CN102534491B - Preparation device and preparation method for absorbing layer of high conversion efficiency CIGS (Copper Indium Gallium Selenium) thin film solar cell - Google Patents
Preparation device and preparation method for absorbing layer of high conversion efficiency CIGS (Copper Indium Gallium Selenium) thin film solar cell Download PDFInfo
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Abstract
The invention provides a preparation device and a preparation method for an absorbing layer of a high conversion efficiency CIGS (Copper Indium Gallium Selenium) thin film solar cell. The preparation device and the preparation method provided by the invention are characterized in that a coated workpiece (film-coated substrate) is cylindrically arranged and distributed; a sputtering target material and a Se or S evaporation source are distributed on one side of a coated surface of the workpiece; and the workpiece and the target material (including the Se or S evaporation source) are relatively rotated at high speed. The preparation device and the preparation method provided by the invention are characterized by a precise film thickness and film-forming rate control system which can be used for precisely obtaining a film layer with a stoichiometric ratio of Cu, In and Ga elements approaching to a theoretical value in a sputtering technology. The device and the method provided by the invention can be used for obtaining the film of the absorbing layer with the stoichiometric ratio of all elements approaching the one of the theoretical CIGS absorbing layer, the film is easily controlled and the repeatability is greatly increased, so that the high conversion efficiency CIGS thin film solar cell can be obtained. The photoelectric conversion efficiency of the cell is increased, so that the manufacturing cost of unit electricity output of the cell and the running cost of a power plant are both reduced and the process of replacing fossil energy by solar energy is boosted.
Description
Technical field
The present invention relates to Preparation equipment of a kind of copper-indium-galliun-selenium film solar cell absorption layer and preparation method thereof, belong to technical field of solar batteries.
Copper-indium-galliun-selenium (CIGS) thin-film solar cells is the one of multi-element compounds solar cell, and it has, and transformation efficiency is high, good stability, anti-radiation performance are good, low cost and other advantages.CIGS is copper-indium-galliun-selenium film solar cell absorption layer Chemical Composition CuIn
xga
(1-x)se
2abbreviation.
As shown in Figure 1, copper-indium-galliun-selenium film solar cell is multi-layer film structure assembly, and its primary structure has: substrate (normally glass), back electrode (normally Mo), absorption layer (p-CIGS), buffer layer (normally n-CdS), transparency conducting layer (normally intrinsic ZnO and Al doping ZnO bilayer structure), top electrode (being generally Ni/Al), antireflection layer (normally MgF
2, not necessarily to have).The structure of each tunic and characteristic all will affect the performance of CIGS battery.
In copper-indium-galliun-selenium film solar cell, the quality of absorption layer is directly restricting the performance of copper-indium-galliun-selenium film solar cell, thereby the preparation technology of absorption layer is very crucial in the preparation process of battery.If each elemental composition proportioning is improper in film, may form the binary compound such as CuxSey, InxSey, also may form as CuIn
5se
8, CuIn
3se
5, Cu
3in
5se
9deng other ternary compound, or multiphase mixture, and non-required CuIn (Ga) Se
2compound.And between the electricity of CIGS compound semiconductor, optical property and energy gap width and the ratio of component of material, also having very close relationship, in CIGS rete, the stoichiometric ratio of various elements will directly affect stability and the electricity conversion of copper-indium-galliun-selenium film solar cell.
At present, the preparation technology of copper-indium-galliun-selenium film solar cell absorption layer mainly contains vacuum method and antivacuum method two classes, and wherein vacuum method mainly contains coevaporation method and preformed layer selenizing method; Adopting non-vacuum process mainly contains electrodip process, print process etc., and the current electricity conversion of CIS base battery prepared by adopting non-vacuum process route is also lower,
The CIGS based thin film solar cell of high-photoelectric transformation efficiency, by American National renewable energy source laboratory (NREL) preparation, adopts coevaporation technique in the world up to now.Coevaporation can be divided into single stage method, two-step approach and three-step approach.Single stage method is in the time that substrate temperature is 450-550 DEG C, and whole elements of composition CIGS absorption layer evaporate simultaneously.In film deposition process, adjust the vaporator rate of each element; The CIGS compound mix to obtain, stoichiometric ratio being suitable, whole process one step completes.This technique is because the processing parameter relating to is adjusted more complicated, and whole preparation process is relatively difficult to control.
