CN110310985A - A kind of indium aluminium zinc oxide film transistor and preparation method thereof based on double active layers - Google Patents
A kind of indium aluminium zinc oxide film transistor and preparation method thereof based on double active layers Download PDFInfo
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- CN110310985A CN110310985A CN201910601920.1A CN201910601920A CN110310985A CN 110310985 A CN110310985 A CN 110310985A CN 201910601920 A CN201910601920 A CN 201910601920A CN 110310985 A CN110310985 A CN 110310985A
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- 229910052738 indium Inorganic materials 0.000 title claims abstract description 27
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 27
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000007789 gas Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 230000001105 regulatory effect Effects 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 230000036541 health Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000012459 cleaning agent Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 71
- 230000007547 defect Effects 0.000 description 9
- 239000000523 sample Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018516 Al—O Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 125000005329 tetralinyl group Chemical group C1(CCCC2=CC=CC=C12)* 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
The present invention relates to a kind of indium aluminium zinc oxide film transistor and preparation method thereof based on double active layers, including substrate, the double active layers, source electrode and drain electrode set gradually from bottom to top, double active layers include setting gradually first layer IAZO film and second layer IAZO film from bottom to top, source electrode and drain electrode is arranged on second layer IAZO film, and preparation method includes: that (1) grows first layer IAZO film on substrate；(2) second layer IAZO film is grown on first layer IAZO film；(3) on second layer IAZO film grow source electrode and drain electrode to get.Preparation method provided by the invention does not need to carry out the processing of any regulation active layer carrier concentration such as thermal annealing, and informative data is reliable, and experimental repeatability is strong；The indium aluminium zinc oxide film transistor of preparation has high electric property, while having high saturation mobility, high switching current ratio, low threshold voltage and low subthreshold swing.
Description
Technical field
The present invention relates to a kind of indium aluminium zinc oxide film transistor and preparation method thereof based on double active layers belongs to half
Conductor material and device arts.
Background technique
Along with the great market demand to high-resolution, high switching speed, large-sized monitor, active matrix liquid crystal is aobvious
The technology of showing obtains significant progress.It is shown compared to traditional passive liquid crystal, each liquid crystal pixel list that active liquid crystal is shown
Member is all driven by a thin film transistor (TFT) (TFT), this can significantly improve the resolution ratio of display.In recent years, transparent gold
Belong to oxide thin film transistor because having good optically and electrically performance, is shown in next-generation display technology greatly
Application prospect, thus by the concern of people.Wherein indium gallium zinc oxide (IGZO) TFT of amorphous is because having high electron mobility
Rate, low preparation temperature, transparent, can be flexible the advantages that and be widely studied, and it is possible to replace silicon substrate TFT in the field of display
Status.Although IGZO TFT shows preferable performance, stability under the conditions ofs bias and illumination etc. and can
Its large-scale commercial applications is still greatlyed restrict by property.Moreover, from the current study, this is likely to be people
The problem that can not be overcome.Therefore, we are highly desirable to continually look for and study more suitable metal oxide materials.Fortunately
Fortune, indium aluminium zinc oxide (IAZO) are found to be a kind of novel TFT active layer material that can substitute IGZO.Before us
Result of study show IAZO TFT not only electric property with higher, while also showing good stability
[W.Xu,J.Jiang,S.Xu,Y.Zhang,H.Xu,L.Han,and X.Feng,Effect of substrate
temperature on sputtered indium-aluminum-zinc oxide films and thin film
transistors,J.Alloys Comp.,791,773-778,2019.]。
IAZO is one kind by In2O3、Al2O3The alloy formed with tri- kinds of materials of ZnO, band gap can be in~2.9-8.7eV
Between change, modulation range much larger than IGZO~2.9-4.9eV [W.Xu, M.Xu, J.Jiang, S.Xu, and X.Feng,
Impact of sputtering power on amorphous In-Al-Zn-O films and thin film
transistors prepared by RF magnetron sputtering,IEEE Trans.Electron Devices,
66,2219-2223,2019.].Therefore, compared to IGZO, the band gap of IAZO is wider and modulation range is wider, is conducive to improve it
The stability of TFT device performance under light illumination.Moreover, Al-O key ratio Ga-O key has higher combination energy, be conducive to active
The carrier concentration of layer carries out Effective Regulation and improves the stability of TFT electric property.Further, since avoiding rare metal
The use of element Ga, IAZO also have certain advantage in terms of the production cost for reducing device.
