CN110333562B - Method for manufacturing silicon lens - Google Patents
Method for manufacturing silicon lens Download PDFInfo
- Publication number
- CN110333562B CN110333562B CN201910465649.3A CN201910465649A CN110333562B CN 110333562 B CN110333562 B CN 110333562B CN 201910465649 A CN201910465649 A CN 201910465649A CN 110333562 B CN110333562 B CN 110333562B
- Authority
- CN
- China
- Prior art keywords
- silicon
- etching
- imprinting
- lens
- glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
Abstract
The invention relates to a method for manufacturing a silicon lens, which comprises the following steps: coating an imprinting adhesive: coating imprinting glue on a silicon substrate; and (3) embossing: copying a lens structure graph with a required shape and size onto the imprinting glue by using a pre-prepared nano imprinting mould, and forming a three-dimensional polymer structure corresponding to the lens structure graph on the silicon substrate; silicon ICP dry etching: and etching the three-dimensional polymer structure of the silicon substrate obtained in the imprinting step by using a preset etching ratio of the imprinting glue and the silicon in the ICP etching cavity so as to copy the three-dimensional polymer structure onto the silicon substrate, thereby forming a silicon lens array.
Description
Technical Field
The invention relates to the field of sensor element preparation, in particular to a method for manufacturing a silicon lens.
Background
Silicon is the most widely used semiconductor material at present, has a large forbidden band width (1.12eV), and is transparent to 1.1-12 μm light wave silicon, so that the silicon can be used for manufacturing optical communication and infrared band optical modulation devices. A large number of conventional optical materials for optical communication and infrared bands are optical glass, the main component of the optical material is SiO2, and the refractive index of the optical material in visible light and infrared bands is 1.5-1.8. Compared with the conventional optical glass, the silicon as the infrared optical material has the advantages that the refractive index of the silicon is more than 3.4, and the silicon has stronger light modulation capability. The optical fiber is transparent in communication wavelength and is very suitable for being used as a transmission waveguide in certain wave bands; secondly, the silicon-based photoelectronic technology is highly compatible with the current mature Complementary Metal Oxide Semiconductor (CMOS) process, and the accumulation of technical experience is sufficient; in addition, the plasma dispersion effect of silicon is very significant, and the silicon-based optical modulation technology based on the effect is continuously breaking through. Therefore, the method is widely applied to various fields such as integrated chips, signal processing, photoelectric modulation and the like.
Optical devices are used to modulate electromagnetic waves at the wavelength level, requiring shape accuracy at the sub-wavelength level, typically tens of nanometers to microns. The method is limited by the brittleness of the silicon material, and the conventional machining and grinding process for manufacturing the silicon lens has low processing speed, high cost, extremely high requirements on equipment and a clamp, and extremely high requirements on a machine tool and a diamond grinding wheel for manufacturing the silicon lens. The silicon lens with the concave spherical surface is manufactured by adopting an isotropic silicon wet etching process, only the lens with the concave spherical structure can be manufactured, but the silicon lens with the convex surface structure cannot be manufactured, the concave spherical structure with the same batch size before and after processing is difficult to manufacture under the control of process conditions, and the curvature of the spherical structure cannot be accurately controlled.
Disclosure of Invention
The invention aims to provide a method for manufacturing a silicon lens.
The technical scheme adopted by the invention for solving the technical problems is as follows: a method of fabricating a silicon lens is constructed comprising the steps of:
coating an imprinting adhesive: coating imprinting glue on a silicon substrate;
and (3) embossing: copying a lens structure graph with a required shape and size onto the imprinting glue by using a pre-prepared nano imprinting mould, and forming a three-dimensional polymer structure corresponding to the lens structure graph on the silicon substrate;
silicon ICP dry etching: and etching the three-dimensional polymer structure of the silicon substrate obtained in the imprinting step by using the etching ratio of the preset imprinting glue and silicon in the ICP etching cavity so as to copy the three-dimensional polymer structure onto the silicon substrate, thereby forming the silicon lens array.
Preferably, the nanoimprint mold is made of metallic nickel, silicon, or transparent quartz by using photolithography and/or a single-point diamond processing method.
Preferably, the nanoimprint mold comprises a plurality of lens structure patterns arranged in an array, and the shape and the size of the lens structure patterns are determined according to the optical design structure requirements and the predetermined etching ratio of the imprint glue to silicon.
Preferably, the imprint glue is polymethyl methacrylate, polystyrene or an ultraviolet curing polymer.
