CN110047984A - Micro LED component and display panel - Google Patents
Micro LED component and display panel Download PDFInfo
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- CN110047984A CN110047984A CN201910282907.4A CN201910282907A CN110047984A CN 110047984 A CN110047984 A CN 110047984A CN 201910282907 A CN201910282907 A CN 201910282907A CN 110047984 A CN110047984 A CN 110047984A
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- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 230000005611 electricity Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 claims description 2
- 238000005215 recombination Methods 0.000 abstract description 10
- 230000006798 recombination Effects 0.000 abstract description 10
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000003447 ipsilateral effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Power Engineering (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of Micro LED component and display panel.The Micro LED component includes: N-type layer, and the substrate surface for being deposited with buffer layer is arranged in the N-type layer, and the N-type layer surface is covered with active layer；P-type layer, the P-type layer surface are provided with transparency conducting layer, and the P-type layer covers the active layer；The each edge of the transparency conducting layer is provided with pre-determined distance between boundary corresponding with the P-type layer, to increase the current density in the Micro LED component.Micro LED component and display panel of the invention is by current convergence in the central area of device, increase current density, and the leakage current of Micro LED component edge region, non-radiative recombination phenomenon can be reduced, to improve the luminous efficiency of Micro LED component and display panel.
Description
Technical field
The present invention relates to photoelectron technical field more particularly to a kind of Micro LED component and display panels.
Background technique
Micro- LED displays (Micro LED Display) are the display technology of a new generation, and Micro LED is inherited
The characteristic of LED, has that size is small, light-weight, brightness is high, the service life is long, low in energy consumption, response time is fast and that controllability is strong is excellent
Point, and the colour gamut of Micro LED can reach 1500 greater than 120%, PPI (pixel density).
The size of usual Micro LED component can be also easy to produce leakage current, side dangling bonds meeting in side at this time less than 50 μm
Lead to non-radiative recombination, electric current congestion effect and fuel factor die down, and can seriously affect the luminous efficiency of Micro LED component.
Accordingly, it is desirable to provide a kind of new Micro LED component, to solve the above problems.
Summary of the invention
The present invention provides a kind of Micro LED component, by the design to transparency conducting layer, electric current is avoided to pass through close to side
The region of wall is asked with solving existing Micro LED component due to size is small in side generation leakage current, non-radiative recombination etc.
Topic, and then influence the technical issues of showing.
To solve the above problems, technical solution provided by the invention is as follows:
The present invention provides a kind of Micro LED component, comprising:
The substrate surface for being deposited with buffer layer is arranged in N-type layer, the N-type layer, and the N-type layer surface is covered with active
Layer；
P-type layer, the P-type layer surface are provided with transparency conducting layer, and the P-type layer covers the active layer；
The each edge of the transparency conducting layer is provided with pre-determined distance between boundary corresponding with the P-type layer, to increase
Current density in the Micro LED component.
According to one preferred embodiment of the present invention, the pre-determined distance is greater than 2-5 μm, to increase the Micro LED component
In current density.
According to one preferred embodiment of the present invention, between each edge of the transparency conducting layer and the boundary of the P-type layer
Pre-determined distance is identical, and the central point of the transparency conducting layer and the central point of the P-type layer overlap.
According to one preferred embodiment of the present invention, between each edge of the transparency conducting layer and the boundary of the P-type layer
Pre-determined distance is not quite similar, and the central point of the transparency conducting layer deviates the central point of the P-type layer.
According to one preferred embodiment of the present invention, the P-type layer is divided into five regions, and five regions are not overlapped mutually,
The central point of the P-type layer between each vertex of the P-type layer according to apart from equal part there are four Along ent, including multiple the
One Along ent, multiple second Along ents, multiple third Along ents and multiple quartering points；
Wherein, first Along ent is adjacent to the central point of the P-type layer, and the quartering point is adjacent to the P-type layer
Corresponding vertex；
First Along ent connects to form first area, and second Along ent connects to form second area, and described
Trisection point connects to form third region；
The transparency conducting layer at least covers the first area, the second area and the third region.
