of engaging with the central gear 310 to be connect
Touching, when realizing 310 rotary motion of central gear, drives 311 rotary motion of driven gear.
When the circle pot chuck body 302 carries out rotation, why it is able to drive wafer jig 308 and is rotated, in
The fixed form of heart gear 310 and circle pot chuck body 302, and, the fixed form of driven gear 311 and wafer jig 308
It is related.
In this application, central gear 310 with circle pot chuck body 302 is fixed by circle pot fixture bearing 303；
Wherein, the bearing rod of the round pot fixture is engaged by strong slot with the central gear 310, and central gear 310 is fixed
On the bearing holder (housing, cover) of circle pot fixture bearing 303, to realize when circle pot chuck body 302 carries out spinning motion, drive in described
Heart gear 310 synchronizes spinning motion.Similarly, the corresponding wafer jig 308 of driven gear 311 passes through wafer jig
Bearing 309 is fixed；Wherein, the bearing rod of the wafer jig is engaged by strong slot with driven gear 311, and by driven gear
311 are fixed on the side of round 302 vest of pot chuck body, to realize that central gear 310 drives driven tooth by engagement system
When wheel 311 is rotated, the wafer jig bearing is surrounded, is further driven to by the rotary motion of driven gear 311
The wafer jig 308 carries out spinning motion.
Specifically, central gear 310 is fixed on the bearing holder (housing, cover) of round pot fixture bearing 303.Circle pot chuck body 302 with
The bearing rod of the circle pot fixture is fixed, and can be rotated by circle pot fixture bearing 303.Similarly, from
The corresponding wafer jig 308 of moving gear 311 is fixed by wafer jig bearing 309；Wherein, the bearing of the wafer jig
Bar is engaged by strong slot with driven gear 311；Wafer jig bearing 309 passes through 3 on 309 bearing holder (housing, cover) of wafer jig bearing
Corresponding 3 through-holes on corresponding position, are bolted to round pot fixture sheet on threaded hole, and circle pot chuck body 302
On body 302.This 3 threaded holes are located on same circumference, are circumferentially uniformly distributed according to hexagonal angle degree, this circumference and wafer clamp
Has 309 concentric of bearing.Wherein, circle pot chuck body 302 on 3 through-holes diameter be slightly larger than 3 threaded holes diameter, 3
A through-hole also is located on the same circumference equal with above-mentioned circle diameter, is circumferentially uniformly distributed according to hexagonal angle degree.In circle
Pot chuck body 302 on open a through-hole on the position of the circumference concentric where 3 lead to the hole site, the diameter of this through-hole is wanted
Slightly larger than the diameter of the bearing rod of the wafer jig, facilitate the bearing rod of the wafer jig by this through-hole, and can lead to
Bearing arrangement is crossed to be rotated freely.By above structure, 309 bearing holder (housing, cover) of wafer jig bearing is fixed on round pot chuck body
On 302, by wafer jig bearing 309, the bearing rod rotation of wafer jig, wafer jig are driven when driven gear 311 rotates
Bearing rod drive wafer jig 308 to be rotated again.
Circle pot chuck body 302 itself has a rotation when carrying out revolution rotation on circle pot clamp rail 301.Circle
When pot 302 rotation of chuck body, 309 bearing holder (housing, cover) of wafer jig bearing also can be around the center of circle pot chuck body 302 i.e. circle pot
Fixture bearing 303 is rotated, and 309 bearing holder (housing, cover) of wafer jig bearing surrounds circle pot fixture bearing 303 and forms a circular motion,
The central gear 310 being fixed on round 303 bearing holder (housing, cover) of pot fixture bearing drives driven gear 311 to form rotation by engagement system
Movement realizes that wafer jig 308 surrounds the rotary motion of circle pot fixture bearing 303.
More specifically, being by one number of teeth of the circle installation of pot fixture bearing 303 on circle 302 center of pot chuck body
The central gear 310 that modulus is 3, the number of teeth is 34, wherein central gear 310 is the bearing holder (housing, cover) for being fixed on round pot fixture bearing 303
On.When circle 302 rotation of pot chuck body, central gear 310 rotate with angular speed also with circle pot chuck body 302 and be transported
It is dynamic.Accordingly, on each wafer jig 308, a wafer jig bearing 309 is installed, the wafer clamp with rectangular configuration
Bearing rod one end of tool welds together with wafer jig 308, and one end passes through the through-hole opened in circle pot chuck body 302, with mould
Number is 3, the driven gear 311 that the number of teeth is 28 connection (as shown in Figure 6), and is bolted.It wherein, can from Fig. 6
Out, the pore structure at 311 center of driven gear is matched with the rectangular configuration of the bearing rod of wafer jig.It is connected by above structure
Afterwards, it is interlocked in a manner of engaging with central gear 310 with the co-axially fixed driven gear 311 of wafer jig 308.Cause
This, when circle pot chuck body 302 circle pot track 301 on carry out planetary rotation when, central gear 310 will drive it is each from
Moving gear 311 is rotated, and realizes that wafer jig 308 surrounds the rotary motion of wafer jig bearing 309.In this way on rotating device
It there is three kinds of motion profiles, i.e., revolution, rotation and the rotation of wafer jig 308 of round pot chuck body 302.Therefore, originally
The coating apparatus of application, which is based on " three rotations " movement, can obtain the very high thin film coating of uniformity coefficient.
Further, as shown in fig. 7, it is the circle pot fixture sheet for installing planetary rotation mechanism Yu wafer jig 308
The structural schematic diagram of body 302.4 wafer jigs 308 are installed in the centripetal side of each round pot chuck body 302, the one of vest
Side is installed by planetary rotation mechanism.Having 3 120 ° equally distributed 3 threaded holes on wafer jig bearing holder (housing, cover), (correspondence is three small
Screw hole).Accordingly, there are 3 through-holes corresponding with 3 threaded holes on corresponding position in circle pot chuck body 302,
In, the diameter of 3 through-holes in circle pot chuck body 302 is slightly larger than the diameter of 3 threaded holes, and 3 through-holes also are located at same circle
Zhou Shang is circumferentially uniformly distributed according to hexagonal angle degree.Circle pot chuck body 302 on 3 lead to the hole site where circumference
A through-hole is opened on the position of concentric, the diameter of this through-hole is larger than the diameter of the bearing rod of the wafer jig, convenient
The bearing rod of the wafer jig can be rotated freely by this through-hole by bearing arrangement.Therefore, pass through bolt
Wafer jig bearing holder (housing, cover), wafer jig 308 and circle pot chuck body 302 can be fixed together.More specifically, wafer jig
Rectangular shaft on bearing 309 can pass through 3 through-holes in circle pot chuck body 302 round large through-hole and driven gear
The rectangular shaped slot at 311 centers, blending bolt are fixed.It realizes and drives wafer jig bearing 309 when driven gear 311 rotates, in turn
Wafer jig 308 is driven to rotate.Due to central gear 310 and 311 direction of rotation of driven gear on the contrary, and central gear 310 with
Circle 302 direction of rotation of pot chuck body is identical, and driven gear 311 is identical as 308 direction of rotation of wafer jig.Therefore, circle pot
Chuck body 302 is opposite with 308 direction of rotation of wafer jig.
Further, since needing to be heated to coating apparatus 100~200 DEG C, and evaporation source will during vacuum coating
Be evaporated object heating, can also generate heat, thus circle pot chuck body 302 and the temperature of wafer jig 308 can reach 100~
200 DEG C or more.Being mentioned in each round pot chuck body 302 in the foregoing description has central gear 310 and 4 driven gear
311, it needs to realize rotary motion by bearing.Therefore, it is intended that bearing is required to need resistance to 200~300 DEG C of high temperature, and
Lubricating oil cannot be used (mainly since in vacuum coating, general bearing oil is unbearable 200~300 DEG C
High temperature, lubricating oil can evaporate at this temperature, and in addition lubricating oil, which is evaporated, can pollute Coating Materials).It can using ceramic bearing
To well solve this problem, ceramic bearing can bear 200 DEG C or so of high temperature, and not need lubricating oil.Therefore, originally
The circle pot fixture bearing 303 and wafer jig bearing 309 of application are ceramic material.
Meanwhile in the application, using stainless steel material as wafer jig.The structure of wafer jig is as shown in figure 8, in crystalline substance
Circle fixture opens a notch 312 on one side, facilitates pick-and-place wafer.The position for avoiding notch 312 is uniform on the periphery of wafer jig
Assembly 3 are furnished with the compression bar 313 of spring, and the center of compression bar 313 can move up and down and be rotated left and right by the aperture on fixture.
It should be noted that the length of the side of the compression bar equipped with spring cannot be too long, interference otherwise can be generated with circle pot fixture or is rubbed
It wipes.In addition, there are two circular seam allowances for installing wafer for tool on wafer jig.The two round seam allowances and stainless steel are brilliant
Circle fixture is concentric circles.314 internal diameter of great circle is 1mm or more bigger than the outer diameter of wafer, such as the outer diameter of 4 inches of wafer is 100mm,
The internal diameter of so 314 seam allowance of great circle should be 101~102mm, and 4 inches of wafer can be put into 314 seam allowance of great circle by guarantee.Together
The depth of 314 seam allowance of Shi great Yuan than wafer thickness more than 0.2mm or so, such as wafer with a thickness of 0.5mm, then great circle 314 is stopped
The depth of mouth is 0.7mm.The internal diameter of 315 seam allowance of roundlet is 10mm smaller or so than the outer diameter of wafer, and such as 4 inches of wafer outer diameter is
100mm, then the internal diameter of 315 seam allowance of roundlet is 90mm or so.The depth of 315 seam allowance of roundlet counts sinking from big round seam allowance plane
0.5mm or so.To guarantee to place the wafer in 314 seam allowance of great circle, 3 compression bars 313 with spring are rotated, so that compression bar 313
Head pressure on the surface of the wafer, wafer can be fixed on wafer jig, and when wafer is placed downwards will not fall down.
For example, the first visual angle, the second view as shown in Fig. 9 A, Fig. 9 B and Fig. 9 C, when being the wafer jig clamping wafer of the application
Angle and third viewing angle constructions schematic diagram.Wherein, in figure 9 a, visual angle is the oblique view of 316 one side of wafer upward；In Fig. 9 B
In, visual angle is 316 one side oblique view directed downwardly of wafer；In Fig. 9 C, visual angle is the side view right above wafer 316 faces.
It is above-mentioned that 315 seam allowance of roundlet is set on wafer jig, mainly since the thickness of wafer current is more and more thinner.Such as 4
The wafer of inch, thickness has the specification of 0.5mm, 0.35mm and 0.25mm, and the wafer thickness the thin, wafer more is easy to happen fragmentation.
If the flatness of wafer jig is bad, or in use because heating wafer jig generates deformation, then with 3 band springs
Compression bar 313 compress wafer when, can because the out-of-flatness of wafer jig cause wafer generate deformation so that relatively thin wafer is broken
It splits.And one roundlet seam allowance is set in the lower section of wafer, the situation of wafer deformation can be significantly improved, and reduce wafer fragmentation
Possibility.
In addition, etching Coating Materials using the method for photoetching corrosion after the thicknesses of layers consistency with a batch wafer improves
When, these batch wafers can be put into corrosive liquid, such as can once corrode 12 wafers.If different batches wafer
Thicknesses of layers is also more uniform, then can once corrode more wafers, and such as 25.Lithography corrosion process can be greatly improved in this way
Efficiency.
In the present embodiment, vapor deposition is indium stibide film, and prepares film-type indium antimonide Hall member with this thin-film material
Part.And the important parameter of this Hall element has Hall voltage, input and output resistance and unbalance voltage.Film-type indium antimonide is suddenly
You have 4 pins by element, are wherein a pair of of pin in X-direction, and Y-direction is a pair of of pin, and due to symmetry, these two pair pin can
To exchange, so every kind of parameter is required to the two values of X and Y-direction, amounts to and need 6 numerical value, as long as a wherein numerical value
It is not able to satisfy the qualified threshold value of product, then determines that this parameter is unqualified.And any parameter is unqualified, then determines that Hall element does not conform to
Lattice.
And indium antimonide film thickness uniformity improves, and the imbalance electricity of film-type indium antimonide Hall unit can be effectively reduced
Press Vos.Unbalance voltage Vos mainly reflects the precision of film-type indium antimonide Hall unit technique production, such as cross-type antimony
The uniformity of the long and wide symmetry up and down of indium sensitive layer and thicknesses of layers.Long and wide upper of indium antimonide sensitive layer
What the symmetry of lower left and right reflected is the accuracy of photoetching overlay alignment, and the uniformity reflection of thicknesses of layers is coating film thickness
Uniformity.If thicknesses of layers be it is non-uniform, influence whether being used interchangeably for pin, can also reduce the yield of unbalance voltage.
