CN110340747B - Bubble-controlled micro-ultrasonic sphere emission profiling array polishing method and device - Google Patents
Bubble-controlled micro-ultrasonic sphere emission profiling array polishing method and device Download PDFInfo
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- CN110340747B CN110340747B CN201910463408.5A CN201910463408A CN110340747B CN 110340747 B CN110340747 B CN 110340747B CN 201910463408 A CN201910463408 A CN 201910463408A CN 110340747 B CN110340747 B CN 110340747B
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- 238000005498 polishing Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000227 grinding Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 19
- 230000007246 mechanism Effects 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 12
- 230000033001 locomotion Effects 0.000 claims description 11
- 239000012188 paraffin wax Substances 0.000 claims description 9
- 238000013016 damping Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- 239000002113 nanodiamond Substances 0.000 claims 1
- 238000002604 ultrasonography Methods 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 238000003754 machining Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
The invention discloses a method and a device for grinding and polishing a micro-ultrasonic sphere emission profiling array by regulating bubbles. The invention greatly improves the processing efficiency of the micro-hemispherical concave die array, and ensures the shape consistency of the concave die by a bubble regulation mode.
Description
Technical Field
The invention relates to the field of ultra-precision machining, in particular to a method and a device for polishing a micro-ultrasonic sphere emission profiling array by regulating bubbles.
Background
The hemispherical resonance gyroscope is a novel inertial sensor, has the characteristics of high precision, strong stability, high reliability and long service life, has good shock and vibration resistance and good temperature performance, and is already applied to the fields of aviation, weapons and the like. However, the machining precision of the spherical shell of the gyroscope is low, and the main reason is that the machining precision of the matrix, namely the hemispherical concave die array, is poor. The female die material has high hardness, small size and difficult processing. The existing processing method of the concave die comprises modes such as micro-cutting, micro-ultrasonic layered processing, micro-electric spark processing and the like.
To date, the reported processing methods cannot meet the requirements on the processing precision and the processing efficiency of the silicon carbide micro-hemispherical concave die. The main reasons are that: (1) when the micro-hemisphere concave die is subjected to micro-cutting machining, the conditions of crack at the bottom or the top of the micro-hemisphere and surface and subsurface damage can occur in the brittle material removing process, and the requirement on machining precision cannot be met. The processing efficiency and the yield can not be ensured. (2) In the micro ultrasonic layered machining, since a fine tool is worn and the wear cannot be predicted and controlled, it is difficult to plan a layered feeding path, resulting in poor precision of the micro hemispherical shape and low machining efficiency. (3) The micro-hemispherical concave die array processed by the micro electric discharge machining has small spot placing space, so that the precision of processing equipment is high, an electrode with extremely high shape precision is difficult to process, the abrasion is fast in the processing process, the surface quality of the processed micro-hemispherical concave die is poor, and the shape precision is low. The micro-hemisphere concave die array which meets the requirements of processing precision and quality is not reported to be developed so far.
Disclosure of Invention
The invention aims to provide a method and a device for polishing a micro-ultrasonic sphere launching profiling array by regulating bubbles aiming at the defects of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
the bubble-controlled micro-ultrasonic sphere emission profiling array polishing method comprises the following steps:
manufacturing a polishing die, wherein the polishing die comprises a tool connecting rod, the tool connecting rod comprises an upper end amplitude transformer and a lower end tool head, the end face of the tool head is plated with a hard material coating, and a micro-hemispherical female die array is processed on the hard material coating;
a ball die guide plate is arranged between the polishing die and the workpiece to be processed, the thickness of the ball die guide plate is about one fourth of the diameter of a ball to be launched, an array hole is formed in the ball die guide plate, the aperture of the array hole is larger than the diameter of the ball, the ball performs motion in the Z-axis direction or rotates along the axis of the ball, the polishing die and the workpiece to be processed perform relative motion in the XY direction through an XY workbench of a gantry bed, and the polishing die moves in the Z direction through a parallel mechanism;
and (3) filling polishing liquid containing abrasive particles and air bubbles between the polishing die and the surface of the workpiece to be processed, wherein the polishing die performs high-frequency micro ultrasonic vibration in a distance of 0 to several millimeters above the upper surface of the ball die guide plate, and the ultrasonic vibration excites the ball body and the abrasive particles to impact the surface of the workpiece to be processed at high speed to form a micro-hemispherical pit.
In order to reduce the cavitation of the material caused by long-time ultrasonic cavitation, bubbles are doped into the polishing liquid, so that the material is removed, and the precision of a processed surface is ensured.
Further, the thickness of the hard material coating in the step (1) is 10mm, and the hard material coating is diamond or tungsten carbide.
Further, the diameter of the single concave die of the micro-hemisphere concave die array in the step (1) is larger than or equal to the diameter of the emission sphere, and the diameter of the sphere ranges from 100 micrometers to 5 millimeters.
Furthermore, the number of holes on the ball mould guide plate is not less than the concave module of the polishing mould, and each micro-hemispherical concave mould on the polishing mould is provided with a hole which is corresponding to and concentric with the micro-hemispherical concave mould on the ball mould guide plate.
Furthermore, the abrasive particles in the polishing liquid are nano-scale diamond particles.
Furthermore, the ball die guide plate is fixed on a workpiece to be processed through paraffin. And the distance between the ball die guide plate and the workpiece to be processed can be determined by the thickness of the paraffin.
Further, the gas bubble content of the polishing solution in the step (3) is 3% to 7.4% of the water amount.
Further, the device for grinding and polishing the micro-ultrasonic sphere emission profiling array by bubble regulation comprises a gantry bed, a damping device, a parallel mechanism, a Z-direction micro-motion feeding mechanism, a micro-ultrasonic vibration device, a micro-ultrasonic generator, a tool connecting device, a micro-ultrasonic grinding and polishing die, a to-be-processed workpiece placing table, an X-direction workbench, a Y-direction workbench and a machine tool remote controller, wherein the damping device is arranged on two legs of the machine tool body, the Y-direction workbench is arranged at the cross bar position of the machine tool body and used for controlling the Y-direction motion of the grinding and polishing die, the parallel mechanism is arranged below the Y-direction workbench, the micro-ultrasonic vibration device is arranged at the lower end of the parallel mechanism, the micro-ultrasonic grinding and polishing die is connected with the micro-ultrasonic vibration device, the grinding and polishing die and the micro-ultrasonic vibration device synchronously vibrate, the X-direction workbench is arranged below the grinding and polishing, the workpiece to be machined is placed on the workbench, and is temporarily fixed in the workpiece to be machined placing table through paraffin.
Besides the device, the grinding and polishing system device also comprises a computer control system and a power distribution system, wherein the damping device, the Z-direction macroscopic feeding and micro-feeding mechanism, the micro-ultrasonic vibration device, the micro-ultrasonic generator, the X-direction workbench and the Y-direction workbench are all connected with the computer control system, and the adjustable micro-ultrasonic generator is connected with the power distribution system.
By adopting the technical scheme of the invention, the invention has the beneficial effects that: compared with the prior art, the method has the advantages that the high-frequency impact of the sphere and the nano-grade abrasive particles in the grinding and polishing liquid on the surface of the silicon carbide workpiece to be processed is excited through the vibration of the micro-ultrasonic grinding and polishing die, so that the material is removed. The processing efficiency of the micro-hemisphere female die array is greatly improved, and the shape consistency of the female die is ensured in a bubble regulation and control mode. The method has the advantages of high efficiency, strong controllability, high shape consistency of the hemispherical concave die, high shape precision, good surface quality and low surface roughness.
Drawings
FIG. 1 is a schematic structural diagram of a bubble-controlled micro-ultrasonic sphere-emitting profiling array polishing device of the present invention.
FIG. 2 is a schematic diagram of the bubble-controlled micro-ultrasonic sphere-emitting profiling array polishing device of the present invention.
FIG. 3 is a schematic diagram of the method and apparatus for polishing a micro-ultrasonic sphere with controlled bubbles and a launching profiling array according to the present invention.
FIG. 4 is a schematic view of the polishing mold, the ball and the guiding structure of the present invention.
FIG. 5 is a perspective view of the polishing mold, the ball and the guiding structure of the present invention.
Detailed Description
Specific embodiments of the present invention will be further described with reference to the accompanying drawings.
Referring to fig. 1 to 5, a method and a device for polishing a micro-ultrasonic sphere emission profiling array by bubble control, the method comprises the following steps:
manufacturing a grinding and polishing die 9: the lapping and polishing die 9 includes a tool linkage as shown, a hard material coating 93 (in this example a hard diamond coating), a ball die guide plate 96 (shown partially cut away), and a ball 95. The tool connecting rod comprises an amplitude transformer 91 at the upper end and a tool head 92 at the lower end, the upper end of the amplitude transformer 91 is connected with the fine ultrasonic vibration device 10, the tool head 92 is plated with a hard material coating 93 with the thickness of 5mm, in the embodiment, an aluminum oxide material is adopted, a 10 x 10 micro-hemisphere female die array 94 is processed on the coating, the radius of the female die is 0.5 mm, and the depth of the female die is also 0.5 mm. The spheres 95 are 1 mm in diameter and are of conventional plastics material, in this case ceramic material.
A ball die guide plate 96 is arranged between the grinding and polishing die 9 and the workpiece 13 to be processed, the ball die guide plate is made of aluminum alloy, and the thickness of the ball die guide plate is 0.3 mm. The ball die guide plate is bonded to the surface of the workpiece 13 to be machined by a layer of paraffin with a thickness of 0.7 mm. In the process of ultrasonic vibration, the ball die guide plate and the workpiece 13 to be processed are always kept relatively static. The ball die guide plate is provided with a 100X 100 array of holes, the diameter of each hole of the ball die guide plate is 1010 microns, and a ball body can just pass through the holes. The sphere cannot move in the x and y directions and can only move along the Z-axis direction or rotate along the sphere center of the sphere;
the method comprises the following steps of filling a polishing liquid between a polishing die 9 and the surface of a workpiece 13 to be processed, wherein the polishing liquid adopts an abrasive, a solvent and an additive according to a certain volume ratio: 5% of brightener, 5% of abrasive particles, 5% of stabilizer and dispersant, and 85% of water, wherein the abrasive particles in the polishing liquid are nano silicon nitride particles, the polishing die 9 performs high-frequency micro ultrasonic vibration in a micro distance above a workpiece 13 to be processed, and the specific vibration size is as follows: the distance between the lower edge of the coating and the upper surface of the workpiece 13 to be processed is always kept between 0 and 1.5 mm. The ultrasonic vibration excites the sphere to impact the surface of the workpiece 13 to be processed at high speed. Under the constraint action of the ball die guide, the ball body only makes impact motion continuously along the z-axis direction. Under the action of abrasive particle impact, ultrasonic cavitation and sphere emission impact, a micro-hemispherical concave die array matched with the sphere in size is processed on the surface of the silicon carbide workpiece to be processed 13.
However, the cavitation not only generates a large energy impact and greatly affects the processing precision of the concave die, but also cavitates the surface of the workpiece 13 to be processed due to the long-term cavitation, and even a hemispherical concave die cannot be effectively processed, so that the bubble control is required.
According to the cavitation bubble generation mechanism, the main mode of bubble regulation is to continuously and slowly dope air bubbles into the polishing liquid, the content of the air bubbles in the polishing liquid is 3 to 7.4 percent of the water amount, and the air amount doped in the embodiment is 7 percent of the water amount.