What the CIGS film of the high transformation efficiency of U.S. NREL adopted is prepared by three step coevaporation techniques.The first step, in the lower situation of base reservoir temperature, (400 DEG C) evaporation In, Ga, Se form one deck In-Ga-Se initialization layer, wherein control atomic ratio In: Ga=0.7: 0.3, (In+Ga): Se=2: 3; Second step, rising base reservoir temperature to 570 DEG C, evaporation Cu, Se, its objective is for the Cu by low melting point
2-xthe characteristic that Se at high temperature has as liquid phase promotes grain growing, obtains large size and fine and close rete, this two-layer compound CIGS that is converted into rich a little copper; The 3rd step, the base reservoir temperature of maintenance second step, evaporation In, Ga, Se, make unnecessary Cu
2-xthe CIGS of the stoichiometric ratios such as Se changes into, continues evaporation a small amount of In, Ga, Se, can obtain the CIGS p-type yellow copper structure of poor a little copper, and the ratio of controlling Cu/In+Ga is in this narrow and small scope of 0.88-0.92.Sample is cooled to 400 DEG C subsequently in evaporation Se, closes Se cool to room temperature again.
Germany Wu Erte (wurth solar) also adopts coevaporation to carry out small-scale production.But coevaporation technique is difficult to realize the good film forming of large-area uniformity, and repeatability be also difficult to control, be therefore not suitable for large-scale industrialized production.The advantage of coevaporation is can obtain to mix and CIGS rete that stoichiometric ratio is suitable, and prerequisite is to want accurately to control vaporator rate and the distribution of each evaporant, and this implements more difficult for big area.
Preformed layer selenizing method key step comprises: 1) prefabricated membrane preparation technology, mainly prepares the blend films of Cu, In (Ga) alloy prefabricated membrane or Cu, In (Ga), Se by the method such as magnetron sputtering, method of evaporation.2) selenizing technique, mainly by annealing to prefabricated membrane containing (comprising selenium source and selenizing hydrogen source) under the atmosphere of selenium.Annealing temperature general control is at 400～600 DEG C.
At present the preformed layer preparation technology that adopts of institute or employing stacked structure, first do one deck copper film, then do one deck indium film (gallium film), or do one deck selenium film again, and every tunic is thick all the even thousands of nanometers of hundreds of nanometer; Adopt the sputter of CuInGa mixing material target, but because mixing material exists selectivity sputter, be difficult to realize the accurate control of each elemental composition and the mixing of atom magnitude in preformed layer.As the patent No. be ZL200510011858.9, Granted publication number for CN100413097C, Granted publication day be Augusts 20 in 2008 day, be called: the patent of " preparation method of copper-indium-galliun-selenium or copper indium gallium sulphur absorbing layer of thin film solar cell " discloses the preparation method of a kind of copper-indium-galliun-selenium or copper indium gallium sulphur solar battery obsorbing layer, adopt CuIn alloys target and CuGa alloys target, or adopt CuInGa alloys target as target, prepare the metal preformed layer of CuInGa by vacuum magnetic-control sputtering technology.Selenylation reaction or vulcanization reaction carry out in another one vacuum chamber, first selenium source or sulphur source are evenly heated up, at metal preformed layer surface evaporation last layer selenium or sulphur, irradiate heating of metal preformed layer by halogen tungsten lamp again, there is selenizing or vulcanization reaction, finally obtain copper-indium-galliun-selenium or copper indium gallium sulphur solar battery obsorbing layer.
Number of patent application is 200910006531.0, publication number is CN101740660A, within open day, be June 16 in 2010 day, be called: the Patent Application Publication of " preparation method, the equipment of copper indium gallium selenium solar cell, its absorption layer film and this film " a kind of preparation method of copper indium gallium selenium solar cell absorption layer film, the first deposited copper of the first step, indium, gallium ternary metal film, evaporation last layer selenium film forms the CIGS thin-film structure of nanometer scale again, repeats above-mentioned steps 10～50 times; Second step does short annealing processing by the CuInGaSe absorbed layer film stacking up again, obtains the polycrystalline CIGS thin-film of micron dimension.