Unbalance voltage Vos is smaller, illustrates that craft precision is higher, and the yield rate of Hall element is higher.And use " three rotations " Vacuum Deposition
The film-type indium antimonide Hall unit of embrane method preparation, the yields of unbalance voltage Vos can achieve 98% or more.
In addition, the Hall voltage V of film-type indium antimonide Hall unitHIt is dense with component ratio, crystallinity, the impurity of indium antimonide
The parameters such as degree, cross long and wide symmetry and film thickness uniformity are related.For example, film thickness uniformity is not high,
Hall voltage can be then reduced, and influences being used interchangeably for Hall element pin, and reduces the yields of Hall element.Similarly,
If the thicknesses of layers of indium antimonide is uneven, will affect film-type indium antimonide Hall unit outputs and inputs the consistent of resistance
Property, the interchangeability variation of resistance is output and input, the yield rate of Hall element is reduced.
Abundant experimental results using above-mentioned apparatus plated film show: using " three rotations " Vacuum Coating method, being in same 4 English
The inhomogeneities of thicknesses of layers on very little wafer is less than 0.05%.In 12 4 inch wafers of the different location of same a batch vapor deposition
On, the inhomogeneities of the thicknesses of layers of any two wafer can reach 0.07%.Therefore, which can significantly improve plated film
Uniformity.Further, after film thickness uniformity improves on same wafer, the finished product of tube core after photoetching corrosion can be improved
The yield rate of rate, substantially tube core can achieve 98% or more, so as to reduce the production cost of chip.
Although the application is disclosed as above with preferred embodiment, it is not for limiting the application, any this field skill
Art personnel are not departing from spirit and scope, can make possible variation and modification, therefore the guarantor of the application
Shield range should be subject to the range that the claim of this application defined.
Claims (14)
1. a kind of circle pot fixture characterized by comprising circle pot chuck body, wafer jig and planetary rotation mechanism；
The centripetal side of the circle pot chuck body is equipped with the wafer jig, the circle pot chuck body and the wafer jig
It is connected by wafer jig bearing；
When the round pot chuck body revolution is with rotation, the circle pot chuck body drives institute by the planetary rotation mechanism
It states wafer jig and carries out the spinning motion opposite with the round pot chuck body sense of rotation around the wafer jig bearing.
2. circle pot fixture according to claim 1, which is characterized in that the planetary rotation mechanism include central gear with from
Moving gear；The driven gear is meshed with the central gear, when realizing the central gear rotary motion, described in drive
Driven gear rotary motion.
3. circle pot fixture according to claim 2, which is characterized in that the central gear passes through the round pot fixture bearing
It is fixed on the side of the round pot chuck body vest；Wherein, the bearing rod of the round pot fixture by strong slot and it is described in
The engagement of heart gear drives the central gear to carry out spinning motion to realize when the round pot chuck body carries out rotation；
The driven gear is fixed with the wafer jig by the wafer jig bearing；Wherein, the axis of the wafer jig
It holds bar and is engaged by strong slot with the driven gear, to realize that the central gear drives the driven tooth by engagement system
When wheel is rotated, the wafer jig bearing is surrounded, institute is further driven to by the rotary motion of the driven gear
It states wafer jig and carries out spinning motion.
4. circle pot fixture according to claim 3, which is characterized in that the driven gear setting is in the round pot fixture sheet
The side of body vest.
5. circle pot fixture according to claim 1, which is characterized in that the bearing holder (housing, cover) of the wafer jig is equipped with one big
Circular hole, sets that there are three primary screw holes around the big hole；The bearing holder (housing, cover) of the circle pot chuck body and the wafer jig
Docking location be equipped with the corresponding and matched big hole of the great circle pore size, and, with three primary screw pore sizes
Corresponding and matched three small sircle holes.
6. circle pot fixture according to claim 1, which is characterized in that the circle pot fixture bearing and the wafer jig axis
It holds as ceramic material.
7. circle pot fixture according to claim 1, which is characterized in that round recessed there are two being set on the wafer jig
Face, described two circular concaves and the wafer jig are concentric circles.
8. circle pot fixture according to claim 1, which is characterized in that be provided with slot on the edge of the wafer jig
Mouthful, the notch is for picking and placing wafer.
9. circle pot fixture according to claim 8, which is characterized in that avoid the notch at the edge of the wafer jig
Place is equipped with spring pressure bar.
10. a kind of coating apparatus characterized by comprising rotating mechanism, circle pot clamp rail, circle pot chuck body, wafer clamp
Tool and planetary rotation mechanism；
The circle pot chuck body is connect with the rotating mechanism by circle pot fixture bearing, and the circle pot fixture bearing is described
When rotating mechanism rotates, it is able to drive the round pot chuck body and revolves on the round pot clamp rail, while is described
Circle pot chuck body carries out rotation around the round pot fixture bearing；
The centripetal side of the circle pot chuck body is equipped with the wafer jig, the circle pot chuck body and the wafer jig
It is connected by wafer jig bearing；
When the round pot chuck body revolution is with rotation, the circle pot chuck body drives institute by the planetary rotation mechanism
It states wafer jig and carries out the spinning motion opposite with the round pot chuck body sense of rotation around the wafer jig bearing.
11. device according to claim 10, which is characterized in that the planetary rotation mechanism include central gear with it is driven
Gear；The driven gear is meshed with the central gear, when realizing the central gear rotary motion, drive it is described from
Moving gear rotary motion.
12. device according to claim 11, which is characterized in that the central gear is solid by the round pot fixture bearing
It is scheduled on the side of the round pot chuck body vest；Wherein, the bearing rod of the round pot fixture passes through strong slot and the center
Gear engagement drives the central gear to carry out spinning motion to realize when the round pot chuck body carries out rotation；
The driven gear is fixed with the wafer jig by the wafer jig bearing；Wherein, the axis of the wafer jig
It holds bar and is engaged by strong slot with the driven gear, to realize that the central gear drives the driven tooth by engagement system
When wheel is rotated, the wafer jig bearing is surrounded, institute is further driven to by the rotary motion of the driven gear
It states wafer jig and carries out spinning motion.
13. device according to claim 12, which is characterized in that the driven gear setting is in the round pot chuck body
The side of vest.
14. device according to claim 10, which is characterized in that the bearing holder (housing, cover) of the wafer jig is equipped with a great circle
Hole, sets that there are three primary screw holes around the big hole；Pair of the bearing holder (housing, cover) of the circle pot chuck body and the wafer jig
Connect position be equipped with the corresponding and matched big hole of the great circle pore size, and, with three primary screw pore sizes pair
It should be with matched three small sircle holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910747796.XA CN110387530A (en) | 2019-08-14 | 2019-08-14 | A kind of circle pot fixture and a kind of coating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910747796.XA CN110387530A (en) | 2019-08-14 | 2019-08-14 | A kind of circle pot fixture and a kind of coating apparatus |
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| CN110387530A true CN110387530A (en) | 2019-10-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910747796.XA Pending CN110387530A (en) | 2019-08-14 | 2019-08-14 | A kind of circle pot fixture and a kind of coating apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115011930A (en) * | 2022-05-31 | 2022-09-06 | 北海惠科半导体科技有限公司 | Evaporation coating device |
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| JP2002217132A (en) * | 2001-01-23 | 2002-08-02 | Sony Corp | Vacuum deposition apparatus |
| WO2016052239A1 (en) * | 2014-09-29 | 2016-04-07 | 株式会社アルバック | Film deposition system |
| KR101646698B1 (en) * | 2015-02-25 | 2016-08-08 | (주)보림시스템 | Zig System for Revolving and Rotating in PVD coating machine |
| CN210314472U (en) * | 2019-08-14 | 2020-04-14 | 南开大学 | Round pot clamp and film coating device |
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| JP2002217132A (en) * | 2001-01-23 | 2002-08-02 | Sony Corp | Vacuum deposition apparatus |
| WO2016052239A1 (en) * | 2014-09-29 | 2016-04-07 | 株式会社アルバック | Film deposition system |
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| KR101646698B1 (en) * | 2015-02-25 | 2016-08-08 | (주)보림시스템 | Zig System for Revolving and Rotating in PVD coating machine |
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