CN110265343A - The dissimilar materials combination method of semiconductor element - Google Patents
The dissimilar materials combination method of semiconductor element Download PDFInfo
- Publication number
- CN110265343A CN110265343A CN201910150517.1A CN201910150517A CN110265343A CN 110265343 A CN110265343 A CN 110265343A CN 201910150517 A CN201910150517 A CN 201910150517A CN 110265343 A CN110265343 A CN 110265343A
- Authority
- CN
- China
- Prior art keywords
- semiconductor element
- substrate
- engagement
- dissimilar materials
- combination method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 239000000463 material Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000003292 glue Substances 0.000 claims abstract description 36
- 239000002346 layers by function Substances 0.000 claims abstract description 27
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 11
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 229920000297 Rayon Polymers 0.000 claims description 53
- 239000010410 layer Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000000608 laser ablation Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 239000011265 semifinished product Substances 0.000 description 27
- 238000005520 cutting process Methods 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006303 photolysis reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A kind of dissimilar materials combination method of semiconductor element, patterned engagement glue is initially formed in first substrate, it is intended to enable the engagement adhesive curing with after the semiconductor element of the engagement glue bonding and the engagement glue bonding again, and it can be easier to functional layer obtained by after the semiconductor component surfaces are formed as the engagement adhesive curing, and the thickness uniformity of the functional layer can be promoted.
Description
Technical field
The present invention relates to a kind of material combination methods, combine more particularly to a kind of dissimilar materials for semiconductor element
Method.
Background technique
Normally, one layer of functional layer different from the material of the semiconductor element top surface is formed in semiconductor element top surface
When, it generally can use the modes such as stickup, spraying, dispensing and formed.However, need to consider further that the reliability of viscose glue using bonding method
And it is not easy batch making；Spraying method then be easy to cause semiconductor element in addition to top surface, can also be infected with the function in circumferential surface
The material of ergosphere；And when forming functional layer in a manner of dispensing, since the functional layer need to have certain thickness, it can be because of material
The influence of cohesive force and surface tension and the disadvantage for causing film thickness unevenness, in addition, being also easy to the problem of having material overflow generation.
Using the semiconductor element as light-emitting component, which is containing the wavelength convert material that can be used to change light-emitting component and go out optical wavelength
For material, if the problem of film thickness for being formed in the functional layer of light-emitting component top surface is uneven, and it will cause light color differences out.
Summary of the invention
The purpose of the present invention is to provide a kind of dissimilar materials combination methods of semiconductor element.
Then, the dissimilar materials combination method of semiconductor element of the present invention includes following step.
Step A prepares first substrate.
Step B, in forming patterned engagement glue on the first substrate.
Step C, by the surface to be joined of at least semiconductor element and the engagement glue bonding, and by the engagement adhesive curing shape
At functional layer.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein at least semiconductor element
With the actuation layer being made of semiconductor material, the engagement glue be engaged in the actuation layer surface, and the material of the gluing glue with
The material on the surface to be joined is different.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein step B is to utilize web plate
Mode of printing forms the patterned engagement glue.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein the first substrate be glass,
Aluminium oxide, aluminium nitride or flexible base plate.