Number of patent application is 201010118290.1, publication number is CN101789469A, open day is on July 28th, 2010, name be called: the Patent Application Publication of " preparation method of light absorption layer of Cu-In-Ga-Se-S thin film solar cell " a kind of preparation method of CIGSSe solar cell absorbing layer film, first adopt magnetron sputtering method at substrate deposition Cu film, then adopt method of evaporation deposition In-Ga film, form (the layering of Cu-In-Ga alloy film, also be alloy), again Cu-In-Ga alloy film is reacted with solid-state Se source or gaseous state H2Se source and generate copper-indium-galliun-selenium (CIGS) film, finally CIGS film is reacted with solid-state S simple substance or gaseous state H2S source and generate Cu-In-Ga-Se-S (CIGSS) light-absorption layer film.
Although preformed layer selenizing method is considered to the most effectual way that current big area is prepared copper-indium-galliun-selenium film solar cell, but the CuInGa film of preparing due to the method is stacked structure, the inner chemical composition of rete is inhomogeneous at film thickness direction, although diffusion when selenizing has weakened this ununiformity, but its existence still can make the efficiency of conversion (laboratory 14% ±) of the battery that this method manufactures lower than the efficiency of conversion (20% ±) of coevaporation method laboratory sample, and in industrial production, efficiency of conversion is just lower.
summary of the invention
The invention provides a kind of Preparation equipment scheme and corresponding preparation method of new copper-indium-galliun-selenium film solar cell absorption layer, to overcome above-mentioned coevaporation is difficult to accurately to control and large-area uniformity is bad defect and the inner chemical composition of preformed layer selenizing method rete in the inhomogeneous defect of film thickness direction.Use this scheme and method can more be leveled off to the absorption layer film of the each element chemistry of theoretical CIGS absorption layer metering ratio, and be easy to control, repeatability improves greatly, therefore obtains copper-indium-galliun-selenium (CIGS) thin-film solar cells of high-photoelectric transformation efficiency.The raising of cell photoelectric efficiency of conversion can make the manufacturing cost of battery unit's generated energy and power plant's running cost all be reduced, and can advance sun power to substitute the process of fossil energy, promotes the well-being of mankind.
The vacuum chamber of present device is divided into two vacuum areas, and wherein a side is sputtering zone, and opposite side is evaporating area.Described target is required Cu, In, the Ga element single component material of preparation CIGS absorption layer, can be also alloy material or the spliceosome of two or three element, and the quantity of target and target kind is all no less than two kinds.Described evaporation source is the preparation required Se source of CIGS absorption layer.This subregion film forming can be avoided the pollution of Se atmosphere to metal or alloy target, affects controllability, the repeatability of metal or alloy target as sputter.
One of feature of the present invention is that workpiece to be plated (plated film substrate) becomes the cylindric setting of arranging, target and Se evaporation source are distributed in workpiece by surfacing one side, relative high speed rotating between workpiece and target (comprising Se evaporation source), in the process of thicknesses of layers that completes whole absorption layer necessity, rotating cycle is greater than 500.This high speed rotating can make the each even film layer of gained CIGS mix, and is similar to coevaporation technique, and unlike the stacked structure of traditional technology." desirable " speed of rotation is the speed of a molecular layers thick rete of growing on workpiece that often rotates a circle in theory; And the speed of rotation of actual " enough high " refers to the slowest feasible economic speed, under this speed, the uneven components that institute's film forming layer causes at film thickness direction show that after selenizing result that cell photoelectric efficiency of conversion obtains compared with Reasonable Speed film forming is without obvious decline.
Relation between described workpiece and target (comprising Se evaporation source) has two kinds of designs: the first is shown in accompanying drawing 2, workpiece is in interior target (comprising Se evaporation source) mode outside, target when this mode plated film (comprising Se evaporation source) is static with respect to vacuum chamber of film coating machine, work rest is in target (comprising Se evaporation source) inner side with respect to vacuum chamber of film coating machine rotation, and this mode is applicable to the preparation of uniset glass or flexible substrates absorption layer; The second is shown in accompanying drawing 3, workpiece is the mode target (including Se evaporation source) outside, when this mode plated film, workpiece is static with respect to vacuum chamber of film coating machine, target (comprising Se evaporation source) is in workpiece inner side with respect to vacuum chamber of film coating machine rotation, and this mode is applicable to the preparation of intermittent continuous flexible substrates absorption layer.
