CN110265379A - The tilting IC down-lead bracket in base island and encapsulation IC - Google Patents
The tilting IC down-lead bracket in base island and encapsulation IC Download PDFInfo
- Publication number
- CN110265379A CN110265379A CN201910563678.3A CN201910563678A CN110265379A CN 110265379 A CN110265379 A CN 110265379A CN 201910563678 A CN201910563678 A CN 201910563678A CN 110265379 A CN110265379 A CN 110265379A
- Authority
- CN
- China
- Prior art keywords
- encapsulation
- dao
- pin
- encapsulation unit
- lead bracket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 81
- 230000017525 heat dissipation Effects 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 210000003205 muscle Anatomy 0.000 description 16
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses the tilting IC down-lead bracket in base island and encapsulation IC, it include: along multiple encapsulation units arranged in a straight line, Ji Dao and multiple pins are equipped in each encapsulation unit, the shape of Ji Dao is in polygon, for Ji Dao there are angle at least between a line line and the orientation of encapsulation unit, angle is less than 90 ° and is greater than 0 °.Structure of the invention is compact, high production efficiency, and the encapsulation IC produced is small in size.
Description
Technical field
The present invention relates to the tilting IC down-lead bracket of IC package technical field more particularly to base island and encapsulation IC.
Background technique
Encapsulation technology is a kind of technology for being packaged the plastics of semiconductor integrated circuit chip insulation or ceramic material, envelope
The encapsulation of dress technology is necessary and vital for chip.Because chip must be isolated from the outside, to prevent sky
Impurity in gas causes electric property to decline the corrosion of chip, on the other hand, the chip after encapsulation be also more convenient for installation and
Transport.For down-lead bracket as carrier most important in encapsulation technology, design structure directly affects the quality and effect of encapsulation technology
Rate.
Down-lead bracket generally comprises multiple encapsulation column arranged from left to right, is equipped in encapsulation column by the envelope down toward lower arrangement
Unit is filled, more pins are connected on encapsulation unit, chip is arranged on encapsulation unit, then by semiconductor plastic package die to envelope
After filling unit progress Plastic Package, by pin, cutting forms single IC from encapsulation unit together.As shown in Figure 1, the prior art
In common encapsulation unit be equipped with that 8 pins, 10 pins are even more, and the island encapsulation unit Nei Ji is square using square
Two relative edges are horizontally disposed, and two other relative edge is vertically arranged, and pin symmetry arrangement is in the two sides of Ji Dao, encapsulation unit face
Product is big, and structure is more open, and the encapsulation unit density arranged on down-lead bracket is low, causes the waste of timbering material, chip installation
Wiring is inconvenient after on Ji Dao, and packaging efficiency is low.
Therefore, how to design the IC down-lead bracket of reduction waste of material is industry technical problem urgently to be resolved.
Summary of the invention
In order to solve that loosely organized defect exists in the prior art, the invention proposes the IC down-lead brackets that base island is tilting
And encapsulation IC.
The technical solution adopted by the present invention is that the tilting IC down-lead bracket in design base island, comprising: along arranged in a straight line multiple
Encapsulation unit, Ji Dao and multiple pins are equipped in each encapsulation unit, and the shape of Ji Dao is in polygon, Ji Dao at least a line
There are angle between line and the orientation of encapsulation unit, angle is less than 90 ° and is greater than 0 °.
Preferably, each pin is made of root and extension in encapsulation unit, and extension is connected to close on root
One end of Ji Dao, the surrounding of Ji Dao are extended portion and surround, and the junction of root and its extension is equipped with deflection angle.
Preferably, it is equipped with extension in encapsulation unit and is connected to the heat dissipation pin on Ji Dao, be additionally provided with and prolong in encapsulation unit
There are the operational pin in gap, interstice coverage is 0.1mm to 0.3mm by extending portion and Ji Dao.
Preferably, the root of all working pin is of same size in encapsulation unit, and width range is 0.2mm to 0.5mm.
Preferably, radiate pin extension and Ji Dao junction be equipped with transition arc.