Preferably, the three-dimensional polymer structure is a spherical or aspherical three-dimensional polymer structure meeting the silicon ICP dry etching requirement.
Preferably, in the step of coating the imprint glue, the coating thickness of the imprint glue is determined according to the height of the lens structure pattern, and when the height of the lens structure pattern is less than 10 μm, the coating of the imprint glue is performed by adopting a spin coating method;
when the height of the lens structure pattern is more than 10 mu m, the coating of the stamping glue is carried out by adopting a knife coating method.
Preferably, in the imprinting step, the lens structure pattern is copied onto the imprinting glue by using a hot-pressing or ultraviolet curing imprinting method.
Preferably, in the silicon ICP dry etching step, the silicon substrate three-dimensional polymer structure is placed in an ICP etching cavity, the ICP etching cavity is vacuumized to 10-5Pa, and three kinds of etching gas SF are introduced6/CF4/O2And adjusting SF6/CF4/O2Setting etching power and gas pressure in the ICP etching cavity in the etching process of the etching power so as to achieve the preset etching ratio of the imprinting glue to the silicon.
Preferably, when polymethyl methacrylate is used as the imprint resist, the etching power is set to 200W, ICP, the gas pressure in the etching chamber is set to 1.8Pa, and the proportion SF of the three etching gases is adjusted6/CF4/O2From 1:1:1.52 to 1:1:1.55, so that the etch ratio of the imprint resist to silicon approaches 1:1.
Preferably, after the silicon ICP dry etching step, the method also comprises
Cleaning: cleaning to remove residual glue on the surface of the silicon substrate;
detection and cutting: and detecting the surface roughness, the curvature radius and the vertical height of the manufactured silicon lens, and cutting when the surface roughness, the curvature radius and the vertical height of the manufactured silicon lens meet the preset requirements.
The implementation of the invention has the following beneficial effects: the method for manufacturing the silicon lens is suitable for manufacturing spherical and aspherical silicon lenses and silicon lens arrays thereof in batches, has high manufacturing efficiency and high precision, and can repeatedly use the nano-imprinting mold, thereby greatly reducing the manufacturing cost of a single silicon lens.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a flow chart of the present invention for fabricating a silicon lens;
FIGS. 2a-2e are schematic diagrams of the present invention for fabricating a silicon lens, wherein the mold is a 1-nano-imprint mold, the pattern of a 11-lens structure, the 2-silicon substrate, the 3-imprint glue, the array of 4-silicon lenses, and the 41, 42-silicon lenses.
Detailed Description
As shown in fig. 1 and fig. 2a-2e, the present invention is a method for fabricating a silicon lens, and further, a method for fabricating a silicon lens array based on a nanoimprint technology, comprising the following steps:
step S1: coating an imprinting adhesive: and coating the imprinting glue on the silicon substrate.
In the present embodiment, the imprint glue is polymethyl methacrylate (PMMA), Polystyrene (PS) or ultraviolet cured polymer (UV-NIL), and it is understood that other types of imprint glue can be selected according to actual requirements, and is not limited herein.
The silicon substrate is selected to be monocrystalline silicon meeting the preparation requirement of the semiconductor device, and it can be understood that the type of the corresponding silicon substrate can also be selected according to the actual requirement, which is not limited specifically here.
Before the step of coating the imprinting glue, the silicon substrate needs to be cleaned, the surface of the silicon substrate is kept clean and dry, and the influence of fine impurities on the yield of finished products is avoided.
Step S2: and (3) embossing: and copying the lens structure pattern with the required shape and size onto the imprinting glue by using a pre-prepared nano-imprinting mould, and forming a three-dimensional polymer structure corresponding to the lens structure pattern on the silicon substrate.
In the imprinting step, parameters such as pressure, temperature, imprinting time and the like in the imprinting process are set according to the characteristics of the imprinting glue, and the lens structure graph of the nano imprinting mold is copied to the imprinting glue to obtain a three-dimensional polymer structure, wherein the three-dimensional polymer structure is a spherical or aspherical three-dimensional polymer structure meeting the silicon ICP dry etching requirement.
Taking PMMA as an example of the stamping glue, in the stamping step, the stamping temperature is set to be 150 ℃, the pressure is set to be 10MPa, and the stamping time is kept for 5 min.
Furthermore, the lens structure pattern is copied to the stamping glue by adopting a hot pressing or ultraviolet curing stamping mode, and the ultraviolet curing mode is preferred under the condition that the requirement on the precision of the lens structure pattern is high. It is understood that the stamping method may be suitable according to actual requirements, and is not limited specifically herein.
