DE102013207226A1 - Production of a Layer Element for an Optoelectronic Semiconductor Chip - Google Patents

Abstract

The invention relates to a method for producing a layer element (100, 101) which can be arranged on at least one optoelectronic semiconductor chip (170). The method includes providing a substrate (130, 140, 131), and forming a layer assembly on the substrate (130, 140, 131) comprising an electrophoretically deposited layer (110) and disposed on the electrophoretically deposited layer (110) Potting layer (120). The electrophoretically deposited layer (110) is formed by performing at least one electrophoretic deposition process on the substrate (130, 140, 131). The method further comprises structuring the layer arrangement to form the layer element (100, 101). The invention further relates to a method for producing an optoelectronic component, and to a layer element which can be arranged on an optoelectronic semiconductor chip.

Description

The invention relates to a layer element and a method for producing a layer element. The layer element can be arranged on at least one optoelectronic semiconductor chip. The invention further relates to a method for producing an optoelectronic component.

An optoelectronic component may have an optoelectronic semiconductor chip for generating a light radiation and a layer element arranged on the semiconductor chip. An example of such a layer element is a platelet-shaped conversion element (converter, conversion layer), which can be used in a light emitting diode or LED chip (Light Emitting Diode) for radiation conversion. The conversion element has one or more conversion materials, also referred to as phosphor (s), on, and is arranged above in the light path of the semiconductor chip.

In order to produce white or other colored light by means of an LED device, a semiconductor chip can be used, which emits a narrow-band blue light radiation. The associated conversion element can be designed to convert portions of this light into one or more light radiations in the green to red spectral range. By additive mixing, in this way a light radiation with a desired color, for example a white light radiation, can be generated.

A conventional conversion element may comprise a layer of a matrix or potting material such as silicone, in which particles of one or more different conversion materials are embedded. It is advantageous if the conversion element has sharp edges on the front side. This makes it possible to apply a reflective layer, for example a silicone layer filled with TiO 2 particles, to a carrier substrate used for supporting the semiconductor chip, which surrounds the chip and its conversion element. By sharp edges of the conversion element can be avoided that the surface of the conversion element is wetted by the reflective potting.

Conversion elements can be produced, for example, by means of a screen printing process. Here, a filled with phosphor particles silicone paste can be used. The disadvantage, however, is that screen-printed conversion elements can have a convex shape in the region of the front side. As a result, it is not possible to cast a reflective layer without wetting the conversion element.

In an alternative manufacturing process, a thin potting layer is produced by molding a silicone paste filled with phosphor particles. The molded layer is further patterned to form separate conversion elements each having a shape corresponding to the front side of an LED chip. The disadvantage, however, is that the potting layer can have areas with increased phosphor concentration, for example in the form of so-called flow lines. Such layer areas are not suitable for use in an LED component. During structuring, the particle-filled casting layer is severed, for example by using a laser. This can result in a strong heat input and thus damage to the phosphor particles of the conversion elements, whereby the conversion efficiency can be significantly reduced.

The object of the present invention is to specify an improved solution for a layer element which can be arranged on at least one optoelectronic semiconductor chip.

This object is solved by the features of the independent claims. Further advantageous embodiments of the invention are specified in the dependent claims.

According to one aspect of the invention, a method for producing a layer element is proposed, which can be arranged on at least one optoelectronic semiconductor chip. The method comprises providing a substrate, and forming a layer assembly on the substrate, comprising an electrophoretically deposited layer and a potting layer disposed on the electrophoretically deposited layer. The electrophoretically deposited layer is formed by performing at least one electrophoretic deposition process on the substrate. The method further comprises structuring the layer arrangement to form the layer element.

The method provides a layer assembly on a substrate comprising a combination of an electrophoretically deposited layer and a potting layer. The electrophoretic layer is produced in one or more successive Electrophoretic Deposition (EPD) processes. The electrophoretic deposition is carried out (in each case) with the aid of a suitable electrophoresis bath comprising a solvent and particles. By applying an electrical voltage or generating an electric field, an accumulation of particles on the substrate can be caused. In this way, the electrophoretic layer, which has a particulate structure, are formed. Subsequently, the potting layer can be formed by applying the potting layer on the substrate side with the electrophoretically deposited layer. Following this, the layer arrangement is patterned to form the layer element. The layer element has the layers or partial regions of these layers previously produced in the different processes. The potting layer can bring about a mechanical stabilization as well as a protection of the electrophoretically deposited layer, so that handling of the layer element in subsequent processes is made possible.

The structured layer element may have a lateral shape, which is matched to a single optoelectronic semiconductor chip or to a front side of such a semiconductor chip. As a result, the laminate member formed separately from semiconductor chips can be disposed on a semiconductor chip. The layer element can also be formed with a lateral shape, which is tuned to a plurality of semiconductor chips, so that the layer element can be arranged on the plurality of semiconductor chips.

The method offers the possibility of avoiding or at least reducing disadvantages of conventional production methods for producing layer elements for optoelectronic semiconductor chips. Due to the use of the potting layer, the structured layer element can have a flat front side and sharp front edges. This makes it possible, in the production of an optoelectronic component, which is constructed with the layer element to form a reflective potting, without the layer element is wetted.

Furthermore, the method can be carried out in such a way that, during structuring of the layer arrangement, material removal or severing takes place exclusively or to a substantial extent at the casting layer. In contrast, the electrophoretic particulate layer can be exposed to no or only a relatively small and therefore negligible stress. Therefore, the severing simplifies, and damage to the electrophoretically deposited layer or the particles covered by this layer can be avoided or largely suppressed.

This proves to be advantageous if the layer element produced by the method is a conversion element for radiation conversion. The conversion element can be arranged on a front or light exit side of at least one optoelectronic semiconductor chip, so that a surface conversion (chip level conversion) is made possible.

In this connection, it is provided according to an embodiment that the formation of the electrophoretically deposited layer comprises a deposition of particles from a conversion material for radiation conversion or different particles from different conversion materials for radiation conversion. When using the thus formed layer element on an optoelectronic semiconductor chip, the phosphor particles contained in the electrophoretic layer can at least partially convert the light radiation (primary radiation) generated by the semiconductor chip into one or more light radiation of one or more other wavelength ranges. By overlaying or mixing the different light radiations, a desired light radiation can be generated. It is also possible that the phosphor particles contained in the electrophoretic layer substantially completely convert the light radiation of the semiconductor chip into one or more other light radiations.

In one embodiment of the electrophoretically deposited layer of a mixture of several conversion materials, particles of different conversion materials can be deposited on the substrate, for example in a common electrophoretic deposition process. Alternatively, particles of different conversion materials can also be applied to the substrate in successive electrophoretic deposition processes. In this way, the electrophoretically deposited layer can have partial layers of the different phosphors or conversion materials.

In the electrophoretically deposited layer, the phosphor particles may be packed relatively densely. If the layer or conversion element with the electrophoretically deposited layer is placed on an optoelectronic semiconductor chip, an efficient heat coupling to the semiconductor chip can be achieved due to the high packing density. This is associated with a reliable cooling of the or the phosphors in the lighting mode, and thereby a high conversion efficiency. The high packing density further allows achievement of high color orthogeneity.

In a further embodiment, forming the electrophoretically deposited layer comprises depositing scattering particles, reflective particles and / or pigments of a predetermined body color. In one embodiment of the layer element as a conversion element, in If the electrophoretically deposited layer can have phosphor particles as described above, the additional use of scattering particles can cause light scattering and thereby light mixing, so that the presence of a high color orthomogeneity can be further promoted.

For example, scattering particles may be electrophoretically deposited together with particles of one or more conversion materials. It is also possible to deposit scattering particles after the deposition of phosphor particles in a separate electrophoretic deposition process, so that they form a separate sub-layer of the electrophoretic layer.

Additional reflective particles made of a reflector material can ensure that the conversion element has a white body color in the top view. Another body color can be caused by the use of appropriate pigments. For example, after the deposition of phosphor particles, reflective particles or pigments of a given body color can be deposited in a separate electrophoretic deposition process, so that they form a separate sub-layer of the electrophoretic layer.

As stated above, the layer element produced by means of the method may be a conversion element in which the electrophoretically deposited layer comprises phosphor particles and optionally further particles. Alternatively, however, embodiments are also conceivable in which the electrophoretically deposited layer has no conversion material (s), but instead is formed only by depositing scattering particles, reflective particles and / or pigments having a predetermined body color. For example, a scattering layer element or a reflective layer element can be produced, wherein the electrophoretic layer has only scattering or reflective particles. It is also possible that the electrophoretic layer has only pigments. Such layer elements can be arranged on an optoelectronic semiconductor chip or a semiconductor chip equipped with a conversion element in order to bring about additional light scattering or provision of a white or else other body color.

The layer element can be produced with a lateral shape, which is matched to the at least one optoelectronic semiconductor chip. For this purpose, it may be provided to already produce the electrophoretic layer with a correspondingly adapted lateral structure. In this context, according to a further embodiment, it is provided that a layer region of the electrophoretically deposited layer is formed, which has a lateral shape which is matched to the at least one optoelectronic semiconductor chip. This makes it possible to carry out the structuring of the layer arrangement of electrophoretic layer and potting layer without or without appreciable damage to the electrophoretic layer.

For example, the layer area of the electrophoretic layer may have substantially the same lateral dimensions and contour as a front side of a single semiconductor chip. If the semiconductor chip has, for example, a front-side contact, the layer region of the electrophoretic layer can be formed with a recess adapted thereto.

In the structuring of the layer arrangement, removal of the potting layer in a region surrounding the layer region of the electrophoretic layer can take place exclusively or substantially, so that the layer element formed thereby can comprise the layer region of the electrophoretic layer and a layer region of the potting layer formed by the structuring. The layer region of the potting layer, which likewise may have a lateral shape or a correspondingly adapted contour (for example with a recess for a front contact) matched to the at least one optoelectronic semiconductor chip, may be larger in lateral dimensions than the layer region of the electrophoretic layer , In this way, the layer region of the electrophoretic layer may additionally be laterally surrounded by the encapsulation layer at the edge.

In a further embodiment, providing the substrate comprises forming an electrically conductive layer on the substrate. The electrically conductive layer serves as a deposition electrode on which particles can be deposited in an electrophoretic deposition process to produce the electrophoretic layer. For electrophoretic deposition, a corresponding electrical potential is applied to the electrically conductive layer. The (residual) substrate may be formed of (at least) an insulating material, for example a plastic material.

In another embodiment, the electrically conductive layer is patterned to provide an area on the substrate for electrophoretic deposition. This makes it possible, the electrophoretically deposited layer to form a reliable manner with a predetermined lateral structure.

This is equally possible in a further embodiment in which the electrically conductive layer is partially masked to provide an area on the substrate for electrophoretic deposition. The masking can be done by means of an insulating layer, which is structured accordingly.

In a further embodiment, the electrically conductive layer is removed after the formation of the electrophoretically deposited layer. The removal can be done, for example, in a wet-chemical manner. In this process, the electrically conductive layer located between the substrate and the electrophoretic layer can be dissolved out. In this case, a porosity present in the particulate electrophoretic layer can be utilized in order to expose the electrically conductive layer to a suitable etching medium. By removing the electrically conductive layer, the layer element without the electrically conductive layer can be provided. When using the layer element on an optoelectronic semiconductor chip, a radiation absorption possibly associated with the electrically conductive layer can be avoided in this way.

The method can also be carried out without an electrically conductive coating of the substrate. For example, the entire substrate may comprise an electrically conductive material. For the electrophoretic deposition, a corresponding electrical potential can be applied to the substrate. In this connection, it may further be contemplated to partially mask the substrate or substrate side to be deposited to provide an area on the substrate for electrophoretic deposition.

The structuring of the layer arrangement for forming the layer element can be carried out in different ways. One possible process for severing is, for example, a laser process. As a result, the structuring of the layer arrangement can be carried out in an accurate manner. Alternatively, other processes such as punching, sawing or cutting can be used. The cutting can be done with a cutting device, or by water jet cutting or sandblasting. It is also conceivable to combine several of the aforementioned processes.

The potting layer may comprise a suitable transparent potting material. This is preferably a silicone material, for example. The potting material can be applied in a flowable state, for example in pasty or (viscous) liquid form, on the substrate side with the electrophoretically deposited layer and subsequently cured.

The potting layer preferably has only the potting material, ie without filler or without particles. The structuring of the layer arrangement of electrophoretic layer and potting layer, in which a severance can take place only or substantially at the potting layer, can thus have no or a negligible influence on the layer element formed thereby. This applies for example to an embodiment of the layer element as a conversion element with phosphor particles in the electrophoretically deposited layer and performing a laser process for structuring. In this case, a heat input into the phosphor particles during laser separation can be significantly reduced.

In addition, compared to a particle-filled potting material results in a simplified process management for the formation of the potting layer. Furthermore, it is also possible to use relatively viscous casting materials which are difficult or impossible to process in particle-filled form.

Instead of carrying out the process with a particle-free potting layer without filler, a particle-filled potting layer may alternatively be used. In this context, according to a further embodiment, it is provided that the potting layer has particles embedded in the potting material. These may be particles of a conversion material or different particles of different conversion materials for radiation conversion, scattering particles, reflective particles and / or pigments of a given body color. In this way, functions and effects associated with such particles (radiation conversion, light scattering, causing a body color) can be additionally or additionally effected by the potting layer.

In order to minimize possible impairments due to the particle filling, for example when forming the potting layer or structuring the layer arrangement for forming the layer element, it may be considered to design the particle-filled potting layer in a coordinated manner. For example, a small particle size and / or particle density can be provided. With regard to structuring, for example by using a laser, it is possible, for example, to consider sensitive or heat-sensitive particles, in particular phosphor particles, exclusively or mostly in the electrophoretically deposited layer.

In a further embodiment, the potting layer is formed by performing a molding process. In this process, a coherent layer is formed by means of a tool, which may have a cavity, from a flowable starting or potting material. Subsequently, the layer can be cured or hardened, whereby the potting layer is provided. The potting material may, as described above, be particle-free or particle-filled. Performing a molding process makes it possible to form the potting layer with a relatively homogeneous layer thickness and consequently a relatively planar surface.

In particular, the molding process may be a compression-molding process, whereby the production of the molding layer having a homogeneous layer thickness with high reliability can be realized. In this case, the substrate having the electrophoretic layer is arranged on a tool part. Another tool part has a cavity in which the flowable potting material is arranged. During subsequent closing of the tool parts, the potting material is pressed against the substrate and the cavity is filled by the potting material.

Alternatively, another molding process can be used. This includes, for example, a process in which a flowable or molten potting material is supplied to a cavity of a tool after closing the associated tool parts. This includes, for example, a transfer molding process.

In a further embodiment, the method further comprises removing the substrate. The removal of the substrate, which can take place before or even after structuring of the layer arrangement of electrophoretic layer and potting layer, can be carried out in different ways. It is possible, for example, a detachment or removal of the substrate. Furthermore, it may be considered to carry out the substrate removal by means of a chemical reaction, wherein the substrate is at least partially dissolved.

With the aid of the method, a conversion element can be produced which has a plurality of phosphor layers arranged one above the other. For example, the electrophoretic layer can be formed with a plurality of sublayers arranged one above the other, which represent different phosphor layers. The potting layer may also be a phosphor layer with appropriate particle filling. Here, the electrophoretic layer can be or comprise only a single phosphor layer. Such layered phosphor systems can be realized with only a single molding process.

The method can not be used only for the production of a single layer element. Instead, it is possible to produce a plurality of layer elements in a common or parallel manner with a high throughput. In this context, according to a further embodiment, it is provided that the layer arrangement formed on the substrate has a plurality of adjacently arranged layer regions of at least one electrophoretically deposited layer on which the casting layer is arranged. The individual layer regions of the at least one electrophoretic layer can each have a lateral shape, which is matched to at least one optoelectronic semiconductor chip. The structuring of the layer arrangement is carried out such that a plurality of layer elements are formed. The individual layer elements each comprise a layer region of the at least one electrophoretically deposited layer and a layer region of the potting layer formed by the structuring. In this case, the layer regions of the potting layer can be larger from the lateral dimensions than the layer regions of the at least one electrophoretic layer.

If only one type of layer element is produced in parallel, several layer regions of a single or jointly electrophoretically deposited layer can be formed on the substrate. The layer regions can be connected to one another by connecting webs. When structuring the layer arrangement of electrophoretic layer and potting layer, an additional severing of the electrophoretic layer in the region of the connecting webs can take place. The connecting webs may be made relatively narrow, so that an optionally associated with the structuring action on the electrophoretically deposited layer may be relatively small and therefore negligible.

It is also possible to form different layer elements in a common manner, which differ from each other by different electrophoretic layers. For this purpose, layer regions of different electrophoretically deposited layers are formed on the substrate. This can be done by separate, successively performed deposition processes. Several layer regions of the different electrophoretically generated layers can be separated from each other via corresponding Connecting webs connected. When structuring the layer arrangement, a severing of the different electrophoretic layers in the region of the connecting webs can take place. These can be relatively narrow, so that influencing the electrophoretically deposited layers can be negligible.

The presence of the above-described connecting webs can be the result of joint electrophoretic production of a plurality of layer regions. When using a substrate which is provided with a structured electrically conductive layer, a corresponding electrical potential can be applied to the electrically conductive layer for the electrophoretic deposition at one point. The structured electrically conductive layer may be formed with layer regions and connecting webs between the layer regions, so that there is an electrical contact between the layer regions. Then the electrophoretic layer is formed.

In order to form layer regions of different electrophoretic layers, the electrically conductive layer can be structured into a plurality of groups of layer regions which are connected to one another separately via connecting webs. In this way, an electrical potential can be selectively applied to the different groups. As a result, in a deposition process, a material or material mixture can be deposited in a substrate region or on a group of layer regions. In another deposition process, another material or mixture of materials may be deposited in another substrate region or group. In this way it is possible, for example, to deposit phosphors or reflector materials close to each other on the substrate.

According to a further aspect of the invention, a method for producing an optoelectronic component is proposed. In the method, a layered element is produced by carrying out the above-described method or one of the above-described embodiments of the method. Subsequently, the layer element is arranged on at least one optoelectronic semiconductor chip. The layer element may, for example, be adhesively bonded to a front side of the at least one optoelectronic semiconductor chip.

The layer element may have a flat front and sharp front edges. This makes it possible, in the context of the production of the optoelectronic component, further to form a reflective encapsulation surrounding the semiconductor chip and the layer element on the periphery, without the layer element being wetted in the process. Due to the reflective encapsulation, it can be achieved that, during operation of the component, emission of light radiation takes place only via a front side of the layer element.

According to a further aspect of the invention, a layer element is proposed, which can be arranged on at least one optoelectronic semiconductor chip. The layer element has an electrophoretically deposited layer and a potting layer arranged on the electrophoretically deposited layer. The layered element can be produced according to the method described above or according to one of the above-described embodiments of the method, and as a result, for example, have a flat front side and sharp edges.

In one embodiment, the layer element is a conversion element. In this case, the electrophoretically deposited layer has at least one conversion material for radiation conversion. Production according to the method described above offers the possibility of suppressing damage to the at least one conversion material.

In the method of manufacturing the optoelectronic component and the sheet member, embodiments described above and details mentioned in relation to the method of manufacturing the sheet member may be applied in the same manner. Also, the above advantages may be present.

The above-explained and / or reproduced in the dependent claims advantageous embodiments and refinements of the invention can - except for example in cases of clear dependencies or incompatible alternatives - individually or in any combination with each other are used.

The above-described characteristics, features, and advantages of this invention, as well as the manner in which they will be achieved, will become clearer and more clearly understood in connection with the following description of exemplary embodiments, which will be described in more detail in conjunction with the schematic drawings.

The 1 to 9 show on the basis of schematic top views and schematic side sectional views of a joint production of a plurality of conversion elements, which are intended to be arranged on optoelectronic semiconductor chips, wherein a substrate is provided with a structured electrically conductive layer, side by side arranged layer regions of an electrophoretically deposited layer are formed, then applied to a potting and structuring process is performed.

10 shows a schematic side sectional view of an optoelectronic component, comprising an optoelectronic semiconductor chip and arranged on the semiconductor chip conversion element.

11 shows a flowchart in which steps of a method for producing an optoelectronic device are summarized.

12 shows a schematic side sectional view of a substrate with an electrophoretically deposited layer having a plurality of sub-layers.

13 shows a schematic plan view of a substrate with different electrophoretically deposited layers.

14 shows a schematic side sectional view of a substrate having an electrically conductive layer and a layer deposited thereon electrophoretically, wherein the electrically conductive layer is partially masked.

15 shows a schematic side sectional view of an electrically conductive substrate with a layer deposited thereon electrophoretically, wherein the substrate is partially masked.

16 shows a conversion element comprising an electrophoretically deposited layer and a particle filled potting layer.

17 shows a schematic side sectional view of an optoelectronic component, comprising a plurality of optoelectronic semiconductor chips and a single arranged on the plurality of semiconductor chips conversion element.

On the basis of the following schematic figures, embodiments of a method for the production of layer elements 100 . 101 described. The layer elements 100 . 101 are produced in the production of optoelectronic components and are intended to be arranged on optoelectronic semiconductor chips, in particular light emitting diode chips. In the production, a combination of different layer-forming processes, in the present case at least one electrophoretic deposition and a process for forming a potting layer, in particular a molding process, is used. This gives the possibility, with a high throughput platelet-shaped planar layer elements 100 . 101 with sharp edges.

The method can be used, in particular, for producing layer elements 100 . 101 can be used, with the aid of which a light emitted by optoelectronic semiconductor chips in lighting operation light radiation can be at least partially converted. The following description with reference to the figures therefore essentially relates to the production of such conversion elements used for radiation conversion 100 . 101 ,

Within the scope of production, known processes can be carried out from semiconductor technology and from the production of optoelectronic semiconductor components, and conventional materials can be used, so that this is only partially discussed. In addition to illustrated and described processes, further method steps may optionally be carried out. In the same way, it is conceivable that, in addition to components and structures shown and described, further components, structures and / or layers, for example in the case of the respective optoelectronic components, may be present. It is further noted that the figures are merely schematic in nature and are not to scale. In this sense, components and structures shown in the figures may be exaggerated or oversized for clarity.

Based on 1 to 11 becomes a possible method for producing optoelectronic components 180 described. The 1 to 9 illustrate the joint production of a plurality of conversion elements 100 , These are intended for use on optoelectronic semiconductor chips 170 of the components 180 to be arranged, and are separate from the semiconductor chips 170 generated. 10 shows a single, with such a conversion element 100 equipped optoelectronic component 180 , Steps of the manufacturing process are supplementary in the flow chart of 11 summarized, which is also referred to below.

The method is in one step 201 (see. 11 ) a substrate suitable for performing an electrophoretic deposition process 130 provided. The provided substrate 130 points, as in the 1 and 2 is illustrated in a plan view and in a side sectional view, a structured electrically conductive layer 140 on a page intended for the deposition or main page. The sectional view of 2 refers to the in 1 indicated by the section line AA cutting plane.

It should be noted that the substrate 130 in the 1 and 2 can only be shown in sections. Also in the other figures may be sectional representations.

The electrically conductive layer 140 serves as a deposition electrode for the deposition process. The (remaining) substrate 130 however, may be formed from an electrically non-conductive or insulating material, or may also comprise a plurality of non-conductive materials. Possible examples are glass, semiconductor materials such as GaN, plastics such as Teflon, Teflon-coated materials, or other plastics such as polyolefins (for example, high or low density polyethylene or polypropylene (PP)), polyvinyl chloride (PVC), polystyrene (PS), polyesters, polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), polyether ketones (PEEK), polyamides, for example polyphthalamide (PPA), polycyclohexylenedimethylene terephthalate (PCT), silicones, epoxides. When using a semiconductor material, the substrate 130 for example, in the form of a semiconductor wafer.

In the step 201 (see. 11 ) becomes the electrically conductive layer 140 initially over a large area, for example by means of a vapor deposition or by sputtering, on the intended for the electrophoretic deposition side of the substrate 130 applied and structured below. The electrically conductive layer 140 may include a metallic material such as Al, Ti, Ca, or a semiconductor material such as Si, ZnO, GaN. When using a semiconductor material, this may be additionally doped. The thickness of the electrically conductive layer 140 may be in a range of, for example, 50 to 500nm.

The structuring of the electrically conductive layer 140 serves to create areas on the substrate 130 to specify for the subsequently performed electrophoretic deposition. As in the supervisory presentation in 1 is shown, the electrically conductive layer 140 structured such that a plurality of matrix-shaped side by side on the substrate 130 arranged layer areas 141 is produced. The layer areas 141 have a lateral shape, each on the surface shape of a front side of a semiconductor chip 170 is tuned. This makes it possible, following this, an electrophoretically deposited layer 110 with layer areas 111 which in a similar manner to the surface shape of semiconductor chips 170 are coordinated.

In the present case, the layer areas 141 the electrically conductive layer 140 , as in 1 each shown a rectangular shape with a recess 148 in the area of a corner. The recess 148 is with regard to a front-side contact of the semiconductor chips 170 selected. The individual layer areas 141 are furthermore on relatively thin connecting webs 149 connected with each other. This ensures that the layer areas 141 electrically contacted with each other. As a result, the electrically conductive layer 140 be contacted at one point, in the context of an electrophoretic deposition to all layer areas 141 to create a common electrical potential.

The structuring of the electrically conductive layer 140 can be done in different ways. For example, the substrate may be considered 130 before the large-scale application of the layer 140 in areas where no electrophoretic deposition is desired, by photolithography techniques first to cover with a patterned layer of a resist or photoresist. This applies, for example, separating areas or saw trenches, which in a later stage of the process for separating the conversion elements 100 be formed, areas for the recesses 148 , etc. After application of the electrically conductive layer 140 , which is thus also disposed on the paint, the paint under the electrically conductive layer 140 be removed. As a result, located on the paint parts of the electrically conductive layer 140 to be peeled off, leaving the layer 140 , as in 1 shown only on selected areas of the substrate 130 remains.

The structuring of the electrically conductive layer 140 can also be done in other ways. For example, for structuring the layer 140 a laser can be used, or the structuring can be done by mechanical scribing.

Electrophoretic deposition, in the course of which as in the 3 and 4 shown a layer 110 on the electrically conductive layer 140 is formed, in a subsequent step 202 (see. 11 ) carried out. This is done with the electrically conductive layer 140 coated deposition substrate 130 , as in 4 shown in an electrophoresis bath 150 brought in. The electrophoresis bath 150 includes a solvent 152 and particles 151 , which are provided on the electrically conductive layer 140 to be separated.

For the deposition, using a voltage source 155 different electrical potentials to the electrically conductive layer 140 and the electrophoresis bath 150 created. With respect to the structured electrically conductive layer 140 can a contact, as stated above, take place in only one place. Due to the voltage and the electric field generated thereby becomes a migration of particles 151 to the substrate 130 caused. The particles to be separated 151 store in the area of the electrically conductive layer 140 so that gradually the layer 110 is formed. In this process, further, a partial bonding of particles takes place 151 , The electrophoretically deposited layer in this way 110 has a particulate structure, and is therefore hereinafter also referred to as a particle layer 110 designated.

3 shows a top view of the substrate 130 with the thereto or on the electrically conductive layer 140 electrophoretically deposited particle layer 110 , Due to the structured configuration of the electrically conductive layer 140 (see. 1 ) has the particle layer 110 a comparable shape with layer areas 111 on, which has relatively thin connecting webs 119 connected to each other. The individual layer areas 111 each have one on the surface shape of a front side of a semiconductor chip 170 matched rectangular shape with a recess 118 in the area of a corner.

With regard to the production of conversion elements 100 can the particles to be separated 151 In particular, particles of at least one conversion material for radiation conversion include. It is possible the particle layer 110 from only a single conversion material, ie that only one type of phosphor particles in the Elektrophoresebad 150 is used. It is also possible, the particle layer 110 from a mixture of different conversion materials form. For this purpose, the electrophoresis bath 150 a mixture of different phosphor particles of different (ie two or more) conversion materials which simultaneously on the electrically conductive layer 140 be deposited.

Possible conversion materials or phosphors from which the particle layer 110 can be formed, for example, rare earth-doped garnets, rare-earth-doped alkaline earth sulfides, rare-earth-doped thiogallates, rare-earth-doped aluminates, rare-earth-doped silicates, rare earth-doped orthosilicates, rare-earth-doped chlorosilicates, with rare earth doped alkaline earth silicon nitrides, rare earth doped oxynitrides, rare earth doped aluminum oxynitrides, rare earth doped silicon nitrides, or rare earth doped sialons.

An embodiment of the particle layer 110 from different phosphors can also by a multi-layered, generated in separate or successive deposition processes construction of the particle layer 110 be realized. This will be further discussed below 12 discussed in more detail.

Conversion particles suitable for electrophoretic deposition preferably have an average particle size (d 50 value) in the range from 2 to 25 μm. In particular, a size of the phosphor particles in the range of 7 to 13 μm is preferred. This is a reliable deposition and forming of the particle layer 110 possible.

It may be considered, the particle layer 110 not only from one or more conversion materials, but also from other materials. One possible example is a light-scattering material. For this purpose, the particles 151 of the electrophoresis bath 150 not only comprise phosphor particles, but also particles of a suitable light-diffusing material. Such particles can be deposited together with the phosphor particles and thereby the particle layer 110 form. A production of the conversion elements 100 with scattering particles allows inducing an isotropic light scattering.

Possible diffuser materials from which the scattering particles can be formed are, for example, SiO 2, Al 2 O 3 and TiO 2. It is also possible to use coated particles. For example, TiO 2 particles may have a coating of Al 2 O 3 or SiO 2 to reduce the photocatalytic activity of TiO 2. The scattering particles preferably have a particle size in the range of 100 to 500 nm.

The possibility of separately depositing scattering particles or also particles of other materials, for example a reflector material, in particular after depositing one or more phosphors, will also be discussed below 12 discussed in more detail.

After forming the particle layer 110 will be in another step 203 (see. 11 ) the electrically conductive layer 140 from the substrate 130 away. The particle layer 110 remains here as in 5 shown on the substrate 130 , The removal or dissolution of the between the particle layer 110 and the substrate 130 located layer 140 can be carried out in an etching bath by means of a suitable etching solution to cause a wet-chemical reaction. For example, a detachment of the layer may be considered 140 with an alkaline etching solution, for example KOH. In this process is exploited that the electrophoretically generated particle layer 110 a may have porous shape. As a result, the etching solution can pass through voids of the particle layer 110 to the electrically conductive layer 140 arrive and dissolve them.

By removing the electrically conductive layer 140 can the conversion elements 100 without the electrically conductive layer 140 getting produced. In this way, one with the electrically conductive layer 140 any associated radiation absorption can be avoided.

In a subsequent step 204 (see. 11 ), as in 6 shown a coherent potting layer 120 large area on the side of the substrate 130 with the particle layer 110 educated. For this purpose, preferably a molding process (Molding) is performed. The casting layer 120 which has a flat top or front is on both the particle layer 110 or the layer areas 111 and connecting bridges 119 as well as on the intervening, not on the particle layer 110 covered portions of the substrate 130 arranged.

The casting layer 120 has a transparent potting or matrix material such as a silicone material. The casting layer 120 may alternatively be formed from another transparent potting material. An example is a silicone hybrid material, which may additionally comprise an epoxy material or acrylate in addition to silicone. Another example of potting material is polysilazane. It is possible that the potting material during application or Molden addition also in cavities or pores of the particle layer 110 is introduced.

The casting layer 120 Can be formed without particle filling, ie that the Molden is performed with the still present in a flowable state (liquid or viscous) and particle-free potting material. This results in a simplified process management for the molding process. It is also possible to use a relatively viscous potting material which is difficult or impossible to process in particle-filled form.

The Molden or Übermolden of the particle layer 110 having substrate 130 with the potting material to form the potting layer 120 is carried out with the help of a suitable molding tool, with the help of which the shape of the potting layer 120 can be specified (not shown). The molding process can be, for example, compression molding. Here, the present in (viscous) liquid form potting material is supplied to the tool or a cavity of a mold half in an open state of the tool. The substrate 120 with the particle layer 110 is arranged on another tool half. When closing the tool, the potting material is pressed into the cavity and fills it out. Subsequently, the potting material can harden or harden. Performing the compression-molding process provides the opportunity of the potting layer 120 to produce reliably with a homogeneous layer thickness.

In a subsequent step 205 (see. 11 ) will be on the substrate 130 present layer arrangement of particle layer 110 and potting layer 120 structured. In this way, as in 7 shown, isolated conversion elements 100 on the substrate 130 educated. For example, a laser process may be performed for this purpose. For example, a pulsed laser such as an ns laser, a ps laser, or an fs laser may be used. It is also possible to use a CO2 laser. In addition to a laser cutting, the structuring can also be done in a mechanical manner.

When structuring, essentially the casting layer 120 in corresponding ablation areas, which the individual layer areas 111 the particle layer 110 surrounded and between the layer areas 111 present, removed. In this way, separate layer areas 121 the potting layer 120 generated, which on the individual layer areas 111 the particle layer 110 are arranged. It's not just the potting layer 120 , but to a small extent the particle layer 110 severed to the layer areas 111 the particle layer 110 separate or separate from each other. The severing of the particle layer 110 takes place in the area of narrow connecting bridges 119 the particle layer 110 instead of (not shown).

Every conversion element 100 has a layer region generated by structuring 121 the potting layer 120 on which one on a layer area 111 the particle layer 110 is arranged. The structuring is carried out such that the layer areas 121 the potting layer 120 , and thus the conversion elements 100 , in the plan view the same contour as the layer areas 111 the particle layer 110 own, so one of a front side of a semiconductor chip 170 corresponding rectangular shape with a recess in the region of a corner (not shown).

The individual layer areas 121 the potting layer 120 , and thus the conversion elements 100 , are preferably formed with lateral dimensions which are slightly larger than the lateral dimensions of the layer regions 111 the particle layer 110 , In this embodiment are at the conversion elements 100 the layer areas 111 the particle layer 110 , as in 7 shown laterally at the edge of the potting layer 120 surrounded or embraced. Excluded are points at which remaining, not eroded and thus at the edge of the conversion elements 100 Enriching sections of the severed connecting webs 119 present (not shown).

The design of the layer areas 121 the potting layer 120 with larger lateral dimensions compared to the layer areas 111 the particle layer 110 and that with respect to the particle layer 110 only in the area of the connecting webs 119 As a result of the severing, it is possible to have an effect on the particle layer associated with the structuring 110 to keep relatively small when performing a laser process in the form of heat input. Damage to the particle layer 110 As a result, the particles encompassed by this layer can be avoided or largely suppressed. A reduction in the conversion efficiency, as can occur in the manufacture of conventional conversion elements as a result of the cutting through of a phosphor-filled potting layer, can therefore not be present or only to a small and therefore negligible extent.

In the context of the production of optoelectronic components 180 Further, further processes are performed, which are shown in the flowchart of FIG 11 in a further step 206 are summarized. This includes, for example, as in 8th shown, a transfer or re-adhesion of the conversion elements 100 on a slide 135 and removing the substrate 130 , The foil 135 For example, it may be a UV film whose adhesion can be reduced or eliminated by exposure to UV radiation.

The removal of the substrate 130 What happens after lamination of the conversion elements 100 on the slide 135 can be done in different ways. It is possible, for example, the substrate 130 from the conversion elements 100 deduct or replace. It is also possible, the substrate 130 at least partially dissolve by means of a chemical reaction. For such removal, the substrate becomes 130 For example, formed from an alkaline-soluble, acid-soluble or water-soluble plastic material.

The conversion elements 100 be further, as in 9 shown on another slide 136 pasted over and from the other foil 135 separated. The foil 136 For example, it may be a so-called thermorelease film whose adhesive effect can be reduced or eliminated by exposure to temperature. Starting from the in 9 process stage shown are the conversion elements 100 from the slide 136 disconnected and, also in the context of the step 206 (see. 11 ), in a so-called layer transfer step on the front sides of optoelectronic semiconductor chips 170 put on or glued on. This process allows multiple conversion elements 100 together on the semiconductor chips 170 to be placed.

To illustrate shows 10 a single in this respect trained optoelectronic device 180 , which is an optoelectronic semiconductor chip 170 and a on a front and light exit side of the semiconductor chip 170 arranged conversion element 100 having. The conversion element 100 is with the particle layer 110 or the layer area 111 the particle layer 110 which is at the bottom of the conversion element 100 is present and the lateral dimensions of the front side of the semiconductor chip 170 corresponds to, on the semiconductor chip 170 placed. An attachment may be made via a transparent adhesive, for example a silicone adhesive (not shown).

The semiconductor chip 170 is how in 10 shown on a carrier substrate 171 arranged. Arranging the semiconductor chip 170 on the carrier substrate 171 can be before or after arranging the conversion element 100 on the semiconductor chip 170 respectively. The semiconductor chip 170 may have a front side contact present in the region of the front side, for example in the form of a bonding surface suitable for wire bonding (bonding pad), and a back side contact arranged on a rear side opposite thereto (not shown). About the backside contact, the semiconductor chip 170 electrically and mechanically, for example via a solder, with a mating contact of the carrier substrate 171 be connected. The front side contact of the semiconductor chip 170 can via a bonding wire, not shown, to a further mating contact of the carrier substrate 171 be connected. The conversion element 100 becomes in this respect on the semiconductor chip 170 arranged that the front side contact via the above-described recess of the conversion element 100 is released and thus can be contacted.

The semiconductor chip 170 may in particular be a light-emitting diode chip, so that the component 180 represents an LED component. The semiconductor chip 170 is designed to generate a primary light radiation, for example a blue light radiation, during operation when electrical energy is supplied. This light radiation can over the front of the semiconductor chip 170 are discharged and thereby in the conversion element 100 or the particle layer 110 enter. The included here Phosphor particles may at least partially convert the primary light radiation into one or more light radiations of one or more other wavelength ranges, for example in the green to red spectral range. In this way, a light radiation with a desired color, for example, a white light radiation, generated, which via the conversion element 100 or the potting layer 120 can be delivered.

At the conversion element 100 can be those in the particle layer 110 contained phosphor particles are packed relatively close. This results in an efficient heat coupling to the semiconductor chip 170 , As a result, a reliable cooling of the phosphor particles and thereby a high conversion efficiency can be achieved in lighting operation. The high packing density also allows a high color orthomogeneity.

Another advantage is that the conversion element 100 or the associated layer area 121 the potting layer 120 on the front can have a flat surface and sharp edges. In this way, the possibility is given in the context of the manufacture of the device 180 an additional reflective potting 185 , for example in the form of a filled with TiO2 particles silicone layer on the carrier substrate 171 applied. As in 10 is indicated, the reflective casting 185 to the front of the conversion element 100 extend and the semiconductor chip 170 and the conversion element 100 Surrounded circumferentially. The sharp edges of the conversion element 100 prevent the surface of the conversion element 100 with the reflective casting 185 is wetted. Through the reflective casting 185 can be achieved that during operation of the device 180 a light radiation only over the front of the conversion element 100 is delivered.

It is possible the device 180 with only a single, on the carrier substrate 171 arranged semiconductor chip 170 to realize. Alternatively, the device 180 with several, on the carrier substrate 171 juxtaposed semiconductor chips 170 be formed, wherein on each semiconductor chip 170 an associated conversion element 100 is arranged (not shown). In this embodiment, the device 180 be a chip or LED module. This can also be a reflective potting 185 be provided, which between the chips 170 and conversion elements 100 is arranged and surrounds this.

The method described above, in particular the production of conversion elements 100 , can be modified in many ways, as will be described in more detail below with reference to further embodiments. It should be noted that matching or comparable manufacturing and subsequent processes as well as identical and equivalent components are not described again in detail below. For details of matching features, processes, potential benefits, etc., reference is made to the above description. It is further to be understood that details referred to in relation to one of the following embodiments may also apply to other embodiments. It is also possible to combine two or more of the embodiments shown.

In a possible modification of the method, for example, instead of the films 135 . 136 other, optionally present as films substrates are used. It is also possible, for example, to re-apply conversion elements 100 to provide only a substrate or a film before the conversion elements 100 on semiconductor chips 170 be transferred. Furthermore, the conversion elements 100 immediately after removing the substrate 130 , so without further pasting, on semiconductor chips 170 to be ordered. Furthermore, a conversion element 100 , deviating from 10 , also with the layer area 121 the potting layer 120 on a front side of a semiconductor chip 170 to be ordered.

In a further modified embodiment, the structuring of the layer arrangement of particle layer 110 and potting layer 120 for forming isolated layer elements 100 (Step 205 in 11 ) not on the substrate 130 carried out. This becomes the substrate 130 , different from the 6 . 7 , previously from the still unstructured layer arrangement 110 . 120 removed, and becomes the layer arrangement 110 . 120 only later in the conversion elements 100 structured (not shown). The removal of the substrate 130 can also be removed by stripping or relaminating, or by means of a chemical reaction in which the substrate 130 at least partially resolved. In structuring, the layer arrangement 110 . 120 be arranged on a substrate optionally present as a film. In this context, it may further be considered that the layer arrangement 110 . 120 for the structuring step with the potting layer 120 is arranged on the relevant substrate. The structuring can here, also in contrast to the 6 . 7 , from the opposite side of the layer arrangement 110 . 120 forth, so the side on which the particle layer 110 is present.

Another variant is the structuring of the layer arrangement 110 . 120 Not with the help of a laser, but to perform in a mechanical way. This can also be done on the substrate 130 or alternatively on another, optionally present as a film substrate. Mechanical separation is possible, for example, by punching, sawing or cutting. The cutting can be carried out with a cutting device, for example in the form of a rolling knife, or alternatively by water jet cutting or sandblasting. In structuring, the substrate may 130 , or the other substrate, optionally with isolated. After singulation, separate sections of the substrate can be made 130 or the other substrate.

12 illustrates another embodiment which may be used in the method. This is in the step 202 (see. 11 ) a multi-layer particle layer 110 on the deposition substrate 130 or on its structured electrically conductive layer 140 generated.

The particle layer 110 can, for example, as in 12 shown, with two superimposed and composed of particles different partial layers 112 . 113 be formed. For this purpose, two successive electrophoretic deposition processes in which the substrate 130 each arranged in a separate Elektrophoresbad with particles carried out. It is possible the particle layer 110 also with a larger number of superimposed different sub-layers of particles form, each sub-layer is formed in a separate deposition process.

For example, multiple sublayers may be considered to provide layering of different phosphors or phosphor blends. In relation to 12 For example, the lower, first generated sublayer 113 a first phosphor and the upper sub-layer 112 have a second phosphor. The individual partial layers can also differ from each other in other ways, for example by only one of the partial layers 112 . 113 has a mixture of different phosphors, or both partial layers 112 . 113 have different phosphor mixtures. Furthermore, one of the partial layers 112 . 113 or can both sublayers 112 . 113 be formed with additional scattering particles. Such variants can also be used in embodiments with more than the two partial layers shown 112 . 113 be provided.

With respect to a multi-layered structure of the particle layer 110 can also be provided to deposit in a separate deposition after deposition of the phosphor or another material. For example, only scattering particles can be deposited, which thus the upper or uppermost sub-layer of the particle layer 110 can form. With regard to the two-layered design of 12 can, for example, the sub-layer 112 be formed from scattering particles, whereas the other sub-layer 113 Has phosphor particles for radiation conversion.

It is also possible to deposit particles of a highly reflective material after the deposition of the phosphor or phosphors in a separate deposition process, around the upper or uppermost partial layer of the particle layer 110 (related to 12 the sub-layer 112 ) to build. This can be achieved that the conversion elements 100 have a white body color in the supervision. Possible materials from which reflective particles can be formed are, for example, SiO 2, Al 2 O 3 and ZrO 2. Again, if appropriate, the use of coated particles to reduce the photocatalytic activity may be provided.

In the same way, it may be considered to deposit inorganic pigments with a different body color after the deposition of the phosphor or phosphors, around the upper or uppermost sub-layer of the particle layer 110 (related to 12 the sub-layer 112 ) to create. In this way, the presence of a desired or changed body color of the conversion elements 100 be effected in the plan view. Possible materials for such pigments are, for example, oxides, sulfides or cyanides of transition metals or rare earths.

The method can furthermore be carried out in such a way that different layer or conversion elements 100 , which differ from each other by different particle layers, are formed in a parallel manner. The particle layers may be formed, for example, by different phosphors or phosphor mixtures, an embodiment of a particle layer of a phosphor and another particle layer of a phosphor mixture, a single-layer structure of a particle layer and a multi-layer structure of another particle layer, an embodiment of a particle layer with additional particles such as Diffuse particles and another particle layer without such particles, different multilayer designs, etc. different. For this purpose it can be provided, the different particle layers independently in separate electrophoretic deposition processes on the substrate 130 train. It is also possible that different particle layers (at least) have a common electrophoretically generated layer or partial layer.

To illustrate this variant shows 13 in a supervisory view the substrate 130 on which four different electrophoretically generated particle layers 110 . 115 . 116 . 117 are arranged. The formation of the particle layers 110 . 115 . 116 . 117 takes place in the context of the step 202 (see. 11 ). The individual particle layers 110 . 115 . 116 . 117 each have arranged in a line layer areas 111 on. These again have the above-described rectangular shape and recess 118 , Only the layer areas 111 same particle layer 110 . 115 . 116 . 117 are via connecting bridges 119 connected with each other. This stems from the separate or successive production of the particle layers 110 . 115 . 116 . 117 ago.

For the production of different particle layers 110 . 115 . 116 . 117 previously becomes the electrically conductive layer 140 on the substrate 130 formed with such a structure that in a corresponding manner linearly arranged and separately connected groups of layer areas 141 available. The separate connection is again via connecting bridges 149 manufactured (not shown). As a result, the individual groups can be made up of stratified areas 141 a selective electrical potential can be applied. This makes it possible to selectively induce deposition of particles on one or more of the groups in an electrophoretic deposition process, whereas deposition in the range of one or more other groups does not occur. On the layer areas 141 and connecting bridges 149 the electrically conductive layer 140 In this way, the layer areas can be separated from each other 111 and connecting bridges 119 the different particle layers 110 . 115 . 116 . 117 be trained as it is in 13 is shown.

Thereafter, the other of the above processes, ie, for example, the removal of the electrically conductive layer 140 , the application of the potting layer 120 and structuring to form discrete conversion elements 100 (Steps 203 to 205 , not shown). The structuring can be carried out in such a way that essentially the casting layer 120 in corresponding ablation areas, which the individual layer areas 111 the particle layers 110 . 115 . 116 . 117 surrounded and which between the layer areas 111 present, is removed. Cutting can also occur at the connecting webs 119 the particle layers 110 . 115 . 116 . 117 respectively. The layer areas formed by structuring 121 the potting layer 120 can also be laterally larger than the layer areas here 111 the particle layers 110 . 115 . 116 . 117 so that the layer areas 111 on the edge apart from places at which remaining sections of the severed connecting webs 119 present, from the potting layer 120 are surrounded.

14 shows a further embodiment which can be used in the method. In this variant, the on the substrate 130 formed electrically conductive layer 140 undergone no structuring. Instead, the over the entire substrate side large-scale layer 140 in the context of the step 201 (see. 11 ) in part in those areas in which no electrophoretic deposition is to take place, with an insulating layer 160 masked. The insulating layer 160 For example, it may be formed of SiO 2 or Al 2 O 3. In the uncovered areas of the layer 140 can in the step 202 (see. 11 ) Particles on the layer 140 are deposited to the particle layer 110 or adjacent layer areas 111 the particle layer 110 with a on the surface shape of semiconductor chips 170 form a coordinated form.

The insulating layer 160 can initially large-scale on the electrically conductive layer 140 applied and subsequently structured. The insulating layer 160 can be structured such that there are separate opening areas in which the layer 140 exposed. In this way, the particle layer 110 only with the layer areas 111 and without connecting connecting webs 119 be formed. As a result, a later performed structuring without a cutting through the particle layer 110 respectively.

After forming the layer areas 111 the particle layer 110 using the masking layer 160 may be the other of the above processes, ie, for example, the removal of the electrically conductive layer 140 , the application of the potting layer 120 and structuring to form discrete conversion elements 100 (Steps 203 to 205 , not shown). In structuring, not only the potting layer 120 in the ablation regions described above (ie, in regions containing the individual layer regions 111 the particle layer 110 surrounded) can be removed, but can additionally between the layer areas 111 present layer 160 or part of the layer 160 be removed. The layer areas formed by structuring 121 the potting layer 120 can also be laterally larger than the layer areas here 111 the particle layer 110 so that the layer areas 111 at the edge of the potting layer 120 can be surrounded. The layer areas 111 the particle layer 110 In addition, they can additionally be provided at the edge by non-removed sections of the insulating layer 160 be surrounded. Also after removing the substrate 130 can the isolated conversion elements 100 such remaining portions of the insulating layer 160 exhibit.

In a further embodiment, the method becomes without removal of the electrically conductive layer 140 (Step 203 in 11 ) carried out. In this way you can convert elements 100 are formed, in which adjacent to the particle layer 110 (or to the layer area 111 and optionally remaining portions of the severed connecting webs 119 ) the layer 140 present (not shown).

In this embodiment, in the formation of isolated conversion elements 100 structured (step 205 in 11 ) in addition to the removal of the potting layer 120 In the corresponding ablation areas also a cutting through of the layer 140 respectively. For example, the layer 140 in the in 1 shown structured form, so that a severing of the layer 140 in the area of the connecting webs 149 can take place. This also relates to an embodiment in which several groups of layer areas 141 the layer 140 separately via connecting bridges 149 connected as it is based on 13 was explained. Regarding the basis of 14 variant described, the large-area layer 140 in ablation areas, which the individual layer areas 111 the particle layer 110 be surrounded, removed.

An educated in this way and an additional portion of the electrically conductive layer 140 having conversion element 100 For example, with the electrically conductive layer 140 on a front side of a semiconductor chip 170 to be ordered. In order to avoid radiation absorption, the electrically conductive layer can be considered 140 from a transparent material, for example doped ZnO.

In a further embodiment, the method is without an electrically conductive layer 140 which also removes the layer 140 can be omitted. For this purpose, in the step 201 (see. 11 ), as in 15 shown instead of the coated substrate 130 an electrically conductive and with a structured insulating layer 160 provided substrate 131 provided. The substrate 131 For example, it may be formed of a metallic material or a doped semiconductor material. The insulating layer 160 covered, comparable to the basis of 14 variant described, substrate areas in which no electrophoretic deposition is to take place. In the uncovered areas of the substrate 131 can in the step 202 (see. 11 ) Particles are deposited to the particle layer 110 or adjacent layer areas 111 the particle layer 110 with a on the surface shape of semiconductor chips 170 form a coordinated form. For this purpose, a corresponding electrical potential to the substrate 131 created.

The insulating layer 160 can initially large-scale on the substrate 131 applied and subsequently structured. The insulating layer 160 can be structured such that there are separate opening areas in which the substrate 131 exposed. In this way, the particle layer 110 only with the layer areas 111 and without connecting connecting webs 119 be formed, so that a later performed structuring without a severing of the particle layer 110 can be done.

After forming the layer areas 111 the particle layer 110 may be further of the above processes, ie, for example, the application of the potting layer 120 and structuring to form discrete conversion elements 100 (Steps 204 and 205 , not shown). In structuring, not only the potting layer 120 be removed in the respective Abtragungsbereichen, but may additionally between the layer areas 111 the particle layer 110 present layer 160 or part of the layer 160 be removed. The layer areas formed by structuring 121 the potting layer 120 can also be laterally larger than the layer areas here 111 the particle layer 110 so that the layer areas 111 at the edge of the potting layer 120 can be surrounded. The layer areas 111 the particle layer 110 can also be on the edge of additional sections of the insulating layer not removed 160 be surrounded.

After removing the substrate 131 , which also here in the context of the step 206 (see. 11 ), the isolated conversion elements can 100 such remaining portions of the insulating layer 160 exhibit. It is also possible that the subsections of the insulating layer 160 together with the substrate 131 be removed. Alternatively, the substrate 131 optionally together with the insulating layer 160 before structuring to form discrete conversion elements 100 be removed. The structuring can be carried out on another substrate.

In a further embodiment, the method is used with a particle-filled potting layer 120 carried out. To illustrate shows 16 a trained in this regard conversion element 100 , The layer area 121 the potting layer 120 has particles arranged in the potting material 125 on. These may be particles of a conversion material or a mixture of different particles of different conversion materials for radiation conversion, scattering particles, reflective particles and / or pigments of a given body color. In this way, the functions associated with such particles above may additionally or additionally be provided by the potting layer 120 be effected.

To possible impairments due to the particle filling, for example when forming or Molden the potting layer 120 or structuring to form discrete conversion elements 100 (Steps 204 . 205 , see. 11 ), the particle-filled casting layer can be kept small 120 for example, be trained on this. With regard to the molding process, for example, a small size and / or density of the particles 125 be provided. With regard to the structuring, for example by using a laser, in which a severing only or substantially at the potting layer 120 may take place, sensitive or heat-sensitive particles such as in particular phosphor particles exclusively or mostly electrophoretically to form the particle layer 110 deposit.

The method can furthermore be carried out in such a way that conversion elements 101 which are formed on a plurality of optoelectronic semiconductor chips 170 can be arranged. To illustrate shows 17 a trained in this regard optoelectronic device 181 which several on a carrier substrate 171 arranged optoelectronic semiconductor chips 170 , For example, LED chips, has. The component 181 may be a chip or LED module. On the front sides of the semiconductor chips 170 is a single conversion element 101 arranged. The conversion element 101 points, comparable to a conversion element 100 , a layer area 111 an electrophoretically deposited particle layer 110 and a layer area 121 a potting layer 120 on. The conversion element 101 is unlike a conversion element 100 formed with a lateral shape, which on the plurality of semiconductor chips 170 is tuned. As in 17 is indicated, can in the conversion element 101 the layer area 121 the potting layer 120 laterally larger than the layer area 111 the particle layer 110 so that this too is laterally at the edge of the potting layer 120 is surrounded.

In operation of the device 181 can the semiconductor chips 170 generate a primary light radiation, which in the conversion element 100 or in its particle layer 110 occur and can be converted by at least partially contained in one or more light radiation of one or more other wavelength ranges by phosphor particles contained here. A manufacture of the device 181 and in particular the conversion element 101 can be done according to the approaches outlined above. For details, for example for the joint production of several conversion elements 101 , a possible multi-layered structure of the particle layer 110 , a parallel production of conversion elements 101 With different particle layers, etc., reference is therefore made to the above statements. Furthermore, also in the device 181 come into consideration, an additional reflective encapsulation on the carrier substrate 171 apply, which the semiconductor chips 170 and the conversion element 101 surrounds circumferentially, so that a light radiation only over the front of the conversion element 101 is delivered (not shown).

The embodiments explained with reference to the figures represent preferred or exemplary embodiments of the invention. In addition to the described and illustrated embodiments, further embodiments are conceivable which may comprise further modifications or combinations of features. For example, other materials may be used in place of the above materials, and other numbers, such as film thicknesses, particle sizes, etc., may be substituted for other numbers.

