CN102237460B - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
CN102237460B
CN102237460B CN201110053978.0A CN201110053978A CN102237460B CN 102237460 B CN102237460 B CN 102237460B CN 201110053978 A CN201110053978 A CN 201110053978A CN 102237460 B CN102237460 B CN 102237460B
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layer
ray structure
electrode
semiconductor layer
luminescent device
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CN102237460A (en
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丁焕熙
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Suzhou Lekin Semiconductor Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00—Combination of light sources
    • F21Y2113/10—Combination of light sources of different colours
    • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.

Description

Luminescent device
This application claims the priority of the korean patent application No.10-2010-0037945 that on April 23rd, 2010 submits to, its content by reference entirety is herein incorporated.
Technical field
The present invention relates to a kind of luminescent device.
Background technology
Light-emitting diode (LED) is a kind of semiconductor device converting electrical energy into light.Compared with traditional light source of such as fluorescent lamp or glow lamp, LED is favourable in power consumption, life-span, response speed, safety and environmental requirement.Consider this, carry out various research so that traditional light source is replaced with LED.LED is used as the light source of the lighting device of such as various lamp, liquid crystal display, electronic mark board and street lamp more and more.
Summary of the invention
Embodiment provides the luminescent device with novel structure.
Embodiment provides the luminescent device that can improve reliability.
Luminescent device according to embodiment can comprise: ray structure, and this ray structure comprises the first semiconductor layer, active layer and the second semiconductor layer; The first electrode on ray structure; And the protective layer comprising the first metal material in the outer peripheral areas of in ray structure and the first electrode.
Luminescent device according to embodiment can comprise: electrode, and this electrode comprises the supporting member with conductivity; Adhesion layer on electrode; The protective layer comprising multiple layers in the outer peripheral areas of the top surface of electrode; And the ray structure comprising the first semiconductor layer, active layer and the second semiconductor layer on electrode and protective layer; wherein said multiple layer comprises the third layer of the ground floor of contact adhesion layer, the second layer on the first layer and contact the first semiconductor layer; first and third layer comprise the first metal material, and the second layer comprises at least one that select from the group be made up of insulating material, electric conducting material and the second metal material.
Embodiment
In describing the embodiments of the present, will be understood that, when layer (or film), region, pattern or structure be called as another substrate, another layer (or film), another region, another pad or another pattern " on " or D score time, it can " directly " or " indirectly " on another substrate, layer (or film), region, pad or pattern, or also can there is one or more intermediate layer.Such position of layer has been described with reference to the drawings.
Hereinafter, embodiment will be described with reference to the drawings.For purpose of facilitating or clear, the thickness of every layer shown in accompanying drawing and size can be exaggerated, omitted or schematically drawn.In addition, the size of element does not reflect full-size(d) completely.
Fig. 1 is the side cross-sectional view of the luminescent device 100 illustrated according to the first embodiment.
With reference to figure 1, the luminescent device 100 according to embodiment comprises: the first electrode 175; Adhesion layer 170 on the first electrode 175; Reflector 160 on adhesion layer 170; Ohmic contact layer 150 on reflector 160; Protective layer 140 in the outer peripheral areas of the top surface of adhesion layer 170; Ray structure 135, this ray structure 135 is formed on ohmic contact layer 150 and protective layer 140 to produce light; And the second electrode 115 on ray structure 135.
First electrode 175 supports multiple layer of being formed thereon and has the function of electrode.In detail, the first electrode 175 can comprise the supporting member with conductivity.Electric power is provided to ray structure by the first electrode 175 together with the second electrode 115.
Such as, the first electrode 175 can comprise at least one that select from the group be made up of Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W and the carrier wafer that comprises Si, Ge, GaAs, ZnO, SiC or SiGe.
The thickness of the first electrode 175 can depend on the design of luminescent device 100 and change.Such as, the first electrode 175 has the thickness of about 30 μm to about 500 μm.
First electrode 175 can be plated and/or be deposited on ray structure 135 below or can adhere to the form of sheet, but embodiment is not limited thereto.
Adhesion layer 170 can be formed on the first electrode 175.Adhesion layer 170 is formed in the binder course below reflector 160 and protective layer 140.The outer surface of adhesion layer 170 be exposed and the end of adhesion layer 170 contact reflex layer 160, ohmic contact layer 150 and protective layer 140 to be used as the middleware of bond strength in reinforcement first electrode 175 and protective layer 140, ohmic contact layer 150 and reflector 160.
Adhesion layer 170 can comprise barrier metal or in conjunction with metal.Such as, adhesion layer 170 can comprise at least one that select from the group be made up of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta.
Reflector 160 can be formed on adhesion layer 170.Reflector 160 is reflected from the light of ray structure 135 incidence to improve light extraction efficiency.
Such as, reflector 160 can comprise metal or metal alloy, and it comprises at least one that select from the group be made up of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf, but embodiment is not limited thereto.In addition, reflector 160 can be prepared as multilayer by using above-mentioned metal and comprising the transparent conductive material of selected from the group be made up of IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga-ZnO), IGZO (In-Ga-ZnO), IZTO (indium zinc tin oxide), IAZO (indium aluminium zinc oxide), IGTO (indium gallium tin-oxide) and ATO (aluminium tin-oxide).Such as, reflector 160 has the sandwich construction comprising IZO/Ni, AZO/Ag, IZO/Ag/Ni or AZO/Ag/Ni.
Ohmic contact layer 150 can be formed on reflector 160.Ohmic contact layer 150 ohmic contact first conductive semiconductor layer 130 is to be easily provided to ray structure 135 by electric power.