According to one preferred embodiment of the present invention, the Micro LED component further includes having metal electrode；
Wherein, the transparency conducting layer is connected with the first metal electrode, and first metal electrode is also connected with driving electricity
Road.
According to one preferred embodiment of the present invention, the Micro LED component uses horizontal structure, the area of the N-type layer
Greater than the area of the P-type layer, the N-type layer is connected with the second metal electrode far from the side of the transparency conducting layer.
According to one preferred embodiment of the present invention, the Micro LED component uses vertical structure, and the N-type layer is connected with
Second metal electrode, second metal electrode are oppositely arranged with first metal electrode.
According to one preferred embodiment of the present invention, the electric current in the Micro LED component is from the first metal electrode stream
To second metal electrode, and concentrate on the Micro LED component with the first area, the second area, institute
The corresponding region in third region is stated, to increase current density.
Above-mentioned purpose according to the present invention proposes a kind of display panel, includes array substrate and is distributed in the battle array
Micro LED component on column substrate, the Micro LED component are above-described Micro LED component.
The invention has the benefit that compared to existing Micro LED component and display panel, Micro of the invention
LED component and display panel are by being patterned design to transparency conducting layer, in each edge and P-type layer pair of transparency conducting layer
Pre-determined distance is set between the boundary answered, and transparency conducting layer connects metal electrode, and current convergence is not leaned in the central area of chip
Proximal edge part, increases current density, improves the luminous efficiency of chip；Solve existing Micro LED component and display
Panel due to size becomes smaller edge occur leakage current, non-radiative recombination phenomena such as, to keep the luminous efficiency of chip significant
The technical issues of decline.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of existing Micro LED component；
Fig. 2 is the structural schematic diagram of Micro LED component of the invention；
Fig. 3 a is a kind of cross section structure schematic diagram of Micro LED component of the invention；
Fig. 3 b is a kind of overlooking structure diagram of Micro LED component of the invention；
Fig. 4 a is the cross section structure schematic diagram of another Micro LED component of the invention；
Fig. 4 b is the overlooking structure diagram of another Micro LED component of the invention.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention is directed to existing Micro LED component since size becomes smaller, and apparent edge effect occurs in side wall,
The technical issues of such as generating leakage current, leading to phenomena such as non-radiative recombination, seriously affect the luminous efficiency of chip, the present embodiment energy
Enough solve the defect.
As shown in Figure 1, Fig. 1 is the structural schematic diagram of existing Micro LED component, usually deposited on substrate 101
Entire LED structure, including buffer layer 102, N-type layer 103, active layer 104 and P-type layer 105.
In general, that P-type layer 105 and N-type layer 103 is GaN, and the carrier concentration of p-GaN is about 1E17-
5E17cm-3, it is much smaller than n-GaN carrier concentration (> 1E18cm-3).Therefore the conductive capability of p-GaN layer is poor, needs in p-
Layer of transparent conductive layer 106 is deposited on GaN.This layer is usually the material of the transparent high conductives such as ITO or AlZnO (AZO), tool
There is satisfactory electrical conductivity.
But since Micro LED component has wall effect at edge, passes through electrode in electric current and transparency conducting layer 106 will
When Micro LED component is connected, it is easy to generate leakage current in boundary, and also have non-radiative recombination, pole at edge
The luminous efficiency of big reduction Micro LED component.
As shown in Fig. 2, Micro LED component of the invention includes: substrate 201；201 disposed thereon of substrate has slow
Rush layer 202；N-type layer 203, active layer 204, P-type layer 205 and transparency conducting layer have been sequentially depositing above the buffer layer 202
206。
Optionally, the buffer layer 202 can be U-GaN, that is, undoped with GaN, be before preparing LED structure,
Buffering/the basal layer grown to improve GaN material crystal quality；The active layer 204 can be multiple quantum wells, be in order to
The hole of P-type material and the electronics of n type material are limited, their luminous efficiency is enable to have greatly improved.
It is GaN that P-type material and n type material of the invention, which does not limit, be also possible to InGaN, GaAs/GaAsInP,
The materials such as AlInGaAs.
