CN110380696B - Variable gain low noise amplifier with broadband matching - Google Patents
Variable gain low noise amplifier with broadband matching Download PDFInfo
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- CN110380696B CN110380696B CN201910539165.9A CN201910539165A CN110380696B CN 110380696 B CN110380696 B CN 110380696B CN 201910539165 A CN201910539165 A CN 201910539165A CN 110380696 B CN110380696 B CN 110380696B
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- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 2
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- 239000013078 crystal Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention relates to the technical field of integrated circuits, in particular to a broadband matching variable gain low noise amplifier. The invention can be controlled by electric signals and flexibly adjust the gain of the low-noise amplifier. Compared with the traditional low-noise amplifier, the low-noise amplifier has the broadband impedance matching performance of the input end and the output end, and is suitable for occasions needing to process broadband radio frequency receiving signals.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a low-noise amplifier.
Background
A low noise amplifier refers to an amplifier with a very low noise figure. In the field of rf integrated circuits, a low noise amplifier is generally placed at the front end of an rf receiver and used as a pre-amplifier stage for rf signals. The low-noise amplifier amplifies radio-frequency signals and simultaneously introduces less extra noise to the amplifier so as to improve the signal-to-noise ratio of the output end of the amplifier. When the impedance matching of input and output is designed, the traditional low noise amplifier carries out single frequency point matching aiming at the central frequency point of a radio frequency signal, and is suitable for a narrow-band receiver. In a broadband radio frequency receiver, a low noise amplifier with single frequency point matching can generate signal reflection at a position far away from a central frequency point, and the signal transmission performance is deteriorated.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a broadband matching variable gain low noise amplifier. The invention can be controlled by electric signals and flexibly adjust the gain of the low-noise amplifier. Compared with the traditional low-noise amplifier, the low-noise amplifier has the broadband impedance matching performance of the input end and the output end, and is suitable for occasions needing to process broadband radio frequency receiving signals. The technical solution for realizing the purpose of the invention is as follows:
a broadband matching variable gain low noise amplifier is characterized in that the low noise amplifier comprises an INPUT terminal lumped Langerhan coupler, two single-channel low noise amplifiers and two output terminal lumped Langerhan couplers, wherein the INPUT terminal of the INPUT terminal lumped Langerhan coupler is connected with an INPUT signal INPUT, the INPUT terminal of the INPUT terminal lumped Langerhan coupler is directly connected with the INPUT terminal of a first single-channel low noise amplifier to generate a signal INI, and the coupling terminal of the INPUT terminal lumped Langerhan coupler is connected with the INPUT terminal of a second single-channel low noise amplifier to generate a signal INQ; the first single-channel low-noise amplifier outputs differential signals (OUTIP, OUTIN), and the second single-channel low-noise amplifier outputs differential signals (OUTPQ, OUTQN); the coupling end of the first output end lumped lange coupler is connected with OUTIN, the through end is connected with OUTQN, and the input end generates an output signal OUTPUTN; the coupling end of the second output terminal lumped lange coupler is connected with OUTIP, the through end is connected with OUTPQ, and the input terminal generates an output signal OUTPUT.