In this embodiment, the nanoimprint mold is made of metal nickel, silicon or transparent quartz by using photolithography and/or single-point diamond processing, and further, the nanoimprint mold includes a plurality of lens structure patterns arranged in an array, the shape and size of which are determined according to the optical design structure requirements and the predetermined etching ratio of the imprint resist to silicon.
The nano-imprinting mold is obtained through finish machining, the machining precision can reach 10nm under the limit condition, the nano-imprinting mold can be repeatedly used, and batch production is uniformly distributed on a single silicon lens, so that the manufacturing cost of the nano-imprinting mold can be ignored.
Further, in the step of coating the imprint glue, the coating thickness of the imprint glue is determined according to the height of the lens structure pattern, and when the height of the lens structure pattern is less than 10 μm, the imprint glue is coated by using a spin coating method.
When the height of the lens structure pattern is more than 10 μm, the coating of the imprinting glue is performed by a doctor blade method. The blade coating method can avoid the condition of uneven spin coating when the height of the lens structure graph is higher.
Step S3: silicon ICP dry etching: and etching the three-dimensional polymer structure of the silicon substrate obtained in the imprinting step by using the etching ratio of the preset imprinting glue and the silicon in the ICP etching cavity so as to copy the three-dimensional polymer structure onto the silicon substrate, thereby forming the silicon lens array.
It is understood that the silicon substrate three-dimensional polymer structure is an integral structure of a silicon substrate and an imprint glue three-dimensional polymer obtained on the silicon substrate.
In the step of silicon ICP dry etching, the three-dimensional polymer structure of the silicon substrate is placed in an ICP etching cavity and is vacuumized to 10 DEG-5Pa, three kinds of etching gases SF are introduced6/CF4/O2And adjusting SF6/CF4/O2The etching power and the gas pressure in the ICP etching cavity in the etching process are set so as to achieve the predetermined etching ratio of the imprinting glue to the silicon.
When polymethyl methacrylate is used as the imprinting adhesive, the pressure of the gas in the etching chamber is set to be 1.8Pa with the etching power of 200W, ICP, and the proportion SF of the three etching gases is adjusted6/CF4/O2From 1:1:1.52 to 1:1:1.55, so that the etch ratio of the imprint resist to silicon approaches 1:1. Further, when the etching gas ratio is kept to be 1:1:1.5, the longitudinal dimension of the nanoimprint mold can be adjusted to be 1/1.08 of the designed dimension, so that the final etching result is ensured to be consistent with the designed shape dimension.
It will be appreciated that the dry etching of silicon ensures a 1:1, or close to 1:1, etch ratio for silicon and imprint resist that is critical for lens shape retention, with a stable etch rate. The conventional silicon dry etching adopts SF6/CF4Atmosphere, with an etching ratio of silicon and imprint resist much higher than 1: in this example, O was added to the original atmosphere2The etching device is used for accelerating the etching of the imprinting glue, and the etching ratio of the imprinting glue to silicon is adjusted to 1:1 by controlling the proportion of the three gases. It can be understood that the proportion of the three etching gases needs to be adjusted according to different cavity sizes of different equipment, wherein the injection amount of the etching gases can be controlled with high precision according to a flow meter provided with a regulating valve, and the precision can reach 1sccm (standard cubic centimeter per minute).
After the silicon ICP dry etching step, step S4 is further included: cleaning: and cleaning to remove residual glue on the surface of the silicon substrate.
In this cleaning step, O may be used2Plasma bodyAnd cleaning, namely removing residual glue left on the surface of the silicon substrate in the silicon ICP dry etching step. The PMMA can also be cleaned by a wet method, acetone is used for soaking and ultrasonic wave is added for cleaning, then residual acetone is washed in clean water, and finally drying is carried out, while drying is not needed when O2 plasma is used for dry cleaning.
After the cleaning step, step S5 is also included: detection and cutting: and detecting the surface roughness, the curvature radius and the vertical height of the manufactured silicon lens, and cutting when the surface roughness, the curvature radius and the vertical height of the manufactured silicon lens meet the preset requirements.
In this embodiment, the surface of the lens is inspected by an electron microscope and a surface profiler, and the surface roughness of the silicon lens is required to be less than 0.1 μm, and the radius of curvature and the vertical height of the lens are required to be less than 1/5 of the operating wavelength, and are generally required to be within 1 μm. And testing to meet the requirements, and finally cutting to obtain the silicon lens or the silicon lens array meeting the required curvature radius.