However, being splashed although people have carried out certain research to IAZO TFT at present especially by radio frequency magnetron
Penetrate the IAZO TFT that technique has prepared function admirable.But the preparation process for the IAZO TFT being had been reported that at present requires
It is performed for more than 1 hour thermal anneal process, and annealing temperature is generally in the range of 225 DEG C to 500 DEG C.It is reported that
Other than PI flexible substrate, for other flexible substrates because being limited by its glass transition temperature, operating temperature is below 225 DEG C.This
Mean to be difficult to be prepared IAZO TFT flexible with current technique.Therefore, find it is a kind of can be in low temperature or even room temperature
It is very necessary that the method for high-performance IAZO TFT is prepared under environment.
The channel layer of double active layer structure TFT upper layer two parts group generally high by the low lower layer of resistivity and resistivity
At.Instantly when active layer resistivity is lower, it is meant that thin intramembrane carrier concentration is higher, this advantageously reduce boundary defect and
The influence of potential barrier during electron motion, to obtain higher mobility and on-state current.When upper active layer is with higher
When resistivity, the off-state current for reducing TFT is not only contributed to, to improve switching current ratio, and Lacking oxygen etc. lacks in film
The reduction for falling into content also advantageously improves the stability of TFT device performance.However, there is presently no any about double active layer knots
The relevant report of structure IAZO TFT research.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of indium aluminium zinc oxide film transistor based on double active layers
And preparation method thereof.
Term is explained:
1, radio-frequency magnetron sputter method refers on the basis of magnetron sputtering, makees the sputtering method of power supply using radio-frequency power supply.
The technical solution of the present invention is as follows:
A kind of indium aluminium zinc oxide film transistor based on double active layers, including set gradually from bottom to top substrate,
Double active layers, source electrode and drain electrode, double active layers include setting gradually first layer IAZO film and second from bottom to top
Layer IAZO film, the source electrode and drain electrode are arranged on the second layer IAZO film.
In the present invention, the channel layer of double active layer structure TFT includes the low first layer IAZO film and resistance of resistivity
The high second layer IAZO film of rate.When first layer IAZO film resiativity is lower, it is meant that thin intramembrane carrier concentration is higher,
This advantageously reduces the influence of potential barrier during boundary defect and electron motion, to obtain higher mobility and ON state electricity
Stream.When second layer IAZO film resistivity with higher, the off-state current for reducing TFT is not only contributed to, is opened to improve
Powered-down stream ratio, and the reduction of content also advantageously improves the stability of TFT device performance the defects of Lacking oxygen in film.
It is preferred according to the present invention, the first layer IAZO film with a thickness of 10-25nm；
It is further preferred that the first layer IAZO film with a thickness of 20nm.
First layer IAZO film is directly contacted with insulating layer, its growth quality decides containing for device median surface defect
Amount.Suitable first layer IAZO film thickness is conducive to improve thin intramembrane carrier concentration, and then it is less, high to obtain defect
The interface of quality, to be conducive to improve device electric property.
It is preferred according to the present invention, the second layer IAZO film with a thickness of 5-20nm；
It is further preferred that the second layer IAZO film with a thickness of 10nm.
The resistivity of second layer IAZO film is higher, and changing its thickness is that carrier is dense in the double IAZO active layers of Effective Regulation
The key of degree.If second layer IAZO film is thicker, the carrier concentration that will lead to double IAZO active layer entirety is relatively low, obtains
Device performance can be undesirable；If second layer IAZO film is relatively thin, and the carrier concentration of double IAZO active layer entirety can be caused
Excessively high, electron scattering increases, and device performance can reduce again.
Preferred according to the present invention, the thickness of the source electrode and drain electrode is 50nm, the source electrode and drain electrode
Material be Ti.
The work function of metal electrode Ti is lower, and good Ohmic contact can be formed between IAZO active layer, improves electricity
The drift motion of son, and then obtain higher device performance.Suitable thickness of electrode help to obtain stable device performance,
Reduce loss of the test probe to device.