The bubble-regulated micro-ultrasonic sphere emission profiling array grinding and polishing method and device comprises a feeding motor 1, a connecting wire 2, a lathe bed 3, an X-direction workbench 4, a lathe bed remote controller 5, a damping device 6, a lathe foot 7, a workpiece placing table to be processed 8, a grinding and polishing die 9, a micro-ultrasonic vibration device 10, a parallel mechanism 11, a Y-direction workbench 12 and a micro-ultrasonic generator 16. The damping device 6 is arranged on the two bed legs 7, so that the influence of external vibration on the grinding and polishing of the workpiece 13 to be processed can be effectively eliminated. The Y-direction workbench is arranged at the cross bar position of the machine body and controls the Y-direction movement of the grinding and polishing die 9. The parallel mechanism 11 is mounted on the Y-direction table, and after the Y-direction position is determined, the position of the polishing mold 9 in the Z direction is adjusted by the parallel mechanism 11. The micro-ultrasonic vibration device 10 is connected below the parallel mechanism 11, the polishing mold 9 is connected with the micro-ultrasonic vibration device 10, and the polishing mold 9 and the micro-ultrasonic vibration device 10 vibrate synchronously to obtain vibration with the same frequency and amplitude as the micro-ultrasonic vibration device 10. An X-direction workbench 4 is arranged below the grinding and polishing die 9, the X-direction workbench 4 is directly positioned on a gantry bed, a workpiece placing table 8 to be processed is positioned on the workbench, the movement of the workpiece placing table 8 to be processed in the X direction in the horizontal plane can be realized through a guide rail, the workpiece to be processed is temporarily fixed in the workpiece placing table 8 to be processed through paraffin, and the workpiece to be processed can be taken out in a mode of heating and melting the paraffin after the processing is finished. The machine tool remote controller 5 is connected with a motor through a connecting wire, the motor controls the movement of the feeding device in each direction (the motor is only a schematic diagram), and the movement distance in each direction is quantitatively controlled through the remote controller.
Besides the devices, the polishing system device also comprises a computer control system 14 and a power distribution system 15, wherein the damping device 6, the Z-direction macro feeding and micro feeding mechanism, the micro ultrasonic vibration device 10, the micro ultrasonic generator, the X-direction workbench 4 and the Y-direction workbench are connected with the computer control system, and the adjustable micro ultrasonic generator is connected with the power distribution system.
In the embodiment, under the synergistic effect of the self-made micro-ultrasonic coating polishing die 9 and the parallel mechanism 11 on Z-direction feeding and ball die guiding, the analysis of the flow field and the abrasive grain field is integrated to realize high-efficiency ultra-precision polishing of the micro hemispherical concave die array.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (8)
1. The method for grinding and polishing the micro-ultrasonic sphere emission profiling array by bubble regulation is characterized by comprising the following steps:
manufacturing a polishing die, wherein the polishing die comprises a tool connecting rod, the tool connecting rod comprises an upper end amplitude transformer and a lower end tool head, the end face of the tool head is plated with a hard material coating, and a micro-hemispherical female die array is processed on the hard material coating;
a ball die guide plate is arranged between the polishing die and the workpiece to be processed, the thickness of the ball die guide plate is about one fourth of the diameter of a ball to be launched, an array hole is formed in the ball die guide plate, the aperture of the array hole is larger than the diameter of the ball, the ball performs motion in the Z-axis direction or rotates along the axis of the ball, the polishing die and the workpiece to be processed perform relative motion in the XY direction through an XY workbench of a gantry bed, and the polishing die moves in the Z direction through a parallel mechanism;
filling polishing liquid containing abrasive particles and air bubbles between a polishing die and the surface of the workpiece to be processed, wherein the polishing die does high-frequency micro ultrasonic vibration within a distance of 0-1.5 mm above the upper surface of the ball die guide plate, and the ultrasonic vibration excites the ball body and the abrasive particles to impact the surface of the workpiece to be processed at high speed to form a micro-hemispherical pit;
in order to reduce the cavitation of the material caused by long-time ultrasonic cavitation, bubbles are doped into the polishing liquid, so that the material is removed, and the precision of a processed surface is ensured.
2. The method for grinding and polishing the bubble-controlled micro-ultrasonic sphere launching profiling array according to claim 1, wherein the thickness of the hard material coating in the step (1) is 10mm, and the hard material coating is diamond or tungsten carbide.
