CN110289306A - Semiconductor device and control device - Google Patents
Semiconductor device and control device Download PDFInfo
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- CN110289306A CN110289306A CN201810958970.0A CN201810958970A CN110289306A CN 110289306 A CN110289306 A CN 110289306A CN 201810958970 A CN201810958970 A CN 201810958970A CN 110289306 A CN110289306 A CN 110289306A
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
- H02P7/06—Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual dc dynamo-electric motor by varying field or armature current
- H02P7/18—Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual dc dynamo-electric motor by varying field or armature current by master control with auxiliary power
- H02P7/24—Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual dc dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices
- H02P7/28—Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual dc dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices using semiconductor devices
- H02P7/285—Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual dc dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices using semiconductor devices controlling armature supply only
- H02P7/292—Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual dc dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices using semiconductor devices controlling armature supply only using static converters, e.g. AC to DC
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Embodiments of the present invention generally relate to semiconductor device and control devices.According to one embodiment, semiconductor device has the 3rd semiconductor regions, conductive part, gate electrode and the control device of the 1st semiconductor regions of the 1st conductivity type, the 2nd semiconductor regions of the 2nd conductivity type, the 1st conductivity type.Control device carries out the 1st movement, the 2nd movement, the 3rd movement and the 4th movement.In the 1st movement, make 2nd current potential of the current potential of conductive part from the 1st potential change higher than the 1st current potential.In the 2nd movement, make 4th current potential of the current potential of gate electrode from the 3rd potential change higher than the 3rd current potential.In the 3rd movement after the 1st movement and the 2nd movement, make the current potential of gate electrode from the 3rd current potential of the 4th potential change.In the 4th movement after the 3rd movement, make the current potential of conductive part from the 1st current potential of the 2nd potential change.
Description
Association request
The application enjoyment is applied based on Japanese patent application 2018-50831 (applying date: on March 19th, 2018)
Priority.The application applies and the contents of the whole including basis application by referring to the basis.
Technical field
Embodiments of the present invention generally relate to semiconductor device and control devices.
Background technique
The semiconductor of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) etc. fills
Set the purposes for being used for power converter etc..Wish that the consumption electric power of semiconductor device is lower.
Summary of the invention
Embodiments of the present invention provide the semiconductor device and its control device that can reduce consumption electric power.
According to one embodiment, semiconductor device has semiconductor element and control device.Above-mentioned semiconductor element tool
Have the 1st semiconductor regions of the 1st conductivity type, the 2nd semiconductor regions of the 2nd conductivity type, the 1st conductivity type the 3rd semiconductor regions,
Conductive part, gate electrode and control device.Above-mentioned 2nd semiconductor regions are arranged on above-mentioned 1st semiconductor regions.Above-mentioned
3 semiconductor regions are arranged on a part of above-mentioned 2nd semiconductor regions.Above-mentioned conductive part is arranged across the 1st insulation division
In above-mentioned 1st semiconductor regions.Above-mentioned gate electrode is arranged on above-mentioned conductive part across the 2nd insulation division.Above-mentioned grid electricity
Pole with from the 2nd vertical direction of the 1st direction of above-mentioned 1st semiconductor regions towards above-mentioned 2nd semiconductor regions, and it is above-mentioned
At least part of a part of the 1st semiconductor regions, above-mentioned 2nd semiconductor regions and above-mentioned 3rd semiconductor regions is across grid
Pole insulation division and it is opposed.Above-mentioned control device is electrically connected with above-mentioned conductive part and above-mentioned gate electrode.Above-mentioned control device carries out
1st movement, the 2nd movement, the 3rd movement and the 4th movement.In above-mentioned 1st movement, make the current potential of above-mentioned conductive part from the 1st current potential
Variation is the 2nd current potential that absolute value is greater than above-mentioned 1st current potential.In above-mentioned 2nd movement, make the current potential of above-mentioned gate electrode from the
3 potential changes are the 4th current potential that absolute value is greater than above-mentioned 3rd current potential, and above-mentioned semiconductor element is switched on state.It is above-mentioned
3rd movement carries out after above-mentioned 1st movement and above-mentioned 2nd movement, in above-mentioned 3rd movement, makes the electricity of above-mentioned gate electrode
Position is above-mentioned 3rd current potential from above-mentioned 4th potential change, and above-mentioned semiconductor element is switched to off state.In above-mentioned 3rd movement
In above-mentioned 4th movement later, make the current potential of above-mentioned conductive part from above-mentioned above-mentioned 1st current potential of 2nd potential change.
Detailed description of the invention
Fig. 1 is the schematic diagram for indicating semiconductor device involved in embodiment.
Fig. 2 is to indicate that the solid of a part for the semiconductor element for including is cutd open in semiconductor device involved in embodiment
View.
Fig. 3 be include semiconductor device involved in embodiment electrical equipment circuit diagram.
Fig. 4 (a)~(d) is the schematic diagram for indicating the movement of electric circuit shown in Fig. 3.
Fig. 5 (a)~(c) is the schematic diagram for indicating the movement of electric circuit shown in Fig. 3.
Fig. 6 is the timing diagram for indicating the movement of electric circuit shown in Fig. 3.