Preferred according to the present invention, the channel dimensions between the source electrode and drain electrode: width is 1400-2000 μm, long
It is 30-100 μm；
It is further preferred that the channel dimensions between the source electrode and drain electrode are as follows: width is 2000 μm, a length of 60 μm.
Suitable channel dimensions advantageously reduce the self-heating effect in channel, improve the drift motion of electronics.
Preferred according to the present invention, the substrate is the SiO after polishing treatment2/P+- Si substrate, the SiO2/P+- Si lining
SiO in bottom2With a thickness of 80-300nm；
It is further preferred that the SiO2/P+SiO in-Si substrate2With a thickness of 100nm.
Substrate surface has polished, and is conducive to grow the higher IAZO active layer of flatness, and P+- Si can be directly used as
Bottom gate；The SiO of different-thickness2Dielectric layer is capable of providing capacitor of different sizes, and then shows different grid voltages to TFT and regulate and control
Ability, suitable SiO2Thickness help to obtain the excellent TFT of electric property.
The preparation method of the above-mentioned indium aluminium zinc oxide film transistor based on double active layers:
(1) first layer IAZO film is grown over the substrate；
(2) second layer IAZO film is grown on the first layer IAZO film；
(3) on the second layer IAZO film grow source electrode and drain electrode to get.
High performance IAZO TFT needs to guarantee to have suitable carrier concentration in active layer.In the present invention, pass through
Using double IAZO active layer structures with different resistivity, effective tune of carrier concentration is successfully realized at room temperature
Control, obtains high performance IAZO TFT.
It is preferred according to the present invention, in step (1), first layer is grown over the substrate using radio-frequency magnetron sputter method
IAZO film, comprises the following steps that
A, rf magnetron sputtering chamber door is opened, the substrate, IAZO ceramic target are put into, closes chamber door；
B, it vacuumizes, until vacuum degree is lower than 1 × 10 in chamber-5Torr；
C, it is passed through high-purity Ar gas in chamber, stops inflation after 1-2 minutes, this operation repeats 2-4 times；
D, setting sputtering power is 50-150W, is passed through high-purity Ar gas, and regulating gas flow velocity to 10-25SCCM keeps room
Interior operating air pressure is 3.20-3.80mTorr, and underlayer temperature is 20-25 DEG C；
E, it sputters 5-15 minutes；It is 30 minutes cooling after sputtering；
It is further preferred that
In the step C, it is passed through high-purity Ar gas in chamber, stops inflation after 1 minute, this operation is repeated 3 times；
In the step D, setting sputtering power is 90W, is passed through high-purity Ar gas, and regulating gas flow velocity to 20SCCM is protected
Holding office work air pressure is 3.68mTorr, and underlayer temperature is 23 DEG C；
In the step E, 8 points are sputtered 54 seconds.
Using the preparation process of radio-frequency magnetron sputter method, it can prepare that close with target component, fine and close, homogeneity is good
Semiconductor film material, it is mutually compatible with existing FPD technique, be conducive to the room temperature preparation of IAZO TFT；Suitable growth
Condition is conducive to the IAZO active layer for obtaining function admirable at room temperature.
It is preferred according to the present invention, it is raw on the first layer IAZO film using radio-frequency magnetron sputter method in step (2)
Long second layer IAZO film, comprises the following steps that
A, the Ar/O that oxygen concentration is 0.75% is passed through in chamber2Mixed gas stops inflation after 1-2 minutes, this behaviour
Make to repeat 2-4 times；
B, setting sputtering power is 50-150W, is passed through the Ar/O that oxygen concentration is 0.75%2Mixed gas, regulating gas
For flow velocity to 10-25SCCM, holding office work air pressure is 3.20-3.80mTorr, and underlayer temperature is 20-25 DEG C；
C, it sputters 3-10 minutes, closes shielding power supply；
D, wait 20 minutes or more, sample is taken out, instrument is closed, sputtering process terminates；
It is further preferred that
In the step A, the Ar/O that oxygen concentration is 0.75% is passed through in chamber2Mixed gas stopped filling after 1 minute
Gas, this operation are repeated 3 times；
In the step B, setting sputtering power is 90W, is passed through the Ar/O that oxygen concentration is 0.75%2Mixed gas is adjusted
For throttle body flow velocity to 20SCCM, holding office work air pressure is 3.65mTorr, and underlayer temperature is 23 DEG C；
It in the step C, sputters 5 minutes, closes shielding power supply；
In the step D, after waiting 30 minutes, sample is taken out, closes instrument, sputtering process terminates.
