CN110246937A - Show equipment - Google Patents
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- CN110246937A CN110246937A CN201810791786.1A CN201810791786A CN110246937A CN 110246937 A CN110246937 A CN 110246937A CN 201810791786 A CN201810791786 A CN 201810791786A CN 110246937 A CN110246937 A CN 110246937A
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- layer
- luminescence unit
- conductive layer
- display equipment
- transport layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
Abstract
The present invention provides a kind of display equipment, comprising: a substrate；And a luminescence unit, it is set on substrate, and luminescence unit includes: a transport layer, there is semiconductor area；And a conductive layer, there is the contact zone contacted with semiconductor region；Wherein the distance between an edge of contact zone and an edge of transport layer are greater than or equal to 0.1 μm.
Description
Technical field
The present invention relates to a kind of display equipment and its manufacturing methods.
Background technique
There is the electronics of display panel to fill for smartphone, tablet computer, notebook computer, display and TV etc.
It sets and has become the indispensable necessity of modern society.With this kind of portable electronic product flourish, consumer for
Quality, function and price of this kind of product etc. have higher expectation.
Light emitting diode (LED) based on gallium nitride (GaN), which is expected, to be used in following efficient illumination application,
Replace incandescent lamp and fluorescent lamp.LED matrix based on GaN is usually by heteroepitaxial growth technology
(heteroepitaxial growth technique) on base material in being prepared.General wafer scale LED matrix knot
Structure may include the single quantum well (single quantum well, SQW) or multiple quantum trap being formed in sapphire substrates
The GaN layer of (multiple quantum well, MQW), n doping and the GaN layer of p doping.
In general, there is transparency conducting layer in larger-size light emitting diode (for example, size is greater than 200 μm) and set
It is placed in the design such as current barrier layer below transparency conducting layer, makes electric current that can relatively evenly diffuse to shining for light emitting diode
Area, luminous efficiency reduces caused by avoiding because of current-crowding effect (current crowding effect).However, for size
For lesser light emitting diode (for example, mini LED or micro LED), because the approach of electric current conduction is shorter, less have
The non-uniform problem of current spread, but electric current is easy to conduct via the sidewall edge of light emitting diode.In addition, due to light-emitting diodes
The side wall of pipe usually has more defect and dangling bond (dangling bond) to exist, and is easy to capture the electronics passed through, it is thus possible to lead
The generation of leakage current is caused, or causes the electric current for flowing through luminescent layer to reduce thus reduces luminous efficiency.
Therefore, the structure design for developing the luminous efficiency that can further improve display equipment, is that current industry is endeavoured
One of project.
Summary of the invention
According to some embodiments of the invention, a kind of display equipment is provided characterized by comprising a substrate；And one hair
Light unit is set on the substrate, and the luminescence unit includes: a transport layer, has semiconductor area；And a conductive layer,
With the contact zone contacted with the semiconductor region；Wherein between an edge of the contact zone and an edge of the transport layer away from
From more than or equal to 0.1 μm.
Detailed description of the invention
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates, in which:
Fig. 1 is shown according to some embodiments of the invention, shows the upper schematic diagram of equipment；
Fig. 2 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit；
Fig. 3 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit；
Fig. 4 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit；
Fig. 5 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit；
Fig. 6 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit；
Fig. 7 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit；
Fig. 8 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit；
Fig. 9 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit；
Figure 10 shows according to some embodiments of the invention, the schematic diagram of the section structure of luminescence unit.
Symbol description
10 display equipment；
100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I luminescence unit；
102 substrates；
202 transport layers；
The first semiconductor region of 202a；
The second semiconductor region of 202b；
202B bottom surface；
The high resistance regions 202d；
The edge 202E；
The side surface 202S；
204 quantum well layers；
The side surface 204S；
206 first conductive layers；
206a top surface；
206b bottom surface；
The contact zone 206C；
The edge 206E；
The second conductive layer of 208a；
208b third conductive layer；
208ba top surface；
210 reflecting layer；
The side surface 210S；
212 current barrier layers；
212B bottom surface；
The side surface 212S；
D1Distance；
S slit；
W1Width.
Specific embodiment
It elaborates below for the structure and its manufacturing method of display equipment of the invention.It is to be understood that following
Narration many different embodiments are provided, to implement the different patterns of some embodiments of the invention.It is as described below specific
Component and arrangement mode only simply clearly describe some embodiments of the invention.Certainly, these are only to illustrate and non-present invention
Restriction.Duplicate label or mark may be used in different embodiments.These repeat simply clearly to describe this
Some embodiments are invented, not representing has any association between the different embodiments and/or structure discussed.Furthermore when narration
One first material layer be set in a second material layer or on when, directly contacted including first material layer with second material layer
Situation.Alternatively, the situation of one or more other materials layers is also separated between possibility, and in this case, first material layer and the second material
It may be not directly contacted between the bed of material.