Also include step D preferably, the dissimilar materials combination method of semiconductor element of the present invention, remove this first
Substrate.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein step D is to utilize machinery
Removing or laser ablation, which is removed.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein the engagement glue have it is multiple that
This interval and engagement blob of viscose arranged into an array, step C are that multiple semiconductor elements are engaged blob of viscose engagement with described respectively.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein the engagement blob of viscose, which has, to be enabled
The vacancy section of the surface exposure of the semiconductor element.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein the engagement glue includes main material
And it is scattered in the added material of the main material, which is the organic or inorganic material of light transmission, which turns for wavelength
Conversion materials.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein the engagement glue has multiple connect
Blob of viscose is closed, and the wavelength conversion material of the engagement blob of viscose can be identical or different.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein step C also further will
The second substrate is engaged in at least surface of the semiconductor element far from the first substrate, enables at least semiconductor element sandwiched
It is fixed between the first substrate and the second substrate.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein this method also includes to be implemented in
Step E after step D, step E are to enable this at least semiconductor element is separated with the second substrate.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein step C is by multiple shapes
At in the second substrate semiconductor element simultaneously with the engagement glue bonding.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein the engagement glue have it is multiple that
This interval and engagement blob of viscose arranged into an array, the engagement blob of viscose is formed in the first substrate, then will have the semiconductor
To be joined surface of the second substrate of element with the semiconductor element far from the second substrate simultaneously with the engagement blob of viscose
Engagement.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein the engagement glue have it is multiple that
This interval and engagement blob of viscose arranged into an array, step C are multiple semiconductor elements to be first formed in the second substrate, then will have
Have to be joined surface of the second substrate of the semiconductor element with the semiconductor element far from the second substrate simultaneously with
Engagement blob of viscose engagement.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, includes also step F, step F is to cut
The second substrate is cut, to enable the semiconductor element be separated from each other.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, also comprising being implemented in step C and being somebody's turn to do
Step D between step F, step D are to remove the first substrate.
Preferably, the dissimilar materials combination method of semiconductor element of the present invention, wherein the first substrate be it is transparent,
And the first substrate is greater than 50% relative to the optical wavelength penetrance after conversion.
Beneficial effect of the invention is: being initially formed patterned engagement glue in first substrate, then is intended to and the engagement
The semiconductor element of glue bonding and the engagement glue bonding solidify, and form functional layer on semiconductor element.And it can be more easily controlled
It is formed in the thickness uniformity of the functional layer of the semiconductor component surfaces.
Detailed description of the invention
Fig. 1 is the text flow chart for illustrating the first embodiment of the present invention；
Fig. 2 is the flow diagram for aiding in illustrating the first embodiment；
Fig. 3 is the schematic top plan view for aiding in illustrating the junction piece of Fig. 2；
Fig. 4 is the text flow chart for illustrating the second embodiment of the present invention；
Fig. 5 is the flow diagram for aiding in illustrating the second embodiment；
Fig. 6 is the text flow chart for illustrating the third embodiment of the present invention；And
Fig. 7 is the schematic top plan view for illustrating to engage another arrangement aspect of glue.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and embodiments.The same reference numbers in the drawings refer to functions
The same or similar element.
The dissimilar materials combination method of semiconductor element of the present invention can be applied to the material with the joint surface of the semiconductor element
Expect the encapsulating structure of different functional layers, the encapsulating structure then its visual structure and purposes decide whether to carry out follow-up process again.
Refering to fig. 1 to 3, a first embodiment of the dissimilar materials combination method of semiconductor element of the present invention is partly led with this
Volume elements part be photoelectric cell semi-finished product, and the photoelectric cell semi-finished product still needed to after forming the functional layer progress follow-up process for
Illustrate, when right actual implementation is not limited with this semiconductor element.
The photoelectric cell semi-finished product have a substrate 2, a hearth electrode 41 and one are formed in actuation layer on the hearth electrode 41
3, which is the multiple film layer structure of semiconductor, and the light of predetermined wavelength can be externally issued after receiving electric energy.Due to the photoelectricity
The related film layer structure and material of element semi-finished product are known to those skilled in the art, and non-is emphasis of the invention, therefore in
This no longer adds to illustrate.
It is noted that the aforementioned photoelectric cell semi-finished product are only that this combines method to illustrate the present invention, in practical reality
There is no particular restriction for Shi Shiqi structure, for example, the photoelectric cell semi-finished product structure also can have the photoelectricity of horizontal conducting structure
Element, in this way, can the need not have hearth electrode 41.
First implementation comprises the steps of:
Step 11, prepare a first substrate 100.