Fig. 7 be include semiconductor device involved in embodiment other electrical equipments circuit diagram.
Fig. 8 (a)~(f) is the schematic diagram for indicating the movement of electric circuit shown in Fig. 7.
Fig. 9 is the timing diagram for indicating the movement of electric circuit shown in Fig. 7.
Specific embodiment
Hereinafter, being described with reference to the accompanying drawings for the embodiments of the present invention.
In addition, attached drawing is schematical or conceptual, between the relationship of the thickness of each section and width, part size
Ratio etc., may not be identical as in reality.In addition, even if there is also with reference to the accompanying drawings in the case where indicating identical part
And in the different mode of mutual size, ratio come the case where expression.
In addition, in this case specification and Ge Tu, to it is stated that the identical element of the element crossed marks same symbol, in detail
Thin explanation is suitably omitted.
In the following description and attached drawing, n+、n?And p+, p label indicate each conductivity type impurity concentration opposite height
It is low.That is, the label with "+" indicates, compared with the label for not having any of "+" and "-", impurity concentration is relatively high,
Label with "-" indicates that compared with the label for not having any one, impurity concentration is relatively low.
About each embodiment described below, the p-type of fifty-fifty conductive region and N-shaped can also be made to invert to implement each reality
Apply mode.
Fig. 1 is the schematic diagram for indicating semiconductor device involved in embodiment.
Fig. 2 is to indicate that the solid of a part for the semiconductor element for including is cutd open in semiconductor device involved in embodiment
View.
As shown in Figure 1, semiconductor device 100 involved in embodiment includes semiconductor element 1 and control device 2
(control circuitry).In the upper surface of semiconductor element 1 setting source electrode 32, pad electrode 33 and pad electrode
34.Source electrode 32, pad electrode 33 and pad electrode 34, it is disconnected from each other and electrically separated mutually.In semiconductor element 1
Drain electrode 31 is arranged in lower surface.Control device 2 is electrically connected with pad electrode 33 and pad electrode 34.
As shown in Fig. 2, semiconductor element 1 also has n?Type drift region 11 (the 1st semiconductor regions), p-type substrate region
12 (the 2nd semiconductor regions), n+Type source region 13 (the 3rd semiconductor regions), p+Type contact region 14, n+Type drain region 15,
Conductive part 20, the 1st insulation division 21, the 2nd insulation division 22 and gate electrode 25.
In the explanation of embodiment, XYZ orthogonal coordinate system is used.It will be from n?Type drift region 11 is towards p-type substrate area
The direction in domain 12 is set as Z-direction (the 1st direction).2 directions vertical and mutually orthogonal relative to Z-direction are set as X-direction the (the 2nd
Direction) and Y-direction (the 3rd direction).In addition, for ease of description, it will be from n?Type drift region 11 is towards p-type substrate region 12
Direction is known as "upper", its opposite direction is known as "lower".These directions are based on n?Type drift region 11 and p-type substrate region 12
Opposite positional relationship, it is unrelated with the direction of gravity.
n+Type drain region 15 is arranged on drain electrode 31, is electrically connected with drain electrode 31.n?Type drift region 11
It is arranged in n+On type drain region 15.P-type substrate region 12 is arranged in n?On type drift region 11.n+Type source region 13
And p+Type contact region 14 is arranged on p-type substrate region 12.
Conductive part 20 is arranged across the 1st insulation division 21 in n?In type drift region 11.Gate electrode 25 is across the 2nd insulation division
22 are arranged on conductive part 20.Gate electrode 25 in the X direction, with n?A part of type drift region 11, p-type substrate region
12 and n+At least part in type source region 13 is opposed across gate insulator portion 26.
Source electrode 32 and n+Type source region 13 and p+Type contact region 14 is electrically connected.The setting of insulating layer 27 is in grid electricity
Between pole 25 and source electrode 32.Conductive part 20 is electrically connected with pad electrode 33 shown in FIG. 1.Gate electrode 25 and pad electrode
34 electrical connections.
For example, p-type substrate region 12, n+Type source region 13, p+Type contact region 14, conductive part 20 and gate electrode 25
It is provided with multiple, and extends in the Y direction in the X direction respectively.
Control device 2 is electric with conductive part 20 and grid respectively via pad electrode 33 shown in FIG. 1 and pad electrode 34
Pole 25 is electrically connected.Control device 2 independently controls conductive part 20 and the respective current potential of gate electrode 25.
For example, the potential setting of gate electrode 25 is some current potential in the 3rd current potential and the 4th current potential by control device 2.
The absolute value of 4th current potential is greater than the absolute value of the 3rd current potential.The absolute value of 4th current potential is greater than for semiconductor element 1 to be switched to
The absolute value of the threshold value of on state.The absolute value of 3rd current potential is less than the absolute value of threshold value.The benchmark of current potential is for example set as source
The current potential of pole electrode 32.
For example, the absolute value of the current potential of drain electrode 31 is set to be greater than the absolute value of the current potential of source electrode 32.?
Under the state, when the current potential of gate electrode 25 is switched to 4 current potential from the 3rd current potential, in the gate insulator portion in p-type substrate region 12
Region near 26 forms channel (inversion layer), and semiconductor element 1 becomes on state.For example, electronics passes through channel from source electrode
Electrode 32 is flowed to drain electrode 31.Later, when the current potential applied to gate electrode 25 is switched to 3 current potential from the 4th current potential,
Channel in p-type substrate region 12 is eliminated, and semiconductor element 1 becomes off state.
The potential setting of conductive part 20 is some current potential in the 1st current potential and the 2nd current potential by control device 2.2nd current potential
Absolute value be greater than the 1st current potential absolute value.For example, the absolute value of the 2nd current potential is greater than the absolute value of above-mentioned threshold value.1st current potential
Absolute value be less than above-mentioned threshold value absolute value.1st current potential and the 3rd current potential are, for example, reference potential (ground connection).
For example, in the case where semiconductor element 1 is the MOS of n-channel type, the 4th current potential be the threshold value higher than the 3rd current potential with
On current potential.2nd current potential is the current potential of the threshold value higher than the 1st current potential or more.
In the case where semiconductor element 1 is the MOS of p-channel type, the 4th current potential is that the threshold value lower than the 3rd current potential is below
Current potential.2nd current potential is the threshold value below current potential lower than the 1st current potential.
An example of the material of each component of semiconductor element 1 is illustrated.
n?Type drift region 11, p-type substrate region 12, n+Type source region 13, p+Type contact region 14 and n+Type drain region
Domain 15, including silicon, silicon carbide, gallium nitride or GaAs, as semiconductor material.Using feelings of the silicon as semiconductor material
Under condition, as p-type impurity, it is able to use arsenic, phosphorus or antimony.As n-type impurity, it is able to use boron.
The conductive material of conductive part 20 and gate electrode 25 including polysilicon etc..
1st insulation division 21, the 2nd insulation division 22, the insulating materials of insulating layer 27 and gate insulator portion 26 including silica etc..
Drain electrode 31, source electrode 32, pad electrode 33 and pad electrode 34, the metal including aluminium etc..
Referring to Fig. 3~Fig. 6, the movement of semiconductor device 100 is illustrated.
Fig. 3 be include semiconductor device involved in embodiment electrical equipment circuit diagram.
Fig. 4 and Fig. 5 is the schematic diagram for indicating the movement of electric circuit shown in Fig. 3.
Fig. 6 is the timing diagram for indicating the movement of electric circuit shown in Fig. 3.
As shown in figure 3, electrical equipment 200 has the decompression transformation including 2 semiconductor devices involved in embodiment
Device.In Fig. 3, on high-tension side semiconductor device is expressed as semiconductor device 100a.The semiconductor device of low-pressure side is indicated
For semiconductor device 100b.Semiconductor device 100a has semiconductor element 1a and control device 2a.Semiconductor device 100b tool
There is semiconductor element 1b and control device 2b.
In buck converter, by the movement of control device 2a and 2b, on high-tension side semiconductor element 1a and low-pressure side
Semiconductor element 1b alternately become on state.It is exported as a result, than input voltage VINLow output voltage VOUT。
In Fig. 4 (a)~Fig. 4 (d) and Fig. 5 (a)~Fig. 5 (c), the figure of upper section indicates the one of electric circuit shown in Fig. 3
Part.The figure in middle section indicates the state of semiconductor element 1a.The figure of lower section indicates the state of semiconductor element 1b.
For example, the gate electrode 25a on high-tension side semiconductor element 1a applies the 4th current potential P4, to partly leading for low-pressure side
The gate electrode 25b of volume elements part 1b applies the 3rd current potential P3 (the timing T1 of Fig. 6).By applying the 4th current potential to gate electrode 25a
P4, the p-type substrate region 12 near gate electrode 25a form inversion layer IL.As a result, as shown in Fig. 4 (a), semiconductor element
1a conducting, in the inductor L of circuit, the on state current I that circulates towards output terminalON。
At this point, the conductive part 20a to semiconductor element 1a applies the 2nd current potential P2, to the conductive part 20b of semiconductor element 1b
Apply the 1st current potential P1.Apply the 2nd current potential P2 by the conductive part 20a to semiconductor element 1a, the n near conductive part 20?Type
The accumulating layer AL of the formation electronics of drift region 11.It can reduce the on state resistance in semiconductor element 1a.
Later, it is (fixed to be switched to the 3rd current potential P3 from the 4th current potential P4 for the current potential of the gate electrode 25a of semiconductor element 1a
When T2).As a result, as shown in Fig. 4 (b), inversion layer IL is eliminated, and semiconductor element 1a is switched to off state.In semiconductor element
When 1a is switched to off state, in a manner of continuing circulating current in inductor L, in the intrinsic diode of semiconductor element 1b
Middle circulation regenerative current IF。
At this point, the current potential of the conductive part 20a of semiconductor element 1a is switched to the 1st current potential P1 from the 2nd current potential P2.Semiconductor
The current potential of the conductive part 20b of element 1b is switched to the 2nd current potential P2 from the 1st current potential P1.As a result, in semiconductor element 1b,
N near conductive part 20b?Type drift region 11 forms accumulating layer AL.By forming accumulating layer AL, n?In type drift region 11
Electron concentration increases.The regenerative current I flowed in intrinsic diodeFIt is constant, therefore can inhibiting from source electrode
32 to n?Type drift region 11 injects on the basis of hole, and circulate necessary electric current.
