CN110335731A - The manufacturing method of high voltage withstanding secondary safeguard protection element - Google Patents
The manufacturing method of high voltage withstanding secondary safeguard protection element Download PDFInfo
- Publication number
- CN110335731A CN110335731A CN201910548187.1A CN201910548187A CN110335731A CN 110335731 A CN110335731 A CN 110335731A CN 201910548187 A CN201910548187 A CN 201910548187A CN 110335731 A CN110335731 A CN 110335731A
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- protection element
- high voltage
- safeguard protection
- voltage withstanding
- manufacturing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fuses (AREA)
Abstract
The present invention relates to safeguard protection Element Technology fields, disclose a kind of manufacturing method of high voltage withstanding secondary safeguard protection element.The manufacturing method of the high voltage withstanding secondary safeguard protection element, comprising: form the chip of high voltage withstanding secondary safeguard protection element；Prepreg is pressed together on the high voltage withstanding secondary safeguard protection element chip upper and lower surface and forms laminates；Guide groove is formed in the laminates upper and lower ends, and fills tin cream in guide groove；Copper foil is pressed together on the laminates upper and lower surface；And outer-layer circuit is formed in such a way that PCB is processed on copper foil.Compared to the manufacturing method that existing plug-in type and surface weld silver-plated stent-type; the manufacturing process of high voltage withstanding secondary safeguard protection element of the invention is simpler efficiently; it is very suitable to high-volume automated production; and cost of labor and material cost are lower, improve the working efficiency of high voltage withstanding secondary safeguard protection element manufacture and reduce manufacturing cost.
Description
Technical field
The present invention relates to safeguard protection Element Technology field, more particularly to a kind of high voltage withstanding secondary safeguard protection element
Manufacturing method.
Background technique
Short circuit and overload protection demand for small-power resistance equipment and integrated circuit, start secondary peace occur in recent years
All risk insurance protection element such as high molecular positive temperature coefficient thermal sensitive resistor part (Polymeric Positive Temperature
Coefficient, PPTC) stream protection element.
The manufacture of existing secondary safeguard protection element mainly has plug-in type and surface to weld silver-plated two kinds of production works of stent-type
Skill.Plug-in type needs punching, conducting wire molding, inserted sheet, welding, impregnation, outer layer to wrap up in the processes such as epoxy resin, solidification, point resistance packaging,
Product outline size multiplicity can not form the production of automation size metaplasia, production technology complexity and high labor cost.Surface welding plating
Silver-colored stent-type material cost is high, and the degree of automation is low, is not suitable for the production needs of reality, and the product type of technique production
It is limited.
Summary of the invention
In consideration of it, the present invention provides a kind of manufacturing method of high voltage withstanding secondary safeguard protection element, solve existing secondary
The manufacture efficiency of safeguard protection element is low and cost of labor and the high technical problem of material cost.
According to one embodiment of present invention, a kind of manufacturing method of high voltage withstanding secondary safeguard protection element, packet are provided
It includes: forming high voltage withstanding secondary safeguard protection element chip；Prepreg is pressed together on the high voltage withstanding secondary safeguard protection
Element chip upper and lower surface and form laminates；Guide groove is formed in the laminates upper and lower ends, and fills tin cream in guide groove；
Copper foil is pressed together on the laminates upper and lower surface；And outer-layer circuit is formed by PCB processing method on copper foil.
Preferably, described that outer-layer circuit is formed by PCB processing method on copper foil, comprising: by copper foil and the guide groove
Interior tin cream is connected and forms pad.
It is preferably, described that be connected with tin cream in the guide groove and form pad copper foil be by exposure, development and etching
It is formed.
Preferably, after the high voltage withstanding secondary safeguard protection element chip of formation, further includes: to high voltage withstanding two
Secondary safeguard protection element chip carries out cross-linking radiation.
Preferably, the irradiation dose of the cross-linking radiation is 20 to 200KGY.