Preferred according to the present invention, in step (1), the substrate surface using enlightening health (Decon) before use, successively cleaned
Agent, deionized water, acetone, ethyl alcohol clean the substrate, finally using being dried with nitrogen.
Cleaning after substrate polishing can effectively improve the cleannes of substrate surface, so that growth flatness is higher double
IAZO active layer promotes the performance of IAZO TFT.
The invention has the benefit that
1. the preparation method of the indium aluminium zinc oxide film transistor provided by the invention based on double IAZO active layers is not required to
The processing of any regulation active layer carrier concentration such as thermal annealing is carried out, informative data is reliable, and experimental repeatability is strong.
2. coarse by atomic force microscope (AFM) test it is found that double IAZO active layer surfaces of this method growth are smooth
Spend low (0.25nm).
3. the present invention is combined by exploring and optimizing lower layer with the different-thickness of upper layer IAZO film, made in room temperature environment
It is standby gone out the IAZO TFT of function admirable.
4. IAZO TFT produced by the present invention shows high electric property, while having high saturation mobility
(12.05cm2/ Vs), high switching current ratio (1.05 × 108), low threshold voltage (4.10V) and low subthreshold swing (0.93V/
dec).The IAZO TFT that these outstanding performance parameters prepare this method has in the following Flexible Displays and integrated circuit
Wide application prospect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram based on double active layer IAZO TFT；
Fig. 2 is the AFM figure of double IAZO active layers；
Fig. 3 is the curve of output based on double active layer IAZO TFT；
Fig. 4 is the transfer curve based on double active layer IAZO TFT.
Specific embodiment
Below with reference to embodiment and Figure of description, the present invention will be further described, but not limited to this.
Embodiment 1
A kind of indium aluminium zinc oxide film transistor based on double active layers, including set gradually from bottom to top substrate,
Double active layers, source electrode and drain electrode, double active layers include setting gradually first layer IAZO film and the second layer from bottom to top
IAZO film, source electrode and drain electrode are grown on second layer IAZO film.
In the present invention, the channel layer of double active layer structure TFT includes the low first layer IAZO film and resistance of resistivity
The high second layer IAZO film of rate.When first layer IAZO film resiativity is lower, it is meant that thin intramembrane carrier concentration is higher,
This advantageously reduces the influence of potential barrier during boundary defect and electron motion, to obtain higher mobility and ON state electricity
Stream.When second layer IAZO film resistivity with higher, the off-state current for reducing TFT is not only contributed to, is opened to improve
Powered-down stream ratio, and the reduction of content is more advantageous to the stability for improving TFT device performance the defects of Lacking oxygen in film.
First layer IAZO film with a thickness of 10-25nm；First layer IAZO film is directly contacted with insulating layer, its growth
Quality decides the content of device median surface defect.Suitable first layer IAZO film thickness is conducive to improve current-carrying in film
Sub- concentration, and then obtain that defect is less, interface of high quality, to be conducive to improve device electric property.
Second layer IAZO film with a thickness of 5-20nm；The resistivity of second layer IAZO film is higher, and changing its thickness is
The key of carrier concentration in the double IAZO active layers of Effective Regulation.If second layer IAZO film is thicker, will lead to double IAZO has
The carrier concentration of active layer entirety is relatively low, and obtained device performance can be undesirable；If second layer IAZO film is relatively thin, and it can draw
The carrier concentration for playing double IAZO active layer entirety is excessively high, and electron scattering increases, and device performance can reduce again.
The thickness of source electrode and drain electrode is 50nm, and the material of source electrode and drain electrode is Ti.Metal electrode Ti's
Work function is lower, and good Ohmic contact can be formed between IAZO active layer, improves the drift motion of electronics, and then obtain
Higher device performance.Suitable thickness of electrode help to obtain stable device performance, reduces test probe to the damage of device
Consumption.
Channel dimensions between source electrode and drain electrode: width is 1400-2000 μm, a length of 30-100 μm；Suitable channel
Size advantageously reduces the self-heating effect in channel, improves the drift motion of electronics.