Then, in order to which conductor element 1b is connected, the current potential of the gate electrode 25b of semiconductor element 1b is from the 3rd current potential P3
It is switched to the 4th current potential P4 (timing T3).After being just applied with the 4th current potential P4 to gate electrode 25b, in semiconductor element 1b
Interior accumulated electronics and hole are discharged from drain electrode 31 and source electrode 32 respectively.As a result, as shown in Fig. 4 (c), restore
Electric current IRIt circulates in semiconductor element 1b.In accumulation after the electronics of semiconductor element 1b and hole are discharged, such as Fig. 4 (d)
Shown, circulate on state current I in semiconductor element 1bON(timing T4).
Later, it is (fixed to be switched to the 3rd current potential P3 from the 4th current potential P4 for the current potential of the gate electrode 25b of semiconductor element 1b
When T5).As shown in Fig. 5 (a), after semiconductor element 1b is switched to off state, to continue circulating current in inductor L
Mode, circulate regenerative current I in the intrinsic diode of semiconductor element 1bF.At this point, the conductive part 20b of semiconductor element 1b
Current potential be maintained at the 2nd current potential P2.In semiconductor element 1b, continue in n?Type drift region 11 forms accumulating layer AL, thus
n?Electron concentration in type drift region 11 increases.The regenerative current I flowed in intrinsic diodeFIt is constant, therefore can be
Inhibit from source electrode 32 to n?Type drift region 11 injects on the basis of hole, and circulate necessary electric current.
Then, in order to which semiconductor element 1a is connected, the current potential of the gate electrode 25a of semiconductor element 1a is from the 3rd current potential
P3 is switched to the 4th current potential P4 (timing T6).At this point, the current potential of the conductive part 20a of semiconductor element 1a is cut from the 1st current potential P1
It is changed to the 2nd current potential P2.The current potential of the conductive part 20b of semiconductor element 1b is switched to the 1st current potential P1 from the 2nd current potential P2.Rigid
After being just applied with the 4th current potential P4 to gate electrode 25a, accumulate in semiconductor element 1b electronics and hole respectively from drain electrode electricity
Pole 31 and source electrode 32 are discharged.As a result, as shown in Fig. 5 (b), restoring current IRIt is flowed in semiconductor element 1b.It is accumulating
In in semiconductor element 1b electronics and hole discharge after, as shown in Fig. 5 (c), flow on state current in semiconductor element 1a
ION(timing T7).
That is, the gate electrode 25a of on high-tension side semiconductor element 1a current potential and conductive part 20a current potential for example simultaneously quilt
Switching.About the semiconductor element 1b of low-pressure side, after conductive part 20b is switched to high potential, gate electrode 25b is switched to
High potential.Later, after gate electrode 25b is switched to low potential, conductive part 20b is switched to low potential.It is partly leading as a result,
Circulate regenerative current I in volume elements part 1bFWhen, n can be made?Electron concentration in type drift region 11 increases.Be able to suppress from
Source electrode 32 is to n?Type drift region 11 injects hole.
The effect of embodiment is illustrated.
In the semiconductor device 100 involved in embodiment, conductive part 20 and gate electrode 25 are electrically connected with control device 2
It connects.Also, control device 2 independently controls conductive part 20 and the respective current potential of gate electrode 25.Specifically, control device 2
Carry out the 1st movement, the 2nd movement, the 3rd movement and the 4th movement below.
In the 1st movement, control device 2 makes the current potential of conductive part 20 be greater than the 1st electricity from the 1st current potential P1 variation for absolute value
The 2nd current potential P2 of position P1.N near conductive part 20 as a result,?Type drift region 11 forms accumulating layer AL.It is accumulated by being formed
Layer AL, so as to reduce the on state resistance of semiconductor element 1.
In the 2nd movement, control device 2 makes the current potential of gate electrode 25 be greater than the 3rd from the 3rd current potential P3 variation for absolute value
The 4th current potential P4 of current potential P3.The p-type substrate region 12 near gate electrode 25 forms inversion layer IL, semiconductor element as a result,
1 becomes on state.
The timing for carrying out the 1st movement, both can be identical as the 2nd movement, can also be different from the 2nd movement.In Fig. 4~Fig. 6
Example in, the 1st movement the 2nd movement before carry out.
In the 3rd movement, it is the 3rd current potential P3 that control device 2, which changes the current potential of gate electrode 25 from the 4th current potential P4,.3rd
Movement carries out after the 1st movement and the 2nd movement.Inversion layer IL is eliminated as a result, and semiconductor element 1 is switched to off state.
In the 4th movement, it is the 1st current potential P1 that control device 2, which changes the current potential of conductive part 20 from the 2nd current potential P2,.4th is dynamic
Make to carry out after the 3rd movement.Accumulating layer AL is eliminated as a result,.