It should be understood that the component or device of attached drawing can exist with various forms well-known to those skilled in the art.This
Relativity term, such as " lower " or " bottom " or " higher " or " top " may be used in outer embodiment, to describe attached drawing
Relativeness of one component for another component.It will be appreciated that if making it turn upside down the device overturning of attached drawing,
The component described in " lower " side will be as the component in " higher " side.The embodiment of the present invention can cooperate attached drawing to manage together
Solution, attached drawing of the invention are also considered as a part of invention description.It should be understood that attached drawing of the invention is not necessarily made to scale and draws
System, in fact, the size of component may be zoomed in or out arbitrarily clearly to show feature of the invention, and in specification
And in attached drawing, same or like component will be indicated with similar symbol.
Although it will be appreciated that term " first ", " second ", " third " etc. can be used herein to describe various assemblies, group
At or part, these terms be only used to distinguish different components, composition or part, should not be defined.
Here, " about ", " about ", " substantial " term be generally represented in the 20% of a given value or range, preferably
It is in 10%, is more preferably in 5% or within 3% or within 2% or within 1% or within 0.5%.Given quantity herein
It is quantity about, that is, in the case where no certain illustrated " about ", " about ", " substantial ", can still implies " about ", " greatly
About ", the meaning of " substantial ".
Unless otherwise defined, whole terms (including technology and scientific words) as used herein have and skill belonging to the present invention
The normally understood identical connotation of the technical staff in art field.It is appreciated that, these terms are for example in usually used dictionary
Define term, should be interpreted to have with the relevant technologies and background of the invention or the consistent meaning of context, without Ying Yiyi
Idealization or excessively formal mode are interpreted, unless having special definition in the embodiment of the present invention.
In some embodiment of the invention, two otherwise be can refer to unless defined about engagement, the term being electrically connected
A structure is directly to contact, or be also referred to as two structures and non-direct contact, wherein there is other structures to be set to this two structures
Between.And this also may include that two structures are all removable or two structures are all fixed about engagement, the term being electrically connected
Situation.
According to some embodiments of the present invention, in the luminescence unit of display equipment, the edge of conductive layer and transport layer
There is a distance between edge, the probability that electric current flows through the sidewall edge of luminescence unit can be reduced, therefore generation leakage can be reduced
The risk of electric current improves the luminous efficiency of luminescence unit.According to some embodiments of the present invention, show that the luminescence unit of equipment can
With the current barrier layer for being set to side surface, the defect that can further avoid side surface captures electronics and causes leakage current, or
It can reduce and be contacted when showing equipment assembling with other conductive components and generate short-circuit risk.
Fig. 1 is shown according to some embodiments of the invention, shows the structure upper schematic diagram of equipment 10, also that is, display is set
Standby 10 correspond to the upper schematic diagram of the X-Y plane in diagram.As shown in Figure 1, display equipment 10 includes substrate 102 and is set to
Multiple luminescence unit 100A on substrate 102.In some embodiments, substrate 102 can be used as the drive substrate of display equipment 10.
Specifically, substrate 102 can further include driving circuit (not being painted), for example, the switch for controlling luminescence unit 100A.
Driving circuit can be active driving circuit or passive type driving circuit.For example, in some embodiments, driving circuit may include
Thin film transistor (TFT) (thin-film transistor, TFT).In further embodiments, driving circuit can be by external collection
It is controlled at circuit (IC) or microchip etc..In addition, Z-direction is essentially the normal side of substrate 102 according to some embodiments
To.
In some embodiments, substrate 102 may include glass, quartz, sapphire (sapphire), polycarbonate
(polycarbonate, PC), polyimides (polyimide, PI), polyethylene terephthalate (polyethylene
Terephthalate, PET), rubber, glass fibre, other suitable materials or combination above-mentioned, but not limited to this.In some realities
It applies in example, substrate 102 can be made of metal-glass fiber composite board, metal-ceramic composite plate or printed circuit board etc..
It should be understood that display equipment 10 can further include the wavelength conversion layer being set to above luminescence unit 100A,
The structures such as colored filter or light shield layer.The display equipment 10 with appropriate configuration can be optionally arranged in those skilled in the art.
Then, referring to figure 2., Fig. 2 is shown according to some embodiments of the invention, and the cross-section structure of luminescence unit 100A shows
It is intended to, also that is, luminescence unit 100A corresponds to the cross-sectional view of the structure of the X-Z plane in icon.In this embodiment, luminescence unit
100A is the luminescence unit of Vertical Structure (vertical type).As shown in Fig. 2, luminescence unit 100A includes transport layer
202, the quantum well layer 204 being set between transport layer and the first conductive layer 206 being set in transport layer 202.Transport layer
202 in luminescence unit 100A electronics or hole transmitted, and electronics and hole can in quantum well layer 204 in conjunction with and send out
Light.In addition, in some embodiments, luminescence unit 100A may include LED, miniature LED or Organic Light Emitting Diode (OLED).?
In some embodiments, the size (long x wide x high) of the luminescence unit 100A can be in 1 μm of 1 μ m of about 1 μ m to about 200 μ ms
The range or 1 μm to 150 μm of 150 μ m of about 150 μ m of 1 μ m of about 1 μ m of range of 200 200 μm of μ ms.More specifically,
In some embodiments, the size range of the tube core of the luminescence unit 100A can be about 1 μm of 1 μ m, 1 μ m to about 200 μ ms
200 200 μm of μ ms, or 1 μm to 150 μm of 150 μ m of about 150 μ m of 1 μ m of about 1 μ m.
Furthermore transport layer 202 may include the first semiconductor region 202a and the second semiconductor region 202b, the first semiconductor region
202a and the second semiconductor region 202b can be respectively configured to provide and transmit electronics and hole.In some embodiments, it the first half leads
Body area 202a and the second semiconductor region 202b by the semiconductor material with N-shaped conduction type and can have p-type electric-conducting class respectively
The semiconductor material of type is formed.However, in further embodiments, the first semiconductor region 202a and the second semiconductor region 202b can
It is formed respectively by the semiconductor material with p-type electric-conducting type and the semiconductor material with N-shaped conduction type.The N-shaped is led
The semiconductor material of electric type may include the gallium nitride (n-GaN) or aluminum phosphate indium (n-AlInP) for adulterating tetrad, the p
The semiconductor material of type conduction type may include the gallium nitride (p-GaN) or aluminum phosphate indium (p-AlInP) for adulterating bivalent.This
Outside, quantum well layer 204 may include single quantum well (single quantum well, SQW) or multiple quantum trap (multiple
Quantum well, MQW).In some embodiments, the material of quantum well layer 204 may include gallium nitride, aluminum phosphate indium
(AlInP), InGaN (InGaN) or combination above-mentioned, but not limited to this.
In some embodiments, the first semiconductor region 202a, the second semiconductor can be formed by epitaxial growth process
Area 202b and quantum well layer 204.The epitaxial growth process may include molecular beam epitaxy (molecular beam epitaxy,
MBE) processing procedure, liquid phase epitaxy (liquid phase epitaxy, LPE) processing procedure, solid phase epitaxial (solid phase epitaxy,
SPE) processing procedure, vapor phase epitaxial growth (vapor phase epitaxy, VPE) processing procedure, selective epitaxial growth (selective
Epitaxial growth, SEG) processing procedure, Metallo-Organic Chemical Vapor deposition (metal organic chemical vapor
Deposition, MOCVD) processing procedure, atomic layer chemical vapor deposition (atomic layer deposition, ALD) processing procedure or preceding
The combination stated.
Brought forward is stated, and the first conductive layer 206 is set in transport layer 202.In some embodiments, the first conductive layer 206 can
It is used to help the transport layer 202 of current spread to lower section.In some embodiments, the first conductive layer 206 has and the second half
The contact zone 206C of conductor region 202b contact.In some embodiments, the contact zone 206C also can be considered the first conductive layer 206
With the junctional area of the second semiconductor region 202b.Such as
Shown in Fig. 2, in some embodiments, between the edge 206E of contact zone 206C and the edge 202E of transport layer 202
D at a distance1.In other words, in some embodiments, the edge of the edge 202E of transport layer 202 and the first conductive layer 206
206E is not flushed.In some embodiments, on (that is, on X-Y plane) direction in the direction Yu ChuizhiZ, the side of contact zone 206C
The distance between the edge 202E of edge 206E and transport layer 202 (the second semiconductor region 202b) D1More than or equal to 0.1 μm.One
In a little embodiments, distance D1More than or equal to 0.5 μm.It should be understood that the first conductive layer 206 can have lesser size, only
Want electric current that can flow through the first conductive layer 206, therefore, according to different embodiments, distance D1Maximum value may not
Together.
In some embodiments, above-mentioned first conductive layer 206 can be formed by transparent conductive material.In some embodiments,
The transparent conductive material may include transparent conductive oxide (transparent conductive oxide, TCO).Citing and
Speech, transparent conductive oxide may include indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO),
It is indium gallium zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin (ATO), antimony oxide zinc (AZO), other suitable transparent
Conductive material or combination above-mentioned, but not limited to this.
In some embodiments, the first conduction can be formed by one or more deposition manufacture process, lithographic process and etch process
Layer 206.In some embodiments, deposition manufacture process may include chemical vapor deposition process, physical vapour deposition (PVD) processing procedure, plating system
Journey, electroless-plating processing procedure, other suitable processing procedures or combination above-mentioned.The chemical vapour deposition technique for example may include low pressure
Learn vapor deposition (low pressure chemical vapor deposition, LPCVD) processing procedure, low temperature chemical vapor deposition
(low temperature chemical vapor deposition, LTCVD) processing procedure, be rapidly heated chemical vapor deposition
(rapid thermal chemical vapor deposition, RTCVD) processing procedure, plasma-assisted chemical vapour deposition
(plasma enhanced chemical vapor deposition, PECVD) processing procedure, atomic layer deposition (atomic layer
Deposition, ALD) processing procedure etc..The physical vapour deposition (PVD) processing procedure for example may include sputter process, vapor deposition processing procedure, pulse swash
Light deposition etc..In addition, in some embodiments, the lithographic process may include light blockage coating (for example, rotary coating), soft baking
Roasting, baking, shielding alignment, exposure, postexposure bake, photoresist development, cleaning and drying etc. firmly.In some embodiments, above-mentioned
Etch process includes dry ecthing procedure, wet etching processing procedure or other suitable etch process.
Brought forward is stated, the edge 202E of the edge 206E of contact zone 206C and transport layer 202 (the second semiconductor region 202b) it
Between D at a distance1.In other words, compared to transport layer 202, first conductive layer 206 is inside contracted, by such knot
Electric current is directed to the second semiconductor region 202b being disposed below by contact zone 206C by structure, first conductive layer 206, is reduced
Electric current flows through the side wall of transport layer 202 and by the chance of the defect capture on side wall, therefore can reduce the risk of leakage current generation,
Improve the luminous efficiency of luminescence unit 100A.
In addition, in some embodiments, luminescence unit 100A, which can further include, is set to the second of 202 two sides of transport layer
Conductive layer 208a and third conductive layer 208b, and the second conductive layer 208a may be disposed on the first conductive layer 206.Second conductive layer
208a and third conductive layer 208b can be used as the electrode of luminescence unit 100A, can further be coupled with signal wire and driving circuit with
Control the switch of luminescence unit 100A.It should be understood that although the size of the second conductive layer 208a depicted in diagram is less than
First conductive layer 206, but in other embodiments, the second conductive layer 208a can have any appropriate size, similarly, the
Three conductive layer 208b can also have any appropriate size.
In some embodiments, the second conductive layer 208a and third conductive layer 208b can be formed by conductive metal material.Example
Such as, the conductive metal material may include copper (Cu), aluminium (Al), tungsten (W), titanium (Ti), golden (Au), platinum (Pt), nickel (Ni), copper conjunction
Gold, aluminium alloy, tungsten alloy, titanium alloy, billon, platinum alloy, nickel alloy, other suitable conductive materials or combination above-mentioned,
But not limited to this.
In some embodiments, the second conduction can be formed by one or more deposition manufacture process, lithographic process and etch process
Layer 208a and third conductive layer 208b.In some embodiments, deposition manufacture process may include chemical vapor deposition process above-mentioned, it is preceding
Physical vapour deposition (PVD) processing procedure, electroplating process, electroless-plating processing procedure, other suitable processing procedures or the combination above-mentioned stated.In addition,
In some embodiments, the lithographic process may include light blockage coating (for example, rotary coating), soft baking, hard baking, shielding pair
Together, exposure, postexposure bake, photoresist development, cleaning and drying etc..In some embodiments, the etch process includes dry corrosion
Scribe journey, wet etching processing procedure or other suitable etch process.
In addition, in some embodiments, luminescence unit 100A, which can further include, is set to transport layer 202 and third conduction
Reflecting layer 210 between layer 208b.Reflecting layer 210 can prevent light leakage, to increase the light extraction efficiency of luminescence unit 100A.?
In some embodiments, as shown in Fig. 2, the side surface 210S in reflecting layer 210 and the side surface 202S of transport layer 202 are substantially neat
It is flat.However, in further embodiments, the side surface 210S in reflecting layer 210 is not flushed with the side surface 202S of transport layer 202
(as shown in Figure 6).
Reflecting layer 210 can be formed by the material with reflection characteristic.In some embodiments, the material in reflecting layer 210 can
Include metal.For example, the material in reflecting layer 210 may include copper (Cu), aluminium (Al), indium (In), ruthenium (Ru), tin (Sn), gold
(Au), platinum (Pt), zinc (Zn), silver-colored (Ag), titanium (Ti), lead (Pb), nickel (Ni), chromium (Cr), magnesium (Mg), palladium (Pd), other suitable
Material or combination above-mentioned, but not limited to this.In another embodiment, the material in reflecting layer 210 also may include TiO2、SiO2
Or combinations thereof, or use SiO2、TiO2The combination of collocation metal material.
In some embodiments, reflecting layer can be formed by one or more deposition manufacture process, lithographic process and etch process
210.In some embodiments, the deposition manufacture process may include that chemical vapor deposition process above-mentioned, physical vapor above-mentioned are heavy
Product processing procedure, electroplating process, electroless-plating processing procedure, other suitable processing procedures or combination above-mentioned.The physical vapour deposition (PVD) processing procedure
It such as may include sputter process, resistance heating vapor deposition processing procedure, electron beam evaporation plating processing procedure, pulse laser deposition etc..In addition, some
In embodiment, the lithographic process may include light blockage coating (for example, rotary coating), soft baking, hard baking, shielding alignment, expose
Light, postexposure bake, photoresist development, cleaning and drying etc..In some embodiments, above-mentioned etch process is scribed comprising dry corrosion
Journey, wet etching processing procedure or other suitable etch process.It in some embodiments, also can be by printing process or ink-jet process
(ink jet printing, IJP) etc. forms reflecting layer 210.
In addition, according to some embodiments, can first by transport layer 202, the first conductive layer 206 and the second conductive layer 208a sequentially
It is formed on a temporary substrate (not being painted), then, temporary substrate can be removed, and sequentially form reflecting layer 210 and third is led
Electric layer 208b is in transport layer 202, to complete luminescence unit 100A.It, can be in moreover, it will be understood that according to some embodiments
It is described herein formed luminescence unit processing procedure carry out before, carry out in and/or carry out after additional operation is provided.In different implementation
In example, some stages can be substituted, exchange or delete.
Then, referring to figure 3., Fig. 3 is shown in other embodiments according to the present invention, the cross-section structure of luminescence unit 100B
Schematic diagram.It should be understood that will hereinafter be indicated with the same or similar component above or component with the same or similar label,
Its material, manufacturing method and function with it is described previously same or similar, so part will not be described in great detail below.
Luminescence unit 100B shown in Fig. 3 and aforementioned luminescence unit 100A shown in Fig. 2 are substantially similar, and difference is,
In this embodiment, transport layer 202 further includes high resistance regions 202d, and high resistance regions 202d is set to the second semiconductor region 202b's
It two sides and is contacted with the second semiconductor region 202b.In this embodiment, high resistance regions 202d and the first conductive layer 206 are in Z-direction
On be partly overlapped.In this embodiment, high resistance regions 202d is by the bottom surface 206b of the first conductive layer 206 towards quantum well layer
204 direction extends.For example, in some embodiments, the maximum distance that high resistance regions 202d extends towards quantum well layer 204
The height for the second semiconductor region 202b for being about 1/4 times to about 1 times, for example, about 1/2 times, 1/3 times, 2/3 times, 1/4 times or 3/4
The height of the second semiconductor region 202b again.In addition, in some embodiments, high resistance regions 202d is electrically insulated, therefore,
The nurse impedance difficult to understand (ohmic resistance) between the first conductive layer 206 and transport layer 202 can be increased, prevent electric current to extending out
It is dissipated to the side wall of transport layer 202 (the second semiconductor region 202b), therefore can avoid reducing the luminous efficiency of luminescence unit 100B.
In some embodiments, high resistance regions 202d may include GaN or AlInP, can be by divalent or the tetravalence of undoping
Element, or the doping by concentration much smaller than the second semiconductor region 202b, and form high resistance regions 202d.For example, high
The impedance of impedance area 202d can be five times or more or the second semiconductor region 202b of the impedance of the second semiconductor region 202b
Carrier mobility (mobility) is 5 times or more of the carrier mobility of high resistance regions 202d.In another embodiment, high impedance
Area 202d can adulterate aluminium element, as long as the impedance of high resistance regions 202d is higher than the second semiconductor region 202b, so that it may reduce electric current
The probability of the side wall of transport layer 202 (the second semiconductor region 202b) is spread outward to, therefore can avoid reducing luminescence unit 100B's
Luminous efficiency.
In this embodiment, the first conductive layer 206 also has the contact zone 206C contacted with the second semiconductor region 202b, and
Contact zone 206C is between the 202d of high resistance regions.Similarly, in this embodiment, the edge 206E of contact zone 206C and transmission
D at a distance between the edge 202E of layer 2021.In some embodiments, the edge 206E and transport layer of contact zone 206C
The distance between 202 edge 202E D1More than or equal to 0.1 μm.In some embodiments, distance D1More than or equal to 0.5 μm.
In addition, as shown in figure 3, in this embodiment, distance D1It is substantially of same size with high resistance regions 202d.
Then, referring to figure 4., Fig. 4 is shown in other embodiments according to the present invention, the cross-section structure of luminescence unit 100C
Schematic diagram.Luminescence unit 100C shown in Fig. 4 and aforementioned luminescence unit 100B shown in Fig. 3 are substantially similar, and difference is,
In this embodiment, high resistance regions 202d further extends to quantum well layer 204.Specifically, high resistance regions 202d is by first
The bottom surface 206b of conductive layer 206 extends towards the direction of quantum well layer 204, and high resistance regions 202d is high in the maximum on the direction z
Degree is greater than the maximum height of the second semiconductor region 202.In this embodiment, high resistance regions 202d simultaneously with the first conductive layer 206,
Second semiconductor region 202b and quantum well layer 204 contact.Furthermore in this embodiment, high resistance regions 202d and the first conductive layer
206 and quantum well layer 204 in being partly overlapped in Z-direction.In some embodiments, the part of the surface and amount of high resistance regions 202d
Sub- well layer 204 contacts.Brought forward is stated, and high resistance regions 202d is electrically insulated, and therefore, electric current will not be by the side of transport layer 202
Wall transmission can improve luminescence unit conversely, most electric current is transmitted from the position corresponding to contact zone 206C whereby
The luminous efficiency of 100C.
Then, referring to figure 5., Fig. 5 is shown in other embodiments according to the present invention, the cross-section structure of luminescence unit 100D
Schematic diagram.Luminescence unit 100D shown in fig. 5 and aforementioned luminescence unit 100A shown in Fig. 2 are substantially similar, and difference is,
In this embodiment, luminescence unit 100D further includes current barrier layer 212, and the current barrier layer 212 covers the side of transport layer 202
Surface 202S.The side surface 202S of the transport layer 202 also can be considered the side surface of the first semiconductor region 202a or the second half lead
The side surface of body area 202b.Current barrier layer 212 can reduce the probability that electric current flows through the side wall of transport layer 202, reduce leakage current
Generation.In some embodiments, current barrier layer 212 also covers the side surface 204S of quantum well layer 204.In addition, some
In embodiment, the first conductive layer 206 is located between current barrier layer 212.In some embodiments, current barrier layer 212 with
Transport layer 202 in Z-direction in being partly overlapped.
In addition, in some embodiments, the bottom surface 212B and (the first semiconductor region of transport layer 202 of current barrier layer 212
Bottom surface 202B 202a) is substantially flushed.On the other hand, as shown in figure 5, in some embodiments, the side table in reflecting layer 210
Face 210S is substantially flushed with the side surface 202S of transport layer 202.
As shown in figure 5, the first conductive layer 206 also has the contact zone 206C contacted with the second semiconductor region 202b.It is similar
Ground on (that is, on X-Y plane) direction in the direction Yu Chuizhi z, the edge 206E of contact zone 206C and passes in this embodiment
Also D at a distance between the edge 202E of defeated layer 2021.In some embodiments, the edge 206E of contact zone 206C and biography
The distance between the edge 202E of defeated layer 202 D1More than or equal to 0.1 μm.In some embodiments, distance D1It is greater than or equal to
0.5μm。
Furthermore the current barrier layer 212 can be formed by insulating materials.In some embodiments, the insulating materials can
Include silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), aluminium oxide (Al2O3), titanium dioxide (TiO2) other
Suitable material or combination above-mentioned, but not limited to this.It in some embodiments, can be by one or more deposition manufacture process, photoetching
Processing procedure and etch process form current barrier layer 212.In some embodiments, the deposition manufacture process may include chemical gas above-mentioned
Phase deposition manufacture process, physical vapour deposition (PVD) processing procedure above-mentioned, electroplating process, electroless-plating processing procedure, other suitable processing procedures or aforementioned
Combination.In addition, in some embodiments, the lithographic process may include light blockage coating (for example, rotary coating), soft baking,
Baking, shielding alignment, exposure, postexposure bake, photoresist development, cleaning and drying etc. firmly.In some embodiments, above-mentioned etching
Processing procedure includes dry ecthing procedure, wet etching processing procedure or other suitable etch process.According to some embodiments, can be transmitted being formed
The 202, first conductive layer 206 of layer and the second conductive layer 208a form current barrier layer 212 after on temporary substrate, then, then
Temporary substrate is removed, and sequentially forms reflecting layer 210 and third conductive layer 208b.
In addition, in some embodiments, when luminescence unit 100D the second conductive layer 208a or third conductive layer 208b with
When other conductive components (for example, signal wire) are electrically connected, current barrier layer 212 can also prevent other conductive components and transport layer
202 contact and cause the risk of short circuit.
Then, Fig. 6 is please referred to, Fig. 6 is shown in other embodiments according to the present invention, the cross-section structure of luminescence unit 100E
Schematic diagram.Luminescence unit 100E shown in fig. 6 and aforementioned luminescence unit 100D shown in fig. 5 are substantially similar, and difference is,
In this embodiment, luminescence unit 100E further includes the reflecting layer 210 of covering current barrier layer 212.It is covered in current blocking
Reflecting layer 210 on layer 212 can increase the positive amount of light of luminescence unit 100E and reduce lateral amount of light, therefore can reduce string
Sound (crosstalk) interference, promotes the luminous efficiency of luminescence unit 100E.
As aforementioned, reflecting layer 210 can be formed by the material with reflection characteristic.In some embodiments, reflecting layer 210
Material may include metal.For example, the material in reflecting layer 210 may include copper (Cu), aluminium (Al), indium (In), ruthenium (Ru), tin
(Sn), golden (Au), platinum (Pt), zinc (Zn), silver-colored (Ag), titanium (Ti), lead (Pb), nickel (Ni), chromium (Cr), magnesium (Mg), palladium (Pd), its
Its suitable material or combination above-mentioned, but not limited to this.In another embodiment, the material in reflecting layer 210 also may include
TiO2、SiO2Or combinations thereof, or use SiO2、TiO2The combination of collocation metal material.In another embodiment, reflecting layer 210
The side wall of current barrier layer 212 can be only covered, the present invention is not intended to limit the opposite position in reflecting layer 210 Yu current barrier layer 212
It sets, as long as reflecting layer 210 can increase the positive amount of light of luminescence unit 100E and reduce lateral amount of light.
Then, Fig. 7 is please referred to, Fig. 7 is shown in other embodiments according to the present invention, the cross-section structure of luminescence unit 100F
Schematic diagram.Luminescence unit 100F shown in Fig. 7 and aforementioned luminescence unit 100D shown in fig. 5 are substantially similar, and difference is,
In this embodiment, the first conductive layer 206 is with current barrier layer 212 at least partly be overlapped in Z-direction.As shown in fig. 7, in hair
In light unit 100E, a part of current barrier layer 212 is set between the first conductive layer 206 and the second semiconductor region 202b.
In other words, the first a part of conductive layer 206 is covered on current barrier layer 212.In addition, in some embodiments, such as Fig. 7 institute
Show, the side surface 210S in reflecting layer 210 can be flushed with the side surface 212S of current barrier layer 212 or not flushed.
In this embodiment, transport layer 202 can formed after on temporary substrate, is being initially formed current barrier layer 212 and covers
The transport layer 202 of cover re-forms the first conductive layer 206 in transport layer 202 and partial current barrier layer 212, and shape
At the second conductive layer 208a on the first conductive layer 206, then, then temporary substrate removed, and sequentially form reflecting layer 210 and
Third conductive layer 208b.
Then, Fig. 8 is please referred to, Fig. 8 is shown in other embodiments according to the present invention, the cross-section structure of luminescence unit 100G
Schematic diagram.Luminescence unit 100G shown in Fig. 8 and aforementioned luminescence unit 100D shown in fig. 5 are substantially similar, and difference is, hair
The first conductive layer 206 of light unit 100G further includes multiple slit S (slit).Slit S can be by the top of the first conductive layer 206
Surface 206a extends to the bottom surface 206b of the first conductive layer 206.Slit S can increase the amount of light of luminescence unit 100F.One
In a little embodiments, the first conductive layer 206 can have other patterns, make to increase by the light of the first conductive layer 206.In some implementations
In example, the width W of slit S1May range from about 0.001 μm to about 50 μm, or be about 1 μm to about 25 μm.Illustrate, Yu Ben
In embodiment, slit is not limited to slender type, is also possible to round, ellipse or the shape with arc angle.
In this embodiment, the first conductive layer 206 also has the contact zone 206C contacted with the second semiconductor region 202b.This
Outside, on (that is, on X-Y plane) direction in the direction Yu Chuizhi z, in this embodiment, contact zone 206 at outermost edge
Between 206E (that is, contact zone 206C is near edge of the edge 202E of transport layer 202) and the edge 202E of transport layer 202 also
D at a distance1.In some embodiments, between the edge 206E of contact zone 206C and the edge 202E of transport layer 202
Distance D1More than or equal to 0.1 μm.In some embodiments, distance D1More than or equal to 0.5 μm.
In some embodiments, slit S can be formed by patterning process in the first conductive layer 206.In some implementations
In example, the patterning process may include lithographic process and etch process.Lithographic process may include light blockage coating (for example, rotation
Coating), soft baking, hard baking, shielding alignment, exposure, postexposure bake, photoresist development, clean and drying etc..Etch process can
Include dry ecthing procedure or wet etching processing procedure.
Then, Fig. 9 is please referred to, Fig. 9 is shown in other embodiments according to the present invention, the cross-section structure of luminescence unit 100H
Schematic diagram.In this embodiment, luminescence unit 100H is the luminescence unit of crystal covering type structure (flip-chip type).Such as Fig. 9
Shown, luminescence unit 100H includes transport layer 202 (the first semiconductor region 202a and the second semiconductor region 202b), is set to transmission
Quantum well layer 204 between layer 202 and the first conductive layer 206 for being set in transport layer 202.In addition, luminescence unit 100H
It is led comprising the second conductive layer 208a being set on the first conductive layer 206 and the third being set on the first semiconductor region 202a
Electric layer 208b.In this embodiment, the second conductive layer 208a and third conductive layer 208b is set to the same side of transport layer 202.
Similarly, in this embodiment, the first conductive layer 206 also has the contact zone contacted with the second transport layer 202
D at a distance between the edge 206E of 206C, contact zone 206C and the edge 202E of transport layer 2021.In some embodiments
In, on the direction in the direction Yu ChuizhiZ (that is, on X-Y plane), the edge 206E of contact zone 206C and the edge of transport layer 202
The distance between 202E D1More than or equal to 0.1 μm.In some embodiments, distance D1More than or equal to 0.5 μm.Compared to biography
Defeated layer 202, first conductive layer 206 inside contracts, and by such structure, first conductive layer 206 is by contact zone 206C
Electric current is directed to the second semiconductor region 202b being disposed below, reduce electric current flow through the side surface of transport layer 202 and by side
The chance that defect on surface captures, therefore the risk of leakage current generation can be reduced, improve the luminous efficiency of luminescence unit 100H.
Then, Figure 10 is please referred to, Figure 10 is shown in other embodiments according to the present invention, the section knot of luminescence unit 100I
Structure schematic diagram.Luminescence unit 100I shown in Fig. 10 and aforementioned luminescence unit 100H shown in Fig. 9 are substantially similar, and difference exists
In in this embodiment, luminescence unit 100I further includes current barrier layer 212 and covers the reflecting layer of current barrier layer 212
210, and the current barrier layer 212 covers the side surface 202S of transport layer 202.In some embodiments, the one of reflecting layer 210
Partial top surface 210a is substantially flushed with the top surface 206a of a part of the first conductive layer 206.In some embodiments,
The top surface 210a of a part in reflecting layer 210 is substantially flushed with the top surface 208ba of third conductive layer 208b.In some realities
It applies in example, portion of electrical current barrier layer 212 is located at (not shown) on the first conductive layer 206.In addition, being covered in electric current as aforementioned
Reflecting layer 210 on barrier layer 212 can increase the positive amount of light of luminescence unit 100I and reduce lateral amount of light, therefore can subtract
Few cross-talk, promotes the luminous efficiency of luminescence unit 100I.
In conclusion according to some embodiments of the present invention, in the luminescence unit of display equipment, the edge of conductive layer with
There is a distance between the edge of transport layer, the probability that electric current flows through the sidewall edge of luminescence unit can be reduced, therefore can drop
The risk of the raw leakage current of low yield, improves the luminous efficiency of luminescence unit.According to some embodiments of the present invention, the hair of equipment is shown
Light unit has the current barrier layer for being set to side surface portion, can increase the nurse impedance difficult to understand between conductive layer and transport layer
(ohmic resistance) prevents electric current from spreading outward to the sidewall edge of transport layer, therefore can further avoid leakage current
Generation, or can reduce and be contacted when showing equipment assembling with other conductive components and generate short-circuit risk.
Although the embodiment of the present invention and its advantage have been invented as above, it will be appreciated that any those skilled in the art
Member, without departing from the spirit and scope of the present invention, when can change, substitute with retouch.In addition, protection scope of the present invention is simultaneously
It is not limited to processing procedure, machine, manufacture, material composition, device, method and step in specification in the specific embodiment, is appointed
What those skilled in the art can understand existing or following the developed processing procedure, machine, manufacture, object from disclosure of the present invention
Matter composition, device, method and step, as long as more or less the same function can be implemented in the embodiment here or obtain on the whole phase
It all can be used according to the invention with result.Therefore, protection scope of the present invention includes above-mentioned processing procedure, machine, manufacture, substance group
At, device, method and step.In addition, each claim constitutes an other embodiment, and protection scope of the present invention also includes
The combination of each claim and embodiment.Protection scope of the present invention is subject to view appended claims institute defender.
Claims (11)
1. a kind of display equipment characterized by comprising
One substrate；And
One luminescence unit is set on the substrate, and the luminescence unit includes:
One transport layer has semiconductor area；And
One conductive layer has the contact zone contacted with the semiconductor region；
Wherein the distance between an edge of the contact zone and an edge of the transport layer are greater than or equal to 0.1 μm.
2. display equipment as described in claim 1, which is characterized in that wherein the transport layer further includes a high resistance regions, the height
Impedance area is contacted with the semiconductor region.
3. display equipment as claimed in claim 2, which is characterized in that wherein the high resistance regions are electrically insulated.
4. display equipment as claimed in claim 2, which is characterized in that wherein the resistance value of the high resistance regions is the semiconductor region
5 times or more of resistance value.
5. display equipment as described in claim 1, which is characterized in that wherein the luminescence unit further includes a current barrier layer,
The current barrier layer covers a side surface of the transport layer.
6. display equipment as claimed in claim 5, which is characterized in that wherein the current barrier layer and the transport layer are in the substrate
A normal direction on be at least partly overlapped.
7. display equipment as claimed in claim 6, which is characterized in that wherein the conductive layer and the current barrier layer are in the normal
It is at least partly overlapped on direction.
8. display equipment as claimed in claim 5, which is characterized in that wherein a bottom surface of the current barrier layer and the transmission
One bottom surface of layer flushes.
9. display equipment as described in claim 1, which is characterized in that wherein the conductive layer includes multiple slits (slit).
10. display equipment as described in claim 1, which is characterized in that wherein the luminescence unit includes Vertical Structure or covers
The luminescence unit of brilliant formula structure.
11. display equipment as claimed in claim 5, which is characterized in that further include a reflecting layer and cover the current barrier layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/252,917 US11011677B2 (en) | 2018-03-09 | 2019-01-21 | Display device |
| KR1020190021908A KR20190106701A (en) | 2018-03-09 | 2019-02-25 | Display device |
| EP19161405.6A EP3537487A1 (en) | 2018-03-09 | 2019-03-07 | Display device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862640675P | 2018-03-09 | 2018-03-09 | |
| US62/640,675 | 2018-03-09 | ||
| US201862641972P | 2018-03-12 | 2018-03-12 | |
| US62/641,972 | 2018-03-12 |
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| CN110246937A true CN110246937A (en) | 2019-09-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810791786.1A Pending CN110246937A (en) | 2018-03-09 | 2018-07-18 | Show equipment |
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| KR (1) | KR20190106701A (en) |
| CN (1) | CN110246937A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047984A (en) * | 2019-04-10 | 2019-07-23 | 深圳市华星光电半导体显示技术有限公司 | Micro LED component and display panel |
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| CN101820039A (en) * | 2009-02-25 | 2010-09-01 | 晶发光电股份有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| US20120032212A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of light emitting diode sidewall passivation |
| CN104409584A (en) * | 2014-11-28 | 2015-03-11 | 杭州士兰明芯科技有限公司 | LED structure and manufacturing method thereof |
| US20150349200A1 (en) * | 2014-05-30 | 2015-12-03 | Mikro Mesa Technology Co., Ltd. | Micro-light-emitting diode |
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| CN101154677A (en) * | 2006-09-27 | 2008-04-02 | 群康科技(深圳)有限公司 | Active matrix type organic electro luminescence display and its manufacturing method |
| CN101820039A (en) * | 2009-02-25 | 2010-09-01 | 晶发光电股份有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| US20120032212A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of light emitting diode sidewall passivation |
| US20150349200A1 (en) * | 2014-05-30 | 2015-12-03 | Mikro Mesa Technology Co., Ltd. | Micro-light-emitting diode |
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| CN110047984A (en) * | 2019-04-10 | 2019-07-23 | 深圳市华星光电半导体显示技术有限公司 | Micro LED component and display panel |
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