Furthermore, the single-channel low-noise amplifier comprises an on-chip inductor LB、LSOn-chip capacitor CBOn-chip resistor RBTransistor M11、M12、M13、M14、M21、M22Transistor array M23、M24、M25、M26And an on-chip transformer X1、X2(ii) a The single-channel low-noise amplifier has a radio-frequency signal input port IN, a radio-frequency signal output port OUTP and OUTN, and a control signal input port EN1、EN2，EN1、EN2Each is a set of control signals; on-chip inductor LBOne end of which is connected to the input signal IN and the inductor LBAnother terminal of (1) and an on-chip capacitor CBIs connected to one terminal of a capacitor CBTo another one ofTerminal and on-chip resistor RBOne terminal of (1), transistor M11Is connected to the gate of transistor M11Source electrode of (2) is connected with an inductor LSOne terminal of (1), transistor M12Source electrode of (2) is connected with an inductor LSAnother end of (1), inductance LSIs connected to ground, transistor M12Gate and resistor RBIs connected to a fixed level VB1Wherein 0 is not more than VB1VDD or less, transistor M11Drain electrode of (2) is connected with the transistor M13Source of (1), transistor M12Drain electrode of (2) is connected with the transistor M14Source of (1), transistor M13、M14Grid electrode of the grid electrode is connected with a fixed level VG1Wherein 0 is not more than VG1VDD or less, transistor M13Is connected with the transformer X1One terminal of the primary winding, transistor M14Is connected with the transformer X1The other end of the primary winding, transformer X1The middle tap of the primary coil is connected with a chip power supply VDD and a transistor M21Grid of the transformer X1One terminal of the secondary winding, transistor M22Grid of the transformer X1The other end of the secondary winding, transformer X1The center tap of the secondary coil is connected with a fixed level VB2Wherein 0 is not more than VB2VDD or less, transistor M21、M22Is grounded, and the transistor array M23、M24Source and transistor M21Are connected to each other, transistor array M25、M26Source and transistor M22Are connected to each other, transistor array M23、M26Is connected with a control signal EN1Transistor array M24、M25Is connected with a control signal EN2Transistor array M24、M25The drain electrode of the transistor array is connected with a chip power supply VDD and the transistor array M23Is connected with the transformer X2One end of the primary coil, transistor array M26Is connected with the transformer X2The other end of the primary winding, transformer X2The middle tap of the primary coil is connected with a chip power supply VDD and a transformer X2The center tap of the secondary coil is connected with a fixed level VB3Wherein 0 is not more than VB3VDD or less, transformer X2The two ends of the secondary coil are denoted as OUTP and OUTN.
Further, M is23、M24、M25、M26Each is a transistor array, where M23、M24Is a transistor array group, M25、M26Is a transistor array group; one transistor array group comprises transistors MA11、MA12、MA13、……、MA1(n-1)、MA1n、MA21、MA22、MA23、……、MA2(n-1)、MA2nWherein n represents the number of branches of the transistor array, and n is more than or equal to 1; MA (MA)11、MA12、MA13、……、MA1(n-1)、MA1nThe drains of (1) are connected together and are marked as OP; MA (MA)21、MA22、MA23、……、MA2(n-1)、MA2nThe drain electrodes of the two-way switch are connected together and connected with a chip power supply VDD; MA (MA)11、MA12、MA13、……、MA1(n-1)、MA1n、MA21、MA22、MA23、……、MA2(n-1)、MA2nThe source electrodes are connected together and are marked as IP; MA (MA)11Is connected with a control signal EN11，MA12Is connected with a control signal EN12By analogy, MA1nIs connected with a control signal EN1n；MA21Is connected with a control signal EN21，MA22Is connected with a control signal EN22By analogy, MA2nIs connected with a control signal EN2n；M23、M26Has the same structure, and comprises transistor MA11、MA12、MA13、……、MA1(n-1)、MA1nThe transistor array of (1); m24、M25Has the same structure, and comprises transistor MA21、MA22、MA23、……、MA2(n-1)、MA2nThe transistor array of (1); EN1Is a set of control signals comprising EN11、EN12、EN13、……、EN1(n-1)、EN1n；EN2Is a set of control signals comprising EN21、EN22、EN23、……、EN2(n-1)、EN2n。
Further, the transistor M11、M12、M13、M14、M21、M22Is an N-type metal oxide semiconductor field effect transistor, the transistor array M23、M24、M25、M26The transistor in (1) is also an N-type metal oxide semiconductor field effect transistor.
Further, the transistor length and the transistor width of each branch of the N-type metal oxide semiconductor field effect transistor array are equal.
Further, the transistor tube lengths of the branches of the N-type metal oxide semiconductor field effect transistor array are equal, and the tube widths are arranged in an equal ratio array with a common ratio of 2.