In Fig. 4~movement shown in fig. 6, for example, the 1st movement corresponds to cutting for the current potential of the conductive part 20b of timing T2
It changes.Switching of 2nd movement corresponding to the current potential of the gate electrode 25b of timing T3.3rd movement corresponds to the gate electrode of timing T5
The switching of the current potential of 25b.Switching of 4th movement corresponding to the current potential of the conductive part 20b of timing T6.
When semiconductor element 1 is switched to off state from state, sometimes in intrinsic two pole of semiconductor element 1
Circulate regenerative current in pipe.Also, when regenerative current stream is complete, accumulation is discharged in the electronics of semiconductor element 1 and hole, from
And the restoring current that circulates.In order to reduce the consumption electric power in semiconductor element 1, it is effective for reducing the restoring current.
In order to reduce restoring current, in the semiconductor device 100 involved in embodiment, semiconductor element 1 is switched to
After off state, accumulating layer AL is formed about in conductive part 20.In this way, circulate regenerative current in semiconductor element 1
Period is also formed about accumulating layer AL in conductive part 20.The electronics flowed in semiconductor element 1 is efficiently to source electrode
32 discharges.Thereby, it is possible to reduce n?The concentration of electronics in type drift region 11 is able to suppress from source electrode 32 to n?Type drift
It moves region 11 and injects hole.That is, can reduce accumulation in n when regenerative current, which circulates, to be terminated and start to flow restoring current?Type
The amount of the electronics of drift region 11 and the amount in hole.As a result, restoring current can be reduced, semiconductor element 1 can reduce
In consumption electric power.
In Fig. 3~electrical equipment shown in fig. 6 200, control device 2 also carry out it is below 2nd movement, the 3rd movement and
1st movement.
In the 2nd movement, changing the current potential of the gate electrode 25a of semiconductor element 1a from the 3rd current potential P3 is the 4th current potential
P4.Semiconductor element 1a is switched on state as a result,.
In the 3rd movement after the 2nd movement, changing the current potential of gate electrode 25a from the 4th current potential P4 is the 3rd current potential
P3.Semiconductor element 1a is switched to off state from state as a result,.By the way that semiconductor element 1a is switched to cut-off shape
State, circulate in semiconductor element 1b regenerative current I after the 3rd movementF。
In the 1st movement after the 3rd movement, change the current potential of the conductive part 20b of semiconductor element 1b from the 1st current potential P1
For the 2nd current potential P2.Circulate in semiconductor element 1b regenerative current I as a result,FWhen, in the n of semiconductor element 1b?Type drift region
Domain 11 forms accumulating layer AL.The timing for carrying out the 1st movement, both can be identical as the 3rd movement, can also be different from the 3rd movement.
In Fig. 4~example shown in fig. 6, for example, the 2nd movement and the 3rd movement correspond respectively to the grid of timing T1 and T2
The switching of the current potential of pole electrode 25a.Switching of 1st movement corresponding to the current potential of the conductive part 20b of timing T2.
Semiconductor element 1a is set to be switched to off state from state, and the flowing regeneration electricity in semiconductor element 1b
Flow IFWhen, accumulating layer AL is formed in semiconductor element 1b.Thereby, it is possible to reduce the consumption electric power in semiconductor element 1b.
In Fig. 3, control device 2a and 2b are connected separately on semiconductor element 1a and 1b.It can be in semiconductor element 1a
And 1 control device is connected on 1b.In the above example, using semiconductor device involved in embodiment, decompression is constituted
Converter.In addition to this, semiconductor device involved in embodiment also can be used and constitute booster converter etc..Alternatively,
Semiconductor device involved in embodiment can be used and constitute bridge circuit described below.
Fig. 7 be include semiconductor device involved in embodiment other electrical equipments circuit diagram.
Fig. 8 is the schematic diagram for indicating the movement of electric circuit shown in Fig. 7.
Fig. 9 is the timing diagram for indicating the movement of electric circuit shown in Fig. 7.
Electrical equipment 210 shown in Fig. 7 includes multiple semiconductor element 1a~1d, control device 2 and motor M.Electrical
In equipment 210, semiconductor element 1a and semiconductor element 1d are connected in series.Semiconductor element 1b connects company with semiconductor element 1c
It connects.Semiconductor element 1a and semiconductor element 1c is connected in series via motor M (inductor).Semiconductor element 1b and semiconductor
Element 1d is connected in series via motor M.Control device 2 is connect with semiconductor element 1a~1d.Control device 2 controls semiconductor
The current potential of the respective conductive part 20 of element 1a~1d and gate electrode 25.
For example, applying the 4th electricity to the gate electrode 25c of the gate electrode 25a and semiconductor element 1c of semiconductor element 1a
Position P4 applies the 3rd current potential P3 (Fig. 9 to the gate electrode 25b of the gate electrode 25d and semiconductor element 1b of semiconductor element 1d
Timing T1).On state current I is flowed by semiconductor element 1a and 1c in motor M as a result,ON。
Then, the current potential of gate electrode 25a and 25c are switched to the 3rd current potential P3 (timing T2).Semiconductor element as a result,
1a and 1c are switched to off state.At this point, circulating again in the intrinsic diode of semiconductor element 1d and 1b as shown in Fig. 8 (b)
Raw electric current IF, afterflow galvanization is relayed in motor M.In timing T2, the current potential of the conductive part 20d of semiconductor element 1d and partly lead
The current potential of the conductive part 20b of volume elements part 1b is switched to the 2nd current potential P2 from the 1st current potential P1.As a result, in semiconductor element 1d and 1b
Middle circulation regenerative current IFWhen, increase electron concentration in these semiconductor elements, is able to suppress the injection rate in hole.