In detail, ohmic contact layer 150 optionally comprises transparent conductive material and metal.Such as, by use select from the group be made up of ITO (indium tin oxide), IZO (indium-zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminium tin-oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin-oxide), AZO (aluminium zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx/ITO, Ni, Ag, Ni/IrOx/Au and Ni/IrOx/Au/ITO at least one, ohmic contact layer 150 can be prepared as individual layer or multilayer.
The contacting end portions adhesion layer 170 of ohmic contact layer 150.First conductive semiconductor layer 130 of whole surface contact except the region of overlapping protection layer 140 of ohmic contact layer 150.Because ohmic contact layer 150 can contact the first conductive semiconductor layer 130 as broadly as possible, so uniform current can be provided to active layer 120 by the whole surface of the first conductive semiconductor layer 130 of contact ohmic contact layer 150, make it possible to improve luminous efficiency significantly.
Ohmic contact layer 150 is equipped with the current barrier layer 145 of contact first conductive semiconductor layer 130 wherein.Current barrier layer 145 can partly overlapping second electrode 115 in vertical direction.Current barrier layer 145 stops the electric current being provided to the first conductive semiconductor layer 130 by ohmic contact layer 150.Therefore, the electric current being provided to the first conductive semiconductor layer 130 can be blocked in the outer peripheral areas place of current barrier layer 145 and current barrier layer.Therefore, current barrier layer 145 can flow through shortest path between the first and second electrodes 175 and 115 by Limited Current, makes electric current be bypassed to region between ohmic contact layer 150 and the first conductive semiconductor layer 130 except current barrier layer 145.Therefore, electric current equably on the whole region of the first conductive semiconductor layer 130, thus can improve luminous efficiency significantly.
Although can the shortest path flow of Limited Current between the first and second electrodes 175 and 115, the electric current being through the outer peripheral areas of current barrier layer 145 can flow to first conductive semiconductor layer 130 adjacent with current barrier layer 145 by the shortest path between the first and second electrodes 175 and 115.Therefore, the magnitude of current flowing through the shortest path between the first and second electrodes 175 and 115 can be similar with the magnitude of current being flow to the first conductive semiconductor layer 130 by the current path except shortest path.
Current barrier layer 145 can comprise the material of the conductivity of the conductivity had lower than ohmic contact layer 150, and has the material forming the electrical insulating property of Schottky contacts with the first conductive semiconductor layer 130.Such as, current barrier layer 145 can comprise from by ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2, SiO x, SiO xn y, Si 3n 4, Al 2o 3, TiO x, Ti, Al and Cr composition group in select at least one.
Meanwhile, current barrier layer 145 can be formed between ohmic contact layer 150 and the first conductive semiconductor layer 130 or between reflector 160 and ohmic contact layer 150, but embodiment is not limited thereto.
In addition, current barrier layer 145 can be formed in the groove be formed in ohmic contact layer 150, can give prominence to or can be formed in the hole formed by ohmic contact layer 150 from ohmic contact layer 150, but embodiment is not limited thereto.
Protective layer 140 can be formed in the outer peripheral areas place of the top surface of adhesion layer 170.That is, protective layer 140 is formed in the outer peripheral areas place between ray structure 135 and adhesion layer 170.
The overlapping ray structure 135 in vertical direction at least partially of protective layer 140.Because protective layer 140 can contact ray structure 135, therefore, it is possible to effectively prevent ray structure 135 from adhesion layer 170 layering.
Protective layer 140 can comprise the metal material with excellent adhesion property.Such as, protective layer 140 can comprise at least one that select from the group be made up of Ti, Ni, Au, Ag, Ta, Pt, Pd, Rh, Ir and W.Under these circumstances, protective layer 140 can strengthen the adhesion strength between ray structure 135 and adhesion layer 175, makes it possible to the reliability improving luminescent device 100.In addition; when execution laser scribe process or laser lift-off (LLO) technique are to be independent chip unit by multiple chip fracture; protective layer 140 can not be broken or can not produce the fragment of protective layer 140, makes it possible to the reliability providing luminescent device 100.In addition, if protective layer 140 ohmic contact first conductive semiconductor layer 130, electric current can flow through protective layer 140.Under these circumstances, the active layer 120 of overlapping protection layer 140 can produce light in vertical direction, thus can improve the luminous efficiency of luminescent device 100 further.Such as, if the first conductive semiconductor layer 130 is p-type semiconductor layer, so protective layer 140 can comprise the metal material that can form such as Ti, Ni or W of ohmic contact with p-type semiconductor layer, but embodiment is not limited thereto.
Ray structure 135 can be formed between ohmic contact layer 150 and protective layer 140.
The side of ray structure 135 vertically or can be formed obliquely with the isolation by chip fracture being independent chip unit etching by being performed.The top surface of protective layer 140 partly can be exposed by isolation etching.
Ray structure 135 can comprise multiple Group III-V compound semiconductor material.
Ray structure 135 can comprise the first conductive semiconductor layer 130, the active layer 120 in the first conductive semiconductor layer 130 and the second conductive semiconductor layer 110 on active layer 120.
In the part that first conductive semiconductor layer 130 can be formed in protective layer 140 and on ohmic contact layer 150 and current barrier layer 145.First conductive semiconductor layer 130 can be the p-type semiconductor layer comprising p-type alloy.P-type semiconductor layer can comprise the Group III-V compound semiconductor material selected from the group be made up of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP.P-type alloy can comprise Mg, Zn, Ga, Sr or Ba.First conductive semiconductor layer 130 can be prepared as individual layer or multilayer, but embodiment is not limited thereto.
Multiple charge carrier is provided to active layer 120 by the first conductive semiconductor layer 130.
Active layer 120 can comprise single quantum well, Multiple Quantum Well (MQW) structure, quantum wire structure and quantum-dot structure, but embodiment is not limited thereto.
Active layer 120 can have the stacked structure of the trap/barrier layer by using Group III-V compound semiconductor material.Group III-V compound semiconductor material for active layer can comprise GaN, InGaN or AlGaN.Therefore, such as, active layer can be prepared as the stacked structure of InGaN trap/GaN barrier layer, InGaN trap/AlGaN potential barrier or InGaN trap/InGaN barrier layer, but embodiment is not limited thereto.
Active layer 120 is by via the first conductive semiconductor layer 130 injected holes with via the composed emission of the second conductive semiconductor layer 110 injected electrons light corresponding with the band gap determined according to the semi-conducting material of active layer 120.
Although not shown in the accompanying drawings, conductive coating can be formed in face above and/or under active layer 120.Conductive coating can comprise AlGaN base semiconductor.Such as, the p-type coating layer comprising p-type alloy can be formed between the first conductive semiconductor layer 130 and active layer 120, and the N-shaped coating layer comprising N-shaped alloy can be formed between the second conductive semiconductor layer 110 and active layer 120.
Conductive coating is used as the electronics that prevents from being injected with active layer 120 and the hole migration guiding to the first and second conductive semiconductor layer 130 and 110.Therefore, because coating layer makes more substantial hole and electronics compound in active layer 120, thus the luminous efficiency of luminescent device 100 can be improved.
Second conductive semiconductor layer 110 can be formed on active layer 120.Second conductive semiconductor layer 110 can be the n-type semiconductor layer comprising N-shaped alloy.Second conductive semiconductor layer 110 can comprise the Group III-V compound semiconductor material selected from the group be made up of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP.N-shaped alloy can comprise Si, Ge, Sn, Se or Te.Second conductive semiconductor layer 110 can be prepared as individual layer or multilayer, but embodiment is not limited thereto.
To improve light extraction efficiency on the top surface that coarse or relief pattern 112 can be formed in the second conductive semiconductor layer 110.Can form coarse or relief pattern 112 randomly by wet etching or coarse or relief pattern 112, such as photon crystal structure can be formed regularly by patterning processes, but embodiment is not limited thereto.
Coarse or relief pattern 112 can have periodic pattern.Coarse recess patterns and raised design or relief pattern 112 by sphering or can be formed about its summit with the side surface of predetermined overturning angle.
Meanwhile, have and can be formed in below the first conductive semiconductor layer 130 with the semiconductor layer of the opposite polarity polarity of the first conductive semiconductor layer 130.If the first conductive semiconductor layer 130 is p-type semiconductor layer, so the second conductive semiconductor layer 110 is n-type semiconductor layer, and vice versa.Therefore, ray structure 145 can comprise at least one in N-P junction structure, P-N junction structure, N-P-N junction structure and P-N-P junction structure.
Second electrode 115 can be formed on ray structure.Second electrode 115 can have the pattern form be locally formed on ray structure 135.Although not shown in the accompanying drawings, the second electrode 115 can comprise with the electrode pad region of wire bond and from electrode pad region branch so that uniform current is expanded the current expansion pattern be provided in the whole region of ray structure.
When seeing in plan view, electrode pad region can have rectangle, circle, ellipse or polygonal shape, but embodiment is not limited thereto.
The second electrode can be prepared with single layer structure or sandwich construction by using at least one selection from the group be made up of Au, Ti, Ni, Cu, Al, Cr, Ag and Pt.In addition, the second electrode 115 can have and is in 1 μm to 10 μm, and preferably, 2 μm to the thickness (h) within the scope of 5 μm.
When the second electrode 115 has sandwich construction, the second electrode 115 can comprise: ohm layer (lowermost layer), and this ohm layer comprises the metal of such as Cr to form ohmic contact with ray structure 135; Reflector, this reflector to be formed on ohm layer and to comprise the metal of such as Al or Ag with high reflectance; First diffusion impervious layer, this first diffusion impervious layer to be formed on reflector and the metal comprised for inter-level diffusion such as Ni; Conductive layer, this conductive layer to be formed on the first diffusion impervious layer and to comprise the metal of the such as Cu with higher conductivity; And adhesion layer, this adhesion layer is formed in conductive layer and comprises the metal of such as Au or Ti with excellent adhesion property, but embodiment is not limited thereto.
In addition, electrode pad region 116a and current expansion pattern can have stacked structure mutually the same or different from each other.Such as because for wire bonding adhesion layer for current expansion pattern not necessarily, so can adhesion layer be omitted.In addition, current expansion pattern can comprise the material with transmissivity and electric conductivity.Such as, current expansion pattern can comprise at least one that select from the group be made up of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO and ZnO.
If coarse or jog 112 is formed on the top surface of ray structure 135, so can be formed on the top surface of the second electrode 115 with coarse or that jog 112 is corresponding coarse or jog.Due to the jog of the second electrode 115 or coarse, make reflecting member 190 firmly can couple the second electrode 115.
Coarse or the jog of the second electrode 115 can be formed by patterning processes.
Passivation layer 180 can be formed at least side of ray structure 135.In detail; one end 184 of passivation layer 180 is formed on the periphery of the top surface of the second conductive semiconductor layer 110, and the other end 182 of passivation layer 180 can by passing through or striding across the side of ray structure 135 and be formed on the top surface of protective layer 140.In other words, passivation layer 180 can by extending to the periphery of the top surface of the second conductive semiconductor layer 110 from the top surface of protective layer 140 through the first conductive semiconductor layer 130, active layer 120 and the second conductive semiconductor layer 110.
Passivation layer 180 can prevent from occurring electrical short between ray structure 135 and the conductive member of such as outer electrode.Such as, passivation layer 180 can comprise insulating material, and it comprises from by SiO 2, SiO x, SiO xn y, Si 3n 4, TiO 2and Al 2o 3one that selects in the group of composition, but embodiment is not limited thereto.
Hereinafter, the method for the manufacture luminescent device 100 according to embodiment will be described in detail.In the following description, in order to avoid repeating the detailed description that will omit or simplify element and the structure previously described.
Fig. 2 to Figure 11 is the sectional view of the method for the manufacture luminescent device illustrated according to embodiment.
With reference to figure 2, ray structure 135 is formed in growth substrates 101.
Growth substrates 101 can comprise from by Al 2o 3, SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge composition group in select at least one, but embodiment is not limited thereto.
Ray structure 135 can be formed by sequentially growing the second conductive semiconductor layer 110, active layer 120 and the first conductive semiconductor layer 130 in growth substrates.
Can form ray structure 135 by MOCVD (metal organic chemical vapor deposition), CVD (chemical vapour deposition (CVD)), PECVD (plasma enhanced chemical vapor deposition), MBE (molecular beam epitaxy) or HVPE (hydride gas-phase epitaxy), but embodiment is not limited thereto.
Resilient coating (not shown) or unadulterated semiconductor layer (not shown) can be formed between ray structure 135 and growth substrates 101 to reduce the lattice misfit between ray structure 135 and growth substrates 101.
Resilient coating can comprise InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN or InN, but embodiment is not limited thereto.
With reference to figure 3, protective layer 140 is formed in ray structure 135.In detail, protective layer 140 is formed in the borderline region place in the first conductive semiconductor layer 130 between the first chip area T1 and the second chip area T2.By scribing process, the first chip area T1 is separated with the second chip area T2 with forming unit luminescent device.Therefore, the first and second chip area T1 and T2 are defined as the region of wanting forming unit luminescent device.
Protective layer 140 can be formed in borderline region place between the first chip area T1 and the second chip area T2 by using mask pattern.Because Fig. 3 is two-dimensional section figure, so protective layer 140 is shown as on the borderline region that is only formed between the first chip area T1 and the second chip area T2.In fact, protective layer 140 is formed on all borderline regions of chip.Therefore, when seeing in plan view, protective layer 140 can have annular, loop shape or frame shape.By such as sputtering, the various deposition approach of electron beam evaporation plating or PECVD (plasma enhanced chemical vapor deposition) can form protective layer 140.
Protective layer 140 can comprise the metal material with excellent adhesion property.Such as, protective layer 140 can comprise at least one that select from the group be made up of Ti, Ni, Au, Ag, Ta, Pt, Pd, Rh, Ir and W.Therefore, protective layer 140 can be strengthened the adhesion strength between ray structure 135 and adhesion layer 170 and improve the reliability of luminescent device 100.
With reference to figure 4, current barrier layer 145 is formed in the first conductive semiconductor layer 130.Current barrier layer 145 can be formed by using mask pattern.Current barrier layer 145 is formed in the first conductive semiconductor layer 130 of overlapping second electrode 115 at least in part in vertical direction.
Current barrier layer 145 can comprise the material of the conductivity of the conductivity had lower than ohmic contact layer 150 and have electrical insulating property to form the material of Schottky contacts with the first conductive semiconductor layer 130.Such as, current barrier layer 145 can comprise from by ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2, SiO x, SiO xn y, Si 3n 4, Al 2o 3, TiO x, Ti, Al and Cr composition group in select at least one.
With reference to figure 5 and Fig. 6, on the top surface that ohmic contact layer 150 is formed in the first conductive semiconductor layer 130 and current barrier layer 145 and in the part and side of the top surface of protective layer 140, and reflector 160 is formed on ohmic contact layer 150.
Ohmic contact layer 150 optionally comprises transparent conductive material and metal.Such as, by use select from the group be made up of ITO (indium tin oxide), IZO (indium-zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminium tin-oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin-oxide), AZO (aluminium zinc oxide), ATO (antimony zinc oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx/ITO, Ni, Ag, Ni/IrOx/Au and Ni/IrOx/Au/ITO at least one, ohmic contact layer 150 can be prepared as individual layer or multilayer.
In addition, reflector 160 can comprise at least one that select from the group be made up of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.Reflector 160 can comprise the alloy of at least two of comprising in Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf, but embodiment is not limited thereto.Comprise by using the transparent conductive material of and above-mentioned metal selected from the group be made up of IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga-ZnO), IGZO (In-Ga-ZnO), IZTO (indium zinc tin oxide), IAZO (indium aluminium zinc oxide), IGTO (indium gallium tin-oxide) and ATO (aluminium tin-oxide), reflector 160 can be prepared as multilayer.
Ohmic contact layer and reflector 160 can be formed by electron beam evaporation plating, sputtering and PECVD.
With reference to figure 7, adhesion layer 170 is formed on reflector 160 and protective layer 140, and the first electrode 175 is formed on adhesion layer 170.
The end of adhesion layer 170 contact reflex layer 160, ohmic contact layer 150 and protective layer 140 are to add the adhesion strength between strongly reflecting layer 160, ohmic contact layer 150 and protective layer 140.
Adhesion layer 170 can comprise barrier metal or in conjunction with metal.Such as, adhesion layer 170 can comprise at least one that select from the group be made up of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta.
Such as, the first electrode 175 can comprise at least one that select from the group be made up of Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W and the carrier wafer that comprises Si, Ge, GaAs, ZnO, SiC or SiGe.
If by using identical material to form adhesion layer 170 and protective layer 140, so adhesion layer 170 can form with protective layer 140.In other words, protective layer 140 can stem from adhesion layer 170.
In further detail, after the first conductive semiconductor layer 130 is sequentially formed current barrier layer 145, ohmic contact layer 150 and reflector 160, adhesion layer 170 and protective layer 140 form.Under these circumstances, the efficiency of the manufacturing process for luminescent device 100 can be improved.
First electrode 175 can be prepared as the sheet being attached to adhesion layer 170.In addition, the first electrode 175 can be formed by depositing process or depositing operation, but embodiment is not limited thereto.
With reference to figure 7 and Fig. 8, after the luminescent device of flipchart 7, growth substrates 101 is removed.
Growth substrates 101 can be removed by least one in LLO, CLO (chemical stripping) and physical grinding.
According to LLO scheme, laser is irradiated to interface surface between growth substrates 101 and the second conductive semiconductor layer 110 to remove growth substrates 101 from the second conductive semiconductor layer 110.
According to CLO scheme, remove growth substrates 101 by wet etching and make it possible to exposure second conductive semiconductor layer 110.
According to physical grinding scheme, by physical grinding growth substrates 101, sequentially remove growth substrates 101 until expose the second conductive semiconductor layer 110 from its top surface.
Fragment or the protective layer 140 that can not produce protective layer 140 when performing laser lift-off can not be broken, thus can improve the reliability of the manufacturing process for luminescent device 100.
After removing growth substrates 101, cleaning procedure can be performed extraly to remove the residue of growth substrates 101 from the top surface of the second conductive semiconductor layer 110.Cleaning procedure can comprise the cineration technics or plasma surface treatment craft that use oxygen or nitrogen.
With reference to figure 9, perform isolation etching along the borderline region 105 between the first and second chip area T1 and T2, thus limit the unit chip area comprising ray structure 135.When performing isolation etching, the protective layer 140 at borderline region 105 place be formed between the first and second chip area T1 and T2 can be exposed.Unit chip area represents the region of forming unit luminescent device after the fracture process of such as scribing process.
Isolation etching can comprise the dry etching of such as inductively coupled plasma etching.
In addition, coarse or relief pattern 112 can be formed in the first conductive semiconductor layer 130 top surface on to improve light extraction efficiency.Can be formed regularly by using mask pattern or form coarse or relief pattern 112 randomly by wet etching, but embodiment be not limited thereto.
With reference to Figure 10, on the top surface that the second electrode 115 is formed in ray structure 135 and passivation layer 180 be formed at least one side of ray structure 135.
On the protective layer 140 at the borderline region place at least side that passivation layer 180 can be formed in ray structure 135 and between the first and second chip area T1 and T2.In detail; passivation layer 180 contacts the top surface of the protective layer 140 at the borderline region place between the first and second chip area T1 and T2, and by passing through or striding across the outer peripheral areas that the first conductive semiconductor layer 130, active layer 120 and the second conductive semiconductor layer 110 extend to the top surface of the second conductive semiconductor layer 110.
Passivation layer 180 can prevent from occurring electrical short between ray structure 135 and the first electrode 175.Such as, passivation layer 180 can comprise insulating material, and it comprises from by SiO 2, SiO x, SiO xn y, Si 3n 4, TiO2 and Al 2o 3one that selects in the group of composition, but embodiment is not limited thereto.
Passivation layer 180 can be formed by the depositing operation of such as electron beam evaporation plating, sputtering and PECVD.
In order to improve light extraction efficiency, coarse or jog 112 be can be formed on the top surface of the second conductive semiconductor layer 110 exposed by passivation layer 180.Being etched forming unit chip area or can form coarse or jog 112 after having formed passivation layer 180 by isolation, but embodiment is not limited thereto.
Coarse or jog 112 can be formed as mask execution dry etching or wet etching by using passivation layer 180.Because passivation layer 180 makes coarse or jog not be formed on the top surface of the second conductive semiconductor layer 110 below passivation layer 180.
Second electrode 115 can comprise with the electrode pad region 116a of wire bond and from electrode pad region 116a branch so that uniform current is provided to the current expansion pattern 116b in the whole region of ray structure 135.
When seeing in plan view, electrode pad region 116a can have rectangle, circle, ellipse or polygonal shape, but embodiment is not limited thereto.
By use select from the group be made up of Au, Ti, Ni, Cu, Al, Cr, Ag and Pt at least one, the second electrode 115 can be prepared as individual layer or multilayer.
The second electrode 115 can be formed by depositing process or depositing operation.
With reference to Figure 11, perform chip isolation technology to provide multiple independent chip by being separated with the second chip area by the first chip area T1, thus the luminescent device 100 according to embodiment is provided.
Chip isolation technology can comprise for by use blade apply physical force come separating chips chip fracture technique, for coming the laser scribe process of separating chips and the etch process of such as wet etching or dry etching by laser being irradiated to chip boundary region, but embodiment is not limited thereto.
Hereinafter, the second embodiment will be described.
Second embodiment is similar to the first embodiment, and difference is that protective layer 220 has sandwich construction.Therefore, in order to avoid repeating the details will omitting or simplify element and the structure previously described, and identical Reference numeral will be assigned to identical element.
Figure 12 is the side cross-sectional view of the luminescent device 100B according to the second embodiment.
Comprise the first electrode 175, the adhesion layer 170 on the first electrode 175, the reflector 160 on adhesion layer 170, the ohmic contact layer 150 on reflector 160, the protective layer 220 with sandwich construction in the outer peripheral areas of the top surface of adhesion layer 170 with reference to Figure 12, luminescent device 100B, be formed on ohmic contact layer 150 and protective layer 220 to produce the ray structure 135 of light and the second electrode 115 on ray structure 135.
The superiors of protective layer 220 and orlop can comprise first metal material with excellent adhesion property.Such as, protective layer 220 can comprise three layers or more multi-layered.Because the superiors of protective layer 220 and orlop comprise first metal material with excellent adhesion property, so ray structure 135 can be prevented from adhesion layer 170 layering.
Such as, protective layer 220 can comprise the first to third layer 212,214 and 216.Ground floor 212 and third layer 216 can comprise the first metal material, and it comprises at least one that select from the group be made up of Ti, Ni, Au, Ag, Ta, Pt, Pd, Rh, Ir and W.
By use select from the group be made up of insulating material, transparent conductive material and the second metal material at least one, the second layer 214 be disposed between first and third layer 212 and 216 can be prepared as individual layer or multilayer.
Such as, insulating material can comprise from by SiO 2, SiO x, SiO xn y, Si 3n 4, Al 2o 3and TiO xcomposition group in select at least one.
Transparent conductive material can comprise at least one that select from the group be made up of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO and ZnO.
Second metal material can comprise at least one that select from the group be made up of Ti, Al, W, Cu, Mo and Cr.
The second layer 214 can comprise by using Ni, Ni alloy, Ti or Ti alloy to be formed with the diffusion impervious layer preventing interior diffusion.
Figure 13 illustrates the sectional view comprising the light emitting device package of luminescent device according to embodiment.
With reference to Figure 13, light emitting device package 30 comprises main body 20, the first and second lead-in wire electrodes 31 and 32 be formed in main body 20, be arranged in main body 20 and be electrically connected to the luminescent device 100 of the first and second lead-in wire electrodes 31 and 32 and the shaped component 40 around luminescent device 100.
Main body 20 can comprise silicon, synthetic resin or metal material.When viewed in top view, main body 20 has the cavity 50 being formed with tilt internal wall 53.
First and second lead-in wire the mutual electric isolution of electrode 31 and 32 and pass through formed through main body 20.In detail, one end of the first and second lead-in wire electrodes 31 and 32 to be disposed in cavity 50 and the other ends in the first and second lead-in wire electrodes 31 and 32 are attached to the outer surface of main body 20 and are exposed to outside.
Electric power is supplied to luminescent device 100 by the first and second lead-in wire electrodes 31 and 32, and improves optical efficiency by the light that reflection is launched from luminescent device 1.In addition, the first and second lead-in wire electrodes 31 and 32 by the thermal transpiration that produces from luminescent device 100 to outside.
Luminescent device 100 can be installed in main body 20 or on the first or second lead-in wire electrode 31 or 32.
The wiring 171 and 181 of luminescent device 100 can be electrically connected to one in the first and second lead-in wire electrodes 31 and 32, but embodiment is not limited thereto.
Shaped component 40 around luminescent device 100 to protect luminescent device 100.In addition, shaped component 40 can comprise fluorophor to change the wavelength of the light launched from luminescent device 100.
Lighting unit can be applied to according to the luminescent device 100 of embodiment or light emitting device package 30.Lighting unit comprises multiple luminescent device or multiple light emitting device package.Lighting unit can comprise display unit as shown in figure 14 and figure 15 and the lighting device shown in Figure 16.In addition, lighting unit can comprise illuminating lamp, signal lamp, the head lamp of vehicle and electronic mark board.
Figure 14 is the decomposition diagram of the display unit illustrated according to embodiment.
With reference to Figure 14, display unit 1000 comprises light guide plate 1041; Light emitting module 1031, this light emitting module 1031 is for being supplied to light guide plate 1041 by light; Reflecting member 1022, this reflecting member 1022 is arranged on the below of light guide plate 1041; Optical sheet 1051, this optical sheet 1051 is arranged on above light guide plate 1041; Display floater 1061, this display floater 1061 is arranged on above optical sheet 1051; And bottom 1011, this bottom 1011 is for holding light guide plate 1041, light emitting module 1031 and reflecting member 1022.But embodiment is not limited to said structure.
Bottom 1011, reflector plate 1022, light guide plate 1041 and optical sheet 1051 can form lighting unit 1050.
Light guide plate 1041 spreads the light that provides from light emitting module 1031 to provide surface light.Light guide plate 1041 can comprise transmission material.Such as, light guide plate 1041 can comprise in the acrylic based resin of such as PMMA (polymethyl methacrylate), PET (polyethylene terephthalate), PC (Merlon), COC (cyclic olefin copolymer) and PEN (poly phthalate) resin.
At least side light being supplied to light guide plate 1041 is sentenced in the side that light emitting module 1031 is disposed in light guide plate 1041.Light emitting module 1031 is used as the light source of display unit.
There is provided at least one light emitting module 1031 to provide light from the side of light guide plate 1041 directly or indirectly.Light emitting module 1031 can comprise light emitting device package 30 according to embodiment and substrate 1033.Light emitting device package 30 is disposed on substrate 1033 and is spaced from each other at predetermined intervals simultaneously.Substrate 1033 can comprise printed circuit board (PCB) (PCB), but embodiment is not limited thereto.In addition, substrate 1033 can also comprise metal core PCB (MCPCB) or flexible PCB (FPCB), but embodiment is not limited thereto.If on the side that light emitting device package 30 is installed in bottom 1011 or on heating panel, so substrate 1033 can be omitted.Heating panel partly contacts the top surface of bottom 1011.Therefore, the heat produced from light emitting device package 30 can be transmitted into top cover 1011 by heating panel.
In addition, light emitting device package 30 is arranged to the light output surface of light emitting device package 30 and light guide plate 1041 separates predetermined distance, but embodiment is not limited thereto.Light can be supplied to the light incident surface of the side being light guide plate 1041 by light emitting device package 30 directly or indirectly, but embodiment is not limited thereto.
Reflecting member 1022 is disposed in the below of light guide plate 1041.The light that the basal surface that reflecting member 1022 is reflected through light guide plate 1041 towards display floater 1061 is advanced downwards, thus the brightness improving display floater 1061.Such as, reflecting member 1022 can comprise PET, PC or polyvinyl chloride resin, but embodiment is not limited thereto.Reflecting member 1022 can be used as the top surface of bottom 1011, but embodiment is not limited thereto.
Bottom 1011 can hold light guide plate 1041, light emitting module 1031 and reflecting member 1022 wherein.For this reason, bottom 1011 has holding portion 1012, and it has the box shaped of the top surface with opening, but embodiment is not limited thereto.Bottom 1011 can couple with top cover (not shown), but embodiment is not limited thereto.
Can by using metal material or resin material by pressing compression technology or expressing technique manufacture bottom 1011.In addition, bottom 1011 can comprise the metal or nonmetallic materials with excellent thermal conductivity, but embodiment is not limited thereto.
Such as, display floater 1061 is the LCD comprising the first and second transparency carriers respect to one another and be inserted in the liquid crystal layer between the first and second substrates.Polarization plates can be attached at least one surface of display floater 1061, but embodiment is not limited thereto.Display floater 1061 is by stopping the light that produces from light emitting module 1031 or allowing light from it through display information of coming.Display unit 1000 can be applied to various portable terminal, the monitor of notebook, the monitor of kneetop computer and TV.
Optical sheet 1051 to be disposed between display floater 1061 and light guide plate 1041 and to comprise at least one transmission sheet.Such as, optical sheet 1051 comprises at least one in diffusion sheet, horizontal and vertical prismatic lens and brightness enhancement sheet.Diffusion sheet diffusion into the light emitted, incident light concentrates on display floater 1061 by horizontal and vertical prismatic lens, and brightness enhancement sheet improves brightness by the light reusing loss.In addition, screening glass can be arranged on display floater 1061, but embodiment is not limited thereto.
Light guide plate 1041 and optical sheet 1051 can be arranged on as optical component in the light path of light emitting module 1031, but embodiment is not limited thereto.
Figure 15 is the sectional view of the display unit illustrated according to embodiment.
With reference to Figure 15, display unit 1100 comprises bottom 1152, it is arranged the substrate 1120 of light emitting device package 30, optical component 1154 and display floater 1155.
Substrate 1120 and light emitting device package 30 can form light emitting module 1060.In addition, bottom 1152, at least one module 1060 and optical component 1154 can form lighting unit (not shown).
Bottom 1151 can be equipped with holding portion 1153, but embodiment is not limited thereto.
Optical component 1154 can comprise at least one that select from the group be made up of lens, light guide plate, diffusion sheet, horizontal and vertical prismatic lens and brightness enhancement sheet.Light guide plate can comprise PC or PMMA (methyl methacrylate).Light guide plate can be omitted.Diffusion sheet diffusion into the light emitted, incident light concentrates on display floater 1155 by horizontal and vertical prismatic lens, and brightness enhancement sheet improves brightness by the light reusing loss.
Optical component 1154 is disposed in the top of light emitting module 1060 so that the light launched from light emitting module 1060 is converted to surface light.In addition, optical component 1154 can spread or collect light.
Figure 16 is the perspective view of the lighting device illustrated according to embodiment.
With reference to Figure 16, lighting device 1500 comprises shell 1510; Light emitting module 1530, this light emitting module 1530 is installed in shell 1510; And splicing ear 1520, this splicing ear 1520 is installed in shell 1510 to receive electric power from external power source.
Preferably, shell 1510 comprises the material with excellent heat dispersion.Such as, shell 1510 comprises metal material or resin material.
The light emitting device package 30 that light emitting module 1530 can comprise substrate 1532 and be arranged on substrate 1532.Light emitting device package 30 is spaced from each other or arranges with a matrix type.
Substrate 1532 comprises the insulating component being printed on circuit pattern.Such as, substrate 1532 comprises PCB, MCPCB, flexible PCB, ceramic PCB and FR-4 substrate.
In addition, substrate 1532 can comprise the material of reverberation effectively.Coating can be formed on the surface of substrate 1532.At this moment, coating has white or the silver color of reverberation effectively.
At least one light emitting device package 30 is installed on substrate 1532.Each light emitting device package 30 can comprise at least one LED (light-emitting diode) chip.LED chip can comprise the LED launching and have the visible ray of red, green, blue or white, and launches UV (ultraviolet) LED of UV light.
The light emitting device package 30 of light emitting module 1530 can differently combine to provide shades of colour and brightness.Such as, White LED, red LED and green LED can be combined to realize high color rendering index (CRI) (CRI).
Splicing ear 1520 is electrically connected to light emitting module 1530 so that electric power is supplied to light emitting module 1530.Splicing ear 1520 has the shape with external power receptacle screw thread couple, but embodiment is not limited thereto.Such as, can splicing ear 1520 be prepared with the form of the plug being inserted into external power source or by wiring, splicing ear 1520 is connected to external power source.
Meanwhile, the method manufacturing luminescent device comprises the steps: to form ray structure; Chip boundary region between the chip limiting unit ray structure is formed the protective layer comprising metal material; Protective layer and ray structure are formed the first electrode comprising the supporting member with conductivity; And second electrode relative with the first electrode is formed on ray structure.
According to embodiment, protective layer comprises the metal material with excellent adhesion property, makes it possible to strengthen the adhesion property between ray structure and adhesion layer.Therefore, ray structure can not with adhesion layer layering, thus the reliability of luminescent device can be improved.
In this manual quoting of " embodiment ", " embodiment ", " exemplary embodiment " etc. is meaned that special characteristic, structure or the characteristic in conjunction with the embodiments described is included at least one embodiment of the present invention.In the description, this kind of phrase occurred throughout need not all represent identical embodiment.In addition, when describing special characteristic, structure or characteristic in conjunction with any embodiment, it is also that those skilled in the art can expect that other embodiment all thinking in conjunction with the embodiments realizes such feature, structure or characteristic.
Although describe embodiment with reference to multiple exemplary embodiment of the present invention, should be appreciated that, those skilled in the art can expect multiple other amendment and embodiment, and this will fall in spirit and scope.More specifically, the main contents in the scope of this specification, accompanying drawing and claims combine in the building block and/or layout arranged, variations and modifications are all possible.Except building block and/or the change in arranging and amendment, for a person skilled in the art, alternative use also will be apparent.
Accompanying drawing explanation
Fig. 1 is the side cross-sectional view of the luminescent device illustrated according to the first embodiment;
Fig. 2 to Figure 11 is the sectional view of the method for the manufacture luminescent device illustrated according to embodiment;
Figure 12 is the side cross-sectional view of the luminescent device illustrated according to the second embodiment;
Figure 13 illustrates the sectional view comprising the light emitting device package of luminescent device according to embodiment;
Figure 14 is the decomposition diagram of the display unit according to embodiment;
Figure 15 is the sectional view of the display unit illustrated according to embodiment; And
Figure 16 is the perspective view of the lighting device illustrated according to embodiment.

Claims (18)

1. a luminescent device, comprising:
Ray structure, described ray structure comprises the first semiconductor layer, active layer and the second semiconductor layer;
The first electrode on described ray structure;
The outer peripheral areas of one in described ray structure and described first electrode comprises the protective layer of the first metal material, and described protective layer comprises at least two-layer or more layer; And
Passivation layer, described passivation layer is arranged on going up at least partially of described ray structure,
Wherein, described protective layer comprises metal level,
Described ray structure comprises coarse or relief pattern, and
Wherein, described first semiconductor layer of described metal level contact.
2. luminescent device according to claim 1, every layer in wherein said at least two-layer or more layer comprises at least one that select from the group be made up of Ti, Ni, Au, Ag, Ta, Pt, Pd, Rh, Ir and W.
3. a luminescent device, comprising:
Ray structure, described ray structure comprises the first semiconductor layer, active layer and the second semiconductor layer;
The first electrode on described ray structure; And
The outer peripheral areas of one in described ray structure and described first electrode comprises the protective layer of the first metal material,
The orlop of wherein said protective layer and the superiors comprise described first metal material, and
Described first semiconductor layer of the superiors' contact of wherein said protective layer.
4. luminescent device according to claim 3, wherein said first metal material comprises at least one that select from the group be made up of Ti, Ni, Au, Ag, Ta, Pt, Pd, Rh, Ir and W.
5. luminescent device according to claim 3, is included in the intermediate layer between the described the superiors and orlop further,
Wherein said intermediate layer comprises at least one that select from the group be made up of insulating material, electric conducting material and the second metal material.
6. luminescent device according to claim 5, wherein said insulating material comprises from by SiO x, SiO xn y, Si 3n 4, Al 2o 3and TiO xcomposition group in select at least one.
7. luminescent device according to claim 5, wherein said electric conducting material comprises at least one that select from the group be made up of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO and ZnO.
8. luminescent device according to claim 5, wherein said second metal material comprises at least one that select from the group be made up of Ti, Al, W, Cu, Mo and Cr.
9. the luminescent device according to any one of claim 5-8, one in the intermediate layer wherein between the described the superiors and orlop comprises diffusion impervious layer.
10. luminescent device according to claim 9, wherein said diffusion impervious layer comprises at least one that select from the group by Ni, Ti, Ni alloy and Ti alloy composition.
11. luminescent devices according to any one of claim 3-8, be included in further between described first electrode and described ray structure select from the group be made up of adhesion layer, reflector, ohmic contact layer and current barrier layer at least one.
12. luminescent devices according to claim 11, wherein said orlop contacts described adhesion layer.
13. luminescent devices according to claim 11, wherein said protective layer is arranged on described adhesion layer.
14. 1 kinds of luminescent devices, comprising:
Ray structure, described ray structure comprises the first semiconductor layer, active layer and the second semiconductor layer;
The first electrode on described ray structure; And
The outer peripheral areas of one in described ray structure and described first electrode comprises the protective layer of the first metal material;
Adhesion layer on the first electrode; And
Reflector between described adhesion layer and described ray structure,
Wherein said protective layer comprises the superiors, and the described the superiors contact with described first semiconductor layer, and
The superiors of wherein said protective layer comprise described first metal material.
15. luminescent devices according to claim 14, wherein said first metal material comprises at least one that select from the group be made up of Ti, Ni, Au, Ag, Ta, Pt, Pd, Rh, Ir and W.
16. luminescent devices according to any one of claim 14-15, the orlop of wherein said protective layer comprises described first metal material.
17. luminescent devices according to claim 16, are included in the intermediate layer between the described the superiors and orlop further,
Wherein said intermediate layer comprises at least one that select from the group be made up of insulating material, electric conducting material and the second metal material.
18. luminescent devices according to claim 17, one in wherein said intermediate layer comprises diffusion impervious layer.
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