Compared with the prior art, the invention has the following beneficial effects: (1) the low-noise amplifier adopts a single-ended lumped Langerhan coupler at the input end and a differential lumped Langerhan coupler at the output end, so that the broadband impedance matching performance is provided for the input end and the output end of the low-noise amplifier, and the fractional bandwidth reaches more than 60 percent; (2) the invention provides the function of single-ended-differential signal conversion, the input end can be directly arranged at the front end of the radio frequency receiving chip and connected with the antenna, and the output end can provide differential signals for a post-stage circuit.
Drawings
FIG. 1 is a schematic diagram of the structure of a broadband matched variable gain low noise amplifier of the present invention;
FIG. 2(a) is a circuit schematic of the lumped Langers coupler of the broadband matched variable gain low noise amplifier of the present invention;
FIG. 2(b) shows the coupling inductance L of the lumped Langers coupler of the broadband matched variable gain low noise amplifier of the present invention1、L2The embodiment of the layout of (1);
FIG. 3 is a circuit schematic of a single channel low noise amplifier of the wide band matched variable gain low noise amplifier of the present invention;
fig. 4 is a schematic circuit diagram of an nmos fet array for a single channel lna of a wide band matched variable gain lna according to the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments, and the objects and effects of the present invention will become more apparent, it being understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention. The present invention will be described in further detail with reference to the following drawings and examples.
Fig. 1 is a schematic diagram of the structure of a broadband matching variable gain low noise amplifier according to the present invention. The low-noise amplifier provided by the invention comprises an input-end lumped Langerhans coupler, two single-channel low-noise amplifiers and two output-end lumped Langerhans couplers. The INPUT end lumped Langmg coupler decomposes an INPUT signal INPUT into two orthogonal paths INI and INQ, a first single-channel low-noise amplifier converts the INPUT signal INI into a differential signal and outputs differential signals OUTIP and OUTIN after gain adjustment, a second single-channel low-noise amplifier converts the INPUT signal INQ into a differential signal and outputs differential signals OUTPQ and OUTPIN after gain adjustment, the two sets of differential signals (OUTIP, OUTIN), (OUTPQ, OUTPIN) are connected with the two output end lumped Langmg couplers, and the two output end lumped Langmg couplers output the differential signals (OUTPUT ). The specific connection relationship is as follows: the INPUT end of the lumped lange coupler at the INPUT end, namely a, is connected with an INPUT signal INPUT, the straight-through end, namely b, is connected with the INPUT end of a first single-channel low-noise amplifier to generate a signal INI, and the coupling end, namely d, is connected with the INPUT end of a second single-channel low-noise amplifier to generate a signal INQ; the first single-channel low-noise amplifier outputs differential signals (OUTIP, OUTIN), and the second single-channel low-noise amplifier outputs differential signals (OUTPQ, OUTQN); the coupling end (d) of the first output end lumped Langerhans coupler is connected with OUTIN, the straight-through end (b) is connected with OUTQN, and the input end (a) generates an output signal OUTPUTN; the second output terminal of the lumped lange coupler has its coupled terminal d connected to OUTIP, its through terminal b connected to OUTQP, and its input terminal a generating output signal outputtp.
Fig. 2(a) is a schematic circuit diagram of a lumped lange coupler for a broadband matched variable gain low noise amplifier according to the present invention. The lumped lange coupler provided by the invention comprises an on-chip capacitor CG to ground1、CG2、CG3、CG4On-chip coupling capacitor CC1、CC2Inductance L1、L2Resistance R0The input end is a, the straight-through end is b, the isolation end is c, and the coupling end is d. Capacitor CG connected to end a1、CC1And an inductance L1One end of the capacitor CG is connected with the end c3、CC2Resistance R0And an inductance L2One end of the capacitor CG is connected to the end b2One terminal of (C), CC2And an inductance L1The other end of the capacitor (C), the end (d) is connected with a Capacitor (CG)4One terminal of (C), CC1And an inductance L2Another terminal of (C), capacitor CG1、CG2、CG3、CG4Resistance R0And the other end of the same is grounded. In the lumped lange coupler embodiment with a characteristic impedance of 50 Ω, R0The resistance is equal to 50 omega. Inductance L of lumped lange coupler1、L2Equal inductance, denoted L, coupling capacitance CC1、CC2Equal capacitance, denoted CcCapacitance to ground CG1、CG2、CG3、CG4Equal capacitance, denoted CgThe theoretical calculation formula of the three is as follows:
whereinK is L1、L2K is 0.707, Z0Is the characteristic impedance of lumped lange coupler, typically 50 Ω, ω0＝2πf0Is the center frequency f0Corresponding angular frequency.
FIG. 2(b) is a diagram of the coupling inductance L of the lumped lange coupler of the low power consumption on-chip vector modulation phase shifter according to the present invention1、L2The layout of (1). As shown, L1Corresponding ports a and b, L2The inductive coupling coefficient is approximately equal to 0.707 for ports c and d. L is1、L2The main body wiring of (1) uses a thick metal with the lowest resistivity in the production process to improve the Q value and reduce the insertion loss and the noise coefficient, and bridge parts are connected by using upper layer or lower layer metals. To achieve the design goal, the inductance L of the lumped Langer coupler1、L2The layout of (b) is not limited to the shape, the number of turns, the port position, etc. shown in embodiment 2(b), but other various forms are possible.
Fig. 3 is a circuit schematic of a single channel low noise amplifier of the wide band matched variable gain low noise amplifier of the present invention. The single-channel low-noise amplifier provided by the invention comprises an on-chip inductor LB、LSOn-chip capacitor CBOn-chip resistor RBN-type metal oxide semiconductor field effect transistor M11、M12、M13、M14、M21、M22N-type metal oxide semiconductor field effect transistor array M23、M24、M25、M26And an on-chip transformer X1、X2. The single-channel low-noise amplifier has a radio-frequency signal input port IN, a radio-frequency signal output port OUTP and OUTN, and a control signal input port EN1、EN2，EN1、EN2Each is a set of control signals. On-chip inductor LBOne end of which is connected to the input signal IN and the inductor LBAnother terminal of (1) and an on-chip capacitor CBIs connected to one terminal of a capacitor CBAnother terminal of (1) and an on-chip resistor RBOne terminal of (1), NMOS transistor M11Are connected to the gate of the crystalPipe M11Source electrode of (2) is connected with an inductor LSOne terminal of (1), transistor M12Source electrode of (2) is connected with an inductor LSAnother end of (1), inductance LSIs connected to ground, transistor M12Gate and resistor RBIs connected to a fixed level VB1Wherein 0 is not more than VB1VDD or less, transistor M11Drain electrode of (2) is connected with the transistor M13Source of (1), transistor M12Drain electrode of (2) is connected with the transistor M14Source of (1), transistor M13、M14Grid electrode of the grid electrode is connected with a fixed level VG1Wherein 0 is not more than VG1VDD or less, transistor M13Is connected with the transformer X1One terminal of the primary winding, transistor M14Is connected with the transformer X1The other end of the primary winding, transformer X1The middle tap of the primary coil is connected with a chip power supply VDD and a transistor M21Grid of the transformer X1One terminal of the secondary winding, transistor M22Grid of the transformer X1The other end of the secondary winding, transformer X1The center tap of the secondary coil is connected with a fixed level VB2Wherein 0 is not more than VB2VDD or less, transistor M21、M22Is grounded, and the transistor array M23、M24Source and transistor M21Are connected to each other, transistor array M25、M26Source and transistor M22Are connected to each other, transistor array M23、M26Is connected with a control signal EN1Transistor array M24、M25Is connected with a control signal EN2Transistor array M24、M25The drain electrode of the transistor array is connected with a chip power supply VDD and the transistor array M23Is connected with the transformer X2One end of the primary coil, transistor array M26Is connected with the transformer X2The other end of the primary winding, transformer X2The middle tap of the primary coil is connected with a chip power supply VDD and a transformer X2The center tap of the secondary coil is connected with a fixed level VB3Wherein 0 is not more than VB3VDD or less, transformer X2The two ends of the secondary coil are denoted as OUTP and OUTN.