Then, by the current potential of the gate electrode 25d of semiconductor element 1d and the electricity of the gate electrode 25b of semiconductor element 1b
Position, is switched to the 4th current potential P4 (timing T3) from the 3rd current potential P3.At this point, accumulation is in the electronics and sky of semiconductor element 1d and 1b
Cave is discharged from these semiconductor elements.As a result, as shown in Fig. 8 (c), circulate restoring current I in semiconductor element 1d and 1bR。
Then, semiconductor element 1d and 1b are switched on state, as shown in Fig. 8 (d), semiconductor element 1b,
Circulating current (timing T4) in motor M and semiconductor element 1d.At this point, to the conductive part 20d and semiconductor of semiconductor element 1d
The conductive part 20b of element 1b applies the 2nd current potential P2, forms accumulating layer.It is logical in semiconductor element 1d and 1b thereby, it is possible to reduce
State resistance.
Then, semiconductor element 1d and 1b are switched to off state (timing T5).That is, by the current potential of gate electrode 25d
And the current potential of gate electrode 25b is switched to the 3rd current potential P3 from the 4th current potential P4, by the current potential of conductive part 20d and conductive part 20b
Current potential is switched to the 1st current potential P1 from the 2nd current potential P2.As a result, as shown in Fig. 8 (e), in the intrinsic of semiconductor element 1a and 1c
Circulate regenerative current I in diodeF, afterflow galvanization is relayed in motor M.In timing T5, the conductive part 20a of semiconductor element 1a
Current potential and semiconductor element 1c conductive part 20c current potential, be switched to the 2nd current potential P2 from the 1st current potential P1.It is partly leading as a result,
Circulate regenerative current I in volume elements part 1a and 1cFWhen, increase electron concentration in these semiconductor elements, is able to suppress hole
Injection rate.
Then, by the current potential of the gate electrode 25a of semiconductor element 1a and the electricity of the gate electrode 25c of semiconductor element 1c
Position, is switched to the 4th current potential P4 (timing T6) from the 3rd current potential P3.At this point, accumulation is in the electronics and sky of semiconductor element 1d and 1b
Cave is discharged from these semiconductor elements.As a result, as shown in Fig. 8 (f), circulate restoring current in semiconductor element 1a and 1c
IR。
In Fig. 7~electrical equipment shown in Fig. 9 210, control device 2 carry out it is below 2nd movement, the 3rd movement and the 1st
Movement.
In the 2nd movement, make the current potential of 1 (the 1st semiconductor element) gate electrode 25 of multiple semiconductor elements 1, from
3rd current potential P3 variation is the 4th current potential P4 that absolute value is greater than the 3rd current potential P3.The 1st semiconductor element is switched to conducting shape as a result,
State.
In the 3rd movement after the 2nd movement, make the current potential of the gate electrode 25 of the 1st semiconductor element from the 4th current potential P4
Variation is the 3rd current potential P3.The 1st semiconductor element is switched to off state as a result,.
In the 1st movement after the 3rd movement, make the others 1 (the 2nd semiconductor element) of multiple semiconductor elements 1
The current potential of conductive part 20 changes the 2nd current potential P2 bigger than the 1st current potential P1 for absolute value from the 1st current potential P1.
The timing for carrying out the 1st movement, both can be identical as the 3rd movement, can also be different from the 3rd movement.Preferably, into
The timing that row the 1st acts is identical as the 3rd movement or before the 3rd movement.According to the control method, in the 2nd semiconductor element
In go into circulation regenerative current when, be formed with accumulating layer AL in the 2nd semiconductor element, therefore can reduce consumption electric power.
In Fig. 8 and movement shown in Fig. 9, for example, the 2nd movement corresponds to the current potential of the gate electrode 25a of timing T1
Switching.Switching of 3rd movement corresponding to the current potential of the gate electrode 25a of timing T2.1st movement corresponds to the conductive part of timing T2
The switching of the current potential of 20d.
Alternatively, switching of the 2nd movement corresponding to the current potential of the gate electrode 25d of timing T3.3rd movement corresponds to timing T5
Gate electrode 25d current potential switching.Switching of 1st movement corresponding to the current potential of the conductive part 20a of timing T5.
Control device 2 can also carry out other the 2nd movements after the 3rd movement and the 1st movement, in other the 2nd movements
In, make the current potential of the above-mentioned gate electrode of above-mentioned 2nd semiconductor element from above-mentioned above-mentioned 4th current potential of 3rd potential change, and will
Above-mentioned 2nd semiconductor element is switched on state.
In Fig. 8 and movement shown in Fig. 9, other above-mentioned the 2nd movements are for example corresponding to the gate electrode 25d's of timing T3
The switching of the current potential of the gate electrode 25a of the switching or timing T6 of current potential.
