CN110323320A - A kind of LED encapsulation method - Google Patents
A kind of LED encapsulation method Download PDFInfo
- Publication number
- CN110323320A CN110323320A CN201910576226.9A CN201910576226A CN110323320A CN 110323320 A CN110323320 A CN 110323320A CN 201910576226 A CN201910576226 A CN 201910576226A CN 110323320 A CN110323320 A CN 110323320A
- Authority
- CN
- China
- Prior art keywords
- line
- encapsulation
- glue
- led
- encapsulation glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The present invention provides a kind of LED encapsulation method, includes the following steps: A1, provides package support, by LED chip sealing on package support；A2 pastes the first encapsulation glue-line, and the first encapsulation glue-line covers light output surface and the side of the LED chip, and the first encapsulation glue-line is silica-silica gel composite layer；A3 pastes the second encapsulation glue-line in the first encapsulation film surface, and the second encapsulation glue-line includes understructure and superstructure, and the understructure is fluorescent adhesive layer, and the superstructure is transparent silicon glue-line；A4 pastes third encapsulation glue-line on the surface of the superstructure of the second encapsulation glue-line, and the third encapsulation glue-line is fluorescent adhesive layer.The LED lamp bead prepared by this method, whole light-out effect and amount of light can be promoted preferably.
Description
Technical field
The present invention relates to lighting areas, and in particular to a kind of LED encapsulation method.
Background technique
Light emitting diode is referred to as LED, refers to made of the compound containing gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N) etc.
Electric energy can be converted into the semiconductor diode of luminous energy.In the utilization of this block of lighting area, need first to be packaged into LED chip
Then LED package again uses LED package into different lamps finished product.LED calorific value is not overcome in the prior art greatly
A great problem.
In LED lamp bead, package support, sealing are generally comprised in LED chip and covering LED chip on package support
Fluorescent glue, because LED chip is isolated sealing, so the mode of LED chip heat transmitting outward is mainly heat transfer and heat radiation,
Conventional LED lamp bead is after evenly mixing packaged lamp bead with glue using the form of even spread, i.e. fluorescent powder, at this time
Fluorescent powder be inside lamp bead it is equally distributed, it is glimmering under the heat radiation effect of heat source (chip), the conduction of heat of colloid
Light powder extreme temperatures, some are up to 150 DEG C.Fluorescent powder is with the raising of lamp bead temperature, and launching efficiency reduces, so that whole lamp is in warm
Brightness declines when stablizing.
Summary of the invention
For this purpose, the present invention provides a kind of LED encapsulation method, it can be effective by LED lamp bead prepared by the LED encapsulation method
Improve the above problem.
To achieve the above object, technical solution provided by the invention is as follows:
A kind of LED encapsulation method, includes the following steps:
A1 provides package support, by LED chip sealing on package support；
A2, pastes the first encapsulation glue-line, and the first encapsulation glue-line is covered on package support and covers the LED core
The light output surface of piece and side, the first encapsulation glue-line is silica-silica gel composite layer；
A3 pastes the second encapsulation glue-line in the first encapsulation film surface, the second encapsulation glue-line include understructure and
Superstructure, the understructure are fluorescent adhesive layer, and the superstructure is transparent silicon glue-line；
A4 pastes third encapsulation glue-line on the surface of the superstructure of the second encapsulation glue-line, and the third encapsulation glue-line is
Fluorescent adhesive layer.
Further, in step A2, the partial size of the silica-silica gel composite layer silica dioxide granule is 8-10 μ
m。
Further, in step A2, the silica-silica dioxide granule of silica gel composite layer and the mixing ratio of silica gel
Example is 1.5:100.
Further, in step A2, the surface of the first encapsulation glue-line is higher by the light output surface 0.05- of LED chip
0.1mm。
Further, in step A3, step is specifically included:
A31 pastes fluorescent adhesive layer in the first encapsulation film surface；
Fluorescent powder in fluorescent adhesive layer is precipitated to bottom, and then form the glimmering of understructure by centrifugation by A32
The transparent silicon glue-line of optical cement layer and superstructure.
Further, in step A3, step is specifically included:
A31 pastes the fluorescent adhesive layer of understructure in the first encapsulation film surface；
A32 pastes the transparent silicon glue-line of superstructure on the surface of the fluorescent adhesive layer of understructure.
Further, it between step A3 and step A4, further comprises the steps of:
A3-4-1 carries out the packaging body for completing step A3 to be baked to the first encapsulation glue-line and the second encapsulation curable adhesive layer；
A3-4-2 carries out photoelectric parameter detection.
Further, the package support is the package support with bowl or box dam, the LED chip, the first encapsulation
Glue-line, the second encapsulation glue-line and third encapsulation glue-line are all set in bowl or box dam.
The technical solution provided through the invention, has the following beneficial effects:
The LED lamp bead prepared by this method, silica-silica gel composite layer of the first encapsulation glue-line is compared to common
Silica gel packaging glue, the capacity of heat transmission is strong, and the heat that can issue LED chip more in time, is faster conducted to package support, subtracts
The heat of fluorescent adhesive layer of few conduction into the second encapsulation glue-line or third encapsulation glue-line；Second encapsulation glue-line understructure be
Fluorescent adhesive layer, the barrier for forming a kind of heat radiation for reducing LED chip (can absorb the light of LED chip sending and by its turn
Change), it can effectively prevent the heat radiation of LED chip from being applied to the fluorescent powder of third encapsulation glue-line；The upper layer of second encapsulation glue-line
Structure is transparent silicon glue-line, and the capacity of heat transmission is poor, provides the transparent glue channel an of low-thermal conductivity, reduces heat transfer and makees
With slowing down the heat conducted by way of heat transfer to third encapsulation glue-line, can be effectively reduced third encapsulation glue-line
Temperature, third encapsulation glue-line are arranged to fluorescent glue, and the light that on the one hand can guarantee that LED chip issues sufficiently is excited, and is guaranteed
The launching efficiency and amount of light of fluorescent powder on the other hand can be under the premise of the light efficiencies of the fluorescent glue of the second encapsulation glue-line, then pass through
Adjustment third encapsulates the fluorescent glue of glue-line to adjust or improve whole light efficiency.
Silica-silica gel composite layer of first encapsulation glue-line is under the action of silica dioxide granule, additionally it is possible to realize light
Uniform diffusion, make it is whole go out light distribution it is more preferable.
All fluorescent powders (fluorescent adhesive layer in the second encapsulation glue-line and third encapsulation glue-line) mention above LED chip
The utilization rate of high fluorescent powder.
The LED lamp bead prepared by this method, whole light-out effect and amount of light can be promoted preferably.
Detailed description of the invention
Fig. 1 show the flow diagram of LED encapsulation method in embodiment；
Fig. 2 show the structural schematic diagram one that LED in embodiment is packaged；
Fig. 3 show the structural schematic diagram two that LED in embodiment is packaged；
Fig. 4 show the structural schematic diagram three that LED in embodiment is packaged；
Fig. 5 show LED lamp bead structural schematic diagram made of LED encapsulation method is packaged in embodiment.
Specific embodiment
To further illustrate that each embodiment, the present invention are provided with attached drawing.These attached drawings are that the invention discloses one of content
Point, mainly to illustrate embodiment, and the associated description of specification can be cooperated to explain the operation principles of embodiment.Cooperation ginseng
These contents are examined, those of ordinary skill in the art will be understood that other possible embodiments and advantages of the present invention.In figure
Component be not necessarily to scale, and similar component symbol is conventionally used to indicate similar component.
Now in conjunction with the drawings and specific embodiments, the present invention is further described.
Shown in referring to Fig.1, a kind of LED encapsulation method provided in this embodiment includes the following steps:
A1 provides package support 10, and by 20 sealing of LED chip on package support 10, structure is as shown in Figure 2；
In this step, package support 10 is the package support conventionally used for packaging LED chips 20, to guarantee thermal conductivity, this
In embodiment, the preferably metallic support of good heat conduction effect；Certainly, without being limited thereto in other embodiments.20 sealing of LED chip
In on package support 10, mode is LED chip 20 by die bonds such as elargol or tin creams on package support 10, then passes through bonding
Line is electrically connected with the electrode of package support 10；Or be make directly by way of upside-down mounting the electrode of LED chip 20 directly with
The electrode of package support 10 is electrically connected；Above-mentioned is routine techniques, is no longer described in detail one by one herein.
A2, pastes the first encapsulation glue-line 30, and the first encapsulation glue-line 30 is covered on package support 10 and described in covering
The light output surface of LED chip 20 and side, the first encapsulation glue-line 30 is silica-silica gel composite layer, structure such as Fig. 3
It is shown；
Specifically, silica-silica gel composite layer is that silica dioxide granule and silica gel are mixed in a certain ratio.
A3 pastes the second encapsulation glue-line 40 on the first encapsulation 30 surface of glue-line, and the second encapsulation glue-line 40 includes lower layer
Structure 41 and superstructure 42, the understructure 41 are fluorescent adhesive layer, and the superstructure 42 is transparent silicon glue-line, knot
Structure is as shown in Figure 4；
A4 pastes third encapsulation glue-line 50, the third encapsulation on the surface of the superstructure 42 of the second encapsulation glue-line 40
Glue-line 50 is fluorescent adhesive layer, and structure is as shown in figure 5, complete the preparation of LED lamp bead.
The LED lamp bead prepared by this method, silica-silica gel composite layer of the first encapsulation glue-line 30 is compared to common
Silica gel packaging glue, the capacity of heat transmission is strong, the heat that LED chip 20 can be issued more in time, faster conduction to encapsulation branch
Frame 10 reduces the heat of fluorescent adhesive layer of the conduction into the second encapsulation glue-line 40 or third encapsulation glue-line 50；Second encapsulation glue-line
40 understructure 41 is fluorescent adhesive layer, and the barrier for forming a kind of heat radiation for reducing LED chip 20 (can absorb LED core
The light of piece sending is simultaneously converted), it can effectively prevent the heat radiation of LED chip 20 from being applied to the fluorescence of third encapsulation glue-line 50
Powder；The superstructure 42 of second encapsulation glue-line 40 is transparent silicon glue-line, and the capacity of heat transmission is poor, provides the saturating of a low-thermal conductivity
Gelatin aquaporin reduces conduction of heat, slows down the heat conducted by way of heat transfer to third encapsulation glue-line 50, energy
The temperature of third encapsulation glue-line 50 is enough effectively reduced, third encapsulation glue-line 50 is arranged to fluorescent glue, on the one hand can guarantee LED core
The light that piece 20 issues sufficiently is excited, and guarantees the launching efficiency and amount of light of fluorescent powder, on the other hand, can be in the second packaging plastic
Layer 40 fluorescent glue light efficiency under the premise of, then by adjusting third encapsulation glue-line 50 fluorescent glue come adjust or improves entirety light
Effect.
Fluorescent adhesive layer in the fluorescent adhesive layer and third encapsulation glue-line 50 of second encapsulation glue-line 40 can play excitation and turn
The effect of change, meanwhile, the fluorescent adhesive layer of the second encapsulation glue-line 40 also primarily serves the effect of barrier heat radiation, and third encapsulates glue-line
Fluorescent adhesive layer in 50 also primarily serves the effect of adjusting and optimizing.
Meanwhile first encapsulates silica-silica gel composite layer of glue-line 30 under the action of silica dioxide granule, additionally it is possible to
The uniform diffusion for realizing light keeps whole light distribution out more preferable.
All fluorescent powders (fluorescent adhesive layer in the second encapsulation glue-line 40 and third encapsulation glue-line 50) are in LED chip 20
The utilization rate of fluorescent powder is improved in top.
The LED lamp bead prepared by this method, whole light-out effect and amount of light can be promoted preferably.
Specifically, the LED chip 20 is blue-light LED chip in the present embodiment, pass through fluorescent glue (the second encapsulation glue-line
40 and third encapsulation glue-line 50 in fluorescent adhesive layer) effect form white light.Of course, in other embodiments, can also adopt
With other LED chips and fluorescent glue.
Further, in the present embodiment, in step A2, the silica-silica gel composite layer 30 silica dioxide granule
Partial size be 8-10 μm of micron silica particle, grain diameter is small, is uniformly mixed, and light diffusing is good.Of course,
In other embodiments, the silica dioxide granule of other particle sizes, such as 10 μm or more of micron silica can also be used
Particle, or be nanoscale silica dioxide granule etc..
Further, the silica-silica dioxide granule of silica gel composite layer 30 and the mixed proportion of silica gel are
1.5:100, the ratio are weight ratio, silica-silica gel composite layer 30 coefficient of expansion can be reduced, to reduce para-linkage line
Stress, improve service life.
Further, in the present embodiment, in step A3, specifically including step: A31 is pasted on the first encapsulation 30 surface of glue-line
Cover fluorescent adhesive layer；Fluorescent powder in fluorescent adhesive layer is precipitated to bottom, and then form understructure 41 by centrifugation by A32
Fluorescent adhesive layer and superstructure 42 transparent silicon glue-line；And then form the second encapsulation glue-line 40 layered.
Fluorescent powder is made to be precipitated to the fluorescent adhesive layer that understructure 41 is formed on bottom by the way of centrifugation, so that lower layer ties
The fluorescent powder of the fluorescent adhesive layer of structure 41 is close, forms a kind of barrier of heat radiation for reducing blue light, more effectively prevents blue light
Heat radiation is applied to the fluorescent powder of third encapsulation glue-line 50, reduces the temperature of the fluorescent powder of third encapsulation glue-line 50.
Meanwhile when the second encapsulation glue-line 40 carries out centrifugation fluorescent powder, silica-silicon of the first encapsulation glue-line 30
The silica dioxide granule of glue composite layer can also play support and barrier effect, and the fluorescent powder of the second encapsulation glue-line 40 is prevented to be centrifuged
It penetrates into the first encapsulation glue-line 30, in this way, preparation step can be simplified it is not necessary that the first encapsulation glue-line 30 is carried out baking-curing in advance
Suddenly, it improves efficiency.
Further, in the present embodiment, in step A2, the surface of the first encapsulation glue-line 30 is higher by LED chip 20
Light output surface 0.05-0.1mm.The surface distance first of LED chip 20 encapsulates 30 surface of glue-line also close to LED chip at this time
The space of 20 thickness half, extends the distance of heat transfer, reduces upward heat transfer heat.
Further, in the present embodiment, between step A3 and step A4, A3-4-1 is further comprised the steps of:, step will be completed
The packaging body of A3 carries out being baked to the first encapsulation glue-line 30 and the second encapsulation glue-line 40 solidifies；A3-4-2 carries out photoelectric parameter inspection
It surveys.It is sealed by detecting the light-out effect after the fluorescent powder excitation conversion of the second encapsulation glue-line 40 in advance, then by adjusting third
The fluorescent glue of glue-line 50 is filled to adjust or improve whole light efficiency, such as changes colour temperature.It is specifically adjusted according to actual test value, more
It is accurate.Of course, in other embodiments, can rationally be calculated by proportion etc., without using above-mentioned steps.
The package support 10 is the package support with bowl or box dam, and the LED chip 20, first encapsulates glue-line
30, the second encapsulation glue-line 40 and third encapsulation glue-line 50 are all set in bowl or box dam.Forming is not easy to collapse.Preferably
The substrate of package support 10 with bowl 11, bowl 11 and package support 10 connects, and thermal conductivity is good, and realization is preferably led
Heat.
It is illustrated as follows with experimental data:
The fluorescent powder of two parts of equivalent and identical proportion is taken, portion is used for the encapsulation of routine LED, i.e., is directly carried out with fluorescent glue
It is packaged into LED lamp bead 1；Another is used for the LED lamp bead 2 of this programme preparation.In LED lamp bead 1 and LED lamp bead 2, in addition to structure
Layer is different, and such as package support, LED chip are identical for other.
Above-mentioned LED lamp bead 1 and LED lamp bead 2 are carried out to the cold conditions data and hot data of test section, cold conditions data refer to
Lamp bead temperature is not increased to testing photoelectronic parameter when thermostabilization also, and hot data refer to the test after lamp bead reaches thermostabilization
Data, specifically, hot temperature is 105 DEG C.
Wherein, table 1 is the cold conditions data of LED lamp bead 1；Table 2 is the hot data of LED lamp bead 1；Table 3 is LED lamp bead 2
Cold conditions data；Table 4 is the hot data of LED lamp bead 2.
The cold conditions data of 1 LED lamp bead 1 of table
| Serial number | Luminous flux lm | Colour rendering index Ra | Colour temperature CCT |
| 1 | 120.1 | 83.3 | 2901 |
| 2 | 119.4 | 83.1 | 2911 |
| 3 | 121.2 | 83.5 | 2920 |
| 5 | 122.2 | 82.9 | 2911 |
| 6 | 120.4 | 83.2 | 2914 |
| 7 | 118.3 | 83 | 2890 |
| 8 | 119.5 | 83.2 | 2897 |
| Average value | 120.16 | 83.17 | 2906 |
The hot data of 2 LED lamp bead 1 of table
| Serial number | Luminous flux lm | Colour rendering index Ra | Colour temperature CCT |
| 1 | 94.99 | 84 | 3133 |
| 2 | 94.92 | 84.2 | 3143 |
| 3 | 96.48 | 84.3 | 3153 |
| 5 | 96.92 | 84.1 | 3143 |
| 6 | 95.41 | 83.9 | 3147 |
| 7 | 93.59 | 84.3 | 3121 |
| 8 | 94.88 | 84.1 | 3128 |
| Average value | 95.31 | 84.13 | 3138 |
For 1 luminous flux of LED lamp bead: the ratio of hot data and cold conditions data are as follows: 95.31/120.16=79.32%.
The cold conditions data of 3 LED lamp bead 2 of table
| Serial number | Luminous flux lm | Colour rendering index Ra | Colour temperature CCT |
| 1 | 123.1 | 83 | 2896 |
| 2 | 120.4 | 8.1 | 2884 |
| 3 | 125.2 | 83.0 | 2924 |
| 5 | 124.2 | 82.7 | 2912 |
| 6 | 120.4 | 83.0 | 2904 |
| 7 | 122.3 | 83.1 | 2889 |
| 8 | 122.5 | 83.0 | 2900 |
| Average value | 122.59 | 82.99 | 2901 |
The hot data of 4 LED lamp bead 2 of table
| Serial number | Luminous flux lm | Colour rendering index Ra | Colour temperature CCT |
| 1 | 98.60 | 84.1 | 3127 |
| 2 | 96.48 | 84 | 3114 |
| 3 | 100.35 | 84.2 | 3157 |
| 5 | 99.61 | 83.8 | 3144 |
| 6 | 96.68 | 83.7 | 3136 |
| 7 | 98.09 | 84.2 | 3120 |
| 8 | 98.17 | 83.8 | 3132 |
| Average value | 98.28 | 83.97 | 3133 |
For 2 luminous flux of LED lamp bead: the ratio of hot data and cold conditions data are as follows: 98.28/122.59=80.17%.
Under identical fluorescent powder type, the same terms such as Chip scale, lamp bead (LED lamp bead 2) brightness ratio of the present invention is conventional
Height (the 122.59-120.16)/120.16=2.02% of (LED lamp bead 1).
Hot sustainment rate, the height (80.17- of lamp bead (LED lamp bead 2) brightness ratio of the present invention conventional (LED lamp bead 1)
79.32)/79.32=1.02%.
Embodiment two
A kind of LED encapsulation method provided in this embodiment, difference roughly the same with the method provided in embodiment one
Be: the second encapsulation glue-line 40 is formed in the present embodiment, in step A3 specifically includes step: A31, in the first encapsulation glue-line
30 surfaces paste the fluorescent adhesive layer of understructure 41；A32 pastes superstructure on the surface of the fluorescent adhesive layer of understructure 41
42 transparent silicon glue-line.It also can be realized the layering knot of the second encapsulation glue-line 40 in the present embodiment by way of being layered and pasting
Structure.
Although specifically showing and describing the present invention in conjunction with preferred embodiment, those skilled in the art should be bright
It is white, it is not departing from the spirit and scope of the present invention defined by the appended claims, it in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (8)
1. a kind of LED encapsulation method, which comprises the steps of:
A1 provides package support, by LED chip sealing on package support；
A2, pastes the first encapsulation glue-line, and the first encapsulation glue-line is covered on package support and covers going out for the LED chip
Optical surface and side, the first encapsulation glue-line is silica-silica gel composite layer；
A3 pastes the second encapsulation glue-line in the first encapsulation film surface, and the second encapsulation glue-line includes understructure and upper layer
Structure, the understructure are fluorescent adhesive layer, and the superstructure is transparent silicon glue-line；
A4 pastes third encapsulation glue-line on the surface of the superstructure of the second encapsulation glue-line, and the third encapsulation glue-line is fluorescence
Glue-line.
2. LED encapsulation method according to claim 1, it is characterised in that: in step A2, the silica-silica gel is multiple
The partial size for closing the silica dioxide granule of layer is 8-10 μm.
3. LED encapsulation method according to claim 1 or 2, it is characterised in that: in step A2, the silica-silica gel
The silica dioxide granule of composite layer and the mixed proportion of silica gel are 1.5:100.
4. LED encapsulation method according to claim 1, it is characterised in that: in step A2, the table of the first encapsulation glue-line
Face is higher by the light output surface 0.05-0.1mm of LED chip.
5. LED encapsulation method according to claim 1, it is characterised in that: in step A3, specifically include step:
A31 pastes fluorescent adhesive layer in the first encapsulation film surface；
Fluorescent powder in fluorescent adhesive layer is precipitated to bottom, and then form the fluorescent glue of understructure by centrifugation by A32
The transparent silicon glue-line of layer and superstructure.
6. LED encapsulation method according to claim 1, it is characterised in that: in step A3, specifically include step:
A31 pastes the fluorescent adhesive layer of understructure in the first encapsulation film surface；
A32 pastes the transparent silicon glue-line of superstructure on the surface of the fluorescent adhesive layer of understructure.
7. LED encapsulation method according to claim 1, it is characterised in that: further include step between step A3 and step A4
It is rapid:
A3-4-1 carries out the packaging body for completing step A3 to be baked to the first encapsulation glue-line and the second encapsulation curable adhesive layer；
A3-4-2 carries out photoelectric parameter detection.
8. LED encapsulation method according to claim 1, it is characterised in that: the package support is with bowl or box dam
Package support, the LED chip, first encapsulation glue-line, second encapsulation glue-line and third encapsulation glue-line be all set in bowl or
In box dam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910576226.9A CN110323320A (en) | 2019-06-28 | 2019-06-28 | A kind of LED encapsulation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910576226.9A CN110323320A (en) | 2019-06-28 | 2019-06-28 | A kind of LED encapsulation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110323320A true CN110323320A (en) | 2019-10-11 |
Family
ID=68120546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910576226.9A Pending CN110323320A (en) | 2019-06-28 | 2019-06-28 | A kind of LED encapsulation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110323320A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966775A (en) * | 2015-07-07 | 2015-10-07 | 宏齐光电子(深圳)有限公司 | White light LED and white light LED manufacturing method |
| CN106876561A (en) * | 2017-03-14 | 2017-06-20 | 河北利福光电技术有限公司 | A kind of long-distance fluorescent powder encapsulating structure and its implementation |
| CN107706284A (en) * | 2017-09-12 | 2018-02-16 | 厦门多彩光电子科技有限公司 | A kind of LED encapsulation method and encapsulating structure |
| CN109192722A (en) * | 2018-08-07 | 2019-01-11 | 东莞中之光电股份有限公司 | A kind of LED flip chip packaging technology |
| CN109449276A (en) * | 2018-09-28 | 2019-03-08 | 苏州星烁纳米科技有限公司 | Light emitting device |
-
2019
- 2019-06-28 CN CN201910576226.9A patent/CN110323320A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966775A (en) * | 2015-07-07 | 2015-10-07 | 宏齐光电子(深圳)有限公司 | White light LED and white light LED manufacturing method |
| CN106876561A (en) * | 2017-03-14 | 2017-06-20 | 河北利福光电技术有限公司 | A kind of long-distance fluorescent powder encapsulating structure and its implementation |
| CN107706284A (en) * | 2017-09-12 | 2018-02-16 | 厦门多彩光电子科技有限公司 | A kind of LED encapsulation method and encapsulating structure |
| CN109192722A (en) * | 2018-08-07 | 2019-01-11 | 东莞中之光电股份有限公司 | A kind of LED flip chip packaging technology |
| CN109449276A (en) * | 2018-09-28 | 2019-03-08 | 苏州星烁纳米科技有限公司 | Light emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN212277195U (en) | High-color rendering index and high-light efficiency packaging body | |
| CN101740707B (en) | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode | |
| CN101661987A (en) | White light LED packaging structure and packaging method thereof | |
| CN102244165A (en) | LED encapsulation process | |
| CN101369614A (en) | Packaging structure and method for high power white light LED | |
| CN103715188B (en) | LED emitter with improved white appearance | |
| CN101123286A (en) | LED encapsulation structure and method | |
| CN102130282A (en) | Packaging structure and packaging method for white LED (light-emitting diode) | |
| CN102683555A (en) | Packaging structure and packaging method for light-emitting diode | |
| CN106935693A (en) | Luminous quantum dot CSP backlights in a kind of five face and preparation method thereof | |
| CN107331753A (en) | High colour gamut white light LEDs and backlight module | |
| CN103258940B (en) | A kind of method for packing of all solid state white light emitting diode | |
| WO2019095463A1 (en) | Magnetic fluorescent powder composite and plane coating method therefor | |
| CN102891235B (en) | High-output low-attenuation white light LED (light emitting diode) and manufacturing method thereof | |
| CN105870294B (en) | A kind of encapsulating method and structure of high-capacity LED | |
| CN107946433A (en) | A kind of white light LEDs | |
| CN110323320A (en) | A kind of LED encapsulation method | |
| CN204045626U (en) | Chip-packaging structure on the light-emitting diode panel of many races array | |
| CN208690289U (en) | A kind of LED lamp bead | |
| CN207303133U (en) | A kind of height of adjustable colour rendering index shows COB light source device | |
| CN109301053A (en) | A kind of quantum dot LED encapsulation structure and its manufacturing method | |
| CN110323321A (en) | A kind of LED lamp bead and LED lamp | |
| CN205231108U (en) | White light LED wafer packaging structure | |
| CN104851953A (en) | Dimmable LED packaging structure | |
| CN201181712Y (en) | Light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191011 |
|
| RJ01 | Rejection of invention patent application after publication |