Two of feature of the present invention is accurate film thickness monitoring systems.In spatter film forming system, power becomes reasonable linear relationship with sedimentation rate, even the linear relationship not being strict, the repeatability of its process and the stability of time are also very good, and the desirable stoichiometric ratio of therefore controlling Cu, In, Ga element by method provided by the invention in absorption layer can conveniently realize.The control of desirable absorption layer Se element is the key of Controlling System of the present invention.In the control of Se element, we have used thickness and sedimentation rate TT&C system on the work rest that we develop voluntarily, and this system probe is placed on work rest, in coating process, can measure in real time thicknesses of layers and rate of film build.Because Cu, In, Ga element use spatter film forming, be easy to control, the task of this rate of film build TT&C system is mainly used for the evaporation control of Se element, make its sedimentation rate be matched with the sedimentation rate of Cu, In, Ga element, and then obtain all desirable absorption layer films of stoichiometric ratio and homogeneity.
Use present device can realize following four kinds of CIGS absorption layer preparation technologies: the first, first obtain all desirable CuInGa preformed layers of stoichiometric ratio and homogeneity with sputtering method, take out from coating chamber, send in special vacuum selenizing stove and under the atmosphere of Se, carry out selenization; The second, first obtain all desirable CuInGa retes of stoichiometric ratio and homogeneity with sputtering method, again at method deposition one deck Se of CuInGa rete external application evaporation layer, or CuInGa is divided into several stage film forming, after the CuInGa film forming in each stage, carry out the film forming of Se element, again workpiece is taken out from coating chamber after completing at whole preformed layers, send into and in heat treatment furnace, carry out selenization; The third, be heated to proper temperature by workpiece before plated film, carries out the sputter coating of CuInGa element and the evaporation coating of Se element simultaneously, after rete has plated, then is warmed up to selenizing temperature, makes rete generation selenylation reaction, makes absorption layer; The 4th kind, workpiece is heated to proper temperature before plated film, carry out the sputter coating of CuInGa element and the evaporation coating of Se element simultaneously, after rete has plated, workpiece is taken out from coating chamber, send into and in heat treatment furnace, carry out selenization.
brief description of the drawings
Fig. 1 is the structural representation of CIGS thin-film solar cells;
Scheme one structural representation (workpiece at interior target outside) of the Preparation equipment of the copper-indium-galliun-selenium film solar cell absorption layer that Fig. 2 provides for the specific embodiment of the present invention;
Scheme two structural representations of the Preparation equipment of the copper-indium-galliun-selenium film solar cell absorption layer that Fig. 3 provides for the specific embodiment of the present invention (workpiece outside target interior);
Fig. 4 is the schematic top plan view of the scheme one actual coating equipment of Preparation equipment;
Fig. 5 is selenium take-up gear schematic diagram.
embodiment
This embodiment provides Preparation equipment of a kind of copper-indium-galliun-selenium film solar cell absorption layer and preparation method thereof, as shown in Fig. 2～Fig. 5, the Preparation equipment of copper-indium-galliun-selenium film solar cell absorption layer comprises coating equipment, described coating equipment comprises vacuum chamber 1, work rest 2, target 3 and selenium vaporizer 4, what target 3 and selenium vaporizer 4 were corresponding is arranged in vacuum chamber 1, and work rest 2 is arranged in vacuum chamber 1 and towards the sputtering zone 12 of target 3 and the evaporating area 11 of selenium vaporizer 4 for cylindric.The material of described target 3 is required Cu, In, the Ga element single component material of preparation CIGS absorption layer, can be also alloy material or the spliceosome of two or three element, and the quantity of target and target kind is all no less than two kinds.Described evaporation source is the preparation required Se source of CIGS absorption layer.This subregion film forming can be avoided the pollution of Se atmosphere to target, affects controllability, the repeatability of target as sputter.
As shown in Figure 2, be labeled as 1 be vacuum chamber, work rest 2 is concentric with vacuum chamber 1, target 3 and selenium vaporizer 4 are fixed on the inwall of vacuum chamber 1, target 3 and selenium vaporizer 4 transfixions, work rest 2 rotates.
As shown in Figure 3, be labeled as 1 be vacuum chamber, target 3 and selenium vaporizer 4 are fixed on the outer wall of a cylinder-shaped bracket 14, target 3 and selenium vaporizer 4 rotate with cylinder-shaped bracket 14, mark 7 is turning directions of cylinder-shaped bracket 14, work rest 2 is arranged on the outside of target 3 and selenium vaporizer 4, be labeled as 6 be flexible workpiece, mark 8 is flexible workpiece intermittent delivery directions.
As shown in Figure 4, be labeled as 1 be vacuum chamber, work rest 2 is concentric with vacuum chamber 1, target 3 and selenium vaporizer 4 are fixed on the inwall of vacuum chamber 1, target 3 and selenium vaporizer 4 transfixions, coating equipment comprises two molecular pumps 9, and described two molecular pumps 9 are connected with sputtering zone 12 and evaporating area 11 in vacuum chamber 1 respectively, and mark 10 is work rest turning directions.
As shown in Figure 5, selenium vaporizer 4 also comprises metal tube 6 and two electrodes 13, described metal tube 6 is connected with the outlet of selenium vaporizer 4, shut two ends of metal tube 6, on the tube wall of metal tube 6, have aperture 10, the sectional area sum of all apertures 10 is less than the sectional area that selenium vaporizer 4 exports, and the two ends of metal tube 6 are connected to electrode 13.
As shown in Figure 4, coating equipment is a vacuum chamber diameter 1680mm, the vertical box coating equipment of vacuum chamber height 1250mm.The target of coating equipment configuration and selenium evaporation source (selenium vaporizer) are distributed in the outside of rotational workpieces frame, work rest diameter 1380mm, and sputter homogeneity range scope is height 680mm, work rest rotating speed can reach 100 revs/min.
In an embodiment, use be Cu single component target, CuGa alloy target material, three kinds of targets of In single component target, target is the long direct current planar target of 998mm, target material surface is apart from workpiece surface 60mm.
It is cylindric that work rest is totally, and glass and flexible stainless steel plate that cylindrical outer surface can clamping rigidity, arrange far infrared heater inside and outside cylinder, and heating unit can make workpiece to be plated temperature be elevated to 600 degrees Celsius.
Sputtering zone is carried out vacuum insulation with Se evaporating area and (between sputtering zone and Se evaporating area, relative high vacuum region is set, reduce interactional degree between sputtering zone and Se evaporating area), two isolated areas are set, and it is that the turbomolecular pump of 3500 liters/second is bled that corresponding each isolated area has two pumping speed.
As shown in Figure 5, Se evaporating area is provided with a Se vaporizer, the direct subtend work rest of outlet of vaporizer Se while making small area sample; Need to make big area sample time, need to install in the outlet of vaporizer Se the take-up gear of a Se additional.This take-up gear main body is one section of metal tube, metal tube is connected with the outlet of vaporizer Se, metal tube end is shut, tube wall has aperture, and all aperture sectional area sums are less than the sectional area of the outlet of vaporizer Se, are connected to electrode at the two ends of metal tube, in the process of evaporation selenium, switch on to metal tube, due to the existence of metal tube resistance, metal tube can be heated, and suitably regulates electric current to make Se steam can not condense and overflow from aperture in the inner side of metal tube.
Thicknesser probe on work rest in height faces the outlet of vaporizer Se.
Can realize following four kinds of preparation methods by the Preparation equipment of above-mentioned copper-indium-galliun-selenium film solar cell absorption layer:
First method: 1. the glass that plated Mo electrode layer is packed into vacuum chamber of film coating machine (being fixed on work rest), 2. close door for vacuum chamber and vacuumize, open workpiece and rotate (2 revs/min), 3. vacuum chamber background pressure reaches 5*10
-3pa, import Ar gas (flow 800SCCM) in sputtering zone, prepare to start plated film (before plated film, workpiece rotational frequency being brought up to 100 revs/min), 4. open target by the power parameter of design in advance, observe sedimentation rate and be controlled within the scope of technological design value, 5. treat that CuInGa thicknesses of layers reaches 600nm, close target, 6. vacuum chamber inflation, workpiece is taken out from coating chamber, 7. workpiece is sent in heat treatment furnace and carried out selenization, make rete generation selenylation reaction, make absorption layer.