In electrical equipment 210 shown in Fig. 7, semiconductor device 100 carries out the 2nd above-mentioned movement, the 3rd movement and the 1st
Movement, so as to reduce the consumption electric power of semiconductor element 1 in the same manner as Fig. 3~example shown in fig. 6.
About the opposite height of the impurity concentration between each semiconductor regions in each embodiment described above, such as
SCM (sweep type electrostatic capacitance microscope) is able to use to confirm.In addition, the carrier concentration in each semiconductor regions can regard
It is equal with the impurity concentration activated in each semiconductor regions.Accordingly, with respect to the carrier concentration between each semiconductor regions
Opposite height is able to use SCM also to confirm.
In addition, about the impurity concentration in each semiconductor regions, such as SIMS (secondary ion mass spectrometry can be passed through
Method) it measures.
More than, several embodiments of the invention is illustrated, but these embodiments prompt as an example,
It is not intended to limit the range of invention.These new embodiments can be implemented in a variety of other ways, not take off
In range from the objective of invention, it is able to carry out various omissions, displacement, change etc..These embodiments and modifications thereof example, including
In the range and objective of invention, and it is also included in the invention and its equivalent range of claims record.In addition, preceding
Each embodiment stated can be combined with each other and implement.
Claims (12)
1. a kind of semiconductor device, has semiconductor element and control device,
The semiconductor element includes
1st semiconductor regions of the 1st conductivity type；
2nd semiconductor regions of the 2nd conductivity type are arranged on above-mentioned 1st semiconductor regions；
3rd semiconductor regions of the 1st conductivity type are arranged on a part of above-mentioned 2nd semiconductor regions；
Conductive part is arranged in above-mentioned 1st semiconductor regions across the 1st insulation division；And
Gate electrode is arranged on above-mentioned conductive part across the 2nd insulation division, with from above-mentioned 1st semiconductor regions towards upper
It states on vertical the 2nd direction in the 1st direction of the 2nd semiconductor regions, with a part of above-mentioned 1st semiconductor regions, the above-mentioned 2nd half
At least part of conductive region and above-mentioned 3rd semiconductor regions is opposed across gate insulator portion,
Above-mentioned control device is electrically connected with above-mentioned conductive part and above-mentioned gate electrode, and progress the 1st acts, the 2nd acts, the 3rd moves
Make and the 4th act,
In above-mentioned 1st movement, the current potential of above-mentioned conductive part is made to be greater than above-mentioned 1st current potential from the 1st potential change absolute value
2nd current potential,
In above-mentioned 2nd movement, the current potential of above-mentioned gate electrode is made to be greater than above-mentioned 3rd current potential from the 3rd potential change absolute value
The 4th current potential, above-mentioned semiconductor element is switched on state,
In above-mentioned 3rd movement after above-mentioned 1st movement and above-mentioned 2nd movement, make the current potential of above-mentioned gate electrode from above-mentioned
4th potential change is above-mentioned 3rd current potential, and above-mentioned semiconductor element is switched to off state,
In above-mentioned 4th movement after above-mentioned 3rd movement, make the current potential of above-mentioned conductive part from above-mentioned 2nd potential change
State the 1st current potential.
2. semiconductor device as described in claim 1, wherein
Above-mentioned 1st movement carries out simultaneously with above-mentioned 2nd movement, or carries out before above-mentioned 2nd movement.
3. semiconductor device as described in claim 1, wherein
Have multiple above-mentioned semiconductor elements,
Above-mentioned multiple semiconductor elements include the 1st semiconductor element and the 2nd semiconductor element,
Above-mentioned control device is led with the above-mentioned conductive part of above-mentioned 1st semiconductor element and above-mentioned gate electrode and the above-mentioned 2nd half
The conductive part and gate electrode of volume elements part are electrically connected,
Above-mentioned control device carries out it before above-mentioned 1st movement, above-mentioned 2nd movement, above-mentioned 3rd movement and above-mentioned 4th movement
He the 2nd movement and other the 3rd movement,
In other above-mentioned the 2nd movements, make the current potential of the above-mentioned gate electrode of above-mentioned 2nd semiconductor element from above-mentioned 3rd current potential
Variation is above-mentioned 4th current potential, and above-mentioned 2nd semiconductor element is switched on state,
In other above-mentioned the 3rd movements after other above-mentioned the 2nd movements, make the above-mentioned grid electricity of above-mentioned 2nd semiconductor element
The current potential of pole is above-mentioned 3rd current potential from above-mentioned 4th potential change, and above-mentioned 2nd semiconductor element is switched to off state.
4. semiconductor device as claimed in claim 3, wherein
Above-mentioned 1st semiconductor element is connected in series with above-mentioned 2nd semiconductor element.
5. semiconductor device as claimed in claim 4, wherein
Inductor is also equipped with,
One end of above-mentioned inductor is connected between above-mentioned 1st semiconductor element and above-mentioned 2nd semiconductor element.