The method for manufacturing the silicon lens is suitable for manufacturing spherical and aspherical silicon lenses and silicon lens arrays thereof in batches, has high manufacturing efficiency and high precision, and can repeatedly use the nano-imprinting mold, thereby greatly reducing the manufacturing cost of a single silicon lens.
It is to be understood that the foregoing examples, while indicating the preferred embodiments of the invention, are given by way of illustration and description, and are not to be construed as limiting the scope of the invention; it should be noted that, for those skilled in the art, the above technical features can be freely combined, and several changes and modifications can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention; therefore, all equivalent changes and modifications made within the scope of the claims of the present invention should be covered by the claims of the present invention.
Claims (7)
1. A method of fabricating a silicon lens, comprising the steps of:
coating an imprinting adhesive: coating imprinting glue on a silicon substrate;
and (3) embossing: copying a lens structure graph with a required shape and size onto the imprinting glue by using a pre-prepared nano imprinting mould, and forming a three-dimensional polymer structure corresponding to the lens structure graph on the silicon substrate;
silicon ICP dry etching: etching the three-dimensional polymer structure of the silicon substrate obtained in the imprinting step by using a preset etching ratio of imprinting glue and silicon in an ICP (inductively coupled plasma) etching cavity so as to copy the three-dimensional polymer structure onto the silicon substrate, thereby forming a silicon lens array;
in the step of silicon ICP dry etching, the silicon substrate three-dimensional polymer structure is placed in an ICP etching cavity and is vacuumized to 10 DEG-5Pa, three kinds of etching gases SF are introduced6/CF4/O2And adjusting SF6/CF4/O2Setting etching power and gas pressure in the ICP etching cavity in the etching process of the etching power so as to achieve the predetermined etching ratio of the imprinting glue to the silicon;
the stamping glue is polymethyl methacrylate, polystyrene or ultraviolet curing polymer;
when polymethyl methacrylate is used as the imprinting adhesive, the pressure of the gas in the etching chamber is set to be 1.8Pa with the etching power of 200W, ICP, and the proportion SF of the three etching gases is adjusted6/CF4/O21:1:1.52 to 1:1:1.55, so that the etching ratio of the imprint lithography glue to silicon is 1: 1;
wherein, when the three etching gas ratios SF are maintained6/CF4/O2And when the ratio is 1:1:1.5, adjusting the longitudinal dimension of the nano-imprint mold to be 1/1.08 of the designed dimension so as to ensure that the final etching result is consistent with the designed shape dimension.
2. The method of fabricating a silicon lens according to claim 1, wherein the nanoimprint mold is made of metallic nickel, silicon, or transparent quartz by using photolithography and/or a single-point diamond processing method.
3. A method of fabricating a silicon lens as claimed in any of claims 1 to 2 wherein the nanoimprint mold includes a plurality of lens structure patterns arranged in an array having a shape and size determined according to optical design structure requirements and the predetermined etch ratio of imprint resist to silicon.
4. The method of claim 1, wherein the three-dimensional polymer structure is a spherical or aspherical three-dimensional polymer structure meeting the dry etching requirements of silicon ICP.
5. The method of claim 1, wherein in the step of coating the imprint glue, a coating thickness of the imprint glue is determined according to a height of the lens structure pattern, and when the height of the lens structure pattern is less than 10 μm, the imprint glue is coated by spin coating;
when the height of the lens structure pattern is more than 10 mu m, the coating of the stamping glue is carried out by adopting a knife coating method.
6. The method of claim 1, wherein in the imprinting step, the lens structure pattern is transferred to the imprinting glue by using a thermal pressing or an ultraviolet curing imprinting method.