Second method: 1. the glass that plated Mo electrode layer is packed into vacuum chamber of film coating machine (being fixed on work rest), 2. closing door for vacuum chamber vacuumizes and heats, open workpiece and rotate (2 revs/min), 3. workpiece temperature reaches 250 degrees Celsius, and vacuum chamber background pressure reaches 5*10
-3pa, import Ar gas (flow 800SCCM) in sputtering zone, prepare to start plated film (before plated film, workpiece rotational frequency being brought up to 100 revs/min), 4. open target by the power parameter of design in advance, observe sedimentation rate and be controlled within the scope of technological design value, 5. in the time that CuInGa thicknesses of layers reaches 200nm, close target, preheating Se vaporizer, then strengthen the heating power of Se vaporizer, the Se layer of deposition ± 340nm, close Se vaporizer, 6. repeat again 4., 5. step twice, 7. vacuum chamber inflation, workpiece is taken out from coating chamber, 8. workpiece is sent into and in heat treatment furnace, carried out selenization, make rete generation selenylation reaction, make absorption layer.
The third method: 1. the glass that plated Mo electrode layer is packed into vacuum chamber of film coating machine (being fixed on work rest), 2. closing door for vacuum chamber vacuumizes and heats, open workpiece and rotate (2 revs/min), 3. workpiece temperature reaches 550 degrees Celsius, and vacuum chamber background pressure reaches 5*10
-3pa, import Ar gas (flow 800SCCM) in sputtering zone, preheating Se vaporizer, prepare to start plated film, 4. before plated film, workpiece rotational frequency is brought up to 100 revs/min, open target by the power parameter of design in advance, and strengthen the heating power of Se vaporizer, observe sedimentation rate and be controlled at that within the scope of technological design value, (sedimentation rate of CuInGa component is known in advance, under the identical sputtering power parameter of design in advance, can reproduce well this sedimentation rate, add the sedimentation rate of the Se of prior design, total be exactly the sedimentation rate of tetra-kinds of components of CuInGaSe that will obtain now), 5. treat that thickness reaches 1600nm, close target, deposit again the Se layer of 100nm, close Se vaporizer, 6. reduce rotating speed to 2 rev/min, close heating, make workpiece cool to 250 degrees Celsius, 7. vacuum chamber inflation, workpiece is taken out from coating chamber, make absorption layer.
The 4th kind of method: 1. the glass that plated Mo electrode layer is packed into vacuum chamber of film coating machine (being fixed on work rest), 2. closing door for vacuum chamber vacuumizes and heats, open workpiece and rotate (2 revs/min), 3. workpiece temperature reaches 250 degrees Celsius, and vacuum chamber background pressure reaches 5*10
-3pa, import Ar gas (flow 800SCCM) in sputtering zone, preheating Se vaporizer, prepare to start plated film, 4. before plated film, workpiece rotational frequency is brought up to 100 revs/min, open target by the power parameter of design in advance, and strengthen the heating power of Se vaporizer, observe sedimentation rate and be controlled at that within the scope of technological design value, (sedimentation rate of CuInGa component is known in advance, under the identical sputtering power parameter of design in advance, can reproduce well this sedimentation rate, add the sedimentation rate of the Se of prior design, total be exactly the sedimentation rate of tetra-kinds of components of CuInGaSe that will obtain now), 5. treat that thickness reaches 1600nm, close target, the Se layer of deposit again ± 100nm, close Se vaporizer, 6. vacuum chamber inflation, workpiece is taken out from coating chamber, 7. workpiece is sent into and in heat treatment furnace, carried out selenization, make rete generation selenylation reaction, make absorption layer.