Preferably, the cross-linking radiation is carried out by Co-60.
Preferably, described that outer-layer circuit is formed by PCB processing method on copper foil, comprising: to pass through the heavy tin plating formation of copper
Outer electrode.
Preferably, the high voltage withstanding secondary safeguard protection element chip is formed by squeezing out overlay film and pressing.
Preferably, the guide groove is formed by etching.
Preferably, the manufacturing method of the high voltage withstanding secondary safeguard protection element further include: by tin cream with it is high voltage withstanding
The electrode of secondary safeguard protection element chip connects and forms extraction electrode.
The manufacturing method of high voltage withstanding secondary safeguard protection element provided by the invention, comprising: formed high voltage withstanding secondary
Safeguard protection element chip；Prepreg is pressed together on the high voltage withstanding secondary safeguard protection element chip upper and lower surface and shape
At laminates；Guide groove is formed in the laminates upper and lower ends, and fills tin cream in guide groove；Copper foil is pressed together on the stacking
Piece upper and lower surface；And outer-layer circuit is formed by PCB processing method on copper foil.It is welded compared to existing plug-in type and surface
The manufacturing method of silver-plated stent-type, the manufacturing process of high voltage withstanding secondary safeguard protection element of the invention is simpler efficiently,
It is very suitable to high-volume automated production, and cost of labor and material cost are lower, improves high voltage withstanding secondary safeguard protection
The working efficiency of element manufacture simultaneously reduces manufacturing cost.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the flow diagram of the manufacturing method of high voltage withstanding secondary safeguard protection element in the embodiment of the present invention.
Fig. 2 is the flow diagram that outer-layer circuit is formed in the embodiment of the present invention.
Specific embodiment
Further more detailed description is made to technical solution of the present invention with reference to the accompanying drawings and detailed description.It is aobvious
So, described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Based in the present invention
Embodiment, those of ordinary skill in the art's every other embodiment obtained without making creative work,
It all should belong to the scope of protection of the invention.
In the description of the present invention, it is to be understood that, term " first ", " second " etc. are used for description purposes only, without
It can be interpreted as indication or suggestion relative importance.In the description of the present invention, it should be noted that unless otherwise specific regulation
And restriction, term " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection,
Or it is integrally connected；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, intermediary can also be passed through
It is indirectly connected.For the ordinary skill in the art, above-mentioned term can be understood in the present invention in conjunction with concrete condition
Concrete meaning.In addition, in the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or more.
Any process described otherwise above or method description are construed as in flow chart or herein, and expression includes
It is one or more for realizing specific logical function or process the step of executable instruction code module, segment or portion
Point, and the range of the preferred embodiment of the present invention includes other realization, wherein can not press shown or discussed suitable
Sequence, including according to related function by it is basic simultaneously in the way of or in the opposite order, Lai Zhihang function, this should be of the invention
Embodiment person of ordinary skill in the field understood.
Fig. 1 is the flow diagram of the manufacturing method of high voltage withstanding secondary safeguard protection element in the embodiment of the present invention.Such as
Shown in figure, the manufacturing method of the high voltage withstanding secondary safeguard protection element, comprising:
Step S101: high voltage withstanding secondary safeguard protection element chip is formed.
In the present embodiment, the secondary safeguard protection element is high molecular positive temperature coefficient thermal sensitive resistor part.First
Selection macromolecule polymeric material simultaneously passes sequentially through mixing, granulation, squeezes out the techniques such as overlay film and pressing formation polymeric positive temperature system
Number thermistor chip, the pressing of macromolecular positive temperature coefficient thermosensitive resistor chip two sides have prepreg, layer are integrally formed
Lamination.For the electric property for further promoting thermistor element, also cross-linking radiation can be carried out by Co-60, irradiation dose is
20 to 200KGY.
Step S102: prepreg is pressed together on the high voltage withstanding secondary safeguard protection element chip upper and lower surface and shape
At laminates.