FIG. 4 is the present inventionThe circuit schematic diagram of the N-type metal oxide semiconductor field effect transistor array of the single-channel low noise amplifier of the broadband matching variable gain low noise amplifier is disclosed. The N-type metal oxide semiconductor field effect transistor array of the single-channel low-noise amplifier comprises M23、M24、M25、M26Wherein M is23、M24Is a transistor array group, M25、M26Is a transistor array group, indicated by the dashed box. One transistor array group comprises NMOS transistors MA11、MA12、MA13、……、MA1(n-1)、MA1n、MA21、MA22、MA23、……、MA2(n-1)、MA2nWherein n represents the number of branches of the transistor array, and n is more than or equal to 1. MA (MA)11、MA12、MA13、……、MA1(n-1)、MA1nThe drains of (1) are connected together and are marked as OP; MA (MA)21、MA22、MA23、……、MA2(n-1)、MA2nThe drain electrodes of the two-way switch are connected together and connected with a chip power supply VDD; MA (MA)11、MA12、MA13、……、MA1(n-1)、MA1n、MA21、MA22、MA23、……、MA2(n-1)、MA2nAre connected together and are denoted as IP. MA (MA)11Is connected with a control signal EN11，MA12Is connected with a control signal EN12By analogy, MA1nIs connected with a control signal EN1n；MA21Is connected with a control signal EN21，MA22Is connected with a control signal EN22By analogy, MA2nIs connected with a control signal EN2n。M23、M26Has the same structure, and comprises transistor MA11、MA12、MA13、……、MA1(n-1)、MA1nThe transistor array of (1); m24、M25Has the same structure, and comprises transistor MA21、MA22、MA23、……、MA2(n-1)、MA2nCrystal of (2)An array of tubes; EN1Is a set of control signals comprising EN11、EN12、EN13、……、EN1(n-1)、EN1n；EN2Is a set of control signals comprising EN21、EN22、EN23、……、EN2(n-1)、EN2n。
The broadband matching variable gain low noise amplifier adjusts the control signal EN of the transistor array group of the single-channel low noise amplifier1、EN2The gain of the single-channel low-noise amplifier can be accurately controlled, so that the gain of the broadband matching variable-gain low-noise amplifier can be accurately controlled. The single-channel low noise amplifier uses a transistor array set, the transistors of each branch of which are the same, i.e. MA11、MA12、MA13、……、MA1(n-1)、MA1n、MA21、MA22、MA23、……、MA2(n-1)、MA2nAre identical transistors. In one possible design, the transistor lengths of each branch are the same and the widths are arranged in an equal-ratio array having a common ratio of 2, e.g. MA12The tube width is MA11Twice of, MA13The tube width is MA12Twice, and so on; MA (MA)22The tube width is MA21Twice of, MA23The tube width is MA22Twice, and so on.
The control signals of the transistor array group used by the single-channel low-noise amplifier have corresponding relation. MA (MA)11And MA21While only one is conducting, MA12And MA22While only one is conducting, MA13And MA23While only one is on, and so on, MA1nAnd MA2nWhile only one is conducting. When EN11When connected to chip power supply VDD, MA11Is turned on when EN21To chip ground, MA21Turning off; when EN21When connected to chip power supply VDD, MA21Is turned on when EN11To chip ground, MA11And (6) turning off. When EN12When the power supply VDD of the chip is connected,MA12is turned on when EN22To chip ground, MA22Turning off; when EN22When connected to chip power supply VDD, MA22Is turned on when EN12To chip ground, MA12And (6) turning off. By analogy, when EN1nWhen connected to chip power supply VDD, MA1nIs turned on when EN2nTo chip ground, MA2nTurning off; when EN2nWhen connected to chip power supply VDD, MA2nIs turned on when EN1nTo chip ground, MA1nAnd (6) turning off.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and although the invention has been described in detail with reference to the foregoing examples, it will be apparent to those skilled in the art that various changes in the form and details of the embodiments may be made and equivalents may be substituted for elements thereof. All modifications, equivalents and the like which come within the spirit and principle of the invention are intended to be included within the scope of the invention.