The above; only for preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (9)
1. the Preparation equipment of a copper-indium-galliun-selenium film solar cell absorption layer, comprise coating equipment, described coating equipment comprises vacuum chamber, work rest, target and selenium vaporizer, the workpiece to be plated that it is characterized in that vacuum coating film equipment is that plated film substrate becomes the cylindric setting of arranging, target and evaporation source are distributed in workpiece by surfacing one side, relative high speed rotating between workpiece and target, in the process of thicknesses of layers that completes whole absorption layer necessity, rotating cycle is greater than 500;
Described target is to prepare the required Cu of copper-indium-galliun-selenium film solar cell absorption layer, In, Ga element single component material, or the alloy material of two or three element or spliceosome, and the kind of target and quantity are all no less than two kinds; Described evaporation source is to prepare the required Se source of copper-indium-galliun-selenium film solar cell absorption layer; The structure of described selenium evaporator outlet take-up gear is: main body is one section of metal tube, metal tube is connected with the outlet of vaporizer Se, metal tube end is shut, tube wall has aperture, and all aperture sectional area sums are less than the sectional area of the outlet of vaporizer Se, are connected to electrode at the two ends of metal tube, in the process of evaporation selenium, switch on to metal tube, due to the existence of metal tube resistance, metal tube can be heated, and suitably regulates electric current to make Se steam can not condense and overflow from aperture in the inner side of metal tube.
2. the Preparation equipment of solar battery obsorbing layer according to claim 1, it is characterized in that, described coating equipment adopts workpiece in interior target mode outside, and when this mode plated film, target is static with respect to vacuum chamber of film coating machine, and work rest rotates with respect to vacuum chamber of film coating machine in target inner side.
3. the Preparation equipment of solar battery obsorbing layer according to claim 1, it is characterized in that, described coating equipment adopts workpiece, and target is in interior mode outside, and when this mode plated film, workpiece is static with respect to vacuum chamber of film coating machine, and target rotates with respect to vacuum chamber of film coating machine in workpiece inner side.
4. the Preparation equipment of solar battery obsorbing layer according to claim 1, is characterized in that, described coating equipment uses thickness and sedimentation rate TT&C system to measure the thickness on work rest and sedimentation rate, and this system probe is placed on work rest.
5. the Preparation equipment of solar battery obsorbing layer according to claim 1, it is characterized in that, described coating equipment comprises two coating film area, wherein a side is sputtering zone, opposite side is evaporating area, sputtering zone and evaporating area are carried out vacuum insulation by high vacuum region is set, to avoid the pollution of Se to target.
6. right to use requires equipment described in 1～5 arbitrary claim to prepare the method for copper-indium-galliun-selenium film solar cell absorption layer, it is characterized in that, first obtain all desirable CuInGa preformed layers of stoichiometric ratio and homogeneity with sputtering method, take out from coating chamber, send in special vacuum selenizing stove and under the atmosphere of Se, carry out selenization.
7. right to use requires equipment described in 1～5 arbitrary claim to prepare the method for copper-indium-galliun-selenium film solar cell absorption layer, it is characterized in that, first obtain all desirable CuInGa retes of stoichiometric ratio and homogeneity with sputtering method, again at method deposition one deck Se of CuInGa rete external application evaporation layer, or CuInGa is divided into several stage film forming, after the CuInGa film forming in each stage, carry out the film forming of Se element, again workpiece is taken out from coating chamber after completing at whole preformed layers, send into and in heat treatment furnace, carry out selenization.
8. right to use requires equipment described in 1～5 arbitrary claim to prepare the method for copper-indium-galliun-selenium film solar cell absorption layer, it is characterized in that, before plated film, workpiece is heated to 550 degrees Celsius, carry out the sputter coating of CuInGa element and the evaporation coating of Se element simultaneously, when film forming, rete generation selenylation reaction, makes absorption layer.
9. right to use requires equipment described in 1～5 arbitrary claim to prepare the method for copper-indium-galliun-selenium film solar cell absorption layer, it is characterized in that, before plated film, workpiece is heated to 250 degrees Celsius, carry out the sputter coating of CuInGa element and the evaporation coating of Se element simultaneously, after rete has plated, workpiece is taken out from coating chamber, send into and in heat treatment furnace, carry out selenization.
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