Preferably, formation encapsulation arranged in a straight line arranges multiple encapsulation units along the vertical direction, is equipped with eight in encapsulation unit and draws
The root of foot, pin is vertically arranged, and the upside of Ji Dao is arranged in the horizontal direction there are four upper pin, the lower lateral edge level side of Ji Dao
To arrangement, there are four lower pins.
Preferably, four upper pins are aligned one by one in the vertical direction with four lower pins, are drawn on two of two sides
Foot root depth, which is greater than, is located in the middle two upper pins, and two lower pin root depths positioned at two sides, which are greater than, to be located in the middle
Two lower pins.
Preferably, Ji Dao is square, and angular range is 30 ° to 60 °.
The invention also provides encapsulation IC, including the encapsulation unit in above-mentioned IC down-lead bracket.
Preferably, IC is encapsulated further include: the chip being mounted on Ji Dao, the plastic-sealed body for being coated on encapsulation unit, encapsulation are single
Plastic-sealed body is stretched out in one end in member on each pin far from Ji Dao.
Compared with prior art, the present invention by by base island it is tilting can make pin it is closer be enclosed in its surrounding, envelope
The encapsulation unit density height that cellar area is small, arranges on down-lead bracket is filled, reduces the waste of timbering material, production efficiency is higher.
Detailed description of the invention
Below with reference to embodiment and attached drawing, the present invention is described in detail, in which:
Fig. 1 is the structural schematic diagram of IC down-lead bracket in the present invention；
Fig. 2 is the structural schematic diagram of encapsulation unit in the present invention；
Fig. 3 is the structural schematic diagram that IC is encapsulated in the present invention；
Fig. 4 is the side schematic view that IC is encapsulated in the present invention.
Specific embodiment
As shown in Figure 1, 2, IC down-lead bracket proposed by the present invention, comprising: multiple encapsulation units 1, encapsulation unit 1 is along vertical
Direction formation encapsulation column arranged in a straight line, two or so encapsulation side by side, which arrange, constitutes an encapsulation group 2, neighbouring in encapsulation group 2
Two encapsulation units between be equipped with horizontal edge muscle 3, vertical edge muscle 4, the left and right two of horizontal edge muscle 3 are equipped between two neighboring encapsulation group 2
End is connected on the vertical edge muscle 4 of its respective side, and the upper end of all encapsulation groups 2 and vertical edge muscle 4 is both connected on top muscle 5,
The lower end of all encapsulation groups 2 and vertical edge muscle 4 is connected on following muscle 6, passes through horizontal edge muscle 3, vertical edge muscle 4, top muscle 5 and following muscle
6 connection keeps the structure of IC down-lead bracket highly stable, is additionally provided with location hole on top muscle 5 and following muscle 6, to facilitate positioning
IC down-lead bracket is packaged processing.
The structure of encapsulation unit is described in detail below, base island 11 and multiple pins are equipped in each encapsulation unit 1
12, the shape on base island 11 is in polygon, can be quadrangle, pentagon etc., and base island 11 is designed as slant setting, base island 11 to
There are angle between rare a line line and vertical direction, angle is less than 90 ° and is greater than 0 °.As shown in Fig. 2, in preferred embodiment
In, base island 11 is 0.85 ± 0.05mm, the angular range in base island 11 sideline and vertical direction using square, the side length on base island 11
Preferably 30 ° to 60 °, the upper sideline in 11 left side of the island Tu2Zhong Ji and the angle of vertical direction are 36 °.
Each pin 12 is made of root and extension 121 in encapsulation unit 1, and extension 121 is connected on root and leans on
The one end on the island Jin Ji 11, after 11 slant setting of base island, four corners can vacate large stretch of available space, pin 12 up and down
The arrangement of extension 121 surrounded within this space to base island 11, base island 11 is in the center of encapsulation unit 1, root and its
The junction of extension 121 is equipped with deflection angle, and deflection angle is obtuse angle or right angle, design deflection angle and extension benefit be can be with
The positioning relation for reinforcing pin 12 and plastic-sealed body 7, extension prevents pin inside plastic-sealed body 7 when external force pulls pin 12
12 deviate from from plastic-sealed body 7, and encapsulation IC is reliable and stable.