In the present embodiment, by upper prepreg, high voltage withstanding secondary safeguard protection element chip and lower prepreg according to
In the secondary fiberboard for being put into corresponding size thickness, the laminates that pressing forms rectangular shape are carried out.
Step S103: guide groove is formed in the laminates upper and lower ends, and fills tin cream in guide groove.
In the present embodiment, guide groove is formed in the laminates upper and lower ends by etch process, and is filled in guide groove
Tin cream.
Step S104: copper foil is pressed together on the laminates upper and lower surface.
In the present embodiment, copper foil is pressed together on by the high voltage withstanding secondary safeguard protection element by high-temperature laminating technique
Chip upper and lower surface.
Step S105: outer-layer circuit is formed by PCB processing method on copper foil.
It is referring to fig. 2, in the present embodiment, described that outer-layer circuit is formed by PCB processing method on copper foil, comprising:
Step S201: copper foil is connected with tin cream in the guide groove and forms pad.
Step S202: tin cream is connect with the electrode of high voltage withstanding secondary safeguard protection element chip and forms extraction electricity
Pole.
Step S203: pass through the heavy tin plating formation outer electrode of copper.
In the present embodiment, copper foil is connected with tin cream in the guide groove by formation by exposure, development and etch process
Tin cream connect with the electrode of high voltage withstanding secondary safeguard protection element chip and forms extraction electrode by pad, passes through heavy copper plating
Tin forms outer electrode, ultimately forms high voltage withstanding secondary safeguard protection element.
In conclusion the manufacturing method of the high voltage withstanding secondary safeguard protection element of the present embodiment, comprising: form resistance to high electricity
Press secondary safeguard protection element chip；Prepreg is pressed together on following table on the high voltage withstanding secondary safeguard protection element chip
Face and form laminates；Guide groove is formed in the laminates upper and lower ends, and fills tin cream in guide groove；Copper foil is pressed together on institute
State laminates upper and lower surface；And outer-layer circuit is formed by PCB processing method on copper foil, compared to existing plug-in type and table
The manufacturing method of silver-plated stent-type is welded in face, and the manufacturing process of high voltage withstanding secondary safeguard protection element of the invention is simpler
Efficiently, it is very suitable to high-volume automated production, and cost of labor and material cost are lower, improves high voltage withstanding secondary safety
The working efficiency of protection element manufacture simultaneously reduces manufacturing cost.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The descriptions such as example " or " some examples " mean particular features, structures, materials, or characteristics described in conjunction with this embodiment or example
It is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are different
Surely identical embodiment or example is referred to.Moreover, particular features, structures, materials, or characteristics described can be any
It can be combined in any suitable manner in one or more embodiment or examples.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (10)
1. a kind of manufacturing method of high voltage withstanding secondary safeguard protection element characterized by comprising
Form high voltage withstanding secondary safeguard protection element chip；
Prepreg is pressed together on the high voltage withstanding secondary safeguard protection element chip upper and lower surface and forms laminates；
Guide groove is formed in the laminates upper and lower ends, and fills tin cream in guide groove；
Copper foil is pressed together on the laminates upper and lower surface；And
Outer-layer circuit is formed by PCB processing method on copper foil.
2. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 1, which is characterized in that it is described
Outer-layer circuit is formed by PCB processing method on copper foil, comprising: copper foil is connected with tin cream in the guide groove and forms pad.
3. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 2, which is characterized in that described to incite somebody to action
Copper foil, which is connected with tin cream in the guide groove and forms pad, to be formed by exposure, development and etching.
4. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 1, which is characterized in that described
Formed after high voltage withstanding secondary safeguard protection element chip, further includes: to high voltage withstanding secondary safeguard protection element chip into
Row cross-linking radiation.
5. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 3, which is characterized in that the spoke
Irradiation dose according to crosslinking is 20 to 200KGY.
6. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 3, which is characterized in that the spoke
It according to crosslinking is carried out by Co-60.
7. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 1, which is characterized in that it is described
Outer-layer circuit is formed by PCB processing method on copper foil, comprising: pass through the heavy tin plating formation outer electrode of copper.
8. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 1, which is characterized in that described resistance to
The secondary safeguard protection element chip of high voltage is formed by squeezing out overlay film and pressing.
9. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 1, which is characterized in that described to lead
Slot is formed by etching.
10. the manufacturing method of high voltage withstanding secondary safeguard protection element according to claim 1, which is characterized in that also wrap
It includes: tin cream being connect with the electrode of high voltage withstanding secondary safeguard protection element chip and forms extraction electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910548187.1A CN110335731A (en) | 2019-06-21 | 2019-06-21 | The manufacturing method of high voltage withstanding secondary safeguard protection element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910548187.1A CN110335731A (en) | 2019-06-21 | 2019-06-21 | The manufacturing method of high voltage withstanding secondary safeguard protection element |
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| CN110335731A true CN110335731A (en) | 2019-10-15 |
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| CN201910548187.1A Pending CN110335731A (en) | 2019-06-21 | 2019-06-21 | The manufacturing method of high voltage withstanding secondary safeguard protection element |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000311805A (en) * | 1999-04-27 | 2000-11-07 | Tokai Konetsu Kogyo Co Ltd | Manufacturing method of ceramic resistance material |
| CN104244616A (en) * | 2014-08-27 | 2014-12-24 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for thin coreless substrate |
| CN104812157A (en) * | 2014-01-23 | 2015-07-29 | 深圳崇达多层线路板有限公司 | Power supply printed circuit board and processing method thereof |
| CN207409328U (en) * | 2017-10-27 | 2018-05-25 | 漳州雅宝电子有限公司 | A kind of surface mount macromolecular thermosensitive resistor |
| CN108399990A (en) * | 2018-02-11 | 2018-08-14 | 东莞市竞沃电子科技有限公司 | The production method and its PPTC plates of PPTC plates |
| CN109859918A (en) * | 2019-01-15 | 2019-06-07 | 深圳市金瑞电子材料有限公司 | The manufacturing method and crystallization apparatus of macromolecular positive temperature coefficient thermosensitive resistor element |
| CN109903939A (en) * | 2019-01-28 | 2019-06-18 | 深圳市金瑞电子材料有限公司 | A kind of strong resistance to weldering macromolecular positive temperature coefficient thermosensitive resistor chip |
-
2019
- 2019-06-21 CN CN201910548187.1A patent/CN110335731A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000311805A (en) * | 1999-04-27 | 2000-11-07 | Tokai Konetsu Kogyo Co Ltd | Manufacturing method of ceramic resistance material |
| CN104812157A (en) * | 2014-01-23 | 2015-07-29 | 深圳崇达多层线路板有限公司 | Power supply printed circuit board and processing method thereof |
| CN104244616A (en) * | 2014-08-27 | 2014-12-24 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for thin coreless substrate |
| CN207409328U (en) * | 2017-10-27 | 2018-05-25 | 漳州雅宝电子有限公司 | A kind of surface mount macromolecular thermosensitive resistor |
| CN108399990A (en) * | 2018-02-11 | 2018-08-14 | 东莞市竞沃电子科技有限公司 | The production method and its PPTC plates of PPTC plates |
| CN109859918A (en) * | 2019-01-15 | 2019-06-07 | 深圳市金瑞电子材料有限公司 | The manufacturing method and crystallization apparatus of macromolecular positive temperature coefficient thermosensitive resistor element |
| CN109903939A (en) * | 2019-01-28 | 2019-06-18 | 深圳市金瑞电子材料有限公司 | A kind of strong resistance to weldering macromolecular positive temperature coefficient thermosensitive resistor chip |
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Application publication date: 20191015 |