Optoelectronic semiconductor chips 170 on which the layer elements can be arranged, as stated above, have a front and a rear side contact. Embodiments with, for example, only two front-side contacts or only two back-side contacts are also possible. With regard to the first variant, matched conversion or layer elements with a rectangular shape and two recesses for the front side contacts can be formed thereon. With regard to the second variant, conversion or layer elements with a rectangular shape can be formed without such recesses.

The second variant can, for example, for the device 181 be provided. Here, the semiconductor chips 170 have only two backside contacts, with which the semiconductor chips 170 on the carrier substrate 171 are arranged. The conversion element 101 can therefore have a rectangular shape supervision. When using semiconductor chips 170 with front side contacts, the conversion element 101 however, have corresponding recesses.

Furthermore, optoelectronic semiconductor chips 170 are used, which emit in operation instead of a blue light radiation, a light radiation of another spectral range, for example, the ultraviolet spectral range. Also, optoelectronic components 180 . 181 be realized, which can deliver a different color of light radiation instead of a white.

In terms of based on 13 explained embodiment, it is conceivable layer areas 141 the electrically conductive layer 140 on which layer areas 111 different particle layers 110 . 115 . 116 . 117 be provided to provide in a deviating from the line shape shown arrangement or grouping. Furthermore, instead of four different particle layers 110 . 115 . 116 . 117 other numbers of different particle layers are generated.

Another possible modification is to use a different molding process to form a potting layer instead of compression molding 120 perform. This includes, for example, a process in which a flowable or molten potting material of a cavity of a tool only after closing the associated tool parts, wherein on one of the tool parts, a substrate 130 respectively. 131 with a particle layer 110 is arranged, is supplied. Subsequently, the potting material can harden or harden. This includes, for example, a transfer molding process.

In addition, the possibility exists for the formation of a potting layer 120 to perform another layering process. One possible example is a potting process. In this process, a frame is created on the substrate in question 130 . 131 formed, which encloses a substrate region. In this area is (at least) an electrophoretically deposited particle layer 110 arranged. Subsequently, the substrate area enclosed by the frame is filled or potted with a flowable potting material, which may be particle-free or particle-filled. Subsequently, the potting material can harden or harden.

It is furthermore possible not to use the method described above or one of the modifications mentioned, or not only for the production of conversion elements. In the same way, it is conceivable layer elements 100 . 101 without producing a conversion material. Such layer elements 100 . 101 can be an electrophoretically generated particle layer 110 in which, for example, only particles of a scattering material, a reflective material and / or pigments of a predetermined body color are arranged. Such layer elements 100 . 101 can be arranged on (at least) one optoelectronic semiconductor chip or (at least) one semiconductor element equipped with a conversion element in order to bring about additional light scattering or provision of a white or else other body color. Furthermore, if appropriate, layer elements can be considered 100 . 101 in which phosphor particles only in the potting layer 120 , and other particles in the particle layer 110 are arranged.

It is also possible, the structuring of a layer arrangement of a particle layer 110 and a potting layer 120 perform such a way that layer areas 121 the potting layer 120 be formed with the same lateral dimensions as layer areas 111 the particle layer 110 , In this way, with the thus isolated conversion elements 100 . 101 the layer areas 111 the particle layer 110 deviating from the 7 . 17 not lateral to the edge of the potting layer 120 surround.

In addition, it is conceivable to have a large-scale particle layer 110 Electrophoretic deposition, instead of the particle layer 110 in structured form (ie with layer areas 111 and optionally connecting webs 119 ) train. This can be a casting layer 120 be applied over a large area. Subsequently, the layer arrangement of particle layer 110 and potting layer 120 in individual layer or conversion elements 100 . 101 be structured. In this case, a severing takes place both at the potting layer 120 as well as at the particle layer 110 , To damage the particle layer 110 may be considered to suppress the structuring merely mechanically as a result of structuring.

While the invention has been further illustrated and described in detail by way of preferred embodiments, the invention is not limited by the disclosed examples, and other variations can be derived therefrom by those skilled in the art without departing from the scope of the invention.

LIST OF REFERENCE NUMBERS

100, 101

Layer element / conversion element

110

particle layer

111

layer region

112, 113

sublayer

115, 116

particle layer

117

particle layer

118

recess

119

connecting web

120

cast layer

121

layer region

125

particle

130, 131

substratum

135, 136

foil

140

Electrically conductive layer

141

layer region

148

recess

149

connecting web

150

electrophoresis

151

particle

152

solvent

155

voltage source

160

Insulating layer

170

Semiconductor chip

171

carrier substrate

180, 181

module

185

Reflective potting

201-206

step

A-A

intersection

Claims (16)

Method for producing a layer element ( 100 . 101 ), which is mounted on at least one optoelectronic semiconductor chip ( 170 ), comprising the method steps: providing a substrate ( 130 . 140 . 131 ); Forming a layer arrangement on the substrate ( 130 . 140 . 131 ), comprising an electrophoretically deposited layer ( 110 ) and one on the electrophoretically deposited layer ( 110 ) ( 120 ), wherein the electrophoretically deposited layer ( 110 ) by performing at least one electrophoretic deposition process on the substrate ( 130 . 140 . 131 ) is formed; and structuring the layer arrangement to form the layer element ( 100 . 101 ). The method of claim 1, wherein forming the electrophoretically deposited layer ( 110 ) comprises depositing particles of a conversion material for radiation conversion or different particles of different conversion materials for radiation conversion. Method according to one of the preceding claims, wherein the formation of the electrophoretically deposited layer ( 110 ) comprises depositing scattering particles, reflective particles and / or pigments of a given body color. Method according to one of the preceding claims, wherein a layer region ( 111 ) of the electrophoretically deposited layer ( 110 ) is formed, which one on the at least one optoelectronic semiconductor chip ( 170 ) has a coordinated lateral shape. Method according to one of the preceding claims, wherein the provision of the substrate, a formation of an electrically conductive layer ( 140 ) on the substrate ( 130 ). Method according to claim 5, wherein the electrically conductive layer ( 140 ) is patterned or partially masked to provide an area on the substrate for electrophoretic deposition. Method according to one of claims 5 or 6, wherein the electrically conductive layer ( 140 ) after forming the electrophoretically deposited layer ( 110 ) Will get removed. Method according to one of the preceding claims, wherein the substrate ( 131 ) is partially masked to provide an area on the substrate for electrophoretic deposition.  The method of claim 1, wherein structuring the layer assembly comprises performing one of the following processes: Laser process; stamping; saws; and or To cut. Method according to one of the preceding claims, wherein the casting layer ( 120 ) has a potting material. Method according to claim 10, wherein the casting layer ( 120 ) embedded in the potting material particles ( 125 ) from the following group: particles of a conversion material or different particles of different conversion materials for radiation conversion; scattering particles; reflective particles; and / or pigments of a given body color. Method according to one of the preceding claims, wherein the casting layer ( 120 ) is formed by performing a molding process, in particular a compression molding process.  The method of any one of the preceding claims, further comprising removing the substrate. Method according to one of the preceding claims, wherein on the substrate ( 130 . 140 . 131 ) formed layer arrangement a plurality of juxtaposed layer areas ( 111 ) at least one electrophoretically deposited layer ( 110 . 115 . 116 . 117 ), on which the casting layer ( 120 ), and wherein the structuring of the layer arrangement is carried out such that a plurality of layer elements ( 110 ), each of which has a layer region ( 111 ) of the at least one electrophoretically deposited layer ( 110 . 115 . 116 . 117 ) and a layer region formed by structuring ( 121 ) of the potting layer ( 120 ). Method for producing an optoelectronic component, wherein a layer element ( 100 . 101 ) is produced by performing a method according to one of the preceding claims and subsequently on at least one optoelectronic semiconductor chip ( 170 ) is arranged. Layer element, which on at least one optoelectronic semiconductor chip ( 170 ), comprising: an electrophoretically deposited layer ( 110 . 111 ); and one on the electrophoretically deposited layer ( 110 ) ( 120 . 121 ).

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