It is equipped with extension 121 in encapsulation unit 1 and is connected to the heat dissipation pin on base island 11, the extension 121 for the pin that radiates
Junction with base island 11 is transition arc, and when external force pulls heat dissipation pin, transition arc can optimize the shearing force of junction,
It avoids heat dissipation pin from tearing from base island 11, influences the radiating efficiency on base island 11.Be additionally provided in encapsulation unit 1 extension 121 with
There are the operational pin in gap, interstice coverage is 0.1mm to 0.3mm on base island 11, the root of all working pin in encapsulation unit 1
Of same size, width range is 0.2mm to 0.5mm.Eight pins 12 are provided in encapsulation unit 1 altogether, the root of pin 12 is perpendicular
Straight setting, the upside on base island 11 are arranged in the horizontal direction there are four upper pin, and the root of four upper pins, which is connected to, to be mutually adjacent to
On horizontal edge muscle 3 above it, the downside on base island 11 is arranged in the horizontal direction there are four lower pin, and the root of four lower pins connects
On being mutually adjacent to horizontal edge muscle 3 below, the spacing of two neighboring upper pin it is identical with the spacing of two neighboring lower pin and
It is 0.45 ± 0.05mm.
Four upper pins are aligned one by one in the vertical direction with four lower pins, and two upper pin roots positioned at two sides are long
Degree, which is greater than, is located in the middle two upper pins, and two lower pin root depths positioned at two sides, which are greater than to be located in the middle under two, to be drawn
Foot is located in the middle the lower pin in two lower pins on the right side as heat dissipation pin, is radiated by the heat dissipation pin to base island 11,
In a preferred embodiment, radiate pin root width it is identical as operational pin so that up and down pin arrangement structure it is compact, reduce
The area of encapsulation unit.It should be noted that IC down-lead bracket is metallic support, thickness is only 0.15 ± 0.05mm, and IC draws
The surface of line bracket is equipped with one layer of electroplating surface.
As shown in Figure 3,4, the invention also provides the encapsulation IC using above-mentioned encapsulation unit, and encapsulation IC includes: to be mounted on
Chip on base island 11, the plastic-sealed body 7 being coated on encapsulation unit 1, far from base island 11 on each pin 12 in encapsulation unit 1
Plastic-sealed body 7 is stretched out in one end, uses the encapsulation IC that encapsulation unit 1 processes in preferred embodiment for cuboid, width is
1.55 ± 0.05mm, length are 3.23 ± 0.05mm, and the size for encapsulating IC is very small, and the scope of application is wider.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of IC down-lead bracket that base island is tilting, comprising: along multiple encapsulation units arranged in a straight line, each encapsulation unit
In be equipped with Ji Dao and multiple pins, the shape of the Ji Dao is in polygon；It is characterized in that, the Ji Dao at least a line line
There are angle between orientation with the encapsulation unit, the angle is less than 90 ° and is greater than 0 °.
2. IC down-lead bracket as described in claim 1, which is characterized in that each pin is by root in the encapsulation unit
Portion and extension are constituted, and the extension is connected to one end on the root close to the Ji Dao, the surrounding quilt of the Ji Dao
The extension surrounds, and the junction of the root and its extension is equipped with deflection angle.
3. IC down-lead bracket as claimed in claim 2, which is characterized in that be equipped with extension in the encapsulation unit and be connected to institute
Heat dissipation pin on the island Shu Ji, being additionally provided with extension in the encapsulation unit, there are the operational pin in gap, institutes with the Ji Dao
Stating interstice coverage is 0.1mm to 0.3mm.
4. IC down-lead bracket as claimed in claim 3, which is characterized in that the root of all working pin in the encapsulation unit
Of same size, the width range is 0.2mm to 0.5mm.
5. IC down-lead bracket as claimed in claim 4, which is characterized in that the extension of the heat dissipation pin is with the Ji Dao's
Junction is equipped with transition arc.
6. IC down-lead bracket as claimed in claim 4, which is characterized in that multiple encapsulation units along the vertical direction arrange by straight line
Column form encapsulation column, are equipped with eight pins in the encapsulation unit, the root of the pin is vertically arranged, the upside of the Ji Dao
Arrangement is there are four upper pin in the horizontal direction, the downside of the Ji Dao arrange in the horizontal direction there are four lower pin.
7. IC down-lead bracket as claimed in claim 6, which is characterized in that described four upper pins and four lower pins exist
It is aligned one by one on vertical direction, two upper pin root depths positioned at two sides, which are greater than, is located in the middle two upper pins, is located at
The lower pin root depth of two of two sides, which is greater than, is located in the middle two lower pins.
8. IC down-lead bracket as described in claim 1, which is characterized in that the Ji Dao is square, and the angular range is
30 ° to 60 °.
9. a kind of encapsulation IC, which is characterized in that including the encapsulation list as described in any one of claim 1 to 8 in IC down-lead bracket
Member.
10. encapsulation IC as claimed in claim 9, which is characterized in that further include: it is mounted on chip on the Ji Dao, cladding
Institute is stretched out in one end in the plastic-sealed body of the encapsulation unit, the encapsulation unit on each pin far from the Ji Dao
State plastic-sealed body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910563678.3A CN110265379B (en) | 2019-06-26 | IC lead support with inclined base island and packaged IC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910563678.3A CN110265379B (en) | 2019-06-26 | IC lead support with inclined base island and packaged IC |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110265379A true CN110265379A (en) | 2019-09-20 |
| CN110265379B CN110265379B (en) | 2024-07-16 |
Family
ID=
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60137049A (en) * | 1983-12-26 | 1985-07-20 | Toshiba Corp | Resin-sealed semiconductor device |
| US5126823A (en) * | 1990-03-06 | 1992-06-30 | Kabushiki Kaisha Toshiba | Lead frame having at least two islands and resin molded semiconductor device using it |
| JPH08195470A (en) * | 1995-01-19 | 1996-07-30 | Murata Mfg Co Ltd | Lead frame for semiconductor integrated circuit, and semiconductor integrated circuit |
| CN101794759A (en) * | 2009-01-29 | 2010-08-04 | 恩益禧电子股份有限公司 | Lead frame and method of manufacturing semiconductor device |
| CN104167403A (en) * | 2014-08-19 | 2014-11-26 | 无锡中微爱芯电子有限公司 | Lead frame for multi-pin encapsulation |
| CN211238234U (en) * | 2019-06-26 | 2020-08-11 | 深圳市尚明精密模具有限公司 | IC lead wire support with inclined base island and packaged IC |
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60137049A (en) * | 1983-12-26 | 1985-07-20 | Toshiba Corp | Resin-sealed semiconductor device |
| US5126823A (en) * | 1990-03-06 | 1992-06-30 | Kabushiki Kaisha Toshiba | Lead frame having at least two islands and resin molded semiconductor device using it |
| JPH08195470A (en) * | 1995-01-19 | 1996-07-30 | Murata Mfg Co Ltd | Lead frame for semiconductor integrated circuit, and semiconductor integrated circuit |
| CN101794759A (en) * | 2009-01-29 | 2010-08-04 | 恩益禧电子股份有限公司 | Lead frame and method of manufacturing semiconductor device |
| CN104167403A (en) * | 2014-08-19 | 2014-11-26 | 无锡中微爱芯电子有限公司 | Lead frame for multi-pin encapsulation |
| CN211238234U (en) * | 2019-06-26 | 2020-08-11 | 深圳市尚明精密模具有限公司 | IC lead wire support with inclined base island and packaged IC |
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| CB02 | Change of applicant information |
Address after: 518000 1st floor, workshop (3), Buyong A-2 Industrial Zone, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: SHENZHEN SHANGMING PRECISION MOULD CO.,LTD. Applicant after: Fuman microelectronics Group Co.,Ltd. Address before: 518000 1st floor, workshop (3), Buyong A-2 Industrial Zone, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN SHANGMING PRECISION MOULD Co.,Ltd. Applicant before: FINE MADE MICROELECTRONICS GROUP CO.,LTD. |
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| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220708 Address after: 518000 1701, building 1, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant after: Fuman microelectronics Group Co.,Ltd. Address before: 518000 1st floor, workshop (3), Buyong A-2 Industrial Zone, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN SHANGMING PRECISION MOULD CO.,LTD. Applicant before: Fuman microelectronics Group Co.,Ltd. |
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| GR01 | Patent grant |