Claims (5)
1. A broadband matching variable gain low noise amplifier is characterized in that the low noise amplifier comprises an INPUT terminal lumped Langerhan coupler, two single-channel low noise amplifiers and two output terminal lumped Langerhan couplers, wherein the INPUT terminal of the INPUT terminal lumped Langerhan coupler is connected with an INPUT signal INPUT, the INPUT terminal of the INPUT terminal lumped Langerhan coupler is directly connected with the INPUT terminal of a first single-channel low noise amplifier to generate a signal INI, and the coupling terminal of the INPUT terminal lumped Langerhan coupler is connected with the INPUT terminal of a second single-channel low noise amplifier to generate a signal INQ; the first single-channel low-noise amplifier outputs differential signals (OUTIP, OUTIN), and the second single-channel low-noise amplifier outputs differential signals (OUTPQ, OUTQN); the coupling end of the first output end lumped lange coupler is connected with OUTIN, the through end is connected with OUTQN, and the input end generates an output signal OUTPUTN; the coupling end of the second output terminal lumped lange coupler is connected with OUTIP, the through end is connected with OUTPQ, and the input terminal generates an output signal OUTPUT;
the single-channel low-noise amplifier comprises an on-chip inductor LB、LSOn-chip capacitor CBOn-chip resistor RBTransistor M11、M12、M13、M14、M21、M22Transistor array M23、M24、M25、M26And an on-chip transformer X1、X2(ii) a The single-channel low-noise amplifier has a radio-frequency signal input port IN, a radio-frequency signal output port OUTP and OUTN, and a control signal including EN1、EN2，EN1、EN2Each is a set of control signals; on-chip inductor LBIs connected to the input port IN and the inductor LBAnother terminal of (1) and an on-chip capacitor CBIs connected to one terminal of a capacitor CBAnother terminal of (1) and an on-chip resistor RBOne terminal of (1), transistor M11Is connected to the gate of transistor M11Source electrode of (2) is connected with an inductor LSOne terminal of (1), transistor M12Source electrode of (2) is connected with an inductor LSAnother end of (1), inductance LSIs connected to ground, transistor M12Gate and resistor RBIs connected to a fixed level VB1Wherein 0 is not more than VB1VDD or less, transistor M11Drain electrode of (2) is connected with the transistor M13Source of (1), transistor M12Drain electrode of (2) is connected with the transistor M14Source of (1), transistor M13、M14Grid electrode of the grid electrode is connected with a fixed level VG1Wherein 0 is not more than VG1VDD or less, transistor M13Is connected with the transformer X1One terminal of the primary winding, transistor M14Is connected with the transformer X1The other end of the primary winding, transformer X1The middle tap of the primary coil is connected with a chip power supply VDD and a transistor M21Grid of the transformer X1One terminal of the secondary winding, transistor M22Grid of the transformer X1The other end of the secondary winding, transformer X1The center tap of the secondary coil is connected with a fixed level VB2Wherein 0 is not more than VB2VDD or less, transistor M21、M22Is grounded, and the transistor array M23、M24Source and transistor M21Are connected to each other, transistor array M25、M26Source electrode of and transistorM22Are connected to each other, transistor array M23、M26Is connected with a control signal EN1Transistor array M24、M25Is connected with a control signal EN2Transistor array M24、M25The drain electrode of the transistor array is connected with a chip power supply VDD and the transistor array M23Is connected with the transformer X2One end of the primary coil, transistor array M26Is connected with the transformer X2The other end of the primary winding, transformer X2The middle tap of the primary coil is connected with a chip power supply VDD and a transformer X2The center tap of the secondary coil is connected with a fixed level VB3Wherein 0 is not more than VB3VDD or less, transformer X2The two ends of the secondary coil are denoted as OUTP and OUTN.
2. The wideband matched variable gain low noise amplifier according to claim 1, wherein M is23、M24、M25、M26Each is a transistor array, where M23、M24Is a transistor array group, M25、M26Is a transistor array group; one transistor array group comprises transistors MA11、MA12、MA13、……、MA1(n-1)、MA1n、MA21、MA22、MA23、……、MA2(n-1)、MA2nWherein n represents the number of branches of the transistor array, and n is more than or equal to 1; MA (MA)11、MA12、MA13、……、MA1(n-1)、MA1nThe drains of (1) are connected together and are marked as OP; MA (MA)21、MA22、MA23、……、MA2(n-1)、MA2nThe drain electrodes of the two-way switch are connected together and connected with a chip power supply VDD; MA (MA)11、MA12、MA13、……、MA1(n-1)、MA1n、MA21、MA22、MA23、……、MA2(n-1)、MA2nThe source electrodes are connected together and are marked as IP; MA (MA)11Is connected with a control signal EN11，MA12Is connected with a control signal EN12By analogy, MA1nIs connected with a control signal EN1n；MA21Is connected with a control signal EN21，MA22Is connected with a control signal EN22By analogy, MA2nIs connected with a control signal EN2n；M23、M26Has the same structure, and comprises transistor MA11、MA12、MA13、……、MA1(n-1)、MA1nThe transistor array of (1); m24、M25Has the same structure, and comprises transistor MA21、MA22、MA23、……、MA2(n-1)、MA2nThe transistor array of (1); EN1Is a set of control signals comprising EN11、EN12、EN13、……、EN1(n-1)、EN1n；EN2Is a set of control signals comprising EN21、EN22、EN23、……、EN2(n-1)、EN2n。
3. The wide-band matched variable gain low noise amplifier of claim 1, wherein said transistor M is a transistor11、M12、M13、M14、M21、M22Is an N-type metal oxide semiconductor field effect transistor; the transistor array M23、M24、M25、M26Is an N-type metal oxide semiconductor field effect transistor array, wherein the transistors are also N-type metal oxide semiconductor field effect transistors.
4. The wide band matched variable gain low noise amplifier of claim 3, wherein said N-type metal oxide semiconductor field effect transistor array has equal transistor length and equal transistor width for each branch.
5. The wide band matched variable gain low noise amplifier of claim 3, wherein said N-type metal oxide semiconductor field effect transistor array has equal transistor length of each branch and equal ratio array of 2 common ratio of transistor width.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101741316A (en) * | 2009-12-24 | 2010-06-16 | 北京时代民芯科技有限公司 | Gain variable broadband radio frequency low-noise amplifier |
| CN101834567A (en) * | 2010-06-03 | 2010-09-15 | 中国人民解放军国防科学技术大学 | Broadband gain adjustable low-noise amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6469581B1 (en) * | 2001-06-08 | 2002-10-22 | Trw Inc. | HEMT-HBT doherty microwave amplifier |
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| DE10308848A1 (en) * | 2003-02-27 | 2004-09-09 | Marconi Communications Gmbh | Integrated amplifier arrangement |
| CN101425780B (en) * | 2007-11-02 | 2011-06-08 | 锐迪科科技有限公司 | Low-noise wide-band amplifier circuit |
| CN101621282A (en) * | 2009-03-06 | 2010-01-06 | 电子科技大学 | Millimeter-wave single-chip integrated low-noise amplifier (LNA) |
| US8232851B2 (en) * | 2009-03-16 | 2012-07-31 | International Business Machines Corporation | On-chip millimeter wave lange coupler |
| CN101777877A (en) * | 2010-01-05 | 2010-07-14 | 南京广嘉微电子有限公司 | Wide band radio-frequency low noise amplifier with single-ended input and differential output |
| CN101783654B (en) * | 2010-01-26 | 2012-01-25 | 浙江大学 | High-gain broadband radio-frequency low noise amplifier |
| CN104901639B (en) * | 2014-03-06 | 2019-04-30 | 苏州工业园区新国大研究院 | Microwave and millimeter wave wave band monolithic integrated power amplifier |
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|---|---|---|---|---|
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| CN101834567A (en) * | 2010-06-03 | 2010-09-15 | 中国人民解放军国防科学技术大学 | Broadband gain adjustable low-noise amplifier |
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