7. The method for fabricating a silicon lens according to claim 1, further comprising, after the silicon ICP dry etching step, a step of etching the silicon
Cleaning: cleaning to remove residual glue on the surface of the silicon substrate;
detection and cutting: and detecting the surface roughness, the curvature radius and the vertical height of the manufactured silicon lens, and cutting when the surface roughness, the curvature radius and the vertical height of the manufactured silicon lens meet the preset requirements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910465649.3A CN110333562B (en) | 2019-05-30 | 2019-05-30 | Method for manufacturing silicon lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910465649.3A CN110333562B (en) | 2019-05-30 | 2019-05-30 | Method for manufacturing silicon lens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110333562A CN110333562A (en) | 2019-10-15 |
| CN110333562B true CN110333562B (en) | 2021-06-15 |
Family
ID=68140499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910465649.3A Active CN110333562B (en) | 2019-05-30 | 2019-05-30 | Method for manufacturing silicon lens |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110333562B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110923754A (en) * | 2019-12-04 | 2020-03-27 | 瑞声通讯科技(常州)有限公司 | Manufacturing method of Fresnel mold easy to demold |
| CN112099112A (en) * | 2020-09-03 | 2020-12-18 | 深圳市隆利科技股份有限公司 | Manufacturing method of LED lamp panel |
| CN112222954B (en) * | 2020-09-14 | 2022-04-01 | 天津津航技术物理研究所 | Processing method of non-spherical convex silicon lens with platform |
| CN112630872A (en) * | 2020-12-24 | 2021-04-09 | 华中科技大学 | Preparation method of three-dimensional micro-lens array |
| CN113703081A (en) * | 2021-07-30 | 2021-11-26 | 苏州光舵微纳科技股份有限公司 | Method for manufacturing micro-lens array structure |
| CN116661240B (en) * | 2023-07-31 | 2023-10-03 | 无锡邑文电子科技有限公司 | Preparation method of super-surface lens with nano round platform polarization structure |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3268929B2 (en) * | 1993-04-19 | 2002-03-25 | オリンパス光学工業株式会社 | Optical element manufacturing method |
| US5770120A (en) * | 1994-12-09 | 1998-06-23 | Olympus Optical Co., Ltd. | Method of manufacturing die and optical element performed by using the die |
| KR100537505B1 (en) * | 2003-01-27 | 2005-12-19 | 삼성전자주식회사 | Fabrication method of microlens array |
| CN102901997B (en) * | 2012-09-14 | 2014-12-31 | 华中科技大学 | Preparation method of curved compound eye |
| CN103913784A (en) * | 2014-03-26 | 2014-07-09 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing polymer micro lens array |
| CN105449011B (en) * | 2015-12-08 | 2017-12-22 | 厦门理工学院 | A kind of solar cell microlens array film and preparation method thereof |
-
2019
- 2019-05-30 CN CN201910465649.3A patent/CN110333562B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110333562A (en) | 2019-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110333562B (en) | Method for manufacturing silicon lens | |
| CN102768381B (en) | Micro-nano structured D-shaped optical fiber, method for producing same and application | |
| CN108710267B (en) | Preparation method of thin film micro-optical structure based on photoetching and chemical mechanical polishing | |
| JP3446835B2 (en) | Press mold for glass optical element | |
| CN103257383A (en) | Preparation method of blazing-angle-variable blazed grating and double-blazed grating and products | |
| JP2009128543A (en) | Method for manufacturing antireflection structure | |
| JPWO2007020967A1 (en) | Microlens mold, microlens and manufacturing method thereof | |
| CN110568530A (en) | Curved surface bionic compound eye processing method based on die forming | |
| CN111366996A (en) | Method for preparing micro-lens array | |
| US20150362707A1 (en) | Optics with Built-In Anti-Reflective Sub-Wavelength Structures | |
| US5843321A (en) | Method of manufacturing optical element | |
| CN112630872A (en) | Preparation method of three-dimensional micro-lens array | |
| CN111308597A (en) | Preparation method of submicron structure grating | |
| CN101574840B (en) | Cavity manufacturing method | |
| JP2020097521A (en) | Method for manufacturing optical glass element | |
| JP6611113B1 (en) | Method for manufacturing plastic element having fine uneven structure on surface | |
| CN109748236A (en) | A kind of two-dimensional nano mould making method of low cost | |
| JP2005132679A (en) | Manufacturing method of optical element having non-reflective structure and optical element having non-reflective structure manufactured through the method | |
| CN113740942B (en) | Micro-lens array grating and preparation method and application thereof | |
| US20030038033A1 (en) | Process for fabricating high aspect ratio embossing tool and microstructures | |
| CN109581559B (en) | Double-grating nano structure composed of four-corner biconical array and preparation method thereof | |
| CN108957624B (en) | Transfer printing method of micro-nano structure on end face of optical fiber | |
| KR102179002B1 (en) | Varifocal lens having nano structures and manufacturing method thereof | |
| CN111983735A (en) | Light diffuser | |
| KR101311450B1 (en) | Soft-mold and fabricating method of the same, and fabricating method of optical flim using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |