CN110313058B - 表面检验系统及方法 - Google Patents

表面检验系统及方法 Download PDF

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Publication number
CN110313058B
CN110313058B CN201880009158.1A CN201880009158A CN110313058B CN 110313058 B CN110313058 B CN 110313058B CN 201880009158 A CN201880009158 A CN 201880009158A CN 110313058 B CN110313058 B CN 110313058B
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China
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particles
defective
particle
detected
activated
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Chinese (zh)
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CN110313058A (zh
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K·哈勒尔
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

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  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201880009158.1A 2017-01-30 2018-01-26 表面检验系统及方法 Active CN110313058B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/419,355 US10551320B2 (en) 2017-01-30 2017-01-30 Activation of wafer particle defects for spectroscopic composition analysis
US15/419,355 2017-01-30
PCT/US2018/015570 WO2018140805A1 (en) 2017-01-30 2018-01-26 Activation of wafer particle defects for spectroscopic composition analysis

Publications (2)

Publication Number Publication Date
CN110313058A CN110313058A (zh) 2019-10-08
CN110313058B true CN110313058B (zh) 2022-06-28

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Application Number Title Priority Date Filing Date
CN201880009158.1A Active CN110313058B (zh) 2017-01-30 2018-01-26 表面检验系统及方法

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US (1) US10551320B2 (https=)
EP (1) EP3549160B1 (https=)
JP (1) JP6916886B2 (https=)
KR (1) KR102353259B1 (https=)
CN (1) CN110313058B (https=)
SG (1) SG11201906281RA (https=)
TW (1) TWI764979B (https=)
WO (1) WO2018140805A1 (https=)

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CN111879749B (zh) * 2020-07-23 2023-02-14 西安近代化学研究所 压装pbx炸药柱中nto晶体品质表征方法
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KR102501486B1 (ko) * 2020-12-10 2023-02-17 한국화학연구원 나노 입자 또는 나노 구조체에서 발생된 분광 신호 분석 시스템 및 분석 방법
US11879853B2 (en) * 2021-02-19 2024-01-23 Kla Corporation Continuous degenerate elliptical retarder for sensitive particle detection
CN113884443A (zh) * 2021-05-19 2022-01-04 北京航空航天大学 基于磁光克尔效应的磁性晶圆大视野成像方法和成像装置
CN114544208A (zh) * 2021-11-04 2022-05-27 万向一二三股份公司 一种超声焊接机稳定性检测装置和方法
KR102602029B1 (ko) * 2021-11-11 2023-11-14 주식회사 에타맥스 광루미네선스 검사와 자동광학검사를 동시에 수행하는 마이크로 led 검사장비
TWI833390B (zh) * 2022-02-23 2024-02-21 南亞科技股份有限公司 製造缺陷原因之識別系統以及非暫時性電腦可讀媒體
US12118709B2 (en) 2022-02-23 2024-10-15 Nanya Technology Corporation Method for identifying cause of manufacturing defects
US12175652B2 (en) 2022-02-23 2024-12-24 Nanya Technology Corporation System and non-transitory computer-readable medium for identifying cause of manufacturing defects
CN117092075A (zh) * 2022-05-11 2023-11-21 深圳中科飞测科技股份有限公司 一种支持多检测模式的激光检测装置
KR102781411B1 (ko) * 2022-11-03 2025-03-17 한국기계연구원 필터 교체형 플라즈마 모니터링 시스템 및 이를 이용한 플라즈마 모니터링 방법
CN116660285B (zh) * 2023-07-26 2023-11-17 浙江大学 一种晶圆特征光谱在线检测装置
FR3155632B1 (fr) * 2023-11-21 2025-11-07 Soitec Silicon On Insulator procédé de fabrication d’une structure composite incluant une étape de gradation
TWI900052B (zh) * 2024-06-07 2025-10-01 鏵友益科技股份有限公司 晶圓辨識裝置

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Also Published As

Publication number Publication date
TWI764979B (zh) 2022-05-21
US10551320B2 (en) 2020-02-04
EP3549160A4 (en) 2020-07-08
KR20190104628A (ko) 2019-09-10
EP3549160A1 (en) 2019-10-09
KR102353259B1 (ko) 2022-01-18
US20180217065A1 (en) 2018-08-02
SG11201906281RA (en) 2019-08-27
CN110313058A (zh) 2019-10-08
JP6916886B2 (ja) 2021-08-11
JP2020505607A (ja) 2020-02-20
TW201832304A (zh) 2018-09-01
EP3549160B1 (en) 2022-01-05
WO2018140805A1 (en) 2018-08-02

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