In detail, the purpose of the first substrate 100 is to be used to form coating, and can be selected from subsequent removal
The materials such as glass, ceramic substrate or flexible base plate, but not limited to this.
Then step 12 is carried out, in one patterned engagement glue 101 of formation on the first substrate 100.
In detail, which is that a printing glue material is utilized a web plate pair with predetermined pattern in a manner of wire mark
The surface printing of the first substrate 100, and form that pattern is corresponding with the pattern of the web plate engages glue in the first substrate 100
101.Since the engagement glue 101 is formed in the way of wire mark, film thickness and pattern can be by the controls of printing parameter
And the design of web plate, and can more precise control and have more diverse change in pattern.In this present embodiment, the patterning
Engagement glue 101 there is engagement blob of viscose 102 that is multiple general arranged into an array and being spaced each other.Wherein, each engagement blob of viscose 102
According to the needs of practical application, there can be an at least vacancy section, and each engagement blob of viscose 102 has a blob of viscose joint surface 102a,
It is engaged to the first joint surface 3a with semiconductor element.Wherein, blob of viscose joint surface 102a and the first of the semiconductor element
Joint surface 3a surface area is substantially identical, alternatively, the difference in surface areas on two joint surfaces is not more than 10%.
Specifically, which includes a main material, which can be selected from the organic or inorganic material of light transmission, example
Such as, epoxy resin, silica gel or fluoro-containing macromolecule material of high temperature resistant (150 DEG C of >) anti-UV etc. be can be selected from；In addition, the printing rubber
Material is also possible in the main material further added with other functional added materials, such as wavelength conversion material or quantum
Point material etc., and enable the patterned engagement glue 101 that can have different characteristics.Such as when the printing glue material is comprising the main material
With wavelength conversion material, and when the semiconductor element is illuminating part, then this patterned engagement glue 101 is subsequent can be used for changing hair
Light part externally issues photochromic, can be in addition, the penetrance after the engagement glue 101 is cured relative to the optical wavelength after conversion
Reach 50% or more.
In addition, it is noted that the purpose in the engagement blob of viscose 102 formation vacancy section is in order to which subsequent processing procedure needs
It asks, such as electrode or to be electrically connected processing procedure in being formed on the photoelectric cell semi-finished product using vacancy section as subsequent, therefore,
If it is subsequent be not required to carry out other processing procedures again if can be without enabling the engagement blob of viscose 102 formation vacancy section.
Then step 13 is carried out, multiple semiconductor elements are engaged and with the patterned glue 101 that engages by the patterning
Engagement glue 101 be formed by curing a functional layer 5, and form a second substrate in the second joint surface 2a of the semiconductor element
200。
The step 13 described further below, and supplement is thought refering to Fig. 2 and Fig. 3 simultaneously.The step 13 is with " unit " behaviour
Enabling " a photoelectric cell semi-finished product " as mode is a unit, described also as before, is elected to the photoelectric cell with horizontal conducting
(not shown) when semi-finished product, then the photoelectric cell semi-finished product may include the actuation layer 3 and the substrate 2, but can need not form the bottom
Electrode 41.Function about the actuation layer 3, hearth electrode 41 and substrate 2 is known to those skilled in the art, and hereby this is not repeated.
Respectively by the photoelectric cell semi-finished product of multiple units with its first joint surface 3a towards it is described engagement blob of viscose 102 blob of viscose joint surface
102a and after engaging the engagement blob of viscose 102 with the photoelectric cell semi-finished product, then the engagement glue 101 is solidified to form this
Then functional layer 5 forms the second substrate 200 on the second joint surface 2a of the semiconductor element.In this embodiment
In, the second joint surface 2a of the photoelectric cell semi-finished product is the surface of the substrate 2 far from the actuation layer 3.
It is further illustrated below referring again to Fig. 3.The functional layer 5 is formed after having multiple solidifications by the engagement blob of viscose 102
Cured block 51, and each cured block 51 have at least one vacancy section 511 corresponding with the vacancy section of the engagement blob of viscose 102.