Substrate is the SiO after polishing treatment2/P+- Si substrate, SiO2/P+SiO in-Si substrate2With a thickness of 80-300nm；
Substrate surface has polished, and is conducive to grow the higher IAZO active layer of flatness, and P+- Si can be directly used as bottom gate；No
The SiO of stack pile2Dielectric layer is capable of providing capacitor of different sizes, and then different grid voltage abilities of regulation and control is shown to TFT, closes
Suitable SiO2Thickness help to obtain the excellent TFT of electric property.
Embodiment 2
A kind of indium aluminium zinc oxide film transistor based on double active layers, distinguishes it according to provided by embodiment 1
Be in:
First layer IAZO film with a thickness of 20nm；
Second layer IAZO film with a thickness of 10nm；
Channel dimensions between source electrode and drain electrode are as follows: width is 2000 μm, a length of 60 μm；
SiO2/P+SiO in-Si substrate2With a thickness of 100nm.
Embodiment 3
A kind of preparation method of the indium aluminium zinc oxide film transistor based on double active layers provided by embodiment 2:
(1) first layer IAZO film is grown on substrate；
(2) second layer IAZO film is grown on first layer IAZO film；
(3) use electron beam evaporation, on second layer IAZO film grow source electrode and drain electrode to get.
High performance IAZO TFT needs to guarantee to have suitable carrier concentration in active layer.In the present invention, pass through
Using double IAZO active layer structures with different resistivity, effective tune of carrier concentration is successfully realized at room temperature
Control, obtains high performance IAZO TFT.
In step (1), substrate is before use, successively using enlightening health (Decon) cleaning agent, deionized water, acetone, ethyl alcohol to lining
Bottom is cleaned, finally using being dried with nitrogen.Cleaning after substrate polishing can effectively improve the cleannes of substrate surface, in favor of
The higher double IAZO active layers of flatness are grown, the performance of IAZO TFT is promoted.
In step (1), grows first layer IAZO film on substrate using radio-frequency magnetron sputter method, comprise the following steps that
A, rf magnetron sputtering chamber door is opened, substrate, IAZO ceramic target are put into, closes chamber door；
B, it vacuumizes, until vacuum degree is lower than 1 × 10 in chamber-5Torr；
C, it is passed through high-purity Ar gas in chamber, stops inflation after 1-2 minutes, this operation repeats 2-4 times；
D, setting sputtering power is 50-150W, is passed through high-purity Ar gas, and regulating gas flow velocity to 10-25SCCM keeps room
Interior operating air pressure is 3.20-3.80mTorr, and underlayer temperature is 20-25 DEG C；
E, it sputters 5-15 minutes；It is 30 minutes cooling after sputtering.
Using the preparation process of radio-frequency magnetron sputter method, it can prepare that close with target component, fine and close, homogeneity is good
Semiconductor film material, it is mutually compatible with existing FPD technique, be conducive to the room temperature preparation of IAZO TFT；Suitable growth
Condition is conducive to the IAZO active layer for obtaining function admirable at room temperature.
In step (2), second layer IAZO film is grown on first layer IAZO film using radio-frequency magnetron sputter method, including
Steps are as follows:
A, the Ar/O that oxygen concentration is 0.75% is passed through in chamber2Mixed gas stops inflation after 1-2 minutes, this behaviour
Make to repeat 2-4 times；
B, setting sputtering power is 50-150W, is passed through the Ar/O that oxygen concentration is 0.75%2Mixed gas, regulating gas
For flow velocity to 10-25SCCM, holding office work air pressure is 3.20-3.80mTorr, and underlayer temperature is 20-25 DEG C；
C, it sputters 3-10 minutes, closes shielding power supply；
D, wait 20 minutes or more, sample is taken out, instrument is closed, sputtering process terminates.