The transparency conducting layer 206 includes multiple summits, each edge of the transparency conducting layer 206 and the P-type layer 205
Pre-determined distance 207 is provided between corresponding boundary, the pre-determined distance 207 is at 2-5 μm or more, this is because the Micro
The luminous efficiency in 2-5 μm of the edge region of LED component is poor.
The shape of the transparency conducting layer 206 is not limited to rectangle or quadrangle, can be other figures such as hexagon, tool
Body is changed with the shape of the Micro LED component.
The transparency conducting layer 206 includes multiple summits, and the described of boundary of each edge apart from the P-type layer 205 is preset
For distance 207 at 2-5 μm or more, each edge can be identical with the pre-determined distance 207 on the boundary of the P-type layer 205, can also be with
It is not quite similar；When each edge of the transparency conducting layer 206 is identical as the pre-determined distance 207 on boundary of the P-type layer 205
When, the central point of the transparency conducting layer 206 is overlapped with the central point of the P-type layer 205；When the transparency conducting layer 206
When the pre-determined distance 207 between each edge and the boundary of the P-type layer 205 is not identical, in the transparency conducting layer 206
Heart point deviates the central point of the P-type layer 205.
The size dimension of the Micro LED component is not quite similar, when the Micro LED component is 50*50 μm of size
When, the pre-determined distance 207 between the side of the transparency conducting layer 206 and the boundary of the P-type layer 205 is greater than 5 μm；Work as institute
State Micro LED component be 10*10 μm of size when, between the side of the transparency conducting layer 206 and the boundary of the P-type layer 205
The pre-determined distance 207 be greater than 2 μm；The most short institute on the boundary on the side and P-type layer 205 of the i.e. described transparency conducting layer 206
The size decision that pre-determined distance 207 regards the Micro LED component is stated, the transparency conducting layer 206 should at least cover the p-type
The central area of layer 205, makes current convergence in the vertical direction region of the transparency conducting layer 206, is avoided that current expansion arrives
The boundary of the Micro LED component, and the problems such as generate non-radiative recombination, leakage current.
For example, the transparency conducting layer 206 should at least cover the central area of the P-type layer 205 concretely: will be described
P-type layer 205 is divided for five regions, and five regions are not overlapped mutually, the central point of the P-type layer 205 to the P-type layer
Between 205 each vertex according to apart from equal part there are four Along ent, including multiple first Along ents, multiple second Along ents,
Multiple third Along ents and multiple quartering points；Wherein, first Along ent adjacent to the P-type layer 205 central point,
The quartering point is adjacent to the corresponding vertex of the P-type layer 205；First Along ent connects to form first area, described
Second Along ent connects to form second area, and the third Along ent connects to form third region；The transparency conducting layer 206 to
The first area, the second area and the third region are covered less.
As shown in Fig. 3 a, 3b, the Micro LED component uses horizontal structure, and the Micro LED component further includes having
Metal electrode, in this structure, the transparency conducting layer 306 is connected with the first metal electrode 308a, first metal electrode
In addition 308a is also connected with external drive circuit, the area of the N-type layer 303 is greater than the area of the P-type layer 305, in the N
Type layer 303 is connected with the second metal electrode 308b far from the side of the transparency conducting layer 306.
The first metal electrode 308a and the ipsilateral setting of the second metal electrode 308b, electric current is by first metal
Electrode 308a flows to the second metal electrode 308b.
Pre-determined distance is provided between each edge of the transparency conducting layer 306 and the corresponding boundary of the P-type layer 305
307, the pre-determined distance 307 between the boundary of the transparency conducting layer 306 and the boundary of the P-type layer 305 is greater than 2-5 μm, electricity
It flows and is extended in the vertical direction region of the transparency conducting layer 306, and circulate in the central area of the Micro LED component,
The P-type layer 305, the active layer 304, the N-type layer 303 are flowed through, electric current avoids the side by the Micro LED component
Edge region, phenomena such as to prevent non-radiative recombination, leakage current, to improve the luminous efficiency of the Micro LED component.
The transparency conducting layer 306 includes multiple summits, and the described of boundary of each edge apart from the P-type layer 305 is preset
For distance 307 at 2-5 μm or more, each edge can be identical with the pre-determined distance 307 on the boundary of the P-type layer 305, can also be with
It is not quite similar；When each edge of the transparency conducting layer 306 is identical as the pre-determined distance 307 on boundary of the P-type layer 305
When, the central point of the transparency conducting layer 306 is overlapped with the central point of the P-type layer 305；When the transparency conducting layer 306
When the pre-determined distance 307 between each edge and the boundary of the P-type layer 305 is not identical, in the transparency conducting layer 306
Heart point deviates the central point of the P-type layer 305.
As shown in Fig. 4 a, 4b, the Micro LED component uses vertical structure, and the Micro LED component further includes having
Metal electrode, in this structure, the transparency conducting layer 406 is connected with the first metal electrode 408a, first metal electrode
In addition 408a is also connected with external drive circuit, the N-type layer 403 is connected with the second metal electrode 408b, first metal
Electrode 408a is oppositely arranged with the second metal electrode 408b, and the electric current in the Micro LED component is by first gold medal
Belong to electrode 408a and flows to the second metal electrode 408b.
Pre-determined distance is provided between each edge of the transparency conducting layer 406 and the corresponding boundary of the P-type layer 405
407, the pre-determined distance 407 between the boundary of the transparency conducting layer 406 and the boundary of the P-type layer 405 is greater than 2-5 μm, electricity
It flows and is extended in the vertical direction region of the transparency conducting layer 406, and circulate in the central area of the Micro LED component,
The P-type layer 405, the active layer 404, the N-type layer 403 are flowed through, electric current avoids the side by the Micro LED component
Edge region, phenomena such as to prevent non-radiative recombination, leakage current, to improve the luminous efficiency of the Micro LED component.
The transparency conducting layer 406 includes multiple summits, and the described of boundary of each edge apart from the P-type layer 405 is preset
For distance 407 at 2-5 μm or more, each edge can be identical with the pre-determined distance 407 on the boundary of the P-type layer 405, can also be with
It is not quite similar；When each edge of the transparency conducting layer 406 is identical as the pre-determined distance 407 on boundary of the P-type layer 405
When, the central point of the transparency conducting layer 406 is overlapped with the central point of the P-type layer 405；When the transparency conducting layer 406
When the pre-determined distance 407 between each edge and the boundary of the P-type layer 405 is not identical, in the transparency conducting layer 406
Heart point deviates the central point of the P-type layer 405.
In Micro LED component of the invention, first metal electrode and second metal electrode can be identical,
Can not also be identical, the material of the metal electrode can be NiAu, CrPaAu, TiAlNiAu etc.；The metal electrode it is big
Small not limit to, when light source is at the transparency conducting layer side, first metal electrode is less than the transparency conducting layer, to prevent
Only the first metal electrode shading, influence luminous efficiency；When light source is not at the transparency conducting layer side, first gold medal
The size of category electrode with no restrictions, can be bigger than the transparency conducting layer, can also be smaller than the transparency conducting layer.
Wherein the metal electrode can be NiAu or other conductive metals, the transparency conducting layer can be ITO,
AlZnO or other materials.
Micro LED component of the present invention can be the Micro LED component of any one color, right in the present invention
This is without limitation.
The Micro LED component of the invention is transferred in array substrate by branch mode, mode without limitation,
It can be formal dress, be also possible to the modes such as upside-down mounting.
Micro LED component of the working principle of the display panel of the preferred embodiment of the present invention with above preferred embodiment
Working principle it is consistent, specifically refer to the working principle of the Micro LED component of above preferred embodiment, no longer do herein superfluous
It states.
The invention has the benefit that compared to existing Micro LED component and display panel, Micro of the invention
LED component and display panel are by being patterned design to transparency conducting layer, in each edge and P-type layer pair of transparency conducting layer
Pre-determined distance is set between the boundary answered, and transparency conducting layer connects metal electrode, and current convergence is not leaned in the central area of chip
Proximal edge part, increases current density, improves the luminous efficiency of chip；Solve existing Micro LED component and array
Substrate due to size becomes smaller edge occur leakage current, non-radiative recombination phenomena such as, to keep the luminous efficiency of chip significant
The technical issues of decline.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of Micro LED component characterized by comprising
The substrate surface for being deposited with buffer layer is arranged in N-type layer, the N-type layer, and the N-type layer surface is covered with active layer；
P-type layer, the P-type layer surface are provided with transparency conducting layer, and the P-type layer covers the active layer；
The each edge of the transparency conducting layer is provided with pre-determined distance between boundary corresponding with the P-type layer, described in increasing
Current density in Micro LED component.
2. Micro LED component according to claim 1, which is characterized in that the pre-determined distance is greater than 2-5 μm, to increase
Current density in the big Micro LED component.
3. Micro LED component according to claim 2, which is characterized in that each edge of the transparency conducting layer and institute
The pre-determined distance stated between the boundary of P-type layer is identical, the central point of the central point of the transparency conducting layer and the P-type layer
It overlaps.
4. Micro LED component according to claim 2, which is characterized in that each edge of the transparency conducting layer and institute
The pre-determined distance stated between the boundary of P-type layer is not quite similar, and the central point of the transparency conducting layer deviates the P-type layer
Central point.
5. Micro LED component according to claim 3 or 4, which is characterized in that the P-type layer is divided into five regions, institute
It states five regions not to be overlapped mutually, the central point of the P-type layer has between each vertex of the P-type layer according to apart from equal part
Four Along ents, including multiple first Along ents, multiple second Along ents, multiple third Along ents and multiple quarterings
Point；
Wherein, first Along ent is adjacent to the central point of the P-type layer, and the quartering point is adjacent to P-type layer correspondence
Vertex；
First Along ent connects to form first area, and second Along ent connects to form second area, described third etc.
Branch connects to form third region；
The transparency conducting layer at least covers the first area, the second area and the third region.
6. Micro LED component according to claim 5, which is characterized in that the Micro LED component further includes having gold
Belong to electrode；
Wherein, the transparency conducting layer is connected with the first metal electrode, and first metal electrode is also connected with driving circuit.
7. Micro LED component according to claim 6, which is characterized in that the Micro LED component uses horizontal junction
Structure, the area of the N-type layer are greater than the area of the P-type layer, and the N-type layer is connected with far from the side of the transparency conducting layer
Second metal electrode.
8. Micro LED component according to claim 6, which is characterized in that the Micro LED component uses vertical junction
Structure, the N-type layer are connected with the second metal electrode, and second metal electrode is oppositely arranged with first metal electrode.
9. Micro LED component according to claim 7 or 8, which is characterized in that the electricity in the Micro LED component
Stream from first metal electrode flows to second metal electrode, and concentrate on the Micro LED component with described the
One region, the second area, the corresponding region in the third region, to increase current density.
It include array substrate and the Micro LED component being distributed in the array substrate 10. a kind of display panel,
It is characterized in that, the Micro LED component is any Micro LED component of claim 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910282907.4A CN110047984A (en) | 2019-04-10 | 2019-04-10 | Micro LED component and display panel |
| PCT/CN2019/087461 WO2020206812A1 (en) | 2019-04-10 | 2019-05-17 | Micro led device and display panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910282907.4A CN110047984A (en) | 2019-04-10 | 2019-04-10 | Micro LED component and display panel |
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| WO (1) | WO2020206812A1 (en) |
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| CN111446335A (en) * | 2020-03-24 | 2020-07-24 | 京东方科技集团股份有限公司 | Light emitting diode and preparation method thereof |
| CN112071260A (en) * | 2020-09-22 | 2020-12-11 | 禹创半导体(深圳)有限公司 | Micro LED light-emitting drive circuit and drive method |
| CN112397626A (en) * | 2019-08-16 | 2021-02-23 | 深圳第三代半导体研究院 | Light-emitting diode |
| CN111564536B (en) * | 2020-05-12 | 2021-11-05 | 创维液晶器件(深圳)有限公司 | Preparation method and structure of Micro-LED chip and display terminal |
| WO2022052560A1 (en) * | 2020-09-11 | 2022-03-17 | 成都辰显光电有限公司 | Micro-light emitting diode chip, preparation method therefor, and display panel |
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