The second substrate 200 then selects the material being easily removed, such as photodissociation adhesive tape or pyrolysis adhesive tape.In this present embodiment,
The second substrate 200 is illustrated for it can solve viscous photodissociation adhesive tape (UV tape) after shining UV light.
Then step 14 is carried out, which is removed, and is formed from the vacancy section of each cured block 51 511
One top electrode 42 or multiple top electrodes 42.
Specifically, which is to remove the first substrate 100 in the way of mechanical stripping or laser ablation etc. to enable
Expose on the surface of the functional layer 5.It is this field skill due to removing temporary substrate etc. in the way of mechanical stripping or laser ablation etc.
Art personnel are familiar with, therefore no longer add to repeat.
Then, conductive material is formed in the vacancy section 511 of the cured block 51 using wire mark mode or dispensing mode,
And the top electrode 42 connecting with the actuation layer 3 can be formed respectively at the vacancy section 511 after solidifying conductive material, and
Obtain multiple photoelectric cells.
Finally, carrying out step 15, the photoelectric cell is enabled to separate with the second substrate 200.
Specifically, the second substrate 200 is selected from photodissociation adhesive tape in this present embodiment, and therefore, which is benefit
The second substrate 200 is irradiated with UV light, enables the second substrate 200 lose viscosity in the region that UV light irradiates, makes the institute in the region
It states photoelectric cell to fall off from the second substrate 200 and separate with the second substrate 200, can be obtained and individually pushed up in the actuation layer 3
Face is formed with the photoelectric cell of the functional layer 5.
Refering to Fig. 4,5, one second embodiment of dissimilar materials combination method of semiconductor element of the present invention, implementing procedure with
The first embodiment is roughly the same, be different in the second embodiment in the step 13 be the several light that will be formed on wafer
Electric device semi-finished product directly engage 102 gluing of blob of viscose with described.And after the step 14 be implementation steps 16, do not implement such as Fig. 1
The step 15.
Specifically, which is that direct utilize is formed in a wafer with manufacture of semiconductor (wafer is considered as at this time
The second substrate 200) several photoelectric cell semi-finished product for being respectively provided with the hearth electrode 41 Yu the actuation layer 3, wafer is as light
The substrate of electric device semi-finished product, by the photoelectric cell semi-finished product with the first joint surface 3a and the blob of viscose for engaging blob of viscose 102
Joint surface 102a gluing；By taking the second substrate 200 is wafer as an example, which is (brilliant using the second substrate 200 is cut
Circle), enable the photoelectric cell be separated from each other, and obtain individually being formed with the photo elements of the functional layer 5 in 3 top surface of actuation layer
Part.It is worth noting that, the (not shown) when the choosing photoelectric cell semi-finished product with horizontal conducting, then the hearth electrode 41 can
To omit.
In addition, it is noted that when the semiconductor element of the aforementioned first embodiment and the second embodiment is in shape
It is subsequent without only needing to move the first substrate 100 when executing the step 14 when carrying out other processing procedures at the surface of the functional layer 5
It removes, is not required to re-form the top electrode 42, the step 15 or step 16 can be carried out.
Illustrate a 3rd embodiment of dissimilar materials combination method of the present invention below with reference to Fig. 5 and Fig. 6.The third is implemented
Example comprising step 71 to 75, the step 71 to 75 respectively with step 11 of the second embodiment to 16 similar, same sections
Hereby this is not repeated.Especially being in for the 3rd embodiment is non-with " unit " behaviour in: photoelectric cell semi-finished product of the step 73
The mode of work is bonded with the blob of viscose 102 that engages, but first prepares a second substrate 200, by the photoelectric cell semi-finished product with
Position corresponding with the engagement blob of viscose 102 on 100 surface of first substrate is located at, is fixed on the table of the second substrate 200
Face, then by the second substrate 200 for being loaded with the photoelectric cell semi-finished product be loaded with described first substrate for engaging blob of viscose 102
100 contrapositions, which bond, simultaneously to be solidified, or first prepares a second substrate 200, the photoelectric cell semi-finished product be fixed in advance this
The surface of two substrates 200, the engagement blob of viscose 102 on 100 surface of first substrate with be located at the photoelectric cell semi-finished product
Corresponding position forms in the surface of the first substrate 100, then the second substrate that will be loaded with the photoelectric cell semi-finished product
200 be loaded with it is described engage blob of viscose 102 the first substrate 100 contraposition bond and solidify.
It is in that is, the 3rd embodiment is different from the second embodiment in the photoelectric cell semi-finished product are not
It is former growth wafer to be formed directly into via manufacture of semiconductor, but the photoelectric cell semi-finished product are transferred to one and are different from original
The substrate (i.e. the second substrate 200) of growth wafer, then the photoelectric cell semi-finished product are fixed into (crystalline substance) in the second substrate 200
To carry out subsequent step.The second substrate 200 can select the wafer for being different from former growth in the present embodiment and thermal diffusivity is preferable
Material, such as aluminium oxide or aluminium nitride, and can more promote the reliability and efficiency of the photoelectric cell being separated from each other after cutting are right
In applied to semiconductor element spacing (< 0.1mm) and semiconductor component surfaces product (< 0.01mm2) it is smaller when dissimilar materials connect
It closes, this method can be easier to promote process rate and production efficiency.
In addition, it is noted that in some embodiments, when the first substrate 100 is transparent and in forming the functional layer 5
When being not necessarily to carry out other processing procedures on the actuation layer 3 afterwards, then after the engagement blob of viscose 102 is bonded with the semiconductor element 3,
The first substrate 100 and element of the second substrate 200 after compound can also be considered as without removing the first substrate 100
One module enables the first substrate 100 as the protective layer for protecting the semiconductor element and cured block 51.This mode is to being applied to
Semiconductor element spacing (< 0.1mm) and semiconductor component surfaces product (< 0.01mm2) it is smaller when dissimilar materials engagement, can be easier to
In promotion process rate and production efficiency.For example, when the functional layer 5 includes wavelength conversion material, the first substrate 100
It is greater than 50% relative to the optical wavelength penetrance after conversion.
Cooperation refering to fig. 1,4,6,7, in some embodiments, the step 12,72 are also possible to using multiple screen printing
Mode, and being formed in the first substrate 100 printing has different pattern different materials or various combination ingredient
Patterned engagement glue 101.For example, can use 3 times or multiple wire mark, a variety of capable of emitting different waves are blended 3 kinds or respectively
The printing glue material of long wavelength conversion material is respectively formed in the first substrate 100, and forms 3 or more in the first substrate 100
There is predetermined pattern to be distributed and can issue the engagement blob of viscose 102 of different wave length respectively for kind.Being in Fig. 7 can after being converted with light-color wavelengths
The engagement blob of viscose 102 of 3 kinds of feux rouges, green light, blue light different wave lengths is issued with staggered pattern, and because wavelength conversion material
It is different and 3 kinds after wavelength convert with different color temperature or the photochromic (figure of engagement blob of viscose 102 of a variety of white lights can be formed to blend concentration
In 7, the engagement blob of viscose 102 of capable of emitting different wave length is indicated with R, G, B, and connecing for capable of emitting different-colour white light is indicated with W1 to W3
Close blob of viscose 102) for illustrate, when actual implementation, is not limited with this structure aspect.Therefore, with the step 16 of the second embodiment
Or for the step 75 of the 3rd embodiment, can along each engagement blob of viscose 102 gap cutting (such as along A-A shown in Fig. 7,
Line B-B cutting), and obtain the minimum luminescence unit 102b with the functional layer 5 for red (or other photochromic)；Alternatively, can edge
A '-A ' shown in Fig. 7, B '-B ' wire cutting have several different or the identical wavelength conversion material in part functional layers to be formed
Recombination luminescence unit 102c composed by 5.Wherein, the minimum luminescence unit 102b that each recombination luminescence unit 102c is included
Number, can according to actual needs and application and determine its cutting mode, be not limited in mode disclosed by this schema.
In conclusion the present invention be intended to be formed in the semiconductor component surfaces and it is different from the constituent material on the surface should
Functional layer 5 forms multiple engagement blob of viscoses 102 in the first substrate 100 first with wire mark mode, due to the engagement blob of viscose 102
To be formed in the way of wire mark, it is therefore, subsequent that the engagement blob of viscose 102 is connected to the semiconductor element, and it is cured after
The thickness uniformity for being formed by the functional layer 5 is good.And when the semiconductor element is an illuminating part, which is containing wave
It is good due to being formed in the integral thickness uniformity of the functional layer 5 on the illuminating part surface with this method when long transition material, because
This, can promote the photochromic uniformity that the illuminating part finally externally issues.Further, since the functional layer 5 is via engagement blob of viscose 102
After hardening, and the pattern of the engagement blob of viscose 102 can control in advance by the design of Printing screen, and thickness can also be by
Wire mark state modulator, and can have more preferably processing procedure convenience, therefore may achieve the purpose of the present invention really.
Claims (18)
1. a kind of dissimilar materials combination method of semiconductor element, it is characterised in that: include:
Step A prepares first substrate；
Step B, in forming patterned engagement glue on the first substrate；And
The surface to be joined of at least semiconductor element is merged with engagement splicing by the engagement adhesive curing, is somebody's turn to do with enabling by step C
It engages glue and forms functional layer.
2. the dissimilar materials combination method of semiconductor element according to claim 1, it is characterised in that: at least semiconductor
Element has the actuation layer that is made of semiconductor material, which is to be engaged in the actuation layer surface, and the material of the gluing glue
Expect different from the material on the surface to be joined.
3. the dissimilar materials combination method of semiconductor element according to claim 1, it is characterised in that: step B is to utilize
Stencil printing forms the patterned engagement glue.
4. the dissimilar materials combination method of semiconductor element according to claim 1, it is characterised in that: the first substrate is glass
Glass, aluminium oxide, aluminium nitride or flexible base plate.
5. the dissimilar materials combination method of semiconductor element according to claim 1, it is characterised in that: also include step D, move
Except the first substrate.
6. the dissimilar materials combination method of semiconductor element according to claim 5, it is characterised in that: step D is to utilize
Mechanical stripping or laser ablation remove the first substrate.
7. the dissimilar materials combination method of semiconductor element according to claim 1, it is characterised in that: the engagement glue has more
It is a to be spaced each other and engagement blob of viscose arranged into an array, step C be by multiple semiconductor elements respectively with the engagement blob of viscose
Engagement.
8. the dissimilar materials combination method of semiconductor element according to claim 7, it is characterised in that: the engagement blob of viscose tool
There is the vacancy section for the surface exposure that can enable the semiconductor element.
9. the dissimilar materials combination method of semiconductor element according to claim 1, it is characterised in that: the engagement glue includes master
Material and the added material for being scattered in the main material, the main material are the organic or inorganic materials of light transmission, which is wave
Long transition material.
10. the dissimilar materials combination method of semiconductor element according to claim 9, it is characterised in that: the engagement glue has
Multiple engagement blob of viscoses, and the wavelength conversion material of the engagement blob of viscose may be the same or different.
11. the dissimilar materials combination method of semiconductor element according to claim 5, it is characterised in that: step C is also into one
The second substrate is engaged in at least surface of the semiconductor element far from the first substrate by step, enables at least semiconductor element
Sandwiched is fixed between the first substrate and the second substrate.
12. the dissimilar materials combination method of semiconductor element according to claim 11, it is characterised in that: this method also includes
Step E after being implemented in step D, step E are to enable this at least semiconductor element is separated with the second substrate.
13. the dissimilar materials combination method of semiconductor element according to claim 1, it is characterised in that: step C is will be more
A semiconductor element for being formed in the second substrate simultaneously with the engagement glue bonding.
14. the dissimilar materials combination method of 3 semiconductor elements according to claim 1, it is characterised in that: the engagement glue has
Multiple to be spaced each other and engagement blob of viscose arranged into an array, the engagement blob of viscose is with the relatively described semiconductor element in second base
The position of plate is formed in the first substrate, then the second substrate with the semiconductor element is remote with the semiconductor element
Blob of viscose engagement is engaged with described simultaneously from the surface to be joined of the second substrate.
15. the dissimilar materials combination method of semiconductor element according to claim 1, it is characterised in that: the engagement glue has
It is multiple to be spaced each other and engagement blob of viscose arranged into an array, step C are that multiple semiconductor elements are first formed in the second substrate,
Surface to be joined by the second substrate with the semiconductor element with the semiconductor element far from the second substrate again
It is engaged simultaneously with the engagement blob of viscose.
16. the dissimilar materials combination method of 3 or 15 semiconductor elements according to claim 1, it is characterised in that: also comprising step
Rapid F, step F are to cut the second substrate, to enable the semiconductor element be separated from each other.
17. the dissimilar materials combination method of 6 semiconductor elements according to claim 1, it is characterised in that: also comprising being implemented in
Step D between step C and step F, step D are to remove the first substrate.
18. the dissimilar materials combination method of 3 or 15 semiconductor elements according to claim 1, it is characterised in that: first base
Plate is transparent, and the first substrate is greater than 50% relative to the optical wavelength penetrance after conversion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107108216 | 2018-03-12 | ||
| TW107108216A TWI669207B (en) | 2018-03-12 | 2018-03-12 | Method for bonding heterogeneous materials of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110265343A true CN110265343A (en) | 2019-09-20 |
Family
ID=67911863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910150517.1A Pending CN110265343A (en) | 2018-03-12 | 2019-02-28 | The dissimilar materials combination method of semiconductor element |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110265343A (en) |
| TW (1) | TWI669207B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006093716A (en) * | 2004-09-24 | 2006-04-06 | Lg Electron Inc | White light-emitting device and method of manufacturing the same |
| CN1764707A (en) * | 2003-03-13 | 2006-04-26 | 日亚化学工业株式会社 | Light emitting film, luminescent device, method for manufacturing light emitting film and method for manufacturing luminescent device |
| CN101325238A (en) * | 2008-08-14 | 2008-12-17 | 罗维鸿 | White light LED and lighting conversion layer thereof |
| CN102129318A (en) * | 2010-12-29 | 2011-07-20 | 友达光电股份有限公司 | Touch panel and manufacturing method thereof |
| TW201242103A (en) * | 2011-03-25 | 2012-10-16 | Samsung Led Co Ltd | Light emitting diode, manufacturing method thereof, light emitting diode module, and manufacturing method thereof |
| CN105860863A (en) * | 2015-02-06 | 2016-08-17 | Lg化学株式会社 | Color conversion film and back light unit and display apparatus comprising the same |
| CN106876406A (en) * | 2016-12-30 | 2017-06-20 | 张希娟 | LED full-color display part structures and preparation method based on III V group-III nitride semiconductors |
| TW201728739A (en) * | 2015-09-29 | 2017-08-16 | Toray Industries | Phosphor composition, phosphor sheet, and molded article using same, led chip, led package, light-emitting device, backlight unit, display, and method for manufacturing led package |
-
2018
- 2018-03-12 TW TW107108216A patent/TWI669207B/en active
-
2019
- 2019-02-28 CN CN201910150517.1A patent/CN110265343A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1764707A (en) * | 2003-03-13 | 2006-04-26 | 日亚化学工业株式会社 | Light emitting film, luminescent device, method for manufacturing light emitting film and method for manufacturing luminescent device |
| JP2006093716A (en) * | 2004-09-24 | 2006-04-06 | Lg Electron Inc | White light-emitting device and method of manufacturing the same |
| CN101325238A (en) * | 2008-08-14 | 2008-12-17 | 罗维鸿 | White light LED and lighting conversion layer thereof |
| CN102129318A (en) * | 2010-12-29 | 2011-07-20 | 友达光电股份有限公司 | Touch panel and manufacturing method thereof |
| TW201242103A (en) * | 2011-03-25 | 2012-10-16 | Samsung Led Co Ltd | Light emitting diode, manufacturing method thereof, light emitting diode module, and manufacturing method thereof |
| CN105860863A (en) * | 2015-02-06 | 2016-08-17 | Lg化学株式会社 | Color conversion film and back light unit and display apparatus comprising the same |
| TW201728739A (en) * | 2015-09-29 | 2017-08-16 | Toray Industries | Phosphor composition, phosphor sheet, and molded article using same, led chip, led package, light-emitting device, backlight unit, display, and method for manufacturing led package |
| CN106876406A (en) * | 2016-12-30 | 2017-06-20 | 张希娟 | LED full-color display part structures and preparation method based on III V group-III nitride semiconductors |
Non-Patent Citations (1)
| Title |
|---|
| 彼得·拉姆: "《晶圆键合手册》", 30 November 2016 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201938353A (en) | 2019-10-01 |
| TWI669207B (en) | 2019-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103688378B (en) | Optical element, opto-electronic device and their manufacture method | |
| JP6069479B2 (en) | LED display and manufacturing method thereof | |
| CN105580144B (en) | Luminous die and correlation technique comprising wavelength conversion material | |
| JP5334966B2 (en) | Method for manufacturing photoelectric component | |
| TWI745820B (en) | Ultra-smooth sidewall pixelated array leds | |
| CN104081545A (en) | Solid-state lighting device and method of manufacturing same | |
| DE102007055170A1 (en) | Solid state light emitting cube optical preforms and methods and systems for making and assembling same | |
| TWI719794B (en) | Pixelated led array with optical elements | |
| CN106469776B (en) | Electronic device and manufacturing method thereof | |
| JP2012039013A (en) | Manufacturing method of light-emitting devices | |
| DE102013207226A1 (en) | Production of a Layer Element for an Optoelectronic Semiconductor Chip | |
| KR101867304B1 (en) | Method of fabricating light emitting apparatus | |
| KR20120106624A (en) | Semiconductor light emitting device wafer and method for manufacturing semiconductor light emitting device | |
| JP6220461B2 (en) | Optoelectronic component, optoelectronic device, optical element manufacturing method, and optoelectronic component manufacturing method | |
| CN101677070A (en) | Method for producing light-emitting diode and packaging adhesive material thereof by utilizing lithography process | |
| CN110265343A (en) | The dissimilar materials combination method of semiconductor element | |
| KR102555265B1 (en) | Micro led display panel and method for making the same | |
| TW201521260A (en) | Method of packaging electro-luminescent device | |
| CN108417674A (en) | Manufacture the method for LED device and the LED device of manufacture | |
| JP6409669B2 (en) | Light emitting device and manufacturing method thereof | |
| US20220238766A1 (en) | Forming a multicolor phosphor-converted led array | |
| KR20190130081A (en) | Micro lightemitting device substrate | |
| KR20190130082A (en) | Method of manufacturing a micro lightemitting device substrate | |
| CN108538989A (en) | A kind of specular removal single side shines CSP LED lamp beads and its manufacturing method | |
| TWI630732B (en) | Phosphor sheet supplying module, led package structure, and method for manufacturing led package structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190920 |