Embodiment 4
A kind of preparation side of the indium aluminium zinc oxide film transistor based on double active layers according to provided by embodiment 3
Method, difference are:
In step (1), grows first layer IAZO film on substrate using radio-frequency magnetron sputter method, comprise the following steps that
In step C, it is passed through high-purity Ar gas in chamber, stops inflation after 1 minute, this operation is repeated 3 times；
In step D, setting sputtering power is 90W, is passed through high-purity Ar gas, and regulating gas flow velocity to 20SCCM keeps room
Interior operating air pressure is 3.68mTorr, and underlayer temperature is 23 DEG C；
In step E, 8 points are sputtered 54 seconds；
In step (2), second layer IAZO film is grown on first layer IAZO film using radio-frequency magnetron sputter method, including
Steps are as follows:
In step A, the Ar/O that oxygen concentration is 0.75% is passed through in chamber2Mixed gas stops inflation after 1 minute,
This operation is repeated 3 times；
In step B, setting sputtering power is 90W, is passed through the Ar/O that oxygen concentration is 0.75%2Mixed gas adjusts gas
For body flow velocity to 20SCCM, holding office work air pressure is 3.65mTorr, and underlayer temperature is 23 DEG C；
It in step C, sputters 5 minutes, closes shielding power supply；
In step D, after waiting 30 minutes, sample is taken out, closes instrument, sputtering process terminates.
The surface topography for the IAZO active layer that this method is prepared and electricity based on double active layer IAZO TFT
Performance is detected, analyzed and is characterized；
Structure based on double active layer IAZO TFT is suitble to as shown in Figure 1, by above step it is found that preparation process is simple
Industrial application.
Double IAZO active layer surface patterns, scanning are measured by atomic force microscope (model Benyuan CSPM5500)
Mode is tapping-mode, and scanning range is 2 μm of 2 μ m；As shown in Fig. 2, the surface roughness of output IAZO active layer is only
0.25nm has good flatness.
Electrical performance testing is carried out to based on double active layer IAZO TFT with Agilent B2900 semiconductor analysis instrument.It is right
Indium aluminium zinc oxide film transistor based on double active layers carries out output characteristics test, as shown in Figure 3, wherein ordinate is
Drain current (IDS), abscissa is drain voltage (VDS), VDSVariation range be 0~35V, grid voltage (VGS) variation model
Enclosing is -20~40V；Curve a, b, c, d, e, f, g respectively indicate VGSIt is defeated when for -20V, -10V, 0V, 10V, 20V, 30V, 40V
Curve out, tetra- lines of a, b, c and d essentially coincide.Fig. 3 shows: prepared IAZO TFT has good Ohmic contact and defeated
Characteristic out, the maximum output current under 40V grid voltage are more than 5mA.
Transfer curve based on double active layer IAZO TFT is measured using Agilent B2900 semiconductor analysis instrument, such as
Shown in Fig. 4, wherein ordinate IDS, abscissa VGS, VDSSize be set as 25V, VGSVariation range be -20~40V.
Wherein solid line and dotted line respectively represent the transfer curve under logarithmic coordinates and non-logarithmic coordinate.It is excellent that Fig. 4 shows that IAZO TFT has
Good transfer characteristic and switch performance, on-state current especially with higher.
The indium aluminium zinc oxide film transistor based on double active layers of preparation, every electrology characteristic parameter are as shown in table 1:
Table 1
Table 1 is every characterisitic parameter of IAZO TFT, and when first layer IAZO film is with a thickness of 20nm, second layer IAZO is thin
Film with a thickness of 10nm when, IAZO TFT shows excellent electric property, has high saturation mobility (12.05cm2/
Vs), high switching current ratio (1.05 × 108), low threshold voltage (4.10V) and low subthreshold swing (0.93V/dec).
Claims (10)
1. a kind of indium aluminium zinc oxide film transistor based on double active layers, which is characterized in that including successively setting from bottom to top
Substrate, the double active layers, source electrode and drain electrode set, double active layers are thin including setting gradually first layer IAZO from bottom to top
Film and second layer IAZO film, the source electrode and drain electrode are arranged on the second layer IAZO film.
2. a kind of indium aluminium zinc oxide film transistor based on double active layers according to claim 1, which is characterized in that
The first layer IAZO film with a thickness of 10-25nm；
It is further preferred that the first layer IAZO film with a thickness of 20nm.
3. a kind of indium aluminium zinc oxide film transistor based on double active layers according to claim 1, which is characterized in that
The second layer IAZO film with a thickness of 5-20nm；
It is further preferred that the second layer IAZO film with a thickness of 10nm.
4. a kind of indium aluminium zinc oxide film transistor based on double active layers according to claim 1, which is characterized in that
The thickness of the source electrode and drain electrode is 50nm, and the material of the source electrode and drain electrode is Ti.
5. a kind of indium aluminium zinc oxide film transistor based on double active layers according to claim 1, which is characterized in that
Channel dimensions between the source electrode and drain electrode: width is 1400-2000 μm, a length of 30-100 μm；
It is further preferred that the channel dimensions between the source electrode and drain electrode are as follows: width is 2000 μm, a length of 60 μm.
6. a kind of indium aluminium zinc oxide film transistor based on double active layers according to claim 1, which is characterized in that
The substrate is the SiO after polishing treatment2/P+- Si substrate, the SiO2/P+SiO in-Si substrate2With a thickness of 80-300nm；
It is further preferred that the SiO2/P+SiO in-Si substrate2With a thickness of 100nm.
7. the preparation side of the indium aluminium zinc oxide film transistor according to claim 1-6 based on double active layers
Method, it is characterised in that:
(1) first layer IAZO film is grown over the substrate；
(2) second layer IAZO film is grown on the first layer IAZO film；
(3) on the second layer IAZO film grow source electrode and drain electrode to get.
8. the preparation method of the indium aluminium zinc oxide film transistor according to claim 7 based on double active layers, special
Sign is, in step (1), grows first layer IAZO film over the substrate using radio-frequency magnetron sputter method, including step is such as
Under:
A, rf magnetron sputtering chamber door is opened, the substrate, IAZO ceramic target are put into, closes chamber door；
B, it vacuumizes, until vacuum degree is lower than 1 × 10 in chamber-5Torr；
C, it is passed through high-purity Ar gas in chamber, stops inflation after 1-2 minutes, this operation repeats 2-4 times；
D, setting sputtering power is 50-150W, is passed through high-purity Ar gas, and regulating gas flow velocity to 10-25SCCM keeps indoor work
Making air pressure is 3.20-3.80mTorr, and underlayer temperature is 20-25 DEG C；
E, it sputters 5-15 minutes；It is 30 minutes cooling after sputtering；
It is further preferred that
In the step C, it is passed through high-purity Ar gas in chamber, stops inflation after 1 minute, this operation is repeated 3 times；
In the step D, setting sputtering power is 90W, is passed through high-purity Ar gas, and regulating gas flow velocity to 20SCCM keeps room
Interior operating air pressure is 3.68mTorr, and underlayer temperature is 23 DEG C；
In the step E, 8 points are sputtered 54 seconds.
9. the preparation method of the indium aluminium zinc oxide film transistor according to claim 8 based on double active layers, special
Sign is, in step (2), second layer IAZO film is grown on the first layer IAZO film using radio-frequency magnetron sputter method,
It comprises the following steps that
A, the Ar/O that oxygen concentration is 0.75% is passed through in chamber2Mixed gas stops inflation after 1-2 minutes, this operation repeats
2-4 times；
B, setting sputtering power is 50-150W, is passed through the Ar/O that oxygen concentration is 0.75%2Mixed gas, regulating gas flow velocity is extremely
10-25SCCM, holding office work air pressure are 3.20-3.80mTorr, and underlayer temperature is 20-25 DEG C；
C, it sputters 3-10 minutes, closes shielding power supply；
D, wait 20 minutes or more, sample is taken out, instrument is closed, sputtering process terminates；
It is further preferred that
In the step A, the Ar/O that oxygen concentration is 0.75% is passed through in chamber2Mixed gas stops inflation after 1 minute, this
Operation is repeated 3 times；
In the step B, setting sputtering power is 90W, is passed through the Ar/O that oxygen concentration is 0.75%2Mixed gas, regulating gas
For flow velocity to 20SCCM, holding office work air pressure is 3.65mTorr, and underlayer temperature is 23 DEG C；
It in the step C, sputters 5 minutes, closes shielding power supply；
In the step D, after waiting 30 minutes, sample is taken out, closes instrument, sputtering process terminates.
10. the preparation method of the indium aluminium zinc oxide film transistor according to claim 7 based on double active layers, special
Sign is, in step (1), the substrate surface is before use, successively using enlightening health cleaning agent, deionized water, acetone, ethyl alcohol to institute
It states substrate to be cleaned, finally using being dried with nitrogen.
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