6. a kind of semiconductor device has multiple semiconductor elements and control device,
Multiple semiconductor element is the multiple semiconductor elements for including the 1st semiconductor element and the 2nd semiconductor element, above-mentioned more
A semiconductor element is respectively provided with:
1st semiconductor regions of the 1st conductivity type；
2nd semiconductor regions of the 2nd conductivity type are arranged on above-mentioned 1st semiconductor regions；
3rd semiconductor regions of the 1st conductivity type are arranged on a part of above-mentioned 2nd semiconductor regions；
Conductive part is arranged in above-mentioned 1st semiconductor regions across the 1st insulation division；And
Gate electrode is arranged on above-mentioned conductive part across the 2nd insulation division, with from above-mentioned 1st semiconductor regions towards upper
It states on vertical the 2nd direction in the 1st direction of the 2nd semiconductor regions, with a part of above-mentioned 1st semiconductor regions, the above-mentioned 2nd half
At least part of conductive region and above-mentioned 3rd semiconductor regions is opposed across gate insulator portion,
Above-mentioned control device is electrically connected with multiple above-mentioned conductive parts and multiple above-mentioned gate electrodes, and progress the 2nd acts, the 3rd moves
Make and the 1st act,
In above-mentioned 2nd movement, keep the current potential of the above-mentioned gate electrode of above-mentioned 1st semiconductor element exhausted from the 3rd potential change
It is greater than the 4th current potential of above-mentioned 3rd current potential to value, above-mentioned 1st semiconductor element is switched on state,
In above-mentioned 3rd movement after above-mentioned 2nd movement, make the current potential of the above-mentioned gate electrode of above-mentioned 1st semiconductor element
It is above-mentioned 3rd current potential from above-mentioned 4th potential change, above-mentioned 1st semiconductor element is switched to off state,
It is above-mentioned 2nd movement after it is above-mentioned 1st movement in, make the current potential of the above-mentioned conductive part of above-mentioned 2nd semiconductor element from
1st potential change is the 2nd current potential that absolute value is greater than above-mentioned 1st current potential.
7. semiconductor device as claimed in claim 6, wherein
Above-mentioned 3rd movement carries out simultaneously with above-mentioned 2nd movement, or carries out before above-mentioned 2nd movement.
8. semiconductor device as claimed in claim 6, wherein
Above-mentioned control device also carries out the 4th movement after above-mentioned 2nd movement and above-mentioned 3rd movement, in the 4th movement, makes
The current potential of the above-mentioned gate electrode of above-mentioned 2nd semiconductor element from above-mentioned 3rd potential change be above-mentioned 4th current potential, by the above-mentioned 2nd
Semiconductor element is switched on state.
9. semiconductor device as claimed in claim 6, wherein
Above-mentioned 1st semiconductor element and above-mentioned 2nd semiconductor element are connected in series.
10. semiconductor device as claimed in claim 9, wherein
Inductor is also equipped with,
Above-mentioned inductor is connected between above-mentioned 1st semiconductor element and above-mentioned 2nd semiconductor element.
11. a kind of control device, is electrically connected with semiconductor element,
The semiconductor element includes
1st semiconductor regions of the 1st conductivity type；
2nd semiconductor regions of the 2nd conductivity type are arranged on above-mentioned 1st semiconductor regions；
3rd semiconductor regions of the 1st conductivity type are arranged on a part of above-mentioned 2nd semiconductor regions；
Conductive part is arranged in above-mentioned 1st semiconductor regions across the 1st insulation division；And
Gate electrode is arranged on above-mentioned conductive part across the 2nd insulation division, with from above-mentioned 1st semiconductor regions towards upper
It states on vertical the 2nd direction in the 1st direction of the 2nd semiconductor regions, with a part of above-mentioned 1st semiconductor regions, the above-mentioned 2nd half
At least part of conductive region and above-mentioned 3rd semiconductor regions is opposed across gate insulator portion,
Above-mentioned control device carries out the 1st movement, the 2nd movement, the 3rd movement and the 4th movement,
In above-mentioned 1st movement, the current potential of above-mentioned conductive part is made to be greater than above-mentioned 1st current potential from the 1st potential change absolute value
2nd current potential,
In above-mentioned 2nd movement, the current potential of above-mentioned gate electrode is made to be greater than above-mentioned 3rd current potential from the 3rd potential change absolute value
The 4th current potential, above-mentioned semiconductor element is switched on state,
In above-mentioned 3rd movement after above-mentioned 1st movement and above-mentioned 2nd movement, make the current potential of above-mentioned gate electrode from above-mentioned
4th potential change is above-mentioned 3rd current potential, and above-mentioned semiconductor element is switched to off state,
In above-mentioned 4th movement after above-mentioned 3rd movement, make the current potential of above-mentioned conductive part from above-mentioned 2nd potential change
State the 1st current potential.
12. control device as claimed in claim 11, wherein
Above-mentioned 1st movement carries out simultaneously with above-mentioned 2nd movement, or carries out before above-mentioned 2nd movement.
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| US20190288102A1 (en) | 2019-09-19 |
| US10566452B2 (en) | 2020-02-18 |
| JP6864640B2 (en) | 2021-04-28 |
| JP2019165060A (en) | 2019-09-26 |
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