3. The method for lapping and polishing the micro-ultrasonic sphere launching profile array with the controlled bubbles according to claim 1, wherein the diameter of the single concave die of the micro-hemispherical concave die array in the step (1) is larger than or equal to the diameter of the launching sphere, and the diameter of the sphere ranges from 100 micrometers to 5 millimeters.
4. The method for grinding and polishing the micro-ultrasonic sphere with a transmitting and copying array as claimed in claim 1, wherein the number of the holes on the guiding plate of the sphere mold is not less than the concave modulus of the grinding and polishing mold, and each micro-hemispherical concave mold on the grinding and polishing mold has a hole on the guiding plate of the sphere mold which is corresponding to and concentric with the micro-hemispherical concave mold.
5. The method for polishing the spherical launching profile modeling array of the gas bubble controlled micro-ultrasound according to claim 1, wherein the abrasive particles in the polishing liquid are nano-diamond particles.
6. The method for lapping and polishing the bubble-controlled micro-ultrasonic sphere-emitting profiling array as claimed in claim 1, wherein the ball pattern guide plate is fixed on the workpiece to be processed by paraffin, and the distance between the ball pattern guide plate and the workpiece to be processed can be determined by the thickness of the paraffin.
7. The method for polishing the micro-ultrasonic sphere launching profiling array with the regulation of air bubbles as claimed in claim 1, wherein the air bubble content of the polishing solution in the step (3) is 3% to 7.4% of the water amount.
8. The device for realizing the bubble-controlled micro-ultrasonic sphere emission profiling array polishing method of claim 1, which is characterized by comprising a gantry bed, a damping device, a parallel mechanism, a Z-direction micro-feeding mechanism, a micro-ultrasonic vibration device, a micro-ultrasonic generator, a tool connecting device, a polishing mold, a workpiece placing table to be processed, an X-direction workbench, a Y-direction workbench and a machine tool remote controller, wherein the damping device is arranged on two legs of a machine tool body, the Y-direction workbench is arranged at the cross bar position of the machine tool body to control the Y-direction movement of the polishing mold, the parallel mechanism is arranged below the Y-direction workbench, the micro-ultrasonic vibration device is arranged at the lower end of the parallel mechanism, the polishing mold is connected with the micro-ultrasonic vibration device, the polishing mold and the micro-ultrasonic vibration device vibrate synchronously, the X-direction workbench is arranged below the polishing mold, the X-direction workbench is positioned on the gantry bed, the workpiece placing table to be processed is positioned on the workbench, and the workpiece to be processed is temporarily fixed in the workpiece placing table to be processed through paraffin.
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| JPH02303724A (en) * | 1989-05-19 | 1990-12-17 | Akio Nakano | Ultrasonic machining method |
| JP2007098537A (en) * | 2005-10-06 | 2007-04-19 | Olympus Corp | Polishing method |
| CN105479275B (en) * | 2015-11-19 | 2017-12-05 | 浙江工业大学 | A kind of micro- semi-ring cavity plate array micro ultrasound classification polishing method |
| CN105364641B (en) * | 2015-11-19 | 2017-07-28 | 浙江工业大学 | Micro- semi-ring cavity plate array polishing method and device |
| CN106002500B (en) * | 2016-04-28 | 2017-12-08 | 浙江工业大学 | One kind supercharging ultrasonic cavitation three-phase abrasive Flow eddy flow polishing processing device |
| CN107378655B (en) * | 2017-07-07 | 2021-06-15 | 扬州大学 | Multi-dimensional rotary ultrasonic generating and processing mechanism and processing method thereof |
| CN107598724B (en) * | 2017-08-21 | 2019-08-13 | 常熟理工学院 | Glass mold polishing robot based on parallel institution |
| CN108581816B (en) * | 2018-04-02 | 2021-02-26 | 浙江工业大学 | Three-phase flow dynamic pressure cavitation polishing method and device |
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