CN110361929B - 成型设备和制造物品的方法 - Google Patents
成型设备和制造物品的方法 Download PDFInfo
- Publication number
- CN110361929B CN110361929B CN201910286880.6A CN201910286880A CN110361929B CN 110361929 B CN110361929 B CN 110361929B CN 201910286880 A CN201910286880 A CN 201910286880A CN 110361929 B CN110361929 B CN 110361929B
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- substrate
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- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 293
- 238000000034 method Methods 0.000 claims abstract description 60
- 230000008569 process Effects 0.000 claims abstract description 52
- 238000003825 pressing Methods 0.000 claims abstract description 44
- 239000000203 mixture Substances 0.000 claims abstract description 39
- 238000000465 moulding Methods 0.000 claims abstract description 36
- 238000012545 processing Methods 0.000 claims description 8
- 230000014759 maintenance of location Effects 0.000 claims 4
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 89
- 239000007789 gas Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MSSNHSVIGIHOJA-UHFFFAOYSA-N pentafluoropropane Chemical compound FC(F)CC(F)(F)F MSSNHSVIGIHOJA-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000852 hydrogen donor Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018076246A JP7033994B2 (ja) | 2018-04-11 | 2018-04-11 | 成形装置及び物品の製造方法 |
| JP2018-076246 | 2018-04-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110361929A CN110361929A (zh) | 2019-10-22 |
| CN110361929B true CN110361929B (zh) | 2023-08-18 |
Family
ID=68161669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910286880.6A Active CN110361929B (zh) | 2018-04-11 | 2019-04-11 | 成型设备和制造物品的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11372327B2 (https=) |
| JP (1) | JP7033994B2 (https=) |
| KR (1) | KR102518784B1 (https=) |
| CN (1) | CN110361929B (https=) |
| TW (1) | TWI736863B (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6762853B2 (ja) * | 2016-11-11 | 2020-09-30 | キヤノン株式会社 | 装置、方法、及び物品製造方法 |
| JP7062049B2 (ja) * | 2018-03-30 | 2022-05-02 | 富士フイルム株式会社 | 経皮吸収シート製造用のモールド、針状凸部を有する経皮吸収シートの製造装置及び方法 |
| JP7507641B2 (ja) * | 2020-09-08 | 2024-06-28 | キヤノン株式会社 | 成形装置及び物品の製造方法 |
| US11567417B2 (en) * | 2021-01-20 | 2023-01-31 | Applied Materials, Inc. | Anti-slippery stamp landing ring |
| JP7620495B2 (ja) * | 2021-05-07 | 2025-01-23 | キヤノン株式会社 | 成形装置、および物品製造方法 |
| US12282251B2 (en) * | 2021-09-24 | 2025-04-22 | Canon Kabushiki Kaisha | Method of shaping a surface, shaping system, and method of manufacturing an article |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012004463A (ja) * | 2010-06-18 | 2012-01-05 | Canon Inc | インプリント装置、インプリント方法及びデバイスの製造方法 |
| CN106165064A (zh) * | 2014-04-09 | 2016-11-23 | 佳能株式会社 | 压印装置和物品制造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101573659A (zh) | 2005-12-08 | 2009-11-04 | 分子制模股份有限公司 | 排除位于基板和模具之间的气体的方法 |
| JP4845564B2 (ja) | 2006-03-31 | 2011-12-28 | 株式会社東芝 | パターン転写方法 |
| WO2009151560A2 (en) | 2008-06-09 | 2009-12-17 | Board Of Regents, The University Of Texas System | Adaptive nanotopography sculpting |
| JP2010067796A (ja) * | 2008-09-11 | 2010-03-25 | Canon Inc | インプリント装置 |
| NL2003380A (en) * | 2008-10-17 | 2010-04-20 | Asml Netherlands Bv | Imprint lithography apparatus and method. |
| JP5833636B2 (ja) * | 2010-04-27 | 2015-12-16 | モレキュラー・インプリンツ・インコーポレーテッド | ナノインプリント・リソグラフィのテンプレート製作方法およびそのシステム |
| JP6004738B2 (ja) | 2011-09-07 | 2016-10-12 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| JP6029494B2 (ja) | 2012-03-12 | 2016-11-24 | キヤノン株式会社 | インプリント方法およびインプリント装置、それを用いた物品の製造方法 |
| JP6120677B2 (ja) | 2013-05-27 | 2017-04-26 | キヤノン株式会社 | インプリント装置、インプリント方法および物品の製造方法 |
| KR102292465B1 (ko) | 2013-08-19 | 2021-08-20 | 보드 오브 레젼츠, 더 유니버시티 오브 텍사스 시스템 | 나노미터 스케일 정확도를 갖는 사용자 정의 프로파일의 프로그램 가능한 박막 적층 방법 |
| JP5745129B2 (ja) | 2014-04-02 | 2015-07-08 | キヤノン株式会社 | インプリント装置及びインプリント方法 |
| JP2015220299A (ja) * | 2014-05-16 | 2015-12-07 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
| JP6659104B2 (ja) * | 2014-11-11 | 2020-03-04 | キヤノン株式会社 | インプリント方法、インプリント装置、型、および物品の製造方法 |
| JP6437387B2 (ja) | 2015-05-25 | 2018-12-12 | 東芝メモリ株式会社 | 基板平坦化方法 |
| JP6647027B2 (ja) | 2015-12-03 | 2020-02-14 | キヤノン株式会社 | インプリント装置および物品製造方法 |
| US11104057B2 (en) * | 2015-12-11 | 2021-08-31 | Canon Kabushiki Kaisha | Imprint apparatus and method of imprinting a partial field |
| JP2017139268A (ja) | 2016-02-01 | 2017-08-10 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
-
2018
- 2018-04-11 JP JP2018076246A patent/JP7033994B2/ja active Active
-
2019
- 2019-03-25 TW TW108110232A patent/TWI736863B/zh active
- 2019-04-04 US US16/374,821 patent/US11372327B2/en active Active
- 2019-04-09 KR KR1020190041201A patent/KR102518784B1/ko active Active
- 2019-04-11 CN CN201910286880.6A patent/CN110361929B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012004463A (ja) * | 2010-06-18 | 2012-01-05 | Canon Inc | インプリント装置、インプリント方法及びデバイスの製造方法 |
| CN106165064A (zh) * | 2014-04-09 | 2016-11-23 | 佳能株式会社 | 压印装置和物品制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110361929A (zh) | 2019-10-22 |
| US11372327B2 (en) | 2022-06-28 |
| KR20190118972A (ko) | 2019-10-21 |
| US20190317397A1 (en) | 2019-10-17 |
| KR102518784B1 (ko) | 2023-04-07 |
| TW201943543A (zh) | 2019-11-16 |
| TWI736863B (zh) | 2021-08-21 |
| JP7033994B2 (ja) | 2022-03-11 |
| JP2019186404A (ja) | 2019-10-24 |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |