CN110265299A - A kind of reverse-conducting field cut-off type superjunction IGBT and preparation method thereof - Google Patents
A kind of reverse-conducting field cut-off type superjunction IGBT and preparation method thereof Download PDFInfo
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- CN110265299A CN110265299A CN201910412462.7A CN201910412462A CN110265299A CN 110265299 A CN110265299 A CN 110265299A CN 201910412462 A CN201910412462 A CN 201910412462A CN 110265299 A CN110265299 A CN 110265299A
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- 238000002360 preparation method Methods 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000725 suspension Substances 0.000 claims abstract description 12
- 239000002019 doping agent Substances 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000013049 sediment Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention provides a kind of reverse-conducting field cut-off type superjunction IGBT, and the second semiconductor material is injected in the first semiconductor substrate, form inverse guide structure therewith；Being cascading in the upper surface of the first semiconductor substrate has the second epitaxial growth of semiconductor material layer of suspension layer and low doping concentration；The first semiconductor material of same concentrations and the second semiconductor material are injected in second epitaxial growth of semiconductor material layer of the low doping concentration, first semiconductor material and the second semiconductor material are along the multiple formation super-junction structure of plane alternating where epitaxial layer.The present invention also provides the production methods of above-mentioned IGBT.Above-mentioned reverse-conducting field cut-off type superjunction IGBT and preparation method thereof is effectively reduced the saturation voltage drop of IGBT and obtains higher power density, and IGBT can be done thinner smaller is simultaneously being internally integrated reverse conduction diodes, and production cost is effectively reduced.
Description
Technical field
The present invention relates to transistor more particularly to insulated gate bipolar transistors.
Background technique
IGBT (insulated gate bipolar transistor) is by BJT (bipolar junction transistor triode) and (the insulated-gate type field MOS
Effect k pipe) composition compound full-control type-voltage driven type-power semiconductor, have concurrently MOSFET high input impedance and
Advantage of both the low conduction voltage drop of BJT.The DC such as alternating current generator, inverter, lighting circuit, Traction Drive 600V and with
On converter system in be used widely.
IGBT is substantially or a field effect transistor, very close with Power MOSFET from structure, just exists
The drain electrode at the back side increases one P+ layers.The PN junction for just forming forward bias in drain terminal in this way will not influence conducting and increase instead
Hole injection effect is added, just there are two types of carriers to participate in conduction by similar BJT for its characteristic.So original source electrode reforms into hair
Emitter-base bandgap grading, and drain and reform into collector.
The driving principle of IGBT and power MOSFET are essentially identical, and on-off is determined by grid emitter voltage Vge.IGBT silicon is connected
The structure of piece and the structure of power MOSFET are quite similar, and main difference is that IGBT increases the area P+ and a N+ buffer layer
(NPT- is non-, and break-through-IGBT technology does not increase this part), one of MOSFET drive two bipolar devices.Substrate is answered
A J1 knot is created between the area P+ and N+ of tube body.When positive gate bias make the base area inverting P below grid, a N ditch
Road is formed, while an electron stream occurs, and generate one electric current fully according to the mode of power MOSFET.If this electronics
Raw voltage miscarry within the scope of 0.7V, then, J1 will be in forward bias, and some holes are injected in the area N-, and adjust yin-yang
Resistivity between pole, this mode reduce the total losses of conducting power, and start second electric charge stream.Last result
It is temporarily to occur two different circuit topographies in semiconductor level: an electron stream (MOSFET electric current)；Hole current
(bipolar).When Vge is greater than cut-in voltage Vge (th), channel is formed in MOSFET, provides base current for transistor, IGBT is led
It is logical.
The saturation voltage drop of IGBT is larger on the market at present, power density is lower, needs one in parallel reversely to lead in application process
Logical diode.
Summary of the invention
The main technical problem to be solved by the present invention is to provide the production of reverse-conducting field cut-off type superjunction IGBT a kind of
Method and a kind of reverse-conducting field cut-off type superjunction IGBT, saturation voltage drop and the higher power of acquisition that IGBT is effectively reduced are close
Degree, IGBT can be done thinner smaller are simultaneously being internally integrated reverse conduction diodes, production cost are effectively reduced.
In order to solve the above technical problems, the present invention provides the systems of reverse-conducting field cut-off type superjunction IGBT a kind of
Make method, includes the following steps:
1) the second semiconductor material is injected by photoetching in the first semiconductor substrate and forms inverse guide structure；
2) field suspension layer is formed in the second semiconductor material that the upper surface of substrate grows one layer of high-dopant concentration；
3) the second semiconductor material that one layer of low doping concentration is grown on suspension layer on the scene, the second the half of low doping concentration
Upper surface photoetching injection the first semiconductor material of same dose of conductor material and the second semiconductor material, and be repeated as many times and formed
Superjunction；
4) emitter region, channel region and contact zone are made, and metal emitting is formed to contact zone deposit metal；
5) grinding back surface is to required thickness, and makes collecting zone, eventually forms back side alloy.
2. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 1 a kind of, feature exist
In: step 2 midfield suspension layer with a thickness of 3um-10um, concentration is 6E15CM-3 between 6E16CM-3.
3. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 1 a kind of, feature exist
In: the concentration of the second semiconductor material of low doping concentration described in step 3 is 1E14CM-3 between 2E14CM-3.
In a preferred embodiment: the dosage of same dose the first semiconductor material and the second semiconductor material in step 3
It is 1E12CM-2 between 2E13CM-2.
In a preferred embodiment: step 4 specifically includes following sub-step:
The second semiconductor material of one layer of low doping concentration, the production for subsequent MOS 4-1) are grown in superjunction；
Surface field oxidation, annealing and light 4-2) are carried out to the second semiconductor material for growing one layer of low doping concentration in superjunction
After etching is carved, the second semiconductor material of high-dopant concentration is injected；
Gate oxide 4-3) is grown, depositing polysilicon forms grid using gate lithography exposure mask；
Barrier layer 4-4) is done using polysilicon and field oxide, injects the first semiconductor-type material of high-dopant concentration simultaneously
Annealing pushes away the channel region that trap forms the first semiconductor type；
4-5) the pattern formed using photo etched mask injects the second semiconductor-type material of high-dopant concentration, is formed and is increased
Strong type the second semiconductor type emitter region；
Boron-phosphorosilicate glass 4-6) is deposited, oxidation insulating layer is formed, forms contact zone using mask plate Lithography Etching；It is contacting
Area deposits metal and forms metal emitting.
In a preferred embodiment: in step 4-1, the second semiconductor material of low doping concentration with a thickness of 3um-
10um。
In a preferred embodiment: in step 4-2, the dosage of the second semiconductor material of high-dopant concentration is 8E11CM-2
To between 7E12CM-2.
In a preferred embodiment: in step 4-4, the dosage of the first semiconductor-type material of high-dopant concentration is
1E13CM-2 is between 1E14CM-2；
In step 4-5, the dosage of the second semiconductor-type material of high-dopant concentration be 1E15CM-2 to 9E15CM-2 it
Between.
In a preferred embodiment: the specific practice of step 5 are as follows: grinding back surface to required thickness, then it is polished,
Cleaning, evaporation, alloy, form the collecting zone of the first semiconductor material of the back side and the collecting zone of the second semiconductor material.
The present invention also provides a kind of reverse-conducting field cut-off type superjunction IGBT, and is injected in the first semiconductor substrate
Two semiconductor materials form inverse guide structure therewith；
It is cascading and the second the half of a suspension layer and low doping concentration leads in the upper surface of the first semiconductor substrate
Body material epitaxial layers；
Be injected in second epitaxial growth of semiconductor material layer of the low doping concentration the first semiconductor material of same concentrations and
Second semiconductor material, first semiconductor material and the second semiconductor material are multiple along the plane alternating where epitaxial layer
Form super-junction structure.
The production method and a kind of reverse-conducting field cut-off type of above-mentioned a kind of reverse-conducting field cut-off type superjunction IGBT is super
Tie IGBT, the saturation voltage drop of IGBT is effectively reduced and obtains higher power density, IGBT can be done thinner smaller and
Reverse conduction diodes are internally integrated, production cost is effectively reduced.
Specific embodiment
Below in conjunction with specific embodiment, the present invention will be further described.
Insulated gate bipolar transistor is present embodiments provided, in the structure of insulated gate bipolar transistor, first
It is injected with the second semiconductor material in semiconductor substrate, forms inverse guide structure therewith；
It is cascading and the second the half of a suspension layer and low doping concentration leads in the upper surface of the first semiconductor substrate
Body material epitaxial layers；
Be injected in second epitaxial growth of semiconductor material layer of the low doping concentration the first semiconductor material of same concentrations and
Second semiconductor material, first semiconductor material and the second semiconductor material are multiple along the plane alternating where epitaxial layer
Form super-junction structure.The structure combination superjunction and inverse the advantages of leading, can be effectively reduced the saturation voltage drop of IGBT and obtain higher
Power density, while saving reverse conduction diodes in the application, production cost be effectively reduced.
The present embodiment additionally provides the production method of above-mentioned insulated gate bipolar transistor.Present embodiment is resistance to 600V
For voltage device.First semiconductor material selects P, and the second semiconductor material selects N.Wherein P+, N+ indicate high-dopant concentration,
P-, N- indicate low doping concentration, are divided into following steps:
N+ is injected in photoetching first on P+ substrate, and the parameter of photoetching injection is 150Kev, and the implantation dosage of N+ is 3E15CM-
2, so that P+ substrate and N+ form inverse guide structure.
Then in the N+ for up growing 9um thickness on P+ substrate, as field suspension layer.
Long one layer of very light N- forms N- epitaxial layer on suspension layer on the scene, and doping concentration is less than 1.5E14CM-3, at it
Photoetching implantation dosage is the P+ and N+ of 6E12CM-2 above, is repeated 5 times, ultimately forms the superjunction of 45um depth.P+'s and N+ all adopts
It is more stable in the superjunction performance of formation with the mode of injection.
Rise 9um thickness N- again in superjunction, the production for subsequent MOS.Subsequent production belongs to the prior art, this reality
Example is applied only to be briefly described:
To the N- of 9um thickness carry out surface field oxidation (with a thickness of 7500A), annealing (temperature: 1200 DEG C/time: 6H),
After Lithography Etching.High annealing is carried out after the N+ that comprehensive implantation dosage is 2E12CM-2, temperature is in 1000-1200C, time 5-
7h.Conducting is helped speed up in this way and reduces pressure drop.
The growth of gate oxide is carried out again, and depositing polysilicon etches to form grid using gate lithography.
Hereafter the P+ that comprehensive implantation dosage is 6E13CM-2 forms P+ channel region.Photoetching implantation dosage is the N of 5E15CM-2
+ form N+ emitter region.
In the boron-phosphorosilicate glass of the surface of emitter region growth 1.5um thickness, then carry out Lithography Etching, ion implanting and annealing shape
At contact zone, it is deposited metal lithographic and etches to form metal emitting and deposit passivation layer Lithography Etching formation passivation.
After completing positive technique, by grinding back surface to required thickness (60um-65um), it is being polished, is being cleaned, is being steamed
Hair, alloy form back metal, do collector.
The foregoing is only a preferred embodiment of the present invention, but the design concept of the present invention is not limited to this,
Anyone skilled in the art in the technical scope disclosed by the present invention, using this design carries out the present invention non-
Substantive change belongs to the behavior for invading the scope of the present invention.
Claims (10)
1. a kind of production method of reverse-conducting field cut-off type superjunction IGBT, it is characterised in that include the following steps:
1) the second semiconductor material is injected by photoetching in the first semiconductor substrate and forms inverse guide structure；
2) field suspension layer is formed in the second semiconductor material that the upper surface of substrate grows one layer of high-dopant concentration；
3) the second semiconductor material that one layer of low doping concentration is grown on suspension layer on the scene, in the second semiconductor of low doping concentration
Upper surface photoetching injection the first semiconductor material of same dose of material and the second semiconductor material, and be repeated as many times to be formed and surpass
Knot；
4) emitter region, channel region and contact zone are made, and metal emitting is formed to contact zone deposit metal；
5) grinding back surface is to required thickness, and makes collecting zone, eventually forms back side alloy.
2. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 1 a kind of, it is characterised in that: institute
State step 2 midfield suspension layer with a thickness of 3um-10um, concentration is 6E15CM-3 between 6E16CM-3.
3. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 1 a kind of, it is characterised in that: step
The concentration of second semiconductor material of low doping concentration described in rapid 3 is 1E14CM-3 between 2E14CM-3.
4. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 1 a kind of, it is characterised in that: step
The dosage of the first semiconductor material of same dose and the second semiconductor material is 1E12CM-2 between 2E13CM-2 in rapid 3.
5. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 1 a kind of, it is characterised in that: step
Rapid 4 specifically include following sub-step:
The second semiconductor material of one layer of low doping concentration, the production for subsequent MOS 4-1) are grown in superjunction；
Surface field oxidation, annealing and photoengraving 4-2) are carried out to the second semiconductor material for growing one layer of low doping concentration in superjunction
After quarter, the second semiconductor material of high-dopant concentration is injected；
Gate oxide 4-3) is grown, depositing polysilicon forms grid using gate lithography exposure mask；
Barrier layer 4-4) is done using polysilicon and field oxide, inject the first semiconductor-type material of high-dopant concentration and is annealed
Push away the channel region that trap forms the first semiconductor type；
4-5) the pattern formed using photo etched mask injects the second semiconductor-type material of high-dopant concentration, is formed enhanced
Second semiconductor type emitter region；
Boron-phosphorosilicate glass 4-6) is deposited, oxidation insulating layer is formed, forms contact zone using mask plate Lithography Etching；It forms sediment in contact zone
Product metal forms metal emitting.
6. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 5 a kind of, it is characterised in that: step
In rapid 4-1, the second semiconductor material of low doping concentration with a thickness of 3um-10um.
7. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 5 a kind of, it is characterised in that: step
In rapid 4-2, the dosage of the second semiconductor material of high-dopant concentration is 8E11CM-2 between 7E12CM-2.
8. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 5 a kind of, it is characterised in that: step
In rapid 4-4, the dosage of the first semiconductor-type material of high-dopant concentration is 1E13CM-2 between 1E14CM-2；
In step 4-5, the dosage of the second semiconductor-type material of high-dopant concentration is 1E15CM-2 between 9E15CM-2.
9. the production method of reverse-conducting field cut-off type superjunction IGBT according to claim 1 a kind of, it is characterised in that: step
Rapid 5 specific practice are as follows: grinding back surface to required thickness, then it is polished, is cleaned, is evaporated, alloy, form the back side first
The collecting zone of the collecting zone of semiconductor material and the second semiconductor material.
10. a kind of reverse-conducting field cut-off type superjunction IGBT, which is characterized in that be injected with the second half in the first semiconductor substrate
Conductor material forms inverse guide structure therewith；
Being cascading in the upper surface of the first semiconductor substrate has the second semiconductor material of suspension layer and low doping concentration
Expect epitaxial layer；
The first semiconductor material of same concentrations and second are injected in second epitaxial growth of semiconductor material layer of the low doping concentration
Semiconductor material, first semiconductor material and the second semiconductor material are alternately repeatedly formed along the plane where epitaxial layer
Super-junction structure.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219370A (en) * | 2013-03-11 | 2013-07-24 | 电子科技大学 | Reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with P floating layer current bolt |
| CN103378141A (en) * | 2012-04-25 | 2013-10-30 | 上海北车永电电子科技有限公司 | Insulated gate bipolar transistor and manufacturing method thereof |
| CN104620388A (en) * | 2013-01-16 | 2015-05-13 | 富士电机株式会社 | Semiconductor element |
| US20170047319A1 (en) * | 2014-10-24 | 2017-02-16 | Fuji Electric Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
| CN107768429A (en) * | 2017-10-27 | 2018-03-06 | 电子科技大学 | A kind of superjunction IGBT device with hybrid conductive pattern |
-
2019
- 2019-05-17 CN CN201910412462.7A patent/CN110265299A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103378141A (en) * | 2012-04-25 | 2013-10-30 | 上海北车永电电子科技有限公司 | Insulated gate bipolar transistor and manufacturing method thereof |
| CN104620388A (en) * | 2013-01-16 | 2015-05-13 | 富士电机株式会社 | Semiconductor element |
| US20150187930A1 (en) * | 2013-01-16 | 2015-07-02 | Fuji Electric Co., Ltd. | Semiconductor element |
| CN103219370A (en) * | 2013-03-11 | 2013-07-24 | 电子科技大学 | Reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with P floating layer current bolt |
| US20170047319A1 (en) * | 2014-10-24 | 2017-02-16 | Fuji Electric Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
| CN107768429A (en) * | 2017-10-27 | 2018-03-06 | 电子科技大学 | A kind of superjunction IGBT device with hybrid conductive pattern |
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Application publication date: 20190920 |